CN116469907A - Light-emitting panel and manufacturing method thereof - Google Patents

Light-emitting panel and manufacturing method thereof Download PDF

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Publication number
CN116469907A
CN116469907A CN202310734148.7A CN202310734148A CN116469907A CN 116469907 A CN116469907 A CN 116469907A CN 202310734148 A CN202310734148 A CN 202310734148A CN 116469907 A CN116469907 A CN 116469907A
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light
epitaxial layer
wedge
electrode
emitting
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CN116469907B (en
Inventor
陈良键
张羽
岳大川
蔡世星
林立
李小磊
伍德民
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Shenzhen Aoshi Micro Technology Co Ltd
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Shenzhen Aoshi Micro Technology Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/24—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/387—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating

Abstract

The disclosure relates to the technical field of display, in particular to a light-emitting panel and a manufacturing method thereof, which can release stress of a GaN epitaxial layer, reduce warpage of the epitaxial layer and improve light-emitting efficiency. The light-emitting panel comprises a substrate, an N-type GaN epitaxial layer, a light-emitting epitaxial layer, a first wedge-shaped structure, a second wedge-shaped structure, a P electrode and an N electrode; the N-type GaN epitaxial layer and the light-emitting epitaxial layer are formed on the substrate, the first wedge-shaped structure penetrates through the light-emitting epitaxial layer and the N-type GaN epitaxial layer, and the second wedge-shaped structure penetrates through the light-emitting epitaxial layer and part of the N-type GaN epitaxial layer; the P electrode is positioned on the light-emitting epitaxial layer, and the N electrode covers the first wedge-shaped structure and the second wedge-shaped structure.

Description

Light-emitting panel and manufacturing method thereof
Technical Field
The disclosure relates to the technical field of display, in particular to a light-emitting panel and a manufacturing method thereof.
Background
As Micro projectors and wearable devices are increasingly being put into real production and life, micro light emitting diodes (Micro Light Emitting Diode, micro-LEDs), and organic light emitting diodes (Organic Micro Light Emitting Diode, OLED) are becoming more and more widely used in the field of display technology.
As a novel semiconductor light-emitting device, the GaN-based LED chip has the advantages of small volume, high brightness, long service life, environmental protection and the like. At present, a GaN epitaxial layer in an LED chip mainly grows epitaxially on a heterogeneous substrate, then a cathode and an anode are LED out from the epitaxial wafer by utilizing processes such as semiconductor photoetching and the like, and the cathode and the anode are interconnected with a driving chip, so that independent display luminescence is realized.
In the prior art, due to the fact that the lattice adaptation degree and the thermal expansion coefficient of the GaN epitaxial layer and the heterogeneous substrate material are different, the GaN epitaxial layer in the LED device can be subjected to tensile stress or compressive stress to different degrees, and the epitaxial wafer is subjected to visible or invisible cracks, wafer bending and other phenomena. Fragments are easily generated in the subsequent photolithography, CMP (chemical mechanical polishing ) and thinning processes. The existing LED stress relief technology mainly comprises the steps of adding a buffer layer between a substrate and a GaN epitaxial layer, or using a patterned substrate and the like. Although the two methods can play roles in eliminating partial stress and improving the epitaxial quality, larger residual stress still exists in the GaN epitaxial layer, so that the display panel is easy to warp, and the luminous efficiency of the LED device is limited.
Disclosure of Invention
In order to solve the above technical problems or at least partially solve the above technical problems, the present disclosure provides a light emitting panel and a manufacturing method thereof, which can release stress of a GaN epitaxial layer, reduce warpage of the epitaxial layer, and improve light emitting efficiency.
In a first aspect, embodiments of the present disclosure provide a light emitting panel including a substrate, an N-type GaN epitaxial layer, a light emitting epitaxial layer, a first wedge structure, a second wedge structure, a P electrode, and an N electrode;
the N-type GaN epitaxial layer and the light-emitting epitaxial layer are formed on the substrate, the first wedge-shaped structure penetrates through the light-emitting epitaxial layer and the N-type GaN epitaxial layer, and the second wedge-shaped structure penetrates through the light-emitting epitaxial layer and part of the N-type GaN epitaxial layer;
the P electrode is positioned on the light-emitting epitaxial layer, and the N electrode covers the first wedge-shaped structure and the second wedge-shaped structure.
In some embodiments, further comprising a first stress transfer layer and a second stress transfer layer;
the first stress transfer layer is arranged on the N electrode;
the second stress transfer layer is arranged on the light-emitting epitaxial layer, a P electrode through hole is formed in the second stress transfer layer, and the P electrode is formed in the P electrode through hole.
In some embodiments, the first stress-transmitting layer has a hardness greater than the light-emitting epitaxial layer and the second stress-transmitting layer has a hardness less than the P-electrode and the light-emitting epitaxial layer.
In some embodiments, the first wedge structure is an insulating material and the second wedge structure is a metal.
In some embodiments, the first wedge structure is Al 2 O 3 Or BeO, and the second wedge-shaped structure is Cu or Au.
In some embodiments, the total thickness of the light emitting epitaxial layer and the N-type GaN epitaxial layer is 3-4 μm, the height of the first wedge-shaped structure is 3.6-4.6 μm, and the height of the second wedge-shaped structure is 2.1-3.1 μm.
In a second aspect, an embodiment of the present disclosure further provides a method for manufacturing a light emitting panel, including:
sequentially forming an N-type GaN epitaxial layer, a luminous epitaxial layer and a protective layer on a substrate;
forming a first wedge-shaped groove penetrating through the protective layer, the light-emitting epitaxial layer and the N-type GaN epitaxial layer by utilizing a photoetching process;
depositing a first filling material and etching the first filling material to form a first wedge-shaped structure positioned in the first wedge-shaped groove;
forming a second wedge-shaped groove penetrating through the protective layer, the light-emitting epitaxial layer and part of the N-type GaN epitaxial layer by utilizing a photoetching process;
depositing a second filling material, and etching the second filling material and the protective layer to form a second wedge-shaped structure positioned in the second wedge-shaped groove;
depositing and etching N electrode metal to form N electrodes covering the first wedge-shaped structure and the second wedge-shaped structure;
depositing an insulating layer covering the N electrode and the light-emitting epitaxial layer;
forming a P electrode through hole on the light-emitting epitaxial layer in the light-emitting area of the light-emitting panel, and filling P electrode metal in the P electrode through hole to form a P electrode;
and forming an N electrode through hole positioned on the N electrode in the electrode region of the light-emitting panel, and filling N electrode metal in the N electrode through hole to form an input end of the N electrode.
In some embodiments, the step of depositing an insulating layer overlying the N-electrode and the light emitting epitaxial layer includes:
forming a first stress transfer layer covering the N electrode in a light-emitting area of the light-emitting panel;
and forming a second stress transfer layer covering the light-emitting epitaxial layer in the light-emitting region of the light-emitting panel.
In some embodiments, the first wedge structure is Al 2 O 3 Or BeO, and the second wedge-shaped structure is Cu or Au.
In some embodiments, further comprising:
bonding with the drive substrate and removing the substrate.
The light-emitting panel provided by the embodiment of the disclosure comprises a substrate, an N-type GaN epitaxial layer, a light-emitting epitaxial layer, a first wedge-shaped structure, a second wedge-shaped structure, a P electrode and an N electrode. The N-type GaN epitaxial layer and the light-emitting epitaxial layer are formed on the substrate, the first wedge-shaped structure penetrates through the light-emitting epitaxial layer and the N-type GaN epitaxial layer, the second wedge-shaped structure penetrates through the light-emitting epitaxial layer and part of the N-type GaN epitaxial layer, the P electrode is located on the light-emitting epitaxial layer, and the N electrode covers the first wedge-shaped structure and the second wedge-shaped structure. The first wedge-shaped structure and the second wedge-shaped structure can relieve larger tensile stress in the N-type GaN epitaxial layer and play a role in dividing each light-emitting unit, so that the stress of the N-type GaN epitaxial layer is released, the warping degree of the epitaxial layer is reduced, and the light-emitting efficiency is improved.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the disclosure and together with the description, serve to explain the principles of the disclosure.
In order to more clearly illustrate the embodiments of the present disclosure or the solutions in the prior art, the drawings that are required for the description of the embodiments or the prior art will be briefly described below, and it will be obvious to those skilled in the art that other drawings can be obtained from these drawings without inventive effort.
Fig. 1 is a schematic plan view of a light-emitting panel according to an embodiment of the disclosure;
FIG. 2 is a schematic cross-sectional view of a light-emitting panel according to an embodiment of the disclosure;
fig. 3a to 3i are process flow diagrams of a method for manufacturing a light-emitting panel according to an embodiment of the disclosure.
Detailed Description
In order that the above objects, features and advantages of the present disclosure may be more clearly understood, a further description of aspects of the present disclosure will be provided below. It should be noted that, without conflict, the embodiments of the present disclosure and features in the embodiments may be combined with each other.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present disclosure, but the present disclosure may be practiced otherwise than as described herein; it will be apparent that the embodiments in the specification are only some, but not all, embodiments of the disclosure.
According to the light-emitting panel provided by the embodiment of the disclosure, the first wedge-shaped structure and the second wedge-shaped structure are adopted, so that the larger tensile stress in the N-type GaN epitaxial layer can be relieved, the effect of dividing each light-emitting unit is achieved, the stress of the N-type GaN epitaxial layer is released, the warping degree of the epitaxial layer is reduced, and the light-emitting efficiency is improved.
The light emitting panel and the method for manufacturing the light emitting panel according to the embodiments of the present disclosure are described below with reference to the accompanying drawings.
Fig. 1 is a schematic plan view of a light emitting panel according to an embodiment of the present disclosure, and fig. 2 is a schematic cross-sectional view of a light emitting panel according to an embodiment of the present disclosure. As shown in fig. 1 and 2, a light emitting panel provided in an embodiment of the present disclosure includes a substrate 1, a buffer layer 2, an N-type GaN epitaxial layer 3, a light emitting epitaxial layer 4, a first wedge structure 51, a second wedge structure 52, a P electrode 6, and an N electrode 7. The buffer layer 2, the N-type GaN epitaxial layer 3 and the light-emitting epitaxial layer 4 are formed on the substrate 1, the first wedge-shaped structure 51 penetrates through the light-emitting epitaxial layer 4 and the N-type GaN epitaxial layer 3, the second wedge-shaped structure 52 penetrates through the light-emitting epitaxial layer 4 and part of the N-type GaN epitaxial layer 3, the P electrode 6 is located on the light-emitting epitaxial layer 4, and the N electrode 7 covers the first wedge-shaped structure 51 and the second wedge-shaped structure 52.
According to the light-emitting panel provided by the embodiment of the disclosure, the first wedge-shaped structure 51 and the second wedge-shaped structure 52 are adopted, so that the larger tensile stress inside the N-type GaN epitaxial layer 3 and the light-emitting epitaxial layer 4 can be relieved, the effect of dividing each light-emitting unit is achieved, the stress of the N-type GaN epitaxial layer 3 and the light-emitting epitaxial layer 4 is released, the warping degree of the epitaxial layer is reduced, and the light-emitting efficiency is improved.
In some embodiments, the total thickness of the light emitting epitaxial layer 4 and the N-type GaN epitaxial layer 3 is 3-4 μm, the height of the first wedge-shaped structures 51 is 3.6-4.6 μm, and the height of the second wedge-shaped structures 52 is 2.1-3.1 μm. The first wedge-shaped structure is etched 51 through the whole light-emitting epitaxial layer 4 and the N-type GaN epitaxial layer 3, stops on the buffer layer 2, is filled with insulating materials with high thermal expansion coefficients, and applies compressive stress to GaN on two sides of the first wedge-shaped structure 51 in the subsequent annealing process. When the first wedge-shaped structure 51 and the second wedge-shaped structure 52 are manufactured, the light emitting epitaxial layer 4 is etched and divided to form a step (MESA) 40 of the light emitting unit.
In some embodiments, the first wedge-shaped structures 51 are made of an insulating material with a high coefficient of thermal expansion, such as Al 2 O 3 Or BeO. Al (Al) 2 O 3 Can reach a thermal expansion coefficient of 7.7X10 -6 K, and has insulating properties, al 2 O 3 Enough compressive stress can be generated on the N-type GaN epitaxial layer 3, and larger tensile stress in the N-type GaN epitaxial layer 3 can be effectively relieved.
In some embodiments, the second wedge structure 52 is a metal, such as Cu or Au. The second wedge-shaped structure 52 does not penetrate the whole N-type GaN epitaxial layer 3, but is stopped in the middle of the N-type GaN epitaxial layer 3, and the second wedge-shaped structure 52 adopts a metal conductive material with a thermal expansion coefficient higher than that of GaN, can relieve the tensile stress of the N-type GaN epitaxial layer, and serves as a common cathode electrode of two adjacent light emitting units.
In some embodiments, the display panel further includes a first stress transfer layer 81 and a second stress transfer layer 82. The first stress transfer layer 81 is disposed on the N electrode 7, the second stress transfer layer 82 is disposed on the light emitting epitaxial layer 4, and the second stress transfer layer 82 is provided with a P electrode via hole in which the P electrode 6 is formed. The first stress transfer layer 81 is located at an edge region of the step 40, and the second stress transfer layer 82 is located at a middle region of the step 40.
In the light emitting area, the N electrode 7 is positioned above the first wedge-shaped structure 51 and the second wedge-shaped structure 52 to form a common cathode metal network of all light emitting units, and cathode interconnection of all light emitting units is realized through the common cathode metal network; in the electrode region, an N electrode via hole is formed in the protective layer 9 on the N electrode, and the N electrode via hole is filled with N electrode metal to form an input terminal 71 of the N electrode.
In some embodiments, the first stress-transmitting layer 81 has a hardness greater than that of the light-emitting epitaxial layer 4, the second stress-transmitting layer 82 has a hardness less than that of the P-electrode 6 and the light-emitting epitaxial layer 4, and two stress-transmitting layers of different materials are used to transmit compressive stress from the bonding interface drive pair light emission. The edges and intermediate regions of the steps 40 are subjected to different stresses due to differences in film compactness and stiffness of the stress-transmitting layer. The first stress transmission layer 81 has compact film quality and high hardness, does not absorb compressive stress, can directly apply stress on the edge of the step 40 and the first wedge-shaped structure and the second wedge-shaped structure, and converts the stress into compressive stress on the N-type GaN epitaxial layer 3 so as to release tensile stress of the N-type GaN epitaxial layer 3. The second stress transfer layer 82 has loose film quality and smaller hardness, can absorb compressive stress caused by Bonding (Bonding) interface and annealing expansion of the P electrode 6, can relieve larger compressive stress in the middle of the step 40, and improves the luminous efficiency of the LED device.
The light-emitting panel provided by the embodiment of the disclosure has the following technical effects:
(1) the first wedge-shaped structure and the second wedge-shaped structure can divide the N-type GaN epitaxial layer and the light-emitting epitaxial layer, so that the internal stress of the N-type GaN epitaxial layer can be relieved, and the light-emitting unit can be divided;
(2) the deeper first wedge-shaped structure realizes stress regulation and control by utilizing the difference of thermal expansion coefficients, and the shallower second wedge-shaped structure is filled with conductive materials to serve as a cathode electrode;
(3) a common cathode network is manufactured above the first wedge-shaped structure and the second wedge-shaped structure, and each sub-luminous unit can independently emit light by matching with the P electrode through hole;
(4) the middle area (step middle area) and the edge area (two wedge-shaped structure peripheries, including step edge area) of the light-emitting unit are filled with stress transfer layers of two different materials, and the stress of the light-emitting unit can be transferred (first stress transfer layer) or absorbed (second stress transfer layer) to bond the compressive stress of interface driving on the light-emitting unit, so that the stress of an epitaxial layer is further released, and the light-emitting efficiency of the LED is improved.
The embodiment of the disclosure also provides a manufacturing method of the light-emitting panel, which comprises the following steps:
step A: and forming an N-type GaN epitaxial layer, a light-emitting epitaxial layer and a protective layer on the substrate in sequence.
As shown in fig. 3a, a buffer layer 2 is formed on a substrate 1, and an N-type GaN epitaxial layer 3, a light-emitting epitaxial layer 4, and a protective layer 9 are sequentially formed on the buffer layer 2.
The buffer layer (buffer) 2 is about 2-3 μm thick and is epitaxially grown at a lower temperature to reduce the stress difference between the substrate and the subsequent epitaxial layer due to the lattice difference.
The thickness of the N-type GaN epitaxial layer 3 is about 1.5-2 μm.
The thickness of the light emitting epitaxial layer 4 is about 1.5-2 μm, and the light emitting epitaxial layer comprises a multi-quantum well layer, a current expanding layer, a P-type semiconductor and a P ohmic contact layer.
The thickness of the protective layer is about 0.5 μm, and SiO can be used 2 Or SiN x 。
And (B) step (B): the first wedge-shaped trench 510 penetrating the protective layer 9, the light emitting epitaxial layer 4, and the N-type GaN epitaxial layer 3 is formed using a photolithography process.
As shown in FIG. 3b, chemical etching is preferably performed using a chlorine-containing etching gas, the etching rate of the GaN material is about 300 nm/min, the etching time of the first wedge-shaped trench 510 is 12-15min, and the etching depth is 3.6-4.6 μm, so that the first wedge-shaped trench 510 is stopped on the buffer layer 2.
The chlorine-containing etching gas is selected as much as possible by adjusting the etching gas component ratio (Recipe), so that the chemical etching ratio is higher, the physical bombardment gas ratio is reduced, and the photoresist is deposited at the bottom, so that a wedge-shaped structure with a large upper part and a small lower part can be formed.
Step C: and depositing a first filling material, and etching the first filling material to form a first wedge-shaped structure positioned in the first wedge-shaped groove.
As shown in FIG. 3c, a first filler material of high thermal expansion coefficient, such as Al, is deposited 2 O 3 BeO, etc., and etching the excess first fill material around the perimeter of the first wedge-shaped trench to form the first wedge-shaped structure 51.
Step D: and forming a second wedge-shaped groove penetrating the protective layer, the light-emitting epitaxial layer and part of the N-type GaN epitaxial layer by utilizing a photoetching process.
As shown in fig. 3d, the second wedge-shaped groove 520 is preferably formed by chemical etching using a chlorine-containing etching gas, and by adjusting etching time. The etching time of the second wedge-shaped groove 520 is 7-10min, and the etching depth is 2.1-3.1 μm, so that the second wedge-shaped groove 520 stops in the middle of the N-type GaN epitaxial layer 3, and the step 40 of the light emitting unit is formed.
Step E: and depositing a second filling material, and etching the second filling material and the protective layer to form a second wedge-shaped structure positioned in the second wedge-shaped groove.
As shown in fig. 3e, a second filling material with conductivity, such as Cu or Au, is deposited, and the second wedge-shaped structures 52 are formed by etching the excess second filling material around the second wedge-shaped trench and the protective layer 9 of the light emitting area.
Step F: and depositing and etching N electrode metal to form N electrodes covering the first wedge-shaped structures and the second wedge-shaped structures.
As shown in fig. 3f, metal Al is deposited as N-electrode metal to a thickness of about 0.5 μm, and then the N-electrode metal is etched to form N-electrode 7, i.e., a common cathode metal interconnect network.
Step G: an insulating layer is deposited overlying the N-electrode and the light emitting epitaxial layer.
As shown in fig. 3g, in some embodiments, the steps specifically include:
in the light-emitting region of the light-emitting panel, a first stress transmitting layer 81 is formed to cover the N electrode 7. A first stress-transmitting layer 81 is formed over the N-electrode 7, also over the first wedge-shaped structure 51 and the second wedge-shaped structure 52, using a photolithographic process. The first stress transmission layer 81 has compact film quality and high hardness, does not absorb compressive stress, can directly act on the edge of the step 40 and the first wedge-shaped structure 51 and the second wedge-shaped structure 52, and is converted into compressive stress on the N-type GaN epitaxial layer 3 so as to release tensile stress of the N-type GaN epitaxial layer 3.
In the light-emitting region of the light-emitting panel, a second stress transfer layer 82 is formed so as to cover the light-emitting epitaxial layer 4. By utilizing the photoetching process, the second stress transfer layer 82 is formed above the light-emitting epitaxial layer 4, and the second stress transfer layer 82 is loose in film quality and small in hardness, can absorb compressive stress brought by a bonding interface and P electrode annealing expansion, can relieve larger compressive stress in the middle of the step 40, and improves the light-emitting efficiency of the LED device.
Step H: and forming a P electrode through hole on the light emitting epitaxial layer in the light emitting region of the light emitting panel, and filling P electrode metal in the P electrode through hole to form a P electrode.
As shown in fig. 3h, a P electrode via hole is formed in each light emitting cell by using a photolithography process, and then the P electrode via hole is filled with P electrode metal to form a P electrode 6.
Step I: and forming an N electrode through hole positioned on the N electrode in the electrode region of the light-emitting panel, and filling N electrode metal in the N electrode through hole to form an input end of the N electrode.
As shown in fig. 3i, a protective layer 9 is deposited on the electrode region, and the protective layer 9 is stacked together in step a, the protective layer 9 is etched by a photolithography process to form an N electrode via hole on the N electrode, and then N electrode metal is filled in the N electrode via hole to form an input terminal 71 of the N electrode for bonding with a driving substrate.
In some embodiments, the method for manufacturing a light-emitting panel further includes:
step J: bonding with the drive substrate and removing the substrate.
And bonding the light-emitting panel and the driving substrate together, and removing the silicon substrate to prepare the Micro-LED device.
The manufacturing method of the light-emitting panel provided by the disclosure has the same technical characteristics as the light-emitting panel provided by the disclosure, so that the same technical problems can be solved, and the same technical effects can be achieved.
It should be noted that in this document, relational terms such as "first" and "second" and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises an element.
The above is merely a specific embodiment of the disclosure to enable one skilled in the art to understand or practice the disclosure. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the disclosure. Thus, the present disclosure is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims (10)

1. The light-emitting panel is characterized by comprising a substrate, an N-type GaN epitaxial layer, a light-emitting epitaxial layer, a first wedge-shaped structure, a second wedge-shaped structure, a P electrode and an N electrode;
the N-type GaN epitaxial layer and the light-emitting epitaxial layer are formed on the substrate, the first wedge-shaped structure penetrates through the light-emitting epitaxial layer and the N-type GaN epitaxial layer, and the second wedge-shaped structure penetrates through the light-emitting epitaxial layer and part of the N-type GaN epitaxial layer;
the P electrode is positioned on the light-emitting epitaxial layer, and the N electrode covers the first wedge-shaped structure and the second wedge-shaped structure.
2. The light-emitting panel according to claim 1, further comprising a first stress-transmitting layer and a second stress-transmitting layer;
the first stress transfer layer is arranged on the N electrode;
the second stress transfer layer is arranged on the light-emitting epitaxial layer, a P electrode through hole is formed in the second stress transfer layer, and the P electrode is formed in the P electrode through hole.
3. The light-emitting panel according to claim 2, wherein the first stress-transmitting layer has a hardness greater than that of the light-emitting epitaxial layer, and the second stress-transmitting layer has a hardness less than that of the P-electrode and the light-emitting epitaxial layer.
4. The light emitting panel of claim 1, wherein the first wedge structure is an insulating material and the second wedge structure is a metal.
5. The light-emitting panel according to claim 4, wherein the first wedge structure is Al 2 O 3 Or BeO, and the second wedge-shaped structure is Cu or Au.
6. The light-emitting panel according to claim 1, wherein the total thickness of the light-emitting epitaxial layer and the N-type GaN epitaxial layer is 3-4 μm, the height of the first wedge-shaped structure is 3.6-4.6 μm, and the height of the second wedge-shaped structure is 2.1-3.1 μm.
7. A method of manufacturing a light emitting panel, comprising:
sequentially forming an N-type GaN epitaxial layer, a luminous epitaxial layer and a protective layer on a substrate;
forming a first wedge-shaped groove penetrating through the protective layer, the light-emitting epitaxial layer and the N-type GaN epitaxial layer by utilizing a photoetching process;
depositing a first filling material and etching the first filling material to form a first wedge-shaped structure positioned in the first wedge-shaped groove;
forming a second wedge-shaped groove penetrating through the protective layer, the light-emitting epitaxial layer and part of the N-type GaN epitaxial layer by utilizing a photoetching process;
depositing a second filling material, and etching the second filling material and the protective layer to form a second wedge-shaped structure positioned in the second wedge-shaped groove;
depositing and etching N electrode metal to form N electrodes covering the first wedge-shaped structure and the second wedge-shaped structure;
depositing an insulating layer covering the N electrode and the light-emitting epitaxial layer;
forming a P electrode through hole on the light-emitting epitaxial layer in the light-emitting area of the light-emitting panel, and filling P electrode metal in the P electrode through hole to form a P electrode;
and forming an N electrode through hole positioned on the N electrode in the electrode region of the light-emitting panel, and filling N electrode metal in the N electrode through hole to form an input end of the N electrode.
8. The method of fabricating a light-emitting panel according to claim 7, wherein the step of depositing an insulating layer covering the N-electrode and the light-emitting epitaxial layer comprises:
forming a first stress transfer layer covering the N electrode in a light-emitting area of the light-emitting panel;
and forming a second stress transfer layer covering the light-emitting epitaxial layer in the light-emitting region of the light-emitting panel.
9. The method of manufacturing a light-emitting panel according to claim 7, wherein the first wedge structure is Al 2 O 3 Or BeO, and the second wedge-shaped structure is Cu or Au.
10. The method of manufacturing a light-emitting panel according to claim 7, further comprising:
bonding with the drive substrate and removing the substrate.
CN202310734148.7A 2023-06-20 2023-06-20 Light-emitting panel and manufacturing method thereof Active CN116469907B (en)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100854282B1 (en) * 2007-02-16 2008-08-26 (주)큐에스아이 Lazer diode bar and manufacturing method thereof
US20150179876A1 (en) * 2013-12-20 2015-06-25 LuxVue Technology Corporation Led with current injection confinement trench
CN112993104A (en) * 2021-03-08 2021-06-18 深圳市奥视微科技有限公司 Method for manufacturing light emitting device and light emitting device
CN116093227A (en) * 2021-11-05 2023-05-09 广东中科半导体微纳制造技术研究院 Vertical structure deep ultraviolet LED chip and manufacturing method thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100854282B1 (en) * 2007-02-16 2008-08-26 (주)큐에스아이 Lazer diode bar and manufacturing method thereof
US20150179876A1 (en) * 2013-12-20 2015-06-25 LuxVue Technology Corporation Led with current injection confinement trench
CN112993104A (en) * 2021-03-08 2021-06-18 深圳市奥视微科技有限公司 Method for manufacturing light emitting device and light emitting device
CN116093227A (en) * 2021-11-05 2023-05-09 广东中科半导体微纳制造技术研究院 Vertical structure deep ultraviolet LED chip and manufacturing method thereof

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