CN116469906A - Integrated sensing device and preparation method thereof - Google Patents

Integrated sensing device and preparation method thereof Download PDF

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Publication number
CN116469906A
CN116469906A CN202310641963.9A CN202310641963A CN116469906A CN 116469906 A CN116469906 A CN 116469906A CN 202310641963 A CN202310641963 A CN 202310641963A CN 116469906 A CN116469906 A CN 116469906A
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China
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light emitting
optical fiber
silicon
light receiving
receiving device
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Inventor
王永进
高学强
程飞
王盛
刘鹏展
富建威
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Yantai Junnuo Intelligent Technology Co ltd
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Yantai Junnuo Intelligent Technology Co ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/02—Optical fibres with cladding with or without a coating
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Light Receiving Elements (AREA)

Abstract

The invention relates to an integrated sensing device and a preparation method thereof. The integrated sensing device comprises: a substrate; an optoelectronic integrated chip on the substrate, comprising a light emitting device and a light receiving device; the sensing structure comprises bottom silicon, a buried oxide layer positioned on the bottom silicon, top silicon positioned on the buried oxide layer, a metal reflector positioned on the top surface of the top silicon, and an opening penetrating through the bottom silicon and the buried oxide layer along a first direction; the end part of the optical fiber is aligned with the opening, and the optical signal emitted by the light emitting device is transmitted to the opening through the optical fiber, then irradiates the metal reflector through the top silicon, and the optical signal reflected by the metal reflector passes through the top silicon and is transmitted to the light receiving device through the optical fiber. The invention realizes the perception of external environment information, applies the visible light technology to the environment perception field, and expands the application field of the visible light technology.

Description

Integrated sensing device and preparation method thereof
Technical Field
The invention relates to the technical field of visible light communication, in particular to an integrated sensing device and a preparation method thereof.
Background
The visible light communication technology is to realize the transmission of information by controlling the on-off of an LED (light emitting diode). The transmission rate of the current visible light communication device can reach the Gb/s level. Conventional radio signal transmission devices have many limitations, such as high price but low efficiency, such as cell phones, in which the cell phone transmission signal is enhanced by establishing millions of base stations worldwide, but most of the energy is consumed in cooling the device, and the energy efficiency is only 5%. In contrast, the visible light communication technology essentially realizes information transmission through optical signals, and the required transmission equipment is only an LED and does not occupy the existing frequency band resources, so that mutual interference with the existing frequency band equipment is avoided, and the visible light communication mode has good communication quality and confidentiality and is more environment-friendly. Visible light communication is increasingly receiving attention from universities and research institutions as a back-up scheme for radio frequency communication. However, the conventional visible light communication device uses a PD (photodiode) as a light receiving device, which results in a large size and high cost of the device for communication using the visible light technology. In addition, the existing visible light technology is only used for transmitting multimedia information, and the application field is narrow.
Therefore, how to expand the application field of the visible light communication technology, and simultaneously reduce the volume of the visible light communication device and the cost of the visible light communication device is a technical problem to be solved.
Disclosure of Invention
The invention provides an integrated sensing device and a preparation method thereof, which are used for expanding the application field of a visible light communication technology, reducing the volume of the device based on the visible light technology and reducing the cost of the device based on the visible light technology.
In order to solve the above problems, the present invention provides an integrated sensing device, comprising:
a substrate;
an optoelectronic integrated chip on the substrate, comprising a light emitting device and a light receiving device, the light emitting device comprising a first quantum well light emitting diode and the light receiving device comprising a second quantum well light emitting diode;
the sensing structure comprises bottom silicon, a buried oxide layer positioned on the bottom silicon, top silicon positioned on the buried oxide layer, a metal reflector positioned on the top surface of the top silicon, and an opening penetrating through the bottom silicon and the buried oxide layer along a first direction, wherein the first direction is perpendicular to the top surface of the top silicon;
and the end part of the optical fiber is aligned with the opening, and the optical signal emitted by the light emitting device is transmitted to the opening through the optical fiber, then irradiates to the metal reflector through the top silicon, and the optical signal reflected by the metal reflector passes through the top silicon and is transmitted to the light receiving device through the optical fiber.
Optionally, the method further comprises:
the first lead is positioned in the substrate and is electrically connected with the optoelectronic integrated chip and used for transmitting external control signals to the optoelectronic integrated chip;
and the second lead is positioned in the substrate and electrically connected with the optoelectronic integrated chip and is used for outputting signals in the optoelectronic integrated chip to the outside.
Optionally, the method further comprises:
and the processing circuit is electrically connected with the light receiving device and is used for receiving the photocurrent signal transmitted by the light receiving device and extracting external environment information according to the photocurrent signal.
Optionally, the processing circuit includes:
an amplifying circuit connected with the light receiving device and used for amplifying the photocurrent signal output by the light receiving device;
and the filter shaping circuit is connected with the amplifying circuit and is used for carrying out filter processing and shaping processing on the photocurrent signals output by the amplifying circuit.
Optionally, the optical fiber includes a first end, and a second end opposite the first end; the integrated sensing device further comprises:
a first coupling structure located between the optoelectronic integrated chip and the first end of the optical fiber for coupling the optical signal emitted by the light emitting device into the optical fiber and for coupling the optical signal reflected by the metal mirror into the light receiving device;
and a second coupling structure located between the second end of the optical fiber and the sensing structure for coupling the optical signal from the light emitting device into the sensing structure and for coupling the optical signal reflected by the metal mirror into the optical fiber.
Optionally, the first coupling structure includes a first focusing lens, the first focusing lens being located between the light emitting device and the optical fiber;
the second coupling structure includes a second focusing lens located between the light receiving device and the optical fiber.
Optionally, the optoelectronic integrated chip further includes a substrate wafer, and the light emitting device and the light receiving device are both located on a surface of the substrate wafer;
the light emitting device comprises a plurality of first quantum well light emitting diodes which are arranged in a two-dimensional array on the surface of the substrate wafer, and the light receiving device comprises a plurality of second quantum well diodes which are arranged in a two-dimensional array on the surface of the substrate wafer;
the structure of the first quantum well light emitting diode is the same as that of the second quantum well light emitting diode.
In order to solve the above problems, the present invention further provides a method for manufacturing an integrated sensing device, comprising the following steps:
forming an optoelectronic integrated chip comprising a light emitting device comprising a first quantum well light emitting diode and a light receiving device comprising a second quantum well light emitting diode;
connecting the optoelectronic integrated chip with the substrate;
forming a sensing structure comprising bottom silicon, a buried oxide layer on the bottom silicon, top silicon on the buried oxide layer, a metal mirror on the top surface of the top silicon, and an opening penetrating the bottom silicon and the buried oxide layer along a first direction, the first direction being perpendicular to the top surface of the top silicon;
the optoelectronic integrated chip is coupled with the optical fiber, the sensing structure is coupled with the optical fiber, the end part of the optical fiber is aligned with the opening, an optical signal emitted by the light emitting device is transmitted to the opening through the optical fiber, then irradiates to the metal reflecting mirror through the top silicon, and the optical signal reflected by the metal reflecting mirror passes through the top silicon and is transmitted to the light receiving device through the optical fiber.
Optionally, the specific steps of forming the optoelectronic integrated chip include:
providing a substrate wafer;
and forming the light emitting device and the light receiving device on the substrate wafer, wherein the structure of the first quantum well light emitting diode in the light emitting device is the same as the structure of the second quantum well light emitting diode in the light receiving device, and the optoelectronic integrated chip comprising the substrate wafer, the light emitting device and the light receiving device is formed.
Optionally, the specific step of forming the sensing structure includes:
forming a substrate, wherein the substrate comprises bottom silicon, a buried oxide layer positioned on the bottom silicon and top silicon positioned on the buried oxide layer;
depositing a metal material on the top surface of the top silicon layer to form the metal reflecting mirror;
and removing part of the bottom layer silicon and part of the buried oxide layer to form an opening penetrating through the bottom layer silicon and the buried oxide layer along a first direction.
According to the integrated sensing device and the preparation method thereof, the sensing structure and the optoelectronic integrated chip are connected, so that the light signals emitted by the light emitting device can be received by the light receiving device after being reflected by the metal reflecting mirror in the sensing structure, the influence of the external environment on the metal reflecting mirror is obtained by analyzing the light signals emitted by the light emitting device and the light signals received by the light receiving device, namely, the information of external environment change is obtained, further, the sensing of the external environment information is realized, the visible light technology is applied to the environment sensing field, and the application field of the visible light technology is expanded. Meanwhile, the light emitting device and the light receiving device in the optoelectronic chip are both in quantum well diode structures, so that the whole size of the optoelectronic integrated sensing device is reduced, and the manufacturing cost of the optoelectronic integrated sensing device is reduced. In addition, the optoelectronic integrated chip and the sensing structure are connected through optical fiber coupling, so that remote sensing of external environment information can be realized, and the functions and the application fields of the integrated sensing device are further expanded.
Drawings
FIG. 1 is a schematic diagram of an integrated sensing device according to an embodiment of the present invention;
FIG. 2 is a schematic cross-sectional view of a sensing structure in an embodiment of the invention;
FIG. 3 is a schematic top view of an optoelectronic integrated chip in accordance with an embodiment of the present invention;
FIG. 4 is a flow chart of a method for manufacturing an integrated sensing device according to an embodiment of the present invention.
Detailed Description
The following describes in detail the specific embodiments of the integrated sensing device and the manufacturing method thereof provided by the invention with reference to the accompanying drawings.
In this embodiment, an integrated sensing device is provided, fig. 1 is a schematic structural diagram of the integrated sensing device in the embodiment of the present invention, fig. 2 is a schematic sectional diagram of a sensing structure in the embodiment of the present invention, and fig. 3 is a schematic top view of an optoelectronic integrated chip in the embodiment of the present invention. As shown in fig. 1-3, the integrated sensing device includes:
a substrate 10;
an optoelectronic integrated chip 16 on the substrate 10, comprising a light emitting device 31 and a light receiving device 32, the light emitting device 31 comprising a first quantum well light emitting diode and the light receiving device 32 comprising a second quantum well light emitting diode;
a sensing structure comprising a bottom silicon 11, a buried oxide layer 12 on the bottom silicon 11, a top silicon 13 on the buried oxide layer 12, a metal mirror 14 on a top surface of the top silicon 13, and an opening 20 penetrating the bottom silicon 11 and the buried oxide layer 12 along a first direction D1, the first direction D1 being perpendicular to the top surface of the top silicon 13;
an optical fiber 15, the end of the optical fiber 15 is aligned with the opening 20, and the optical signal emitted by the light emitting device 31 is transmitted to the opening 20 through the optical fiber 15, then irradiated to the metal mirror 14 through the top silicon 13, and the optical signal reflected by the metal mirror 14 passes through the top silicon 13 and is transmitted to the light receiving device 32 through the optical fiber 15.
Specifically, the sensing structure includes a Silicon-On-Insulator (SOI) substrate, and the metal mirror 14 On the SOI substrate. The SOI substrate comprises the bottom silicon 11, the buried oxide layer 12 and the top silicon 13 stacked in this order along the first direction D1, and the metal mirror 14 covers the entire top surface of the top silicon 13 (i.e. the surface of the top silicon 13 facing away from the buried oxide layer 12). The opening 20 extends from the bottom silicon 11 toward the inside of the SOI substrate, continuously penetrates the bottom silicon 11 and the buried oxide layer 12 along the first direction D1, and exposes the top silicon 13 to form a suspended metal mirror structure. The optical fiber 15 is coupled to both the optoelectronic integrated chip 16 and the sensing structure, and the end of the optical fiber 15 coupled to the sensing structure is aligned with the opening 20, such that the optical signal emitted by the light emitting device 31 in the optoelectronic integrated chip 16 can be coupled to the optical fiber 15, transmitted along the optical fiber 15 to the opening 20 in the sensing structure, and propagated along the opening 20 and irradiated to the metal mirror 14 through the top silicon 113. The optical signal after being reflected by the metal mirror 14 penetrates the top silicon 13 and propagates along the opening 20, and after being coupled into the optical fiber 15, is transmitted to the light receiving device 32 via the optical fiber 15 to be received by the light receiving device 32. Solid arrows in fig. 1 represent propagation paths of the optical signals emitted from the light emitting devices 15, and broken arrows represent propagation paths of the optical signals after being emitted via the metal mirror 14. The connection mode of the optoelectronic integrated chip and the sensing structure can be, but is not limited to, bonding connection. In this embodiment, the light emitting device 15 and the light receiving device 16 are arranged at intervals along the second direction D2, and a person skilled in the art may adjust the relative positional relationship between the light emitting device 15 and the light receiving device 16 according to actual needs. The second direction D1 is parallel to the top surface of the top silicon 13. The specific number of the light emitting devices 15 and the receiving devices 16 in the optoelectronic integrated chip 16 may be one or more, and those skilled in the art may select the specific number according to actual needs.
When external environmental information (such as information of vibration, pressure, etc.) changes, for example, when the external environment changes to cause the metal mirror 14 to vibrate, the emission of the optical signal reflected by the metal mirror 14 may be caused to change, for example, to cause a change in the transmission angle of the optical signal reflected by the metal mirror 14 and/or the intensity of the optical signal received by the light receiving device 16. By analyzing the difference between the optical signal emitted by the light emitting device 15 and the optical signal received by the light receiving device 16, the change information of the external environment is obtained, thereby realizing the perception of the external environment. Alternatively, the intensity and the emission frequency of the optical signal emitted by the light emitting device 15 are kept unchanged, and the change information of the external environment is obtained by analyzing the difference between the optical signal received by the light receiving device 16 and a preset receiving signal, so as to realize the perception of the external environment. Wherein the preset received signal refers to the intensity and/or angle of the optical signal received by the light receiving device 16 when the external environment information is not changed. In addition, in this embodiment, the optoelectronic integrated chip 16 and the sensing structure are coupled by the optical fiber, so that on one hand, the distance between the optoelectronic integrated chip 16 and the sensing structure can be increased, and remote sensing can be realized; on the other hand, the optoelectronic integrated chip 16 and the sensing structure do not need to be bonded and/or aligned, so that the manufacturing process of the integrated sensing device is greatly simplified. Moreover, in this embodiment, by aligning the end portion of the optical fiber 15 with the opening 20, on one hand, the influence of the external environment light signal on the light signal received by the light receiving device 16 can be avoided, so as to further improve the sensing accuracy and reliability of the optoelectronic integrated sensing device; on the other hand, the sensitivity of the metal mirror 14 to the external environment information can be improved, and the sensing accuracy and reliability of the optoelectronic integrated sensing device can be improved.
The alignment of the end of the optical fiber 15 with the opening 20 means that the projection of the end of the optical fiber 15 towards the sensing structure onto the bottom surface of the top layer silicon 13 at least partly overlaps the projection of the opening 20 onto the bottom surface of the top layer silicon 13. In an example, the projection of the opening 20 on the bottom surface of the top silicon 13 is located within the projection of the end of the optical fiber 15 towards the sensing structure on the bottom surface of the top silicon 13, so as to ensure that the light signal emitted by the light emitting device 31 can be more fully directed towards the metal mirror 14, further improving the sensitivity and accuracy of the environmental sensing.
The thickness of the top silicon 13 should not be too thick, otherwise, the optical signal is more lost when passing through the top silicon 13, which affects the accuracy and reliability of environmental perception; the thickness of the top silicon 13 is not too thin, which would affect the process stability of the top silicon 13 to the metal mirror 14. Optionally, the thickness of the top layer silicon 13 along the first direction D1 is 260nm, so as to reduce the loss of the optical signal during the transmission process inside the top layer silicon 13 while ensuring stable support of the top layer silicon 13 on the metal mirror 14.
In order to enhance the light reflection effect of the metal mirror 14, the thickness of the metal mirror 14 may be between 50nm and 200nm. The thickness of the metal mirror 14 refers to the thickness of the metal mirror 14 along the first direction D1.
Optionally, the integrated sensing device further includes:
a first lead, located in the substrate 10, electrically connected to the optoelectronic integrated chip 16, for transmitting an external control signal to the optoelectronic integrated chip 16;
and a second lead wire, which is located in the substrate 10 and is electrically connected with the optoelectronic integrated chip 16, and is used for outputting signals in the optoelectronic integrated chip 16 to the outside.
The number of the first leads may be one or more, and the number of the second leads may be one or more. The plurality of the present embodiments means two or more. For example, the substrate 10 is a PCB (printed circuit board ) substrate. A power signal from the outside is transmitted to the optoelectronic integrated chip 16 through the first lead, so that the light emitting device 31 turns on a light emitting mode and the light receiving device 32 turns on a light receiving mode, that is, a light emitting function and a light receiving function of the optoelectronic integrated chip 16 are started. The optical signal emitted from the light emitting device 31 is transmitted through the optical fiber 15, reflected by the metal mirror 14, and transmitted to the light receiving device 32 along the optical fiber 15, and then transmitted to the outside through the second lead wire, so as to analyze the optical signal received by the light receiving device 32.
Optionally, the integrated sensing device further includes:
and a processing circuit electrically connected to the light receiving device 32, for receiving the photocurrent signal transmitted by the light receiving device 32, and extracting external environment information according to the photocurrent signal.
Optionally, the processing circuit includes:
an amplifying circuit connected to the light receiving device for amplifying the photocurrent signal outputted from the light receiving device 32;
and the filter shaping circuit is connected with the amplifying circuit and is used for carrying out filter processing and shaping processing on the photocurrent signals output by the amplifying circuit.
For example, the processing circuit is located outside the optoelectronic integrated chip 16, and after the light receiving device 31 receives the light signal reflected by the metal mirror 14, the light signal is converted into the photocurrent signal, and the photocurrent signal is transmitted to the processing circuit through the second lead. The processing circuit performs amplification, filtering, shaping, judgment and other processing on the photocurrent signal to acquire and restore the change information of the external environment so as to realize the perception of the external environment.
In order to enhance the reflection effect of the metal mirror 14, optionally, the material of the metal mirror 14 is Au.
To further increase the flexibility of the placement of the sensing structure, the optical fiber 15, and the optoelectronic integrated chip, the optical fiber 15 may optionally include a first end 151 and a second end 152 opposite the first end 151; the integrated sensing device further comprises:
a first coupling structure 17, located between the optoelectronic integrated chip 16 and the first end 151 of the optical fiber 15, for coupling the optical signal emitted by the light emitting device 31 into the optical fiber 15 and for coupling the optical signal reflected by the metal mirror 14 into the light receiving device 32;
a second coupling structure, located between the second end 152 of the optical fiber 15 and the sensing structure, for coupling the optical signal from the light emitting device 31 into the sensing structure and for coupling the optical signal reflected by the metal mirror 14 into the optical fiber 15.
Optionally, the first coupling structure comprises a first focusing lens, which is located between the light emitting device 31 and the optical fiber 15;
the second coupling structure includes a second focusing lens located between the light receiving device 32 and the optical fiber 15.
Specifically, the optical signal emitted by the light emitting device 31 is coupled into the first end 151 of the optical fiber 15 via the first coupling structure 17, and is coupled to the opening 20 in the sensing structure via the second coupling structure (not shown) after being transmitted to the second end 152 via the optical fiber 15. The optical signal reflected by the metal mirror 14 is coupled to the second end 152 of the optical fiber 15 via the second coupling structure, and is coupled to the light receiving device 32 in the optoelectronic integrated chip 16 via the first coupling structure 17 after being transmitted to the first end 151 via the optical fiber 15. The first coupling structure 17 includes the first focusing lens between the light emitting device 31 and the optical fiber 15, which not only improves the collimation of the light signal emitted from the light emitting device 31, but also improves the coupling efficiency between the light emitting device 31 and the optical fiber 15, and reduces the loss of the light signal emitted from the light emitting device 31. The second coupling structure includes the second focusing lens between the light receiving device 32 and the optical fiber 15, which can not only improve the collimation of the optical signal reflected by the metal mirror 14, but also improve the coupling efficiency between the optical fiber 15 and the light receiving device 32, reduce the loss of the optical signal reflected by the metal mirror 14, and improve the sensitivity and reliability of sensing signal detection. In some embodiments, the first coupling structure 17 and/or the second coupling structure may further include a structure such as a mirror to adjust a propagation path of the optical signal, so as to more flexibly set a relative positional relationship between the optoelectronic integrated chip 16 and the optical fiber 15, and between the optical fiber 15 and the sensing structure.
Optionally, the optoelectronic integrated chip 16 further includes a substrate wafer 30, and the light emitting device 31 and the light receiving device 32 are both located on a surface of the substrate wafer 30;
the light emitting device 31 includes a plurality of the first quantum well light emitting diodes arranged in a two-dimensional array on the surface of the substrate wafer 30, and the light receiving device 32 includes a plurality of the second quantum well diodes arranged in a two-dimensional array on the surface of the substrate wafer 30;
the structure of the first quantum well light emitting diode is the same as that of the second quantum well light emitting diode.
Specifically, since the emission spectrum and the detection spectrum of the GaN-based quantum well light-emitting diode have overlapping regions, the first quantum well light-emitting diode and the second quantum well light-emitting diode may each be provided as a GaN-based quantum well light-emitting diode. The light emitting device 31 includes a plurality of the first quantum well light emitting diodes arranged in an array, and the light receiving device 32 includes a plurality of the second quantum well diodes arranged in an array. The plural numbers described in this embodiment mode refer to two or more. The structure of the first quantum well light emitting diode is the same as that of the second quantum well light emitting diode, so that the first quantum well diode and the second quantum well diode can be formed simultaneously, so that the light emitting device 31 and the light receiving device 32 are integrated on the same substrate wafer 30, and the manufacturing process of the integrated sensing device is further simplified. The light emitting device 31 and the light receiving device 32 may be electrically isolated by an isolation structure.
The light emitting device 31 includes a plurality of the first quantum well light emitting diodes arranged in a two-dimensional array on the surface of the substrate wafer 30, so that the intensity of the light signal emitted by the light emitting device 31 can be enhanced, thereby improving the detection sensitivity of the integrated sensing device. The light receiving device 32 includes a plurality of the second quantum well diodes arranged in a two-dimensional array on the surface of the substrate wafer 30, thereby improving the receiving sensitivity of the light receiving device 32, reducing omission of the optical signal emitted through the metal mirror 14, and thereby improving the detection sensitivity of the integrated sensing device.
In some embodiments, the plurality of light emitting devices 31 are arranged at intervals along a first direction, the plurality of light receiving devices 32 are arranged at intervals along a second direction, the first direction and the second direction are parallel to the surface of the substrate wafer 30, and the first direction intersects the second direction. In other embodiments, a plurality of the light emitting devices 31 can also be distributed around the outer circumference of one of the light receiving devices 32.
The embodiment also provides a preparation method of the integrated sensing device, and fig. 4 is a flowchart of the preparation method of the integrated sensing device in the embodiment of the invention. The schematic structural diagram of the integrated sensing device prepared in this embodiment may be seen in fig. 1-3. As shown in fig. 1 to 4, the preparation method of the integrated sensing device includes the following steps:
step S41, forming an optoelectronic integrated chip 16, the optoelectronic integrated chip 16 comprising a light emitting device 31 and a light receiving device 32, the light emitting device 31 comprising a first quantum well light emitting diode and the light receiving device 32 comprising a second quantum well light emitting diode;
step S42, connecting the optoelectronic integrated chip 16 with the substrate 10;
step S43, forming a sensing structure, wherein the sensing structure comprises bottom silicon 11, a buried oxide layer 12 positioned on the bottom silicon 11, top silicon 13 positioned on the buried oxide layer 12, a metal reflector 14 positioned on the top surface of the top silicon 13, and an opening 20 penetrating through the bottom silicon 11 and the buried oxide layer 12 along a first direction D1, and the first direction D1 is perpendicular to the top surface of the top silicon 13;
in step S44, the optoelectronic integrated chip 16 is coupled to the optical fiber 15, and the sensing structure is coupled to the optical fiber 15, the end of the optical fiber 15 is aligned to the opening 20, the optical signal emitted by the light emitting device 31 is transmitted to the opening 20 through the optical fiber 15, then irradiated to the metal mirror 14 through the top silicon 13, and the optical signal reflected by the metal mirror 14 is transmitted to the light receiving device 32 through the optical fiber 15 through the top silicon 13.
Optionally, specific steps for forming the optoelectronic integrated chip 16 include:
providing a substrate wafer 30;
the light emitting device 31 and the light receiving device 32 are formed on the substrate wafer 30, and the structure of the first quantum well light emitting diode in the light emitting device 31 is the same as the structure of the second quantum well light emitting diode in the light receiving device 32, forming the optoelectronic integrated chip 16 including the substrate wafer 30, the light emitting device 31 and the light receiving device 32.
Optionally, the specific step of forming the sensing structure includes:
forming a substrate, wherein the substrate comprises bottom silicon 11, a buried oxide layer 12 positioned on the bottom silicon 11, and top silicon 13 positioned on the buried oxide layer 12;
depositing a metal material on the top surface of the top silicon 13 to form the metal mirror 14;
a portion of the underlying silicon 11 and a portion of the buried oxide layer 12 are removed, forming an opening 20 extending through the underlying silicon 11 and the buried oxide layer 12 in a first direction D1.
Specifically, after the substrate including the bottom layer silicon 11, the buried oxide layer 12, and the top layer silicon 13 is formed, the substrate is subjected to a thinning process using a Chemical Mechanical Polishing (CMP), for example, the thickness of the substrate is thinned using a back-side thinning process so that the thickness of the substrate is 200 μm. And then, depositing an Au film with the thickness of 50 nm-200 nm on the top surface of the top silicon 13 with the thickness of 260nm by adopting an electronic vapor deposition or metal deposition mode to form the metal reflecting mirror 14. Then, a photolithography process and a deep silicon etching process may be used to remove a portion of the underlying silicon 11 and a portion of the buried oxide layer 12, so as to form the opening 20, so that the metal mirror 14 is suspended, so that the metal mirror 14 can sense the external environmental change. In one example, the buried oxide layer 12 is silicon dioxide.
According to the integrated sensing device and the preparation method thereof, the sensing structure and the optoelectronic integrated chip are connected, so that an optical signal emitted by the light emitting device can be received by the light receiving device after being reflected by the metal reflecting mirror in the sensing structure, the influence of the external environment on the metal reflecting mirror is obtained by analyzing the optical signal emitted by the light emitting device and the optical signal received by the light receiving device, namely, information of external environment change is obtained, further, the sensing of the external environment information is realized, the visible light technology is applied to the environment sensing field, and the application field of the visible light technology is expanded. Meanwhile, the light emitting device and the light receiving device in the optoelectronic chip are both in quantum well diode structures, so that the whole size of the optoelectronic integrated sensing device is reduced, and the manufacturing cost of the optoelectronic integrated sensing device is reduced. In addition, the optoelectronic integrated chip and the sensing structure are connected through optical fiber coupling in the specific embodiment, so that the remote sensing of external environment information can be realized, and the functions and the application fields of the integrated sensing device are further expanded.
The foregoing is merely a preferred embodiment of the present invention and it should be noted that modifications and adaptations to those skilled in the art may be made without departing from the principles of the present invention, which are intended to be comprehended within the scope of the present invention.

Claims (10)

1. An integrated sensing device, comprising:
a substrate;
an optoelectronic integrated chip on the substrate, comprising a light emitting device and a light receiving device, the light emitting device comprising a first quantum well light emitting diode and the light receiving device comprising a second quantum well light emitting diode;
the sensing structure comprises bottom silicon, a buried oxide layer positioned on the bottom silicon, top silicon positioned on the buried oxide layer, a metal reflector positioned on the top surface of the top silicon, and an opening penetrating through the bottom silicon and the buried oxide layer along a first direction, wherein the first direction is perpendicular to the top surface of the top silicon;
and the end part of the optical fiber is aligned with the opening, and the optical signal emitted by the light emitting device is transmitted to the opening through the optical fiber, then irradiates to the metal reflector through the top silicon, and the optical signal reflected by the metal reflector passes through the top silicon and is transmitted to the light receiving device through the optical fiber.
2. The integrated sensing device of claim 1, further comprising:
the first lead is positioned in the substrate and is electrically connected with the optoelectronic integrated chip and used for transmitting external control signals to the optoelectronic integrated chip;
and the second lead is positioned in the substrate and electrically connected with the optoelectronic integrated chip and is used for outputting signals in the optoelectronic integrated chip to the outside.
3. The integrated sensing device of claim 1, further comprising:
and the processing circuit is electrically connected with the light receiving device and is used for receiving the photocurrent signal transmitted by the light receiving device and extracting external environment information according to the photocurrent signal.
4. The integrated sensing device of claim 3, wherein the processing circuit comprises: an amplifying circuit connected with the light receiving device and used for amplifying the photocurrent signal output by the light receiving device;
and the filter shaping circuit is connected with the amplifying circuit and is used for carrying out filter processing and shaping processing on the photocurrent signals output by the amplifying circuit.
5. The integrated sensing device of claim 1, wherein the optical fiber comprises a first end and a second end opposite the first end; the integrated sensing device further comprises:
a first coupling structure located between the optoelectronic integrated chip and the first end of the optical fiber for coupling the optical signal emitted by the light emitting device into the optical fiber and for coupling the optical signal reflected by the metal mirror into the light receiving device;
and a second coupling structure located between the second end of the optical fiber and the sensing structure for coupling the optical signal from the light emitting device into the sensing structure and for coupling the optical signal reflected by the metal mirror into the optical fiber.
6. The integrated sensing apparatus of claim 5, wherein the first coupling structure comprises a first focusing lens positioned between the light emitting device and the optical fiber; the second coupling structure includes a second focusing lens located between the light receiving device and the optical fiber.
7. The integrated sensing device of claim 1, wherein the optoelectronic integrated chip further comprises a substrate wafer, the light emitting device and the light receiving device being both located on a surface of the substrate wafer;
the light emitting device comprises a plurality of first quantum well light emitting diodes which are arranged in a two-dimensional array on the surface of the substrate wafer, and the light receiving device comprises a plurality of second quantum well diodes which are arranged in a two-dimensional array on the surface of the substrate wafer;
the structure of the first quantum well light emitting diode is the same as that of the second quantum well light emitting diode.
8. The preparation method of the integrated sensing device is characterized by comprising the following steps of:
forming an optoelectronic integrated chip comprising a light emitting device comprising a first quantum well light emitting diode and a light receiving device comprising a second quantum well light emitting diode;
connecting the optoelectronic integrated chip with the substrate;
forming a sensing structure comprising bottom silicon, a buried oxide layer on the bottom silicon, top silicon on the buried oxide layer, a metal mirror on the top surface of the top silicon, and an opening penetrating the bottom silicon and the buried oxide layer along a first direction, the first direction being perpendicular to the top surface of the top silicon;
the optoelectronic integrated chip is coupled with the optical fiber, the sensing structure is coupled with the optical fiber, the end part of the optical fiber is aligned with the opening, an optical signal emitted by the light emitting device is transmitted to the opening through the optical fiber, then irradiates to the metal reflecting mirror through the top silicon, and the optical signal reflected by the metal reflecting mirror passes through the top silicon and is transmitted to the light receiving device through the optical fiber.
9. The method of manufacturing an integrated sensing device of claim 8, wherein the specific steps of forming an optoelectronic integrated chip comprise:
providing a substrate wafer;
and forming the light emitting device and the light receiving device on the substrate wafer, wherein the structure of the first quantum well light emitting diode in the light emitting device is the same as the structure of the second quantum well light emitting diode in the light receiving device, and the optoelectronic integrated chip comprising the substrate wafer, the light emitting device and the light receiving device is formed.
10. The method of manufacturing an integrated sensing device of claim 8, wherein the specific step of forming the sensing structure comprises:
forming a substrate, wherein the substrate comprises bottom silicon, a buried oxide layer positioned on the bottom silicon and top silicon positioned on the buried oxide layer;
depositing a metal material on the top surface of the top silicon layer to form the metal reflecting mirror;
and removing part of the bottom layer silicon and part of the buried oxide layer to form an opening penetrating through the bottom layer silicon and the buried oxide layer along a first direction.
CN202310641963.9A 2022-11-09 2023-05-31 Integrated sensing device and preparation method thereof Pending CN116469906A (en)

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CN202211395420 2022-11-09
CN2022113954205 2022-11-09

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