CN116469742A - Protection window for semiconductor vacuum equipment and semiconductor vacuum equipment - Google Patents
Protection window for semiconductor vacuum equipment and semiconductor vacuum equipment Download PDFInfo
- Publication number
- CN116469742A CN116469742A CN202210026128.XA CN202210026128A CN116469742A CN 116469742 A CN116469742 A CN 116469742A CN 202210026128 A CN202210026128 A CN 202210026128A CN 116469742 A CN116469742 A CN 116469742A
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- Prior art keywords
- extraction opening
- window
- semiconductor
- molecular pump
- blades
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 47
- 238000000605 extraction Methods 0.000 claims abstract description 44
- 230000001681 protective effect Effects 0.000 claims abstract description 26
- 238000005086 pumping Methods 0.000 claims description 24
- 238000005530 etching Methods 0.000 abstract description 24
- 238000004544 sputter deposition Methods 0.000 abstract description 13
- 150000002500 ions Chemical class 0.000 description 22
- 239000000463 material Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 5
- 239000002245 particle Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000010884 ion-beam technique Methods 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 125000003636 chemical group Chemical group 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/18—Vacuum locks ; Means for obtaining or maintaining the desired pressure within the vessel
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The invention discloses a protection window for a semiconductor vacuum device and the semiconductor vacuum device, wherein the semiconductor vacuum device comprises: the vacuum cavity is provided with an extraction opening; the molecular pump is arranged at the air extraction opening and is used for extracting air flow in the vacuum chamber; the switch valve is arranged between the molecular pump and the air extraction opening to open or close the air extraction opening; the protection window is arranged at the extraction opening and is positioned at one side of the switch valve facing the vacuum cavity, the protection window comprises a frame and a plurality of blades, the shape of the frame is consistent with that of the extraction opening, the blades are uniformly arranged at intervals along the radial direction outwards by taking the center of the frame as the center, two sides of each blade are at a preset angle alpha on the axial section perpendicular to the plane where the protection window is positioned, and a preset overlapping area a corresponding to the preset angle is arranged between two radially adjacent blades. According to the protective window provided by the embodiment of the invention, the air suction speed can be ensured, and etching products or sputtering matters are prevented from entering the molecular pump.
Description
Technical Field
The invention relates to the technical field of semiconductor equipment, in particular to a protective window for semiconductor vacuum equipment and the semiconductor vacuum equipment.
Background
Vacuum devices are used in a wide variety of applications in the semiconductor industry, including inductively coupled plasma etching (ICP), ion Beam Etching (IBE), electron beam evaporation stations, and sputtering stations (sputtering), among others. The common characteristics of the vacuum equipment are as follows: under high vacuum condition, high frequency electromagnetic wave is provided by radio frequency RF to excite gas molecules into plasma, then the movement direction and movement momentum of ions are controlled by electric field or magnetic field, the ions are beaten on the etching layer of the wafer or on the surface of the target material, complex physicochemical reaction is generated after the ions contact the film layer to generate new chemical groups (wherein sputtering and IBE do not generate chemical reaction and only generate physical reaction), and the subsequent ions can strike the chemical groups to generate sputtering (sputtering objects are etching products) and deposit on the inner lining of the vacuum cavity and enter the molecular pump. Particularly, for the positive up pumping and the lateral pumping, the molecular pump of the vacuum device is arranged at the upper part or the lateral surface of the cavity, so that etching products are more easily deposited.
Further, since the molecular pump pumps the gas molecules by a blade (typically up to 3 ten thousand rotations) rotating at high speed, the dynamic balance of the blade is required to be very good. However, in the prior art, the pumping hole of the vacuum equipment connected with the molecular pump is not provided with a special deposition prevention protection or has poor protection effect, so that a large amount of etching products or sputtering matters can enter the molecular pump in the process, and deposit on the blades to cause the dynamic balance failure of the rotor, and the pump is exploded when serious, so that the molecular pump is damaged.
Disclosure of Invention
The present invention aims to solve at least one of the technical problems existing in the prior art.
Therefore, the invention provides the protective window for the semiconductor vacuum equipment, which can effectively prevent etching products or sputtering matters in the vacuum cavity from entering the molecular pump so as to ensure the service performance of the molecular pump.
The invention also provides the semiconductor vacuum equipment with the protective window for the semiconductor vacuum equipment.
According to an embodiment of the first aspect of the present invention, a protection window for a semiconductor vacuum apparatus, the semiconductor vacuum apparatus includes: the vacuum cavity is provided with an extraction opening; the molecular pump is arranged at the air extraction opening and used for extracting air flow in the vacuum chamber; the switch valve is arranged between the molecular pump and the air extraction opening to open or close the air extraction opening; the protection window is arranged at the extraction opening and is positioned on one side of the switch valve, facing the vacuum cavity, and comprises a frame and a plurality of blades, wherein the shape of the frame is consistent with that of the extraction opening, the blades are uniformly arranged at intervals along the radial direction outwards by taking the center of the frame as the center, two sides of each blade are at a preset angle alpha on the axial section perpendicular to the plane where the protection window is positioned, and a preset overlapping area a corresponding to the preset angle is arranged between two radially adjacent blades.
According to the protective window for the semiconductor vacuum equipment, gaps are reserved between adjacent blades of the protective window, so that gas molecules can pass through, the air extraction speed is ensured, and etching products or sputtering objects can be effectively prevented from entering the molecular pump.
According to one embodiment of the invention, the predetermined angle α is in the range of 60 ° to 120 °, and the predetermined overlap area a is in the range of 5mm to 30mm.
According to an alternative example of the invention, the axial thickness h of each of the blades ranges from 30mm to 60mm.
According to another embodiment of the present invention, the plurality of blades in the radial direction are fixedly connected to the rim by a first fixing shaft and a second fixing shaft, respectively, the first fixing shaft and the second fixing shaft being in a cross shape.
According to a further embodiment of the invention, the two edges of each of the blades are symmetrically arranged with the first or second fixed shaft in an axial section perpendicular to the plane of the protective window.
According to a further embodiment of the invention, the surfaces of the plurality of blades and the rim are sandblasted to enhance the roughness of the surface of the protective window.
Further, the roughness of the surface of the protective window is kept between 2.0 and 5.0.
According to a further embodiment of the invention, the rim is formed as a circle, oval or polygon.
A semiconductor vacuum apparatus according to an embodiment of the present invention includes:
the vacuum cavity is provided with an extraction opening;
the molecular pump is arranged at the air extraction opening and used for extracting air flow in the vacuum chamber;
the switch valve is arranged between the molecular pump and the air extraction opening to open or close the air extraction opening;
the protection window for a semiconductor vacuum apparatus according to the above embodiment is provided at the pumping port and is located at a side of the switching valve facing the vacuum chamber.
According to one embodiment of the present invention, the protection window includes a plurality of protection windows, and the plurality of protection windows are sequentially stacked in an axial direction of the pumping port.
According to still another embodiment of the present invention, the semiconductor vacuum apparatus further includes:
the dry pump is arranged outside the vacuum cavity, and the dry pump is connected with the molecular pump through an air exhaust pipeline;
the slide holder is arranged in the vacuum cavity, the slide holder is arranged opposite to the air extraction opening, and a wafer is placed on the slide holder;
and the ion source is arranged on one side of the vacuum cavity.
According to the semiconductor vacuum equipment provided by the embodiment of the invention, gaps are reserved between the adjacent blades of the protection window, so that gas molecules can pass through, the air extraction speed is ensured, and etching products or sputtering matters can be effectively prevented from entering the molecular pump.
Additional aspects and advantages of the invention will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention.
Drawings
The foregoing and/or additional aspects and advantages of the invention will become apparent and may be better understood from the following description of embodiments taken in conjunction with the accompanying drawings in which:
fig. 1 is a schematic view of a structure of a prior art semiconductor vacuum apparatus;
fig. 2 is a schematic structural view of a semiconductor vacuum apparatus in accordance with an embodiment of the present invention;
FIG. 3 is a top view of a protective window according to an embodiment of the invention;
FIG. 4 is a cross-sectional view taken along line A-A of FIG. 3；
FIG. 5 is a schematic view of the structure of FIG. 4 at C;
FIG. 6 is a schematic view of the flow direction of the etch products and gas streams in FIG. 4;
fig. 7 is a perspective view of a protective window according to an embodiment of the present invention.
Reference numerals:
the reference numerals in fig. 1 are as follows:
vacuum chamber 10', pumping port 11', molecular pump 20', on-off valve 30'.
The reference numerals in fig. 2-7 are as follows:
a semiconductor vacuum device 100,
The vacuum chamber 10, the pumping port 11, the molecular pump 20, the switching valve 30, the protection window 40, the frame 41, the blades 42, the highest deposition area 421, the cover plate 43, the first fixed shaft 44, the second fixed shaft 45, the frame positioning hole 46, the front stage pumping pipeline 47, the dry pump 48, the slide holder 49, the wafer 50, the ion source 60, the air inlet pipeline 61 and the grid 70.
Detailed Description
Embodiments of the present invention are described in detail below, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to like or similar elements or elements having like or similar functions throughout. The embodiments described below by referring to the drawings are illustrative only and are not to be construed as limiting the invention.
In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "axial", "radial", "circumferential", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings are merely for convenience in describing the present invention and to simplify the description, and do not indicate or imply that the device or element being referred to must have a specific orientation, be configured and operated in a specific orientation, and therefore should not be construed as limiting the present invention.
Taking an ion beam etching system (IBE) as an example, the structure is shown in fig. 1, and when the ion source is started to generate ions, the ions are emitted along the grid holes, and the directions are shown by right arrows. The ions are neutralized by electrons excited by the neutralizer, and the neutralized particles rapidly move to strike the surface of the wafer, so that etching products are sputtered out and deposited on the inner wall of the vacuum cavity 10' along the upward direction, and a part of etching products enter the switch valve 30' and the molecular pump 20' and adhere to the blades of the molecular pump 20', thereby reducing the service life of the molecular pump 20', and reducing the pumping capacity.
The main reason for the above problems in the prior art is that: the vacuum chamber 10 'is not provided with a protective structure at the air extraction opening 11', and even if the protective structure is required to not only affect the air extraction speed, but also prevent etching products from entering the molecular pump 20', and the flow direction of the air flow in the vacuum chamber 10' cannot be changed after the protective structure is required to be provided (mainly to stabilize the process environment of the chamber). In addition, the internal pressure of the vacuum chamber 10' needs to be controlled by the opening amplitude of the on-off valve 30' during the process, which requires that the vacuum degree signal and the pumping speed of the molecular pump 20' are in one-to-one correspondence, and cannot be delayed. Furthermore, the replacement of the protective structure is convenient and simple.
A shield window 40 for a semiconductor vacuum apparatus 100 according to an embodiment of the first aspect of the present invention is described below with reference to fig. 1 to 6. It should be noted that, the semiconductor vacuum apparatus 100 may be a physical vapor deposition system (PVD), an ion beam etching system (IBE), a chemical vapor deposition system (CVD), etc., and the vacuum chamber 10 of the semiconductor vacuum apparatus 100 in the embodiment of the present invention adopts a positive pumping mode.
The protection window 40 for the semiconductor vacuum apparatus 100 according to the embodiment of the present invention, wherein the semiconductor vacuum apparatus 100 includes a vacuum chamber 10, a molecular pump 20, an on-off valve 30, and the protection window 40.
Specifically, the vacuum chamber 10 is provided with an air extraction opening 11 (as shown in fig. 2, the top of the vacuum chamber 10 is provided with the air extraction opening 11), the molecular pump 20 is installed at the air extraction opening 11 for extracting air flow in the vacuum chamber, the switch valve 30 is provided between the molecular pump 20 and the air extraction opening 11 for opening or closing the air extraction opening 11, the protection window 40 is provided at the air extraction opening 11 and is located at one side of the switch valve 30 facing the vacuum chamber 10 (as shown in fig. 2, the protection window 40 is located at the lower side of the switch valve 30).
It should be noted that the pumping port 11 on the vacuum chamber 10 may be provided on the top wall of the vacuum chamber 10 or the side wall of the vacuum chamber 10.
Further, the protective window 40 includes a rim 41 and a plurality of blades 42. For example, the shape of the frame 41 is consistent with the shape of the suction opening 11, and may be circular, elliptical or polygonal.
The plurality of blades 42 are uniformly spaced radially outwardly about the center of the rim 41, and it is understood that the spacing between adjacent blades 42 is equal in the radial direction about the center of the rim 41. The two sides of each blade 42 are formed at a predetermined angle α (α angle shown in fig. 4) in an axial section perpendicular to the plane of the protective window 40, and a predetermined overlap region a (shown in fig. 4) corresponding to the predetermined angle is provided between two radially adjacent blades 42.
In this way, by setting the predetermined angle α between the two sides of each vane 42 and matching the predetermined overlap area a between the two adjacent vanes 42, the etching material in the vacuum chamber 10 can be effectively prevented from entering the molecular pump 20, and the gaps between the adjacent vanes 42 can be ensured to be larger, so that the resistance is small when the air flow passes, and the air extraction speed is not affected.
According to the protective window 40 for the semiconductor vacuum apparatus 100 of the embodiment of the present invention, gaps remain between adjacent blades 42 of the protective window 40, which can allow gas molecules to pass through, ensure the pumping speed, and effectively prevent etching products or sputtered materials from entering the molecular pump 20.
According to one embodiment of the present invention, the predetermined angle α may range from 60 ° to 120 °, and may be specifically 60 °, 80 °, 90 °, 100 °, and 120 °. The predetermined overlap area a ranges from 5mm to 30mm.
According to an alternative example of the invention, the axial thickness h of each blade 42 ranges from 30mm to 60mm, and may be in particular 30mm, 40mm, 50mm and 60mm. It will be appreciated that the axial thickness h of each vane 42 is the axial thickness of the protection window 40.
As shown in fig. 4, the predetermined angle α between the two sides of each vane 42 is 90 °, and under the same conditions, the gap between the adjacent vanes 42 can be maximized and the air flow can be smooth, compared with other angles (i.e., other angles between 60 ° and 120 °). The axial thickness h of each vane 42 is 40mm, and the predetermined overlap area a is 5mm to 20mm.
According to another embodiment of the present invention, the plurality of blades 42 in the radial direction are fixedly coupled to the rim 41 by a first fixing shaft 44 and a second fixing shaft 45, respectively, and the first fixing shaft 44 and the second fixing shaft 45 are in a cross shape. As shown in fig. 3, adjacent blades 42 are uniformly arranged by fixing the shafts of the first and second blades 42 perpendicularly intersecting, and specifically, the first and second fixing shafts 44 and 45 may be fixed by relative welding or by using bushings of equal length to equalize the interval distance between the adjacent blades 42.
According to still another embodiment of the present invention, both sides of each vane 42 are symmetrically disposed with the first fixing shaft 44 or the second fixing shaft 45 in an axial section perpendicular to the plane of the protection window 40. In this way, the stable flow of the air flow direction in the vacuum chamber 10 is not changed.
According to another embodiment of the present invention, the surfaces of the plurality of blades 42 and the frame 41 are sandblasted to enhance the roughness of the surface of the protection window 40, so as to ensure the adsorption capability of the deposit on the surface of the protection window 40 without falling off.
Further, the roughness of the surface of the protection window 40 is maintained in a range of 2.0 to 5.0.
Optionally, the material of the protection window 40 may be specifically selected from metal materials such as aluminum, iron, copper, etc. according to the use environment, or may be non-metal materials. For example, stainless steel SUS304 may be selected as an example.
According to still another embodiment of the present invention, the rim 41 is formed in a circular shape, an oval shape, or a polygonal shape. For example, the circular shape of the frame 41 in cooperation with the air extraction opening 11 can ensure the omnidirectional symmetry of the protection window 40, and the air extraction mode is not changed, so that the airflow direction of the chamber is not influenced. The diameter of the frame 41 of the protective window 40 is in the range of(specifically, according to the caliber of the molecular pump 20, as shown in FIG. 3, the present invention is implemented with +.>For example). Alternatively, the thickness of the frame 41 is 1mm by using an L-shaped edge, and the frame 41 may be fixed on the wall surface of the vacuum chamber 10 during installation.
A semiconductor vacuum apparatus 100 according to an embodiment of the present invention includes: the vacuum cavity 10, there is extraction opening 11 on the vacuum cavity 10; a molecular pump 20, the molecular pump 20 being installed at the pumping port 11 for pumping out the air flow in the vacuum chamber; a switching valve 30, the switching valve 30 being provided between the molecular pump 20 and the pumping port 11 to open or close the pumping port 11; according to the protection window 40 for the semiconductor vacuum apparatus 100 in the above-described embodiment, the protection window 40 is provided at the pumping port 11 and is located at the side of the switching valve 30 facing the vacuum chamber 10.
According to an embodiment of the present invention, the protection window 40 includes a plurality of protection windows 40 that are sequentially stacked in the axial direction of the extraction port 11. It will be appreciated that in practical applications, if the molecular pump 20 has high requirements for protection precision of the etching object or the sputtering object, a plurality of protection windows 40 may be stacked at the pumping port 11.
According to one embodiment of the present invention, the protection window 40 has a simple structure, the fixation can be realized by only 4 screws or bayonet locks, and the replacement is very convenient.
According to still another embodiment of the present invention, the semiconductor vacuum apparatus 100 further includes: the dry pump 48, the dry pump 48 is set up outside vaccum lumen 10, connect through the air suction pipeline 47 between molecular pump 20 and the dry pump 48; the slide holder 49 is arranged in the vacuum cavity 10, the slide holder 49 is opposite to the pumping hole 11, and a wafer 50 is placed on the slide holder 49; an ion source 60, the ion source 60 being mounted on one side of the vacuum chamber 10.
According to the semiconductor vacuum apparatus 100 of the embodiment of the present invention, the gaps are reserved between the adjacent blades 42 of the protection window 40, which can allow the gas molecules to pass through, ensure the pumping speed, and effectively prevent the etching products or the sputtering materials from entering the molecular pump 20.
As shown in fig. 2, in the embodiment of the present invention, the on-off valve 30 is a gate valve, and the gate valve is fixed on the top flange of the vacuum chamber 10, so as to isolate the molecular pump 20 from the vacuum chamber 10, and simultaneously control the chamber pressure in the process. The molecular pump 20 is installed on the upper surface of the gate valve, and a positive air suction mode is realized.
It will be appreciated by those skilled in the art that the start-up of the molecular pump 20 must require that its pre-stage be at negative pressure, so that the pre-pump air extraction line 47 of the molecular pump 20 is connected between the molecular pump 20 and the dry pump 48 to achieve the pre-stage negative pressure of the molecular pump 20. The protection window 40 is installed in the pumping hole 11 of the vacuum chamber 10, and the protection window 40 is disposed below the gate valve to prevent etching products or sputtering materials from entering the molecular pump 20.
In a specific embodiment of the present invention, an ion source 60 is installed on a side of the vacuum chamber 10, an air inlet pipe 61 is connected to a side of the ion source 60 far from the vacuum chamber 10 for introducing process gas, an ion grid 70 is disposed on a side of the ion source 60 facing the vacuum chamber 10, and the ion source 60 can excite the ion grid 70 to provide a corresponding electric field for ions. The wafer 50 is placed on a stage 49 or an electrostatic chuck within the vacuum chamber 10. After the ion source 60 excites ions, the ions are neutralized to neutral high velocity particles, which move rapidly in the vacuum chamber 10 in the rightward direction of arrow e, and a portion of the particles strike the surface of the wafer 50, creating etch products that are sputtered away and deposited in the upward directions of arrows m and n.
Further, the etching product and the gas flow simultaneously pass through the protection window 40, and the etching product is solid particles and is deposited on the protection window 40 along the linear motion, and the gas flow is filtered through the protection window and enters the molecular pump 20. The direction of incidence that most easily enters the molecular pump 20 is the arrow direction g, but is blocked by the shield window 40 at the highest deposition area 421 of the sputtered product, and the etching products at the remaining incidence angle are only deposited under this area, so that they cannot enter the molecular pump 20. The gas flow may enter the gaps between adjacent vanes 42 of the protection window 40 in the direction of arrow j and finally enter the molecular pump 20 in the exit direction k of the gas flow. The molecular pump 20 delivers the incoming air flow through the foreline 47 to the dry pump 48 and finally is discharged by the dry pump 48 to the service end.
Each vane 42 is fixed to the rim 41 of the protection window 40 by a first fixing shaft 44 and a second fixing shaft 45, and the rim 41 is fixed in the vacuum chamber 10 by means of four rim positioning holes 46. Specifically, each of the blades 42 is formed in a circumferential shape, and a plurality of blades 42 are overlapped in a radial direction, and a through hole is defined in the blade 42 nearest to the center of the rim 41, and the through hole needs to be blocked by a cover plate 43 to prevent etching products from entering the molecular pump 20 through the through hole. In the description of the present invention, "plurality" means two or more.
In the description of the present specification, reference to the terms "one embodiment," "some embodiments," "illustrative embodiments," "examples," "specific examples," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiments or examples. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
While embodiments of the present invention have been shown and described, it will be understood by those of ordinary skill in the art that: many changes, modifications, substitutions and variations may be made to the embodiments without departing from the spirit and principles of the invention, the scope of which is defined by the claims and their equivalents.
Claims (11)
1. A protective window for a semiconductor vacuum device, the semiconductor vacuum device comprising:
the vacuum cavity is provided with an extraction opening;
the molecular pump is arranged at the air extraction opening and used for extracting air flow in the vacuum chamber;
the switch valve is arranged between the molecular pump and the air extraction opening to open or close the air extraction opening;
the protection window is arranged at the extraction opening and is positioned on one side of the switch valve, facing the vacuum cavity, and comprises a frame and a plurality of blades, wherein the shape of the frame is consistent with that of the extraction opening, the blades are uniformly arranged at intervals along the radial direction outwards by taking the center of the frame as the center, two sides of each blade are at a preset angle alpha on the axial section perpendicular to the plane where the protection window is positioned, and a preset overlapping area a corresponding to the preset angle is arranged between two radially adjacent blades.
2. The protection window for a semiconductor vacuum apparatus according to claim 1, wherein the predetermined angle α ranges from 60 ° to 120 °, and the predetermined overlap region a ranges from 5mm to 30mm.
3. The protection window for a semiconductor vacuum apparatus according to claim 2, wherein the axial thickness h of each of the blades ranges from 30mm to 60mm.
4. The protective window for a semiconductor vacuum apparatus according to claim 1, wherein the plurality of blades in the radial direction are fixedly connected to the frame by a first fixing shaft and a second fixing shaft, respectively, the first fixing shaft and the second fixing shaft being crossed.
5. The shield window for a semiconductor vacuum apparatus according to claim 1, wherein both sides of each of the blades are symmetrically disposed with the first fixed shaft or the second fixed shaft in an axial section perpendicular to a plane in which the shield window is located.
6. The protective window for a semiconductor vacuum apparatus according to claim 1, wherein surfaces of the plurality of blades and the rim are each sandblasted to enhance roughness of the protective window surface.
7. The protective window for a semiconductor vacuum apparatus according to claim 6, wherein a roughness of a surface of the protective window is maintained in a range of 2.0 to 5.0.
8. The protection window for a semiconductor vacuum apparatus according to claim 1, wherein the rim is formed in a circular shape, an elliptical shape, or a polygonal shape.
9. A semiconductor vacuum apparatus, comprising:
the vacuum cavity is provided with an extraction opening;
the molecular pump is arranged at the air extraction opening and used for extracting air flow in the vacuum chamber;
the switch valve is arranged between the molecular pump and the air extraction opening to open or close the air extraction opening;
the protection window for a semiconductor vacuum apparatus according to any one of claims 1 to 8, which is provided at the pumping port and is located at a side of the switching valve facing the vacuum chamber.
10. The semiconductor vacuum apparatus according to claim 9, wherein the shield window includes a plurality of the shield windows, the plurality of the shield windows being sequentially stacked in an axial direction of the pumping port.
11. The semiconductor vacuum apparatus according to claim 9 or 10, further comprising:
the dry pump is arranged outside the vacuum cavity, and the dry pump is connected with the molecular pump through an air exhaust pipeline;
the slide holder is arranged in the vacuum cavity, the slide holder is arranged opposite to the air extraction opening, and a wafer is placed on the slide holder;
and the ion source is arranged on one side of the vacuum cavity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210026128.XA CN116469742A (en) | 2022-01-11 | 2022-01-11 | Protection window for semiconductor vacuum equipment and semiconductor vacuum equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210026128.XA CN116469742A (en) | 2022-01-11 | 2022-01-11 | Protection window for semiconductor vacuum equipment and semiconductor vacuum equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116469742A true CN116469742A (en) | 2023-07-21 |
Family
ID=87175828
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210026128.XA Pending CN116469742A (en) | 2022-01-11 | 2022-01-11 | Protection window for semiconductor vacuum equipment and semiconductor vacuum equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116469742A (en) |
-
2022
- 2022-01-11 CN CN202210026128.XA patent/CN116469742A/en active Pending
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