CN116456609B - Prefilled ceramic copper-clad ceramic insulator circuit board, power device and preparation method - Google Patents
Prefilled ceramic copper-clad ceramic insulator circuit board, power device and preparation method Download PDFInfo
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- CN116456609B CN116456609B CN202310320743.6A CN202310320743A CN116456609B CN 116456609 B CN116456609 B CN 116456609B CN 202310320743 A CN202310320743 A CN 202310320743A CN 116456609 B CN116456609 B CN 116456609B
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- 239000000919 ceramic Substances 0.000 title claims abstract description 136
- 239000012212 insulator Substances 0.000 title claims abstract description 30
- 238000002360 preparation method Methods 0.000 title claims abstract description 10
- 239000000843 powder Substances 0.000 claims abstract description 31
- 238000000034 method Methods 0.000 claims abstract description 22
- 230000008569 process Effects 0.000 claims abstract description 9
- 239000010410 layer Substances 0.000 claims description 69
- 238000010438 heat treatment Methods 0.000 claims description 53
- 229910000679 solder Inorganic materials 0.000 claims description 40
- 238000011049 filling Methods 0.000 claims description 24
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 20
- 229910052802 copper Inorganic materials 0.000 claims description 20
- 239000010949 copper Substances 0.000 claims description 20
- 239000011248 coating agent Substances 0.000 claims description 19
- 238000000576 coating method Methods 0.000 claims description 19
- 229920001187 thermosetting polymer Polymers 0.000 claims description 15
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 14
- 239000002335 surface treatment layer Substances 0.000 claims description 13
- 238000005530 etching Methods 0.000 claims description 11
- 238000001035 drying Methods 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 9
- 238000007747 plating Methods 0.000 claims description 8
- 238000000498 ball milling Methods 0.000 claims description 7
- 238000013035 low temperature curing Methods 0.000 claims description 7
- 238000005219 brazing Methods 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 238000010019 resist printing Methods 0.000 claims description 6
- 238000003466 welding Methods 0.000 claims description 6
- 238000002156 mixing Methods 0.000 claims description 5
- 238000003756 stirring Methods 0.000 claims description 5
- 238000004321 preservation Methods 0.000 claims description 4
- 238000001723 curing Methods 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910052720 vanadium Inorganic materials 0.000 claims description 2
- 239000002131 composite material Substances 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 239000000853 adhesive Substances 0.000 abstract description 2
- 230000001070 adhesive effect Effects 0.000 abstract description 2
- 230000005012 migration Effects 0.000 abstract 1
- 238000013508 migration Methods 0.000 abstract 1
- 239000005022 packaging material Substances 0.000 abstract 1
- 238000012858 packaging process Methods 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 9
- 238000012360 testing method Methods 0.000 description 8
- 239000000758 substrate Substances 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 4
- 239000011888 foil Substances 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000009471 action Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 239000000741 silica gel Substances 0.000 description 3
- 229910002027 silica gel Inorganic materials 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- 239000000945 filler Substances 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229920000620 organic polymer Polymers 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 238000011056 performance test Methods 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 229910001182 Mo alloy Inorganic materials 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- WUUZKBJEUBFVMV-UHFFFAOYSA-N copper molybdenum Chemical compound [Cu].[Mo] WUUZKBJEUBFVMV-UHFFFAOYSA-N 0.000 description 1
- SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical compound [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000000016 photochemical curing Methods 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/10—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on aluminium oxide
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
- C04B35/581—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on aluminium nitride
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
- C04B35/584—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicon nitride
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
- C04B35/62605—Treating the starting powders individually or as mixtures
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0011—Working of insulating substrates or insulating layers
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
- H05K3/188—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by direct electroplating
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/28—Applying non-metallic protective coatings
- H05K3/282—Applying non-metallic protective coatings for inhibiting the corrosion of the circuit, e.g. for preserving the solderability
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P10/00—Technologies related to metal processing
- Y02P10/25—Process efficiency
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing Of Printed Wiring (AREA)
Abstract
The invention relates to the technical field of semiconductors, in particular to a pre-filled ceramic copper-clad ceramic insulator circuit board, a power device and a preparation method thereof. The invention can avoid the problems of porosity, ion migration and the like of the high-power element caused by the fact that the grooves cannot be fully filled by the packaging material due to the existence of the line spacing grooves in the subsequent packaging process. The components PA66 and PA610 in the ceramic powder act as adhesives in the curing process, and finally a compact ceramic insulator closely attached to the side wall and the bottom of the groove is formed; the ceramic powder pre-filled in the invention is solidified at low temperature to form a compact insulator, which can be kept stable under high and low temperature conditions and increase the low and high temperature resistant reliability of the power device.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a pre-filled ceramic copper-clad ceramic insulator circuit board, a power device and a preparation method.
Background
AMB copper-clad ceramic substrate materials are widely used in semiconductor device packaging with high power and high heat dissipation requirements due to their high heat conductivity, high insulation and other characteristics.
CN214672593 discloses a method for realizing a double-sided heat dissipation power device by a lead frame with connecting ribs and connecting blocks, and a method for manufacturing the device, wherein a copper-molybdenum alloy or copper-tungsten alloy material close to the CTE of a chip is adopted as the connecting blocks, so that the thermal stress is reduced, the reliability of a power module is improved, and the lead frame of the connecting blocks, a ceramic substrate and the chip are electrically conducted by precoating sintered materials, so that the process steps and implementation difficulty are reduced. Because the ceramic substrate is provided with the grooves after being prepared by the circuit board, insulating materials such as silica gel and the like cannot completely fill the grooves in the plastic packaging stage, and the void ratio is generated. And the air insulation strength is low, and the hidden trouble of power device failure caused by high-voltage breakdown exists.
CN114340147 discloses a method for realizing the pre-filling of the groove of the ceramic substrate by injecting an insulating material such as silica gel or solder resist ink into the groove of the circuit board by a high-precision dispenser, so as to solve the problem of filling the plastic package material in the groove region of the ceramic substrate in the plastic package stage, but the main component of the filled silica gel substance is organic polymer, which can cope with the common sintering process, and the organic polymer material is easy to be thermally decomposed and fail when the high-temperature (more than 320 ℃) vacuum reflow soldering sintering of the material such as a pre-coating soldering lug is carried out, so that the limitation exists.
In view of the above, the scheme provides a pre-filled ceramic copper-clad ceramic insulator circuit board, a power device and a preparation method.
Disclosure of Invention
The invention aims to provide a pre-filled ceramic copper-clad ceramic insulator circuit board, a power device and a preparation method thereof, so as to solve the problems in the prior art.
In order to solve the technical problems, the invention provides the following technical scheme:
the preparation method of the pre-filled ceramic copper-clad ceramic insulator circuit board comprises the following steps:
s1, coating a solder layer on two sides of a ceramic layer, and then welding a copper sheet on the solder layer to obtain a copper-clad ceramic motherboard;
s2: coating a photosensitive film on one side of the copper-clad ceramic master, exposing by using a film, and removing the photosensitive film in an unexposed area by developing to obtain the copper-clad ceramic master with a circuit pattern formed by the photosensitive film on one side; etching according to the circuit pattern, removing the exposed photosensitive film, and etching the brazing layer until the ceramic layer is exposed to form a copper-clad ceramic circuit board with a circuit groove on one side;
s3: filling the circuit groove with ceramic powder, and curing at low temperature to obtain a powder filling layer; and removing redundant ceramic powder on the pattern circuit by using laser, performing solder resist printing on two sides of the copper-clad ceramic motherboard to form a solder resist layer, and plating a metal coating on the surface to form a surface treatment layer to obtain the pre-filled ceramic copper-clad ceramic insulator circuit board.
Further, in the step S3, the preparation method of the ceramic powder includes the following steps:
al is added with 2 O 3 Performing high-temperature treatment, adding into a ball mill, ball milling, and drying for later use; heating PA66 and PA610 after low-temperature treatment, and then physically crushing to obtain mixed thermosetting plastic; drying Al 2 O 3 And mixing and stirring uniformly with the mixed thermosetting plastic to obtain ceramic powder.
Further, the ceramic powder comprises the following components in percentage by mass: 70-80% Al 2 O 3 ，15-25%PA66，5-10%PA610。
Further, in the step S3, the filling depth of the ceramic powder is more than or equal to 70% of the line groove.
Further, the high-temperature treatment process is to heat to 1500-1575 ℃ at a heating rate of 30-35 ℃/h; the low-temperature treatment process is to heat to 120 ℃ at a heating rate of 7-8 ℃/h and then to heat to 300 ℃ at a heating rate of 18-20 ℃/h; ball milling Al 2 O 3 、SiO 2 And MgO has a fineness of 250-300 meshes; the fineness of the mixed thermosetting plastic after physical crushing is 250-300 meshes.
Further, in the step S3, the low-temperature curing step is to heat to 150 ℃ at a heating rate of 2.5 ℃/h, keep the temperature for 20h, heat to 180 ℃ at a heating rate of 0.75 ℃/h, keep the temperature for 20h, and heat to 200 ℃ at a heating rate of 1 ℃/h, and keep the temperature for 20h.
Further, the ceramic layer is Si 3 N 4 AlN and Al 2 O 3 One or more of them has a thickness of 0.1-1.0mm.
Further, the solder layer is one or more of Ti, zr, hf, cr, V, al and has a thickness of 0.001-0.020mm.
Further, the copper sheet is oxygen-free copper, and the thickness is 0.2-1.4mm; the solder mask layer is solder mask ink, and the thickness is 5-50 mu m; the surface treatment layer is one or more of Au, ag and Ni; wherein, the plating thickness of different materials is: ni 2-9 μm, au0.01-0.2 μm, ag0.1-0.6 μm.
Compared with the prior art, the invention has the following beneficial effects:
(1) The components PA66 and PA610 of the pre-filled ceramic powder serve as adhesives during low-temperature curing, and finally, a compact ceramic insulator closely attached to the side wall and the bottom of the groove is formed, so that the characteristics of the 3D ceramic substrate are visually formed in the pre-filled area; in addition, the filled ceramic insulator can be filled with the height difference, so that the process limitation of incomplete curing or repeated filling of the existing photo-curing insulating resin filler does not exist, and the method is simpler and more convenient to implement than the existing scheme;
(2) The compact insulator formed by low-temperature curing the pre-filled ceramic powder can be stable under the conditions of high temperature of 340 ℃ and 300sec, -65 ℃ to 150 ℃ and high and low temperature, and can resist 3000Cycles, thereby meeting the requirement of downstream high-temperature sintering.
Drawings
The accompanying drawings are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate the invention and together with the embodiments of the invention, serve to explain the invention. In the drawings:
FIG. 1 is a schematic diagram of a circuit board structure of a pre-filled ceramic copper-clad ceramic insulator of the present invention;
FIG. 2 is a schematic diagram of the filled region of a pre-filled ceramic copper-clad ceramic insulator circuit board prepared in comparative example 1 of the present invention;
FIG. 3 is a schematic diagram of the filled region of a pre-filled ceramic copper-clad ceramic insulator circuit board prepared in example 1 of the present invention;
in the figure: 1, a ceramic layer; 2, a solder layer; 3, copper sheets; 4, a surface treatment layer; 5 powder filling layer.
Description of the embodiments
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Examples
S1: 70g Al 2 O 3 Heating to 1560 ℃ at a heating rate of 35 ℃/h for high-temperature treatment, adding water and materials into a ball mill for ball milling, and drying for 2h at 120 ℃ for later use; heating 20gPA and 10gPA610 to 120 ℃ at a heating rate of 7 ℃/h, heating to 30 ℃ at a heating rate of 18 ℃/h for low-temperature treatment, heating the PA6 and the PA610 subjected to low-temperature treatment in a water bath for 5h by using water vapor, and then physically crushing to obtain mixed thermosetting plastic; drying Al 2 O 3 Mixing with the mixed thermosetting plastic and stirring uniformly to obtain ceramic powder;
s2, coating a solder layer 2 on two sides of the ceramic layer 1, and then welding a copper sheet 3 on the solder layer 2 to obtain a copper-clad ceramic mother board; wherein the ceramic layer is AlN with the thickness of 0.32 mm; the copper sheet is oxygen-free copper with the thickness of 0.4 mm; ti foil with solder layer of 0.005 mm;
s3: coating a photosensitive film on one side of the copper-clad ceramic master, exposing by using a film, and removing the photosensitive film in an unexposed area by developing to obtain the copper-clad ceramic master with a circuit pattern formed by the photosensitive film on one side; etching according to the circuit pattern, removing the exposed photosensitive film, and etching the brazing layer until the ceramic layer 1 is exposed, thereby forming a copper-clad ceramic circuit board with a circuit groove on one side;
s4: filling the line groove with ceramic powder, wherein the filling depth is 80% of the line groove, heating to 150 ℃ at the heating rate of 2.5 ℃/h, preserving heat for 20h, heating to 180 ℃ at the heating rate of 0.75 ℃/h, preserving heat for 20h, heating to 200 ℃ at the heating rate of 1 ℃/h, and preserving heat for 20h for low-temperature curing to obtain a powder filling layer 5; removing ceramic powder on the pattern circuit by using laser, performing solder resist printing on two sides of a copper-clad ceramic motherboard to form a solder resist layer, and plating a metal coating on the surface to form a surface treatment layer 4 to obtain a pre-filled ceramic copper-clad ceramic insulator circuit board; wherein the thickness of the solder mask layer is 0.02mm; the surface treatment layer was an Au layer of 0.2. Mu.m.
Examples
S1: 75g Al 2 O 3 Heating to 1560 ℃ at a heating rate of 35 ℃/h for high-temperature treatment, adding water and materials into a ball mill for ball milling, and drying for 2h at 120 ℃ for later use; heating 15gPA and 10gPA610 to 120 ℃ at a heating rate of 7 ℃/h, heating to 30 ℃ at a heating rate of 18 ℃/h for low-temperature treatment, heating the PA6 and the PA610 subjected to low-temperature treatment in a water bath for 5h by using water vapor, and then physically crushing to obtain mixed thermosetting plastic; drying Al 2 O 3 Mixing with the mixed thermosetting plastic and stirring uniformly to obtain ceramic powder;
s2, coating a solder layer 2 on two sides of the ceramic layer 1, and then welding a copper sheet 3 on the solder layer 2 to obtain a copper-clad ceramic mother board; wherein the ceramic layer is AlN with the thickness of 0.32 mm; the copper sheet is oxygen-free copper with the thickness of 0.4 mm; ti foil with solder layer of 0.005 mm;
s3: coating a photosensitive film on one side of the copper-clad ceramic master, exposing by using a film, and removing the photosensitive film in an unexposed area by developing to obtain the copper-clad ceramic master with a circuit pattern formed by the photosensitive film on one side; etching according to the circuit pattern, removing the exposed photosensitive film, and etching the brazing layer until the ceramic layer is exposed to form a copper-clad ceramic circuit board with a circuit groove on one side;
s4: filling the line groove with ceramic powder, wherein the filling depth is 80% of the line groove, heating to 150 ℃ at the heating rate of 2.5 ℃/h, preserving heat for 20h, heating to 180 ℃ at the heating rate of 0.75 ℃/h, preserving heat for 20h, heating to 200 ℃ at the heating rate of 1 ℃/h, and preserving heat for 20h for low-temperature curing to obtain a powder filling layer 5; removing ceramic powder on the pattern circuit by using laser, performing solder resist printing on two sides of a copper-clad ceramic motherboard to form a solder resist layer, and plating a metal coating on the surface to form a surface treatment layer 4 to obtain a pre-filled ceramic copper-clad ceramic insulator circuit board; wherein the thickness of the solder mask layer is 0.02mm; the surface treatment layer was an Au layer of 0.2. Mu.m.
Examples
S1: 80g of Al 2 O 3 Heating to 1560 ℃ at a heating rate of 35 ℃/h for high-temperature treatment, adding water and materials into a ball mill for ball milling, and drying for 2h at 120 ℃ for later use; heating 15gPA and 5gPA610 to 120 ℃ at a heating rate of 7 ℃/h, heating to 30 ℃ at a heating rate of 18 ℃/h for low-temperature treatment, heating the PA6 and the PA610 subjected to low-temperature treatment in a water bath for 5h by using water vapor, and then physically crushing to obtain mixed thermosetting plastic; drying Al 2 O 3 Mixing with mixed thermosetting plastic, and stirring to obtain ceramic powder
S2, coating a solder layer 2 on two sides of the ceramic layer 1, and then welding a copper sheet 3 on the solder layer 2 to obtain a copper-clad ceramic mother board; wherein the ceramic layer is AlN with the thickness of 0.32 mm; the copper sheet is oxygen-free copper with the thickness of 0.4 mm; ti foil with solder layer of 0.005 mm;
s3: coating a photosensitive film on one side of the copper-clad ceramic master, exposing by using a film, and removing the photosensitive film in an unexposed area by developing to obtain the copper-clad ceramic master with a circuit pattern formed by the photosensitive film on one side; etching according to the circuit pattern, removing the cured photosensitive film, and etching the brazing layer until the ceramic layer is exposed to form a copper-clad ceramic circuit board with a circuit groove on one side;
s4: filling the line groove with ceramic powder, wherein the filling depth is 80% of the line groove, heating to 150 ℃ at the heating rate of 2.5 ℃/h, preserving heat for 20h, heating to 180 ℃ at the heating rate of 0.75 ℃/h, preserving heat for 20h, heating to 200 ℃ at the heating rate of 1 ℃/h, and preserving heat for 20h for low-temperature curing to obtain a powder filling layer 5; removing ceramic powder on the pattern circuit by using laser, performing solder resist printing on two sides of a copper-clad ceramic motherboard to form a solder resist layer, and plating a metal coating on the surface to form a surface treatment layer 4 to obtain a pre-filled ceramic copper-clad ceramic insulator circuit board; wherein the thickness of the solder mask layer is 0.02mm; the surface treatment layer was an Au layer of 0.2. Mu.m.
Comparative example 1
S1, coating a solder layer on two sides of a ceramic layer, and then welding a copper sheet on the solder layer to obtain a copper-clad ceramic motherboard; wherein the ceramic layer is AlN with the thickness of 0.32 mm; the copper sheet is oxygen-free copper with the thickness of 0.4 mm; ti foil with solder layer of 0.005 mm;
s2: coating a photosensitive film on one side of the copper-clad ceramic master, exposing by using a film, and removing the photosensitive film in an unexposed area by developing to obtain the copper-clad ceramic master with a circuit pattern formed by the photosensitive film on one side; copper etching is carried out according to the circuit pattern, the exposed photosensitive film is removed, and then the brazing layer is etched until the ceramic layer is exposed, so that a copper-clad ceramic circuit board with a circuit groove on one side is formed;
s3: and precisely identifying and positioning the pattern surface of the copper-clad ceramic motherboard by using a high-precision dispensing machine, and injecting thermosetting resin into the etched groove through an injection cylinder to form a pre-filling layer. The volume of the insulating glue in the groove accounts for 80% of the total volume of the groove, the heat preservation temperature of the injection cylinder is 80 ℃, the pressure of the injection cylinder is 0.4Mpa, and the height of the spray head is 5mm; removing thermosetting resin on the pattern circuit by using laser, performing solder resist printing on two sides of the copper-clad ceramic motherboard to form a solder resist layer, and plating a metal coating on the surface to form a surface treatment layer to obtain the pre-filled ceramic copper-clad ceramic insulator circuit board; wherein the thickness of the solder mask layer is 0.02mm; the surface treatment layer was an Au layer of 0.2. Mu.m.
And (3) testing: taking the pre-filled ceramic copper-clad ceramic insulator circuit board prepared in the example 1 and the pre-filled ceramic copper-clad ceramic insulator circuit board prepared in the comparative example 1, and performing the following performance test on the filling areas of the two circuit boards;
withstand voltage test was performed according to IPC-TM-650.2.5.7;
conducting heat conduction test according to GB/T39862-2021;
heat resistance test according to IPC-TM-650.2.6.8;
high temperature storage test was performed according to JISD22-A103 HTSL Ceramic Packaged Parts;
performing cold and hot impact performance test according to MIL-STD-883E;
the test data are shown in the following table;
the appearance of the filled layer after the test was observed with a 100X microscope is shown in the following figure.
Conclusion: as shown in the following figures, fig. 2 is the appearance of the filling area of comparative example 1, and fig. 3 is the appearance of the filling area of example 1; as can be seen from test data, the filling layer prepared by using the ceramic powder as the filler has the advantages of high voltage resistance, high heat conductivity, high heat resistance and high-temperature storage compared with the common thermosetting resin.
It is noted that relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus.
Finally, it should be noted that: the foregoing description is only a preferred embodiment of the present invention, and the present invention is not limited thereto, but it is to be understood that modifications and equivalents of some of the technical features described in the foregoing embodiments may be made by those skilled in the art, although the present invention has been described in detail with reference to the foregoing embodiments. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (7)
1. The preparation method of the pre-filled ceramic copper-clad ceramic insulator circuit board is characterized by comprising the following steps of:
s1, coating a solder layer (2) on two sides of a ceramic layer (1), and then welding a copper sheet (3) on the solder layer (2) to obtain a copper-clad ceramic mother board;
s2: coating a photosensitive film on one side of the copper-clad ceramic master, exposing by using a film, and removing the photosensitive film in an unexposed area by developing to obtain the copper-clad ceramic master with a circuit pattern formed by the photosensitive film on one side; etching according to the circuit pattern, removing the exposed photosensitive film, and etching the brazing layer until the ceramic layer (1) is exposed, thereby forming a copper-clad ceramic circuit board with a circuit groove on one side;
s3: filling the line grooves with ceramic powder, and curing at a low temperature to obtain a powder filling layer (5); removing excessive ceramic powder on the pattern circuit by using laser, performing solder resist printing on two sides of a copper-clad ceramic motherboard to form a solder resist layer, and plating a metal coating on the surface to form a surface treatment layer (4) to obtain a pre-filled ceramic copper-clad ceramic insulator circuit board;
in step S3, the preparation method of the ceramic powder includes the following steps:
al is added with 2 O 3 Performing high-temperature treatment, adding into a ball mill, ball milling, and drying for later use; heating PA66 and PA610 after low-temperature treatment, and then physically crushing to obtain mixed thermosetting plastic; drying Al 2 O 3 Mixing with the mixed thermosetting plastic and stirring uniformly to obtain ceramic powder;
the high temperature treatment process is to heat to 1500-1575 ℃ at a heating rate of 30-35 ℃/h; the low-temperature treatment process is to heat to 120 ℃ at a heating rate of 7-8 ℃/h and then to heat to 300 ℃ at a heating rate of 18-20 ℃/h;
in the step S3, the filling depth of the ceramic powder is more than or equal to 70% of the line groove;
in the step S3, the low-temperature curing step is to heat to 150 ℃ at a heating rate of 2.5 ℃/h, heat preservation for 20h, heat to 180 ℃ at a heating rate of 0.75 ℃/h, heat preservation for 20h, and heat to 200 ℃ at a heating rate of 1 ℃/h, and heat preservation for 20h.
2. The method for manufacturing a pre-filled ceramic copper-clad ceramic insulator circuit board according to claim 1, wherein: in ceramic powderThe composite material comprises the following components in percentage by mass: 70-80% Al 2 O 3 ，15-25%PA66，5-10%PA610。
3. The method for manufacturing a pre-filled ceramic copper-clad ceramic insulator circuit board according to claim 1, wherein: ball milling Al 2 O 3 、SiO 2 And MgO has a fineness of 250-300 meshes; the fineness of the mixed thermosetting plastic after physical crushing is 250-300 meshes.
4. The method for manufacturing a pre-filled ceramic copper-clad ceramic insulator circuit board according to claim 1, wherein: the ceramic layer (1) is Si 3 N 4 AlN and Al 2 O 3 One or more of them has a thickness of 0.1-1.0mm.
5. The method for manufacturing a pre-filled ceramic copper-clad ceramic insulator circuit board according to claim 1, wherein: the solder layer (2) is one or more of Ti, zr, hf, cr, V, al and has a thickness of 0.001-0.020mm.
6. The method for manufacturing a pre-filled ceramic copper-clad ceramic insulator circuit board according to claim 1, wherein: the copper sheet (3) is oxygen-free copper, and the thickness is 0.2-1.4mm; the solder mask layer is solder mask ink, and the thickness is 5-50 mu m; the surface treatment layer (4) is one or more of Au, ag and Ni; wherein, the plating thickness of different materials is: ni 2-9 μm, au0.01-0.2 μm, ag0.1-0.6 μm.
7. The use of the circuit board prepared by the method for preparing a pre-filled ceramic copper-clad ceramic insulator circuit board according to any one of claims 1 to 6, wherein: the circuit board is used for preparing a power device.
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