CN116455350A - Surface acoustic wave device with transverse clutter suppression function - Google Patents
Surface acoustic wave device with transverse clutter suppression function Download PDFInfo
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- CN116455350A CN116455350A CN202310455755.XA CN202310455755A CN116455350A CN 116455350 A CN116455350 A CN 116455350A CN 202310455755 A CN202310455755 A CN 202310455755A CN 116455350 A CN116455350 A CN 116455350A
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- 238000010897 surface acoustic wave method Methods 0.000 title claims abstract description 66
- 230000001629 suppression Effects 0.000 title claims abstract description 24
- 239000000725 suspension Substances 0.000 claims abstract description 90
- 238000005339 levitation Methods 0.000 claims 20
- 230000000694 effects Effects 0.000 abstract description 3
- 230000002401 inhibitory effect Effects 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 31
- 239000000758 substrate Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 238000013461 design Methods 0.000 description 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910052746 lanthanum Inorganic materials 0.000 description 4
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
- 229910010271 silicon carbide Inorganic materials 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- 238000010295 mobile communication Methods 0.000 description 3
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- JRBRVDCKNXZZGH-UHFFFAOYSA-N alumane;copper Chemical compound [AlH3].[Cu] JRBRVDCKNXZZGH-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- PSHMSSXLYVAENJ-UHFFFAOYSA-N dilithium;[oxido(oxoboranyloxy)boranyl]oxy-oxoboranyloxyborinate Chemical compound [Li+].[Li+].O=BOB([O-])OB([O-])OB=O PSHMSSXLYVAENJ-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
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Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02818—Means for compensation or elimination of undesirable effects
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02637—Details concerning reflective or coupling arrays
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
- H03H9/14502—Surface acoustic wave [SAW] transducers for a particular purpose
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
The invention discloses a surface acoustic wave device with a transverse clutter suppression function, which comprises a busbar, a finger assembly and a suspension block assembly, wherein the finger assembly comprises a plurality of fingers uniformly arranged along the axial direction, the suspension block assembly comprises a plurality of suspension block components, the suspension block components are in one-to-one correspondence with the fingers, the suspension block components are positioned between the corresponding fingers and the busbar, and gaps are reserved between the suspension block components and the corresponding fingers and the busbar. According to the scheme, the scattering of the surface acoustic wave in the aperture direction is reduced by means of binding the surface acoustic wave energy in the central area of the surface acoustic wave device, so that the effect of inhibiting the transverse clutter mode is achieved, and the performance of the surface acoustic wave device is improved.
Description
Technical Field
The invention relates to the technical field of surface acoustic wave devices, in particular to a surface acoustic wave device with a transverse clutter suppression function.
Background
The surface acoustic wave filter is a filter device prepared by utilizing an electro-acoustic conversion technology, can realize high frequency, has adjustable frequency and low loss, has flexible design and mature manufacturing process, and is widely applied to the fields of traffic, medical detection, mobile communication and the like.
Along with the continuous expansion of the 5G communication system, the demand and the value of mobile terminal equipment manufacturers for the radio frequency front end chip are greatly increased, and especially the demand for the filter is most obvious. While 5G brings wide market prospects to the filter industry, it also puts more stringent requirements on the performance of the filter, especially lower insertion loss and smaller in-band fluctuations. The surface acoustic wave filter is prepared by adopting a mature MEMS technology, integrates miniaturization, low loss and high out-of-band suppression, and is still the main stream of the radio frequency front-end filter at present.
However, when the surface acoustic wave device propagates in the piezoelectric material, a certain energy flow angle is often present in the acoustic wave, so that scattering exists in the aperture direction of the surface acoustic wave, and transverse clutters exist in the passband range or near the passband of the surface acoustic wave device, so that performances such as passband flatness and insertion loss of the surface acoustic wave device are deteriorated.
Disclosure of Invention
Aiming at the defects existing in the prior art, the invention aims to solve the technical problems that: how to provide a surface acoustic wave device with a transverse clutter suppression function, which can reduce the scattering of the surface acoustic wave in the aperture direction, further suppress the transverse clutter mode and improve the performance of the surface acoustic wave device.
In order to solve the technical problems, the invention adopts the following technical scheme:
the surface acoustic wave device with the transverse clutter suppression function comprises a busbar and a finger assembly, and further comprises a suspension block assembly, wherein the finger assembly comprises a plurality of fingers uniformly arranged along the axial direction, the suspension block assembly comprises a plurality of suspension block components, the suspension block components are in one-to-one correspondence with the fingers, the suspension block components are positioned between the corresponding fingers and the busbar, and gaps are reserved between the suspension block components and the corresponding fingers and between the busbars.
Preferably, the suspension block part comprises a suspension block, the distance from the suspension block to the busbar is larger than or equal to a first set value and smaller than or equal to a second set value, and the distance from the suspension block to the finger bar is larger than or equal to the first set value and smaller than or equal to the second set value.
Preferably, the suspension block component comprises a plurality of suspension blocks, the suspension blocks are uniformly arranged vertically, the distance from the uppermost suspension block to the busbar is greater than or equal to a first set value and less than or equal to a second set value, the distance from the lowermost suspension block to the finger strip is greater than or equal to the first set value and less than or equal to the second set value, and the distance between two adjacent suspension blocks is greater than or equal to the first set value and less than or equal to the second set value.
Preferably, the first set value is 50nm, and the second set value is 100 times of line width.
Preferably, two adjacent finger strips are arranged in pairs, and two finger strips in the same group have the lower side extending downwards to be connected with the bus bar and the upper side extending upwards to be connected with the bus bar.
The surface acoustic wave device with the transverse clutter suppression function comprises a busbar, a false finger and a finger assembly, and further comprises a suspension block assembly, wherein the finger assembly comprises a plurality of fingers uniformly arranged along the axial direction, the suspension block assembly comprises a plurality of suspension block components, the suspension block components are in one-to-one correspondence with the fingers, the suspension block components are positioned between the corresponding fingers and the false finger, and gaps are reserved between the suspension block components and the corresponding fingers and the false finger.
Preferably, the suspension block component comprises a suspension block, the distance from the suspension block to the false finger is larger than or equal to a first set value and smaller than or equal to a second set value, and the distance from the suspension block to the finger strip is larger than or equal to the first set value and smaller than or equal to the second set value.
Preferably, the suspension block component comprises a plurality of suspension blocks, the suspension blocks are uniformly arranged vertically, the distance from the uppermost suspension block to the false finger is greater than or equal to a first set value and less than or equal to a second set value, the distance from the lowermost suspension block to the finger strip is greater than or equal to the first set value and less than or equal to the second set value, and the distance between two adjacent suspension blocks is greater than or equal to the first set value and less than or equal to the second set value.
Preferably, the first set value is 50nm, and the second set value is 100 times of the finger width.
Preferably, two adjacent finger strips are arranged in pairs, and two finger strips in the same group have the lower side extending downwards to be connected with the bus bar and the upper side extending upwards to be connected with the bus bar.
Compared with the prior art, the invention has the following advantages:
1. according to the invention, the single or a plurality of metal suspension blocks are arranged in the aperture direction, so that the sound propagation speed of the tips of the interdigital electrode fingers can be reduced, and the energy of the surface acoustic wave is restrained in the central area of the surface acoustic wave device; and secondly, a single or a plurality of metal suspension blocks are adopted, so that the surface acoustic wave reflection can be enhanced, and the surface acoustic wave energy is favorably bound to the central area of the surface acoustic wave resonator. Therefore, the method reduces the scattering of the surface acoustic wave in the aperture direction by binding the energy of the surface acoustic wave in the central area of the surface acoustic wave device, thereby achieving the effect of inhibiting the transverse clutter mode and improving the performance of the surface acoustic wave device.
2. The artificial finger in the scheme can be regarded as a short circuit or an open circuit metal block, and the design of the artificial finger can also reduce the sound propagation speed of the tip of the limb, and the sound surface wave energy is bound to the central area of the sound surface wave resonator; meanwhile, the surface acoustic wave reflection can be enhanced, and the surface acoustic wave resonator central area can be bound with the surface acoustic wave energy.
3. According to the scheme, through the optimal design of the bus, the false finger, the gap and the finger strip component, the suspension block component is arranged at the same time, and the high Q value (quality factor) sound wave mode can be excited while the parasitic of clutter modes of various orders is restrained. Therefore, the low-loss, passband high-flatness and other performances of the surface acoustic wave device are facilitated to be realized, the requirements of terminals such as high-speed mobile communication on the high-performance surface acoustic wave device are met, and the preparation process used by the structure is easy to realize and easy to popularize on a large scale.
Drawings
Fig. 1 is a schematic structural diagram of a surface acoustic wave device with a transverse clutter suppression function according to a first embodiment of the present invention;
fig. 2 is a schematic structural diagram of a surface acoustic wave device with a transverse clutter suppression function in the second embodiment of the present invention;
fig. 3 is a schematic structural diagram of a surface acoustic wave device with a transverse clutter suppression function in the third embodiment of the present invention;
fig. 4 is a schematic structural diagram of a surface acoustic wave device with a transverse clutter suppression function in the fourth embodiment of the present invention.
Reference numerals illustrate: bus bar 1, suspending block 2, finger 3 and artificial finger 4.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention more clear, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present invention. It will be apparent that the described embodiments are some, but not all, embodiments of the invention. All other embodiments, which can be made by a person skilled in the art without creative efforts, based on the described embodiments of the present invention fall within the protection scope of the present invention. Unless defined otherwise, technical or scientific terms used herein should be given the ordinary meaning as understood by one of ordinary skill in the art to which this invention belongs.
The terms "first," "second," and the like in the description and in the claims, are not used for any order, quantity, or importance, but are used for distinguishing between different elements. Also, unless the context clearly indicates otherwise, singular forms "a," "an," or "the" and similar terms do not denote a limitation of quantity, but rather denote the presence of at least one. The terms "comprises," "comprising," or the like are intended to cover a feature, integer, step, operation, element, and/or component recited as being present in the element or article that "comprises" or "comprising" does not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. "up", "down", "left", "right" and the like are used only to indicate a relative positional relationship, and when the absolute position of the object to be described is changed, the relative positional relationship may be changed accordingly.
Embodiment one:
as shown in fig. 1, the surface acoustic wave device with a transverse clutter suppression function in this embodiment mainly optimizes the structure of electrode finger layers, and includes a busbar 1 and a finger assembly, and further includes a suspension block assembly, where the finger assembly includes a plurality of fingers 3 uniformly arranged along an axial direction, the suspension block assembly includes a plurality of suspension block 2 components, the suspension block components are in one-to-one correspondence with the fingers 3, the suspension block components are located between the corresponding fingers 3 and the busbar 1, and gaps are formed between the suspension block components and the corresponding fingers 3 and the busbar 1.
In this embodiment, the suspension block member includes one suspension block 2, and a distance w1 from the suspension block 2 to the busbar 1 is equal to or greater than a first set value and equal to or less than a second set value, and a distance w2 from the suspension block 2 to the finger 3 is equal to or greater than the first set value and equal to or less than the second set value.
In this embodiment, the first set point is 50nm, and the second set point is 100 times the finger width of the interdigital electrode.
In this embodiment, two adjacent fingers 3 are arranged in pairs, and two fingers 3 in the same pair have a lower side extending downward to meet the busbar 1 and an upper side extending upward to meet the busbar 1.
The surface acoustic wave device generally further comprises a substrate layer and a piezoelectric layer, wherein the electrode finger layer comprises a busbar 1 and a finger assembly, the electrode finger layer is positioned on the piezoelectric layer, the suspension block assembly is also positioned on the piezoelectric layer, the piezoelectric layer adopts a single-layer or multi-layer structure, the piezoelectric layer is positioned on the substrate layer, and the substrate layer adopts a cavity structure and can also adopt a single-layer or multi-layer structure.
The electrode finger strip layer is an interdigital electrode and is made of at least one of the following materials: aluminum Al, copper Cu, gold Au, platinum Pt and copper aluminum alloy.
The piezoelectric layer is made of at least one of the following materials: lithium niobate LiNbO 3 Lithium tantalate LiTaO 3 Quartz, lithium tetraborate, lanthanum gallium silicate, lanthanum gallium niobate.
The substrate layer is made of at least one of the following materials: silicon Si, sapphire, silicon carbide SiC, diamond, spinel.
Embodiment two:
as shown in fig. 2, the difference from the first embodiment is that in the present embodiment, the suspension block member includes a plurality of suspension blocks 2, the plurality of suspension blocks 2 are uniformly arranged vertically, and the distance w1 from the uppermost suspension block 2 to the busbar 1 is equal to or greater than a first set value and equal to or less than a second set value, the distance w2 from the lowermost suspension block 2 to the finger 3 is equal to or greater than a first set value and equal to or less than a second set value, and the distance between two adjacent suspension blocks 2 is equal to or greater than the first set value and equal to or less than the second set value.
Embodiment III:
as shown in fig. 3, the surface acoustic wave device with the transverse clutter suppression function in the present embodiment includes a busbar 1, a dummy finger 4, and a finger assembly, and further includes a suspension block assembly including a plurality of fingers 3 uniformly arranged along an axial direction, the suspension block assembly includes a plurality of suspension block components, the suspension block components are in one-to-one correspondence with the fingers 3, the suspension block components are located between the corresponding fingers 3 and the dummy finger 4, and gaps are provided between the suspension block components and the corresponding fingers 3 and the dummy finger 4.
In this embodiment, the suspension block component includes a suspension block 2, where a distance w1 from the suspension block 2 to the finger 4 is greater than or equal to a first set value and less than or equal to a second set value, and a distance w2 from the suspension block 2 to the finger 3 is greater than or equal to the first set value and less than or equal to the second set value.
In this embodiment, the first set value is 50nm, and the second set value is 100 times the line width.
In this embodiment, two adjacent fingers 3 are arranged in pairs, and two fingers 3 in the same pair have a lower side extending downward to meet the busbar 1 and an upper side extending upward to meet the busbar 1.
The surface acoustic wave device generally further comprises a substrate layer and a piezoelectric layer, wherein the electrode finger strip layer comprises a busbar 1, a false finger 4 and a finger strip component, the electrode finger strip layer is positioned on the piezoelectric layer, the suspension block component is also positioned on the piezoelectric layer, the piezoelectric layer is in a single-layer or multi-layer structure, the piezoelectric layer is positioned on the substrate layer, and the substrate layer adopts a cavity type structure and can also adopt a single-layer or multi-layer structure.
The electrode finger strip layer is an interdigital electrode and is made of at least one of the following materials: aluminum Al, copper Cu, gold Au, platinum Pt and copper aluminum alloy.
The piezoelectric layer is made of at least one of the following materials: lithium niobate LiNbO 3 Lithium tantalate LiTaO 3 Quartz, lithium tetraborate, lanthanum gallium silicate, lanthanum gallium niobate.
The substrate layer is made of at least one of the following materials: silicon Si, sapphire, silicon carbide SiC, diamond, spinel.
Embodiment four:
as shown in fig. 4, the difference from the third embodiment is that in the present embodiment, the suspension block member includes a plurality of suspension blocks 2, the plurality of suspension blocks 2 are uniformly arranged vertically, and the distance w1 from the uppermost suspension block 2 to the dummy finger 4 is equal to or greater than a first set value and equal to or less than a second set value, the distance w2 from the lowermost suspension block 2 to the finger 3 is equal to or greater than a first set value and equal to or less than a second set value, and the distance between two adjacent suspension blocks 2 is equal to or greater than the first set value and equal to or less than the second set value.
Compared with the prior art, the invention has the advantages that the single or a plurality of metal suspension blocks 2 are arranged in the aperture direction, firstly, the sound propagation speed of the tips of the interdigital electrode fingers can be reduced, and the energy of the surface acoustic wave is restrained in the central area of the surface acoustic wave device; and secondly, the single or multiple metal suspension blocks 2 are adopted, so that the surface acoustic wave reflection can be enhanced, and the surface acoustic wave energy can be bound to the central area of the surface acoustic wave resonator. Therefore, the method reduces the scattering of the surface acoustic wave in the aperture direction by binding the energy of the surface acoustic wave in the central area of the surface acoustic wave device, thereby achieving the effect of inhibiting the transverse clutter mode and improving the performance of the surface acoustic wave device. The artificial finger 4 in the scheme can be regarded as a short circuit or an open circuit metal block, and the design of the artificial finger 4 can also reduce the sound propagation speed of the limb terminal and restrict the sound surface wave energy to the central area of the sound surface wave resonator; meanwhile, the surface acoustic wave reflection can be enhanced, and the surface acoustic wave resonator central area can be bound with the surface acoustic wave energy. According to the scheme, through the optimal design of the busbar 1, the false finger 4, the gap and the finger strip component, the suspension block component is arranged at the same time, and the high Q value (quality factor) sound wave mode can be excited while the parasitic of clutter modes of various orders is restrained. Therefore, the low-loss, passband high-flatness and other performances of the surface acoustic wave device are facilitated to be realized, the requirements of terminals such as high-speed mobile communication on the high-performance surface acoustic wave device are met, and the preparation process used by the structure is easy to realize and easy to popularize on a large scale.
Finally, it should be noted that the above embodiments are only for illustrating the technical solution of the present invention and not for limiting the technical solution, and those skilled in the art should understand that modifications and equivalents may be made to the technical solution of the present invention without departing from the spirit and scope of the present invention, and all such modifications and equivalents are included in the scope of the claims.
Claims (10)
1. The surface acoustic wave device with the transverse clutter suppression function comprises a busbar and a finger assembly, and is characterized by further comprising a suspension block assembly, wherein the finger assembly comprises a plurality of fingers uniformly arranged along the axial direction, the suspension block assembly comprises a plurality of suspension block components, the suspension block components are in one-to-one correspondence with the fingers, the suspension block components are positioned between the corresponding fingers and the busbar, and gaps are reserved between the suspension block components and the corresponding fingers and between the busbars.
2. The surface acoustic wave device with a lateral clutter suppression function according to claim 1, wherein the levitation block section includes one levitation block, a distance from the levitation block to the bus is equal to or greater than a first set value and equal to or less than a second set value, and a distance from the levitation block to the finger is equal to or greater than the first set value and equal to or less than the second set value.
3. The surface acoustic wave device with a horizontal clutter suppression function according to claim 1, wherein the levitation block part includes a plurality of levitation blocks, the plurality of levitation blocks are arranged vertically and uniformly, and a distance from an uppermost levitation block to the busbar is equal to or greater than a first set value and equal to or less than a second set value, a distance from a lowermost levitation block to the finger is equal to or greater than a first set value and equal to or less than a second set value, and a distance between adjacent levitation blocks is equal to or greater than a first set value and equal to or less than a second set value.
4. A surface acoustic wave device with a lateral clutter suppression function according to claim 2 or 3, characterized in that the first setting value is 50nm and the second setting value is 100 times the finger width.
5. The surface acoustic wave device with a transverse clutter suppression function according to claim 1, wherein adjacent ones of the fingers are grouped in pairs, two of the fingers of a same group have a lower side extending downward to meet the busbar and an upper side extending upward to meet the busbar.
6. The surface acoustic wave device with the transverse clutter suppression function comprises a busbar, a false finger and a finger assembly, and is characterized by further comprising a suspension block assembly, wherein the finger assembly comprises a plurality of finger strips uniformly arranged along the axial direction, the suspension block assembly comprises a plurality of suspension block components, the suspension block components are in one-to-one correspondence with the finger strips, the suspension block components are positioned between the corresponding finger strips and the false finger, and gaps are reserved between the suspension block components and the corresponding finger strips and the false finger.
7. The surface acoustic wave device with a transverse clutter suppression function according to claim 6, wherein the levitation block component includes a levitation block, a distance from the levitation block to the artificial finger is equal to or greater than a first set value and equal to or less than a second set value, and a distance from the levitation block to the finger is equal to or greater than the first set value and equal to or less than the second set value.
8. The surface acoustic wave device with the horizontal clutter suppression function according to claim 6, wherein the levitation block component includes a plurality of levitation blocks, the plurality of levitation blocks are uniformly arranged vertically, a distance from an uppermost one of the levitation blocks to the artificial finger is equal to or greater than a first set value and equal to or less than a second set value, a distance from a lowermost one of the levitation blocks to the finger is equal to or greater than a first set value and equal to or less than a second set value, and a distance between two adjacent levitation blocks is equal to or greater than the first set value and equal to or less than the second set value.
9. The surface acoustic wave device with a lateral clutter suppression function according to claim 7 or 8, wherein the first setting value is 50nm and the second setting value is 100 times line width.
10. The surface acoustic wave device with a transverse clutter suppression function according to claim 6, wherein adjacent ones of said fingers are grouped in pairs, two of said fingers of a same group having one of said fingers extending downward from a lower side to meet said busbar and the other of said fingers extending upward from an upper side to meet said busbar.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202310455755.XA CN116455350A (en) | 2023-04-25 | 2023-04-25 | Surface acoustic wave device with transverse clutter suppression function |
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| CN202310455755.XA CN116455350A (en) | 2023-04-25 | 2023-04-25 | Surface acoustic wave device with transverse clutter suppression function |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN118138008A (en) * | 2024-05-06 | 2024-06-04 | 成都频岢微电子有限公司 | Filter with lateral mode suppression function |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN118138008A (en) * | 2024-05-06 | 2024-06-04 | 成都频岢微电子有限公司 | Filter with lateral mode suppression function |
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