CN113489471B - Low-loss surface acoustic wave device - Google Patents
Low-loss surface acoustic wave device Download PDFInfo
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- CN113489471B CN113489471B CN202110786410.3A CN202110786410A CN113489471B CN 113489471 B CN113489471 B CN 113489471B CN 202110786410 A CN202110786410 A CN 202110786410A CN 113489471 B CN113489471 B CN 113489471B
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- 238000010897 surface acoustic wave method Methods 0.000 title claims abstract description 50
- 238000005468 ion implantation Methods 0.000 claims abstract description 84
- 239000000758 substrate Substances 0.000 claims abstract description 29
- -1 boron ions Chemical class 0.000 claims description 9
- 150000002500 ions Chemical class 0.000 claims description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- 238000001465 metallisation Methods 0.000 claims description 6
- 229910052721 tungsten Inorganic materials 0.000 claims description 6
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 3
- 239000001307 helium Substances 0.000 claims description 3
- 229910052734 helium Inorganic materials 0.000 claims description 3
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 3
- 239000010453 quartz Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 239000011787 zinc oxide Substances 0.000 claims description 3
- 238000003780 insertion Methods 0.000 abstract description 8
- 230000037431 insertion Effects 0.000 abstract description 8
- 230000004044 response Effects 0.000 abstract description 6
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000002401 inhibitory effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000011056 performance test Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02637—Details concerning reflective or coupling arrays
- H03H9/02653—Grooves or arrays buried in the substrate
- H03H9/02661—Grooves or arrays buried in the substrate being located inside the interdigital transducers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02818—Means for compensation or elimination of undesirable effects
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
The application discloses a low-loss surface acoustic wave device, which relates to the field of surface acoustic wave devices, and is characterized in that a selected area in an interdigital transducer is used for carrying out ion implantation on a piezoelectric substrate, so that the lattice structure of the piezoelectric substrate in the area is slightly disordered, the sound velocity of the area is reduced, and the area is better matched with the shape of an acoustic mode, thereby reducing the transverse mode and clutter response, reducing the insertion loss, reducing in-band fluctuation and reducing the rectangular coefficient.
Description
Technical Field
The present application relates to the field of surface acoustic wave devices, and more particularly, to a low-loss surface acoustic wave device.
Background
The surface acoustic wave filter is a filter device prepared by utilizing an electro-acoustic conversion technology, can realize high frequency, has adjustable frequency and low loss, has flexible design and mature manufacturing process, and is widely applied to the fields of traffic, medical detection, mobile communication and the like.
Along with the continuous expansion of the 5G communication system, the demand and the value of mobile terminal equipment manufacturers for the radio frequency front end chip are greatly increased, and especially the demand for the filter is most obvious. While 5G brings wide market prospects to the filter industry, it also puts more stringent requirements on the performance of the filter, especially lower insertion loss and smaller in-band fluctuations. The surface acoustic wave filter is prepared by adopting a mature MEMS technology, integrates miniaturization, low loss and high out-of-band suppression, and is still the main stream of the radio frequency front-end filter at present. However, the conventional saw filter adopted at present has strong transverse mode response, so that the loss of a passband and in-band fluctuation are seriously deteriorated, and the requirement of 5G communication on the filter performance cannot be met. Therefore, reasonable design of the surface acoustic wave device to reduce the transverse mode response to achieve low insertion loss will become a necessary condition for its stable development in the 5G age.
Disclosure of Invention
The present inventors have proposed a low-loss surface acoustic wave device, which is directed to the above-mentioned problems and technical needs, and the technical scheme of the present application is as follows:
a low-loss surface acoustic wave device comprises a piezoelectric substrate and an interdigital transducer arranged on the piezoelectric substrate, wherein the interdigital transducer comprises interdigital electrodes and bus bars, the interdigital electrodes comprise a first interdigital electrode and a second interdigital electrode which are oppositely and crosswise arranged, the first bus bar connected with a comb handle part of the first interdigital electrode and the second bus bar connected with a comb handle part of the second interdigital electrode are connected, an interdigital area is formed between the tail end edge of the first interdigital electrode and the tail end edge of the second interdigital electrode, a first single-finger area is formed between the tail end edge of the first interdigital electrode and the comb handle edge of the second interdigital electrode, a second single-finger area is formed between the tail end edge of the second interdigital electrode and the comb handle edge of the first interdigital electrode, an ion implantation area is formed on the piezoelectric substrate, the ion implantation area comprises a first ion implantation area and a second ion implantation area, the first ion implantation area is located in a preset area of the tail end edge of the first interdigital electrode, the second ion implantation area is located in a preset area of the tail end edge of the second interdigital electrode, the first ion implantation area and the second ion implantation area is smaller than the first and the second ion implantation area in the width lambda-symmetric position.
Further, the widths of the first ion implantation region and the second ion implantation region are 20% -80% of the period length lambda of the interdigital electrode.
Further, the first ion implantation region is located in the first single-finger region entirely, or located in the interdigital region entirely, or located in the first single-finger region partially, or located in the interdigital region partially; the second ion implantation region is located entirely within the second single-finger region, or entirely within the interdigital region, or partially within the second single-finger region, and partially within the interdigital region.
Further, when the first ion implantation region is located entirely within the first single-finger region or entirely within the interdigital region, a side of the first ion implantation region near the end edge of the first interdigital electrode coincides with the end edge of the first interdigital electrode; when the second ion implantation region is located entirely within the second single-finger region or entirely within the interdigital region, a side of the second ion implantation region near the end edge of the second interdigital electrode coincides with the end edge of the second interdigital electrode.
Further, the metallization ratio of the interdigital electrode in the interdigital region is 0.3-0.8, and the thickness of the interdigital electrode in the interdigital region is 3% -12% of the period length lambda of the interdigital electrode.
Further, the ion implanted ions are boron ions, argon ions or helium ions.
Further, the material of the interdigitated electrodes comprises at least one of Ti, al, cu, ag, ni, cr, pt, au, mo, W and/or an alloy comprising at least one of Ti, al, cu, ag, ni, cr, pt, au, mo, W.
Further, the material of the piezoelectric substrate includes at least one of quartz, lithium niobate, lithium tantalate, aluminum nitride, and zinc oxide.
Further, the surface acoustic wave device includes a filter, a duplexer, or a radio frequency module including the filter and the duplexer.
The beneficial technical effects of the application are as follows:
the application discloses a low-loss surface acoustic wave device, which performs ion implantation on a piezoelectric substrate in a selected area in an interdigital transducer, so that the lattice structure of the piezoelectric substrate in the area is destroyed, the sound velocity of the area is reduced, and the acoustic surface acoustic wave device can better match the shape of an acoustic mode, thereby inhibiting the acoustic transverse mode and clutter response, reducing the insertion loss, reducing in-band fluctuation and improving the rectangular coefficient.
Drawings
Fig. 1 is a plan view of a surface acoustic wave device according to embodiment 1 of the present application.
Fig. 2 is a front view of the surface acoustic wave device of embodiment 1 of the present application in the y direction at AA' in fig. 1.
Fig. 3 is a front view of the surface acoustic wave device of embodiment 1 of the present application in the y direction at BB' in fig. 1.
Fig. 4 is a front view of the surface acoustic wave device of embodiment 1 of the present application in the y direction at CC' in fig. 1.
Fig. 5 is a plan view of a surface acoustic wave device according to embodiment 2 of the present application.
Fig. 6 is a front view of the surface acoustic wave device of embodiment 2 of the present application in the y direction at AA' in fig. 2.
Fig. 7 is a plan view of a surface acoustic wave device according to embodiment 3 of the present application.
Fig. 8 is a front view of the surface acoustic wave device of embodiment 3 of the present application in the y direction at AA' in fig. 7.
Fig. 9 is a front view of the surface acoustic wave device of embodiment 3 of the present application in the y direction at BB' in fig. 7.
Fig. 10 is a performance test chart of the surface acoustic wave device of embodiment 3 of the present application.
Detailed Description
The following describes the embodiments of the present application further with reference to the drawings.
The application provides a low-loss surface acoustic wave device, as shown in figures 1-9, which comprises a piezoelectric substrate 1 and an interdigital transducer deposited on the piezoelectric substrate 1, wherein the material of the piezoelectric substrate comprises at least one of quartz, lithium niobate, lithium tantalate, aluminum nitride and zinc oxide; the interdigital transducer comprises interdigital electrodes and bus bars, wherein the interdigital electrodes comprise a first interdigital electrode 2 and a second interdigital electrode 3 which are oppositely and crosswise arranged, a first bus bar 4 connected with a comb handle part of the first interdigital electrode 2 and a second bus bar 5 connected with a comb handle part of the second interdigital electrode 3, an interdigital area is formed between the tail end edge of the first interdigital electrode 2 and the tail end edge of the second interdigital electrode 3, a first single-finger area is formed between the tail end edge of the first interdigital electrode 2 and the comb handle edge of the second interdigital electrode 3, and a second single-finger area is formed between the tail end edge of the second interdigital electrode 3 and the comb handle edge of the first interdigital electrode 2. The adjacent two interdigital electrodes are not contacted with each other and have opposite electric polarities, and the material of the interdigital electrodes comprises at least one of Ti, al, cu, ag, ni, cr, pt, au, mo, W or an alloy containing at least one of Ti, al, cu, ag, ni, cr, pt, au, mo, W. The arrangement direction of the interdigital electrodes is the sound wave propagation direction, the plane in which the interdigital transducer is positioned is the xy plane, the sound wave propagation direction is defined as the x direction, the vertical sound wave propagation direction is the y direction, and the z direction is vertical to the xy plane.
The metallization ratio of the interdigital electrode in the interdigital region is 0.3-0.8, and the thickness of the interdigital electrode in the interdigital region is 3-12% of the period length lambda of the interdigital electrode.
The piezoelectric substrate 1 is further formed with a first ion implantation region 6 and a second ion implantation region 7, and ions used for ion implantation are argon ions, helium ions or boron ions, and the portion of the piezoelectric substrate 1 covered with the interdigital electrode is not subjected to ion implantation. The first ion implantation region 6 is located in a first predetermined area of the end edge of the first interdigital electrode 2, the second ion implantation region 7 is located in a second predetermined area of the end edge of the second interdigital electrode 3, and the first ion implantation region 6 and the second ion implantation region 7 have the same width and are symmetrical in position. One side of the first predetermined area is located within the first single-finger region, and the distance between the side and the end edge of the first interdigital electrode 2 in the y direction is smaller than the period length λ of the interdigital electrode; the other side of the first predetermined area is located within the interdigital region, and the distance between the other side and the end edge of the first interdigital electrode 2 in the y direction is smaller than the period length λ of the interdigital electrode; the width of the first ion implantation region 6 is smaller than the period length lambda of the interdigital electrode. One side of the second predetermined area is located within the second single-finger region, and the distance between the side and the end edge of the second interdigital electrode 3 in the y direction is smaller than the period length λ of the interdigital electrode; the other side of the second predetermined area is located within the interdigital region, and the distance between the other side and the end edge of the second interdigital electrode 3 in the y direction is smaller than the period length λ of the interdigital electrode; the width of the second ion implantation region 7 is smaller than the period length lambda of the interdigital electrode.
Alternatively, the width of the first ion implantation region 6 and the width of the second ion implantation region 7 are 20% -80% of the period length λ of the interdigital electrode.
Optionally, the first ion implantation region 6 is located entirely within the first single-finger region, or entirely within the interdigital region, or partially within the first single-finger region, and partially within the interdigital region; when the first ion implantation region 6 is entirely located within the first single-finger region, or entirely located within the interdigital region, a side of the first ion implantation region 6 near the end edge of the first interdigital electrode 2 coincides with the end edge of the first interdigital electrode 2. The second ion implantation region 7 is located entirely within the second single-finger region, or entirely within the interdigital region, or partially within the second single-finger region, partially within the interdigital region; when the second ion implantation region 7 is entirely located within the second single-finger region, or entirely located within the interdigital region, a side of the second ion implantation region 7 near the end edge of the second interdigital electrode 3 coincides with the end edge of the second interdigital electrode 3.
The surface acoustic wave device can be a filter, a duplexer, or a radio frequency module including the filter and the duplexer, etc.
The preparation process of the surface acoustic wave device mainly comprises the following steps:
step 1, providing a cleaned piezoelectric substrate;
step 2, manufacturing interdigital electrodes and bus bars on the piezoelectric substrate;
and 3, spin-coating photoresist on the piezoelectric substrate with the interdigital electrodes and the bus bars, exposing, developing and ion implanting selected areas, and removing photoresist to obtain ion implanted areas.
Example 1
Fig. 1 to 4 show a low-loss surface acoustic wave device provided in embodiment 1 of the present application. The piezoelectric substrate 1 of the surface acoustic wave device uses 15 DEG YX-LiNbO with high electromechanical coupling coefficient 3 The wafer, the interdigital electrode is a multi-layer metal structure formed by Ti/Cu/Ti or Cr/Cu/Cr. The metallization ratio of the interdigital electrode in the interdigital region is 0.4-0.6, and the thickness of the interdigital electrode in the interdigital region is 6% -9% of the period length lambda of the interdigital electrode.
The first ion implantation region 6 on the piezoelectric substrate 1 is partially formed in the first single finger region, partially formed in the interdigital region, the width of the portion of the first ion implantation region 6 located in the first single finger region is 0.2λ -0.4λ, the width of the portion of the first ion implantation region 6 located in the interdigital region is 0.2λ -0.4λ, that is, the width of the first ion implantation region 6 is 0.4λ -0.8λ; the second ion implantation region 7 is partially formed in the second single finger region, partially formed in the interdigital region, and the width of the portion of the second ion implantation region 7 located in the second single finger region is 0.2λ -0.4λ, and the width of the portion of the second ion implantation region 7 located in the interdigital region is 0.2λ -0.4λ, that is, the width of the second ion implantation region 7 is 0.4λ -0.8λ. The first ion implantation region 6 and the second ion implantation region 7 have the same width and are symmetrical in position.
Example 2
Fig. 5 to 6 show a low-loss surface acoustic wave device provided in embodiment 2 of the present application. The piezoelectric substrate 1 of the surface acoustic wave device uses 36 YX-LiTaO 3 The interdigital electrode is a multi-layer metal structure formed by Ti/Cu/Ti or Cr/Cu/Cr. The metallization ratio of the interdigital electrode in the interdigital region is 0.3-0.7, and the thickness of the interdigital electrode in the interdigital region is 3-6% of the period length lambda of the interdigital electrode.
The first ion implantation regions 6 on the piezoelectric substrate 1 are all formed in the interdigital regions, one side of the first ion implantation regions 6 near the end edges of the first interdigital electrodes 2 coincides with the end edges of the first interdigital electrodes 2, and the width of the first ion implantation regions 6 is 0.2λ -0.6λ. The second ion implantation regions 7 are all formed in the interdigital regions, one side of the second ion implantation regions 7 near the end edges of the second interdigital electrodes 3 coincides with the end edges of the second interdigital electrodes 3, and the width of the second ion implantation regions 7 is 0.2λ -0.6λ. The first ion implantation region 6 and the second ion implantation region 7 have the same width and are symmetrical in position.
Example 3
Fig. 7 to 9 show a low-loss surface acoustic wave device provided in embodiment 3 of the present application. The piezoelectric substrate 1 of the surface acoustic wave device uses 42 YX-LiTaO 3 /SiO 2 The Si multilayer chip has an interdigital electrode having a multilayer metal structure formed of Ti/Al/Ti, and a period length lambda of the interdigital electrode is 1.56-1.64 μm. The metallization ratio of the interdigital electrode in the interdigital region is 0.4-0.8, and the thickness of the interdigital electrode in the interdigital region is 7% -10% of the period length lambda of the interdigital electrode.
The first ion implantation regions 6 on the piezoelectric substrate 1 are all formed in the first single finger region, one side of the first ion implantation regions 6 near the end edges of the first interdigital electrodes 2 coincides with the end edges of the first interdigital electrodes 2, and the width of the first ion implantation regions 6 is 0.25λ -0.65λ. The second ion implantation regions 7 are all formed in the second single finger regions, one side of the second ion implantation regions 7 near the end edges of the second finger electrodes 3 coincides with the end edges of the second finger electrodes 3, and the width of the second ion implantation regions 7 is 0.25λ -0.65λ. The first ion implantation region 6 and the second ion implantation region 7 have the same width and are symmetrical in position.
The performance test result of the surface acoustic wave device of this example 3 is shown in fig. 10. The abscissa represents the frequency, and the ordinate represents the insertion loss of the surface acoustic wave device, with the center frequency of 2440MHz. Wherein the insertion loss of the surface acoustic wave device subjected to ion implantation treatment is-1.28 dB, and the insertion loss of the surface acoustic wave device not subjected to ion implantation treatment is-1.68 dB. The passband transverse clutter response, in-band ripple, and transition band rectangle of the ion-implanted surface acoustic wave device are all improved. Therefore, it is understood by comparison that the performance of the surface acoustic wave device using the selected region of the present application for ion implantation has significant advantages over the surface acoustic wave device without ion implantation.
According to the surface acoustic wave device, ion implantation is performed on the piezoelectric substrate within a certain width range above and/or below one end of the y direction of the interdigital electrode, which is not connected with the bus bar, so that the lattice structure of the piezoelectric substrate at the edge of the interdigital electrode is destroyed, and the sound velocity of the piezoelectric substrate is reduced, thereby being capable of inhibiting an acoustic transverse mode and clutter response, reducing insertion loss, reducing in-band fluctuation and improving rectangularity.
The above is only a preferred embodiment of the present application, and the present application is not limited to the above examples. It is to be understood that other modifications and variations which may be directly derived or contemplated by those skilled in the art without departing from the spirit and concepts of the present application are deemed to be included within the scope of the present application.
Claims (8)
1. A low-loss surface acoustic wave device comprising a piezoelectric substrate, an interdigital transducer provided on the piezoelectric substrate, the interdigital transducer comprising interdigital electrodes and bus bars, the interdigital electrodes comprising first interdigital electrodes and second interdigital electrodes which are arranged in opposite cross, and a first bus bar connected to a comb handle portion of the first interdigital electrode and a second bus bar connected to a comb handle portion of the second interdigital electrode, an interdigital region being formed between a tip edge of the first interdigital electrode and a tip edge of the second interdigital electrode, a first single-finger region being formed between a tip edge of the first interdigital electrode and a comb handle edge of the second interdigital electrode, a second single-finger region being formed between a tip edge of the second interdigital electrode and a comb handle edge of the first interdigital electrode, characterized in that an ion implantation region is formed on the piezoelectric substrate, the ion implantation region comprises a first ion implantation region and a second ion implantation region, the first ion implantation region is located in a predetermined region of the tip edge of the first interdigital electrode, the second ion implantation region is located in a predetermined region of the same width and the second ion implantation region is located in the predetermined region of the second interdigital electrode, and the ion implantation region is located in the predetermined region of the same width;
the first ion implantation region is located in the first single-finger region entirely or in the first single-finger region and in the interdigital region partially; the second ion implantation region is located in the second single-finger region entirely or partially located in the second single-finger region and partially located in the interdigital region.
2. The surface acoustic wave device according to claim 1, wherein the widths of the first ion implantation region and the second ion implantation region are 20% to 80% of the period length λ of the interdigital electrode.
3. The surface acoustic wave device according to claim 1, wherein when the first ion implantation region is entirely located within the first single-finger region, a side of the first ion implantation region near the end edge of the first interdigital electrode coincides with the end edge of the first interdigital electrode; when the second ion implantation regions are all located in the second single-finger regions, one side of the second ion implantation regions, which is close to the tail end edge of the second interdigital electrode, coincides with the tail end edge of the second interdigital electrode.
4. The surface acoustic wave device according to claim 1, wherein a metallization ratio of the interdigital electrode in the interdigital region is 0.3 to 0.8, and a thickness of the interdigital electrode in the interdigital region is 3% to 12% of a period length λ of the interdigital electrode.
5. The surface acoustic wave device according to claim 1, wherein the ion implanted ions are boron ions, argon ions, or helium ions.
6. The surface acoustic wave device of claim 1, wherein the material of the interdigital electrode comprises at least one of Ti, al, cu, ag, ni, cr, pt, au, mo, W and/or an alloy comprising at least one of Ti, al, cu, ag, ni, cr, pt, au, mo, W.
7. The surface acoustic wave device according to claim 1, wherein the material of the piezoelectric substrate includes at least one of quartz, lithium niobate, lithium tantalate, aluminum nitride, and zinc oxide.
8. The surface acoustic wave device according to claim 1, characterized in that the surface acoustic wave device comprises a filter, a duplexer, or a radio frequency module comprising a filter and a duplexer.
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| CN114337582B (en) * | 2021-12-03 | 2024-06-11 | 中国科学院上海微系统与信息技术研究所 | Surface acoustic wave resonator |
| CN115296642B (en) | 2022-10-08 | 2023-03-24 | 深圳新声半导体有限公司 | Surface acoustic wave resonator structure, forming method thereof and filter |
| CN117097295B (en) * | 2023-10-17 | 2024-02-06 | 深圳新声半导体有限公司 | Surface acoustic wave resonator device, method of manufacturing the same, and filter |
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| CN111200417A (en) * | 2020-02-17 | 2020-05-26 | 无锡市好达电子有限公司 | Surface acoustic wave transducer with transverse mode suppression function and preparation method thereof |
| CN111934644A (en) * | 2020-07-31 | 2020-11-13 | 杭州见闻录科技有限公司 | Interdigital electrode structure, manufacturing method thereof and surface acoustic wave device with interdigital electrode structure |
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