CN116448625A - Method for identifying ultraviolet radiation aging resistant degree of coating on insulator - Google Patents

Method for identifying ultraviolet radiation aging resistant degree of coating on insulator Download PDF

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Publication number
CN116448625A
CN116448625A CN202210665393.2A CN202210665393A CN116448625A CN 116448625 A CN116448625 A CN 116448625A CN 202210665393 A CN202210665393 A CN 202210665393A CN 116448625 A CN116448625 A CN 116448625A
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score
sample
sample wafer
insulator
preset
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张爱文
万民涛
秦雪峰
刘�文
赵云涛
曹博然
王飞鹏
何杰
叶剑鹏
李剑
王强
黄正勇
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China Zhongyuan Engineering Corp
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N13/00—Investigating surface or boundary effects, e.g. wetting power; Investigating diffusion effects; Analysing materials by determining surface, boundary, or diffusion effects
    • G01N13/02—Investigating surface tension of liquids
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N17/00—Investigating resistance of materials to the weather, to corrosion, or to light
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
    • G01N21/3563—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing solids; Preparation of samples therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N13/00—Investigating surface or boundary effects, e.g. wetting power; Investigating diffusion effects; Analysing materials by determining surface, boundary, or diffusion effects
    • G01N13/02—Investigating surface tension of liquids
    • G01N2013/0208—Investigating surface tension of liquids by measuring contact angle
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
    • G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
    • G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
    • G01N2021/3595—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using FTIR
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

The invention discloses a method for identifying ultraviolet radiation aging resistance degree of a coating on an insulator, which is characterized by comprising the following steps: sampling the surface of the coating on the insulator to be identified to obtain a sample wafer; performing a hydrophobicity test on the sample wafer to determine the static contact angle of the sample wafer; determining a hydrophobicity score according to the static contact angle of the sample wafer; carrying out Fourier infrared spectrum test on the sample wafer to determine the infrared spectrum Si-O-Si, si (CH) 3 ) 2 、Si‑CH 3 And CH (CH) 3 (C-H) heights of four absorption peaks; determining a chemical bond score; and determining the total ultraviolet radiation resistant score of the sample wafer according to the hydrophobicity score and the chemical bond score so as to determine the aging degree of the sample wafer. The invention considers the index of microscopic and macroscopic layers at the same time, and can improve the upper coating of the insulatorThe discrimination precision of the ultraviolet radiation resistance of the insulator is effectively discriminated.

Description

Method for identifying ultraviolet radiation aging resistant degree of coating on insulator
Technical Field
The invention relates to the field of insulator coating evaluation, in particular to a method for identifying ultraviolet radiation aging resistance of a coating on an insulator.
Background
The silicone rubber coating on the surface of the insulator can be aged gradually in the running process, the process can lead the molecular chain of the siloxane to be broken and crosslinked and oxidized with side chain groups to generate hydrophilic products such as silanol and the like, the hydrophobicity of the coating is reduced, the pollution accumulation is increased, and the surface flashover risk is increased. Meanwhile, small molecular products generated by molecular chain fracture can be washed away from the surface of the coating by rainwater or cleaning agent to damage the integrity of the surface of the coating, so that inorganic filler in the coating is exposed, the surface roughness of the coating is increased, the dirt accumulation is further increased, and the insulating property is further reduced. The single index grading evaluation method for static contact angle change, surface element content change, microscopic group content change and the like which are commonly used at present has the advantages of simpler principle and lower operation difficulty, but has the problems of incomplete index investigation and higher misjudgment rate, and has an unsatisfactory judgment effect on the irradiation resistance of the silicone rubber coating. Therefore, a more ideal method for identifying the ageing degree of the coating on the insulator under ultraviolet irradiation is needed.
Disclosure of Invention
In view of the above-mentioned drawbacks of the prior art, an object of the present invention is to provide a method for identifying the degree of ageing of a coating on an insulator against uv irradiation, which solves at least one of the drawbacks of the prior art.
To achieve the above and other related objects, the present invention provides a method for identifying the aging degree of a coating on an insulator against ultraviolet irradiation, comprising:
sampling the surface of the coating on the insulator to be identified to obtain a sample wafer;
performing a hydrophobicity test on the sample wafer to determine the static contact angle theta of the sample wafer t ；
Judging the static contact angle theta t Whether the angle is lower than a preset angle;
if the static contact angle theta t If the service life of the sample is lower than the preset angle, judging that the service life of the sample is ended;
if the static contact angle theta t Not lower than the preset angle, according to the static contact angle theta t And preset standard static contact angle theta s Determining the hydrophobicity score C of the dailies 1 ；
Performing Fourier infrared spectrum test on the sample wafer to determine infrared spectrum Si-O-Si and Si (CH) 3 ) 2 、Si-CH 3 And CH (CH) 3 (C-H) the heights of the four absorption peaks, respectively designated as H Si-O-Si 、H Si(CH3)2 、H Si-CH3 And H CH3(C-H) ；
Judging whether the height of any one of the four absorption peaks is smaller than the corresponding preset height, wherein each absorption peak corresponds to one preset height;
if any one of the four absorption peaks is smaller than the corresponding preset height, judging that the life of the sample wafer is ended;
if any one of the four absorption peak heights is not smaller than the corresponding preset height, determining the characteristic absorption peak height H of the sample according to the heights of the four absorption peaks t And according to the preset standard characteristic absorption peak height H s Determining the chemical bond score C of the sample wafer 2 ；
According to the hydrophobicity score C 1 And the chemical bond score C 2 Determining the ultraviolet radiation resistant total component C of the sample wafer;
and determining the aging degree of the sample according to the ultraviolet radiation resistant total score of the sample.
Optionally, the method further comprises: the swatches were rinsed with absolute ethanol prior to the hydrophobicity test.
Optionally, the performing a hydrophobicity test on the sample wafer, and determining the static contact angle of the sample wafer includes: measuring the sample wafer subjected to the hydrophobicity test for a preset number of times; taking an average value of the measurement results of the preset times; and determining the average value as the static contact angle of the sample wafer.
Optionally, the preset angle is 80 degrees.
Optionally, the preset height corresponding to the absorption peak is 10% of the preset standard absorption peak height corresponding to the absorption peak.
Optionally, the sample wafer has a characteristic absorption peak height H t The determining method of (1) comprises the following steps:
optionally, the saidChemical bond score C of sample wafer 2 The determining method of (1) comprises the following steps:
optionally, the total ultraviolet radiation resistant score C of the sample wafer is the hydrophobicity score C 1 And the chemical bond score C 2 Is a weighted average of (c).
Optionally, the method for determining the total ultraviolet radiation resistant fraction C of the sample wafer is c=0.5c 1 +0.5C 2 。
Optionally, the determining the aging degree of the sample according to the ultraviolet radiation resistant total score of the sample comprises: comparing the ultraviolet radiation resistant total with a preset fraction; if the total ultraviolet radiation resistant score is smaller than the preset score, judging that the service life of the sample wafer is ended; if the total ultraviolet radiation resistant score is not smaller than the preset score, the ultraviolet radiation resistant score is used as the identification basis of the ultraviolet radiation resistant aging degree of the sample wafer.
As described above, the method for identifying the ultraviolet irradiation aging resistance degree of the coating on the insulator has the following beneficial effects:
1. the method simultaneously considers microscopic and macroscopic multi-level indexes, compared with the traditional single-index evaluation method, the method is more comprehensive in consideration, can improve the discrimination precision of the ultraviolet irradiation resistance of the upper coating of the insulator, effectively discriminates the ultraviolet irradiation aging condition of the upper coating of the insulator, can reduce pollution flashover probability and improves the practical safety of the silicon rubber coated insulator;
2. according to the method, the performance indexes of the silicone rubber coating are normalized, so that the ultraviolet irradiation resistance of different types of silicone rubber coatings can be effectively compared;
3. the method combines a continuous score evaluation system with a grading judgment system, so that the judgment result is more fit with the actual requirements of the engineering on the performance of the silicone rubber coating;
4. the method provided by the invention has the guiding effect on the work such as the supplementary spraying of the coating by judging the residual ultraviolet irradiation resistance of the silicone rubber coating.
Drawings
FIG. 1 is an exemplary flow chart of a method for identifying the degree of ultraviolet radiation aging resistance of a coating on an insulator according to one embodiment of the invention;
fig. 2 is an infrared spectrogram of insulator No. 1 and insulator No. 2, according to one embodiment of the present invention.
Detailed Description
Other advantages and effects of the present invention will become apparent to those skilled in the art from the following disclosure, which describes the embodiments of the present invention with reference to specific examples. The invention may be practiced or carried out in other embodiments that depart from the specific details, and the details of the present description may be modified or varied from the spirit and scope of the present invention. It should be noted that the following embodiments and features in the embodiments may be combined with each other without conflict.
It should be noted that the illustrations provided in the following embodiments merely illustrate the basic concept of the present invention by way of illustration, and only the components related to the present invention are shown in the drawings and are not drawn according to the number, shape and size of the components in actual implementation, and the form, number and proportion of the components in actual implementation may be arbitrarily changed, and the layout of the components may be more complicated.
The method aims at identifying the ultraviolet irradiation aging resistance degree of the coating on the insulator, solves the defects of the existing method, and has good application prospect and very important practical significance.
The general concept of the present application is: firstly, sampling a coating surface on an insulator to be identified to obtain a sample wafer; and then carrying out a hydrophobicity test and a Fourier infrared spectrum test on the sample wafer, and simultaneously judging the ultraviolet irradiation resistance of the sample wafer by determining the static contact angle and the heights of different absorption peaks.
Fig. 1 is an exemplary flow chart of a method for identifying the degree of uv radiation aging resistance of a coating on an insulator according to one embodiment of the invention.
A sample may be obtained from a focused sample of the coated surface on the insulator to be identified at step 101. In some embodiments, samples may be taken from the upper surface of the uppermost insulator that is exposed to the ultraviolet radiation for the longest period of time and at the highest intensity. In some embodiments, prior to sampling, the charge may be released by grounding the metal wire, and then sampling may be performed by selecting the most contaminated or roughened portion of the upper surface. In some embodiments, square sample 1 pieces of 10mm x 10mm in size may be taken. In other embodiments, the dimensions of the sample piece may be other values, and the shape of the sample piece may be other than square, e.g., rectangular, circular, etc.
In step 102, a hydrophobicity test may be performed on the sample to determine a static contact angle θ of the sample t . In some embodiments, the result of one measurement may be taken as the static contact angle of the swatch. In some embodiments, a sample wafer after being subjected to the hydrophobicity test may be measured for a preset number of times, then an average value of the measurement results of the preset number of times is taken, and then the average value is determined as the static contact angle of the sample wafer. The preset number of times may be 2, 3, 4, 5, 6, 7, 8, etc.
In some embodiments, the swatches may also be first cleaned prior to performing the hydrophobicity test. The cleaning material used may be absolute ethanol or other materials. The cleaning may be followed by a period of time (e.g., 24 hours) after which the hydrophobicity test is performed after the hydrophobicity has been sufficiently restored. In some embodiments, a sample can be placed on the sample stage, the tilt angle of the sample stage is adjusted to level the surface of the sample, then a precision sample applicator can be used to drop 5 μl of deionized water onto the surface of the sample, then the focal length of the tester camera is adjusted to make the water drop profile as clear as possible, and finally the static contact angle of the sample is read using static contact angle measurement software.
In step 103, the static contact angle θ may be determined t Whether or not it is lower than a preset angle. The preset angle may be any value between 70 degrees and 90 degrees or any value of 90 degrees in height, such as 70 degrees, 71 degrees, 72 degrees, 73 degrees, 74 degrees, 75 degrees, 76 degrees, 77 degrees, 78 degrees, 79 degrees, 80 degrees, 81 degrees, 82 degrees, 83 degrees, 84 degrees, 85 degrees, 86 degrees, 87 degrees, 88 degrees, 89 degrees, 90 degrees, etc.
If the static contact angle theta is judged t Below the predetermined angle, it may be determined that the coupon has lost its ability to withstand ultraviolet radiation, i.e., the coupon has been out of life, at step 104.
If the static contact angle theta is judged t Not less than the predetermined angle, in step 105, the static contact angle θ may be determined t And preset standard static contact angle theta s Determining the hydrophobicity score C of the dailies 1 . The standard static contact angle theta s Representing the static contact angle of a standard new sample. In some embodiments, the hydrophobicity score C of the dailies 1 Can be determined according to equation 1.
Wherein C1 is the hydrophobicity score, θ, of the sample wafer t Static contact angle, θ, measured for the sample s Is the static contact angle of a standard new sample (i.e., a sample of the same coating of the same insulator without any uv irradiation or other physicochemical changes). In some embodiments, a hydrophobicity score of C may be scored 1 Two-bit decimal is retained. The hydrophobicity score of the swatch is a representation of the ability of the sample to withstand ultraviolet radiation on a macroscopic level.
In step 106, the sample may be subjected to a Fourier IR spectrum test to determine the IR spectra Si-O-Si, si (CH) 3 ) 2 、Si-CH 3 And CH (CH) 3 (C-H) the heights of the four absorption peaks, respectively designated as H Si-O-Si 、H Si(CH3)2 、H Si-CH3 And H CH3(C-H) 。
In some embodiments, the fourier infrared spectrometer and the upper controller can be turned on and the instrument is initialized, then the blank is placed on a sample stage of the tester, the outlet of the score device is aligned, then a background button is clicked to test the background spectrum, then the blank is transposed to a sample to be tested, and a test mode is selected, so that the infrared spectrum is tested, finally, the design characteristic peak on the infrared spectrum is marked, and the test result can be further stored.
It should be noted that step 106 may be performed simultaneously with step 102, or step 102 may be performed first and then step 106 may be performed, or step 106 may be performed first and then step 102 may be performed, which is not limited herein.
In step 107, it may be determined whether any of the four absorption peaks has a height less than its corresponding preset height. Each absorption peak corresponds to a preset height. In some embodiments, the predetermined height for each absorption peak may be the predetermined standard absorption peak height for that absorption peak multiplied by a ratio. The ratio may be 10%, 15%, 20%, etc. or any other value. The standard absorption peak height is the infrared spectrum Si-O-Si, si (CH) of the standard new sample when the Fourier infrared spectrum test is carried out 3 ) 2 、Si-CH 3 And CH (CH) 3 (C-H) heights of four absorption peaks.
If it is determined that the height of any one of the four absorption peaks is smaller than the corresponding preset height, in step 104, it may be determined that the sample wafer loses the ultraviolet irradiation resistance, i.e., the lifetime is terminated.
If it is determined that any one of the four absorption peak heights is not smaller than the corresponding preset height, in step 108, the characteristic absorption peak height H of the sample wafer may be determined according to the heights of the four absorption peaks t And according to the preset standard characteristic absorption peak height H s Determining the chemical bond score C of the sample wafer 2 . In some embodiments, the standard characteristic absorption peak height H s The sum or weighted sum of the standard absorption peak heights of the four absorption peaks of the sample wafer can be represented. The chemical bond score of the sample wafer is a representation of the ultraviolet radiation resistance of the sample wafer on a microscopic level.
In some embodiments, the sample wafer has a characteristic absorption peak height H t Can be determined according to equation 2:
in some embodiments, the sample wafer has a characteristic absorption peak height H t May be a weighted sum of the heights of the four absorption peaks.
In some embodiments, the chemical bond score C of the dailies 2 Can be determined according to equation 3:
in step 109, a hydrophobic score C may be determined based on the hydrophobicity score 1 And the chemical bond score C 2 And determining the ultraviolet irradiation resistant total component C of the sample wafer.
In some embodiments the total uv exposure resistance score C of the coupon may be determined according to equation 4:
C＝0.5C 1 +0.5C 2 . (4)
In some embodiments, the determination of the total uv exposure resistance score C of the sample wafer may also be to determine a hydrophobicity score C 1 And the chemical bond score C 2 Summation is performed with other weights.
In step 110, the degree of aging of the coupon may be determined based on the total uv exposure resistant score C of the coupon. In some embodiments, if the total uv exposure resistance score C of the coupon is below a preset score, then it may be determined that the coupon is losing uv exposure resistance, i.e., the coupon is end of life. And if the total ultraviolet radiation resistant score C of the sample wafer is not lower than the preset score, taking the score of C as a judgment basis of the ultraviolet radiation resistant capability. The higher C is, the stronger the residual ultraviolet irradiation resistance of the sample wafer is, namely the less serious the aging degree is; conversely, the smaller C indicates that the weaker the residual ultraviolet irradiation resistance of the sample wafer, namely the more serious the aging degree. In some implementations, the predetermined score may be 30 points, 35 points, 40 points, or any other value less than 50 points.
Specific examples are shown below to illustrate the technical aspects of the present invention.
The ultraviolet irradiation resistance of the silicon rubber coating of the suspension insulator in the coastal area of a certain country is tested, and the service time of the insulator is 13 months; selecting No. 1 and No. 4 insulators hung at the highest part in an insulator sample, wherein the specific operation comprises the following steps: the operator wears the butyronitrile glove, places the grounding wire on the surface of the insulator, and releases the residual charges of the two insulators; selecting the most serious area of dirt accumulation on the upper surface of the insulator, drawing a 10mm sampling area by using a pencil, and cutting a sample from the surface of the insulator by using a blade; cleaning a sample wafer taken from an insulator with absolute ethyl alcohol to remove dirt, placing the sample wafer on a flat and clean ceramic substrate, and drying the sample wafer at a light-proof place for 24 hours; placing the sample on a sample table, and adjusting the inclination angle of the sample table to enable the surface of the sample to be horizontal; dropwise adding 5 mu L of deionized water to the surface of the sample wafer by using an accurate sample adding device; adjusting the focal length of a camera of the tester to ensure that the outline of the water drop is as clear as possible; the static contact angle of the sample piece was read out by using static contact angle measurement software and measured 3 times in succession, and the measurement results are shown in table 1.
Sample wafer Reference standard sample No. 1 insulator No. 4 insulator
First test 110.4 109.8 110.8
Second test 112.3 110.3 110.1
Third test 111.8 109.5 109.1
Mean value (one-bit decimal retention) 111.5 109.9 110.0
TABLE 1
Then, wiping off water drops on the surface of the sample wafer by using a non-woven fabric; opening a Fourier infrared spectrum tester and an upper control computer and initializing the tester; because the automation degree of the test instrument is higher, the background spectrum is not required to be tested, the sample wafer is directly placed on the sample stage of the tester, the light outlet of the beam splitter is aligned, the test mode is selected, the infrared spectrum is tested, and the infrared spectra of the insulator No. 1 and the insulator No. 4 are shown in the figure 2. The key characteristic peak heights of insulator No. 1 and insulator No. 4 are shown in table 2.
TABLE 2
Finally, the test results are processed (e.g., the methods described in step 105 and step 108) to obtain a number 1 insulator with a hydrophobicity score (i.e., macroscopic level score) of 94.92, a chemical bond score (i.e., microscopic level score) of 72.66, and a total score of 83.8; the hydrophobicity score (i.e., macroscopic level score) of insulator number 4 was 95.24 score, the chemical bond score (i.e., microscopic level score) was 70.51 score, and the total score was 82.9 score.
The test results show that the two insulators have good ultraviolet irradiation resistance, namely, the aging is not serious, and the comprehensive performance decline is not obvious.
The above-described embodiments are merely preferred embodiments for fully explaining the present invention, and the scope of the present invention is not limited thereto. Equivalent substitutions and modifications will occur to those skilled in the art based on the present invention, and are intended to be within the scope of the present invention. The protection scope of the invention is subject to the claims.

Claims (10)

1. A method of identifying the degree of uv radiation aging resistance of a coating on an insulator comprising:
sampling the surface of the coating on the insulator to be identified to obtain a sample wafer;
performing a hydrophobicity test on the sample wafer to determine the static contact angle theta of the sample wafer t ；
Judging the static contact angle theta t Whether the angle is lower than a preset angle;
if the static contact angle theta t If the service life of the sample is lower than the preset angle, judging that the service life of the sample is ended;
if the static contact angle theta t Not lower than the preset angle, according to the static contact angle theta t And preset standard static contact angle theta s Determining the hydrophobicity score C of the dailies 1 ；
Performing Fourier infrared spectrum test on the sample wafer to determine infrared spectrum Si-O-Si and Si (CH) 3 ) 2 、Si-CH 3 And CH (CH) 3 (C-H) the heights of the four absorption peaks, respectively designated as H Si-O-Si 、H Si(CH3)2 、H Si-CH3 And H CH3(C-H) ；
Judging whether the height of any one of the four absorption peaks is smaller than the corresponding preset height, wherein each absorption peak corresponds to one preset height;
if any one of the four absorption peaks is smaller than the corresponding preset height, judging that the life of the sample wafer is ended;
if any one of the four absorption peak heights is not smaller than the corresponding preset height, determining the characteristic absorption peak height H of the sample according to the heights of the four absorption peaks t And according to the preset standard characteristic absorption peak height H s Determining the chemical bond score C of the sample wafer 2 ；
According to the hydrophobicity score C 1 And the chemical bond score C 2 Determining the ultraviolet radiation resistant total component C of the sample wafer;
and determining the aging degree of the sample according to the ultraviolet radiation resistant total score of the sample.
2. The method of identifying the degree of uv radiation aging of a coating on an insulator of claim 1, further comprising: the swatches were rinsed with absolute ethanol prior to the hydrophobicity test.
3. The method of claim 1, wherein said subjecting the coupon to a hydrophobicity test to determine the static contact angle of the coupon comprises:
measuring the sample wafer subjected to the hydrophobicity test for a preset number of times;
taking an average value of the measurement results of the preset times;
and determining the average value as the static contact angle of the sample wafer.
4. The method of claim 1, wherein the predetermined angle is 80 degrees.
5. The method of claim 1, wherein the predetermined height of the absorption peak is 10% of the predetermined standard absorption peak height.
6. The method for identifying the aging resistance of a coating on an insulator according to claim 1, wherein the sample has a characteristic absorption peak height H t The determining method comprises the following steps:
7. the method of identifying the degree of aging of a coating on an insulator by ultraviolet radiation according to claim 1, wherein the chemical bond score of the coupon is C 2 The determining method of (1) comprises the following steps:
8. the method of claim 1, wherein the total uv resistance score C of the sample wafer is the hydrophobicity score C 1 And the chemical bond score C 2 Is a weighted average of (c).
9. The method for identifying the aging resistance of a coating on an insulator according to claim 8, wherein the method for determining the total ultraviolet radiation resistance C of the sample wafer is c=0.5C 1 +0.5C 2 。
10. The method of identifying the degree of uv radiation aging of a coating on an insulator of claim 1, wherein said determining the degree of aging of the coupon based on the total uv radiation resistance score of the coupon comprises:
comparing the ultraviolet radiation resistant total with a preset fraction;
if the total ultraviolet radiation resistant score is smaller than the preset score, judging that the service life of the sample wafer is ended;
if the total ultraviolet radiation resistant score is not smaller than the preset score, the ultraviolet radiation resistant score is used as the identification basis of the ultraviolet radiation resistant aging degree of the sample wafer.
CN202210665393.2A 2022-05-20 2022-06-14 Method for identifying ultraviolet radiation aging resistant degree of coating on insulator Pending CN116448625A (en)

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US5241184A (en) * 1991-09-26 1993-08-31 Electric Power Research Institute Apparatus and method for quantizing remaining lifetime of transmission cable insulation
CN105403777B (en) * 2015-09-09 2019-08-02 华北电力大学 The classification of composite insulator ageing state and method of discrimination
CN106771765A (en) * 2017-01-05 2017-05-31 华北电力大学（保定） A kind of multidimensional parameter appraisal procedure of operating composite insulator degree of aging
CN112179852B (en) * 2020-09-02 2023-12-22 中国南方电网有限责任公司超高压输电公司检修试验中心 Method and device for predicting residual life of composite insulator
CN111965097A (en) * 2020-09-29 2020-11-20 海南电网有限责任公司电力科学研究院 Method for evaluating anti-aging performance of new composite insulator in tropical environment
CN114371372A (en) * 2021-12-08 2022-04-19 国网河北省电力有限公司电力科学研究院 Method and device for evaluating aging state of silicone rubber composite insulator

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