CN116443823A - Preparation method of tellurium alkene nano structure - Google Patents
Preparation method of tellurium alkene nano structure Download PDFInfo
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- CN116443823A CN116443823A CN202310260943.7A CN202310260943A CN116443823A CN 116443823 A CN116443823 A CN 116443823A CN 202310260943 A CN202310260943 A CN 202310260943A CN 116443823 A CN116443823 A CN 116443823A
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- 229910052714 tellurium Inorganic materials 0.000 title claims abstract description 29
- 239000002086 nanomaterial Substances 0.000 title claims abstract description 20
- -1 tellurium alkene Chemical class 0.000 title claims abstract description 20
- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- 238000000034 method Methods 0.000 claims abstract description 26
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 claims abstract description 25
- 239000000463 material Substances 0.000 claims abstract description 20
- 230000000694 effects Effects 0.000 claims abstract description 5
- 239000011159 matrix material Substances 0.000 claims abstract description 3
- 239000000758 substrate Substances 0.000 claims description 33
- 239000004205 dimethyl polysiloxane Substances 0.000 claims description 30
- 235000013870 dimethyl polysiloxane Nutrition 0.000 claims description 30
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 claims description 30
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 claims description 30
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 claims description 30
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 20
- 229910052710 silicon Inorganic materials 0.000 claims description 20
- 239000010703 silicon Substances 0.000 claims description 20
- 238000012546 transfer Methods 0.000 claims description 11
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 8
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 8
- 238000001069 Raman spectroscopy Methods 0.000 claims description 8
- 238000012360 testing method Methods 0.000 claims description 8
- 229910052582 BN Inorganic materials 0.000 claims description 6
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 6
- 238000001228 spectrum Methods 0.000 claims description 6
- 239000011261 inert gas Substances 0.000 claims description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- 239000008367 deionised water Substances 0.000 claims description 4
- 229910021641 deionized water Inorganic materials 0.000 claims description 4
- 239000012535 impurity Substances 0.000 claims description 4
- 238000004806 packaging method and process Methods 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- 238000002834 transmittance Methods 0.000 claims description 4
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 4
- 238000005406 washing Methods 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 2
- 239000003814 drug Substances 0.000 claims description 2
- 239000003041 laboratory chemical Substances 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 239000002390 adhesive tape Substances 0.000 claims 2
- 238000001035 drying Methods 0.000 claims 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 9
- 238000005240 physical vapour deposition Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000007791 liquid phase Substances 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 238000003786 synthesis reaction Methods 0.000 description 3
- 230000003321 amplification Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229940079593 drug Drugs 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000001027 hydrothermal synthesis Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000008204 material by function Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B19/00—Selenium; Tellurium; Compounds thereof
- C01B19/02—Elemental selenium or tellurium
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Nanotechnology (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
Abstract
The invention belongs to the field of material preparation, and particularly relates to a preparation method of a tellurium alkene nano structure. The method adopts laser irradiation, changes the structure of the material based on the local thermal effect generated under high power density, and prepares the tellurium alkene nano structure by taking telluride as a matrix. The tellurium alkene nanostructure obtained by the method adopts small laser irradiation light spots, can perform accurate regulation and control of local micro-areas, is simple to operate, consumes short time and can be applied on a large scale.
Description
Technical Field
The invention belongs to the field of material preparation, and particularly relates to a preparation method of a tellurium alkene nano structure.
Background
As an emerging class of two-dimensional functional materials, tellurium has excellent physical and chemical properties such as higher environmental stability, tunable narrow bandgap and lower thermal conductivity, so that two-dimensional tellurium has gained much attention in the relevant academic fields. Particularly in the field of broadband photodetectors. The tellurium alkene photoelectric detector integrates a plurality of excellent characteristics of two-dimensional material representativeness, shows great use flexibility, higher frequency response or faster time response, high signal to noise ratio and the like, and becomes the front edge of photoelectric detector research.
Common preparation methods of tellurium include Physical Vapor Deposition (PVD), solution synthesis, hydrothermal synthesis, liquid phase stripping (LPE), and the like. The existing synthesis technology has severe requirements on equipment and environment, for example, in order to further improve the performance of the photoelectric detector, the improvement of the material manufacturing process has great significance, and the ultra-thin 2D tellurium/telluride can be produced through a PVD strategy. However, the requirement of high purity atomic sources and high vacuum environments limits the possibility of amplification, and thus the potential for amplification. LPE technology is an effective means of fabricating layered 2D Te nanostructures, but the inefficient control of derivative material thickness and small scale limit further steps. Therefore, a new preparation method needs to be explored to realize an efficient and simple synthesis method, and particularly, the controllable preparation of the two-dimensional tellurium is developed.
Laser irradiation is the most common and effective technique for two-dimensional material processing. The realization of locally controllable modulation of the structure and physical properties of a two-dimensional material is an important research content in the aspect of material regulation. The principle of laser irradiation is to change the structure and properties of materials based on local thermal effects generated at high power densities, thereby regulating the performance of the device. By means of the highly controllable treatment mode of high-energy focusing laser beam irradiation, localized irradiation treatment can be realized on a two-dimensional material, and a more complex structure can be constructed in a single material while the physical properties of the structure are regulated and controlled, so that the method has important significance in deep research and optimization of material performance and discovery of new effects.
Disclosure of Invention
The invention provides a method for preparing a tellurium alkene nano structure by laser irradiation, the obtained tellurium alkene nano structure is locally adjustable, the method is simple to operate, the time consumption is short, and the method can be applied on a large scale.
In order to achieve the above purpose, the invention provides a preparation method of a tellurium alkene nano-structure domain, which adopts a laser irradiation method to prepare a tellurium alkene nano-structure with adjustable local area by taking a telluride as a matrix.
Preferably, the method comprises the steps of:
(1) The substrate is firstly subjected to ultrasonic cleaning by acetone, isopropanol and deionized water in sequence to remove impurities on the surface of the substrate, and then the substrate is dried by an ear washing ball.
(2) A tape was prepared and the telluride was peeled off directly to the PDMS film via the tape. And then turning over the PDMS film, precisely aligning the substrate by using a transfer table, attaching the telluride on the PDMS film to the target substrate, and transferring the sample to the target substrate successfully after slowly lifting the PDMS film.
(3) And packaging the telluride.
Mode one: a strip of tape was prepared and the few layers of hexagonal boron nitride were peeled directly from the PDMS film via the tape. And then turning over the PDMS film, precisely aligning the substrate by using a transfer table, enabling a few layers of hexagonal boron nitride on the PDMS to be covered and attached on the telluride, and after slowly lifting the PDMS film, successfully transferring the two-dimensional material onto the telluride of the target substrate.
Mode two: and (3) directly placing the substrate with the telluride obtained in the step (2) in a closed sample stage with high light transmittance, wherein the closed sample stage is in an inert gas atmosphere.
(4) And placing the obtained substrate with the telluride under the laser of a Raman spectrometer, positioning the position of the target telluride, selecting partial points at the edge, and testing a single spectrum. And selecting an edge area for laser scanning treatment, and testing the laser power. After the power is determined, the frame-selected target area is subjected to laser irradiation surface scanning treatment, and the tellurium alkene nano structure of the controllable local area can be obtained after the surface scanning is finished.
Preferably, the substrate of the step (1) is a silicon wafer having high temperature chemical inertness.
Preferably, the telluride drug of step (1) is prepared by a laboratory chemical vapor deposition (CVT) method including but not limited to ZrTe 5 、ZrTe 3 、ZrGeTe 4 。
Preferably, the thickness of the PDMS film of step (2) includes, but is not limited to, 50um,150um,300um.
Preferably, the thickness of the hexagonal boron nitride required in the step (3) is 18nm-90nm.
Preferably, the sample stage of step (3) is a customized closed container with a high transmittance glass slide filled with an inert gas, including but not limited to nitrogen, argon.
Preferably, the laser spot radius of the raman spectrometer of the step (4) is 500nm.
Preferably, the laser power of the step (4) is determined according to the thickness of the selected material, and the selected laser power of the few-layer telluride is 7mW-15mW.
Compared with the prior art, the invention has the beneficial effects that:
1. the tellurium alkene nano structure is successfully prepared by laser irradiation, and can be patterned.
2. Different from the existing tellurium preparation method, the invention provides a new method and thinking, namely, telluride is taken as a substrate, the material structure is changed by the local thermal effect of the high-energy focused laser beam irradiation, and then tellurium is generated.
3. The controllability is good, the laser irradiation light spot is small, the precise regulation and control of a local micro-area can be performed, and the tellurium alkene nano structure is generated in a target area.
4. The operation is simple, the time consumption is short, and the cost is low. The mechanical stripping transfer method and the laser irradiation method adopted in the invention are very simple, are convenient to operate, have short time consumption compared with physical vapor deposition, liquid phase synthesis, liquid phase stripping method and the like, and can rapidly realize the preparation of the tellurium alkene nano structure.
5. The materials involved in the invention are safe and environment-friendly, and do not generate substances harmful to the environment.
Detailed Description
The invention is further illustrated by the following examples.
Example 1
Firstly, the silicon wafer substrate is sequentially subjected to ultrasonic cleaning by acetone, isopropanol and deionized water to remove impurities on the surface of the silicon wafer substrate, and then the silicon wafer substrate is dried by an ear washing ball. The substrate is placed on a transfer table. Preparing a tape, and preparing ZrTe 5 And peeled directly to the PDMS film by tape. Then turning over the PDMS film, and precisely aligning the silicon wafer by using a transfer table to enable the ZrTe on the PDMS 5 And the sample is attached to the silicon wafer, and after the PDMS film is slowly lifted, the sample is successfully transferred to the target position of the silicon wafer. Will beThe substrate is placed on a transfer table. ZrTe for the above silicon wafer is then required to be subjected to hBN 5 And packaging. The method was as above, a tape was prepared again and hBN was peeled directly from PDMS film via the tape. Then turning over the PDMS film, and accurately aligning the silicon wafer of the previous step by using a transfer table to ensure that the hBN on the PDMS and the ZrTe on the silicon wafer 5 After the PDMS film is slowly lifted, the sample is successfully transferred to the target position of the silicon wafer and encapsulated with ZrTe 5 . The obtained ZrTe-containing alloy has ZrTe 5 The silicon wafer is placed under the laser of a Raman spectrometer to position the target ZrTe 5 Selecting a part of points at the edge to test a single spectrum. And selecting an edge area for laser scanning treatment, trying different laser powers, and testing a single spectrum until a tellurium Raman peak is obtained, so that the laser power is 10mW. After the power is determined, a target area is selected in a frame mode, the scanning size is set to be 2um multiplied by 5um for laser irradiation scanning treatment, and the tellurium alkene nano structure of the controllable local area can be obtained after the scanning is completed.
Example 2
Firstly, the silicon wafer substrate is sequentially subjected to ultrasonic cleaning by acetone, isopropanol and deionized water to remove impurities on the surface of the silicon wafer substrate, and then the silicon wafer substrate is dried by an ear washing ball. The substrate is placed on a transfer table. Preparing a tape, and preparing ZrTe 5 And peeled directly to the PDMS film by tape. Then turning over the PDMS film, and precisely aligning the silicon wafer by using a transfer table to enable the ZrTe on the PDMS 5 And the sample is attached to the silicon wafer, and after the PDMS film is slowly lifted, the sample is successfully transferred to the target position of the silicon wafer. And placing the transferred silicon wafer in a sample stage filled with inert gas. The sample stage is placed under the laser of a raman spectrometer. Positioning target ZrTe 5 Selecting a part of points at the edge to test a single spectrum. And selecting an edge area for laser scanning treatment, trying different laser powers, and testing a single spectrum until a tellurium Raman peak is obtained, so that the laser power is 13mW. After the power is determined, a target area is selected in a frame mode, the scanning size is set to be 2um multiplied by 5um for laser irradiation scanning treatment, and the tellurium alkene nano structure of the controllable local area can be obtained after the scanning is completed.
The foregoing examples illustrate only a few embodiments of the invention and are described in detail herein without thereby limiting the scope of the invention. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the invention, which are all within the scope of the invention. Accordingly, the scope of protection of the present invention is to be determined by the appended claims.
Claims (10)
1. A preparation method of a tellurium alkene nano structure is characterized by comprising the following steps: the method adopts laser irradiation, changes the structure of the material based on the local thermal effect generated under high power density, and prepares the locally adjustable tellurium alkene nano structure by taking telluride as a matrix.
2. The method of preparation according to claim 1, characterized in that it comprises the steps of:
(1) Firstly, sequentially carrying out ultrasonic cleaning on a substrate by acetone, isopropanol and deionized water to remove impurities on the surface of the substrate, and then drying the substrate by using an ear washing ball;
(2) A tape was prepared and the telluride was peeled off directly to the PDMS film via the tape. Then turning over the PDMS film, precisely aligning the substrate by using a transfer table, attaching the telluride on the PDMS film to the target substrate, and transferring the sample to the target substrate successfully after slowly lifting the PDMS film;
(3) Packaging the telluride;
(4) Placing the obtained substrate with the telluride under the laser of a Raman spectrometer, positioning the position of the target telluride, selecting partial points at the edge and testing a single spectrum of the substrate; selecting an edge area for laser scanning treatment, and testing the laser power; after the power is determined, the frame-selected target area is subjected to laser irradiation surface scanning treatment, and the tellurium alkene nano structure of the controllable local area can be obtained after the surface scanning is finished.
3. The method according to claim 1, characterized in that: the substrate of the step (1) is a silicon wafer with high-temperature chemical inertness.
4. The method according to claim 1, characterized in that: the telluride medicine in the step (2) is prepared by a laboratory chemical vapor deposition method and comprises ZrTe 5 、ZrTe 3 Or ZrGeTe 4 。
5. The method according to claim 1, characterized in that: the thickness of the PDMS film in the step (2) is 50um,150um or 300um.
6. The method according to claim 1, characterized in that: the packaging specific steps of the step (3) are as follows:
mode one: preparing an adhesive tape, and directly stripping a few layers of hexagonal boron nitride onto the PDMS film through the adhesive tape; then turning over the PDMS film, precisely aligning the substrate by using a transfer table, enabling a few layers of hexagonal boron nitride on the PDMS to be covered and attached on the telluride, and after slowly lifting the PDMS film, successfully transferring the two-dimensional material onto the telluride of the target substrate;
or mode two: and (3) directly placing the substrate with the telluride obtained in the step (2) in a closed sample stage with high light transmittance, wherein the closed sample stage is in an inert gas atmosphere.
7. The method according to claim 6, wherein: the thickness of the hexagonal boron nitride required in the step (3) is 18nm-90nm.
8. The method according to claim 6, wherein: the sample stage in the step (3) is a customized closed container filled with inert gas, namely nitrogen or argon, and provided with a slide with high light transmittance.
9. The method according to claim 1, characterized in that: and (3) the laser spot radius of the Raman spectrometer in the step (4) is 500nm.
10. The method according to claim 1, characterized in that: the laser power of the step (4) is determined according to the thickness of the selected material, and the laser power of the few-layer telluride is 7mW-15mW.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310260943.7A CN116443823A (en) | 2023-03-17 | 2023-03-17 | Preparation method of tellurium alkene nano structure |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310260943.7A CN116443823A (en) | 2023-03-17 | 2023-03-17 | Preparation method of tellurium alkene nano structure |
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| CN116443823A true CN116443823A (en) | 2023-07-18 |
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| CN202310260943.7A Pending CN116443823A (en) | 2023-03-17 | 2023-03-17 | Preparation method of tellurium alkene nano structure |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104152851A (en) * | 2014-08-15 | 2014-11-19 | 浙江工贸职业技术学院 | Method for manufacturing tellurium elementary substance nano materials of controllable structure |
| US20170352775A1 (en) * | 2016-06-03 | 2017-12-07 | University Of Utah Research Foundation | Methods for Creating Cadmium Telluride (CdTe) and Related Alloy Film |
| US20180362342A1 (en) * | 2017-06-19 | 2018-12-20 | Purdue Research Foundation | Substrate-free 2d tellurene |
| CN112853290A (en) * | 2021-01-05 | 2021-05-28 | 南昌大学 | Preparation method of large-area molybdenum disulfide film |
| CN114914109A (en) * | 2022-04-26 | 2022-08-16 | 浙江省冶金研究院有限公司 | Preparation method of copper-chromium-tellurium-copper-chromium composite contact |
-
2023
- 2023-03-17 CN CN202310260943.7A patent/CN116443823A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104152851A (en) * | 2014-08-15 | 2014-11-19 | 浙江工贸职业技术学院 | Method for manufacturing tellurium elementary substance nano materials of controllable structure |
| US20170352775A1 (en) * | 2016-06-03 | 2017-12-07 | University Of Utah Research Foundation | Methods for Creating Cadmium Telluride (CdTe) and Related Alloy Film |
| US20180362342A1 (en) * | 2017-06-19 | 2018-12-20 | Purdue Research Foundation | Substrate-free 2d tellurene |
| CN112853290A (en) * | 2021-01-05 | 2021-05-28 | 南昌大学 | Preparation method of large-area molybdenum disulfide film |
| CN114914109A (en) * | 2022-04-26 | 2022-08-16 | 浙江省冶金研究院有限公司 | Preparation method of copper-chromium-tellurium-copper-chromium composite contact |
Non-Patent Citations (1)
| Title |
|---|
| DUC ANH NGUYENA等: "Facile and controllable preparation of tellurium nanocrystals by laser irradiation", APPLIED SURFACE SCIENCE, vol. 581, no. 152398, 1 January 2022 (2022-01-01), pages 1 - 8 * |
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