CN116435360A - 半导体元件及其制作方法 - Google Patents

半导体元件及其制作方法 Download PDF

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CN116435360A
CN116435360A CN202211569054.0A CN202211569054A CN116435360A CN 116435360 A CN116435360 A CN 116435360A CN 202211569054 A CN202211569054 A CN 202211569054A CN 116435360 A CN116435360 A CN 116435360A
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active region
single diffusion
isolation structure
gate line
diffusion isolation
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林文凯
盛义忠
薛胜元
康智凯
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Blue Gun Semiconductor Co ltd
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Abstract

本发明公开一种半导体元件及其制作方法，其中制作半导体元件的方法为：主要先形成第一主动区以及第二主动区沿着一第一方向延伸于一基底上，然后形成第一单扩散隔离结构沿着一第二方向延伸并位于第一主动区以及第二主动区之间，之后再形成第一栅极线沿着第二方向延伸并交错第一主动区以及第二主动区，其中第一单扩散隔离结构设于第一主动区以及第二主动区之间的第一栅极线正下方。

Description

半导体元件及其制作方法
本申请是中国发明专利申请(申请号：201810048244.5，申请日：2018年01月18日，发明名称：半导体元件及其制作方法)的分案申请。
技术领域
本发明涉及一种制作半导体元件的方法，尤其是涉及一种于栅极线正下方形成单扩散隔离(single diffusion break,SDB)结构的方法。
背景技术
近年来，随着场效晶体管(field effect transistors,FETs)元件尺寸持续地缩小，现有平面式(planar)场效晶体管元件的发展已面临制作工艺上的极限。为了克服制作工艺限制，以非平面(non-planar)的场效晶体管元件，例如鳍状场效晶体管(fin fieldeffect transistor,Fin FET)元件来取代平面晶体管元件已成为目前的主流发展趋势。由于鳍状场效晶体管元件的立体结构可增加栅极与鳍状结构的接触面积，因此，可进一步增加栅极对于载流子通道区域的控制，从而降低小尺寸元件面临的漏极引发能带降低(draininduced barrier lowering,DIBL)效应，并可以抑制短通道效应(short channel effect,SCE)。再者，由于鳍状场效晶体管元件在同样的栅极长度下会具有更宽的通道宽度，因而可获得加倍的漏极驱动电流。甚而，晶体管元件的临界电压(threshold voltage)也可通过调整栅极的功函数而加以调控。
在现行的鳍状场效晶体管元件制作工艺中，鳍状结构周围形成浅沟隔离后通常会以蚀刻方式去除部分鳍状结构与浅沟隔离形成凹槽，然后填入绝缘物以形成单扩散隔离结构并将鳍状结构分隔为两部分。然而现今单扩散隔离结构与金属栅极的制作工艺在搭配上仍存在许多问题，因此如何改良现有鳍状场效晶体管制作工艺与架构即为现今一重要课题。
发明内容
本发明一实施例公开一种制作半导体元件的方法，其主要先形成第一主动区以及第二主动区沿着一第一方向延伸于一基底上，然后形成第一单扩散隔离结构沿着一第二方向延伸并位于第一主动区以及第二主动区之间，之后再形成第一栅极线沿着第二方向延伸并交错第一主动区以及第二主动区，其中第一单扩散隔离结构设于第一主动区以及第二主动区之间的第一栅极线正下方。
本发明另一实施例公开一种半导体元件，其主要包含：第一主动区以及第二主动区沿着第一方向延伸于一基底上；第一单扩散隔离结构沿着第二方向延伸并设于第一主动区以及第二主动区之间；以及第一栅极线沿着第二方向延伸并交错第一主动区以及第二主动区，其中第一单扩散隔离结构设于第一主动区以及第二主动区之间的第一栅极线正下方。
附图说明
图1为本发明一实施例的半导体元件的上视图；
图2为图1中沿着切线AA’方向制作半导体元件的剖面示意图；
图3为图1中沿着切线BB’方向制作半导体元件的剖面示意图。
主要元件符号说明
12 基底 14 主动区(有源区)
16 主动区 18 主动区
20 鳍状结构 22 浅沟隔离
24 凸块 26 单扩散隔离结构
28 单扩散隔离结构 30 单扩散隔离结构
32 单扩散隔离结构 34 单扩散隔离结构
36 单扩散隔离结构 38 单扩散隔离结构
40 单扩散隔离结构 42 单扩散隔离结构
44 单扩散隔离结构 46 栅极线
48 栅极线 50 栅极线
52 栅极线 54 栅极线
56 栅极线 58 栅极线
60 栅极线 62 栅极线
64 栅极线 66 栅极线
68 栅极线 70 栅极线
72 栅极介电层 74 栅极材料层
76 虚置隔离结构
具体实施方式
请参照图1至图3，其中图1为本发明优选实施例的一半导体元件的上视图，图2为图1中沿着切线AA’方向制作半导体元件的剖面示意图，图3则为图1中沿着切线BB’的剖面示意图。如图1至图3所示，首先提供一基底12，例如一硅基底或硅覆绝缘(SOI)基板，然后于基底12上定义至少一主动区，例如主动区14、主动区16以及主动区18，其中各主动区较佳沿着第一方向(例如X方向)延伸于基底12上。接着再形成多个鳍状结构20于各主动区14、16、18的基底12上以及浅沟隔离22环绕鳍状结构20。在本实施例中，各主动区14、16、18中所设置的鳍状结构20数量虽以四根为例，但其数量均可依据产品需求任意调整，并不局限于此。
依据本发明的优选实施例，鳍状结构20较佳通过侧壁图案转移(sidewall imagetransfer,SIT)等技术制得，其程序大致包括：提供一布局图案至电脑系统，并经过适当地运算以将相对应的图案定义于光掩模中。后续可通过光刻及蚀刻制作工艺，以形成多个等距且等宽的图案化牺牲层于基底上，使其个别外观呈现条状。之后依序施行沉积及蚀刻制作工艺，以于图案化牺牲层的各侧壁形成间隙壁。继以去除图案化牺牲层，并在间隙壁的覆盖下施行蚀刻制作工艺，使得间隙壁所构成的图案被转移至基底内，再伴随鳍状结构切割制作工艺(fin cut)而获得所需的图案化结构，例如条状图案化鳍状结构。需注意的是，一般形成进行鳍状结构切割制作工艺后部分设于主动区14、16、18外的基底12表面可能残留部分未被完全去除鳍状结构或凸块24，其高度可较佳大幅低于主动区14、16、18内的鳍状结构20高度但略高于基底12表面。
除此之外，鳍状结构20的形成方式又可包含先形成一图案化掩模(图未示)于基底12上，再经过一蚀刻制作工艺，将图案化掩模的图案转移至基底12中以形成鳍状结构20。另外，鳍状结构20的形成方式也可以先形成一图案化硬掩模层(图未示)于基底12上，并利用外延制作工艺于暴露出于图案化硬掩模层的基底12上成长出例如包含硅锗的半导体层，而此半导体层即可作为相对应的鳍状结构20。这些形成鳍状结构的实施例均属本发明所涵盖的范围。
然后形成一浅沟隔离(shallow trench isolation,STI)22环绕鳍状结构20，或从图1的上视图来看环绕主动区14、16、18。在本实施例中，形成浅沟隔离22的方式可先利用一可流动式化学气相沉积(flowable chemical vapor deposition,FCVD)制作工艺形成一氧化硅层于基底12上并完全覆盖鳍状结构20。接着利用蚀刻或化学机械研磨(chemicalmechanical polishing,CMP)制作工艺去除部分氧化硅层，使剩余的氧化硅层切齐或略高于鳍状结构20表面以形成浅沟隔离22，其中主动区14、主动区16以及主动区18的鳍状结构20较佳突出浅沟隔离22，同时浅沟隔离22完全覆盖凸块24。
随后形成多个单扩散隔离结构于基底12上，例如单扩散隔离结构26、28于主动区14的头尾两端、单扩散隔离结构30、32于主动区14旁、单扩散隔离结构34、36、38于主动区16内、单扩散隔离结构42、44于主动区18内，以及一单扩散隔离结构40由主动区16延伸至主动区18。
在本实施例中，形成单扩散隔离结构26、28、30、32、34、36、38、40、42、44的方法可先进行一光刻及蚀刻制作工艺沿着一第二方向(例如Y方向)分别去除主动区14、16、18内的鳍状结构20以形成同样沿着Y方向延伸的凹槽(图未示)，然后填入介电材料于凹槽内形成单扩散隔离结构。需注意的是，本实施例虽于形成浅沟隔离22之后才以另一道蚀刻分隔鳍状结构20形成单扩散隔离结构26、28、30、32、34、36、38、40、42、44，但不局限于此顺序，依据本发明其他实施例又可选择先以蚀刻形成前述用来定义单扩散隔离结构26、28、30、32、34、36、38、40、42、44的凹槽，接着再填入介电材料于凹槽内以及鳍状结构20周围，由此同时形成单扩散隔离结构26、28、30、32、34、36、38、40、42、44以及浅沟隔离22。换句话说，本实施例所公开的各单扩散隔离结构26、28、30、32、34、36、38、40、42、44的时间点可选择于浅沟隔离22制作完毕后或与浅沟隔离22一同形成，这几种变化型均属本发明所涵盖的范围。
另外以材料而言，本实施例所公开的单扩散隔离结构26、28、30、32、34、36、38、40、42、44可选择与隔离结构22包含相同材料或不同材料，且两者均可选自由例如氧化硅以及氮化硅所构成的群组。例如在本实施例中，浅沟隔离22较佳由氧化硅所构成且单扩散隔离结构26、28、30、32、34、36、38、40、42、44较佳由氮化硅所构成，但不局限于此材料组合，例如浅沟隔离22以及单扩散隔离结构26、28、30、32、34、36、38、40、42、44均可由氧化硅所构成，这些变化型均属本发明所涵盖的范围。
接着于鳍状结构20上形成栅极线46、48、50、52、54、56、58、60、62、64、66、68、70或栅极结构跨过主动区14、16、18以及浅沟隔离22。在本实施例中，栅极线46、48、50、52、54、56、58、60、62、64、66、68、70的制作方式可依据制作工艺需求以先栅极(gate first)制作工艺、后栅极(gate last)制作工艺的先高介电常数介电层(high-k first)制作工艺以及后栅极制作工艺的后高介电常数介电层(图未示)当作掩模进行一图案转移制作工艺，以单次蚀刻或逐次蚀刻步骤，去除部分栅极材料层74与部分栅极介电层72，然后剥除图案化光致抗蚀剂，以于浅沟隔离22以及鳍状结构20上形成各由图案化的栅极介电层72与图案化的栅极材料层74所构成的栅极线46、48、50、52、54、56、58、60、62、64、66、68、70。
从图1来看，各栅极线46、48、50、52、54、56、58、60、62、64、66、68、70较佳沿着与单扩散隔离结构26、28、30、32、34、36、38、40、42、44相同的第二方向(例如Y方向)延伸并交错主动区14、16、18以及鳍状结构20，其中各单扩散隔离结构26、28、30、32、34、36、38、40、42、44位于各栅极线46、48、50、52、54、56、58、60、62、64、66、68、70正下方，例如单扩散隔离结构26设于栅极线48正下方、单扩散隔离结构32、42设于栅极线50正下方、单扩散隔离结构34设于栅极线50正下方、单扩散隔离结构28、36、44设于栅极线60正下方、单扩散隔离结构30、38设于栅极线64正下方以及单扩散隔离结构40设于栅极线68正下方。
另外在本实施例中，主动区14、16、18、鳍状结构20以及栅极线46、48、50、52、54、56、58、60、62、64、66、68、70最外围的浅沟隔离22内可另设置虚置隔离结构76，其中虚置隔离结构76上不会有任何栅极线通过，虚置隔离结构76较佳与单扩散隔离结构26、28、30、32、34、36、38、40、42、44在同一道步骤完成，且虚置隔离结构76较佳与浅沟隔离22包含不同材料，例如本实施例的浅沟隔离22较佳包含氧化硅而虚置隔离结构76则较佳包含氮化硅。
以单扩散隔离结构、主动区以及栅极线等三者所设置的关系来看，单扩散隔离结构30是设于栅极线64正下方且不交错任何主动区以及鳍状结构20，单扩散隔离结构38是设于同一条栅极线64正下方且同时交错主动区16以及鳍状结构20，单扩散隔离结构40则是由主动区16一边缘延伸至主动区18一边缘并同时设于栅极线68正下方且交错主动区16、18及鳍状结构20。换句话说，单扩散隔离结构40是设于交错主动区16的栅极线68正下方、主动区16以及主动区18之间的栅极线68正下方以及交错主动区18的栅极线68正下方。
另外从图2以及图3的剖面来看，单扩散隔离结构26、28、30、32、34、36、38、40、42、44上表面较佳切齐浅沟隔离22上表面，但单扩散隔离结构26、28、30、32、34、36、38、40、42、44下表面则可依据单扩散隔离结构是否交错鳍状结构20而与浅沟隔离22下表面具有不同轮廓以及/或具有不同深度。举例来说，如图2所示，单扩散隔离结构30由于不交错任何主动区14、16、18或鳍状结构20，因此其底部较佳略低于旁边的浅沟隔离20底部且呈现平坦状，而单扩散隔离结构38由于在前述以蚀刻去除部分鳍状结构20形成凹槽时将鳍状结构20的轮廓向下蚀刻，因此其底部轮廓较佳呈现锯齿状。另外本实施例的单扩散隔离结构30底部虽约略切齐单扩散隔离结构38底部，但不局限于此，依据本发明其他实施例，单扩散隔离结构30底部又可选择略低或略高于单扩散隔离结构38底部，这些变化型均属本发明所涵盖的范围。
之后可进行后续金属氧化物半导体晶体管制作工艺，例如可于栅极线46、48、50、52、54、56、58、60、62、64、66、68、70周围形成间隙壁，在间隙壁两侧的鳍状结构20以及/或基底12中形成源极/漏极区域及/或外延层，并选择性于源极/漏极区域及/或外延层的表面形成一金属硅化物(图未示)。由于金属氧化物半导体晶体管的制作是本领域所熟知技术，在此不另加赘述。
以上所述仅为本发明的优选实施例，凡依本发明权利要求所做的均等变化与修饰，都应属本发明的涵盖范围。

Claims (10)

1.一种制作半导体元件的方法，其特征在于，包含：
形成一第一主动区以及一第二主动区沿着一第一方向延伸于一基底上；
形成一第一单扩散隔离结构沿着一第二方向延伸并位于该第一主动区以及该第二主动区之间；以及
形成一第一栅极线沿着该第二方向延伸并交错该第一主动区以及该第二主动区，其中该第一单扩散隔离结构设于该第一主动区以及该第二主动区之间的该第一栅极线正下方。
2.如权利要求1所述的方法，另包含形成一浅沟隔离环绕该第一主动区以及该第二主动区。
3.如权利要求2所述的方法，其中该第一单扩散隔离结构设于该浅沟隔离内。
4.如权利要求2所述的方法，其中该第一单扩散隔离结构以及该浅沟隔离包含相同材料。
5.如权利要求2所述的方法，其中该第一单扩散隔离结构以及该浅沟隔离包含不同材料。
6.如权利要求1所述的方法，其中该第一单扩散隔离结构由该第一主动区延伸至该第二主动区。
7.如权利要求1所述的方法，其中该第一单扩散隔离结构设于交错该第一主动区的该第一栅极线下方以及设于该第一主动区以及该第二主动区之间的该第一栅极线下方。
8.如权利要求1所述的方法，其中该第一单扩散隔离结构设于交错该第一主动区的该第一栅极线下方、该第一主动区以及该第二主动区之间的该第一栅极线下方以及交错该第二主动区的该第一栅极线下方。
9.如权利要求1所述的方法，另包含形成一第二栅极线沿着该第二方向延伸并设于该第一栅极线旁。
10.如权利要求9所述的方法，另包含形成一第二单扩散隔离结构于该第二栅极线正下方并位于该第一主动区旁。
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