CN116430498B - Infrared stealth coating with spectral selectivity and low emissivity as well as preparation method and application thereof - Google Patents
Infrared stealth coating with spectral selectivity and low emissivity as well as preparation method and application thereof Download PDFInfo
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- 239000011248 coating agent Substances 0.000 title claims abstract description 57
- 238000000576 coating method Methods 0.000 title claims abstract description 57
- 238000002360 preparation method Methods 0.000 title abstract description 10
- 230000003595 spectral effect Effects 0.000 title abstract description 8
- 239000000463 material Substances 0.000 claims abstract description 153
- 239000000758 substrate Substances 0.000 claims description 72
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 41
- 238000001659 ion-beam spectroscopy Methods 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 9
- 230000017525 heat dissipation Effects 0.000 abstract description 6
- 230000000737 periodic effect Effects 0.000 abstract description 4
- 230000000694 effects Effects 0.000 abstract description 3
- 230000008646 thermal stress Effects 0.000 abstract description 2
- 238000004544 sputter deposition Methods 0.000 description 71
- 238000010884 ion-beam technique Methods 0.000 description 38
- 238000004140 cleaning Methods 0.000 description 25
- 230000005855 radiation Effects 0.000 description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 10
- 238000005137 deposition process Methods 0.000 description 9
- 238000001228 spectrum Methods 0.000 description 8
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 6
- 239000008367 deionised water Substances 0.000 description 6
- 229910021641 deionized water Inorganic materials 0.000 description 6
- 238000001035 drying Methods 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- 238000002791 soaking Methods 0.000 description 6
- 238000004146 energy storage Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 239000007787 solid Substances 0.000 description 5
- 239000011232 storage material Substances 0.000 description 5
- 238000000137 annealing Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000013112 stability test Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
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- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3464—Sputtering using more than one target
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/083—Oxides of refractory metals or yttrium
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/10—Glass or silica
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
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Abstract
The application discloses an infrared stealth coating with spectral selectivity and low emissivity, and a preparation method and application thereof, and belongs to the technical field of functional film materials and preparation thereof. The application solves the technical problems of poor temperature resistance, radiant heat dissipation resistance and the like of the existing infrared stealth coating. The infrared stealth coating provided by the application has a periodic multilayer film structure, and the periodic multilayer film structure is composed of a high refractive index material layer and a low refractive index material layer, so that the effect of selective emission under an infrared band can be realized. The high refractive index material layer and the low refractive index material layer are both preferable window materials of an infrared band, the thermal matching property is good, the temperature of the coating in the infrared band can be reduced, the residual thermal stress is small, the adhesion between layers is excellent, the phenomenon of interpenetration is avoided, and the film layer is not easy to fall off.
Description
Technical Field
The invention relates to an infrared stealth coating with spectral selectivity and low emissivity, and a preparation method and application thereof, and belongs to the technical field of functional film materials and preparation thereof.
Background
With the increasing demand of stealth aircraft, stealth technologies have been developed continuously, and infrared stealth is an important category in stealth technologies, and has also gained more attention. Infrared stealth, the concept of which is to eliminate or reduce the difference in the radiation characteristics of two atmospheric windows (3-5 μm, 8-14 μm) in the mid-far infrared band between the target and the background. In the current infrared stealth technology, there are two common approaches: changing the infrared radiation band of the target or reducing its infrared radiation emittance, the latter of which is the most common technical means.
By Stefan-Boltzmann's law: m=epsilon σt 4, the infrared radiation emittance is related to the temperature T and the emissivity epsilon. Thus reducing the infrared radiation emittance M, achieving infrared stealth, can be achieved theoretically by reducing the target surface temperature or emissivity. In current stealth approaches, it is common to apply a low emissivity coating to the target surface.
The traditional infrared low-emissivity coating has lower emissivity in the whole infrared band, covers the window band of infrared detection, but does not have the characteristic of selective low emission. The full band reduction of infrared emissivity can affect the process of heat conduction, resulting in heat accumulation and temperature rise. In combination with Stefan-Boltzmann's law, an increase in temperature results in an increase in infrared radiation emittance, increasing detectability. It can be seen that the conventional infrared stealth coating brings about the compatibility problem of stealth and heat dissipation. Therefore, the ideal infrared stealth material should have the following performance characteristics: in the infrared detection window wave bands, namely 3-5 mu m wave bands and 8-14 mu m wave bands, the material has lower emissivity so as to reduce the detectability; the emissivity in the non-window wave band should be as high as possible, so that the heat can be timely diffused, and the heat dissipation requirement is met. Therefore, the development of the infrared stealth material with spectrum selective emission solves the contradiction between infrared stealth and radiation heat dissipation, and is a key for realizing infrared stealth.
Based on the above problems, there is an urgent need to provide a novel infrared stealth material with simple preparation and good infrared stealth performance and a preparation method thereof.
Disclosure of Invention
The invention provides an infrared stealth coating with low spectral selectivity and low emissivity, and a preparation method and application thereof, and aims to solve the technical problems that the existing infrared stealth coating reduces surface infrared radiation, increases reflection of visible light and microwave, is unfavorable for stealth, has poor temperature resistance, blocks radiation and heat dissipation and the like.
The technical scheme of the invention is as follows:
The invention aims to provide an infrared stealth coating with spectral selectivity and low emissivity, which is of a superposition structure of two layers, wherein each layer is formed by periodically and alternately superposing a high refractive index material layer and a low refractive index material layer, the central wavelength of the first layer is lambda 1, and the central wavelength of the second layer is lambda 2; wherein, lambda 1≤5μm,8≤λ2 is more than or equal to 3 and less than or equal to 14 mu m, the first layer film is positioned on the base material, and the second layer film is positioned on the first layer film.
Further defined, adjacent layers of high refractive index material and low refractive index material are bonded by chemical bonds.
Further defined, the first layer is formed by alternately stacking layers of high refractive index material and layers of low refractive index material for at least two cycles.
Further defined, the first film is formed by alternately stacking layers of high refractive index material and layers of low refractive index material for two cycles.
Further defined, the second layer is formed by alternately stacking layers of high refractive index material and layers of low refractive index material for at least two cycles.
Further defined, the second film is formed by alternately stacking layers of high refractive index material and layers of low refractive index material for one period.
Further defined, the high refractive index material layer has a refractive index of 3.8 and the low refractive index material layer has a refractive index of 1.4.
Further defined, the material of the high refractive index material layer is W or Mo, and the material of the low refractive index material layer is SiO 2 or HfO 2.
Further defined, the material of the high refractive index material layer is W, and the material of the low refractive index material layer is SiO 2.
Further defined, the first layer has a film thickness of 1/4.lambda 1 and the first layer has a film thickness of 1/4.lambda 2.
Further, the coating has an emissivity of 0.1 or less in an infrared window band of 3 to 5 μm and 8 to 14 μm and an emissivity of 0.6 or more in a non-window band of 5 to 8 μm.
The second object of the present invention is to provide a method for preparing the infrared stealth coating with spectral selectivity and low emissivity, which comprises the following steps:
step 1, cleaning a substrate: preparing a substrate material, and cleaning and drying the substrate material;
Step 2, preparing a low refractive index material layer on a substrate material by adopting an ion beam sputtering deposition process, and obtaining a corresponding thickness by controlling sputtering time;
step 3, preparing a high refractive index material layer on the surface of the low refractive index material layer by adopting an ion beam sputtering deposition process, and obtaining corresponding thickness by controlling sputtering time;
Step 4, repeating the step 2 and the step 3 to obtain a first layer film formed by periodically and alternately superposing the low refractive index material layer and the high refractive index material layer;
Step 5, adopting an ion beam sputtering deposition process to continuously prepare a low refractive index material layer, and obtaining corresponding thickness by controlling sputtering time;
Step 6, preparing a high refractive index material layer on the surface of the low refractive index material layer by adopting an ion beam sputtering deposition process, and obtaining corresponding thickness by controlling sputtering time;
And 7, repeating the step 5 and the step 6 to obtain a second layer film formed by periodically and alternately superposing the low-refractive-index material layer and the high-refractive-index material layer, and completing the preparation of the infrared stealth coating with spectral selectivity and low emissivity.
Further defined, the substrate is an aluminum plate.
Further defined, the substrate cleaning process is: firstly, deionized water is used for cleaning impurities on the surface of a substrate material, and then absolute ethyl alcohol is used for soaking the substrate material in an ultrasonic cleaner for cleaning.
Further defined, the ion beam sputter deposition conditions for preparing the low refractive index material layer are: the temperature of the substrate is 25 ℃, the beam current of the ion beam is 35mA, and the sputtering time is 11-19 min.
Further defined, the ion beam sputter deposition conditions for preparing the high refractive index material layer are: the temperature of the substrate is 25 ℃, the beam current of the ion beam is 25mA, and the sputtering time is 15-23 min.
Further defined, the high refractive index material layer and the low refractive index material layer are prepared using an ion beam coater.
Compared with the prior art, the application has the following beneficial effects:
(1) The infrared stealth coating provided by the invention has a periodic multilayer film structure, the periodic multilayer film structure is composed of the high refractive index material layer and the low refractive index material layer, the effect of selective emission in an infrared band is realized, the high refractive index material layer and the low refractive index material layer are both preferential window materials in the infrared band, the thermal matching property is good, the temperature of the coating in the infrared band can be effectively reduced, the residual thermal stress is small, the adhesive force between layers is good, the phenomenon of interpenetration is avoided, and the film layer is not easy to fall off.
(2) In addition, the water contact angle of the infrared stealth coating prepared by the method is 84 degrees, the contact angle of the infrared stealth coating is slightly increased compared with that of an aluminum sheet (54 degrees) of a substrate, the wetting degree is slightly reduced, and the surface cleanliness of the coating is further improved.
(3) Finally, the infrared stealth coating prepared by the invention is subjected to thermal stability test, the emissivity spectrum of the coating is not obviously changed after annealing for 5 hours under vacuum condition, the infrared emissivity of a non-atmospheric window is still maintained at a further proof that the coating has good thermal stability, and the problems of poor temperature resistance, radiation heat dissipation resistance and the like of the existing infrared stealth coating can be better solved.
Drawings
FIG. 1 is a schematic structural diagram of the infrared stealth coating prepared in example 1;
FIG. 2 is a graph of simulated emissivity spectra of the infrared stealth coating prepared in example 1 in the 3.0-14.0 μm band;
FIG. 3 is a graph of experimental emissivity spectra of the infrared stealth coating prepared in example 1 in the 3.0-14.0 μm band;
FIG. 4 is a surface SEM photograph of an infrared stealth coating prepared according to example 1;
FIG. 5 is a graph showing water contact angle measurements of the substrate of example 1;
FIG. 6 is a graph of water contact angle measurements of the surface of the infrared stealth coating prepared in example 1;
FIG. 7 is a graph of emissivity spectra of the original infrared stealth coating sample prepared in example 1 and the sample after annealing at 500℃for 5 hours under vacuum in the 3.0 to 14.0 μm band.
Detailed Description
The present invention will be described in further detail with reference to the following examples in order to make the objects, technical solutions and advantages of the present invention more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
The experimental methods used in the following examples are conventional methods unless otherwise specified. The materials, reagents, methods and apparatus used, without any particular description, are those conventional in the art and are commercially available to those skilled in the art.
Example 1:
The infrared stealth coating structure prepared in this embodiment is shown in fig. 1, and the specific first layer film is formed by alternately stacking a low refractive index material layer (SiO 2 layer) and a high refractive index material layer (W layer) for two periods, and the second layer film is formed by alternately stacking a low refractive index material layer (SiO 2 layer) and a high refractive index material layer (W layer) for one period. And the thicknesses of the first layers of the low refractive index material layers (SiO 2 layers) and the high refractive index material layers (W layers) which are alternately stacked are 200+ -10 nm, 440+ -10 nm, 200+ -10 nm, 700+ -10 nm in order from the substrate end. The thicknesses of the low refractive index material layer (SiO 2 layer) and the high refractive index material layer (W layer) constituting the second layer film were 340±10nm and 110±10nm, respectively.
The specific process for preparing the solid energy storage material particles in the embodiment is carried out according to the following steps:
Step 1, cleaning a substrate: preparing a used substrate material Al, and cleaning the used substrate material before sputtering; firstly, cleaning surface impurities by using deionized water, soaking in absolute ethyl alcohol, cleaning for 20min in an ultrasonic cleaner, drying the surface by using an electric hair drier, and placing an Al substrate on a sample table for fixing;
step 2, preparing a SiO 2 material layer on a substrate material by adopting an ion beam sputtering deposition process by using an ion beam coating machine, wherein sputtering conditions comprise: the temperature of the substrate is 25 ℃, the beam current of the ion beam is 25mA, and the sputtering time is 15min;
And 3, continuously preparing a W material layer on the surface of the SiO 2 material layer, wherein sputtering conditions comprise: the temperature of the substrate is 25 ℃, the beam current of the ion beam is 35mA, and the sputtering time is 19min;
And 4, continuously preparing a SiO 2 material layer on the surface of the W material layer, wherein sputtering conditions comprise: the temperature of the substrate is 25 ℃, the beam current of the ion beam is 25mA, and the sputtering time is 15min;
And 5, continuously preparing a W material layer on the surface of the SiO 2 material layer, wherein sputtering conditions comprise: the temperature of the substrate is 25 ℃, the beam current of the ion beam is 35mA, and the sputtering time is 30min;
and 6, continuously preparing a SiO 2 material layer on the surface of the W material layer, wherein sputtering conditions comprise: the temperature of the substrate is 25 ℃, the beam current of the ion beam is 25mA, and the sputtering time is 26min;
And 7, continuously preparing a W material layer on the surface of the SiO 2 material layer, wherein sputtering conditions comprise: the substrate temperature is 25 ℃, the ion beam current is 35mA, and the sputtering time is 5min, so that the infrared stealth coating is obtained.
Example 2:
the specific process for preparing the solid energy storage material particles in the embodiment is carried out according to the following steps:
Step 1, cleaning a substrate: preparing a used substrate material Al, and cleaning the used substrate material before sputtering; firstly, cleaning surface impurities by using deionized water, soaking in absolute ethyl alcohol, cleaning for 20min in an ultrasonic cleaner, drying the surface by using an electric hair drier, and placing an Al substrate on a sample table for fixing;
Step 2, preparing a SiO 2 material layer on a substrate material by adopting an ion beam sputtering deposition process by using an ion beam coating machine, wherein sputtering conditions comprise: the temperature of the substrate is 25 ℃, the beam current of the ion beam is 25mA, and the sputtering time is 13min;
And 3, continuously preparing a W material layer on the surface of the SiO 2 material layer, wherein sputtering conditions comprise: the temperature of the substrate is 25 ℃, the beam current of the ion beam is 35mA, and the sputtering time is 17min;
And 4, continuously preparing a SiO 2 material layer on the surface of the W material layer, wherein sputtering conditions comprise: the temperature of the substrate is 25 ℃, the beam current of the ion beam is 25mA, and the sputtering time is 13min;
And 5, continuously preparing a W material layer on the surface of the SiO 2 material layer, wherein sputtering conditions comprise: the temperature of the substrate is 25 ℃, the beam current of the ion beam is 35mA, and the sputtering time is 28min;
And 6, continuously preparing a SiO 2 material layer on the surface of the W material layer, wherein sputtering conditions comprise: the temperature of the substrate is 25 ℃, the beam current of the ion beam is 25mA, and the sputtering time is 24min;
And 7, continuously preparing a W material layer on the surface of the SiO 2 material layer, wherein sputtering conditions comprise: the substrate temperature is 25 ℃, the ion beam current is 35mA, and the sputtering time is 4min, so that the infrared stealth coating is obtained.
Example 3:
the specific process for preparing the solid energy storage material particles in the embodiment is carried out according to the following steps:
Step 1, cleaning a substrate: preparing a used substrate material Al, and cleaning the used substrate material before sputtering; firstly, cleaning surface impurities by using deionized water, soaking in absolute ethyl alcohol, cleaning for 20min in an ultrasonic cleaner, drying the surface by using an electric hair drier, and placing an Al substrate on a sample table for fixing;
Step 2, preparing a SiO 2 material layer on a substrate material by adopting an ion beam sputtering deposition process by using an ion beam coating machine, wherein sputtering conditions comprise: the temperature of the substrate is 25 ℃, the beam current of the ion beam is 25mA, and the sputtering time is 11min;
And 3, continuously preparing a W material layer on the surface of the SiO 2 material layer, wherein sputtering conditions comprise: the temperature of the substrate is 25 ℃, the beam current of the ion beam is 35mA, and the sputtering time is 15min;
And 4, continuously preparing a SiO 2 material layer on the surface of the W material layer, wherein sputtering conditions comprise: the temperature of the substrate is 25 ℃, the beam current of the ion beam is 25mA, and the sputtering time is 11min;
And 5, continuously preparing a W material layer on the surface of the SiO 2 material layer, wherein sputtering conditions comprise: the temperature of the substrate is 25 ℃, the beam current of the ion beam is 35mA, and the sputtering time is 26min;
And 6, continuously preparing a SiO 2 material layer on the surface of the W material layer, wherein sputtering conditions comprise: the temperature of the substrate is 25 ℃, the beam current of the ion beam is 25mA, and the sputtering time is 22min;
And 7, continuously preparing a W material layer on the surface of the SiO 2 material layer, wherein sputtering conditions comprise: the substrate temperature is 25 ℃, the ion beam current is 35mA, and the sputtering time is 3min, so that the infrared stealth coating is obtained.
Example 4:
the specific process for preparing the solid energy storage material particles in the embodiment is carried out according to the following steps:
Step 1, cleaning a substrate: preparing a used substrate material Al, and cleaning the used substrate material before sputtering; firstly, cleaning surface impurities by using deionized water, soaking in absolute ethyl alcohol, cleaning for 20min in an ultrasonic cleaner, drying the surface by using an electric hair drier, and placing an Al substrate on a sample table for fixing;
Step 2, preparing a SiO 2 material layer on a substrate material by adopting an ion beam sputtering deposition process by using an ion beam coating machine, wherein sputtering conditions comprise: the temperature of the substrate is 25 ℃, the beam current of the ion beam is 25mA, and the sputtering time is 17min;
and 3, continuously preparing a W material layer on the surface of the SiO 2 material layer, wherein sputtering conditions comprise: the temperature of the substrate is 25 ℃, the beam current of the ion beam is 35mA, and the sputtering time is 21min;
And 4, continuously preparing a SiO 2 material layer on the surface of the W material layer, wherein sputtering conditions comprise: the temperature of the substrate is 25 ℃, the beam current of the ion beam is 25mA, and the sputtering time is 17min;
And 5, continuously preparing a W material layer on the surface of the SiO 2 material layer, wherein sputtering conditions comprise: the temperature of the substrate is 25 ℃, the beam current of the ion beam is 35mA, and the sputtering time is 32min;
and 6, continuously preparing a SiO 2 material layer on the surface of the W material layer, wherein sputtering conditions comprise: the temperature of the substrate is 25 ℃, the beam current of the ion beam is 25mA, and the sputtering time is 28min;
and 7, continuously preparing a W material layer on the surface of the SiO 2 material layer, wherein sputtering conditions comprise: the substrate temperature is 25 ℃, the ion beam current is 35mA, and the sputtering time is 6min, so that the infrared stealth coating is obtained.
Example 5:
the specific process for preparing the solid energy storage material particles in the embodiment is carried out according to the following steps:
Step 1, cleaning a substrate: preparing a used substrate material Al, and cleaning the used substrate material before sputtering; firstly, cleaning surface impurities by using deionized water, soaking in absolute ethyl alcohol, cleaning for 20min in an ultrasonic cleaner, drying the surface by using an electric hair drier, and placing an Al substrate on a sample table for fixing;
Step 2, preparing a SiO 2 material layer on a substrate material by adopting an ion beam sputtering deposition process by using an ion beam coating machine, wherein sputtering conditions comprise: the temperature of the substrate is 25 ℃, the beam current of the ion beam is 25mA, and the sputtering time is 19min;
And 3, continuously preparing a W material layer on the surface of the SiO 2 material layer, wherein sputtering conditions comprise: the temperature of the substrate is 25 ℃, the beam current of the ion beam is 35mA, and the sputtering time is 23min;
And 4, continuously preparing a SiO 2 material layer on the surface of the W material layer, wherein sputtering conditions comprise: the temperature of the substrate is 25 ℃, the beam current of the ion beam is 25mA, and the sputtering time is 19min;
And 5, continuously preparing a W material layer on the surface of the SiO 2 material layer, wherein sputtering conditions comprise: the temperature of the substrate is 25 ℃, the beam current of the ion beam is 35mA, and the sputtering time is 34min;
And 6, continuously preparing a SiO 2 material layer on the surface of the W material layer, wherein sputtering conditions comprise: the temperature of the substrate is 25 ℃, the beam current of the ion beam is 25mA, and the sputtering time is 30min;
And 7, continuously preparing a W material layer on the surface of the SiO 2 material layer, wherein sputtering conditions comprise: the substrate temperature is 25 ℃, the ion beam current is 35mA, and the sputtering time is 7min, so that the infrared stealth coating is obtained.
Effect example:
The infrared stealth coating obtained in example 1 was characterized for properties as follows:
(1) The emissivity of the film was simulated by simulation software, and the simulated emissivity spectrum of the infrared stealth coating obtained in example 1 is shown in fig. 2, and as can be seen from fig. 2, the emissivity of the coating in the infrared window bands of 3-5 μm and 8-14 μm is only about 0.06, and the emissivity in the non-window band of 5-8 μm is about 0.75.
(2) The emissivity of the film was simulated by using an infrared emissivity test spectrometer, and the emissivity spectrum of the infrared stealth coating obtained in example 1 is shown in fig. 3, and as can be seen from fig. 3, the emissivity of the coating is only about 0.18 in the infrared window wave band of 3-5 μm and 8-14 μm, and the emissivity of the coating reaches about 0.75 in the non-window wave band of 5-8 μm.
(3) Characterization of the surface microtopography of the infrared stealth coating obtained in example 1, as shown in fig. 4, it can be seen from fig. 4 that the surface of the coating is smooth, uniform and dense, and has no obvious holes and defects, mainly because the thickness of each film layer in example 1 is smaller, the film layer formed in the subsequent process has less influence on the surface of the film layer formed in the previous process, so that the bonding between the film layers is more uniform, and the thickness of the overall coating is more uniform.
(4) The substrate used in example 1 and the surface of the obtained infrared stealth coating were subjected to a water contact angle test, and as shown in fig. 5 and 6, the contact angle of the base Al was 54 °, and the contact angle of the infrared stealth coating was increased to 84 °.
(5) The infrared stealth coating obtained in example 1 was subjected to a thermal stability test, and as shown in fig. 7, as can be seen from fig. 7, the emissivity spectrum of the infrared stealth coating after vacuum annealing at 500 ℃ for 5 hours was not significantly changed.
While the invention has been described in terms of preferred embodiments, it is not intended to be limited thereto, but rather to enable any person skilled in the art to make various changes and modifications without departing from the spirit and scope of the present invention, which is therefore to be limited only by the appended claims.
Claims (2)
1. The infrared stealth coating is characterized by being of a superposition structure of two layers, each layer is formed by periodically and alternately superposing a high refractive index material layer and a low refractive index material layer, the central wavelength of the first layer is lambda 1, and the central wavelength of the second layer is lambda 2; wherein, lambda 1≤5μm,8≤λ2 is more than or equal to 3 and less than or equal to 14 mu m, the first layer of film is positioned on the base material, and the second layer of film is positioned on the first layer of film;
The first layer of film sequentially comprises a low refractive index material layer SiO 2 layer, a high refractive index material layer W layer, a low refractive index material layer SiO 2 layer and a high refractive index material layer W layer from the position close to the substrate end;
The thicknesses of the SiO 2 layers and the W layers of the high-refractive-index material layers which are alternately overlapped by the first layer film are 200+/-10 nm, 440+/-10 nm, 200+/-10 nm and 700+/-10 nm in sequence from the position close to the substrate end;
The second film layer is sequentially provided with a low refractive index material layer SiO 2 layer and a high refractive index material layer W layer from the position close to the substrate end;
The thicknesses of the SiO 2 layer and the W layer of the low refractive index material layer and the W layer of the high refractive index material layer of the second layer film are 340+/-10 nm and 110+/-10 nm respectively;
The refractive index of the high refractive index material layer is 3.8, and the refractive index of the low refractive index material layer is 1.4.
2. A method of producing an infrared stealth coating as claimed in claim 1, wherein the high refractive index material layer and the low refractive index material layer are produced by an ion beam sputter deposition process.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104865618A (en) * | 2015-05-08 | 2015-08-26 | 中国人民解放军国防科学技术大学 | Infrared stealth thin film with spectral selectivity and low emission rate and preparation method of infrared stealth thin film |
| CN108828695A (en) * | 2018-06-25 | 2018-11-16 | 中国人民解放军国防科技大学 | Spectrum selective emission material for infrared stealth and preparation method thereof |
| CN111103643A (en) * | 2019-12-26 | 2020-05-05 | 中国人民解放军国防科技大学 | Selective-emission infrared stealth material and preparation method thereof |
| CN112882227A (en) * | 2021-01-19 | 2021-06-01 | 滁州学院 | Design and preparation method of infrared spectrum selective low-emissivity material |
| US20230057101A1 (en) * | 2020-01-29 | 2023-02-23 | 3M Innovative Properties Company | Multilayer film |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104865618A (en) * | 2015-05-08 | 2015-08-26 | 中国人民解放军国防科学技术大学 | Infrared stealth thin film with spectral selectivity and low emission rate and preparation method of infrared stealth thin film |
| CN108828695A (en) * | 2018-06-25 | 2018-11-16 | 中国人民解放军国防科技大学 | Spectrum selective emission material for infrared stealth and preparation method thereof |
| CN111103643A (en) * | 2019-12-26 | 2020-05-05 | 中国人民解放军国防科技大学 | Selective-emission infrared stealth material and preparation method thereof |
| US20230057101A1 (en) * | 2020-01-29 | 2023-02-23 | 3M Innovative Properties Company | Multilayer film |
| CN112882227A (en) * | 2021-01-19 | 2021-06-01 | 滁州学院 | Design and preparation method of infrared spectrum selective low-emissivity material |
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