CN108828695A - Spectrum selective emission material for infrared stealth and preparation method thereof - Google Patents
Spectrum selective emission material for infrared stealth and preparation method thereof Download PDFInfo
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- CN108828695A CN108828695A CN201810663194.1A CN201810663194A CN108828695A CN 108828695 A CN108828695 A CN 108828695A CN 201810663194 A CN201810663194 A CN 201810663194A CN 108828695 A CN108828695 A CN 108828695A
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B19/00—Layered products comprising a layer of natural mineral fibres or particles, e.g. asbestos, mica
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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Abstract
The invention discloses a spectrum selective emission material for infrared stealth, which is of a layered structure, wherein the layered structure comprises a substrate, and a metal layer and an infrared transparent medium layer which are alternately overlaid and coated on the surface of the substrate. The invention also correspondingly provides a preparation method of the spectral selectivity emission material. The spectrum selective emission material of the invention is obtained by the design and optimization of the metal layer and the infrared transparent medium layer and the theoretical analysis and calculation: the emissivity of the infrared window wave band of 3.0-5.0 μm and 8.0-14.0 μm can reach below 0.20 and 0.25 respectively, and the emissivity of the non-window wave band of 5.0-8.0 μm can reach above 0.80, the spectrum selective emission material realizes infrared selective emission, gives consideration to the requirements of low emissivity and radiation heat dissipation, and has important significance for better realizing infrared stealth.
Description
Technical field
The invention belongs to technical field of function materials more particularly to a kind of spectral selection emissive material and its preparation sides
Method.
Background technique
One of military technology as tip, stealth technology is receive more and more attention, for winning modern war
It is extremely important.In various stealth technologies, infrared stealth is in occupation of highly important status.Infrared stealth,
Concept refer to elimination or reduce two atmospheric windows of mid and far infrared wave band between target and background (3.0 μm~5.0 μm, 8.0 μm~
14.0 μm) difference of radiation characteristic.
Currently, the infra-red radiation emittance for reducing target is to realize the most important mode of infrared stealth.According to Stefan-
Boltzmann law：M=ε σ T4, infra-red radiation emittance is related to temperature T and emissivity ε.Therefore infra-red radiation outgoing is reduced
Degree realizes infrared stealth, can theoretically be realized by reducing target surface temperature or emissivity.Currently, being applied in target surface
It covers infrared low-emissivity coating and realizes that infrared stealth is the most common means.
Traditional infrared low-emissivity coating all has low-launch-rate in entire infrared band, covers infrared acquisition
3.0 μm~5.0 μm and 8.0 μm~14.0 mu m wavebands.But the low-launch-rate of infrared full-wave section can reduce the efficiency of heat radiation,
Heat is caused to gather, temperature rises.In conjunction with Stefan-Boltzmann law, the raising of temperature also results in infra-red radiation and goes out
The increase for degree of penetrating, increases detectivity.It can be seen that traditional infrared low-emissivity camouflage coating brings stealthy and heat dissipation
Incompatibility problem, the increase of infra-red radiation emittance caused by failing effectively to avoid since temperature raises.Therefore, ideal red
The performance characteristics for the spectral selection transmitting that outer stealth material should have.Specifically：In infrared acquisition window wave band, i.e.,
3.0 μm~5.0 μm and 8.0 μm~14.0 mu m wavebands, material have low-launch-rate, and avoid detection detection；And in non-window wave
Section, material have high emissivity, and the efficiency for improving heat radiation spreads heat in time, achievees the purpose that radiation cooling.I.e. from drop
It sets out in terms of low-launch-rate and reduction temperature two, realizes the reduction of detecting band infra-red radiation emittance, and then realize infrared hidden
Body.Therefore, the Infrared stealthy materials for having the characteristics that selectivity emits are developed, realizes that low-launch-rate is compatible with heat loss through radiation, is
Realize the key of infrared stealth.
In recent years, researcher is increasingly mature for the research that is modulated of spectral emissions radiation, and Thermophotovoltaic,
The fields such as radiation refrigeration technology achieve breakthrough.But the material with spectral selection transmitting is applied to infrared hidden
The research of body technical field and application are still immature.Chinese patent CN104865617A discloses a kind of low with spectral selection
Infrared stealth film of emissivity and preparation method thereof, the infrared stealth film include silicon substrate and are alternately coated on silicon substrate table
The high refractive index material layer (Ge) and low refractive index material layer (MgF in face2), this infrared stealth membrane structure is complicated, and thickness is thicker,
It is not easy to large area preparation, and affects the use of Infrared stealthy materials using easily causing material layer to fall off under hot environment.It grinds
Study carefully and develops that a kind of structure is simple, have the characteristics that spectral selection transmitting, the material that can be used for infrared stealth has wide city
Field prospect.
Summary of the invention
The technical problem to be solved by the present invention is to overcome the shortcomings of to mention in background above technology and defect, one kind is provided
Structure is simple, spectral selection emissive material that is easily prepared, can be used for infrared stealth and preparation method thereof.To solve above-mentioned skill
Art problem, technical solution proposed by the present invention are：
A kind of spectral selection emissive material can be used for infrared stealth, the spectral selection emissive material are stratiform knot
Structure, layered structure include substrate and are alternately superimposed metal layer and infrared transparent dielectric layer coated on the substrate surface.
Above-mentioned layer structure be can the material that is regulated and controled of the transmitting radiation feature to infrared spectroscopy, final realization is at 3.0 μm~5.0 μm
Low-launch-rate is all had with 8.0 μm~14.0 mu m wavebands, and there is high emissivity in 5.0 μm~8.0 mu m wavebands.
In above-mentioned spectral selection emissive material, it is preferred that the metal layer is greater than in the extinction coefficient of 3~14 mu m wavebands
5, the infrared transparent dielectric layer is greater than 30% in the infrared transmittivity of 3~14 mu m wavebands.Extinction coefficient and transmitance are at this
In range, it can make structure that there is the spectral characteristic of better choice transmitting.
In above-mentioned spectral selection emissive material, it is preferred that the material of the substrate is silicon, glass, metal, macromolecule material
Any one of material, the metal layer are any one of nickel, chromium, gold, silver, copper, tungsten, aluminium, platinum, palladium, and the infrared transparent is situated between
Matter layer is any one of silicon, germanium, tellurium, zinc sulphide, zinc selenide, magnesium fluoride, lithium fluoride, barium fluoride, calcirm-fluoride.Above layers material
Thermal matching is preferable between material, and each interlayer has good adhesive force, and film layer is not easily to fall off.
In above-mentioned spectral selection emissive material, it is preferred that the number of plies of the spectral selection emissive material is 3~8 layers.
In above-mentioned spectral selection emissive material, it is preferred that with substrate contact be metal layer in layered structure, so
Face successively alternately coats infrared transparent dielectric layer, metal layer on the metal layer afterwards.
In above-mentioned spectral selection emissive material, it is preferred that the metal layer with substrate contact with a thickness of 50-
300nm, other metal layers with a thickness of 1~50nm, the infrared transparent dielectric layer with a thickness of 100~900nm.In the present invention
The change of thicknesses of layers or the number of plies change, and the spectral characteristic for making it possible to material obtained in the present invention deviates the present invention in advance
If target, control the thickness control of each layer within the above range, the available better spectral selection emissive material of effect.
As a general technical idea, the present invention also provides a kind of preparation sides of above-mentioned spectral selection emissive material
Method includes the following steps：Coating metal layer and infrared transparent dielectric layer are alternately superimposed in substrate surface using sedimentation.
In above-mentioned preparation method, it is preferred that the metal layer is deposited using electron beam evaporation or magnetron sputtering method, described red
Outer transparent dielectric layer is using electron beam evaporation, magnetron sputtering, chemical vapor deposition or atomic layer deposition method deposition.
In above-mentioned preparation method, it is preferred that the substrate is cleaned before coating, and the cleaning first uses deionized water
Cleaning, then be immersed in dehydrated alcohol and be cleaned by ultrasonic.
In the present invention using the high reflection of metal layer, strong absorption characteristic, the high transparency characteristic of infrared transparent dielectric layer and
Geometric optical theory, makes 3.0 μm~5.0 μm and 8.0 μm~14.0 μm of electromagnetic wave cannot be introduced into the gold with strong absorption characteristic
Belong in layer, to realize structure in the low-launch-rate of the two wave bands；And in 5.0 μm~8.0 mu m wavebands, electromagnetic wave can enter
Metal layer realizes the high emissivity of the wave band using the strong absorption characteristic of metal layer.Above-mentioned three passes through structure after combining again
A kind of spectral selection emissive material that can be used for infrared stealth can be obtained in design.
In above-mentioned spectral selection emissive material, the spectral selection emissive material is at 3.0 μm~5.0 μm and 8.0 μm
~14.0 μm of infrared window wave band realizes low-launch-rate, and emissivity is respectively 0.20 and 0.25 or less；The optical electivity
Property emissive material 5.0 μm~8.0 μm non-window wave band realize high emissivity, emissivity be 0.80 or more.
Compared with the prior art, the advantages of the present invention are as follows：
1, spectral selection emissive material of the invention, by the design and optimization of metal layer and infrared transparent dielectric layer,
The theoretical analysis and calculating are learnt：It is reachable respectively in 3.0 μm~5.0 μm and 8.0 μm~14.0 μm infrared window wave band emissivity
0.20 and 0.25 hereinafter, the spectral selection emits material in 5.0 μm~8.0 μm non-window wave band emissivity up to 0.80 or more
Material realizes infrared selectivity transmitting, has taken into account the requirement of low-launch-rate and heat loss through radiation, realizes infrared stealth tool to better
There is important meaning.
2, the structure of spectral selection emissive material of the invention is simple, is convenient for large area preparation and application.
3, spectral selection emissive material preparation process simple possible of the invention, reproducible, equipment requirement is low.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is the present invention
Some embodiments for those of ordinary skill in the art without creative efforts, can also basis
These attached drawings obtain other attached drawings.
Fig. 1 is the spectral selection emissive material structural schematic diagram in embodiment 1.
Fig. 2 is emissivity spectrogram (reason of the spectral selection emissive material in embodiment 1 in 3.0 μm~14.0 mu m wavebands
By simulation value).
Fig. 3 be in embodiment 1 the spectral selection emissive material that is prepared in the emissivity of 3.0 μm~14.0 mu m wavebands
Spectrogram (measured value).
Specific embodiment
To facilitate the understanding of the present invention, the present invention is made below in conjunction with Figure of description and preferred embodiment more complete
Face meticulously describes, but the protection scope of the present invention is not limited to the following specific embodiments.
Unless otherwise defined, all technical terms used hereinafter and the normally understood meaning of those skilled in the art
It is identical.Technical term used herein is intended merely to the purpose of description specific embodiment, is not intended to the limitation present invention
Protection scope.
Unless otherwise specified, various raw material, reagent, the instrument and equipment etc. used in the present invention can pass through city
Field is commercially available or can be prepared by existing method.
Embodiment 1：
A kind of spectral selection emissive material can be used for infrared stealth as shown in Figure 1, the spectral selection emissive material
For can the layer structure that is regulated and controled of the transmitting radiation feature to infrared spectroscopy, the layer structure is using glass as substrate, glass table
Face is alternately coated with metal layer and infrared transparent dielectric layer.
In the spectral selection emissive material of the present embodiment, metal layer is Al layers, and infrared transparent dielectric layer is Si.This implementation
The material of example is formed by metal layer and infrared transparent dielectric layer alternating superimposion, and totally four layers.It is followed successively by since the substrate layer
Al layers of 90nm, Si layers of 720nm, Al layers of 20nm, Si layers of 420nm, the overall thickness of entire layer structure are 1250.0nm.
In the present embodiment, the infrared transmittivity of 720nm and 420nm infrared transparent dielectric layer Si be higher than 40%, 20nm and
The extinction coefficient of 90nm metal layer A l is greater than 5, less than 40.
The preparation method of spectral selection emissive material in the present embodiment, the deposition method of metal layer A l are electron beam steaming
Hair, the preparation method of dielectric layer Si are magnetron sputtering.
According to the computer sim- ulation after the material structure of the present embodiment and optimization design as a result, as seen from Figure 2, this implementation
The final spectral selection emissive material of example, in 3.0 μm~5.0 μm and 8.0 μm~14.0 μm of infrared window wave band emissivity
Respectively 0.10 and 0.21 or so, and be about 0.71 in 5.0 μm~8.0 μm emissivity average values of non-window wave band.
The spectral selection emissive material being prepared according to the present embodiment tests it in 3.0 μm~14.0 μm infrared hairs
Penetrate rate, as seen from Figure 3, the spectral selection emissive material that the present embodiment is finally prepared, at 3.0 μm~5.0 μm and
8.0 μm~14.0 μm of infrared window wave band emissivity is respectively 0.17 and 0.32 or so, and 5.0 μm of non-window wave band~
8.0 μm of emissivity average values are about 0.82.
Embodiment 2：
A kind of spectral selection emissive material can be used for infrared stealth, which is can be to infrared
The layer structure that the transmitting radiation feature of spectrum is regulated and controled, for the layer structure using silicon wafer as substrate, silicon chip surface is coated with gold
Belong to layer and infrared transparent dielectric layer.
In the spectral selection emissive material of the present embodiment, metal layer W, infrared transparent dielectric layer is ZnSe.This implementation
Example layer structure by W metal layer and ZnSe dielectric layer alternating superimposion form, from silicon chip substrate be followed successively by 50.0nm W,
800.0nm ZnSe, 18nm W, 500.0nm ZnSe, the overall thickness of entire layer structure are 1368.0nm.
In the present embodiment, the infrared transmittivity of 500nm and 800nm infrared transparent dielectric layer ZnSe be higher than 50%, 18nm and
The extinction coefficient of 50nm metal layer W is greater than 5, less than 20.
The preparation method of the spectral selection emissive material of the present embodiment, the deposition method of metal layer W are magnetron sputtering, are situated between
The preparation method of matter layer ZnSe is electron beam evaporation.
According to the computer sim- ulation after the layer structure and optimization design of the present embodiment as a result, the present embodiment it is final spectrum choosing
Selecting property emissive material is respectively 0.15 He in the infrared window wave band emissivity of 3.0 μm~5.0 μm and 8.0 μm~14.0 μm
0.17 or so, and be about 0.76 in 5.0 μm~8.0 μm emissivity average values of non-window wave band.
The spectral selection emissive material being prepared according to the present embodiment tests it in 3.0 μm~14.0 μm infrared hairs
Penetrate rate, the spectral selection emissive material that the present embodiment is finally prepared, at 3.0 μm~5.0 μm and 8.0 μm~14.0 μm
Infrared window wave band emissivity is respectively 0.16 and 0.29 or so, and in 5.0 μm~8.0 μm emissivity average values of non-window wave band
About 0.80.
Claims (10)
1. a kind of spectral selection emissive material that can be used for infrared stealth, which is characterized in that the spectral selection emits material
Material is layer structure, layered structure include substrate and alternately superposition be coated on the metal layer of the substrate surface and infrared
Bright dielectric layer.
2. spectral selection emissive material according to claim 1, which is characterized in that the metal layer is in 3~14 μm of waves
The extinction coefficient of section is greater than 5, and the infrared transparent dielectric layer is greater than 30% in the infrared transmittivity of 3~14 mu m wavebands.
3. spectral selection emissive material according to claim 1, which is characterized in that the material of the substrate is silicon, glass
Any one of glass, metal, high molecular material, the metal layer are nickel, chromium, gold, silver, copper, tungsten, aluminium, platinum, any in palladium
Kind, the infrared transparent dielectric layer is silicon, in germanium, tellurium, zinc sulphide, zinc selenide, magnesium fluoride, lithium fluoride, barium fluoride, calcirm-fluoride
It is any.
4. spectral selection emissive material according to claim 1 or 2 or 3, which is characterized in that the spectral selection hair
The number of plies for penetrating material is 3~8 layers.
5. spectral selection emissive material according to claim 1 or 2 or 3, which is characterized in that in layered structure with
Substrate contact is metal layer, and then face successively alternately coats infrared transparent dielectric layer, metal layer on the metal layer.
6. spectral selection emissive material according to claim 5, which is characterized in that the metal layer with substrate contact
With a thickness of 50~300nm, other metal layers with a thickness of 1~50nm, the infrared transparent dielectric layer with a thickness of 100~
900nm。
7. spectral selection emissive material according to claim 1 or 2 or 3, which is characterized in that the spectral selection hair
The infrared window wave band that material is penetrated at 3.0 μm~5.0 μm and 8.0 μm~14.0 μm realizes low-launch-rate, and emissivity is respectively
0.20 and 0.25 or less；The spectral selection emissive material realizes high emissivity in 5.0 μm~8.0 μm of non-window wave band,
Its emissivity is 0.80 or more.
8. a kind of preparation method of such as spectral selection emissive material according to any one of claims 1 to 7, feature exist
In including the following steps：Coating metal layer and infrared transparent dielectric layer are alternately superimposed in substrate surface using sedimentation.
9. preparation method according to claim 8, which is characterized in that the metal layer is splashed using electron beam evaporation or magnetic control
Method deposition is penetrated, the infrared transparent dielectric layer uses electron beam evaporation, magnetron sputtering, chemical vapor deposition or atomic layer deposition method
Deposition.
10. preparation method according to claim 8, which is characterized in that the substrate is cleaned before coating, described clear
It washes and is first cleaned using deionized water, then be immersed in dehydrated alcohol and be cleaned by ultrasonic.
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Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110737035A (en) * | 2019-10-22 | 2020-01-31 | 中国人民解放军国防科技大学 | stealth materials compatible with selective infrared radiation and radar wave absorption and preparation method thereof |
| CN111103643A (en) * | 2019-12-26 | 2020-05-05 | 中国人民解放军国防科技大学 | Selective-emission infrared stealth material and preparation method thereof |
| CN111158069A (en) * | 2019-12-26 | 2020-05-15 | 中国人民解放军国防科技大学 | Spectrum selective radiation infrared stealth material and preparation method thereof |
| CN111208589A (en) * | 2019-12-26 | 2020-05-29 | 中国人民解放军国防科技大学 | High-temperature-resistant selective-emission infrared stealth material and preparation method thereof |
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| CN110737035A (en) * | 2019-10-22 | 2020-01-31 | 中国人民解放军国防科技大学 | stealth materials compatible with selective infrared radiation and radar wave absorption and preparation method thereof |
| CN111103643A (en) * | 2019-12-26 | 2020-05-05 | 中国人民解放军国防科技大学 | Selective-emission infrared stealth material and preparation method thereof |
| CN111158069A (en) * | 2019-12-26 | 2020-05-15 | 中国人民解放军国防科技大学 | Spectrum selective radiation infrared stealth material and preparation method thereof |
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| CN111607767B (en) * | 2020-05-26 | 2021-08-06 | 上海交通大学 | Bayesian optimization-based multilayer film selective radiator construction method and system |
| CN111607767A (en) * | 2020-05-26 | 2020-09-01 | 上海交通大学 | Bayesian optimization-based multilayer film selective radiator construction method and system |
| CN111970915A (en) * | 2020-08-28 | 2020-11-20 | 山东大学 | Electromagnetic radiation prevention ultrathin film, electromagnetic radiation prevention ultrathin film device, preparation method and application |
| CN112346162A (en) * | 2020-10-20 | 2021-02-09 | 中国人民解放军国防科技大学 | Metal-dielectric type spectral selectivity multiband stealth film and preparation method thereof |
| CN112363263A (en) * | 2020-10-20 | 2021-02-12 | 中国人民解放军国防科技大学 | Metal-dielectric type laser infrared multiband compatible stealth film and preparation method thereof |
| CN112376021B (en) * | 2020-11-13 | 2023-03-31 | 上海米蜂激光科技有限公司 | Broadband antireflection film and preparation method thereof |
| CN112376021A (en) * | 2020-11-13 | 2021-02-19 | 上海米蜂激光科技有限公司 | Novel broadband antireflection film and preparation method thereof |
| CN112666637A (en) * | 2020-12-29 | 2021-04-16 | 浙江大学 | Lambert surface-based flexible thermal infrared stealth device and preparation method thereof |
| CN114030586A (en) * | 2021-11-24 | 2022-02-11 | 天津津航技术物理研究所 | Infrared stealthy combined material structure of high-speed aircraft |
| CN114030586B (en) * | 2021-11-24 | 2024-02-09 | 天津津航技术物理研究所 | Infrared stealth composite material structure of high-speed aircraft |
| CN114924342A (en) * | 2022-03-10 | 2022-08-19 | 电子科技大学 | Selective infrared radiation stealth material and preparation method thereof |
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| CN115287597B (en) * | 2022-08-03 | 2023-12-01 | 哈尔滨工业大学 | Preparation method of infrared medium-wave high-emissivity and long-wave low-emissivity composite film |
| CN115287597A (en) * | 2022-08-03 | 2022-11-04 | 哈尔滨工业大学 | Preparation method of infrared medium-wave high-emissivity and long-wave low-emissivity composite film |
| CN116171033A (en) * | 2023-02-27 | 2023-05-26 | 深圳大学 | Electromagnetic shielding material with infrared stealth function, preparation method thereof and wearable device |
| CN116171033B (en) * | 2023-02-27 | 2024-03-19 | 深圳大学 | Electromagnetic shielding material with infrared stealth function, preparation method thereof and wearable device |
| CN116430498A (en) * | 2023-03-03 | 2023-07-14 | 哈尔滨工业大学 | Infrared stealth coating with spectral selectivity and low emissivity as well as preparation method and application thereof |
| CN116430498B (en) * | 2023-03-03 | 2024-04-16 | 哈尔滨工业大学 | Infrared stealth coating with spectral selectivity and low emissivity as well as preparation method and application thereof |
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