CN116200705B - Visible light and infrared compatible stealth coating and preparation method and application thereof - Google Patents
Visible light and infrared compatible stealth coating and preparation method and application thereof Download PDFInfo
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/10—Glass or silica
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- C—CHEMISTRY; METALLURGY
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/46—Sputtering by ion beam produced by an external ion source
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Abstract
The application discloses a visible light and infrared compatible stealth coating and a preparation method and application thereof, belonging to the technical field of functional film materials and preparation thereof. The application solves the technical problems of poor temperature resistance, radiation resistance, heat dissipation, poor corrosion resistance and the like of the existing visible-infrared compatible stealth material. The application provides a coating with a periodic multilayer film structure through the optimal design of a film system, wherein a visible light stealth film layer is arranged on the uppermost layer of the periodic alternating superposition structure, and the coating can better realize high absorptivity in the visible light range and low emissivity in the infrared range. The periodic multilayer film structure consists of a high refractive index material layer and a low refractive index material layer, so that the temperature of the coating in an infrared band can be effectively reduced. In addition, the thickness of the coating is not more than 2 mu m, the coating has the advantages of light weight, uniform thickness of the whole coating, smooth, uniform and compact surface, no obvious holes and defects, and the corrosion resistance of the coating is effectively improved.
Description
Technical Field
The application relates to a visible light and infrared compatible stealth coating and a preparation method and application thereof, belonging to the technical field of functional film materials and preparation thereof.
Background
Along with the increasing demand of stealth aircraft, stealth technology is continuously developed, and the stealth technology is compatible with visible light and infrared stealth as important categories in the stealth technology, and is also getting more and more attention. The infrared camouflage technology is a technology for eliminating or reducing the real thermal infrared radiation characteristics of a target by adopting various engineering technical measures, or changing the thermal infrared radiation of the target to adapt to the thermal infrared radiation of the background, so that the infrared detection equipment cannot or is not easy to find the target, or shortening the detection distance to improve the battlefield viability of the military target. However, the infrared stealth technology has the defect that the target is only stealth for infrared light, but not for visible light, so that the target can be clearly seen through naked eyes or an optical telescope within a certain observation distance. Because of the diversified development of modern electronic detection technology, a single stealth technology cannot be effectively applied, so that research and application of the multifunctional convenient stealth technology are urgent.
Visible-infrared compatible stealth refers to materials that have both visible and infrared stealth properties. The traditional visible-infrared compatible stealth material is realized by adding coloring pigment into the low-emission infrared stealth coating, and the method has good stealth effect under the condition of no requirement on quality due to the large overall thickness of the film layer, but exceeds the overall requirement on quality of the weapon when the condition of light weight is required, and the thicker film layer is easy to have the thinking of uneven thickness in the preparation process, so that the corrosion resistance is poor. Based on the above problems, there is an urgent need to provide a novel visible light and infrared stealth coating material with simple preparation, good visible-infrared stealth performance and good corrosion resistance, and a preparation method thereof.
Disclosure of Invention
The application aims to solve the problems in the prior art, and provides a visible light and infrared compatible stealth coating, a preparation method and application thereof, so as to solve the problems of poor temperature resistance, radiation heat dissipation resistance, poor corrosion resistance and the like in the traditional visible-infrared compatible stealth material.
The technical scheme of the application is as follows:
one of the purposes of the present application is to provide a visible light and infrared stealth coating which is a periodically alternating stacked structure of dielectric layers and metal film layers, wherein the visible light stealth coating is arranged above the uppermost metal film layer, the metal film layer is made of Mo or W, and the dielectric layer is made of HfO 2 Or SiO 2 The visible light stealth coating is made of Cr 2 O 3 Or Fe (Fe) 2 O 3 。
Further defined is a metal film layer materialMo, hfO for dielectric layer material 2 The visible light stealth coating is made of Cr 2 O 3 。
Further defined, the dielectric layer and the metal film layer are alternately stacked for at least two periods.
Further defined, the dielectric layer and the metal film layer are alternately stacked for three periods.
Further defined, the coating has an absorptivity of 0.95,3-5 μm in the visible light range of 300-800 nm and an emissivity of 0.10 in the infrared window band of 8-14 μm, and an emissivity of 0.80 in the non-window band of 5-8 μm.
The second purpose of the application is to provide a preparation method of the visible light and infrared stealth coating compatible with the dielectric layer, the metal film layer and the visible light stealth coating, which are prepared by adopting an ion beam sputtering deposition process.
Further defined, the ion beam sputter deposition conditions of the dielectric layer are: the substrate temperature was 25 c and the sputter beam current was 25mA.
Further defined, the ion beam sputter deposition conditions of the metal film layer are: the substrate temperature was 25 c and the sputter beam current was 35mA.
Further defined, the ion beam sputter deposition conditions for the visible stealth coating are: the temperature was 25℃and the sputtering beam current was 30mA.
Further defined, the dielectric layer, the metal thin film layer, and the visible light stealth coating are fabricated using an ion beam plating machine.
Further defined, the specific preparation process of the coating comprises the following steps:
step 1, cleaning a substrate: preparing a substrate material, and cleaning and drying the substrate material;
step 2, preparing a dielectric layer on a substrate material by adopting an ion beam sputtering deposition process, and obtaining a corresponding thickness by controlling sputtering time;
step 3, preparing a metal film layer on the surface of the dielectric layer by adopting an ion beam sputtering deposition process, and obtaining corresponding thickness by controlling sputtering time;
step 4, repeating the step 2 and the step 3 to obtain a periodic alternating superposition structure of the dielectric layer and the metal film layer;
and 5, preparing a visible light stealth coating above the uppermost metal film layer by adopting an ion beam sputtering deposition process, and obtaining a corresponding thickness by controlling sputtering time to finish the preparation of the compatible visible light and infrared stealth coating.
Further defined, the substrate is Al or 304 stainless steel.
Further defined, and further defined, the substrate cleaning process is: firstly, deionized water is used for cleaning impurities on the surface of a substrate material, and then absolute ethyl alcohol is used for soaking the substrate material in an ultrasonic cleaner for cleaning.
Compared with the prior art, the application has the following beneficial effects:
(1) The application provides a coating with a periodic multilayer film structure through the optimal design of a film system, the coating better realizes the performances of high absorptivity in the visible light range and low emissivity in the infrared range, the periodic multilayer film structure is composed of a high refractive index material layer and a low refractive index material layer, the high refractive index material layer and the low refractive index material layer are the preferred window materials of the infrared band, the thermal matching performance is good, the temperature of the coating in the infrared band can be effectively reduced, the residual thermal stress is small, the adhesion between layers is good, the phenomenon of interpenetration is avoided, and the film layer is not easy to fall off.
(2) The visible light stealth film layer is arranged on the uppermost layer of the periodic alternating superposition structure, has good infrared transparency, has certain visible light and near infrared reflection performance, can reduce the infrared emissivity of the film, has good heat insulation performance, can effectively reflect infrared radiation emitted by a target, and reduces the infrared emissivity.
(3) The thickness of the coating prepared by the method is not more than 2 mu m, the method has the advantage of light weight, meanwhile, the thickness of each film layer is smaller, the influence of the film layer formed by the subsequent process on the surface of the film layer formed by the previous process is smaller, and the film layers are uniformly combined, so that the thickness of the whole coating is uniform, the surface is smooth and uniform and compact, obvious holes and defects are avoided, and the corrosion resistance of the coating is effectively improved.
Drawings
FIG. 1 is a schematic illustration of the structure of a compatible visible and infrared stealth coating prepared in example 1;
FIG. 2 is a graph of simulated emissivity spectra of the compatible visible and infrared stealth coatings prepared in example 1 in the 0.3-0.8 μm and 3.0-14.0 μm bands;
FIG. 3 is a surface SEM photograph of a compatible visible and infrared stealth coating prepared according to example 1;
FIG. 4 is an AFM image of a compatible visible and infrared stealth coating prepared according to example 1;
FIG. 5 is a plot of electrokinetic polarization of compatible visible and infrared stealth coatings prepared in example 1 in 3.5% NaCl solution.
Detailed Description
The present application will be described in further detail with reference to the following examples in order to make the objects, technical solutions and advantages of the present application more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the application.
The experimental methods used in the following examples are conventional methods unless otherwise specified. The materials, reagents, methods and apparatus used, without any particular description, are those conventional in the art and are commercially available to those skilled in the art.
Example 1:
the structure of the compatible visible and infrared stealth coating prepared in this example is shown in FIG. 1, and is specifically composed of a dielectric layer (HfO 2 Layers) and metal film layers (Mo layers) are alternately overlapped for three periods, and a visible light stealth coating (Cr) is arranged above the uppermost metal film layer 2 O 3 Layers), alternately stacked dielectric layers (HfO 2 Layer) and a metal thin film layer (Mo layer) in the order of 200±10nm, 440±10nm, 200±10nm, 700±10nm, 340±10nm and 110±10nm from the substrate end, a visible light stealth coating (Cr 2 O 3 Layer) thickness was 240.+ -.10 nm.
The specific process for preparing the solid energy storage material particles in the embodiment is carried out according to the following steps:
example 1:
step 1, cleaning a substrate: preparing a used substrate material 304 stainless steel, and cleaning the used substrate material before sputtering; firstly, cleaning surface impurities by using deionized water, soaking in absolute ethyl alcohol, cleaning for 20min in an ultrasonic cleaner, drying the surface by using an electric hair drier, and placing a 304 stainless steel substrate on a sample table for fixing;
step 2, preparing HfO on the substrate material by adopting an ion beam sputtering deposition process by using an ion beam coating machine 2 The layer, sputtering conditions include: the substrate temperature is 25 ℃, the sputtering beam current is 25mA, the sputtering time is 8min, and the HfO with the thickness of 200nm is obtained 2 A layer;
step 3, continuing to process the process in HfO 2 The Mo layer is prepared on the surface of the layer, and sputtering conditions comprise: the temperature of the substrate is 25 ℃, the beam current of the ion beam is 35mA, the sputtering time is 13min, and a Mo layer with the thickness of 440nm is obtained;
step 4, continuously preparing HfO on the surface of the Mo layer 2 The layer, sputtering conditions include: the temperature of the substrate is 25 ℃, the beam current of the ion beam is 25mA, the sputtering time is 8min, and the HfO with the thickness of 200nm is obtained 2 A layer;
step 5, continuing to process the process in HfO 2 The Mo layer is prepared on the surface of the layer, and sputtering conditions comprise: the temperature of the substrate is 25 ℃, the beam current of the ion beam is 35mA, the sputtering time is 21min, and a Mo layer with the thickness of 700nm is obtained;
step 6, preparing HfO on the surface of the Mo layer continuously 2 The layer, sputtering conditions include: the temperature of the substrate is 25 ℃, the beam current of the ion beam is 25mA, the sputtering time is 14min, and the HfO with the thickness of 340nm is obtained 2 A layer;
step 7, continuing to process the process in HfO 2 The Mo layer is prepared on the surface of the layer, and sputtering conditions comprise: the substrate temperature is 25 ℃, the ion beam current is 35mA, the sputtering time is 3min, and a Mo layer with the thickness of 110nm is obtained;
step 8, continuously preparing Cr on the surface of the Mo layer 2 O 3 The layer, sputtering conditions include: the temperature is 25 ℃, the sputtering beam current is 30mA, the sputtering time is 9min, and the compatible visible light and infrared stealth coating is obtained.
Example 2:
the specific process for preparing the solid energy storage material particles in the embodiment is carried out according to the following steps:
step 1, cleaning a substrate: preparing a used substrate material 304 stainless steel, and cleaning the used substrate material before sputtering; firstly, cleaning surface impurities by using deionized water, soaking in absolute ethyl alcohol, cleaning for 20min in an ultrasonic cleaner, drying the surface by using an electric hair drier, and placing a 304 stainless steel substrate on a sample table for fixing;
step 2, preparing HfO on the substrate material by adopting an ion beam sputtering deposition process by using an ion beam coating machine 2 The layer, sputtering conditions include: the temperature of the substrate is 25 ℃, the sputtering beam current is 25mA, and the sputtering time is 6min;
step 3, continuing to process the process in HfO 2 The Mo layer is prepared on the surface of the layer, and sputtering conditions comprise: the temperature of the substrate is 25 ℃, the beam current of the ion beam is 35mA, and the sputtering time is 11min;
step 4, continuously preparing HfO on the surface of the Mo layer 2 The layer, sputtering conditions include: the temperature of the substrate is 25 ℃, the beam current of the ion beam is 25mA, and the sputtering time is 6min;
step 5, continuing to process the process in HfO 2 The Mo layer is prepared on the surface of the layer, and sputtering conditions comprise: the temperature of the substrate is 25 ℃, the beam current of the ion beam is 35mA, and the sputtering time is 19min;
step 6, preparing HfO on the surface of the Mo layer continuously 2 The layer, sputtering conditions include: the temperature of the substrate is 25 ℃, the beam current of the ion beam is 25mA, and the sputtering time is 12min;
step 7, continuing to process the process in HfO 2 The Mo layer is prepared on the surface of the layer, and sputtering conditions comprise: the temperature of the substrate is 25 ℃, the beam current of the ion beam is 35mA, and the sputtering time is 2min;
step 8, continuously preparing Cr on the surface of the Mo layer 2 O 3 The layer, sputtering conditions include: the temperature is 25 ℃, the sputtering beam current is 30mA, the sputtering time is 8min, and the compatible visible light and infrared stealth coating is obtained.
Example 3:
the specific process for preparing the solid energy storage material particles in the embodiment is carried out according to the following steps:
step 1, cleaning a substrate: preparing a used substrate material 304 stainless steel, and cleaning the used substrate material before sputtering; firstly, cleaning surface impurities by using deionized water, soaking in absolute ethyl alcohol, cleaning for 20min in an ultrasonic cleaner, drying the surface by using an electric hair drier, and placing a 304 stainless steel substrate on a sample table for fixing;
step 2, preparing HfO on the substrate material by adopting an ion beam sputtering deposition process by using an ion beam coating machine 2 The layer, sputtering conditions include: the temperature of the substrate is 25 ℃, the sputtering beam current is 25mA, and the sputtering time is 4min;
step 3, continuing to process the process in HfO 2 The Mo layer is prepared on the surface of the layer, and sputtering conditions comprise: the temperature of the substrate is 25 ℃, the beam current of the ion beam is 35mA, and the sputtering time is 9min;
step 4, continuously preparing HfO on the surface of the Mo layer 2 The layer, sputtering conditions include: the temperature of the substrate is 25 ℃, the beam current of the ion beam is 25mA, and the sputtering time is 4min;
step 5, continuing to process the process in HfO 2 The Mo layer is prepared on the surface of the layer, and sputtering conditions comprise: the temperature of the substrate is 25 ℃, the beam current of the ion beam is 35mA, and the sputtering time is 17min;
step 6, preparing HfO on the surface of the Mo layer continuously 2 The layer, sputtering conditions include: the temperature of the substrate is 25 ℃, the beam current of the ion beam is 25mA, and the sputtering time is 10min;
step 7, continuing to process the process in HfO 2 The Mo layer is prepared on the surface of the layer, and sputtering conditions comprise: the temperature of the substrate is 25 ℃, the beam current of the ion beam is 35mA, and the sputtering time is 1min;
step 8, continuously preparing Cr on the surface of the Mo layer 2 O 3 The layer, sputtering conditions include: the temperature is 25 ℃, the sputtering beam current is 30mA, the sputtering time is 7min, and the compatible visible light and infrared stealth coating is obtained.
Example 4:
the specific process for preparing the solid energy storage material particles in the embodiment is carried out according to the following steps:
step 1, cleaning a substrate: preparing a used substrate material 304 stainless steel, and cleaning the used substrate material before sputtering; firstly, cleaning surface impurities by using deionized water, soaking in absolute ethyl alcohol, cleaning for 20min in an ultrasonic cleaner, drying the surface by using an electric hair drier, and placing a 304 stainless steel substrate on a sample table for fixing;
step 2, preparing HfO on the substrate material by adopting an ion beam sputtering deposition process by using an ion beam coating machine 2 The layer, sputtering conditions include: the temperature of the substrate is 25 ℃, the sputtering beam current is 25mA, and the sputtering time is 10min;
step 3, continuing to process the process in HfO 2 The Mo layer is prepared on the surface of the layer, and sputtering conditions comprise: the temperature of the substrate is 25 ℃, the beam current of the ion beam is 35mA, and the sputtering time is 15min;
step 4, continuously preparing HfO on the surface of the Mo layer 2 The layer, sputtering conditions include: the temperature of the substrate is 25 ℃, the beam current of the ion beam is 25mA, and the sputtering time is 10min;
step 5, continuing to process the process in HfO 2 The Mo layer is prepared on the surface of the layer, and sputtering conditions comprise: the temperature of the substrate is 25 ℃, the beam current of the ion beam is 35mA, and the sputtering time is 23min;
step 6, preparing HfO on the surface of the Mo layer continuously 2 The layer, sputtering conditions include: the temperature of the substrate is 25 ℃, the beam current of the ion beam is 25mA, and the sputtering time is 16min;
step 7, continuing to process the process in HfO 2 The Mo layer is prepared on the surface of the layer, and sputtering conditions comprise: the temperature of the substrate is 25 ℃, the beam current of the ion beam is 35mA, and the sputtering time is 4min;
step 8, continuously preparing Cr on the surface of the Mo layer 2 O 3 The layer, sputtering conditions include: the temperature is 25 ℃, the sputtering beam current is 30mA, the sputtering time is 10min, and the compatible visible light and infrared stealth coating is obtained.
Example 5:
the specific process for preparing the solid energy storage material particles in the embodiment is carried out according to the following steps:
step 1, cleaning a substrate: preparing a used substrate material 304 stainless steel, and cleaning the used substrate material before sputtering; firstly, cleaning surface impurities by using deionized water, soaking in absolute ethyl alcohol, cleaning for 20min in an ultrasonic cleaner, drying the surface by using an electric hair drier, and placing a 304 stainless steel substrate on a sample table for fixing;
step 2, preparing HfO on the substrate material by adopting an ion beam sputtering deposition process by using an ion beam coating machine 2 The layer, sputtering conditions include: the temperature of the substrate is 25 ℃, the sputtering beam current is 25mA, and the sputtering time is 12min;
step 3, continuing to process the process in HfO 2 The Mo layer is prepared on the surface of the layer, and sputtering conditions comprise: the temperature of the substrate is 25 ℃, the beam current of the ion beam is 35mA, and the sputtering time is 17min;
step 4, continuously preparing HfO on the surface of the Mo layer 2 The layer, sputtering conditions include: the temperature of the substrate is 25 ℃, the beam current of the ion beam is 25mA, and the sputtering time is 12min;
step 5, continuing to process the process in HfO 2 The Mo layer is prepared on the surface of the layer, and sputtering conditions comprise: the temperature of the substrate is 25 ℃, the beam current of the ion beam is 35mA, and the sputtering time is 25min;
step 6, preparing HfO on the surface of the Mo layer continuously 2 The layer, sputtering conditions include: the temperature of the substrate is 25 ℃, the beam current of the ion beam is 25mA, and the sputtering time is 18min;
step 7, continuing to process the process in HfO 2 The Mo layer is prepared on the surface of the layer, and sputtering conditions comprise: the temperature of the substrate is 25 ℃, the beam current of the ion beam is 35mA, and the sputtering time is 5min;
step 8, continuously preparing Cr on the surface of the Mo layer 2 O 3 The layer, sputtering conditions include: the temperature is 25 ℃, the sputtering beam current is 30mA, the sputtering time is 11min, and the compatible visible light and infrared stealth coating is obtained.
Effect example:
the compatible visible and infrared stealth coatings obtained in example 1 were characterized for performance as follows:
(1) The emissivity of the film was simulated by using simulation software, and the simulated emissivity spectrum of the visible light and infrared stealth coating compatible with the coating obtained in example 1 is shown in fig. 2, and as can be seen from fig. 2, the emissivity of the infrared window band of the coating with the absorptivity of 0.95,3-5 μm and the infrared window band of 8-14 μm in the visible light range of 300-800 nm is only 0.10, and the emissivity of the non-window band of 5-8 μm is up to 0.80.
(2) Characterization of the surface microscopic morphology of the visible and infrared-compatible stealth coating obtained in example 1, as shown in fig. 3, it can be seen from fig. 3 that the surface of the coating is smooth, uniform and dense, and has no obvious holes and defects, mainly because the thickness of each film layer in example 1 is smaller, the film layer formed in the subsequent process has less influence on the surface of the film layer formed in the previous process, so that the film layers have better combination, and thus the thickness of the overall coating is more uniform.
(3) AFM test was performed on the visible and infrared stealth compatible coating obtained in example 1, and as shown in FIG. 4, the particles on the upper surface of the film were smaller, the surface was smoother, and as shown in FIG. 4, the roughness of the surface of the coating was 1.64nm, so that the coating had a lower emissivity in the infrared band.
(4) The visible and infrared stealth compatible coating obtained in example 1 and the corrosion resistance of the base stainless steel were tested, and the potentiodynamic polarization curve in a NaCl solution with a mass concentration of 3.5% is shown in fig. 5, and the results indicate that the coating has good corrosion resistance.
While the application has been described in terms of preferred embodiments, it is not intended to be limited thereto, but rather to enable any person skilled in the art to make various changes and modifications without departing from the spirit and scope of the present application, which is therefore to be limited only by the appended claims.
Claims (1)
1. A preparation method of a visible light and infrared stealth coating compatible is characterized by comprising the following steps:
step 1, cleaning a substrate: preparing a used substrate material 304 stainless steel, and cleaning the used substrate material before sputtering; firstly, cleaning surface impurities by using deionized water, soaking in absolute ethyl alcohol, cleaning for 20min in an ultrasonic cleaner, drying the surface by using an electric hair drier, and placing a 304 stainless steel substrate on a sample table for fixing;
step 2, preparing HfO on the substrate material by adopting an ion beam sputtering deposition process by using an ion beam coating machine 2 The layer, sputtering conditions include: the substrate temperature is 25 ℃, the sputtering beam current is 25mA, the sputtering time is 8min, and the HfO with the thickness of 200nm is obtained 2 A layer;
step 3, continuing to process the process in HfO 2 The Mo layer is prepared on the surface of the layer, and sputtering conditions comprise: the temperature of the substrate is 25 ℃, the beam current of the ion beam is 35mA, the sputtering time is 13min, and a Mo layer with the thickness of 440nm is obtained;
step 4, continuously preparing HfO on the surface of the Mo layer 2 The layer, sputtering conditions include: the temperature of the substrate is 25 ℃, the beam current of the ion beam is 25mA, the sputtering time is 8min, and the HfO with the thickness of 200nm is obtained 2 A layer;
step 5, continuing to process the process in HfO 2 The Mo layer is prepared on the surface of the layer, and sputtering conditions comprise: the temperature of the substrate is 25 ℃, the beam current of the ion beam is 35mA, the sputtering time is 21min, and a Mo layer with the thickness of 700nm is obtained;
step 6, preparing HfO on the surface of the Mo layer continuously 2 The layer, sputtering conditions include: the temperature of the substrate is 25 ℃, the beam current of the ion beam is 25mA, the sputtering time is 14min, and the HfO with the thickness of 340nm is obtained 2 A layer;
step 7, continuing to process the process in HfO 2 The Mo layer is prepared on the surface of the layer, and sputtering conditions comprise: the substrate temperature is 25 ℃, the ion beam current is 35mA, the sputtering time is 3min, and a Mo layer with the thickness of 110nm is obtained;
step 8, continuously preparing Cr on the surface of the Mo layer 2 O 3 The layer, sputtering conditions include: the temperature is 25 ℃, the sputtering beam current is 30mA, the sputtering time is 9min, and the compatible visible light and infrared stealth coating is obtained.
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| CN106382854A (en) * | 2016-09-08 | 2017-02-08 | 中国人民解放军国防科学技术大学 | Visible light and infrared light compatible camouflage material and preparation method thereof |
| CN111103643A (en) * | 2019-12-26 | 2020-05-05 | 中国人民解放军国防科技大学 | Selective-emission infrared stealth material and preparation method thereof |
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| CN111103643A (en) * | 2019-12-26 | 2020-05-05 | 中国人民解放军国防科技大学 | Selective-emission infrared stealth material and preparation method thereof |
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