CN116410227B - 咔唑的膦酸衍生物及量子点发光器件和钙钛矿太阳能电池 - Google Patents
咔唑的膦酸衍生物及量子点发光器件和钙钛矿太阳能电池 Download PDFInfo
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- CN116410227B CN116410227B CN202310346245.9A CN202310346245A CN116410227B CN 116410227 B CN116410227 B CN 116410227B CN 202310346245 A CN202310346245 A CN 202310346245A CN 116410227 B CN116410227 B CN 116410227B
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- Prior art keywords
- hole transport
- phosphonic acid
- carbazole
- quantum dot
- transport layer
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- 239000002096 quantum dot Substances 0.000 title claims abstract description 45
- UJOBWOGCFQCDNV-UHFFFAOYSA-N Carbazole Natural products C1=CC=C2C3=CC=CC=C3NC2=C1 UJOBWOGCFQCDNV-UHFFFAOYSA-N 0.000 title claims abstract description 44
- 150000003007 phosphonic acid derivatives Chemical class 0.000 title abstract description 4
- RDOXTESZEPMUJZ-UHFFFAOYSA-N anisole Chemical compound COC1=CC=CC=C1 RDOXTESZEPMUJZ-UHFFFAOYSA-N 0.000 claims abstract description 42
- 239000000463 material Substances 0.000 claims abstract description 37
- -1 phosphonic acid compound Chemical class 0.000 claims abstract description 22
- UZKWTJUDCOPSNM-UHFFFAOYSA-N methoxybenzene Substances CCCCOC=C UZKWTJUDCOPSNM-UHFFFAOYSA-N 0.000 claims abstract description 21
- LTYMSROWYAPPGB-UHFFFAOYSA-N diphenyl sulfide Chemical compound C=1C=CC=CC=1SC1=CC=CC=C1 LTYMSROWYAPPGB-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000000126 substance Substances 0.000 claims abstract description 4
- 239000010410 layer Substances 0.000 claims description 57
- 230000005525 hole transport Effects 0.000 claims description 51
- 238000004528 spin coating Methods 0.000 claims description 6
- 238000001704 evaporation Methods 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 claims description 4
- 229910052736 halogen Inorganic materials 0.000 claims description 3
- 150000002367 halogens Chemical class 0.000 claims description 3
- LUFPJJNWMYZRQE-UHFFFAOYSA-N benzylsulfanylmethylbenzene Chemical compound C=1C=CC=CC=1CSCC1=CC=CC=C1 LUFPJJNWMYZRQE-UHFFFAOYSA-N 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 claims description 2
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- 230000008020 evaporation Effects 0.000 claims description 2
- 238000007641 inkjet printing Methods 0.000 claims description 2
- 238000007738 vacuum evaporation Methods 0.000 claims description 2
- 150000003009 phosphonic acids Chemical class 0.000 claims 2
- 150000002431 hydrogen Chemical class 0.000 claims 1
- 239000002356 single layer Substances 0.000 claims 1
- 125000000383 tetramethylene group Chemical group [H]C([H])([*:1])C([H])([H])C([H])([H])C([H])([H])[*:2] 0.000 claims 1
- 230000005540 biological transmission Effects 0.000 abstract description 4
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 abstract description 3
- 230000015572 biosynthetic process Effects 0.000 description 34
- 238000003786 synthesis reaction Methods 0.000 description 34
- 238000001308 synthesis method Methods 0.000 description 17
- HEDRZPFGACZZDS-MICDWDOJSA-N Trichloro(2H)methane Chemical compound [2H]C(Cl)(Cl)Cl HEDRZPFGACZZDS-MICDWDOJSA-N 0.000 description 16
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- 229940125904 compound 1 Drugs 0.000 description 12
- 238000002347 injection Methods 0.000 description 11
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- 238000005160 1H NMR spectroscopy Methods 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
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- 238000002360 preparation method Methods 0.000 description 7
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- 238000004440 column chromatography Methods 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- TVTJUIAKQFIXCE-HUKYDQBMSA-N 2-amino-9-[(2R,3S,4S,5R)-4-fluoro-3-hydroxy-5-(hydroxymethyl)oxolan-2-yl]-7-prop-2-ynyl-1H-purine-6,8-dione Chemical compound NC=1NC(C=2N(C(N(C=2N=1)[C@@H]1O[C@@H]([C@H]([C@H]1O)F)CO)=O)CC#C)=O TVTJUIAKQFIXCE-HUKYDQBMSA-N 0.000 description 3
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 3
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- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 3
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- 239000008367 deionised water Substances 0.000 description 3
- 229910021641 deionized water Inorganic materials 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 3
- 239000012074 organic phase Substances 0.000 description 3
- 229920001467 poly(styrenesulfonates) Polymers 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
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- STBLNCCBQMHSRC-BATDWUPUSA-N (2s)-n-[(3s,4s)-5-acetyl-7-cyano-4-methyl-1-[(2-methylnaphthalen-1-yl)methyl]-2-oxo-3,4-dihydro-1,5-benzodiazepin-3-yl]-2-(methylamino)propanamide Chemical compound O=C1[C@@H](NC(=O)[C@H](C)NC)[C@H](C)N(C(C)=O)C2=CC(C#N)=CC=C2N1CC1=C(C)C=CC2=CC=CC=C12 STBLNCCBQMHSRC-BATDWUPUSA-N 0.000 description 2
- LTBWKAYPXIIVPC-UHFFFAOYSA-N 3-bromo-9h-carbazole Chemical compound C1=CC=C2C3=CC(Br)=CC=C3NC2=C1 LTBWKAYPXIIVPC-UHFFFAOYSA-N 0.000 description 2
- OJRUSAPKCPIVBY-KQYNXXCUSA-N C1=NC2=C(N=C(N=C2N1[C@H]3[C@@H]([C@@H]([C@H](O3)COP(=O)(CP(=O)(O)O)O)O)O)I)N Chemical compound C1=NC2=C(N=C(N=C2N1[C@H]3[C@@H]([C@@H]([C@H](O3)COP(=O)(CP(=O)(O)O)O)O)O)I)N OJRUSAPKCPIVBY-KQYNXXCUSA-N 0.000 description 2
- YZCKVEUIGOORGS-OUBTZVSYSA-N Deuterium Chemical compound [2H] YZCKVEUIGOORGS-OUBTZVSYSA-N 0.000 description 2
- OPFJDXRVMFKJJO-ZHHKINOHSA-N N-{[3-(2-benzamido-4-methyl-1,3-thiazol-5-yl)-pyrazol-5-yl]carbonyl}-G-dR-G-dD-dD-dD-NH2 Chemical compound S1C(C=2NN=C(C=2)C(=O)NCC(=O)N[C@H](CCCN=C(N)N)C(=O)NCC(=O)N[C@H](CC(O)=O)C(=O)N[C@H](CC(O)=O)C(=O)N[C@H](CC(O)=O)C(N)=O)=C(C)N=C1NC(=O)C1=CC=CC=C1 OPFJDXRVMFKJJO-ZHHKINOHSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 2
- MCEWYIDBDVPMES-UHFFFAOYSA-N [60]pcbm Chemical compound C123C(C4=C5C6=C7C8=C9C%10=C%11C%12=C%13C%14=C%15C%16=C%17C%18=C(C=%19C=%20C%18=C%18C%16=C%13C%13=C%11C9=C9C7=C(C=%20C9=C%13%18)C(C7=%19)=C96)C6=C%11C%17=C%15C%13=C%15C%14=C%12C%12=C%10C%10=C85)=C9C7=C6C2=C%11C%13=C2C%15=C%12C%10=C4C23C1(CCCC(=O)OC)C1=CC=CC=C1 MCEWYIDBDVPMES-UHFFFAOYSA-N 0.000 description 2
- 125000003545 alkoxy group Chemical group 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
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- 125000004093 cyano group Chemical group *C#N 0.000 description 2
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- 229910052805 deuterium Inorganic materials 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
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- IOMMMLWIABWRKL-WUTDNEBXSA-N nazartinib Chemical compound C1N(C(=O)/C=C/CN(C)C)CCCC[C@H]1N1C2=C(Cl)C=CC=C2N=C1NC(=O)C1=CC=NC(C)=C1 IOMMMLWIABWRKL-WUTDNEBXSA-N 0.000 description 2
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 2
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- 229910000027 potassium carbonate Inorganic materials 0.000 description 2
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 2
- DQWPFSLDHJDLRL-UHFFFAOYSA-N triethyl phosphate Chemical compound CCOP(=O)(OCC)OCC DQWPFSLDHJDLRL-UHFFFAOYSA-N 0.000 description 2
- HHXBZEIOUIMZET-UHFFFAOYSA-N (2,3-dichlorophenyl)-phenylphosphane Chemical compound ClC1=CC=CC(PC=2C=CC=CC=2)=C1Cl HHXBZEIOUIMZET-UHFFFAOYSA-N 0.000 description 1
- SQTUYFKNCCBFRR-UHFFFAOYSA-N (2,4-dimethoxyphenyl)boronic acid Chemical compound COC1=CC=C(B(O)O)C(OC)=C1 SQTUYFKNCCBFRR-UHFFFAOYSA-N 0.000 description 1
- VOAAEKKFGLPLLU-UHFFFAOYSA-N (4-methoxyphenyl)boronic acid Chemical compound COC1=CC=C(B(O)O)C=C1 VOAAEKKFGLPLLU-UHFFFAOYSA-N 0.000 description 1
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- ULTHEAFYOOPTTB-UHFFFAOYSA-N 1,4-dibromobutane Chemical compound BrCCCCBr ULTHEAFYOOPTTB-UHFFFAOYSA-N 0.000 description 1
- GKWLILHTTGWKLQ-UHFFFAOYSA-N 2,3-dihydrothieno[3,4-b][1,4]dioxine Chemical compound O1CCOC2=CSC=C21 GKWLILHTTGWKLQ-UHFFFAOYSA-N 0.000 description 1
- YCQVNMKLANFADW-UHFFFAOYSA-N 2-bromoethyl diethyl phosphate Chemical compound CCOP(=O)(OCC)OCCBr YCQVNMKLANFADW-UHFFFAOYSA-N 0.000 description 1
- TVZRAEYQIKYCPH-UHFFFAOYSA-N 3-(trimethylsilyl)propane-1-sulfonic acid Chemical compound C[Si](C)(C)CCCS(O)(=O)=O TVZRAEYQIKYCPH-UHFFFAOYSA-N 0.000 description 1
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical class C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical class [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 229920000144 PEDOT:PSS Polymers 0.000 description 1
- 229920001167 Poly(triaryl amine) Polymers 0.000 description 1
- KEAYESYHFKHZAL-UHFFFAOYSA-N Sodium Chemical compound [Na] KEAYESYHFKHZAL-UHFFFAOYSA-N 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
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- 125000002178 anthracenyl group Chemical group C1(=CC=CC2=CC3=CC=CC=C3C=C12)* 0.000 description 1
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- IYYIVELXUANFED-UHFFFAOYSA-N bromo(trimethyl)silane Chemical compound C[Si](C)(C)Br IYYIVELXUANFED-UHFFFAOYSA-N 0.000 description 1
- FRLJSGOEGLARCA-UHFFFAOYSA-N cadmium sulfide Chemical class [S-2].[Cd+2] FRLJSGOEGLARCA-UHFFFAOYSA-N 0.000 description 1
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- DQYBDCGIPTYXML-UHFFFAOYSA-N ethoxyethane;hydrate Chemical compound O.CCOCC DQYBDCGIPTYXML-UHFFFAOYSA-N 0.000 description 1
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- VVVPGLRKXQSQSZ-UHFFFAOYSA-N indolo[3,2-c]carbazole Chemical compound C1=CC=CC2=NC3=C4C5=CC=CC=C5N=C4C=CC3=C21 VVVPGLRKXQSQSZ-UHFFFAOYSA-N 0.000 description 1
- 229960005544 indolocarbazole Drugs 0.000 description 1
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- 230000009878 intermolecular interaction Effects 0.000 description 1
- RQQRAHKHDFPBMC-UHFFFAOYSA-L lead(ii) iodide Chemical compound I[Pb]I RQQRAHKHDFPBMC-UHFFFAOYSA-L 0.000 description 1
- XCAUINMIESBTBL-UHFFFAOYSA-N lead(ii) sulfide Chemical compound [Pb]=S XCAUINMIESBTBL-UHFFFAOYSA-N 0.000 description 1
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 1
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- 239000000178 monomer Substances 0.000 description 1
- 239000002159 nanocrystal Substances 0.000 description 1
- 125000001624 naphthyl group Chemical group 0.000 description 1
- 239000013110 organic ligand Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 1
- 125000001792 phenanthrenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3C=CC12)* 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- JNISDUFTVYOYGS-UHFFFAOYSA-N phenylsulfanylmethylsulfanylmethylsulfanylbenzene Chemical group C=1C=CC=CC=1SCSCSC1=CC=CC=C1 JNISDUFTVYOYGS-UHFFFAOYSA-N 0.000 description 1
- ABLZXFCXXLZCGV-UHFFFAOYSA-N phosphonic acid group Chemical group P(O)(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 description 1
- 108091008695 photoreceptors Proteins 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229960002796 polystyrene sulfonate Drugs 0.000 description 1
- 239000011970 polystyrene sulfonate Substances 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 125000001725 pyrenyl group Chemical group 0.000 description 1
- 238000006862 quantum yield reaction Methods 0.000 description 1
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- 239000012047 saturated solution Substances 0.000 description 1
- GGYFMLJDMAMTAB-UHFFFAOYSA-N selanylidenelead Chemical class [Pb]=[Se] GGYFMLJDMAMTAB-UHFFFAOYSA-N 0.000 description 1
- 239000002094 self assembled monolayer Substances 0.000 description 1
- 239000013545 self-assembled monolayer Substances 0.000 description 1
- 238000001338 self-assembly Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000012312 sodium hydride Substances 0.000 description 1
- 229910000104 sodium hydride Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
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- 239000002904 solvent Substances 0.000 description 1
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- 125000004434 sulfur atom Chemical group 0.000 description 1
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- JRMUNVKIHCOMHV-UHFFFAOYSA-M tetrabutylammonium bromide Chemical compound [Br-].CCCC[N+](CCCC)(CCCC)CCCC JRMUNVKIHCOMHV-UHFFFAOYSA-M 0.000 description 1
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- 125000000876 trifluoromethoxy group Chemical group FC(F)(F)O* 0.000 description 1
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- GTLQJUQHDTWYJC-UHFFFAOYSA-N zinc;selenium(2-) Chemical class [Zn+2].[Se-2] GTLQJUQHDTWYJC-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
- C07F9/02—Phosphorus compounds
- C07F9/547—Heterocyclic compounds, e.g. containing phosphorus as a ring hetero atom
- C07F9/553—Heterocyclic compounds, e.g. containing phosphorus as a ring hetero atom having one nitrogen atom as the only ring hetero atom
- C07F9/572—Five-membered rings
- C07F9/5728—Five-membered rings condensed with carbocyclic rings or carbocyclic ring systems
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
- C07F9/02—Phosphorus compounds
- C07F9/547—Heterocyclic compounds, e.g. containing phosphorus as a ring hetero atom
- C07F9/6558—Heterocyclic compounds, e.g. containing phosphorus as a ring hetero atom containing at least two different or differently substituted hetero rings neither condensed among themselves nor condensed with a common carbocyclic ring or ring system
- C07F9/65586—Heterocyclic compounds, e.g. containing phosphorus as a ring hetero atom containing at least two different or differently substituted hetero rings neither condensed among themselves nor condensed with a common carbocyclic ring or ring system at least one of the hetero rings does not contain nitrogen as ring hetero atom
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/50—Photovoltaic [PV] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/15—Hole transporting layers
-
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Abstract
本发明属于光电材料技术领域,具体涉及一种基于咔唑的膦酸化合物的衍生物以及基于咔唑的膦酸衍生物制备的量子点发光器件和钙钛矿太阳能电池。本发明的含有苯甲醚/苯甲硫醚基咔唑的膦酸化合物,具有如下所示的化学结构式采用本发明的一种含有苯甲醚/苯甲硫醚基咔唑的膦酸化合物的衍生物制备的器件可以有效降低器件的工作电压和提升器件效率,降低电子器件的工作电压,减少电子传输过程的能量损失。
Description
技术领域
本发明属于光电材料技术领域,具体涉及一种基于咔唑的膦酸化合物的衍生物。此外,本发明还涉及采用所述的基于咔唑的膦酸衍生物制备的量子点发光器件和钙钛矿太阳能电池。
技术背景
上世纪80年代初,Alexei Ekimov和Alexander Efros首次在半导体掺杂的玻璃中发现量子点纳米晶的存在及其独特的光学性能。其后,研究发现,通过对这类纳米半导体材料施加一定的电场或光压,其便会发出特定频率的光,而发出的光的频率会随着纳米材料的尺寸的改变而变化,因而通过调节纳米材料的尺寸就可以控制其发出的光的颜色,由于这类纳米半导体材料拥有限制电子和电子空穴(Electron hole)的特性,其类似于自然界中的原子或分子,因而被称为“量子点(Quantum Dot,QD)”。随着对量子点材料及制备技术研究的不断深入,人们逐渐认识到量子点具有光谱随尺寸可调、斯托克斯位移大、发光效率高、发光稳定性好等一系列独特的光学性能。由于量子点材料电激发后可以产生高纯度荧光且具有良好的生物相容性,故基于生物荧光标记的量子点生物技术首先在医药学上得到了应用。2014年12月,中国第一台量子点电视就由TCL正式发布,率先推开了全球彩电业量子点时代的大门。
目前研究和应用的量子点材料主要是由IV、II-Ⅵ,IV-VI或III-V元素组成的无机量子点材料,包括硅量子点、锗量子点、硫化镉量子点、硒化镉量子点、碲化镉量子点、硒化锌量子点、硫化铅量子点、硒化铅量子点、磷化铟量子点和砷化铟量子点等。无机量子点虽然具有荧光量子效率高、亮度高、缺陷容忍度高等优点,但是无机量子产率低,并且其表面缺陷和表面有机配体的绝缘特性对其荧光量子效率、光电器件性能等具有显著的影响,由其制备的发光器件的产品性能一致性、稳定性较差。当前的量子点器件通常包含有机的空穴注入层、有机空穴传输层、无机量子点发光层和无机电子传输层。在量子点器件结构中,电子传输材料的迁移率往往高于空穴传输材料的迁移率1-2个数量级,并且有机空穴传输层在光照下容易分解变质,影响量子点发光器件的效率和寿命,因此开发高迁移率的空穴传输材料尤为重要。
作为第三代太阳能电池,钙钛矿太阳能电池以其较高光电转换效率以及低成本无污染的特点,在清洁绿色能源开发和环境保护领域,显示出强大的商业应用前景。空穴传输层(hole-transporting layer,HTL)在钙钛矿器件中承担了载流子传输,抑制空穴非辐射性复合的重要作用,目前普遍采用的空穴传输和空穴注入传输层材料主要为有机材料,如sprio-OMeTAD、PEDOT:PSS、PTAA等,但这些有机空穴传输层材料通常制作工艺复杂、成本昂贵,同时热稳定性差,且跟钙钛矿界面结合能力差,容易漏电,而且使用寿命短,因此需要开发性能更好的空穴传输和注入层。
发明内容
针对现有技术中存在的技术问题,本发明的目的在于提供一种基于咔唑的膦酸化合物的衍生物,该衍生物作为量子点器件的空穴传输层材料,在测试条件下表现出较高的电子迁移率。利用该衍生物优异的光电性能,本发明还开发了一种量子点发光器件以及一种钙钛矿太阳能电池。
本发明实现上述目的所采用的技术方案如下。
一种含有苯甲醚/苯甲硫醚基咔唑的膦酸化合物,具有如式I所示的化学结构式:
式中,R1-R8至少有一个基团为苯甲醚基或者苯甲硫醚,其他的表示为氢、氘原子、卤素、氰基、硝基、三氟甲基、甲氧基、三氟甲氧基、C1-C12烷基、C1-C8烷氧基、C6-C30的取代或者未取代的芳基、C3-C30的取代或者未取代的杂芳基、C2-C8的取代或者未取代的烯烷基、C2-C8的取代或者未取代的炔烷基;
L表示为C1-C12亚烷基,C6-C30的取代或者未取代的亚芳基,C3-C30的取代或者未取代的亚杂芳基;
优选地,R1-R8至少有一个基团为
*表示该基团在结构式I上的连接位点;其他的独立地表示为氢,氘,卤素,氰基,硝基,C1-C8烷基、C1-C8烷氧基,C1-C4烷基取代或未取代的苯基。
优选地,L优选为亚甲基,亚乙基,亚并基,亚异丙基,亚丁基,亚戊基,亚己烷基,亚环戊基,亚环己基,苯基,萘基,联苯基,蒽基,菲基,芘基,苝基,荧蒽基,(9,9-二烷基)芴基。
更为优选地,所述的基于咔唑的膦酸化合物1-化合物60中的任意一种:
本发明所述的含有苯甲醚/苯甲硫醚基咔唑的膦酸化合物可以应用于有机量子点电致显示技术领域、生物传感器分析与检测领域和太阳能电池领域等,例如有机量子点电致发光器件、钙钛矿太阳能电池、有机量子点有机薄膜晶体管或有机量子点光感受器等。
本发明还提供一种量子点电致发光器件,含有空穴传输层,其特征在于,所述的空穴传输层中含有如上所述的空穴传输材料。
本发明还提供一种钙钛矿太阳能电池,将上述基于吲哚并咔唑的自组装单分子层空穴传输材料作为空穴传输材料应用于钙钛矿太阳能电池上。
所述的空穴传输层可以通过真空蒸镀法、分子束蒸镀法、溶于溶剂的浸涂法、旋涂法、棒涂法或者喷墨打印法制得。
所述空穴传输层的厚度为1~500nm,优选为10~100nm,更优选为20~60nm。
相对于现有的空穴传输层所采用的光电材料,本发明的有益效果在于:
1、本发明的一种含有苯甲醚/苯甲硫醚基咔唑的膦酸化合物,引入具有强推电子能力的苯甲醚或苯硫醚基团,提升了化合物的空穴传输能力,并能提升化合物的HOMO能级,缩小ITO玻璃和钙钛矿层的能隙,提升空穴注入能力,制备的器件可以有效降低器件的工作电压和提升器件效率。
2、本发明的一种含有苯甲醚/苯甲硫醚基咔唑的膦酸化合物,苯甲醚/苯甲硫醚基的引入,由于氧和硫原子具有孤对电子,可以跟氢原子形成氢键,增强分子间的相互作用,可以增强材料的热稳定性,并更容易形成致密层,增加分子间的电荷传输,且致密层可以更有效地阻挡空气和氧气对器件地侵蚀,同时还能改善空穴传输层和量子发光层的界面。
3、本发明的一种含有苯甲醚/苯甲硫醚基咔唑的膦酸化合物,膦酸基团的引入,有利于整体分子平面与钙钛矿层键合,形成完整覆盖,钝化钙钛矿层表面,从而减少电子传输过程的能量损失。
4、本发明的一种含有苯甲醚/苯甲硫醚基咔唑的膦酸化合物,可以有效地实现自组装形成单分子空穴传输材料,无需添加掺杂剂,器件制备简单,成本低,有利于推动钙钛矿太阳能电池和钙钛矿量子点实现产业化。
5、本发明的一种含有苯甲醚/苯甲硫醚基咔唑的膦酸化合物作为空穴传输材料,既可以应用在量子点器件上面,提高器件的发光亮度和效率,降低工作电压,也可以应用在钙钛矿太阳能电池领域,提高其光电转化效率和利用途径。
附图说明
图1为利用本发明的化合物制备的量子点电致发光器件的结构示意图;
图2为本发明的量子点电致发光器件的电压和电流密度关系图;
图3为本发明的量子点电致发光器件的电压和亮度关系图;
图4为本发明的量子点电致发光器件的电流密度和外量子效率关系图。
图5基于本发明的化合物1制备的钙钛矿电池电压和电流密度关系图;
图6基于本发明的化合物7制备的钙钛矿电池电压和电流密度关系图。
具体实施方式
下面结合附图以及具体实施方式,对本发明做进一步描述,但下述实施例仅为本发明的优选实施例,并非全部。基于实施方式中的实施例,本领域技术人员在没有做出创造性劳动的前提下所获得其它实施例,都属于本发明的保护范围。
实施例1
化合物1的合成
第一步:中间体1-1的合成
将3-溴咔唑(2.0g,8.13mmol),对甲氧基苯硼酸(1.3g,8.55mmol),碳酸钾(1.7g,12.30mmol)加入到三口烧瓶中,再加入甲苯(20mL),乙醇(10mL)和去离子水(10mL),氮气保护下加入Pd(PPh3)4(0.1g),加热回流反应10h,冷却,分液,有机相减压旋干后柱色谱分离,得到1.8g白色固体产物,产率81%。MS(ESI,m/z):[M+H]+calcd for:C19H16NO,274.1,found,274.3.
第二步:中间体1-2的合成
将中间体1-1(1.5g,5.49mmol),氢化钠(0.44g,11.00mmol)和DMF(20mL)加入到三口烧瓶中,氮气保护下搅拌0.5h,再加入2-溴乙基磷酸二乙酯(1.6g,和6.53mmol)继续搅拌5h。减压蒸馏除去溶剂,粗品柱色谱分离,得到1.8g产物,产率75%。MS(ESI,m/z):[M+H]+calcd for:C25H29NO4P,438.2,found,438.0.
第三步:化合物1的合成
将中间体1-2(1.5g,3.43mmol)和1,4-二氧六环(50mL)加入到三口烧瓶中,氮气保护下滴加三甲基溴硅烷(5.2g,33.97mmol),常温搅拌48h后,滴加甲醇(20mL)继续搅拌3h,再加入去离子水至反应液变浑浊,继续搅拌过夜,过滤出固体,依次用水和乙醚洗涤,烘干,得到1.1g产物,产率84%。1H NMR(400MHz,CDCl3)δ:8.10-8.15(m,2H),7.46-7.53(m,4H),7.38-7.40(m,1H),7.19-7.24(m,2H),6.91-6.95(m,2H),4.37(t,J=8.8Hz,2H),3.82(s,3H),2.51(t,J=8.8Hz,2H).HRMS(ESI,m/z):[M+H]+calcd for:C21H21NO4P,382.1203,found,382.1205.Anal.:calcd:C,66.14;H,5.29;N,3.67;O,16.78;P,8.12;found:C,66.15;H,5.31;N,3.64;P,8.10.
实施例2
化合物7的合成
第一步:中间体7-1的合成
合成方法同中间体1-1,产率58%。MS(ESI,m/z):[M]+calcd for:C19H15BrNO,352.0,found,352.4.
第二步:中间体7-2的合成
合成方法同中间体1-2,产率72%。MS(ESI,m/z):[M]+calcd for:C25H28BrNO4P,516.1,found,515.9.
第三步:化合物7的合成
合成方法同化合物1,产率81%。1HNMR(400MHz,CDCl3)δ:8.13-8.17(m,2H),7.50-7.54(m,3H),7.45-7.47(m,3H),6.93-6.97(m,2H),4.35(t,J=8.8Hz,2H),3.84(s,3H),2.52(t,J=8.8Hz,2H).HRMS(ESI,m/z):[M]+calcd for:C21H20BrNO4P,460.0308,found,460.0306.Anal.:calcd:C,54.80;H,4.16;Br,17.36;N,3.04;O,13.90;P,6.73;found:C,54.72;H,4.21;N,3.01;P,6.78.
实施例3
化合物15
第一步:中间体15-1的合成
合成方法同中间体1-1,产率81%。MS(ESI,m/z):[M+H]+calcd for:C21H20NO3,334.1,found,334.3.
第二步:中间体15-2的合成
合成方法同中间体1-2,产率74%。MS(ESI,m/z):[M+H]+calcd for:C27H33NO6P,498.2,found,498.1.
第三步:化合物15的合成
合成方法同化合物1,产率78%。1HNMR(400MHz,CDCl3)δ:8.13-8.17(m,2H),7.50-7.54(m,3H),7.45-7.47(m,3H),6.93-6.97(m,2H),4.35(t,J=8.8Hz,2H),3.84(s,3H),2.52(t,J=8.8Hz,2H).HRMS(ESI,m/z):[M+H]+calcd for:C23H25NO6P,442.1414,found,442.1417.Anal.:calcd:C,62.58;H,5.48;N,3.17;O,21.75;P,7.02;found:C,62.62;H,5.51;N,3.12;P,6.98.
实施例4
化合物21的合成
第一步:中间体21-1的合成
合成方法同中间体1-1,产率77%。MS(ESI,m/z):[M+H]+calcd for:C28H26NO4,440.2,found,440.2.
第二步:中间体21-2的合成
合成方法同中间体1-2,产率79%。MS(ESI,m/z):[M+H]+calcd for:C34H39NO7P,604.2,found,604.3.
第三步:化合物21的合成
合成方法同化合物1,产率85%。1HNMR(400MHz,CDCl3)δ:8.08-8.12(m,2H),7.61-7.63(m,2H),7.45-7.49(m,4H),6.75-6.78(m,2H),6.56-6.58(m,2H),4.34(t,J=8.8Hz,2H),3.86(s,6H),3.80(s,6H),2.51(t,J=8.8Hz,2H).HRMS(ESI,m/z):[M+H]+calcd for:C30H31NO7P,548.1833,found,548.1835.Anal.:calcd:C,65.81;H,5.52;N,2.56;O,20.45;P,5.66;found:C,65.86;H,5.55;N,2.62;P,5.69.
实施例5
化合物27的合成
第一步:中间体27-1的合成
将3,6-而溴咔唑(5g,15.38mmol),1,4-二溴丁烷(10.0g,46.31mmol)和四氢呋喃(100mL)加入到三口烧瓶中,再加入四丁基溴化铵(0.5g,1.55mmol)和50wt%KOH水溶液(15mL),回流反应5h。浓缩掉四氢呋喃,再用二氯甲烷萃取,有机相干燥后浓缩干,柱色谱分离,得到5.1g产物,产率72%。MS(ESI,m/z):[M]+calcd for:C16H14Br3N,456.9,found,457.3.
第二步:中间体27-2的合成
将中间体27-1(5g,10.87mmol)和磷酸三乙酯(30mL)加入到单口烧瓶中,回流反应6h,减压蒸馏除掉磷酸三乙酯,粗产品柱色谱分离,得到产物4.8g,产率85%。MS(ESI,m/z):[M]+calcd for:C20H24Br2NO3P,515.0,found,515.1.
第三步:中间体27-3的合成
将中间体27-2(1.5g,2.90mmol),2,4-二甲氧基苯硼酸(1.2g,6.59mmol)和碳酸钾(1.2g,8.68mmol)加入到三口烧瓶中,再加入甲苯(20mL),乙醇(10mL)和去离子水(10mL),氮气保护下加入二氯二三苯基膦钯(0.03g),回流反应8h,冷却,分液,有机相浓缩干柱色谱分离,得到产物1.3g,产率72%。MS(ESI,m/z):[M+H]+calcd for:C36H43NO7P,632.3,found,632.2.
第四步:化合物27的合成
合成方法同化合物1,产率82%。1HNMR(400MHz,CDCl3)δ:8.08-8.10(m,2H),7.63-7.64(m,2H),7.38-7.40(m,2H),7.28-7.31(m,2H),6.71-6.72(m,2H),6.64-6.67(m,2H),4.95(s,2H),4.38-4.45(m,2H),3.81(s,6H),3.80(s,6H),1.88-1.92(m,2H),1.66-1.68(m,4H).HRMS(ESI,m/z):[M+H]+calcd for:C32H35NO7P,576.2146,found,576.2145.Anal.:calcd:C,66.77;H,5.95;N,2.43;O,19.46;P,5.38;found:C,66.81;H,5.86;N,2.42;P,5.39.
实施例6
化合物36的合成
第一步:中间体36-1的合成
合成方法同中间体27-1,产率70%。MS(ESI,m/z):[M]+calcd for:C16H14Br3N,456.9,found,457.1.
第二步:中间体36-2的合成
合成方法同中间体27-2,产率81%。MS(ESI,m/z):[M]+calcd for:C20H24Br2NO3P,515.0,found,514.8.
第三步:中间体36-3的合成
合成方法同中间体27-3,产率72%。MS(ESI,m/z):[M+H]+calcd for:C36H43NO7P,632.3,found,632.4.
第四步:化合物36的合成
合成方法同化合物1,产率79%。1HNMR(400MHz,CDCl3)δ:8.08-8.10(m,2H),7.64(s,2H),7.38-7.40(m,2H),7.28-7.31(m,2H),6.71-6.72(m,2H),6.64-6.67(m,2H),4.95(s,2H),4.40-4.43(m,2H),3.83(s,6H),3.82(s,6H),1.88-1.92(m,2H),1.66-1.68(m,4H).HRMS(ESI,m/z):[M+H]+calcd for:C32H35NO7P,576.2146,found,576.2144.Anal.:calcd:C,66.77;H,5.95;N,2.43;O,19.46;P,5.38;found:C,66.73;H,5.97;N,2.45;P,5.41.
实施例7
化合物47的合成
第一步:中间体47-1的合成
合成方法同中间体1-1,产率79%。MS(ESI,m/z):[M+H]+calcd for:C28H26NO4,440.2,found,440.1.
第二步:中间体47-2的合成
合成方法同中间体1-2,产率84%。MS(ESI,m/z):[M+H]+calcd for:C38H39NO7P,652.2,found,652.0.
第三步:化合物47的合成
合成方法同化合物1,产率74%。1HNMR(400MHz,CDCl3)δ:8.06-8.09(m,2H),7.75-7.77(m,2H),7.59-7.63(m,4H),7.50-7.52(m,2H),7.40-7.43(m,2H),6.75-6.78(m,2H),6.56-6.57(m,2H),3.86(s,6H),3.78(s,6H).HRMS(ESI,m/z):[M+H]+calcd for:C34H31NO7P,596.1833,found,596.1831.Anal.:calcd:C,68.57;H,5.08;N,2.35;O,18.80;P,5.20;found:C,68.61;H,5.11;N,2.32;P,5.15.
实施例8
化合物56的合成
第一步:中间体56-1的合成
合成方法同中间体27-3,产率78%。MS(ESI,m/z):[M+H]+calcd for:C34H39NO3PS2,604.2,found,604.4.
第二步:化合物27的合成
合成方法同化合物1,产率77%。1HNMR(400MHz,CDCl3)δ:8.03-8.06(m,2H),7.64-7.68(m,6H),7.45-7.47(m,2H),7.28-7.32(m,4H),4.03-4.07(m,2H),2.49(s,6H),2.14-2.20(m,2H),1.76-1.88(m,4H).HRMS(ESI,m/z):[M+H]+calcd for:C30H31NO3PS2,548.1477,found,548.1474.Anal.:calcd:C,65.79;H,5.52;N,2.56;O,8.76;P,5.66;S,11.71;found:C,65.83;H,5.48;N,2.52;P,5.59;S,11.76.
实施例9
使用本发明的空穴传输材料制备量子点电致发光器件。器件结构为:
ITO/空穴注入层/空穴传输层(本发明化合物)/量子点/电子传输层/电子注入层/阴极。具体器件结构如图1。
本实施例中制备的器件9至16中所采用的电子传输层TPBi材料的结构式如下:
器件的制备:PEDOT:PSS(PEDOT是3,4-乙烯二氧噻吩单体的聚合物,PSS是聚苯乙烯磺酸盐)溶液(Baytron PVPAl 4083,通过0.22μm过滤头过滤)在空气环境中通过旋涂法在洁净的ITO玻璃上制备成膜(3000r/min,60s),140℃退火15min后作为空穴注入层,然后转移到氮气气氛的手套箱中。将溶于乙醇的空穴传输材料化合物1(浓度为15mg/mL)旋涂在PEDOT:DSS层上,150℃退火15min。然后将溶于正辛烷的钙钛矿量子点以3000r/min,60s旋涂在空穴传输层上,量子点层60℃退火10min。将样品转移到热蒸发系统中,在~2×10-4Pa的高真空环境下分别沉积40nm TPBi作为电子传输层,然后蒸镀1nmLiF作为电子注入层,然后蒸镀100nmAl作为阴极。器件结构如图1,器件的发光面积是9平方毫米,这由ITO阳极和Al阴极的重叠区域确定。
器件的EL光谱、J-V-L曲线、外量子效率都是通过一个集成的LED测试系统获得的,包括积分球,Keithley 2400光源,PMA-12光谱仪(测量设备由滨松光电有限公司设计)。fibre integration sphere,Keithley 2400source,PMA-12spectrometer(HamamatsuPhotonics Co.,Ltd.)所得数据是未封装器件在室温下氮气气氛的手套箱中测试得到,测试结果分别见如图2-4和表1,表1为量子点器件在20mA/cm2下的性能参数。
实施例10-16
使用本发明的空穴传输材料制备量子点电致发光器件。器件结构为:
ITO/空穴注入层/空穴传输层(本发明化合物)/量子点/电子传输层/电子注入层/阴极。具体的器件和测试方法跟实施例9的一样,所用的空穴传输层为本发明的其他化合物,具体的器件结果表1.
对比例1
使用化合物CzP(结构式如下)作为空穴传输材料制备量子点发光器件,其他的制备方法跟实施例9一样。
表1量子点发光器件性能参数
如图2-4和表1,在相同条件下制备的量子点发光器件,本发明的化合物作为空穴传输材料应用在量子点器件中,由于苯甲醚和苯硫醚的引入,增加了空穴传输能力,电压从3.88V降低到3.5V-3.7V,最大发光亮度从5278cd/m2提升到6113到7147cd/m2,达到50%-100%的提升,并且,最大量子效率也从6.8%提升到8%-9.4%。可以看出,本发明化合物作为空穴传输材料可以有效地降低器件的工作电压,并显示出更高的发光亮度和发光效率。
实施例17
使用本发明的空穴传输材料制备钙钛矿太阳能电池上,器件结构为:ITO/本发明化合物(空穴传输层)/钙钛矿/C60/BCP/Cu。
钙钛矿太阳能电池的制备方法:
本发明化合物1作为空穴传输材料制作钙钛矿太阳能电池器件,包括如下步骤:
1)空穴传输层的制备:使用超干乙醇配置空穴传输材料溶液(1mmol L-1),将溶液旋涂在洁净ITO表面,100℃退火10分钟,冷却至室温待用;
2)钙钛矿层的制备:将PbI2、MABr、PbBr2、FAI、CsI溶于DMF:DMSO=4:1的混合溶液中(1.5M)形成化学式为Cs0.05(MA0.05FA0.95)0.95Pb(Br0.05I0.95)3钙钛矿前驱体溶液,50℃搅拌12小时,再以氯苯为反溶剂,通过“一步法”在空穴传输层上沉积一层钙钛矿膜;
3)电子传输层和空穴阻挡层的制备:使用氯苯配制[6,6]-phenyl-C61-butyricacidmethyl ester(PCBM)溶液(20mg mL-1),50℃搅拌过夜,然后将此溶液旋涂于钙钛矿层上,空穴阻挡层由旋涂浴灵铜(BCP)的饱和溶液得到;
4)在空穴阻挡层上真空蒸镀100nm的银作为对电极。
钙钛矿太阳能电池的性能测试:
将此钙钛矿太阳能电池,放置于AM1.5的模拟太阳光下测量其电流密度-电压曲线(测试仪器为(Keithley 2400数字源表(美国Keithley公司))。测试结果如表2和图
实施例18-24
器件的制备方法跟实施例17一样,除了空穴传输层材料不一样外,具体的器件结果如表2。
对比例2
器件的制备方法跟实施例17一样,除了空穴传输层材料用CzP不一样外,具体的器件结果如表2。CzP的结构式、表2分别如下所示:
表2钙钛矿太阳能性能参数
如图5-6和表2,在相同条件下制备的钙钛矿电池,利用本发明的化合物作为空穴传输材料应用在电池中,由于苯甲醚和苯硫醚的引入,增加了空穴传输能力,电池的开路电压从1.01V升到1.04-1.17V,填充因子从0.73提升到0.75-0.81,光电转换效率也从21.2%提升到22.7-23.8%,短路电流从19.8提升到20.3-21.9mA cm-2。可以看出引入苯甲醚和苯硫醚,可以提升化合物的能级,增加空穴注入能力,提升光电转换性能。
以上详细描述了本发明的较佳具体实施例。应当理解,本领域的普通技术人员无需创造性劳动就可以根据本发明的构思做出诸多修改和变化。因此,凡本技术领域中技术人员依本发明的构思在现有技术的基础上通过逻辑分析、推理或者有限的实验可以得到的技术方案,皆应在由权利要求书所确定的保护范围内。
Claims (7)
1.一种含有苯甲醚/苯甲硫醚基咔唑的膦酸化合物,具有如式I所示的化学结构式:
式中,R1-R8至少有一个基团为苯甲醚基或者苯甲硫醚,其他独立地表示为氢、卤素、甲氧基、甲氧基苯基、间二甲氧基苯基、甲巯基苯基;
L表示为亚乙基,亚苯基,亚丁基中的任意一种。
2.如权利要求1所述的含有苯甲醚/苯甲硫醚基咔唑的膦酸化合物,其特征在于,所述的基于咔唑的膦酸化合物中的任意一种:
3.权利要求1或2中任一项所述的含有苯甲醚/苯甲硫醚基咔唑的膦酸化合物作为空穴传输材料的应用,其特征在于,作为空穴传输层中空穴传输材料应用于有机量子点电致发光器件、钙钛矿太阳能电池。
4.如权利要求3所述的应用,其特征在于,所述的空穴传输层通过真空蒸镀法、分子束蒸镀法、溶于溶剂的浸涂法、旋涂法、棒涂法或者喷墨打印法中的任意一种方法制得。
5.如权利要求4所述的应用,其特征在于,所述的空穴传输层的厚度为1~500nm。
6.一种量子点电致发光器件,含有空穴传输层,其特征在于,所述的空穴传输层中空穴传输材料含有如权利要求1或2中任一项所述的含有苯甲醚/苯甲硫醚基咔唑的膦酸化合物。
7.一种钙钛矿太阳能电池,含有空穴传输层,其特征在于,所述的空穴传输层为含有如权利要求1或2中任一项所述的含有苯甲醚/苯甲硫醚基咔唑的膦酸化合物的单分子层。
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