CN116404062A - Three-junction laminated solar cell and preparation method thereof - Google Patents
Three-junction laminated solar cell and preparation method thereof Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/0725—Multiple junction or tandem solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
Abstract
The application discloses a three knot stromatolite solar cell includes: the first solar cell, the second solar cell and the third solar cell are sequentially stacked, the band gap of the first solar cell is regarded as a, the band gap of the second solar cell is regarded as b, the band gap of the third solar cell is regarded as c, a > b > c, the value range of a is 2.0ev-2.5ev, the value range of b is 1.4ev-1.7ev, and the value range of c is 1.1ev-1.5ev. The application also provides a preparation method of the solar cell. The three-junction laminated solar cell provided by the application adopts a three-layer laminated structure, and the cell band gap of the three-layer laminated structure is sequentially reduced from top to bottom, so that the solar cell not only can ensure full spectrum absorption, but also has large band gap adjustability, improves the cell performance, and can reduce the cost and simplify the preparation process.
Description
Technical Field
The application relates to the technical field of solar cells, in particular to a three-junction laminated solar cell and a preparation method thereof.
Background
The perovskite solar cell has become a new star of the current solar cell technology by virtue of the advantages of convenient and quick preparation process, excellent photoelectric conversion efficiency, potential of developing low cost and the like, and the efficiency of the perovskite solar cell is equivalent to that of a commercial silicon-based solar cell from the initial 3.8% to the 25.5% in decades. By controlling the types and the contents of the A-site ions and the X-site ions of the perovskite semiconductor material, a perovskite absorption layer with the band gap of 1.2-3.0eV can be obtained, and a solar cell with a laminated structure is formed by the perovskite absorption layer and a solar cell with a wide band gap, so that the distribution and absorption of spectrum are realized, the energy loss caused by carrier relaxation is reduced, and the conversion efficiency from the light energy to the electric energy of the solar cell is improved. The sub-cells with more narrow band gaps can absorb photons with lower energy through band gap combination of the sub-cells in the laminated cell, so that the spectrum absorption range is expanded; and the sub-cell with wider band gap can absorb photons with higher energy, so that photon energy can be effectively utilized, and a multi-junction series mode is generally adopted in experiments. The basic structure is that the sub-cells with different band gaps are mutually connected in series from big to small according to the band gaps, and incident light is correspondingly absorbed by each sub-cell to realize the efficient utilization of solar spectrum within the whole band range. Ideally, the open circuit voltage is the sum of the open circuit voltages of the sub-cells, and the current is determined by the sub-cell with the smallest output current, and the different sub-cells are in superconductive connection. However, from the experimental point of view, the concept of the laminated cell is realized, and the complexity of experimental preparation needs to be considered, in general, the laminated cell is mainly a two-junction laminated cell, by directly growing a perovskite cell on a crystalline silicon cell, and connecting two sub-cells in series through a composite layer or a tunnel junction in the middle, the laminated cell at two ends only needs one wide spectrum transparent electrode, which is beneficial to reducing the manufacturing cost, but the current of the two-junction laminated cell connected in series is determined by the smaller current in the two sub-cells, so that the two sub-cells are required to have similar currents, and the current matching requirement limits the ideal band gap of the top cell to be within the narrow range of 1.7-1.8 eV, thereby limiting the efficiency of the laminated cell.
Disclosure of Invention
Aiming at the problems, the application provides a three-junction laminated solar cell which can ensure full spectrum absorption, has large band gap adjustability, improves the cell performance, reduces the cost and simplifies the preparation process.
The application provides a three-junction stacked solar cell, comprising: the first solar cell, the second solar cell and the third solar cell are sequentially stacked, wherein the band gap of the first solar cell is a, the band gap of the second solar cell is b, the band gap of the third solar cell is c, a > b > c, the value range of a is 2.0ev-2.5ev, the value range of b is 1.4ev-1.7ev, and the value range of c is 1.1ev-1.5ev.
Further, the light absorption layer of the first solar cell is selected from a cuprous oxide layer or a perovskite layer,
preferably, the perovskite layer is selected from one of a ternary perovskite layer, a tin-based perovskite layer or a lead tin perovskite layer.
Further, the light absorption layer of the second solar cell is a ternary perovskite layer.
Further, the light absorption layer of the third solar cell is a silicon-based layer.
Further, the first solar cell is a cuprous oxide solar cell or a perovskite solar cell;
preferably, the perovskite solar cell is selected from a ternary perovskite solar cell, a tin-based perovskite solar cell or a lead-tin perovskite solar cell.
Further, the second solar cell is a perovskite solar cell.
Further, the third solar cell is one of a silicon heterojunction cell, a TOPCON cell or a PERC cell;
further, a first composite layer is laminated between the first solar cell and the second solar cell; and/or
A second composite layer is laminated between the second solar cell and the third solar cell.
Further, the first solar cell is a trans-structure cell; and/or
The second solar cell is a cell with a trans-structure.
The application provides a preparation method of a three-junction laminated solar cell, which comprises the following steps:
preparing a third solar cell;
preparing a second solar cell;
preparing a first solar cell;
the band gap of the first solar cell is regarded as a, the band gap of the second solar cell is regarded as b, the band gap of the third solar cell is regarded as c, a > b > c, the value range of a is 2.0ev-2.5ev, the value range of b is 1.4ev-1.7ev, and the value range of c is 1.1ev-1.5ev.
Further, preparing a second composite layer on one side surface of the third solar cell;
preparing a second solar cell on the surface of one side of the second composite layer, which faces away from the third solar cell;
preparing a first composite layer on the surface of one side of the second solar cell, which is away from the second composite layer;
and preparing the first solar cell on the surface of one side of the first composite layer, which faces away from the second solar cell.
Further, the solar cell prepared by the preparation method is the solar cell.
The three-junction laminated solar cell provided by the application adopts a three-layer laminated structure, and the cell band gap of the three-layer laminated structure is sequentially reduced from top to bottom, so that the solar cell not only can ensure full spectrum absorption, but also has large band gap adjustability, improves the cell performance, and can reduce the cost and simplify the preparation process.
Drawings
The drawings are included to provide a better understanding of the present application and are not to be construed as unduly limiting the present application. Wherein:
fig. 1 is a schematic structural diagram provided in the present application.
Description of the reference numerals
1-a first metal electrode layer, 2-a first solar cell, 3-a first composite layer, 4-a second solar cell, 5-a second composite layer, 6-a third solar cell and 7-a second metal electrode layer.
Detailed Description
Exemplary embodiments of the present application are described below, including various details of embodiments of the present application to facilitate understanding, which should be considered as merely exemplary. Accordingly, one of ordinary skill in the art will recognize that various changes and modifications of the embodiments described herein can be made without departing from the scope and spirit of the present application. Also, descriptions of well-known functions and constructions are omitted in the following description for clarity and conciseness. The upper and lower positions in this application depend on the direction of incidence of the light, where the light is incident.
As shown in fig. 1, the present application provides a three-junction stacked solar cell, including: the first solar cell 2, the second solar cell 4 and the third solar cell 6 are stacked in this order, and the band gap of the first solar cell 2 is a, the band gap of the second solar cell 4 is b, the band gap of the third solar cell 6 is c, a > b > c, the value range of a is 2.0ev-2.5ev, the value range of b is 1.4ev-1.7ev, and the value range of c is 1.1ev-1.5ev.
Specifically, a may be 2.0ev, 2.1ev, 2.2ev, 2.3ev, 2.4ev, or 2.5ev.
b may be 1.4ev, 1.5ev, 1.6ev or 1.7ev.
c may be 1.1ev, 1.2ev, 1.3ev, 1.4ev or 1.5ev.
The band gap measuring method comprises the following steps: the band gap is calculated by a cut-off method after measuring the ultraviolet-visible diffuse reflection spectrum of the material.
The three-junction laminated solar cell provided by the application adopts a three-layer laminated structure, the cell band gap of the three-layer laminated structure is sequentially reduced from top to bottom, sunlight sequentially irradiates downwards through the first solar cell, the first solar cell can strongly absorb sunlight short-wave band light to generate photo-generated carriers due to the fact that the band gap is large, the spectrum absorbed by each layer of cell is limited due to the fact that the band gap is established, the second solar cell absorbs middle-wave band light, and the third solar cell absorbs long-wave band light, so that the solar cell can ensure full-spectrum absorption, band gap adjustability is large, cell performance is improved, cost can be reduced, and a preparation process is simplified.
In the present application, the first solar cell 2 is a cuprous oxide solar cell or a perovskite solar cell.
Specifically, the perovskite solar cell is selected from a ternary perovskite solar cell, a tin-based perovskite solar cell or a lead-tin perovskite solar cell.
The light absorption layer of the first solar cell 2 is selected from cuprous oxide layer or perovskite layer which is ABX 3 The structure is that the A site selects ternary mixed cations which are Cs, FA, MA and PEA respectively; b is Pb and Sn metal ions; the X position adopts the mixed anion type of I and Br.
The perovskite layer is selected from one of a ternary perovskite layer, a tin-based perovskite layer or a lead-tin perovskite layer.
Specifically, the ternary perovskite layer is MA (1-x) FA x PbI (1-x) Br x It may be MAFAPbBr, for example 3 、MAFAPbI 3 、MAFAPb3I x Cl 1-x Etc.
Specifically, the tin-based perovskite layer is PEA 2 SnBr 4 、FASnBr 3 Layers or MASNRs 3 A layer.
Specifically, the lead tin perovskite layer is FASnBr 3 。
In the present application, the second solar cell 4 is a perovskite solar cell, preferably a ternary perovskite solar cell.
The light absorption layer of the second solar cell 4 is a ternary perovskite layer, which may be MA (1-x) FA x PbI (1-x) Cl x For example, the layer may be MAFAPbBr, MAFAPbI or MAFAPbCl, and x may be 0, 0.1, 0.2, 0.3, 0.4, 0.5, 0.6, 0.7, 0.8, 0.9 or 1.
In this application, the light absorbing layer of the third solar cell 6 is a silicon-based layer.
Specifically, the third solar cell 6 is one of a silicon heterojunction cell, a TOPCon cell or a PERC cell;
in the present application, a first composite layer 3 is laminated between the first solar cell 2 and the second solar cell 4.
In the present application, a second composite layer 5 is laminated between the second solar cell 4 and the third solar cell 6.
In this application, the first solar cell 2 is a trans-structured cell.
In this application, the second solar cell 4 is a trans-structure cell.
In the present application, the direction from top to bottom refers to the direction in which light irradiates, so that light irradiates on the first solar cell 2 first, the first solar cell 2 mainly absorbs short-wavelength light with a wavelength of 300nm to 550nm, the second solar cell 4 second mainly absorbs light with a middle wavelength of 400nm to 750nm, the third solar cell 6 last, and the third solar cell 6 mainly absorbs light with a long wavelength of 750nm to 1200nm.
In a specific embodiment, when the first solar cell 2 is a perovskite cell, the second solar cell 4 is a perovskite cell, and when the third solar cell 6 is a silicon heterojunction cell, the first solar cell 2 includes a first metal electrode layer 1, a first transparent conductive layer, a first electron transport layer, a first perovskite absorption layer, a first hole transport layer, and a first buffer layer (the first buffer layer may or may not be present) that are sequentially stacked from top to bottom. The second solar cell 4 includes a second electron transport layer, a second perovskite absorption layer, a second hole transport layer, and a second buffer layer (the second buffer layer may or may not be present) that are sequentially stacked from top to bottom. The third solar cell 6 comprises a first doped layer, a first passivation layer, a silicon substrate, a second passivation layer, a second doped layer, a second transparent conductive layer and a second metal electrode layer 7 which are sequentially stacked from top to bottom. The first buffer layer is laminated with the second electron transport layer through the first composite layer 3, and the second buffer layer is laminated with the first doped layer through the second composite layer 5. That is, the three-junction laminated solar cell includes, from top to bottom, a first metal electrode layer 1, a first transparent conductive layer, a first electron transport layer, a first perovskite absorption layer, a first hole transport layer, a first buffer layer, a first composite layer 3, a second electron transport layer, a second perovskite absorption layer, a second hole transport layer, a second buffer layer, a second composite layer 5, a first doped layer, a first passivation layer, a silicon substrate, a second passivation layer, a second doped layer, a second transparent conductive layer, and a second metal electrode layer 7, which are sequentially laminated.
In a specific embodiment, when the first solar cell 2 is a cuprous oxide cell, the second solar cell 4 is a perovskite cell, and when the third solar cell 6 is a silicon heterojunction cell, the first solar cell 2 includes a first metal electrode, a first electron transport layer, a cuprous oxide layer, a first hole transport layer, and a first buffer layer (the first buffer layer may or may not be present) that are sequentially stacked from top to bottom. The second solar cell 4 includes a second electron transport layer, a second perovskite absorption layer, a second hole transport layer, and a second buffer layer (the second buffer layer may or may not be present) that are sequentially stacked from top to bottom. The third solar cell 6 comprises a first doped layer, a first passivation layer, a silicon substrate, a second passivation layer, a second doped layer, a second transparent conductive layer and a second metal electrode layer 7 which are sequentially stacked from top to bottom. The first hole transport layer is laminated with the second electron transport layer through a first composite layer 3, and the second buffer layer is laminated with the first doped layer through a second composite layer 5. Namely, the three-junction laminated solar cell comprises a first metal electrode layer 1, a first electron transport layer, a cuprous oxide layer, a first hole transport layer, a first buffer layer, a first composite layer 3, a second electron transport layer, a second perovskite absorption layer, a second hole transport layer, a second buffer layer, a second composite layer 5, a first doping layer, a first passivation layer, a silicon substrate, a second passivation layer, a second doping layer, a second transparent conducting layer and a second metal electrode layer 7 which are laminated in sequence from top to bottom.
Specifically, the first hole transport layer and the second hole transport layer may be a cuprous oxide layer, a molybdenum oxide layer, a [ bis (4-phenyl) (2, 4, 6-trimethylphenyl) amine ] (PTAA) layer, a copper iodide layer, or a Spiro-ome tad (2, 2', 7' -Tetrakis [ N, N-di (4-methoxyphenyl) amino ] -9,9 '-spirobifluorene) layer, a PEDOT: PSS layer, a P3HT layer, a P3OHT layer, a P3ODDT layer, a NiOx layer, or a CuSCN layer, which are named as 2,2', 7'-tetra [ N, N-bis (4-methoxyphenyl) amino ] -9,9' -spirobifluorene, including, but not limited to, as long as the functions in the present application can be realized.
The first electron transport layer and the second electron transport layer may be titanium oxide layers, tin oxide layers, C60 layers or C60-PCBM layers, [60] PCBM ([ 6,6] -Phenyl-C61 butyric acidmethyl ester, chinese name [6,6] -Phenyl-C61-butyric acid isopropyl ester) layers, [70] PCBM ([ 6,6] -Phenyl-C71-butyric acid methyl ester, chinese name [6,6] -Phenyl-C71-butyric acid isopropyl ester) layers, bis [60] PCBM (Bis (1- [3- (methoxycarbonyl) -1-Phenyl) - [6,6] C62) layers, [60] icba (1 ',1",4',4" -tetrahydrochyseno-di [1,4] methylpheno 1,2:2',3',56,60:2",3" ] [5,6] functional-C60) layers, etc., but the functions are not limited thereto.
The thickness of the first hole transport layer and the second hole transport layer is 5-100nm, and may be, for example, 5nm, 10nm, 15nm, 20nm, 25nm, 30nm, 35nm, 40nm, 45nm, 50nm, 55nm, 60nm, 65nm, 70nm, 75nm, 80nm, 85nm, 90nm, 95nm or 100nm.
The thickness of the first electron transport layer and the second electron transport layer is 1-50nm, for example, 1nm, 5nm, 10nm, 15nm, 20nm, 25nm, 30nm, 35nm, 40nm, 45nm or 50nm.
The first buffer layer and the second buffer layer are used for longitudinal transportation of carriers, and simultaneously protect the perovskite absorption layer from sputtering damage by a subsequent PVD process, and can be SnO 2 Layers or TiO 2 The layer has a thickness of 1 to 50nm, and may be, for example, 1nm, 2nm, 3nm, 4nm, 5nm, 6nm, 7nm, 8nm, 9nm, 10nm, 11nm, 12nm, 13nm, 14nm, 15nm, 16nm, 17nm, 18nm, 19nm, 20nm, 21nm, 22nm, 23nm, 24nm, 25nm, 26nm, 27nm, 28nm, 29nm, 30nm, 31nm, 35nm, 33nm, 34nm, 35nm, 36nm, 37nm, 38nm, 39nm, 40nm, 41nm, 42nm, 43nm, 44nm, 45nm, 46nm, 47nm, 48nm, 49nm or 50nm.
The thickness of the first perovskite absorption layer is 300-500nm, and may be 300nm, 320nm, 340nm, 360nm, 380nm, 400nm, 420nm, 440nm, 460nm, 480nm or 500nm, for example.
The thickness of the second perovskite absorption layer is 400-600nm, and may be 400nm, 420nm, 440nm, 460nm, 480nm, 500nm, 520nm, 540nm, 560nm, 580nm or 600nm, for example.
The first transparent conductive layer and the second transparent conductive layer can be transparent conductive films, and specifically can be fluorine doped tin oxide (FTO), indium Tin Oxide (ITO), aluminum doped zinc oxide (AZO), or the like; the transparent conductive layer has a thickness of 1 to 20nm, and may be, for example, 1nm, 2nm, 3nm, 4nm, 5nm, 6nm, 7nm, 8nm, 9nm, 10nm, 11nm, 12nm, 13nm, 14nm, 15nm, 16nm, 17nm, 18nm, 19nm, or 20nm.
The first metal electrode layer 1 and the second metal electrode layer 7 may be made of one or more of a metal material such as Ag, au, cu, al, ni, a C material, and a polymer conductive material.
The silicon substrate is N-type monocrystalline silicon.
The first passivation layer and the second passivation layer can be an intrinsic amorphous silicon passivation layer, an intrinsic microcrystalline silicon layer and an intrinsic amorphous microcrystalline mixed layer. The thickness is 5-20nm, and may be, for example, 5nm, 6nm, 7nm, 8nm, 9nm, 10nm, 11nm, 12nm, 3nm, 14nm, 15nm, 16nm, 17nm, 18nm, 19nm or 20nm.
The first doped layer is an n-type phosphorus doped amorphous silicon layer, and the thickness of the first doped layer is 5-20nm, for example, 5nm, 6nm, 7nm, 8nm, 9nm, 10nm, 11nm, 12nm, 3nm, 14nm, 15nm, 16nm, 17nm, 18nm, 19nm or 20nm.
The second doped layer is a p-type boron-doped amorphous silicon layer, and the thickness of the second doped layer is 5-20nm, for example, the second doped layer can be 5nm, 6nm, 7nm, 8nm, 9nm, 10nm, 11nm, 12nm, 3nm, 14nm, 15nm, 16nm, 17nm, 18nm, 19nm or 20nm.
The first composite layer 3 and the second composite layer 5 may be ITO layers or IZO layers, and the thickness thereof may be 2-50nm, for example, 2nm, 5nm, 10nm, 15nm, 20nm, 25nm, 30nm, 35nm, 40nm, 45nm, or 50nm.
The cuprous oxide layer has a thickness of 3-80nm, for example, 3nm, 5nm, 10nm, 15nm, 20nm, 25nm, 30nm, 35nm, 40nm, 45nm, 50nm, 55nm, 60nm, 65nm, 70nm, 75nm or 80nm.
Specifically, 1-10nm of Au can be evaporated on the surfaces of the first transparent conductive layer, the second transparent conductive layer, the first composite layer, the second composite layer, the first buffer layer, the second buffer layer and the cuprous oxide layer.
The application also provides a preparation method of the solar cell, which comprises the following steps:
step one: preparing a third solar cell 6;
specifically, after the third solar cell 6 is manufactured, the second composite layer 5 is manufactured on one side surface of the third solar cell 6.
Step two: preparing a second solar cell 4;
specifically, the second solar cell 4 is prepared on a side surface of the second composite layer 5 facing away from the third solar cell 6, and then the first composite layer 3 is prepared on a side surface of the second solar cell 4 facing away from the second composite layer 5.
Step three: preparing a first solar cell 2;
specifically, a first solar cell 2 is prepared on a surface of the first composite layer 3 on a side facing away from the second solar cell 4.
The band gap of the first solar cell 2 is a, the band gap of the second solar cell 4 is b, the band gap of the third solar cell 6 is c, a > b > c, the value range of a is 2.0ev-2.2ev, the value range of b is 1.4ev-1.7ev, and the value range of c is 1.3ev-1.5ev.
In one specific embodiment, when the first solar cell 2 and the second solar cell 4 are perovskite cells and the third solar cell 6 is a silicon heterojunction cell, the preparation method of the three-junction stacked solar cell is as follows:
step one: preparation of third solar cell 6
Step 1a: and (3) sequentially polishing, texturing, coating and cleaning the silicon wafer to form a silicon substrate.
Specifically, an n-type silicon wafer of commercial grade M6 is adopted, and an n-type silicon substrate containing a suede structure is formed through alkali solution polishing, texturing and cleaning.
Step 1b: passivation layers, namely a first passivation layer and a second passivation layer, are respectively prepared on the two side surfaces of the silicon substrate.
Specifically, intrinsic amorphous silicon passivation layers are sequentially deposited on the front side and the back side of an n-type silicon substrate respectively in Plasma Enhanced Chemical Vapor Deposition (PECVD) equipment, namely the first passivation layer is a first intrinsic amorphous silicon passivation layer, and the second passivation layer is a second intrinsic amorphous silicon passivation layer.
Step 1c: and forming a first doping layer on the surface of one side of the first passivation layer, which faces away from the silicon substrate.
Specifically, an n-type amorphous silicon emitter is deposited on a side surface of the first passivation layer facing away from the silicon substrate using a hydrogen diluted phosphine and silane mixture gas.
Step 1d: and forming a second doping layer on the surface of one side of the second passivation layer, which faces away from the silicon substrate.
Specifically, a p-type amorphous silicon back surface is deposited on the surface of the side of the second passivation layer facing away from the silicon substrate by using a mixed gas of diborane diluted by hydrogen and silane.
Step 1e: and forming a second composite layer 5 on the surface of one side of the first doped layer, which is away from the first passivation layer.
Step two: preparation of the second solar cell 4
Step 2a: a second buffer layer is formed on a side surface of the second composite layer 5 facing away from the third solar cell 6.
Step 2b: and forming a second hole transport layer on the surface of one side of the second buffer layer, which faces away from the second composite layer 5.
Step 2c: forming a perovskite absorption layer on the surface of one side of the second electron transport layer, which is away from the second buffer layer;
step 2d: forming a second electron transport layer on the surface of one side of the perovskite absorption layer, which is away from the second electron transport layer;
step 2e: and a second buffer layer and a first composite layer 3 are sequentially formed on the surface of one side of the second hole transport layer, which is away from the perovskite absorption layer.
Step three: preparation of the first solar cell 2
Step 3a: a first buffer layer is formed on a surface of the first composite layer 3 facing away from the second hole transport layer.
Step 3b: a first hole transport layer is formed on a surface of the first buffer layer on a side facing away from the first composite layer 3.
Step 3c: and forming a first perovskite gettering layer on the surface of one side of the first electron transport layer, which is away from the first buffer layer.
Step 3d: and forming a first electron transport layer on the surface of one side of the first perovskite absorption layer, which is away from the first electron transport layer.
Step 3e: and forming a first transparent conductive layer on the surface of one side of the first electron transport layer, which is away from the first perovskite absorption layer. And forming a second transparent conductive layer on the surface of one side of the second doped layer, which is away from the second passivation layer.
Step 3f: preparing a first metal electrode on the surface of one side of the first transparent conducting layer, which is away from the first electron transport layer, and preparing a second metal electrode on the surface of one side of the second transparent conducting layer, which is away from the second doping layer, so as to obtain the three-junction laminated solar cell.
In a specific embodiment, when the first solar cell 2 is a cuprous oxide solar cell, the second solar cells 4 are all perovskite cells, and the third solar cell 6 is a silicon heterojunction cell, the preparation method of the three-junction stacked solar cell is as follows:
step one: preparation of third solar cell 6
Step 1a: and (3) sequentially polishing, texturing, coating and cleaning the silicon wafer to form a silicon substrate.
Specifically, an n-type silicon wafer of commercial grade M6 is adopted, and an n-type silicon substrate containing a suede structure is formed through alkali solution polishing, texturing and cleaning.
Step 1b: passivation layers, namely a first passivation layer and a second passivation layer, are respectively prepared on the two side surfaces of the silicon substrate.
Specifically, intrinsic amorphous silicon passivation layers are sequentially deposited on the front side and the back side of an n-type silicon substrate respectively in Plasma Enhanced Chemical Vapor Deposition (PECVD) equipment, namely the first passivation layer is a first intrinsic amorphous silicon passivation layer, and the second passivation layer is a second intrinsic amorphous silicon passivation layer.
Step 1c: and forming a first doping layer on the surface of one side of the first passivation layer, which faces away from the silicon substrate.
Specifically, an n-type amorphous silicon emitter is deposited on a side surface of the first passivation layer facing away from the silicon substrate using a hydrogen diluted phosphine and silane mixture gas.
Step 1d: and forming a second doping layer on the surface of one side of the second passivation layer, which faces away from the silicon substrate.
Specifically, a p-type amorphous silicon back surface is deposited on the surface of the side of the second passivation layer facing away from the silicon substrate by using a mixed gas of diborane diluted by hydrogen and silane.
Step 1e: and forming a second composite layer 5 on the surface of one side of the first doped layer, which is away from the first passivation layer.
Step two: preparation of the second solar cell 4
Step 2a: a second buffer layer is formed on a side surface of the second composite layer 5 facing away from the third solar cell 6.
Step 2b: and forming a second electron transport layer on the surface of one side of the second buffer layer, which faces away from the second composite layer 5.
Step 2c: forming a perovskite absorption layer on the surface of one side of the second electron transport layer, which is away from the second buffer layer;
step 2d: forming a second hole transport layer on the surface of one side of the perovskite absorption layer, which is away from the second electron transport layer;
step 2e: a first composite layer 3 is formed on a surface of the second hole transport layer on a side facing away from the perovskite absorption layer.
Step three: preparation of the first solar cell 2
Step 3a: a first buffer layer is formed on a surface of the first composite layer 3 facing away from the second hole transport layer.
Step 3b: a first hole transport layer is formed on a surface of the first buffer layer on a side facing away from the first composite layer 3.
Step 3c: and epitaxially growing a single-phase polycrystalline cuprous oxide film on the surface of one side of the first electron transport layer, which is away from the first buffer layer, by using MOCVD to form a cuprous oxide layer.
Step 3d: and forming a first electron transport layer on the surface of one side of the first perovskite absorption layer, which is away from the first electron transport layer.
Step 3e: and forming a first transparent conductive layer on the surface of one side of the first electron transport layer, which is away from the cuprous oxide layer. And forming a second transparent conductive layer on the surface of one side of the second doped layer, which is away from the second passivation layer.
Step 3f: preparing a first metal electrode on the surface of one side of the first transparent conducting layer, which is away from the first electron transport layer, and preparing a second metal electrode on the surface of one side of the second transparent conducting layer, which is away from the second doping layer, so as to obtain the three-junction laminated solar cell.
In the present application, the three-junction stacked solar cell prepared by the method is the three-junction stacked solar cell, and for details, reference may be made to the description of the three-junction stacked solar cell.
Examples
The experimental methods used in the following examples are conventional methods, if no special requirements are imposed.
Materials, reagents and the like used in the examples described below are commercially available unless otherwise specified.
Example 1
In the three-junction stacked solar cell of the present embodiment, the first solar cell and the second solar cell are perovskite solar cells, and the third solar cell is a silicon heterojunction cell, and the specific preparation method is as follows:
step one: preparation of a third solar cell
Step 1a: an n-type silicon wafer with the thickness of 150-200 mu M and the resistivity of 5 omega cm and commercial grade M6 is adopted, and an n-type silicon substrate with a suede structure is formed through alkali solution polishing, texturing and cleaning.
Step 1b: and sequentially depositing 10nm intrinsic amorphous silicon passivation layers on the front side and the back side of an n-type silicon substrate respectively in Plasma Enhanced Chemical Vapor Deposition (PECVD) equipment, wherein the first passivation layer is a first intrinsic amorphous silicon passivation layer, and the second passivation layer is a second intrinsic amorphous silicon passivation layer.
Step 1c: and depositing an n-type amorphous silicon emitter with the thickness of 10nm on the surface of one side of the first passivation layer, which is away from the silicon substrate, by utilizing hydrogen diluted phosphane and silane mixed gas.
Step 1d: and depositing a p-type amorphous silicon back surface with the thickness of 15nm on the surface of one side of the second passivation layer, which is away from the silicon substrate, by utilizing mixed gas of diborane diluted by hydrogen and silane.
Step 1e: and preparing a second composite layer on the surface of one side of the n-type amorphous silicon emitter facing away from the first passivation layer. The second composite layer is a TCO layer, and the thickness of the TCO layer is 10nm.
Step two: preparation of a second solar cell
Step 2a: preparing 10nm SnO on the surface of one side of the second composite layer, which is far away from the n-type amorphous silicon emitter, by adopting atomic layer deposition equipment 2 A layer.
Step 2b: by using
Evaporation rate at the SnO 2 And evaporating a 10nm C60 layer on the surface of one side of the layer facing away from the second composite layer.
Step 2c: away from the SnO at the C60 layer 2 Forming a second perovskite absorption layer on one side surface of the layer;
the method comprises the following steps: preparing perovskite precursor liquid
According to Cs 0.05 (FA 0.23 MA 0.77 ) 0.95 Pb(I 0.23 Br 0.77 ) 3 The precursor solution having a concentration of 1.7M was prepared by weighing a certain amount of lead iodide (PbI 2 ) Lead bromide (PbBr) 2 ) Formamidine hydroiodide (FAI), methylamine hydrobromide (MABr), and a mixed solution of N, N-Dimethylformamide (DMF) and dimethyl sulfoxide (DMSO) (volume ratio 4: 1) And stirring the solution for 2 hours to obtain the perovskite precursor solution.
70-100 microliters of the perovskite precursor liquid is taken by a liquid-transferring gun and is dripped into the C60 layer which is far away from the SnO 2 After spreading the central area of one side surface of the layer, starting spin coating, wherein the spin coating process is 2000-5000r/s, turning 40s, dripping 300 microliters of anti-solvent ethyl acetate at the time of the 10s of the last time, and after finishing spin coating, placing the layer on a hot table at 100-130 ℃ for annealing for 10-30min, thereby forming a second perovskite absorption layer with the thickness of 400nm.
Step 2d: the rate of evaporation method is
A 10nm Sprio-TTB layer is formed on a surface of the side of the second perovskite absorption layer facing away from the C60 layer.
Step 2e: and forming a 10nm ITO layer on the surface of one side of the Sprio-TTB layer, which is away from the perovskite absorption layer, by adopting magnetron sputtering.
Step three: preparation of the first solar cell
Step 3a: forming 10nm SnO on the surface of one side of the ITO layer, which is far away from the Sprio-TTB layer, by adopting atomic layer deposition equipment 2 A layer.
Step 3b: by using
Evaporation rate at the SnO 2 And evaporating a 10nm C60 layer on the surface of one side of the layer, which faces away from the ITO layer.
Step 3c: away from the SnO at the C60 layer 2 A first perovskite absorber layer is formed on one side surface of the layer.
The method comprises the following steps: using vacuum coating equipment to separate the C60 layer from the SnO 2 Evaporating 100-400nm lead iodide and lead chloride film on one side surface of the layer, and spin-coating organic solution (organic solution is prepared from MABr, MACl and FAI according to Cs 0.22 FA 0.78 MAPb(I 0.75 Br 0.25 ) 3 Preparing mixed solution according to the molar ratio of (2) of the material, spin coating is 1000-5000r/s for 30s, and after spin coating is finished, the material is annealed for 10-30min at 100-160 ℃ in a heat table, so that a first perovskite absorption layer with the thickness of 300nm and the band gap of 2.0eV is formed.
Step 3d: the rate of evaporation method is
A 10nm Sprio-TTB layer is formed on a surface of the first perovskite absorption layer on a side facing away from the C60 layer.
Step 3e: and forming a 10nm ITO layer (first transparent conductive layer) on the surface of one side of the Sprio-TTB layer, which is away from the first perovskite absorption layer, by adopting magnetron sputtering. And simultaneously forming a 10nm ITO layer (second transparent conductive layer) on the surface of one side of the p-type amorphous silicon back surface, which faces away from the second passivation layer.
Step 3f: and evaporating a 200nm silver grid line electrode on the first transparent conductive layer and the second transparent conductive layer by adopting a mask method, so as to obtain the solar cell, wherein various parameters of the solar cell are shown in table 1.
Example 2
Example 2 differs from example 1 in the method of manufacturing the first solar cell, specifically as follows:
step three: preparation method of first solar cell
Step 3a: forming 10nm SnO on the surface of one side of the ITO layer, which is far away from the Sprio-TTB layer, by adopting atomic layer deposition equipment 2 A layer.
Step 3b: by using
Evaporation rate at the SnO 2 And evaporating a 10nm C60 layer on the surface of one side of the layer, which faces away from the ITO layer.
Step 3c: facing away from the SnO at the C60 layer by MOCVD 2 A single-phase polycrystalline cuprous oxide film is grown on one side surface of the layer, and the thickness of the single-phase polycrystalline cuprous oxide film is 80nm.
Step 3d: the rate of evaporation method is
A 10nm Sprio-TTB layer is formed on a surface of the first perovskite absorption layer on a side facing away from the C60 layer.
Step 3e: and forming a 10nm ITO layer (first transparent conductive layer) on the surface of one side of the Sprio-TTB layer, which is away from the first perovskite absorption layer, by adopting magnetron sputtering. And simultaneously forming a 10nm ITO layer (second transparent conductive layer) on the surface of one side of the p-type amorphous silicon back surface, which faces away from the second passivation layer.
Step 3f: and evaporating a 200nm silver grid line electrode on the first transparent conductive layer and the second transparent conductive layer by adopting a mask method, so as to obtain the solar cell, wherein various parameters of the solar cell are shown in table 1.
Comparative example 1
Comparative example 1 differs from example 1 only in that there is no first solar cell, and each parameter of the solar cell in this embodiment is shown in table 1.
Table 1 shows the parameters of the examples and comparative examples
The small knot: as can be seen from table 1, by combining the band gaps of the sub-cells in the stacked cell, the sub-cells with more narrow band gap can absorb photons with lower energy, thereby expanding the spectral absorption range; the sub-cells with wider band gap can absorb photons with higher energy, so that photon energy can be effectively utilized, incident light is correspondingly absorbed by each sub-cell, high-efficiency utilization of solar spectrum within the whole band range is realized, and the efficiency of the laminated cell is improved.
Although described above in connection with the embodiments of the present application, the present application is not limited to the specific embodiments and fields of application described above, which are intended to be illustrative, instructive, and not limiting. Those skilled in the art, having the benefit of this disclosure, may make numerous forms, and equivalents thereof, without departing from the scope of the invention as defined by the claims.
Claims (12)
1. A three junction stacked solar cell comprising: the first solar cell, the second solar cell and the third solar cell are sequentially stacked, wherein the band gap of the first solar cell is a, the band gap of the second solar cell is b, the band gap of the third solar cell is c, a > b > c, the value range of a is 2.0ev-2.5ev, the value range of b is 1.4ev-1.7ev, and the value range of c is 1.1ev-1.5ev.
2. The three junction stacked solar cell according to claim 1, wherein the light absorbing layer of the first solar cell is selected from the group consisting of a cuprous oxide layer or a perovskite layer,
preferably, the perovskite layer is selected from one of a ternary perovskite layer, a tin-based perovskite layer or a lead tin perovskite layer.
3. The triple junction tandem solar cell of claim 1 wherein said light absorbing layer of said second solar cell is a ternary perovskite layer.
4. The three junction stacked solar cell of claim 1, wherein the light absorbing layer of the third solar cell is a silicon-based layer.
5. The three junction stacked solar cell of claim 1, wherein the first solar cell is a cuprous oxide solar cell or a perovskite solar cell;
preferably, the perovskite solar cell is selected from a ternary perovskite solar cell, a tin-based perovskite solar cell or a lead-tin perovskite solar cell.
6. The three junction stacked solar cell of claim 1, wherein the second solar cell is a perovskite solar cell.
7. The three-junction stacked solar cell according to claim 1, wherein,
the third solar cell is one of a silicon heterojunction cell, a TOPCON cell or a PERC cell.
8. The three-junction stacked solar cell of claim 1, wherein a first composite layer is stacked between the first solar cell and the second solar cell; and/or
A second composite layer is laminated between the second solar cell and the third solar cell.
9. The three-junction stacked solar cell of claim 1, wherein the first solar cell is a trans-structured cell; and/or
The second solar cell is a cell with a trans-structure.
10. The preparation method of the three-junction laminated solar cell is characterized by comprising the following steps of:
preparing a third solar cell;
preparing a second solar cell;
preparing a first solar cell;
the band gap of the first solar cell is a, the band gap of the second solar cell is b, the band gap of the third solar cell is c, a > b > c, the value range of a is 2.0ev-2.5ev, the value range of b is 1.4ev-1.7ev, and the value range of c is 1.1ev-1.5ev.
11. The method according to claim 10, wherein,
preparing a second composite layer on one side surface of the third solar cell;
preparing a second solar cell on the surface of one side of the second composite layer, which faces away from the third solar cell;
preparing a first composite layer on the surface of one side of the second solar cell, which is away from the second composite layer;
and preparing the first solar cell on the surface of one side of the first composite layer, which faces away from the second solar cell.
12. The method of manufacturing according to claim 10 or 11, wherein the solar cell manufactured by the method of manufacturing is the solar cell according to any one of claims 1 to 9.
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