CN116403886A - Two-dimensional material photoelectronic chip and preparation method thereof - Google Patents

Two-dimensional material photoelectronic chip and preparation method thereof Download PDF

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Publication number
CN116403886A
CN116403886A CN202310249566.7A CN202310249566A CN116403886A CN 116403886 A CN116403886 A CN 116403886A CN 202310249566 A CN202310249566 A CN 202310249566A CN 116403886 A CN116403886 A CN 116403886A
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film
dimensional material
ultrathin
sample
photoresist
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尹志军
范宁
崔国新
叶志霖
汤济
许启诚
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Nanjing Nanzhi Institute Of Advanced Optoelectronic Integration
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Nanjing Nanzhi Institute Of Advanced Optoelectronic Integration
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Abstract

The invention discloses a two-dimensional material photoelectronic chip and a preparation method thereof, wherein the preparation method comprises the following steps: obtaining a substrate wafer to be coated; sequentially preparing a metal film and a silicon nitride film on the surface of a substrate wafer; on the surface of a wafer provided with a metal plating film and a silicon nitride film, growing a two-dimensional material according to a preset chip pattern area; performing laser cutting on the two-dimensional material according to a preset shape; atomic layer deposition is carried out on the surface of the intermediate sample, and an ultrathin medium film is deposited on the surface of the two-dimensional material, so that the ultrathin medium film covers the surface of the intermediate sample; preparing a metal film electrode on the surface of the ultrathin medium film; and bonding the target sample with the printed circuit board to obtain the two-dimensional material photoelectronic chip. The method provided by the application adopts an Atomic Layer Deposition (ALD) technology to deposit the ultrathin dielectric film on the surface of the two-dimensional material, and the formed ultrathin dielectric film can protect the internal two-dimensional material and prevent the two-dimensional material from being damaged by a semiconductor processing technology.

Description

Two-dimensional material photoelectronic chip and preparation method thereof
Technical Field
The invention relates to the technical field of optical devices, in particular to a two-dimensional material photoelectronic chip and a preparation method thereof.
Background
Along with the development and progress of society, people put higher demands on the performance, miniaturization and power consumption of electronic products, but along with the continuous declining of the line width of a silicon-based chip manufacturing process, when the line width is lower than 10nm, the chip can generate adverse factors such as short channel effect, grid regulation and control, electric leakage and the like. However, the two-dimensional layered semiconductor material can avoid the influence factors, the structural thickness of the two-dimensional layered semiconductor material is atomic level, and the two-dimensional material has excellent electrical and optical effects due to the size and quantum effects, so that the prepared two-dimensional material photoelectron chip has great advantages in aspects of electron mobility, on-off ratio, photoelectric response and the like.
However, because of the specificity of the two-dimensional material, the development of the two-dimensional material is constrained by adverse factors such as high chip processing difficulty, high material cost and the like. The two-dimensional material photoelectronic chip uses complementary metal oxide semiconductor processing technology (CMOS technology), various physical bombardment and chemical reaction exist in the technology, and the two-dimensional material photoelectronic chip is easily affected by plasma bombardment, cleaning solvent impact, hexamethyldisilazane (HMDS) reaction and the like in chip processing, so that the two-dimensional material is broken, oxidized and the like to be irrecoverable.
Patent CN110042365a discloses an atomic layer deposition method for growing alumina on a two-dimensional material surface, comprising the steps of: stripping a single layer or multiple layers of two-dimensional material on a silicon oxide substrate; annealing the stripped two-dimensional material at a high temperature to remove surface adsorption; the exfoliated or directly grown two-dimensional material is placed into an atomic layer deposition system for a number of deposition cycles to grow a deposited atomic layer of alumina. According to the atomic layer deposition method for growing aluminum oxide on the surface of the two-dimensional material, the aluminum oxide can be deposited on the surface of the two-dimensional material through physical adsorption, so that impurities and defects are prevented from being introduced on the surface of the two-dimensional material, and the intrinsic characteristics of the two-dimensional material are maintained. However, the preparation method needs high-temperature annealing, the steps are complex, and the prepared two-dimensional material cannot meet the requirements of the application field of the silicon-based component with the characteristic dimension lower than 10 nm.
Therefore, a method capable of processing a two-dimensional material photoelectronic chip is found, so that the quality damage caused by a semiconductor processing technology can be avoided, and the method is a technical problem to be solved at present.
Disclosure of Invention
Based on the thought, the scheme of the application provides a two-dimensional material photoelectron chip and a preparation method thereof, an Atomic Layer Deposition (ALD) technology is adopted to deposit an ultrathin medium film on the surface of the two-dimensional material, and the formed ultrathin medium film protects the internal two-dimensional material and prevents the two-dimensional material from being damaged by a semiconductor processing technology.
In one aspect, the invention provides a method for preparing a two-dimensional material optoelectronic chip, comprising the following steps:
obtaining a substrate wafer to be coated;
sequentially preparing a metal film and a silicon nitride film on the surface of a substrate wafer to obtain a wafer with a metal coating film and a silicon nitride film;
growing a two-dimensional material on the surface of the wafer with the metal coating film and the silicon nitride film according to a preset chip pattern area;
performing laser cutting on the two-dimensional material according to a preset shape to obtain a first intermediate sample;
atomic layer deposition is carried out on the surface of the intermediate sample, and an ultrathin medium film is deposited on the surface of the two-dimensional material, so that the ultrathin medium film covers the surface of the first intermediate sample;
preparing a metal film electrode on the surface of the ultrathin medium film to obtain a target sample to be bonded;
and bonding the target sample with a printed circuit board to obtain the two-dimensional material photoelectronic chip.
Further, the preparing a metal film and a silicon nitride film on the surface of the substrate wafer in sequence includes:
carrying out metal coating on the surface of the substrate wafer by an electron beam evaporation method;
and preparing a silicon nitride film on the surface of the metal coating by a plasma enhanced chemical vapor deposition method.
Further, the two-dimensional material is grown by transferring a molybdenum disulfide film material onto a wafer provided with a metal coating and a silicon nitride film through a chemical vapor deposition method.
Further, the preparing a metal film electrode on the surface of the ultrathin dielectric film includes:
determining the photoetching shape of the photoresist according to a preset etching shape and the shape of the surface of the ultrathin medium film;
photoetching and developing are carried out on the surface of the ultrathin medium film to obtain a second intermediate sample;
preparing a metal coating film on the surface area of the second sample by using an electron beam evaporation method to obtain a third intermediate sample with the photoresist and the metal coating film; the surface area of the second intermediate sample comprises the surface area of the photoresist, and the surface area of the ultrathin medium film is not covered by the photoresist;
and removing the photoresist on the surface of the third intermediate sample and the metal coating film covered on the surface area of the photoresist to obtain the target sample to be bonded with the metal film electrode.
Further, the photoetching and developing are carried out on the surface of the ultrathin medium film to obtain a second intermediate sample, which comprises the following steps:
spin coating photoresist on the surface of the ultrathin medium film;
carrying out pretreatment on a sample by using a hot plate, and exposing an ultrathin medium film area on the sample by using a photoetching machine;
the photoresist in the ultrathin dielectric film region is developed using a developer containing tetramethylammonium hydroxide.
Further, the method for removing the photoresist on the surface of the third intermediate sample and the metal coating film covering the surface area of the photoresist is a stripping process.
Further, the bonding the target sample to a printed circuit board includes:
bonding the target sample to a printed circuit board;
and (3) interconnecting the metal film electrode on the target sample with the metal electrode on the printed circuit board by using gold wires in a wire bonding mode.
Further, the substrate wafer is made of one of a silicon substrate, lithium niobate, lithium tantalate, a silicon wafer, a silicon carbide wafer, silicon nitride, quartz, sapphire or quartz glass.
On the other hand, the application also provides a two-dimensional material photoelectronic chip which is prepared by the preparation method.
According to the invention, aiming at the problem that a two-dimensional material photoelectron chip is difficult to process, a Chemical Vapor Deposition (CVD) method is combined to grow the two-dimensional material in a chip pattern area, then an Atomic Layer Deposition (ALD) technology is adopted to deposit an ultrathin medium film on the surface of the two-dimensional material, and the formed ultrathin medium film can effectively protect the internal two-dimensional material, so that the two-dimensional material is not damaged by a semiconductor processing technology. Therefore, the yield of processing the two-dimensional material optoelectronic chip is greatly improved, the cost of a single piece of the two-dimensional material optoelectronic chip is reduced, and the two-dimensional material optoelectronic chip can meet the application requirement in the field of line width of 10 nm.
Drawings
The following is a brief description of what is expressed in the drawings of the specification:
FIG. 1 is a flow chart of a method for fabricating a two-dimensional material optoelectronic chip provided herein;
FIG. 2 is a schematic diagram of a method for preparing a first intermediate sample of a two-dimensional material optoelectronic chip according to an embodiment of the present disclosure;
FIG. 3 is a schematic diagram of a method for fabricating a two-dimensional optoelectronic chip according to an embodiment of the present disclosure;
fig. 4 is a schematic top view of a two-dimensional material optoelectronic chip according to an embodiment of the present disclosure.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
In order to solve the problem that the chip processing difficulty is high and the two-dimensional material photoelectron chip is difficult to process, the invention provides a method for depositing an ultrathin medium film on the surface of a two-dimensional material by adopting an Atomic Layer Deposition (ALD) technology, and the formed ultrathin medium film protects the internal two-dimensional material and prevents the two-dimensional material from being damaged by a semiconductor processing technology.
Firstly, the invention provides a preparation method of a two-dimensional material photoelectronic chip, as shown in fig. 1, comprising the following steps:
s1, obtaining a substrate wafer to be coated.
A substrate wafer with a coating film is prepared, wherein the material of the substrate wafer can be one of a silicon substrate, lithium niobate, lithium tantalate, a silicon wafer, a silicon carbide wafer, silicon nitride, quartz, sapphire or quartz glass.
S2, sequentially preparing a metal film and a silicon nitride film on the surface of the substrate wafer to obtain the wafer with the metal coating and the silicon nitride film.
Carrying out metal coating on the surface of the substrate wafer by an electron beam evaporation method;
and preparing a silicon nitride film on the surface of the metal coating by a plasma enhanced chemical vapor deposition method.
And S3, growing a two-dimensional material on the surface of the wafer with the metal coating and the silicon nitride film according to a preset chip pattern area.
The two-dimensional material is grown by transferring a molybdenum disulfide film material onto a wafer with a metal coating and a silicon nitride film through a chemical vapor deposition method.
S4, carrying out laser cutting on the two-dimensional material according to a preset shape to obtain a first intermediate sample;
s5, performing atomic layer deposition on the surface of the intermediate sample, and depositing an ultrathin medium film on the surface of the two-dimensional material to cover the ultrathin medium film on the surface of the first intermediate sample;
and S6, preparing a metal film electrode on the surface of the ultrathin medium film to obtain a target sample to be bonded.
Determining the photoetching shape of the photoresist according to a preset etching shape and the shape of the surface of the ultrathin medium film;
spin coating photoresist on the surface of the ultrathin medium film;
carrying out pretreatment on a sample by using a hot plate, and exposing an ultrathin medium film area on the sample by using a photoetching machine;
developing the photoresist in the ultrathin medium film area by using a developing solution containing tetramethyl ammonium hydroxide to obtain a second intermediate sample;
preparing a metal coating film on the surface area of the second sample by using an electron beam evaporation method to obtain a third intermediate sample with the photoresist and the metal coating film; the surface area of the second intermediate sample comprises the surface area of the photoresist, and the surface area of the ultrathin medium film is not covered by the photoresist;
and removing the photoresist on the surface of the third intermediate sample and the metal coating film covering the surface area of the photoresist by using a Lift-off process (Lift-off), so as to obtain a target sample to be bonded, wherein the target sample is provided with a metal film electrode.
And S7, bonding the target sample with a printed circuit board to obtain the two-dimensional material photoelectronic chip.
Bonding the target sample to a printed circuit board;
and (3) interconnecting the metal film electrode on the target sample with the metal electrode on the printed circuit board by using gold wires in a wire bonding mode.
In order to further explain the technical solutions in the present application, the following specific embodiments are further disclosed in the embodiments of the present application.
Example 1
This example provides a specific embodiment for preparing two-dimensional material optoelectronic chips, as shown in fig. 2 and 3.
The first step: the whole substrate wafer is cleaned by using an industrial standard wet cleaning process (RCA), then a thin film metal coating is carried out by using an Electron Beam Evaporation (EBE) mode, and then a SiN thin film is prepared on the surface of the thin film metal coating by using a Plasma Enhanced Chemical Vapor Deposition (PECVD) mode.
And a second step of: a two-dimensional material is grown on the chip pattern area using Chemical Vapor Deposition (CVD).
And a third step of: and cutting the grown two-dimensional material wafer by using a laser dicing saw, and dividing the two-dimensional material wafer into small chips. Because the two-dimensional material has excellent electrical and optical effects, the two-dimensional material photoelectronic chip is primarily formed.
Fourth step: in order to improve the processability of a two-dimensional material photoelectron chip, atomic Layer Deposition (ALD) is performed on the surface of the chip, an ultrathin dielectric film is deposited on the surface of the two-dimensional material by using the Atomic Layer Deposition (ALD), and the surface of the chip is covered with the ultrathin dielectric film. The dielectric film thus formed protects the internal two-dimensional material from damage and facilitates subsequent chip processing.
Fifth step: spin coating photoresist on the surface of a two-dimensional material photoelectronic chip, preprocessing the chip by using a hot plate, exposing a two-dimensional material area on the chip by using a photoetching machine, and developing the two-dimensional material photoelectronic chip by using a developing solution containing tetramethyl ammonium hydroxide (TMAH).
Sixth step: an Electron Beam Evaporation (EBE) was used to metallise the film.
Seventh step: the metal electrode was prepared using a Lift-off (Lift-off) process.
Eighth step: the two-dimensional material optoelectronic chip is bonded on a Printed Circuit Board (PCB) by using a bonding machine, and then a metal film electrode of the two-dimensional material optoelectronic chip is interconnected with a metal electrode on the Printed Circuit Board (PCB) in a wire bonding (WireBonding) mode by using a wire bonding machine, so that a two-dimensional material optoelectronic chip is formed, as shown in fig. 4.
It is apparent that the above examples are given by way of illustration only and are not limiting of the embodiments. Other variations or modifications of the above teachings will be apparent to those of ordinary skill in the art. It is not necessary here nor is it exhaustive of all embodiments. While still being apparent from variations or modifications that may be made by those skilled in the art are within the scope of the invention.

Claims (9)

1. The preparation method of the two-dimensional material photoelectronic chip is characterized by comprising the following steps of:
obtaining a substrate wafer to be coated;
sequentially preparing a metal film and a silicon nitride film on the surface of a substrate wafer to obtain a wafer with a metal coating film and a silicon nitride film;
growing a two-dimensional material on the surface of the wafer with the metal coating film and the silicon nitride film according to a preset chip pattern area;
performing laser cutting on the two-dimensional material according to a preset shape to obtain a first intermediate sample;
atomic layer deposition is carried out on the surface of the first intermediate sample, and an ultrathin medium film is deposited on the surface of the two-dimensional material, so that the ultrathin medium film covers the surface of the first intermediate sample;
preparing a metal film electrode on the surface of the ultrathin medium film to obtain a target sample to be bonded;
and bonding the target sample with a printed circuit board to obtain the two-dimensional material photoelectronic chip.
2. The method for preparing a two-dimensional material optoelectronic chip according to claim 1, wherein the sequentially preparing a metal film and a silicon nitride film on the surface of a substrate wafer comprises:
carrying out metal coating on the surface of the substrate wafer by an electron beam evaporation method;
and preparing a silicon nitride film on the surface of the metal coating by a plasma enhanced chemical vapor deposition method.
3. The method for preparing the two-dimensional material optoelectronic chip according to claim 1, wherein the two-dimensional material is grown by transferring a molybdenum disulfide film material onto a wafer with a metal coating film and a silicon nitride film by a chemical vapor deposition method.
4. The method for preparing a two-dimensional material optoelectronic chip according to claim 1, wherein the preparing a metal film electrode on the surface of the ultrathin dielectric film comprises:
determining the photoetching shape of the photoresist according to a preset etching shape and the shape of the surface of the ultrathin medium film;
photoetching and developing are carried out on the surface of the ultrathin medium film to obtain a second intermediate sample;
preparing a metal coating film on the surface area of the second sample by using an electron beam evaporation method to obtain a third intermediate sample with the photoresist and the metal coating film; the surface area of the second intermediate sample comprises the surface area of the photoresist, and the surface area of the ultrathin medium film is not covered by the photoresist;
and removing the photoresist on the surface of the third intermediate sample and the metal coating film covered on the surface area of the photoresist to obtain the target sample to be bonded with the metal film electrode.
5. The method for preparing a two-dimensional material optoelectronic chip according to claim 4, wherein the performing photolithography and development on the surface of the ultrathin dielectric film to obtain a second intermediate sample comprises:
spin coating photoresist on the surface of the ultrathin medium film;
carrying out pretreatment on a sample by using a hot plate, and exposing an ultrathin medium film area on the sample by using a photoetching machine;
the photoresist in the ultrathin dielectric film region is developed using a developer containing tetramethylammonium hydroxide.
6. The method of claim 4, wherein the method of removing the photoresist on the surface of the third intermediate sample and the metal coating film covering the surface area of the photoresist is a lift-off process.
7. The method of claim 1, wherein bonding the target sample to a printed circuit board comprises:
bonding the target sample to a printed circuit board;
and (3) interconnecting the metal film electrode on the target sample with the metal electrode on the printed circuit board by using gold wires in a wire bonding mode.
8. The method for manufacturing a two-dimensional material optoelectronic chip according to claim 1, wherein the substrate wafer is one of a silicon substrate, lithium niobate, lithium tantalate, a silicon wafer, a silicon carbide wafer, silicon nitride, quartz, sapphire, and quartz glass.
9. A two-dimensional material optoelectronic chip, characterized in that it is prepared by the preparation method of any one of claims 1 to 8.
CN202310249566.7A 2023-03-15 2023-03-15 Two-dimensional material photoelectronic chip and preparation method thereof Pending CN116403886A (en)

Priority Applications (1)

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Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
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Publications (1)

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CN116403886A true CN116403886A (en) 2023-07-07

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Country Link
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