CN116387084B - Quartz micro switch - Google Patents
Quartz micro switch Download PDFInfo
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- CN116387084B CN116387084B CN202310643365.5A CN202310643365A CN116387084B CN 116387084 B CN116387084 B CN 116387084B CN 202310643365 A CN202310643365 A CN 202310643365A CN 116387084 B CN116387084 B CN 116387084B
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 56
- 239000010453 quartz Substances 0.000 title claims abstract description 46
- 239000000758 substrate Substances 0.000 claims abstract description 102
- 239000005350 fused silica glass Substances 0.000 claims abstract description 10
- 230000009471 action Effects 0.000 claims abstract description 5
- 238000004891 communication Methods 0.000 claims description 4
- 230000005611 electricity Effects 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 9
- 238000012545 processing Methods 0.000 abstract description 6
- 238000005516 engineering process Methods 0.000 abstract description 5
- 230000008646 thermal stress Effects 0.000 abstract description 3
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 230000001133 acceleration Effects 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 3
- 239000011651 chromium Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000013016 damping Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H35/00—Switches operated by change of a physical condition
- H01H35/14—Switches operated by change of acceleration, e.g. by shock or vibration, inertia switch
- H01H35/141—Details
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/01—Switches
Abstract
The invention relates to the technical field of micro-electromechanical systems, and discloses a quartz micro-switch, which comprises a lower polar plate, a middle polar plate and an upper cover plate which are connected through bonding from bottom to top. The middle polar plate comprises a middle substrate and a middle electrode layer arranged on the lower surface of the middle substrate; the middle substrate comprises a middle frame, a mass block and a cantilever beam; the intermediate electrode layer includes a mass electrode layer disposed on a lower surface of the mass. The lower polar plate comprises a lower substrate and a second electrode layer arranged on the upper surface of the lower substrate; the second electrode layer comprises a conducting electrode layer, and the conducting electrode layer is arranged opposite to the mass block electrode layer. Wherein, the materials of the lower base plate, the upper cover plate and the middle base plate are all fused quartz; the mass is configured to move up and down within the quartz micro-switch under inertial action, and when the mass electrode layer is in contact with the conducting electrode layer, the first electrode layer and the second electrode layer are conducting. The switch has the advantages of small thermal stress, high reliability and simple processing technology.
Description
Technical Field
The invention relates to the technical field of micro-electromechanical systems, in particular to a quartz micro-switch.
Background
The inertial switch is a precise inertial device which takes a spring-mass-damping in a vibration system as a physical model, takes a solid mass block as a carrier to sense acceleration change in the external environment and performs on-off state of the switch in a mechanical contact mode. The inertial switch is a passive device, is not interfered by complex electromagnetic signals, and is widely applied to the fields of weapon equipment, aerospace, industry and the like.
The traditional inertial switch adopts a precision machining mode to process parts such as a working mass block, a shell, an electrode, a spring and the like, and then the parts are assembled, debugged and screened. The feature size of the parts is in the range of 0.1 mm-100 mm, and the whole machine volume is generally larger than 40000mm 3 . Is limited by more parts, complex assembly and adjustment, large volume and the like,making it difficult to play an important role in the development of modern equipment toward miniaturization, weight saving, and dexterity. With the rapid development of microelectromechanical (MEMS) technology, conventional inertial switches are increasingly being replaced by MEMS inertial switches that are small in size, light in weight, easy to integrate, have good processing consistency, are free of assembly, and find application in weaponry.
Currently, MEMS inertial switches are typically metal micro switches fabricated by metal micro-plating methods and silicon micro switches fabricated by silicon micro-processing methods. The metal micro-switch has complex preparation process, and stress mismatch caused by multi-layer metal stacking brings more uncertain factors for the consistency and reliability of the device; because of poor insulativity of silicon, an insulating layer needs to be manufactured on the surface of the silicon in the structure of the silicon micro switch, and the manufacturing process is complex.
Disclosure of Invention
The invention provides a quartz micro switch with simple processing technology and high reliability.
The invention provides a quartz micro switch which comprises a lower polar plate, a middle polar plate and an upper cover plate, wherein the lower polar plate, the middle polar plate and the upper cover plate are connected through bonding from bottom to top. The middle polar plate comprises a middle substrate and a middle electrode layer arranged on the lower surface of the middle substrate; the middle substrate comprises a middle frame, a mass block and a cantilever beam, wherein the mass block is arranged in an inner side through hole formed by the middle frame, one end of the cantilever beam is connected to the mass block, and the other end of the cantilever beam is connected to the middle frame; the middle electrode layer comprises an electrically conducted middle bonding electrode layer and a mass block electrode layer, the middle bonding electrode layer is arranged on the lower surface of the middle frame, and the mass block electrode layer is arranged on the lower surface of the mass block. The lower polar plate comprises a lower substrate, and a first electrode layer and a second electrode layer which are arranged on the upper surface of the lower substrate and are electrically isolated from each other; the first electrode layer comprises a lower bonding electrode layer, and the lower bonding electrode layer is arranged opposite to the middle bonding electrode layer and is in contact with the middle bonding electrode layer to conduct electricity; the second electrode layer comprises a conducting electrode layer, and the conducting electrode layer is arranged opposite to the mass block electrode layer. Wherein, the materials of the lower base plate, the upper cover plate and the middle base plate are all fused quartz; the mass is configured to move up and down within the quartz micro-switch under inertial action, and when the mass electrode layer is in contact with the conducting electrode layer, the first electrode layer and the second electrode layer are conducting.
In some embodiments, the upper surface of the lower substrate is provided with a first recess in the middle of the lower substrate, the lower surface of the upper cover plate is provided with a second recess in the middle of the upper cover plate, the first recess and the second recess are suitable for accommodating the mass block, and the conductive electrode layer is arranged in the first recess. Further, the thickness of the middle frame is consistent with the thickness of the mass block, and the thickness of the cantilever beam is smaller than the thickness of the mass block. Preferably, the center planes of the cantilever beam, the middle frame and the mass block in the thickness direction coincide.
In some embodiments, the first electrode layer further comprises a first lead electrode layer, one end of the first lead electrode layer is connected to the lower bonding electrode layer, and the other end of the first lead electrode layer extends to the outer side of the middle frame; the second electrode layer further comprises a second lead electrode layer, one end of the second lead electrode layer is connected to the conducting electrode layer, and the other end of the second lead electrode layer extends to the outer side of the middle frame. Further, the lower substrate further comprises a lead extension part for supporting the first lead electrode layer and the second lead electrode layer, and the lead extension part protrudes out of the middle substrate. Further, a lead recess is arranged on the upper surface of the lower substrate, and the lead recess is communicated with the first recess and extends to the lead extension part; the second lead electrode layer extends along a wall of the lead recess.
Optionally, the cantilever beam is a single straight arm cantilever beam, and the mass, the mass electrode layer, and the conductive electrode layer are all configured in a circular shape.
The invention has the characteristics and advantages that:
the quartz micro switch provided by the invention comprises a lower substrate, a middle substrate, an upper cover plate, a middle electrode layer, a first electrode layer and a second electrode layer, wherein the lower substrate is made of fused quartz materials, the middle electrode layer is arranged on the lower surface of the middle substrate, and the first electrode layer and the second electrode layer are arranged on the upper surface of the lower substrate. The middle electrode layer is electrically connected with the first electrode layer, the mass block electrode layer of the middle electrode layer is arranged on the lower surface of the mass block of the middle substrate, and the conducting electrode layer of the second electrode layer is arranged in the middle of the lower substrate. The mass block and the cantilever beam arranged on the middle substrate form a spring-mass structure, and the mass block moves downwards under the action of inertial acceleration. When the mass electrode layer is in contact with the conducting electrode layer, the quartz micro switch is conducted. The materials of the three substrates (the lower substrate, the middle substrate and the upper cover plate) are consistent, so that the quartz micro switch has small thermal stress, high device stability and good process compatibility; in addition, the three substrate materials are all fused quartz, so that the quartz micro-switch has the characteristics of low thermal expansion coefficient, no carrier effect and good radiation resistance, and the reliability of the quartz micro-switch is high. The electrode layers are arranged on the lower surface of the middle substrate and the upper surface of the lower substrate to realize electric conduction, the electrode arrangement mode has a simple structure, the electrode layers can be manufactured in a sputtering mode, the processing technology is simple, and the realization is convenient.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for the description of the embodiments will be briefly described below, and it is apparent that the drawings in the following description are only some embodiments of the present invention, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic cross-sectional view of a quartz micro-switch provided by the present invention;
FIG. 2A is a schematic diagram of an intermediate substrate of a quartz micro-switch;
FIG. 2B is a schematic cross-sectional view taken in the direction A-A of FIG. 2A;
FIG. 3 is a schematic view of a lower substrate of a quartz micro-switch;
FIG. 4 is a schematic view of an upper cover plate of a quartz micro-switch;
FIG. 5 is a schematic view of an intermediate electrode layer disposed on an intermediate substrate;
FIG. 6 is a schematic view of a first electrode layer and a second electrode layer disposed on a lower substrate;
fig. 7 is a schematic cross-sectional view of the quartz micro-switch in the closed state.
Reference numerals illustrate:
100-quartz micro-switch, 101-space;
10-lower substrate, 11-first recess, 12-lower substrate bonding region, 13-lead recess, 14-lead extension;
20-middle base plate, 21-middle frame, 22-through hole, 23-mass block and 24-cantilever beam;
30-upper cover plate, 31-second recess, 32-upper cover plate bonding zone;
40-middle electrode layer, 41-mass electrode layer, 42-middle bonding electrode layer, 43-beam electrode layer;
50-first electrode layer, 51-lower bonding electrode layer, 52-first lead electrode layer;
60-second electrode layer, 61-conducting electrode layer, 62-second lead electrode layer.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The invention provides a quartz micro switch 100, which belongs to an MEMS inertial switch and can be applied to the fields of weapon equipment, aerospace, industry and the like. The quartz micro-switch 100 comprises a lower polar plate, a middle polar plate and an upper cover plate, which are connected by bonding from bottom to top. The lower polar plate comprises a lower substrate and an electrode layer arranged on the upper surface of the lower substrate, and the middle polar plate comprises a middle substrate and an electrode layer arranged on the lower surface of the middle substrate. Specifically, the lower substrate, the middle substrate and the upper cover plate are all made of fused quartz; the middle substrate is provided with a mass block, and the mass block is provided with a mass block electrode layer; the lower substrate is provided with a first electrode layer and a second electrode layer which are mutually independent. When the mass electrode layer is not contacted with the first electrode layer, the first electrode layer and the second electrode layer are kept disconnected; when the mass electrode layer is in contact with the first electrode layer, the first electrode layer and the second electrode layer conduct.
Referring to fig. 1 to 6, the quartz micro-switch 100 includes a lower substrate 10, an intermediate substrate 20 and an upper cover plate 30, all of which are made of fused quartz, and the intermediate substrate 20 is disposed between the lower substrate 10 and the upper cover plate 30. The middle substrate 20 comprises a middle frame 21, a mass block 23 and a cantilever beam 24; the mass 23 is disposed in an inner through hole 22 formed in the middle frame 21, that is, the mass 23 is surrounded by the middle frame 21 and separated from the middle frame 21; one end of the cantilever beam 24 is connected to the mass 23 and the other end of the cantilever beam 24 is connected to the intermediate frame 21, i.e. the mass 23 is connected to the intermediate frame 21 by the cantilever beam 24. The inner wall of the intermediate frame 21 defines a space 101 together with the upper surface of the lower substrate 10 and the lower surface of the upper cover plate 30, and the mass 23 is accommodated in the space 101 and supported by the cantilever beam 24. The cantilever beam 24 and the mass 23 form a "spring-mass" structure, and the mass 23 can move up and down in the space 101 under the action of inertial acceleration.
Referring to fig. 2A and 2B, in some embodiments, the intermediate substrate 20 is configured in a flat plate shape, and the through-hole 22 and the mass 23 formed by the intermediate frame 21 may be configured in any suitable shape, such as a regular or irregular shape of a circle, an ellipse, a square, etc., as long as the mass 23 is suitably received in the through-hole 22 and can move up and down with respect to the intermediate frame 21. In the embodiment shown in fig. 2A, the through holes 22 are in particular square, and the outer contour of the intermediate rim 21 is configured as a square distributed concentrically with the through holes 22. The mass 23 is in particular circular and is arranged in the centre of the through hole 22. The cantilever beam 24 may be configured as a cantilever straight beam, a folded beam, a spiral beam, etc., without limitation in form. In number, a single or multiple cantilever beams 24 may be provided for supporting the mass 23. Referring to fig. 2A, the cantilever beam 24 is embodied as a single cantilever straight beam. In some embodiments, the center planes of the center frame 21, the cantilever beam 24, and the mass 23 in the thickness direction coincide (i.e., the longitudinal center planes coincide). That is, the longitudinal center plane of the intermediate frame 21 is also the longitudinal center plane of the cantilever beam 24 and the mass 23. In some embodiments, the lower surface of the mass 23 may be lower than or protrude from the lower surface of the middle frame 21, as desired. The same is true of the upper surface of the mass 23. In some embodiments, the thickness of the intermediate rim 21, mass 23, and cantilever beam 24 are uniform for ease of processing. In other embodiments, the thickness of cantilever beam 24 is less than the thickness of mass 23 in order to effectively increase the sensitivity of quartz micro-switch 100. Preferably, the thickness of the intermediate frame 21 is identical to the thickness of the mass 23, and the thickness of the cantilever beam 24 is smaller than the thickness of the mass 23.
Referring to fig. 1, 3 and 4, each of the lower substrate 10 and the upper cover plate 30 is constructed in a flat plate shape, the lower substrate 10 has a lower substrate bonding region 12, and the upper cover plate 30 has an upper cover plate bonding region 32, wherein the lower substrate bonding region 12, the upper cover plate bonding region 32 are disposed opposite to the middle frame 21 of the middle substrate 20, respectively. In some embodiments, a first recess 11 is provided in the middle of the upper surface of the lower substrate 10, which forms a lower substrate bonding region 12 around a portion of the lower substrate 10 of the first recess 11. In some embodiments, a second recess 31 is provided in the middle of the lower surface of the upper cover 30, which forms an upper cover bonding region 32 around a portion of the upper cover 30 of the second recess 31. The first recess 11, the second recess 31, and the inner wall of the intermediate frame 21 together define a space 101, and the mass 23 is movable up and down in the space 101. It is to be added that the first recess 11 or the second recess 31 is not necessary. For example, in some embodiments, the thickness of the mass 23 is smaller than the thickness of the middle frame 21, where a gap exists between the lower surface of the mass 23 and the upper surface of the corresponding portion of the lower substrate 10, and a gap exists between the upper surface of the mass 23 and the lower surface of the corresponding portion of the upper cover 30, and these gaps may provide space for the mass 23 to move up and down.
The quartz micro switch 100 includes an intermediate electrode layer 40 disposed on the lower surface of the intermediate substrate 20, and a first electrode layer 50 and a second electrode layer 60 disposed on the upper surface of the lower substrate 10 and electrically isolated from each other, i.e., the first electrode layer 50 and the second electrode layer 60 are disposed independently of each other. Optionally, in some embodiments, the middle electrode layer 40 is disposed only on the lower surface of the mass 23, and in other embodiments, the middle electrode layer 40 is disposed not only on the lower surface of the mass 23, but also on the lower surfaces of the middle frame 21 and the cantilever beam 24. The intermediate electrode layer 40 includes a mass electrode layer 41, and the mass electrode layer 41 is disposed on the lower surface of the mass 23. In some embodiments, at least a portion of the first electrode layer 50 and the second electrode layer 60 are disposed opposite the mass electrode layer 41, such that the mass 23 moves downward to bring the mass electrode layer 41 into contact with both the first electrode layer 50 and the second electrode layer 60, and the first electrode layer 50 and the second electrode layer 60 are electrically connected through the mass electrode layer 41. In other embodiments, only the second electrode layer 60 is disposed opposite the mass electrode layer 41, and when the mass electrode layer 41 is not in contact with the second electrode layer 60, the intermediate electrode layer 40 remains in electrical communication with the first electrode layer 50, and when the mass 23 moves downward, the mass electrode layer 41 is in contact with the second electrode layer 60, and the first electrode layer 50 and the second electrode layer 60 are in electrical communication through the mass electrode layer 41.
Specifically, in some embodiments, referring to fig. 1 and 5, the middle electrode layer 40 includes an electrically conductive mass electrode layer 41 and a middle bonding electrode layer 42, and the middle bonding electrode layer 42 is disposed on a lower surface of the middle frame 21. The middle electrode layer 40 further includes a beam electrode layer 43 disposed on the lower surface of the cantilever beam 24, one end of the beam electrode layer 43 is connected to the mass electrode layer 41, and the other end is connected to the middle bonding electrode layer 42, and the mass electrode layer 41 and the middle bonding electrode layer 42 are electrically connected through the beam electrode layer 43. The shape of the intermediate electrode layer 40 may be configured in the shape of the lower surface of the intermediate substrate 20. For example, the middle bonding electrode layer 42 may be configured in a pattern similar to the shape of the lower surface of the middle frame 21, such as a closed square frame; the mass electrode layer 41 conforms to or resembles the shape of the lower surface of the mass 23, such as a circle. In some embodiments, beam electrode layer 43 may be narrower than cantilever beam 24, as shown in fig. 5. It should be appreciated that in some embodiments, the middle bonding electrode layer 42 may be a non-enclosed frame.
Specifically, in some embodiments, referring to fig. 1 and 5, the first electrode layer 50 includes a lower bonding electrode layer 51, and the lower bonding electrode layer 51 is disposed on a portion of the upper surface of the lower substrate 10 near the outer periphery (i.e., the lower substrate bonding region 12) and is at least partially in contact with the middle bonding electrode layer 42. For example, the lower bonding electrode layer 51 is disposed at least partially opposite the middle bonding electrode layer 42. After the quartz micro-switch 100 is assembled, the lower bonding electrode layer 51 is in contact with the middle bonding electrode layer 42, so that the first electrode layer 50 is electrically connected with the middle electrode layer 40. Referring to fig. 6, the lower bonding electrode layer 51 is configured as a square frame having an opening located on a side near the cantilever beam 24. Providing the opening may provide an arrangement space for the second electrode layer 60 (e.g., the second lead electrode layer 62). The opening may be disposed on any one of the square frames, and the position where the opening is disposed corresponds to the position where the second lead electrode layer 62 is disposed. The second electrode layer 60 includes a conductive electrode layer 61, and the conductive electrode layer 61 is disposed opposite to the mass electrode layer 41. Specifically, with continued reference to fig. 6, in some embodiments, the via electrode layer 61 is configured to be generally circular, disposed opposite the circular mass electrode layer 41. The mass 23 is configured to be movable up and down in the space 101 by inertia. When the mass electrode layer 41 is in contact with the conductive electrode layer 61, the first electrode layer 50 and the second electrode layer 60 are conductive; when the mass electrode layer 41 is separated from the conductive electrode layer 61, the first electrode layer 50 and the second electrode layer 60 remain disconnected.
In some embodiments, with continued reference to fig. 6, to facilitate connection of the quartz micro-switch 100 to external circuitry, the first electrode layer 50 further includes a first lead electrode layer 52 having one end connected to the lower bonding electrode layer 51 and the other end extending outwardly to the outside of the middle bezel 21. The second electrode layer 60 further includes a second lead electrode layer 62 having one end connected to the via electrode layer 61 and the other end extending outward to the outside of the middle frame 21. The ends of the first and second lead electrode layers 52 and 62 located outside the middle frame 21 are respectively formed with pads that facilitate connection with external circuits.
In some embodiments, referring to fig. 3 and 6, the lower substrate 10 is further provided with a lead extension 14 for supporting the first and second lead electrode layers 52 and 62, and the lead extension 14 extends outwardly from one side of the lower substrate bonding region 12, or the lead extension 14 is a portion of the lower substrate 10 protruding from the intermediate substrate 20. With continued reference to fig. 3 and 6, in some embodiments, the upper surface of the lower substrate 10 is also provided with a lead recess 13, the lead recess 13 being in communication with the first recess 11 and extending to a lead extension 14. The second lead electrode layer 62 extends along the wall of the lead recess 13 such that the second lead electrode layer 62 and the intermediate electrode layer 40 (e.g., the middle bonding electrode layer 42) have a gap in the height direction, avoiding contact conduction between the two. In another embodiment, the lower substrate 10 is not provided with the lead recess 13, and the second lead electrode layer 62 may be spatially staggered with the middle bonding electrode layer 42 or an insulating material or the like may be added therebetween such that the second lead electrode layer 62 is not in contact with the middle bonding electrode layer 42.
Referring to fig. 7, the mass 23 of the quartz micro-switch 100 moves toward the first recess 11 of the lower substrate 10 under the inertial acceleration. When the overload value reaches the closing threshold, the mass electrode layer 41 positioned on the lower surface of the mass 23 contacts the conductive electrode layer 61 positioned on the upper surface of the lower substrate 10, and the quartz micro-switch 100 is turned on.
In some embodiments, the aspect ratio of the gap between the mass 23 and the intermediate frame 21 is greater than 20:1, such as 22:1;24:1, etc. Not only can the material used for manufacturing the fused quartz substrate of the intermediate substrate 20 be saved and the cost can be saved, but also the volume of the whole quartz micro switch can be greatly reduced.
A metal layer (i.e., the intermediate electrode layer 40) is sputtered on the lower surface of the intermediate substrate 20 to form a middle plate. Specifically, metal layers are sputtered on the mass 23, the intermediate frame 21, and the cantilever beam 24, and an electrically conductive mass electrode layer 41, an intermediate bonding electrode layer 42, and a beam electrode layer 43 are formed correspondingly. In some embodiments, the sputtered metal layer is specifically chromium (Cr) and gold (Au) sputtered sequentially to a thickness of 200 a Ǻ a and 2000 a Ǻ a, respectively.
A metal layer (e.g., the first electrode layer 50, the second electrode layer 60) is sputtered on the upper surface of the lower substrate 10, thereby forming a lower plate. Specifically, metal layers are sputtered on the upper surfaces of the lower substrate bonding region 12 and the lead extension 14 to form an electrically conductive lower bonding electrode layer 51 and a first lead electrode layer 52, respectively. A metal layer is sputtered on the upper surfaces of the first recess 11, the lead recess 13, and the lead extension 14 to form an electrically conductive via electrode layer 61 and a second lead electrode layer 62, respectively.
The lower electrode plate, the middle electrode plate and the upper cover plate 30 are sequentially bonded and assembled to form the quartz micro switch 100. In some embodiments, the mass 23 is located in the middle of the quartz micro-switch 100 in the height direction.
The quartz micro switch 100 provided by the invention comprises a lower substrate 10, an intermediate substrate 20 and an upper cover plate 30 which are made of fused quartz materials, an intermediate electrode layer 40 arranged on the lower surface of the intermediate substrate 20, and a first electrode layer 50 and a second electrode layer 60 arranged on the upper surface of the lower substrate 10. The intermediate electrode layer 40 is electrically connected to the first electrode layer 50, the mass electrode layer 41 of the intermediate electrode layer 40 is provided on the lower surface of the mass 23 of the intermediate substrate 20, and the conductive electrode layer 61 of the second electrode layer 60 is provided in the middle (first recess 11) of the lower substrate 10. The mass 23 and the cantilever beam 24 provided on the intermediate substrate 20 constitute a "spring-mass" structure, and the mass 23 moves toward the first recess 11 of the lower substrate 10 under the inertial acceleration. When the mass electrode layer 41 is in contact with the conductive electrode layer 61, the quartz micro-switch 100 is turned on. The materials of the three substrates (the lower substrate 10, the middle substrate 20 and the upper cover plate 30) are consistent, so that the quartz micro switch 100 has small thermal stress, high device stability and good process compatibility; in addition, the three substrate materials are all fused quartz, so that the quartz micro switch 100 has the characteristics of low thermal expansion coefficient, no carrier effect and good radiation resistance, and the reliability of the quartz micro switch is high. The electrode layers are arranged on the lower surface of the middle substrate 20 and the upper surface of the lower substrate 10 to realize electric conduction, the electrode arrangement structure is simple, the electrode layers can be manufactured in a sputtering mode, the processing technology is simple, and the realization is convenient.
The foregoing is merely a few embodiments of the present invention and those skilled in the art may make various modifications or alterations to the embodiments of the present invention without departing from the spirit and scope of the invention in light of the present invention.
Claims (9)
1. A quartz micro switch is characterized by comprising a lower polar plate, a middle polar plate and an upper cover plate, wherein the lower polar plate, the middle polar plate and the upper cover plate are connected by bonding from bottom to top,
the middle polar plate comprises a middle substrate and a middle electrode layer arranged on the lower surface of the middle substrate; the middle substrate comprises a middle frame, a mass block and a cantilever beam, wherein the mass block is arranged in an inner side through hole formed by the middle frame, one end of the cantilever beam is connected to the mass block, and the other end of the cantilever beam is connected to the middle frame; the middle electrode layer comprises an electrically conducted middle bonding electrode layer and a mass block electrode layer, the middle bonding electrode layer is arranged on the lower surface of the middle frame, and the mass block electrode layer is arranged on the lower surface of the mass block;
the lower polar plate comprises a lower substrate, and a first electrode layer and a second electrode layer which are arranged on the upper surface of the lower substrate and are electrically isolated from each other; the first electrode layer comprises a lower bonding electrode layer which is arranged opposite to the middle bonding electrode layer and is in contact with the middle bonding electrode layer to conduct electricity; the second electrode layer comprises a conducting electrode layer, and the conducting electrode layer is arranged opposite to the mass block electrode layer;
wherein the lower substrate, the upper cover plate and the middle substrate are all made of fused quartz; the mass is configured to move up and down within the quartz micro-switch under inertial action, and the first electrode layer and the second electrode layer are turned on when the mass electrode layer is in contact with the turn-on electrode layer.
2. The quartz micro-switch of claim 1, wherein the upper surface of the lower substrate is provided with a first recess in the middle thereof, the lower surface of the upper cover plate is provided with a second recess in the middle thereof, the first recess and the second recess are adapted to accommodate the mass, and the conductive electrode layer is disposed in the first recess.
3. The quartz micro-switch of claim 2, wherein the thickness of the intermediate rim is consistent with the thickness of the mass, and the thickness of the cantilever beam is less than the thickness of the mass.
4. The quartz micro-switch of claim 3, wherein center planes of the cantilever beam, the middle frame, and the mass in a thickness direction coincide.
5. The quartz micro-switch of claim 4, wherein the first electrode layer further comprises a first lead electrode layer, one end of the first lead electrode layer is connected to the lower bonding electrode layer, and the other end of the first lead electrode layer extends to the outside of the middle frame; the second electrode layer further comprises a second lead electrode layer, one end of the second lead electrode layer is connected to the conducting electrode layer, and the other end of the second lead electrode layer extends to the outer side of the middle frame.
6. The quartz micro-switch of claim 5, wherein the lower substrate further comprises a lead extension for supporting the first and second lead electrode layers, the lead extension protruding from the intermediate substrate.
7. The quartz micro-switch of claim 6, wherein a lead recess is provided on an upper surface of the lower substrate, the lead recess being in communication with the first recess and extending to the lead extension; the second lead electrode layer extends along a wall of the lead recess.
8. The quartz micro-switch of any of claims 1-7, wherein the cantilever beam is a single straight arm cantilever beam, and the mass, the mass electrode layer, and the via electrode layer are each configured in a circular shape.
9. The quartz micro-switch of any of claims 1-7, wherein an aspect ratio of a gap between the mass and the intermediate rim is greater than 20:1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
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| CN116387084A (en) | 2023-07-04 |
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