CN116376408B - Consistent high molecular organic polymer chain oriented film and preparation method of transistor based on film - Google Patents

Consistent high molecular organic polymer chain oriented film and preparation method of transistor based on film Download PDF

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CN116376408B
CN116376408B CN202310088394.XA CN202310088394A CN116376408B CN 116376408 B CN116376408 B CN 116376408B CN 202310088394 A CN202310088394 A CN 202310088394A CN 116376408 B CN116376408 B CN 116376408B
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silicon wafer
film
high molecular
polymer chain
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CN116376408A (en
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孙华斌
丁佳瀚
许智奇
吴洁
陈子龙
于志浩
徐勇
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Nanjing University of Posts and Telecommunications
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D165/00—Coating compositions based on macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain; Coating compositions based on derivatives of such polymers
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    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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    • C09D133/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Coating compositions based on derivatives of such polymers
    • C09D133/04—Homopolymers or copolymers of esters
    • C09D133/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, the oxygen atom being present only as part of the carboxyl radical
    • C09D133/10—Homopolymers or copolymers of methacrylic acid esters
    • C09D133/12—Homopolymers or copolymers of methyl methacrylate
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
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    • Y02E10/549—Organic PV cells

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Abstract

The invention discloses a consistent high molecular organic polymer chain oriented film and a preparation method of a transistor based on the film, which relate to the field of semiconductor device physics. The consistent high molecular oriented film effectively improves the mobility of the organic field effect transistor, and reduces the subthreshold swing. Meanwhile, the mobility convergence of the organic field effect transistor is greatly improved by adopting the protection method of the consistent high molecular organic polymer chain, and the performance consistency of the transistor is more obvious.

Description

Consistent high molecular organic polymer chain oriented film and preparation method of transistor based on film
Technical Field
The invention relates to the field of semiconductor device physics, in particular to a consistent high molecular organic polymer chain oriented film and a preparation method of a transistor based on the film.
Background
An organic field effect transistor is a field effect transistor having an organic semiconductor material as a semiconductor layer. Since the end of the 20 th century organic semiconductor material was used as an active layer material for organic field effect transistors, the problem of lower carrier mobility has been faced. This is due to the fact that organic molecules are connected to each other by van der Waals forces, the band gap is wide, and carrier transport is affected by complex surface states and disorder, and a high barrier height. Research into organic semiconductor layers has been a major concern for improving carrier mobility.
With continuous research on organic field effect transistors, it can be found that the direction of the polymer chains and the length of the polymer chains may affect the electrical properties of the organic field effect transistors. The preparation of a uniform polymer orientation film similar to an inorganic alignment may have a positive effect on improving the performance of an organic field effect transistor. The Langmuir-Blodgett process prepares an organic semiconductor layer with a certain direction by preparing the organic semiconductor layer on the device in a consistent direction by means of pulling. This allows it to form an organic thin film resembling the crystalline order of inorganic semiconductors to some extent. The mobility of the organic semiconductor device during operation is improved. However, after a series of subsequent operations such as thermal annealing, the organic polymer chains are broken by the connection of van der Waals forces due to the high temperature, etc., so that the uniformity thereof is lowered.
The invention patent CN114300616A provides an integrated power device based on a copolymer organic semiconductor, which is prepared by adopting a solution spin coating and annealing method. However, this method does not solve the problem of alignment of the polymer orientation of the thin film during annealing.
Therefore, how to prepare a film with consistent polymer orientation, and provide a method for protecting a film with consistent polymer orientation prepared by Langmuir-Blodgett process, is a problem to be solved in the art.
Disclosure of Invention
In view of the above, the invention provides a method for preparing and protecting an organic consistent polymer oriented film, which realizes the preparation of an organic consistent polymer oriented film device, and provides a protection mode for the prepared organic film oriented arrangement polymer chains, so that the arrangement of the organic polymer chains can be prevented from being disturbed to a certain extent in a high-temperature annealing environment. Fills the blank that the organic semiconductor polymer chains in the industry are irregular and the arrangement mode of the organic polymer chains can not be effectively protected.
In order to achieve the above purpose, the present invention adopts the following scheme:
preparing a solution:
a DPPT-TT sample with a corresponding proportion is taken by a cleaned medicine spoon, PMMA sample powder with a certain proportion is taken again, the PMMA sample powder is placed in a clean glass bottle, and a solvent DCB with a corresponding proportion is injected into the glass bottle in a nitrogen environment. The concentration ratio is 5mg/2mg/1ml for example. The solution was heated and dissolved on a heating table at 80 ℃ for 24 hours to prepare an organic semiconductor solution for use.
Preparation before pulling and coating:
And taking out the silicon wafer with the SiO 2, and cutting the silicon wafer to a square shape with the size of a bottle opening. Cleaning a silicon wafer, placing the silicon wafer in a beaker filled with absolute ethyl alcohol and deionized water for ultrasonic cleaning, carrying out ultrasonic cleaning on the absolute ethyl alcohol for 20min, carrying out ultrasonic cleaning on the deionized water for 20min, taking out the silicon wafer, drying the silicon wafer by nitrogen, placing the silicon wafer on a heating table at 100 ℃ for heating for 30min, drying the silicon wafer, treating the silicon wafer by using plasma for 300s, and finally cleaning the silicon wafer by using UV ozone for 30min.
Cleaning tweezers for clamping silicon chips, placing the tweezers in a beaker with absolute ethyl alcohol and deionized water for cleaning, ultrasonically cleaning the tweezers with the absolute ethyl alcohol for 20min, ultrasonically cleaning the tweezers with the deionized water for 20min, ultrasonically cleaning the tweezers with the absolute ethyl alcohol for 20min, drying the tweezers by a nitrogen gun, and heating the tweezers on a heating table at 80 ℃ for 30min to dry the tweezers. Binding the upper end of the forceps with the epithelial tendon for standby.
Taking out the prepared solution for standby, and carrying out parameter setting on a lifting instrument, wherein the dipping speed is set to be 12mm/min, the lifting speed is set to be 12mm/min, the dipping time is 100s, the lifting interval is 300s, the dipping height is consistent with the liquid level, and the lifting height is consistent with the sum of the liquid level and the silicon wafer width. The dipping height is determined by the height of the preparation solution and is generally 25mm. The height of the pulling is determined according to the size of the cut silicon wafer, and is generally 43mm.
And (3) a lifting and film plating process:
The cleaned silicon wafer is clamped by tweezers, the cleaned silicon wafer is fixed by rubber bands prepared in advance, the tweezers are arranged in a clamp of a lifting instrument, a solution bottle opening is aligned to the lifting direction of the silicon wafer, the lifting and coating of the silicon wafer are started by a starting instrument, and the film thickness of an organic semiconductor layer can be increased by multiple lifting, so that the expected film thickness of a device is prepared.
And rapidly transferring the pulled-up wafer to a heating table for pre-annealing, wherein the heating table is set at 80 ℃ and the annealing time is 5min, and then transferring the pre-annealed wafer to a glove box nitrogen environment for continuous annealing, wherein the annealing temperature is 150 ℃ and the annealing time is 60min. And taking the sheet off after the annealing is finished, and cooling for standby.
Preparing a source electrode and a drain electrode:
The method comprises the steps of placing a silicon wafer with a film prepared on an object stage of an evaporation instrument, washing and drying a mask plate by absolute ethyl alcohol and deionized water, covering the mask plate on the surface of a semiconductor film, fixing the mask plate by utilizing magnetic force, placing the mask plate on a bracket of the evaporation instrument, closing a cabin door, pumping vacuum to 5E-4Pa, slowly adjusting a knob to perform power adjustment, slowly rotating a sample, evaporating a source drain electrode at a speed of 0.2A/s, and closing a sample baffle when the evaporating thickness is 50 nm. And slowly reducing the power to finish evaporation.
Device separation:
And separating a plurality of independent organic devices prepared on one silicon wafer by using tweezers, and dividing organic semiconductor layers among the devices to enable the devices to be in independent working states, so that the preparation of the polymer oriented thin film transistor is completed.
In general, compared with devices prepared by the existing spin coating process, the organic active layer polymer chains have a certain ordered arrangement, and the addition of PMMA is helpful for protecting the ordered arrangement of the polymer chains, so that the ordered arrangement of the polymer chains of the organic semiconductor layer is not easily damaged under the conditions of high temperature and the like, and the parallel arrangement of the polymer chains relative to the channel direction between the source and the drain is beneficial for improving a series of electrical properties such as carrier mobility of the organic transistor.
According to the invention, the organic transistor film is prepared by changing the film forming method of the organic active layer and utilizing the Langmuir-Blodgett process, so that the influence of anisotropy of the organic active layer is reduced, and the carrier mobility of the organic field effect transistor is improved.
The invention also provides a protection method for the prepared consistent high molecular orientation film, and changes the mode of connecting organic polymer chains by virtue of Van der Waals force by adding low-concentration PMMA, so that the ordering is more stable, and the consistency of the polymer chains can be effectively maintained in high temperature and other environments. Realizes the preparation and protection of the consistent high molecular oriented film.
Drawings
FIG. 1 is a Raman spectrum of an organic consistent polymer oriented film prepared by pulling after annealing at 80 ℃ and 150 ℃.
FIG. 2 is a graph of Raman spectra of unprotected and protected organic semiconductor films before and after annealing at 80℃and 150 ℃.
Fig. 3 is an IV performance curve of an organic thin film transistor prepared by forming organic semiconductor thin films in different directions.
Fig. 4 is a graph showing mobility bins of devices fabricated in different directions with a channel length of 300 μm, measured before and after PMMA doping protection.
Fig. 5 is a schematic diagram of a thin film transistor with uniform polymer orientation.
Wherein 1 is an electrode, 2 is an organic layer, 3 is a dielectric layer, and 4 is a gate electrode.
Detailed Description
The invention is described in further detail below in connection with the following detailed description: the protection method of the organic polymer chains of the consistent high molecular oriented film comprises the following process flows:
preparing a solution:
A DPPT-TT sample with a corresponding proportion is taken by a cleaned medicine spoon, PMMA sample powder with a certain proportion is taken again, the PMMA sample powder is placed in a clean glass bottle, and DCB solvent with a corresponding proportion is injected into the glass bottle in a nitrogen environment. The concentration ratio is 5mg/2mg/1ml for example. The solution was heated and dissolved on a heating table at 80 ℃ for 24 hours to prepare an organic semiconductor solution for use.
Preparation before pulling and coating:
And taking out the silicon wafer with the SiO 2, and cutting the silicon wafer to a square shape with the size of a bottle opening. Cleaning a silicon wafer, placing the silicon wafer in a beaker filled with absolute ethyl alcohol and deionized water for ultrasonic cleaning, carrying out ultrasonic cleaning on the absolute ethyl alcohol for 20min, carrying out ultrasonic cleaning on the deionized water for 20min, taking out the silicon wafer, drying the silicon wafer by nitrogen, placing the silicon wafer on a heating table at 100 ℃ for heating for 30min, drying the silicon wafer, treating the silicon wafer by using plasma for 300s, and finally cleaning the silicon wafer by using UV ozone for 30min.
Cleaning tweezers for clamping silicon chips, placing the tweezers in a beaker with absolute ethyl alcohol and deionized water for cleaning, ultrasonically cleaning the tweezers with the absolute ethyl alcohol for 20min, ultrasonically cleaning the tweezers with the deionized water for 20min, ultrasonically cleaning the tweezers with the absolute ethyl alcohol for 20min, drying the tweezers by a nitrogen gun, and heating the tweezers on a heating table at 80 ℃ for 30min to dry the tweezers. Binding the upper end of the forceps with the epithelial tendon for standby.
Taking out the prepared solution for standby, and performing parameter setting on a lifting instrument, wherein the dipping speed is set to be 12mm/min, the lifting speed is set to be 12mm/min, the dipping time is 100s, the lifting interval is 300s, and the dipping height is determined according to the height of the prepared solution, and is generally 25mm. The Tara height is determined by the size of the cut wafer and is typically 43mm.
And (3) a lifting and film plating process:
The cleaned silicon wafer is clamped by tweezers, the cleaned silicon wafer is fixed by rubber bands prepared in advance, the tweezers are arranged in a clamp of a lifting instrument, a solution bottle opening is aligned to the lifting direction of the silicon wafer, the lifting and coating of the silicon wafer are started by a starting instrument, and the film thickness of an organic semiconductor layer can be increased by multiple lifting, so that the expected film thickness of a device is prepared.
And rapidly transferring the pulled-up wafer to a heating table for pre-annealing, wherein the heating table is set at 80 ℃ and the annealing time is 5min, and then transferring the pre-annealed wafer to a glove box nitrogen environment for continuous annealing, wherein the annealing temperature is 150 ℃ and the annealing time is 60min. And taking the sheet off after the annealing is finished, and cooling for standby.
Preparing a source electrode and a drain electrode:
The method comprises the steps of placing a silicon wafer with a film prepared on an object stage of an evaporation instrument, washing and drying a mask plate by absolute ethyl alcohol and deionized water, covering the mask plate on the surface of a semiconductor film, fixing the mask plate by utilizing magnetic force, placing the mask plate on a bracket of the evaporation instrument, closing a cabin door, pumping vacuum to 5E-4Pa, slowly adjusting a knob to perform power adjustment, slowly rotating a sample, evaporating a source drain electrode at a speed of 0.2A/s, and closing a sample baffle when the evaporating thickness is 50 nm. And slowly reducing the power to finish evaporation.
Device separation:
And separating a plurality of independent organic devices prepared on one silicon wafer by using tweezers, and dividing organic semiconductor layers among the devices to enable the devices to be in independent working states, so that the preparation of the polymer oriented thin film transistor is completed. The preparation of the whole device is completed, and the organic polymer chain of the film with consistent high molecular orientation is protected. The device with the function of protecting the orientation of the organic thin film polymer chains is prepared, as shown in fig. 5, wherein 1 is the source electrode and the drain electrode of the organic field effect transistor, 2 is the organic semiconductor layer, DPPT-TT is taken as an example in the patent, 3 is the gate medium of the organic field effect transistor, the SiO 2 layer is taken as an insulating layer, and 4 is the gate of the organic field effect transistor. When the device is operated in the saturation region, 0V is applied to the source, 60V is applied to the drain, and 60V is applied to the gate. It is electrically tested.
As shown in FIG. 1, the Raman spectrum of the undoped PMMA-protected organic consistent polymer oriented film prepared by pulling and annealing at 80 ℃ and 150 ℃ can be seen, the Raman peak intensity of the organic semiconductor film prepared by the Langmuir-Blodgett process is reduced under polarized light after high-temperature annealing, which indicates that the polymer chains of the organic semiconductor film formed by the process have orientation consistency, and the high-temperature annealing can lead to reduced order.
FIG. 2 is a Raman spectrum diagram of an undoped PMMA-protected and doped PMMA-protected organic semiconductor film before and after annealing at 80 ℃ and 150 ℃, and can show that the Raman peak of the doped PMMA-protected organic consistent polymer oriented film is higher than the intensity of the doped PMMA-protected organic consistent polymer oriented film, which shows that the degree of order of DPPT-TT polymer chains of micro-doped PMMA is higher, the influence of high-temperature annealing on the degree of order of DPPT-TT polymer chains after the doping PMMA protection is smaller, and PMMA doping has an obvious protection effect on the ordered arrangement stability of DPPT-TT polymer chains.
The IV performance curves of the organic thin film transistor prepared from the organic semiconductor thin films formed in different directions in fig. 3 are compared with the saturation region transfer curves, and it can be seen that the organic thin film transistor prepared along the channel direction can still have a better saturation region transfer curve and a higher saturation current than other directions under the protection of undoped PMMA, that is, it is shown that the uniformity of the polymer chain along the channel direction has a positive effect on the device performance.
Fig. 4 is a graph of mobility bins measured before and after PMMA doping protection of devices formed in different directions when the channel length is 300 μm, and it can be seen that the mobility of the devices prepared by the polymer chains parallel to the channel direction is higher than that of the devices prepared by the vertical preparation, meanwhile, the mobility range of the organic field effect transistor prepared by PMMA protection is more convergent, the uniformity of the devices is higher, and the devices prepared and protected by the method have better performance in mobility and other aspects.
The foregoing preferred embodiments of the present invention are not limited to the scope of the present invention, and various modifications or applications according to the foregoing embodiments are within the scope of the present invention.

Claims (4)

1. The preparation method of the consistent high molecular organic polymer chain oriented film comprises the following steps:
(1) Preparing a solution:
taking DPPT-TT and PMMA powder, placing the powder into a glass bottle, injecting a solvent DCB into the glass bottle under a nitrogen environment, and placing the powder on a heating table for heating and dissolving to prepare an organic semiconductor solution; the concentration ratio of DPPT-TT, PMMA and solvent DCB is 5mg/2mg/1ml;
(2) Preparation:
Cutting a silicon wafer with silicon dioxide into square shapes with the size of a bottle mouth; sequentially carrying out absolute ethyl alcohol ultrasonic cleaning and deionized water ultrasonic cleaning on the silicon wafer, carrying out absolute ethyl alcohol ultrasonic cleaning, drying the silicon wafer by nitrogen, placing the silicon wafer on a heating table for heating and drying, carrying out plasma treatment, and finally carrying out UV ozone cleaning;
Sequentially carrying out absolute ethyl alcohol ultrasonic cleaning on tweezers for clamping the silicon wafer, deionized water ultrasonic cleaning, absolute ethyl alcohol ultrasonic cleaning, blow-drying by a nitrogen gun, and heating and drying on a heating table;
(3) Lifting and plating a film:
Clamping and fixing the cleaned silicon wafer by using tweezers, installing the tweezers in a clamp of a pulling instrument, aligning the bottleneck of the organic semiconductor solution with the pulling direction of the silicon wafer, and using the pulling instrument for dipping and pulling; the speed of the dipping is 12mm/min, the speed of the lifting is 12mm/min, the dipping time is 100s, and the lifting interval is 300s; the height of the immersion is consistent with the height of the liquid level, and the lifting height is consistent with the sum of the height of the liquid level and the width of the silicon wafer;
Transferring the pulled silicon wafer to a heating table for pre-annealing, setting the heating table to 80 ℃, and the annealing time to be 5min, transferring the pre-annealed silicon wafer to a nitrogen environment for continuous annealing, wherein the annealing temperature is 150 ℃, the annealing time is 60min, and taking down the silicon wafer for cooling after the annealing is completed.
2. The method for producing a uniform high molecular weight organic polymer chain oriented film according to claim 1, wherein the dipping and pulling are performed several times to increase the film thickness of the organic semiconductor layer.
3. A method for producing a transistor based on a uniform high molecular organic polymer chain oriented film, characterized by using the uniform high molecular organic polymer chain oriented film according to claim 1 or 2, comprising the steps of:
(1) Preparing a source electrode and a drain electrode:
Placing a silicon wafer with the film prepared on an object stage of an evaporation instrument, cleaning and drying a mask plate by using absolute ethyl alcohol and deionized water, covering the mask plate on the surface of a semiconductor film, fixing the mask plate by using magnetic force, placing the mask plate on a bracket of the evaporation instrument, closing a cabin door, pumping vacuum degree to 5E-4Pa, slowly rotating a sample, evaporating a source electrode and a drain electrode at a speed of 0.2A/s, closing a sample baffle plate when the evaporating thickness is 50nm, and completing evaporation;
(2) Device separation:
and separating a plurality of independent organic devices prepared on the silicon wafer by using tweezers, and separating organic semiconductor layers among the devices to enable the devices to be in independent working states.
4. The method for producing a transistor based on a uniform high molecular weight organic polymer chain oriented thin film according to claim 3, wherein the source-drain electrode is a 50nm thick gold vapor deposition source-drain electrode.
CN202310088394.XA 2023-02-09 2023-02-09 Consistent high molecular organic polymer chain oriented film and preparation method of transistor based on film Active CN116376408B (en)

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Citations (1)

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CN113540352A (en) * 2021-06-18 2021-10-22 吉林大学 Method for preparing organic crystal film by combining solution processing and vacuum evaporation

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JP2007096288A (en) * 2005-08-31 2007-04-12 Sumitomo Chemical Co Ltd Transistor and method of manufacturing same, and semiconductor device having the same

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CN113540352A (en) * 2021-06-18 2021-10-22 吉林大学 Method for preparing organic crystal film by combining solution processing and vacuum evaporation

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