CN116344676A - Solder presetting process based on silicon window wafer - Google Patents
Solder presetting process based on silicon window wafer Download PDFInfo
- Publication number
- CN116344676A CN116344676A CN202310390975.9A CN202310390975A CN116344676A CN 116344676 A CN116344676 A CN 116344676A CN 202310390975 A CN202310390975 A CN 202310390975A CN 116344676 A CN116344676 A CN 116344676A
- Authority
- CN
- China
- Prior art keywords
- silicon window
- wafer
- solder
- window wafer
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 67
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 67
- 239000010703 silicon Substances 0.000 title claims abstract description 67
- 229910000679 solder Inorganic materials 0.000 title claims abstract description 57
- 238000000034 method Methods 0.000 title claims abstract description 26
- 238000004806 packaging method and process Methods 0.000 claims abstract description 33
- 238000003466 welding Methods 0.000 claims abstract description 23
- 229910052751 metal Inorganic materials 0.000 claims abstract description 18
- 239000002184 metal Substances 0.000 claims abstract description 18
- 238000011161 development Methods 0.000 claims abstract description 11
- 238000004528 spin coating Methods 0.000 claims abstract description 11
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 8
- 239000012788 optical film Substances 0.000 claims description 24
- 239000010408 film Substances 0.000 claims description 13
- 238000007747 plating Methods 0.000 claims description 13
- 229910045601 alloy Inorganic materials 0.000 claims description 8
- 239000000956 alloy Substances 0.000 claims description 8
- 229920002120 photoresistant polymer Polymers 0.000 claims description 3
- 238000007731 hot pressing Methods 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 238000010923 batch production Methods 0.000 abstract description 3
- 238000000465 moulding Methods 0.000 abstract description 2
- 239000000758 substrate Substances 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
- 239000010936 titanium Substances 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000005476 soldering Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910000756 V alloy Inorganic materials 0.000 description 1
- 229910001093 Zr alloy Inorganic materials 0.000 description 1
- JMTJYLISOWJQAT-UHFFFAOYSA-N [Zr].[V].[Ti] Chemical compound [Zr].[V].[Ti] JMTJYLISOWJQAT-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910000833 kovar Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- PMTRSEDNJGMXLN-UHFFFAOYSA-N titanium zirconium Chemical compound [Ti].[Zr] PMTRSEDNJGMXLN-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Abstract
The invention relates to the technical field of packaging, in particular to a solder presetting process based on a silicon window wafer. According to the solder presetting process based on the silicon window wafer, S1, spin coating, exposure and development treatment are carried out on the silicon window wafer, and then a metal film is plated through magnetron sputtering; s2, preparing preformed solder, positioning and spot welding the solder and the silicon window wafer in the step S1 to obtain the silicon window wafer with the preset solder; s3, carrying out wafer level packaging on the silicon window wafer with the preset solder and the infrared detector wafer in the step S2, so that the production efficiency of the wafer level packaging of the infrared device is greatly improved through the preset molding solder, the cost of a packaging window is reduced, a foundation is laid for realizing the wafer level packaging of the infrared detector, and the requirement of integrated batch production is met.
Description
Technical Field
The invention relates to the technical field of packaging, in particular to a solder presetting process based on a silicon window wafer.
Background
The uncooled infrared detector is mainly packaged by a metal kovar tube shell and a ceramic tube shell, and the single tube shell, a temperature control device and a cylindrical getter are used, so that the price of the uncooled infrared detector is more than 70% after the packaging is finished, and the advantages of the uncooled infrared detector are difficult to fully embody. And before packaging, the infrared pixel substrate is cut into single chips, and the packaging quantity is limited to about 10 chips each time, so that the packaging process also becomes a bottleneck of mass production.
The wafer level package is an advanced packaging technology, and has the advantages of small size, good electrical performance, good heat dissipation, low cost and the like, and has been rapidly developed in recent years. As mobile electronic products tend to be light, multifunctional and low-power, the number of pins to be accommodated is increased in smaller packaging area. Unlike the traditional chip packaging mode of cutting first and then testing, the wafer-level chip packaging mode is to complete packaging on the whole wafer at one time by utilizing the wafer bonding technology, the photoetching technology, the etching technology and the rewiring technology which are manufactured by the previous wafer, then cut into individual IC particles, the size area after packaging is equal to the original design size of an IC bare wafer, and the size of the packaged chip after being completed by utilizing the wafer-level technology is reduced by at least 20 percent compared with the traditional packaging.
Meanwhile, the interconnection solder of the silicon window wafer level package is generally deposited by adopting thin film processes such as sputtering, vapor deposition and the like. As disclosed in patent No. 201811493070.X, an eight-inch infrared detector packaging window and a preparation method thereof are disclosed, wherein an optical film layer is plated on a first surface of an eight-inch wafer substrate, the optical film layer is distributed on the first surface of the wafer substrate in an array form, then a metal packaging layer is plated on the first surface of the eight-inch wafer substrate, and the metal packaging layer is arranged on the periphery of the optical film layer and takes a ring belt shape. And plating a getter layer on the first surface of the eight-inch wafer substrate, wherein the getter layer is placed in the annular band of the metal packaging layer and is placed side by side on the same plane with the optical film layer. And plating a solder layer on the surface of the metal packaging layer, wherein the solder layer is also in a ring shape, and the width of the ring belt is smaller than that of the metal packaging layer. Finally, plating an optical film layer on the second surface of the eight-inch wafer substrate, and uniformly distributing the optical film layer on the whole surface of the second surface of the wafer substrate. Patent No. 201821840653.0 discloses a wafer level package infrared detector, which is used for making an isolation gap between a cap wafer and an infrared pixel by etching a groove structure on the back surface of the cap wafer; the back of the cap is deposited with a metal sealing ring, which comprises a metal adhesion layer, a barrier layer and an oxidation resistant layer, and is respectively made of Ti/Pt/Au or Ti/Ni/Au combined metal materials; electroplating thick metal such as Sn, or Au/Sn on the sealing ring, wherein the thickness is about 10um or more; getter materials, titanium or titanium-zirconium alloy or titanium-zirconium-vanadium alloy are evaporated or sputtered in the grooves, so as to absorb residual gas to maintain and improve the vacuum degree of encapsulation. However, the two preset solder processes have the problems of uncontrollable component precision, very complex process flow and high deposition cost.
Disclosure of Invention
The invention aims to at least solve one of the technical problems in the prior art and provides a solder presetting process based on a silicon window wafer.
In order to achieve the above purpose, the technical scheme adopted by the invention is as follows: a solder presetting process based on a silicon window wafer comprises the following steps:
s1, carrying out spin coating, exposure and development treatment on a silicon window wafer, and plating a metal film by magnetron sputtering;
s2, preparing preformed solder, positioning and spot welding the solder and the silicon window wafer in the step S1 to obtain the silicon window wafer with the preset solder;
s3, carrying out wafer level packaging on the silicon window wafer with the preset solder and the infrared detector wafer in the step S2.
Further, step S1 includes
S101, sequentially carrying out first spin coating, first exposure and first development on the front surface of a silicon window wafer to expose a first region to be coated on the front surface of the silicon window wafer;
s102, removing photoresist after vacuum plating an optical film on a first area to be plated on the front surface of the silicon window wafer in the step S101, and obtaining the optical film silicon window wafer;
s103, sequentially carrying out second spin coating, second exposure and second development on the front surface of the optical film silicon window wafer in the step S102 to expose a second area to be coated on the front surface of the optical film silicon window wafer;
s104, performing direct-current magnetron sputtering on the second to-be-coated area on the front surface of the optical film silicon window wafer and the optical film silicon window wafer in the step S103, and plating a metal film.
Further, the solder includes one or more of a Sn-based alloy and an In-based alloy.
Further, the Sn-based alloy includes one or more of Sn96.5Ag3.5, sn99.3Cu0.7, sn90Sb10, sn91Zn9, sn42Bi58, au80Sn20, sn96.5Ag3Cu0.5, sn86.9In10Ag3.1, sn70Pb18In 12.
Further, the In-based alloy includes one or more of In100, in97Ag3, in52Sn48, in66.3bi33.7, in70Pb30, in51bi32.5sn16.5, in80Pb15Ag 5.
Further, the solder thickness is 25-100 μm.
Further, the step S2 of spot welding comprises spot welding by a laser mode, wherein the welding power is 70% -100%, and the welding speed is 9000 mm/S-13000 mm/S.
Further, the step S2 of spot welding also comprises spot welding by adopting a hot pressing mode, wherein the temperature of a pressing head is 30-50 ℃ below the solidus temperature of the solder, and the downward pressure is 5-25N.
The invention has the beneficial effects that: as can be seen from the above description of the present invention, compared with the prior art, the solder presetting process based on the silicon window wafer of the present invention comprises the steps of S1, performing spin coating, exposure and development on the silicon window wafer, and then plating a metal film by magnetron sputtering; s2, preparing preformed solder, positioning and spot welding the solder and the silicon window wafer in the step S1 to obtain the silicon window wafer with the preset solder; s3, carrying out wafer level packaging on the silicon window wafer with the preset solder and the infrared detector wafer in the step S2, so that the production efficiency of the wafer level packaging of the infrared device is greatly improved through the preset molding solder, the cost of a packaging window is reduced, a foundation is laid for realizing the wafer level packaging of the infrared detector, and the requirement of integrated batch production is met.
Meanwhile, the invention solves the problems of uncontrollable component precision, low deposition speed, limited film thickness, complex process and high cost of the traditional solder film process, and improves the air tightness of the package.
Drawings
Fig. 1 is a flow chart of a solder presetting process based on a silicon window wafer in a preferred embodiment of the invention.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are only some, but not all embodiments of the invention.
In the description of the present invention, it should be noted that, unless explicitly specified and limited otherwise, the terms "connected," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium. The specific meaning of the above terms in the present invention will be understood in specific cases by those of ordinary skill in the art.
Referring to fig. 1, a preferred embodiment of the present invention, a solder presetting process based on a silicon window wafer, comprises the following steps:
s1, carrying out spin coating, exposure and development treatment on a silicon window wafer, and plating a metal film by magnetron sputtering, wherein the metal film is a Ti/Pt/Au film;
specifically:
s101, sequentially carrying out first spin coating, first exposure and first development on the front surface of a silicon window wafer to expose a first region to be coated on the front surface of the silicon window wafer;
s102, removing photoresist after vacuum plating an optical film on a first area to be plated on the front surface of the silicon window wafer in the step S101, and obtaining the optical film silicon window wafer;
s103, sequentially carrying out second spin coating, second exposure and second development on the front surface of the optical film silicon window wafer in the step S102 to expose a second area to be coated on the front surface of the optical film silicon window wafer;
s104, performing direct-current magnetron sputtering on the second to-be-coated area on the front surface of the optical film silicon window wafer and the optical film silicon window wafer in the step S103, and plating a metal film.
S2, preparing preformed solder, positioning and spot welding the solder and the silicon window wafer in the step S1 to obtain the silicon window wafer with the preset solder;
wherein, the solder is Au80Sn20, and the thickness of the solder is 100 mu m, thus realizing the precise control of the composition and thickness of the solder and realizing the precise control of the composition of the solder.
The spot welding in this embodiment includes spot welding by laser, which has a welding power of 90% and a welding speed of 10000mm/s.
In addition, in this embodiment, the fixture is designed according to the wafer size, so that the preformed soldering lug and the silicon window wafer can be precisely aligned.
S3, carrying out wafer level packaging on the silicon window wafer with the preset solder and the infrared detector wafer in the step S2.
Dicing the wafer packaged into a whole, and then splitting the wafer into single infrared chips so as to facilitate the use of an imaging system, thereby realizing wafer-level packaging of the infrared detector and meeting the requirement of integrated batch production of the infrared detector.
The wafer level packaging window of the invention overturns the traditional small-piece production technology, realizes the integration and scale production of the optical packaging window, greatly reduces the cost of the packaging window, correspondingly reduces the cost of the infrared detector, and is more suitable for the explosive growth of the infrared market in the future.
In order to improve the productivity and yield of the preset solder silicon window wafer, the invention adopts a spot welding mode to preset the preformed solder on the silicon window wafer, accurately positions the preformed soldering lug and presets the preformed soldering lug on the silicon window wafer through a special spot welding process, solves the problems of uncontrollable component precision, low deposition speed, limited film thickness, complex process and high cost of the traditional film process, and improves the yield of airtight packaging.
The above additional technical features can be freely combined and superimposed by a person skilled in the art without conflict.
It will be understood that the invention has been described in terms of several embodiments, and that various changes and equivalents may be made to these features and embodiments by those skilled in the art without departing from the spirit and scope of the invention. In addition, many modifications may be made to adapt a particular situation or material to the teachings of the invention without departing from the essential scope thereof. Therefore, it is intended that the invention not be limited to the particular embodiment disclosed, but that the invention will include all embodiments falling within the scope of the appended claims.
Claims (8)
1. The solder presetting process based on the silicon window wafer is characterized by comprising the following steps of:
s1, carrying out spin coating, exposure and development treatment on a silicon window wafer, and plating a metal film by magnetron sputtering;
s2, preparing preformed solder, positioning and spot welding the solder and the silicon window wafer in the step S1 to obtain the silicon window wafer with the preset solder;
s3, carrying out wafer level packaging on the silicon window wafer with the preset solder and the infrared detector wafer in the step S2.
2. The silicon window wafer based solder pre-placement process of claim 1, wherein: the step S1 comprises
S101, sequentially carrying out first spin coating, first exposure and first development on the front surface of a silicon window wafer to expose a first region to be coated on the front surface of the silicon window wafer;
s102, removing photoresist after vacuum plating an optical film on a first area to be plated on the front surface of the silicon window wafer in the step S101, and obtaining the optical film silicon window wafer;
s103, sequentially carrying out second spin coating, second exposure and second development on the front surface of the optical film silicon window wafer in the step S102 to expose a second area to be coated on the front surface of the optical film silicon window wafer;
s104, performing direct-current magnetron sputtering on the second to-be-coated area on the front surface of the optical film silicon window wafer and the optical film silicon window wafer in the step S103, and plating a metal film.
3. The silicon window wafer based solder pre-placement process of claim 1, wherein: the solder includes one or more of a Sn-based alloy and an In-based alloy.
4. A silicon window wafer based solder pre-placement process according to claim 3, wherein: the Sn-based alloy comprises one or more of Sn96.5Ag3.5, sn99.3Cu0.7, sn90Sb10, sn91Zn9, sn42Bi58, au80Sn20, sn96.5Ag3Cu0.5, sn86.9In10Ag3.1 and Sn70Pb18In 12.
5. A silicon window wafer based solder pre-placement process according to claim 3, wherein: the In-based alloy comprises one or more of In100, in97Ag3, in52Sn48, in66.3bi33.7, in70Pb30, in51bi32.5sn16.5, and In80Pb15Ag 5.
6. The silicon window wafer based solder pre-placement process of claim 1, wherein: the thickness of the solder is 25-100 mu m.
7. The silicon window wafer based solder pre-placement process of claim 1, wherein: the step S2 of spot welding comprises spot welding by adopting a laser mode, wherein the welding power is 70% -100%, and the welding speed is 9000-13000 mm/S.
8. The silicon window wafer based solder pre-placement process of claim 7, wherein: the step S2 spot welding also comprises spot welding by adopting a hot pressing mode, wherein the temperature of a pressure head is 30-50 ℃ below the solidus temperature of the solder, and the downward pressure is 5-25N.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310390975.9A CN116344676A (en) | 2023-04-12 | 2023-04-12 | Solder presetting process based on silicon window wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310390975.9A CN116344676A (en) | 2023-04-12 | 2023-04-12 | Solder presetting process based on silicon window wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116344676A true CN116344676A (en) | 2023-06-27 |
Family
ID=86894975
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310390975.9A Pending CN116344676A (en) | 2023-04-12 | 2023-04-12 | Solder presetting process based on silicon window wafer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN116344676A (en) |
-
2023
- 2023-04-12 CN CN202310390975.9A patent/CN116344676A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101798054B (en) | Wafer-level vacuum encapsulating method for micro-electromechanical device | |
| CN102275863B (en) | Wafer-level vacuum encapsulating method for micro-electromechanical device | |
| JP5955392B2 (en) | Method for forming a connection portion used for bonding with a large diameter wire or strip between a metal molded body and a power semiconductor | |
| US4176443A (en) | Method of connecting semiconductor structure to external circuits | |
| US20030146384A1 (en) | Surface-mount package for an optical sensing device and method of manufacture | |
| US4078711A (en) | Metallurgical method for die attaching silicon on sapphire devices to obtain heat resistant bond | |
| WO1993013550A1 (en) | A method of constructing termination electrodes on yielded semiconductor die | |
| CN106449939A (en) | Structure of CSP chip with simplified upside-down-mounted LED structure and production method thereof | |
| CN211373872U (en) | Film platinum resistor temperature sensor | |
| JP2024060023A (en) | Thermal lensing electrode in thermoelectric generators for improved performance | |
| CN115036390A (en) | Method for preparing height-width ratio increased type welding point column, electronic device and infrared detector | |
| CN116344676A (en) | Solder presetting process based on silicon window wafer | |
| US6190947B1 (en) | Silicon semiconductor rectifier chips and manufacturing method thereof | |
| US7047815B2 (en) | Sensor and electrode extraction structure and method | |
| JP3277646B2 (en) | Method for manufacturing optical semiconductor device | |
| JPS59208789A (en) | Solar cell | |
| US4132813A (en) | Method for producing solderable metallized layer on a semiconducting or insulating substrate | |
| KR101457883B1 (en) | Flip chip structure and method of manufacture | |
| WO2021128030A1 (en) | Display substrate, manufacturing method and relevant transfer method therefor | |
| CN106409691A (en) | Method for preparing metal layers with different thicknesses at different positions of inner cavity of packaging housing | |
| CN111189554A (en) | Film platinum resistor temperature sensor and manufacturing method thereof | |
| US11094868B2 (en) | Method for producing an illumination device and illumination device | |
| EP0730294A2 (en) | Semiconductor device fabricating method of semiconductor device, and die-bonding method of semiconductor device | |
| WO2009145726A1 (en) | Micro electro mechanical device package and method of manufacturing a micro electro mechanical device package | |
| CN215377438U (en) | Micro LED packaging structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |