CN211373872U - Film platinum resistor temperature sensor - Google Patents
Film platinum resistor temperature sensor Download PDFInfo
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- CN211373872U CN211373872U CN202020174555.9U CN202020174555U CN211373872U CN 211373872 U CN211373872 U CN 211373872U CN 202020174555 U CN202020174555 U CN 202020174555U CN 211373872 U CN211373872 U CN 211373872U
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Abstract
The utility model discloses a film platinum resistance temperature sensor, which comprises a sapphire wafer, a surface platinum film layer, an alumina film layer, an isolation layer and a resistance lead; plating a surface platinum film layer on the front surface of the sapphire wafer, manufacturing the surface platinum film layer into a three-dimensional structure of a platinum resistor layout, arranging a welding point on the surface platinum film layer, and welding a resistor lead on the welding point; covering an alumina film layer above the surface platinum film layer; arranging an isolating layer above the alumina film layer and the welding point; the technical effect of the utility model lies in, film platinum resistance temperature sensor compares with traditional pottery platinum resistance element and thick film platinum resistance element, can reduction in production cost, improves production efficiency, has reduced product overall dimension, and response time when measuring is short, and the uniformity of product has abundant guarantee. Compared with the similar film resistor element, the temperature measuring device can greatly improve the temperature measuring range, has high resistance value precision, has better long-term stability and the like.
Description
Technical Field
The utility model relates to a temperature sensor especially relates to film platinum resistance temperature sensor.
Background
The platinum resistance temperature sensor has the technical advantages of both the thermocouple and the thermistor, overcomes the defects of the platinum resistance temperature sensor, and brings a new opportunity for the development of the field of temperature sensors. However, practical applications of ceramic platinum resistance elements and thick film platinum resistance elements, which were the first developed applications, are still limited due to their high cost. In the prior art, the thin film platinum resistance elements for measuring the high temperature of 850 ℃ and above 850 ℃ are generally in the form of ceramic platinum resistance elements and thick film platinum resistance elements, and the ceramic platinum resistance elements and the thick film platinum resistance elements are expensive in the thin film platinum resistance elements for measuring the high temperature of 850 ℃ and above 850 ℃.
SUMMERY OF THE UTILITY MODEL
The utility model realizes a film platinum resistance temperature sensor according to the defects of the prior art, and also comprises a sapphire wafer, a surface platinum film layer, an alumina film layer, an isolation layer and a resistance lead; the method is characterized in that a surface platinum film layer is plated on the front surface of the sapphire wafer and is made into a three-dimensional structure of a platinum resistor layout, a welding point is arranged on the surface platinum film layer, and the resistor lead is welded on the welding point; covering an alumina film layer above the surface platinum film layer; the isolating layer is arranged above the alumina film layer and the welding point.
Further, platinum slurry is applied to the welding point and sintered, and the thickness of a sintered platinum layer is 5-10 μm.
Furthermore, the resistance value of the film platinum resistor temperature sensor is linearly changed between 0 ℃ and 1000 ℃.
The technical effect of the utility model lies in, film platinum resistance temperature sensor in this embodiment compares with traditional pottery platinum resistance element and thick film platinum resistance element, has reduced the product overall dimension, and response time when measuring is short, and the uniformity of product has abundant guarantee. Compared with the similar film resistor element prepared by the film method by domestic manufacturers, the technology can greatly improve the temperature measurement range, has high resistance precision, better long-term stability, can reduce the production cost, improve the production efficiency and the like.
Drawings
Fig. 1 is a schematic structural diagram of the present invention.
Fig. 2 is a manufacturing flow chart of the product of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
With reference to fig. 1, the thin film platinum resistor temperature sensor disclosed in this embodiment further includes a sapphire wafer 1, a surface platinum thin film layer 2, an alumina film layer 3, an isolation layer 4, and a resistor lead 5; plating a surface platinum film layer 2 on the front surface of the sapphire wafer 1, manufacturing the surface platinum film layer 2 into a three-dimensional structure of a platinum resistor layout, arranging a welding point 51 on the surface platinum film layer 2, and welding a resistor lead 5 on the welding point 51; covering an alumina film layer 3 above the surface platinum film layer 2; the spacer 4 is provided above the alumina film layer 3 and the bonding pad 51. In this embodiment, platinum paste is applied to the solder joint 51 and sintered, and the thickness of the sintered platinum layer is 5 μm to 10 μm.
The resistance of the thin film platinum resistance temperature sensor in this example varied linearly between 0 deg.c and 1000 deg.c. The purity of the material of the sapphire wafer 1 in this example is 99.995% or more, which is a single crystal alumina material.
Referring to fig. 2, a method for manufacturing a thin film platinum resistor temperature sensor in this embodiment includes the following steps:
step S10: preparing the surface of the sapphire wafer: polishing the front and back surfaces of the sapphire wafer 1 until the total thickness deviation of the front and back surfaces of the sapphire wafer 1 is less than or equal to 20 microns, the surface flatness of the front and back surfaces of the sapphire wafer 1 is less than or equal to 20 microns, the curvature of the front and back surfaces of the sapphire wafer 1 is less than or equal to 20 microns, the warping degree of the front and back surfaces of the sapphire wafer 1 is less than or equal to 20 microns, and the surface roughness Ra of the front and back surfaces of the sapphire wafer 1 is less than or equal to 5nm and less than or equal to 20 nm; in this example, the sapphire wafer was prepared by nitrogen-filled packaging in a class 100 clean room. The film forming process comprises the following elements: purity of the platinum target material, background vacuum degree, sputtering pressure, process gas, target base distance, substrate temperature, sputtering voltage, sputtering current and the like.
Step S20: coating a sapphire wafer: plating a platinum film 2 on the front surface of the sapphire wafer 1 in the step S10; the thickness of the platinum film 2 is 1-3 μm;
step S30: homogenizing, namely putting the sapphire wafer obtained in the step S20 into a quartz wafer boat, integrally placing the sapphire wafer boat in a tube furnace, and annealing at the temperature of 300-500 ℃; the purpose of the annealing treatment is as follows: crystal grains are refined, the structure of the film layer is adjusted, the defects of vacancy, dislocation and the like in the film layer are eliminated, and the stability of the platinum film is improved; impurities such as carbon in the film are separated out, and the purity of the film layer is increased; enhance the adhesion between the platinum film layer and the wafer, etc. The main process parameters of annealing are annealing temperature and time, and the annealing environment has a considerable influence on the process.
Step S40: etching, namely removing redundant platinum materials from the surface of the platinum film 2 on the surface of the sapphire wafer obtained in the step S30 by adopting laser etching or ion beam etching to manufacture a three-dimensional structure of a platinum resistor layout;
step S50: secondary annealing, namely putting the sapphire wafer obtained in the step S40 into a quartz wafer boat again, and putting the whole sapphire wafer boat into a tube furnace for secondary annealing treatment at the temperature of 300-400 ℃; the purpose of the step is to process the platinum film on the surface of the sapphire wafer annealed in the step 2 into a resistor layout, because the noble metal platinum has very strong chemical stability and does not react with acid and alkali in general, the platinum film is processed by adopting two methods of laser etching or ion beam etching, and redundant platinum materials are removed from the surface to manufacture the three-dimensional structure designed by the platinum resistor layout.
Step S60: laser resistance adjustment, namely removing redundant platinum materials which do not conform to the platinum resistor from the sapphire wafer obtained in the step S50 by using a laser cutting machine, and fixing the resistance value of the sapphire wafer; the purpose of this step is to improve the accuracy and yield of the resistance value. Because of the non-repeatability of the film forming process and the film thickness of the platinum film and the inherent inaccuracy of the etching process, errors often occur in the platinum resistor, and the target value is achieved by performing laser resistance trimming on the wafer after secondary annealing.
Step S70: preparing an alumina film layer 3, and preparing a layer of alumina film layer 3 on the surface of the sapphire wafer obtained in the step S60 by adopting a chemical vapor deposition method, a physical vapor deposition method or a sol-gel method; the steps have the following purposes: firstly, the thermal expansion coefficient of the sapphire wafer is matched, the reliability of the film platinum resistor is improved in a stress compensation mode, and the failure of the platinum resistor is avoided; and the second is an isolation function, which is to isolate and encapsulate the metal elements in the glass slurry so as to prevent the platinum resistance element from failing due to the change of the temperature coefficient of the platinum resistance. Methods for preparing an alumina thin film are mainly classified into Chemical Vapor Deposition (CVD) or Physical Vapor Deposition (PVD) or sol-gel methods.
Step S80: preparing an isolation layer 4: printing a layer of glass slurry as an insulating, isolating and protecting layer on the sapphire wafer obtained in the step S70 by adopting a screen printing method, and putting the sapphire wafer into a muffle furnace for sintering; in the step, the glass slurry is used as an insulating, isolating and protecting layer. The protective layer is applied to the alumina layer by screen printing.
The properties of the glass paste largely determine the quality of the encapsulated component, and therefore knowing the properties of the glass paste prior to encapsulation, the selection of the appropriate glass paste is very important for encapsulating the article.
Generally, encapsulating glass pastes have the following performance requirements:
proper softening temperature and sintering temperature, and the sintering temperature of the selected glass paste is lower than the highest temperature which can be borne by the element.
Secondly, the thermal shock resistance is good, so that the encapsulation failure caused by cracking at the interface of the encapsulation glass and the element when the environmental temperature is changed violently is avoided.
And the expansion coefficient is matched with that of the element, and the expansion coefficients of the two elements are different by not more than 10% so as to prevent the excessive stress at the encapsulation interface from generating cracks.
And fourthly, the stability is good, and the process stability and the chemical stability are mainly shown. The process stability requires that the encapsulation glass does not chemically react with the component during sintering, ensuring stable performance of the component. Chemical stability refers to the ability of the encapsulating glass to withstand attack by corrosive gases such as acids and alkalis, as well as chemical agents during use.
Fifthly, the surface of the element is required to have better fluidity at the sintering temperature and can be spread to a certain degree.
The wettability is good, the surface of the packaging glass and the element is tightly connected, the packaging air tightness is good, and the binding force is strong.
High insulation property requires higher breakdown voltage and resistivity of the encapsulation glass.
And (3) selecting proper encapsulation glass slurry, printing a layer of slurry with proper thickness on the surface of the element in the step (8) by adopting a screen printing process, and sintering in a muffle furnace. During screen printing, care should be taken that the glass paste completely covers the surface of the component but does not overflow and spread onto the leads outside the component.
The properties of the selected encapsulating glass paste determine the sintering process, and the following sintering conditions need to be controlled: peak temperature, peak time, sintering atmosphere, number of sintering times, ambient temperature, etc.
Step S90: laser splitting, namely dividing the sapphire wafer obtained in the step S80 into a plurality of single film platinum resistor temperature sensors by using a laser cutting machine; the purpose of this step is to divide the wafer into a certain number of elements for subsequent steps. Due to the adoption of the aluminum oxide and glass paste protection circuit, patterns and boundaries cannot be distinguished on the front surface. By adopting the sapphire wafer with double-side polishing, the patterns, particularly the boundaries, can be seen clearly from the back very conveniently, and the laser cutting machine is guided to split. In order to increase the reliability of the welding spot, a screen printing method is adopted, platinum paste is applied to the welding spot area, and welding is carried out after sintering.
Step S100: welding a resistance lead 5: applying platinum paste to the welding spot area on the single thin film platinum resistor temperature sensor obtained in the step S90, and after sintering, respectively welding two resistor leads to the positions of the two welding spots exposed by the single element by using thermocompression bonding or laser welding; lead welding has two methods, thermocompression bonding and laser welding. The thermocompression bonding is to bond the lead and the platinum film land together by heating and applying pressure. The principle is that the metal in the welding area is plastically deformed by heating and pressurizing, and the contact surface of the pressure-welded lead wire and the metal reaches the range of the gravitation of atoms, so that the attractive force is generated among the atoms to achieve the purpose of bonding. The hot-press welding can control parameters such as temperature, time and the like with high precision, can realize repeated high-quality production, and has wide application in electronic device connection.
In the welding process, on the basis of temperature control, the accurate control of welding pressure and welding head displacement is combined, the coordination matching of temperature, pressure and displacement is realized, and the connection quality of a hot-press welding spot can be improved.
The laser welding, in particular to the laser micro welding, is a multifunctional flexible manufacturing technology, has the advantages of small focusing point, high energy density, accurate and controllable heat input and the like, can manufacture micro devices, precise devices and the like by matching with a proper process, and has wide application prospect in various industrial fields.
For laser micro-welding, the most important process parameters are laser power density and focused spot area. The high quality laser beam helps to reduce the size of the laser focus spot, increase the laser power density and regulate the energy density on the focus spot in order to obtain flat top, multi-spot, etc. modes. For pulsed laser systems, laser micro-welding process parameters also include pulse length, pulse peak power, pulse energy, and pulse repetition rate.
Step S110: and (4) encapsulating and sintering welding points, covering glass slurry on the two welding points obtained in the step (S100), placing the two welding points into a muffle furnace again for sintering, and cooling to obtain the single film platinum resistor temperature sensor. The purpose of this step is to protect the solder joints in step S100 to avoid environmental pollution and to improve aging resistance. The properties of the selected encapsulating glass paste determine the sintering process, and the following sintering conditions need to be controlled: peak temperature, peak time, sintering atmosphere, number of sintering times, ambient temperature, etc.
As a preferred embodiment of the present invention, it is obvious to those skilled in the art that the present invention is not limited to the details of the above-described exemplary embodiments, and that the present invention can be implemented in other specific forms without departing from the spirit or essential characteristics of the present invention, and that the scope of the present invention is also encompassed by the present invention. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. Any reference sign in a claim should not be construed as limiting the claim concerned.
Furthermore, it should be understood that although the present description refers to embodiments, not every embodiment may contain only a single embodiment, and such description is for clarity only, and those skilled in the art should integrate the description, and the embodiments may be combined as appropriate to form other embodiments understood by those skilled in the art.
Claims (4)
1. A film platinum resistance temperature sensor also comprises a sapphire wafer, a surface platinum film layer, an alumina film layer, an isolation layer and a resistance lead; the method is characterized in that a surface platinum film layer is plated on the front surface of the sapphire wafer and is made into a three-dimensional structure of a platinum resistor layout, a welding point is arranged on the surface platinum film layer, and the resistor lead is welded on the welding point; covering an alumina film layer above the surface platinum film layer; the isolating layer is arranged above the alumina film layer and the welding point.
2. The thin film platinum resistance temperature sensor as claimed in claim 1, wherein a platinum paste is applied to said solder joint and sintered to a thickness of 5 μm to 10 μm.
3. The thin film platinum resistance temperature sensor as claimed in claim 2, wherein the resistance of the thin film platinum resistance temperature sensor is linearly varied between 0 ℃ and 1000 ℃.
4. The thin film platinum resistance temperature sensor according to claim 1, wherein the sapphire wafer is made of a single crystal alumina material with a purity of 99.995% or more.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202020174555.9U CN211373872U (en) | 2020-02-17 | 2020-02-17 | Film platinum resistor temperature sensor |
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| CN202020174555.9U CN211373872U (en) | 2020-02-17 | 2020-02-17 | Film platinum resistor temperature sensor |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111189554A (en) * | 2020-02-17 | 2020-05-22 | 上海福宜纳米薄膜技术有限公司 | Film platinum resistor temperature sensor and manufacturing method thereof |
| CN113186528A (en) * | 2021-04-30 | 2021-07-30 | 上海铂源微电子有限公司 | Platinum film and preparation method and application thereof |
| CN113720487A (en) * | 2021-09-28 | 2021-11-30 | 江西省纳米技术研究院 | Thin film resistor structure, and preparation method and application thereof |
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2020
- 2020-02-17 CN CN202020174555.9U patent/CN211373872U/en active Active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111189554A (en) * | 2020-02-17 | 2020-05-22 | 上海福宜纳米薄膜技术有限公司 | Film platinum resistor temperature sensor and manufacturing method thereof |
| CN111189554B (en) * | 2020-02-17 | 2024-06-18 | 上海福宜纳米薄膜技术有限公司 | Film platinum resistor temperature sensor and manufacturing method thereof |
| CN113186528A (en) * | 2021-04-30 | 2021-07-30 | 上海铂源微电子有限公司 | Platinum film and preparation method and application thereof |
| CN113720487A (en) * | 2021-09-28 | 2021-11-30 | 江西省纳米技术研究院 | Thin film resistor structure, and preparation method and application thereof |
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