CN116344445A - 通过用于激光分割的平衡压缩和缩回循环力受控扩散激光诱导硅裂缝的方法 - Google Patents
通过用于激光分割的平衡压缩和缩回循环力受控扩散激光诱导硅裂缝的方法 Download PDFInfo
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Abstract
本申请题为“通过用于激光分割的平衡压缩和缩回循环力受控扩散激光诱导硅裂缝的方法”。一种方法(200)包括:将激光脉冲沿一个方向施加(210)到晶片的侧面,以在晶片中的相应第一和第二深度处产生第一和第二隐蔽损坏区,并且产生在晶片中从相应隐蔽损坏区延伸并沿该方向彼此间隔开的裂缝;将压缩和缩回循环力沿第三方向施加(220)到晶片,以使来自相应隐蔽损坏区的裂缝扩散并接合在一起;以及展开(230)晶片以从晶片分离各个管芯。
Description
背景技术
管芯切单(singulation)或分割涉及从晶片分离各个半导体管芯。激光切割可用于切割晶片,但较高功率设置可导致激光分割期间不受控制的裂缝扩散和飞溅的激光或飞溅损坏,其损坏管芯的有源电路。降低激光功率和/或频率可以减轻激光飞溅损坏,但这可导致在切割线突破器件划线密封的情况下管芯未分离和切分或弯曲故障,从而导致产品产量下降。
发明内容
在一个方面,一种从晶片分离管芯的方法包括:沿一个方向将激光脉冲施加到晶片的侧面,以在晶片中相应的第一和第二深度处产生第一和第二隐蔽损坏区并且产生在晶片中从相应隐蔽损坏区延伸并沿该方向彼此间隔开的裂缝;沿第三方向将压缩和缩回循环力施加到晶片,以使来自相应隐蔽损坏区的裂缝扩散并接合在一起;以及展开晶片以从晶片分离各个管芯。
在另一方面,一种制造电子器件的方法包括:沿一个方向将激光脉冲施加到晶片的侧面,以在晶片中相应的第一和第二深度处产生第一和第二隐蔽损坏区域,并且产生在晶片中从相应隐蔽损坏区域延伸并沿该方向彼此间隔开的裂缝;沿第三方向将压缩和缩回循环力施加到晶片,以使来自相应隐蔽损坏区域的裂缝扩散并接合在一起;展开晶片以从晶片分离各个管芯;将各个管芯中的一个管芯附接到管芯附接焊盘或封装衬底上;将各个管芯中的一个管芯的端子电连接到电路或导电引线;以及将各个管芯中的一个管芯封装在封装结构中。
在另一方面,一种系统包括激光锯工具、振动工具和晶片展开器工具。激光锯工具在晶片的正交的第一和第二方向的平面中将激光脉冲施加到侧面,以在晶片中相应的第一和第二深度处产生第一和第二隐蔽损坏区域并产生裂缝,这些裂缝在晶片中从相应隐蔽损坏区域延伸并且沿与第一和第二方向正交的第三方向彼此间隔开。振动工具沿第三方向将压缩和缩回循环力施加到晶片,以使来自相应隐蔽损坏区域的裂缝扩散并接合在一起,而晶片展开器工具沿第一和第二方向展开晶片,以从晶片分离各个管芯。
附图说明
图1是用于从晶片分离各个半导体管芯的管芯分离系统的系统图。图1A示出在管芯分离操作之前的晶片的局部截面侧视图。
图2是用于从晶片中分离管芯和制造电子器件的组合方法的流程图。
图3和图3A是晶片的一部分的局部截面侧视图和端部立面图,该晶片经历多道次(multi-pass)激光隐蔽切割操作的第一道次,以在第一深度处产生第一隐蔽损坏区域和沿分离路径的相关裂缝。
图4是晶片的局部截面侧立面图,该晶片经历多道次激光隐蔽切割操作的第二道次,以在第二深度处产生第二隐蔽损坏区域和相关裂缝。
图5是晶片的局部截面侧立面图,该晶片经历压缩和缩回循环力过程以使来自相应隐蔽损坏区域的裂缝扩散并接合在一起。
图6是安装在晶片展开器工具中的载体带上的晶片的顶透视图。
图7是已展开以从晶片分离各个管芯的载体带的顶透视图。
图8是已封装的电子器件的顶透视图。
具体实施方式
在附图中,相同附图标记在全文中指代相同元件,而且各种特征不一定按比例绘制。图1示出基于激光的管芯切单或管芯分离系统100,用于从加工的晶片101分离各个半导体管芯。图1A示出在系统100中进行管芯分离操作之前的晶片101的局部截面侧视图。如在图1A中所见,晶片101包括起始半导体层102和有源电路部分103,有源电路部分103包括所制造的元件,诸如一个或多个晶体管、电容器、电阻器、二极管等(未示出)。图1中的系统100包括激光锯工具104、超声振动工具106和晶片展开器工具108,并且这些工具被操作以从起始晶片101分离半导体管芯110。
晶片101包括布置成行和列并由划线区域111(例如,准分离区域)分开的多个准管芯区域,其中没有形成电路。晶片101具有大体上平坦的相对的第一侧面(例如,顶侧面)121和第二侧面(例如,底侧面)122,并且有源电路部分103沿第一侧面121延伸。晶片101的侧面121和122被示出为定位在第一方向X(图1和图1A)和正交的第二方向Y(图1)的相应平面内。第一侧面121和第二侧面122沿与第一方向X和第二方向Y正交的第三方向Z彼此间隔开。在下面描述的实施方式中,从第二或底侧面122进行分离操作,并且晶片101的第一侧面121被支撑在载体结构上,例如允许在系统100的各种工具中运输和支撑晶片101的粘性载体带。
在一个示例中,工具104、106和108通过适当的布置和编程被配置为从起始晶片101分离各个半导体管芯110,其示例将在下文中结合图2-图7另外描述。在操作中,激光锯工具104对晶片101的第二侧面122施加激光脉冲,以在沿第三方向Z的相应深度处产生隐蔽损坏区域。激光脉冲也产生在相应隐蔽损坏区域上方和下方延伸的裂缝。在图示的示例中,激光锯工具104被配置为具有激光功率设置,使得通过激光脉冲形成的裂缝在晶片101中沿第三方向Z向上和向下延伸,但是与沿第三方向Z的不同深度处的不同隐蔽损坏区域相关的裂缝不接合在一起,而是沿第三方向Z彼此间隔开。
在一个示例中,激光锯工具104被配置为操作激光器和位置控制器,以便以激光功率和焦点设置沿分离路径向晶片101的第二侧面122施加激光脉冲,从而在晶片101中的目标深度处产生隐蔽损坏区域并产生裂缝,这些裂缝在晶片101中从隐蔽损坏区域延伸,而不扩散到晶片101中的其他裂缝。将激光锯工具104配置有受控激光能量应用会减轻激光切割期间的晶片101中的飞溅损坏。如所述,例如,通过沿图1所示的划线区域111进行扫描,激光锯工具104的激光隐蔽损坏操作在沿第三方向Z的两个或多个深度处以期望分离模式产生局部隐蔽损坏区域,其中激光功率在相应隐蔽损坏区域的上方和下方产生裂缝,而一个深度处的隐蔽损坏区域的裂缝不会扩散得足够远以与不同深度处的另一隐蔽损坏区域的裂缝连接。
振动工具106被配置为沿第三方向Z向晶片101施加220压缩和缩回循环力,以使来自相应隐蔽损坏区域的裂缝扩散并接合在一起。在下面说明的实施方式中,使用激光锯工具104在两个深度处产生隐蔽损坏区域,并且沿第三方向Z来回振动晶片101(例如,机械致动),使得来自较深隐蔽损坏区域的下裂缝向下扩散到晶片101的第一侧面121,并且来自较深的隐蔽损坏区域的上裂缝向上扩散。沿第三方向Z的压缩和缩回循环力同时延伸或扩散上隐蔽损坏区域的裂缝,使来自较浅的隐蔽损坏区域的下裂缝沿第三方向Z向下扩散,与来自较深隐蔽损坏区域的上裂缝接合,而来自较浅隐蔽损坏区域的上裂缝向上扩散到晶片101的第二侧面122。振动工具106的配置有利于在划线区域111中晶片101的整个第三方向范围内的管芯分离,同时减轻管芯未分离和切分或与较高功率激光切割相关的弯曲故障。在一个示例中,振动工具106被配置为在流体浴中将超声循环力施加到晶片101。在另一示例中,振动工具106被配置为将超声循环力施加到支撑晶片101的晶片卡盘台。在另一示例中,振动工具106被配置为在柔性框架中的带载体上支撑晶片101,用环形晶片台支撑柔性框架,其中晶片101与晶片台没有物理接触,并将超声循环力施加到晶片台。
晶片展开器工具108被配置为沿第一方向X和第二方向Y展开晶片101,以便从晶片101分离各个管芯110。在一个示例中,晶片展开器工具108被配置为在载体带上支撑晶片101并且沿第一方向X和第二方向Y拉伸234载体带601,以从晶片101分离各个管芯110。结合起来,激光锯工具104的配置减轻了初始裂缝扩散,同时也减轻了激光飞溅损坏,而振动工具106的配置完成了裂缝扩散,以提供解决导致产品产量减少的所有这些问题的解决方案。
还参考图2-图8,图2示出用于制造电子器件的方法200,其中包括用于从晶片101分离管芯110的方法,图3-图7示出晶片101的管芯110在系统100中的管芯分离,并且图8示出由方法200生产的成品封装电子器件。方法200被示出为在对晶片101的第一侧面(顶侧面)进行晶片加工以在半导体层102上或在半导体层102中构建晶体管、电容器、电阻器、二极管等并在有源电路部分103中形成一个或多个金属化层之后并且在管芯分离之前。在图2中的202处,将晶片安装在载体结构上。图3示出一个示例,其中在202处安装晶片101以使得第一侧面121在粘性载体带301上。在一个示例中,晶片101在204处经历可选的背面研磨,例如将第二侧面122平坦化并设置最终期望管芯厚度。
还参考图3和图3A,晶片101被转移到激光锯工具104(图2中的202处),以使用隐蔽破坏技术进行激光切割。图3示出一个示例,其中激光锯工具104实现激光切割工艺300。激光锯工具104包括激光器310,该激光器可操作以产生激光束312,并通过聚焦透镜314沿第三方向Z朝向晶片101的第二侧面122引导激光束312。图3和图3A示出晶片101的一部分在激光锯工具104中经历第一道次隐蔽切割工艺300,以在图2的210处在第一深度316处沿分离路径P产生第一隐蔽损坏区域302和相关联的上裂缝304和下裂缝305。
方法200包括在210处将激光脉冲施加到晶片101的第二侧面122。一种实施方式包括当激光器310沿晶片101的准管芯区域之间的图1的划线区域111平移通过编程的扫描路径时,沿第三方向Z施加相应焦距的激光脉冲。在一个示例中,210处的处理是两道次(two-pass)操作,其在晶片101中相应的第一深度和第二深度处产生第一隐蔽损坏区域和第二隐蔽损坏区域。在另一示例中,在晶片101的第二侧面122下的相应深度距离处产生两组以上的隐蔽损坏区域。在一种实施方式中,对于212处的每一道次,设置激光聚焦或焦距调整,以将激光束312聚焦在目标深度。在图3和图3A中的示例第一道次中,焦点调整被设置为针对期望或目标第一深度316。在一个示例中,方法200还包括在214处设置激光功率,以在晶片101中的目标深度316处产生隐蔽损坏区域。在此实施例中,方法200还包括在216处操作激光器310和位置控制器(未示出)以沿扫描路径或分离路径P将激光脉冲施加到晶片101的第二侧面122。在图示的示例中,分离路径P沿着X方向和Y方向遵循图1的划线区域111。
图3和图3A示出第一道次激光切割工艺300的一些部分,该工艺在激光器310沿分离路径P相对于晶片101平移时产生激光脉冲,以在第一深度316处产生第一隐蔽损坏区域302。此示例中的分离路径P沿图1的划线区域111在晶片101的准管芯区域之间的X方向和Y方向上对齐。如图3A所示,在一个示例中将脉冲频率和扫描速率设定为使相继的第一隐蔽损坏区域302重叠或相邻并形成与分离路径P平行的连续激光损坏线,其在第一深度316处沿第三方向Z居中。这些激光脉冲还产生从晶片101中的第一隐蔽损坏区域302沿第三方向Z向上和向下延伸的相应第一裂缝(例如,上裂缝)304和第二裂缝(例如,下裂缝)305。
在图2中的218处,激光锯工具104确定在210处的多道加工的最后一道工序是否已经完成。如果没有(218处为“否”),则方法200返回到212处进行下一次加工。在图示的两道加工示例中,第二道加工包括在212处设置激光聚焦或焦距调整,使激光束312聚焦于图4中较浅的第二目标深度416,并在214处设置激光功率。在一个示例中,对于两个道次来说,功率设置相同。在另一示例中,第一道次和第二道次的功率设置不同。在216处,操作激光器310和位置控制器以沿分离路径P将激光脉冲施加到晶片101的第二侧面122。图4示出一个示例,其中晶片101经历多道激光隐蔽切割操作210的第二道次,以使用相同的分离路径P沿图1的划线区域111在较浅的第二深度416处产生第二隐蔽损坏区域402和相关裂缝404和405。在214处设置激光功率并在晶片101中的第二目标深度416处产生隐蔽损坏区域402。
如图4所示,在两个道次中的受控激光能量应用在相应隐蔽损坏区域的上方和下方产生裂缝,而在一个深度处的隐蔽损坏区域的裂缝没有扩散得足够远而连接到不同深度处的另一隐蔽损坏区域的裂缝。在210处施加的激光脉冲以多个脉冲的方式沿第三方向Z在不同深度316、416处以期望分离图案沿划线区域111产生局部隐蔽损坏区域302和402,其中激光功率控制裂缝304、305、404和406在相应隐蔽损坏区域302和402的上方和下方的扩散,在一个深度处的隐蔽损坏区域的裂缝没有扩散得足够远而连接到不同深度处的另一隐蔽损坏区域的裂缝。在图示的示例中,裂缝304和405沿第三方向Z以非零距离410彼此间隔开,而裂缝305和404不沿第三方向Z延伸到晶片101的相应第一侧面121和第二侧面122(例如,与其间隔开)。虽然这没有在无弯曲故障或管芯未分离的情况下为最终器件分离提供足够的裂缝扩散,但此激光功率控制配置减轻了210处的隐蔽损坏激光脉冲处理期间的激光飞溅损坏。
一旦完成了最后一道激光(图2中的218处为“是”),方法200继续在220处将压缩和缩回循环力施加到晶片101。在220处的处理解决裂缝间距,并进一步扩散裂缝304、305、404和406,使得裂缝304和405接合在一起且裂缝305和404沿第三方向Z进一步扩散到晶片101的相应第一侧面121和第二侧面122。图5示出一个示例,其中在222处将晶片101转移到第二载体,例如粘性分割带载体501,并在224处转移到超声振动工具106上并被支撑在晶片卡盘或其他夹具502上。
在图2中的226处,沿期望的裂缝扩散方向(例如第三方向Z)振动晶片101,以从相应隐蔽损坏区域302和402扩散裂缝304、305、404和405并将裂缝304和405接合在一起。图5的示例中的晶片卡盘502在操作上与超声致动器504耦接。致动器504被配置为沿第三方向Z将振荡方向506上的循环机械力施加到卡盘502和晶片101。在一个示例中,致动器504直接或间接地沿第三方向Z将基本上为正弦波的循环机械力施加到晶片101。在另一实施方式中,致动器504被配置为施加不同波形或波形状(例如,非正弦波)的循环机械力。如图5所示,施加的循环机械力也将裂缝305和404扩散到晶片101的相应第一侧面121和第二侧面122。
在一个示例中,超声振动工具106包括流体浴,例如去离子水,并且致动器504与该流体耦接。将晶片101支撑在浸没在流体中的载体上,并且致动器504向流体施加压缩和缩回循环力以振动流体浴中的晶片101。在一种实施方式中,致动器504以低于90kHz(例如大约15kHz)的频率施加超声循环力,持续大约60秒。在另一示例中,超声振动工具106包括支撑晶片101和载体带501的晶片卡盘台,并且致动器504被机械地耦接以将压缩和缩回循环力施加到晶片卡盘台。在一种实施方式中,致动器504以低于90kHz(例如大约15kHz)的频率将超声循环力施加到晶片卡盘台,持续大约60秒或更短。在另一示例中,超声振动工具106包括具有环形晶片台的柔性框架,该环形晶片台将晶片101支撑在带载体501上,其中晶片101与晶片台没有物理接触。在此示例中,晶片101被支撑在柔性框架中的带载体上,柔性框架相对于环形晶片台被支撑,并且致动器504被机械地耦接以将压缩和缩回循环力提供到晶片台。致动器504将压缩和缩回循环力提供到晶片台,并间接提供到晶片101。可以使用其他实施方式,通过该实施方式在220处直接或间接地将压缩和缩回循环力施加到晶片101。
图2中的方法200在230处继续沿第一方向X和第二方向Y展开晶片101,以从晶片101分离各个管芯110。一种实施方式包括在232处将晶片101安装在晶片展开器工具108中的分割带载体上并在234处拉伸分割带以分离各个管芯110。图6示出一个示例,其中晶片在232处被支撑在载体带601上,其中晶片101的第二侧面122粘附到载体带601。在图7中,如图7中的箭头所示,执行拉伸工艺700,该工艺沿第一方向X和第二方向Y向外拉伸载体带601,以从晶片101分离各个管芯110。然后,管芯切单处理完成,并且管芯110可以被转移到封装操作,以便组装成封装的电子器件,例如,集成电路。
在图2中的340处,电子器件制造示例继续进行管芯附接处理以将各个管芯110中的一个管芯附接到管芯附接焊盘或封装衬底上。在340处还执行一个或多个电连接工艺,例如,倒装芯片管芯附接焊接和/或导线键合,以将各个管芯110的一个或多个端子电连接到预期器件的电路或导电引线。在350处,进行模制和封装分离操作,以提供成品封装电子器件。图8示出一种示例封装电子器件800,其包括在模制封装结构802中的分离的半导体管芯110,其暴露出可被焊接到主机印刷电路板(PCB,未示出)的导电器件引线或端子201-208的底部或侧面。
在各种实施方式中使用较低激光功率减轻或避免了激光切割期间的晶片101中的激光飞溅损坏,并且使用振动工具106施加压缩和缩回循环力有利于晶片101的整个第三方向范围内的管芯分离,同时减轻与较高功率激光切割有关的管芯未分离和切分或弯曲故障。在一个示例中,激光脉冲功率被设置为0.5W或更小的非零值(例如,在图2中的214处),以减轻或避免激光飞溅损坏。相比之下,使用较高激光功率(例如,大于1W,如大约2W)可以增加激光飞溅损坏的可能性和程度。在某些实施方式中,振动工具106在整个晶片101上均匀地施加平衡的压缩和缩回循环力(例如在226处),并使激光诱导的裂缝进一步扩散且使内部裂缝(例如,裂缝304和405)相互连接,而使顶层和底层的裂缝(例如,裂缝305和404)分别到达器件有源电路侧表面122和背侧表面121。平衡的循环振动频率、振幅和/或功率设置可以在给定应用中进行调整,以帮助控制裂缝扩散,使其遵循最初产生的激光诱导裂缝的分离路径/方向。在一个示例中,对于直径为300mm、Z向厚度为130μm、目标管芯尺寸为0.8mm×1.3mm的硅晶片101,激光锯工具104是或包括在210处以0.5瓦或更低的激光功率设置进行激光锯加工的NS900激光工具。在此示例中,在使用D821HS分割带将晶片101安装在Flexframe柔性框架上的情况下进行循环振动。在另一实施方式中,振动工具106是或包括MU-1200批量型超声工具,其使用去离子(DI)水介质,通过DI水浴以15kHz的频率使用超声力将循环压缩和缩回力施加到晶片101,持续约60秒。在一些示例中,使用低功率激光隐蔽损坏区域的产生在划线区域111中沿分离路径P示出一条粗黑线,表明在激光锯加工期间裂缝没有连接。所描述的示例有利于非常低功率的激光锯参数,其提供显著的工艺余量以避免激光飞溅损坏失效模式。除了激光飞溅损坏风险低至零的优势外,所述示例还有利于激光锯加工的高质量(如高产量),包括诸如良好管芯分离率、良好弯曲和切分性能等优点。
在所描述的示例中可以进行修改,并且在权利要求的范围内其他实施方式也是可能的。
Claims (20)
1.一种从晶片分离管芯的方法,所述方法包括:
在所述晶片的正交的第一方向和第二方向的平面中将激光脉冲施加到侧面,以在所述晶片中的相应第一深度和第二深度处产生第一隐蔽损坏区域和第二隐蔽损坏区域,并且产生在所述晶片中从相应的隐蔽损坏区域延伸并沿与所述第一方向和所述第二方向正交的第三方向彼此间隔开的裂缝;
将压缩和缩回循环力沿所述第三方向施加到所述晶片,以使来自相应的隐蔽损坏区域的所述裂缝扩散并接合在一起;以及
沿所述第一方向和所述第二方向展开所述晶片以从所述晶片分离各个管芯。
2.根据权利要求1所述的方法,其中将所述压缩和缩回循环力施加到所述晶片包括在流体浴中将超声循环力施加到所述晶片。
3.根据权利要求2所述的方法,其中以90kHz或更低的频率施加所述超声循环力。
4.根据权利要求1所述的方法,其中将所述压缩和缩回循环力施加到所述晶片包括将超声循环力施加到支撑所述晶片的晶片卡盘台。
5.根据权利要求1所述的方法,其中将所述压缩和缩回循环力施加到所述晶片包括:
在柔性框架中的带载体上支撑所述晶片;
用环形晶片台支撑所述柔性框架,其中所述晶片与所述晶片台没有物理接触;以及
将超声循环力施加到所述晶片台。
6.根据权利要求1所述的方法,其中施加所述激光脉冲包括针对第一道次和第二道次中的每一个进行以下操作:
设置激光焦点以使激光束聚焦在目标深度处;
设置激光功率以在所述晶片中的所述目标深度处产生所述隐蔽损坏区域并且产生所述裂缝,所述裂缝在所述晶片中从所述隐蔽损坏区域延伸而不扩散到所述晶片中的其他裂缝;以及
操作激光器和位置控制器以将激光脉冲沿分离路径施加到所述晶片的所述侧面。
7.根据权利要求1所述的方法,其中展开所述晶片包括:
将所述晶片支撑在载体带上;以及
沿所述第一方向和所述第二方向拉伸所述载体带以从所述晶片分离各个管芯。
8.一种制造电子器件的方法,所述方法包括:
在晶片的正交的第一方向和第二方向的平面中将激光脉冲施加到侧面,以在所述晶片中的相应第一深度和第二深度处产生第一隐蔽损坏区域和第二隐蔽损坏区域,并且产生在所述晶片中从相应的隐蔽损坏区域延伸并沿与所述第一方向和所述第二方向正交的第三方向彼此间隔开的裂缝;
将压缩和缩回循环力沿所述第三方向施加到所述晶片以使来自相应的隐蔽损坏区域的所述裂缝扩散并接合在一起;
沿所述第一方向和所述第二方向展开所述晶片以从所述晶片分离各个管芯;
将所述各个管芯中的一个管芯连接到管芯附接焊盘或封装衬底;
将所述各个管芯中的所述一个管芯的端子电连接到电路或导电引线;以及
将所述各个管芯中的所述一个管芯包封在封装结构中。
9.根据权利要求8所述的方法,其中将所述压缩和缩回循环力施加到所述晶片包括在流体浴中将超声循环力施加到所述晶片。
10.根据权利要求9所述的方法,其中以90kHz或更低的频率施加所述超声循环力。
11.根据权利要求8所述的方法,其中将所述压缩和缩回循环力施加到所述晶片包括将超声循环力施加到支撑所述晶片的晶片卡盘台。
12.根据权利要求8所述的方法,其中将所述压缩和缩回循环力施加到所述晶片包括:
在柔性框架中的带载体上支撑所述晶片;
用环形晶片台支撑所述柔性框架,其中所述晶片与所述晶片台没有物理接触;以及
将超声循环力施加到所述晶片台。
13.根据权利要求8所述的方法,其中施加所述激光脉冲包括针对第一道次和第二道次中的每一个进行以下操作:
设置激光焦点以使激光束聚焦在目标深度处;
设置激光功率以在所述晶片中的所述目标深度处产生所述隐蔽损坏区域,并且产生所述裂缝,所述裂缝在所述晶片中从所述隐蔽损坏区域延伸,而不扩散到所述晶片中的其他裂缝;以及
操作激光器和位置控制器以将激光脉冲沿分离路径施加到所述晶片的所述侧面。
14.根据权利要求8所述的方法,其中展开所述晶片包括:
将所述晶片支撑在载体带上;以及
沿所述第一方向和所述第二方向拉伸所述载体带以从所述晶片分离各个管芯。
15.一种系统,其包括:
激光锯工具,其被配置为在晶片的正交的第一方向和第二方向的平面中将激光脉冲施加到侧面,以在所述晶片中的相应第一深度和第二深度处产生第一隐蔽损坏区域和第二隐蔽损坏区域,并且产生在所述晶片中从相应的隐蔽损坏区域延伸并沿与所述第一方向和所述第二方向正交的第三方向彼此间隔开的裂缝;
振动工具,其被配置为将压缩和缩回循环力沿所述第三方向施加到所述晶片以使来自相应隐蔽损坏区域的所述裂缝扩散并接合在一起;以及
晶片展开器工具,其被配置为沿所述第一方向和所述第二方向展开所述晶片以从所述晶片分离各个管芯。
16.根据权利要求15所述的系统,其中所述振动工具被配置为在流体浴中将超声循环力施加到所述晶片。
17.根据权利要求15所述的系统,其中所述振动工具被配置为将超声循环力施加到支撑所述晶片的晶片卡盘台。
18.根据权利要求15所述的系统,其中所述振动工具被配置为:
在柔性框架中的带载体上支撑所述晶片;
用环形晶片台支撑所述柔性框架,其中所述晶片与所述晶片台没有物理接触;以及
将超声循环力施加到所述晶片台。
19.根据权利要求15所述的系统,其中所述激光锯工具被配置为操作激光器和位置控制器以在激光功率和焦点设置下沿分离路径将激光脉冲施加到所述晶片的所述侧面,以在所述晶片中的所述目标深度处产生所述隐蔽损坏区域并且产生所述裂缝,所述裂缝在所述晶片中从所述隐蔽损坏区域延伸,而不扩散到所述晶片中的其他裂缝。
20.根据权利要求15所述的系统,其中所述晶片展开器工具被配置为在载体带上支撑所述晶片并沿所述第一方向和所述第二方向拉伸所述载体带以从所述晶片分离各个管芯。
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