CN116324001A - Low-temperature solder, method for manufacturing low-temperature solder, and low-temperature solder coated wire - Google Patents
Low-temperature solder, method for manufacturing low-temperature solder, and low-temperature solder coated wire Download PDFInfo
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- CN116324001A CN116324001A CN202180066720.6A CN202180066720A CN116324001A CN 116324001 A CN116324001 A CN 116324001A CN 202180066720 A CN202180066720 A CN 202180066720A CN 116324001 A CN116324001 A CN 116324001A
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- temperature solder
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 238000000034 method Methods 0.000 title claims abstract description 8
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- 229910052738 indium Inorganic materials 0.000 claims abstract description 16
- 229920005989 resin Polymers 0.000 claims abstract description 14
- 239000011347 resin Substances 0.000 claims abstract description 14
- 229910052718 tin Inorganic materials 0.000 claims abstract description 12
- 238000005275 alloying Methods 0.000 claims abstract description 11
- 238000002156 mixing Methods 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims description 37
- 238000005476 soldering Methods 0.000 claims description 35
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 239000004973 liquid crystal related substance Substances 0.000 claims description 5
- 239000000155 melt Substances 0.000 claims description 5
- 229920002678 cellulose Polymers 0.000 claims description 4
- 239000001913 cellulose Substances 0.000 claims description 4
- 229910020830 Sn-Bi Inorganic materials 0.000 claims description 3
- 229910018728 Sn—Bi Inorganic materials 0.000 claims description 3
- 229910018956 Sn—In Inorganic materials 0.000 claims description 3
- 229910010272 inorganic material Inorganic materials 0.000 claims description 3
- 239000011147 inorganic material Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 239000000919 ceramic Substances 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 238000010304 firing Methods 0.000 claims description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims 2
- 229920000049 Carbon (fiber) Polymers 0.000 claims 1
- 229910018978 Sn—In—Bi Inorganic materials 0.000 claims 1
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- 229910001220 stainless steel Inorganic materials 0.000 claims 1
- 239000010935 stainless steel Substances 0.000 claims 1
- 239000002023 wood Substances 0.000 claims 1
- 238000003466 welding Methods 0.000 description 41
- 239000011888 foil Substances 0.000 description 21
- 229920000139 polyethylene terephthalate Polymers 0.000 description 15
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- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 3
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- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
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- 238000010409 ironing Methods 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/06—Soldering, e.g. brazing, or unsoldering making use of vibrations, e.g. supersonic vibrations
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/02—Making non-ferrous alloys by melting
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C12/00—Alloys based on antimony or bismuth
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C13/00—Alloys based on tin
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C28/00—Alloys based on a metal not provided for in groups C22C5/00 - C22C27/00
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C30/00—Alloys containing less than 50% by weight of each constituent
- C22C30/04—Alloys containing less than 50% by weight of each constituent containing tin or lead
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
Abstract
The invention relates to a low-temperature solder, a method for manufacturing the low-temperature solder, and a low-temperature solder coated lead, and aims to provide a low-temperature solder which is formed by mixing, melting and alloying one or more of Al, P, sb, in and the like In the low-temperature solder formed by Sn and Bi, or Bi and In and the like, and can be welded on an electrode (aluminum, copper and the like) on a resin film and has low cost. The low-temperature solder of the present invention is obtained by mixing and melting/alloying a base material composed of at least one of Al, P, sb, in (excluding the case where In is contained In the base material) and a base material which is an alloy of Sn and Bi, in, or Bi and In, in a total amount of at most 3wt%, preferably 1.0 to 1.5wt% and 0.01wt% or more, to enhance the adhesion.
Description
Technical Field
The present invention relates to a low-temperature solder used for a resin film used for a solar cell substrate, a liquid crystal substrate, and the like, a method for manufacturing the low-temperature solder, and a low-temperature solder-coated wire.
Background
Conventionally, lead wires for electrodes such as solar cell substrates and liquid crystal substrates are often soldered to each other by using tin-lead solder for reasons such as high strength and low cost.
In addition, in the case of an electrode such as aluminum, since sufficient soldering strength cannot be obtained, silver paste is applied and sintered, and a wire is soldered with tin-lead solder thereon.
In addition, recently, from the viewpoint of contamination and the like, demand for lead-free solders is increasing.
Further, there is a demand for forming a solar cell on a resin film such as PET having flexibility and soldering a lead wire to an electrode (aluminum electrode, copper electrode, or the like) of the solar cell at low temperature.
Disclosure of Invention
[ problem to be solved by the invention ]
The conventional lead-free solder has a problem that the strength is slightly lower than the required strength and the cost is high compared with the tin-lead solder, so that the conventional lead-free solder cannot replace the tin-lead solder.
In addition, in a solar cell or the like formed on a resin film, a problem of an excessively high soldering temperature occurs.
[ means for solving the problems ]
The present inventors have found that one or more of Al, P, sb, in (excluding the case where the base material contains In) and the like is added up to 3wt% to a low-temperature solder composed of Sn and Bi, in, or an alloy of Bi and In, which is one of lead-free solders. A low-temperature solder, which is obtained by mixing and melting/alloying a trace amount of 1wt% to 1.5wt% or less; the low-temperature solder can be extremely firmly soldered to an electrode (aluminum, copper, etc.) of a resin film or the like.
Therefore, in the low-temperature solder comprising an alloy of Sn and Bi, in or Bi and In, the present invention or the like mixes and melts/alloys a base material comprising at most one of Al, P, sb, in (excluding the case of containing In the base material) with at most 3wt%, preferably 1.0 to 1.5wt%, and 0.01wt% or more of the base material, which is an alloy of Sn and Bi, in or Bi and In, to enhance the adhesion.
At this time, the melting temperature of the low-temperature solder after melting/alloying is the same as or lower than the melting temperature of the base material.
In addition, a subsidiary material composed of an alloy containing one or more of Al, P, sb, in is mixed into the base material as needed, and melted and alloyed.
In addition, an alloy of Cu and P is used as an alloy of the subsidiary material.
The base material is mixed with Al, cuP, and In as necessary, which are the main materials, in an amount of at most 3wt%, preferably at most 1.0 to 1.5wt%, and at most 0.1wt%, and melted/alloyed.
The base material, the main material, and the auxiliary material are mixed together or divided into a plurality of times, and melted and alloyed.
Further, the electrode is used for soldering a wire to a solar cell substrate or a liquid crystal substrate (resin film).
The low-temperature solder is applied to the surface of the wire or the tape by melting.
In addition, the melt coating is performed in a state where ultrasonic waves are applied.
[ Effect of the invention ]
As described above, the present invention provides a low-temperature solder In which one or more of Al, P, sb, in (excluding the case where the base material contains In) and the like is added up to 3wt% to the low-temperature solder composed of Sn and Bi, in, or an alloy of Bi and In. Trace amounts of 1wt% to 1.5wt% or less are more preferably mixed and melted/alloyed; the low-temperature solder can be extremely firmly soldered to an electrode (aluminum, copper, etc.) such as a resin film, and particularly, sn and Bi low-temperature solders can be produced at extremely low cost.
In addition, the melting temperature of the low-temperature solder after melting/alloying is the same as or lower than the melting temperature of the base material, and the rise in melting temperature due to mixing can be eliminated.
Further, by mixing, melting, and alloying one or more of Al, P, sb, in (except In the case of containing In the base material) and the like to produce a low-temperature solder, the adhesion strength to the object to be soldered can be greatly enhanced.
Detailed Description
Example 1
Fig. 1 shows a diagram illustrating the production of a low-temperature solder according to the present invention.
Part (a) of fig. 1 shows a flowchart, and part (b) of fig. 1 shows a material example.
In fig. 1 (a), S1 is a preparation base material or a master material. This means the following materials shown in the material example for preparing part (b) of fig. 1.
Base material: sn42 Bi58
Main material: al, guP, in
The base material is a basic material (base material) of an alloy for forming the low-temperature solder of the present invention, and examples thereof include: 42wt% of Sn. Bi58wt% (melting temperature 139 ℃) was used as one. The weight ratio of Sn to Bi may be any range that can be alloyed, and for example, bi may be 3 to 58wt% and the balance Sn. The ratio may be appropriately selected so as to be a desired value by conducting experiments with a melting temperature (the temperature is lower as Bi is more, and the melting temperature is 139 ℃ when Bi is 58 wt%) or the like. The proportions of the low-temperature solder, the Sn-In system, and the Sn-Bi-In system may be appropriately selected as described In FIG. 5 and the description thereof.
In addition, the main material is to remove an oxide film on the surface of the object to be welded during welding, and to cause adhesion to the welding. In the present invention, the total amount of the main material is at most 3wt% and preferably 1 to 1.5wt% and 0.01wt% or more. Here, a material to be welded is obtained by mixing and melting/alloying one or more of Al (adhesiveness to the object to be welded), P (or CuP, oxide film to be welded removed, adhesiveness), in (wettability, fluidity), and Sb (adhesiveness). The total amount of the main material is preferably a trace amount of not less than 3wt%, more preferably not less than 1 to 1.5wt% and not less than 0.01wt%, and the melting temperature of the low-temperature solder after the base material and the main material are mixed and melted/alloyed is the same as the melting temperature of the base material or slightly lower than the melting temperature of the base material (for example, lower by about 1 to 3 ℃). This is presumed to be because a trace amount of not more than 3wt%, more preferably not more than 1 to 1.5wt%, relative to the total amount of the main material of the base material is introduced into the skeleton of the base material, thereby reconstructing the skeleton.
S2, mixing the main materials with the base materials. This is a master material mixture for the base material prepared in S1.
S3, melting and alloying the base material and the main material. In S2, the base material is mixed with the main material, heated and melted, and well stirred to alloy the main material. In this case, when the main material is oxidized by oxygen in the air and is difficult to alloy, an inert gas (for example, nitrogen gas) is blown into the crucible as needed, or a melting furnace or a vacuum melting furnace filled with an inert gas is further used.
S4, finishing the low-temperature solder material.
According to the above, the base material and the main material are prepared and mixed and melted and alloyed, whereby the low-temperature solder (sn—bi, sn—in, sn—bi—in low-temperature solder) of the present invention can be produced. The following will be described in detail in order.
Fig. 2 is an explanatory view of the apparatus for producing a low-temperature solder material according to the present invention.
In fig. 2, the solder material 1 is a base material or a main material prepared in S1 of fig. 1, and is in this case metal chips (coarsely pulverized).
The solder material charging tray 2 carries the solder material 1 and charges it into the melting furnace 3.
The melting furnace 3 is used to heat by a heater 4 or the like, and to charge the solder material 1 therein, to melt, stir, and alloy the base material and the main material. The melting furnace 3 usually melts, agitates and alloys the base material and the main material charged into the melting furnace in the atmosphere. At this time, an inert gas (nitrogen or the like) is blown in as needed to reduce oxidation by oxygen in the air, and further, sealing is performed as needed to fill with the inert gas (or vacuum-evacuation).
In the above manner, the base material and the base material prepared In S1 of fig. 1 are mixed and melted In the melting furnace 3, and stirred and alloyed, whereby the low-temperature solder (sn—bi, sn—in, sn—bi—in low-temperature solder) of the present invention can be produced.
Fig. 3 is an explanatory diagram of soldering of a wire according to the present invention.
Part (a) of fig. 3 shows a flowchart, and part (b) of fig. 3 shows an example of a substrate/wire.
In fig. 3 (a), S11 pre-welds the low-temperature solder pattern to the substrate with ultrasonic waves. In this case, for example, a low-temperature solder (low-temperature solder manufactured in S4 of fig. 1) according to the present invention is supplied to the tip of a horn of an ultrasonic horn at a predetermined portion (pattern) to be soldered on a substrate (PET plate, etc.) of a solar cell, melted, and ultrasonic waves are applied to solder the pattern portion on the substrate in advance (so-called ultrasonic pre-soldering).
S12 is to weld the wire with or without ultrasonic wave. In S11, for example, the wire is attached to an ultrasonic pre-welded portion (pattern) on an electrode (for example, aluminum foil) of a substrate (PET plate) of a solar cell, and then ultrasonic is applied thereto, or ultrasonic is not applied thereto, and the low-temperature solder of the present invention is melted to weld the wire. In addition, when the low-temperature solder is pre-soldered to the wire in advance, the solder does not need to be supplied.
According to the above, the low-temperature solder of the present invention is pre-soldered (S11) by using ultrasonic waves at the portion to be soldered (for example, the electrode portion (aluminum portion) of the substrate (PET plate) of the solar cell), and the wire is subjected to ultrasonic soldering or non-ultrasonic soldering (S12) by using the low-temperature solder of the present invention at the portion (pattern) subjected to the pre-soldering, whereby the electrode portion (aluminum foil portion) of the substrate of the solar cell, which has not been conventionally soldered, and the wire can be subjected to ultrasonic soldering or non-ultrasonic soldering thereon.
The ultrasonic welding is performed at 10W or less, and usually about 1 to 3W. If the strength is too high, the film (for example, nitride film) formed on the substrate of the solar cell and the crystal on the surface of the substrate are damaged, and therefore, the strength is not preferable.
Part (b) of fig. 3 shows a substrate/lead example.
In fig. 3 (b), the substrate is a heat-resistant resin substrate (for example, a flexible resin substrate having a thickness of about 0.1 mm) such as PET, and it is extremely difficult to perform normal soldering. The low-temperature solder having adhesion according to the present invention is subjected to ultrasonic pre-soldering for portions (patterns) of electrodes (aluminum electrodes, copper electrodes, etc.) to be formed on these substrates. Then, the wire is ultrasonically or non-ultrasonically welded to the pre-welded portion (pattern), whereby the wire can be welded to the substrate (aluminum electrode, copper electrode).
The lead is a lead in which electrode portions (patterns) on a substrate are soldered using the low-temperature solder with adhesion of the present invention, and is a lead in which the low-temperature solder of the present invention is previously plated (ultrasonic solder plated) on a wire [ the low-temperature solder of the present invention is plated (ultrasonic solder plated) on a circular copper wire, and if the wire is slightly elliptical, the bonding is easy, a tape (a tape in which a copper thin plate is cut to about Cheng Kuandu mm) or the like.
Fig. 4 is an explanatory view of the soldering of the present invention.
Part (a) of fig. 4 shows a pre-welded example, and part (b) of fig. 4 shows a welded example of the tape body or wire.
In fig. 4 (a), a substrate (for example, a PET plate, 0.1 mmt) 11 is an example of a solar cell substrate, and the substrate 11 has an aluminum film (foil) 12 formed on the entire rear surface.
The aluminum film (foil) 12 is an electrode (aluminum electrode) in which an aluminum foil (film) is formed (next, vapor deposition, etc.) on the entire rear surface of a substrate (PET plate) 11, which is a substrate of a solar cell.
The low-temperature solder 14 is the low-temperature solder of the present invention (the low-temperature solder manufactured in S4 of fig. 1).
Next, a welding operation is described.
(1) The substrate 11 is transported to a preheating stage, vacuum-adsorbed and fixed, and preheated (for example, to about 130 ℃).
(2) From the start point to the end point of an electrode pattern (short-tab pattern) formed on an aluminum film (foil) 12, a low-temperature solder 14 is automatically supplied and melted at an ultrasonic horn tip 13 as shown, and ultrasonic waves are applied to move the ultrasonic horn tip 13 at a constant speed in a state where the degree of friction is not close to that on the aluminum film (foil) 12, thereby forming a short-tab pre-solder pattern on the aluminum film (foil) 12.
In this way, the low-temperature solder 14 according to the present invention can be soldered to the aluminum film (foil) 12 in a predetermined pattern.
Part (b) of fig. 4 shows an example of soldering of the tape body or wire.
In fig. 4 (b), the ultrasonic horn tip 13-1 applies ultrasonic waves from an ultrasonic generator not shown in the drawing, or does not apply ultrasonic waves.
The ribbon or wire 15 of the low temperature solder is pre-soldered to the ribbon or wire. The wire 15 is excellent in weldability by being deformed slightly into an elliptical shape.
Next, a welding operation of the band or the pair of pre-welded pattern portions will be described.
(1) The substrate 11 is preheated in the same manner as in fig. 4 (a).
(2) The soldering tape or wire 15 disposed along the pre-solder pattern portion of the aluminum film (foil) 12 formed on the substrate 11 (back surface) is gently pressed from above by the ultrasonic or non-ultrasonic horn tip 13-1, and moved to the right in the drawing at a constant speed, and the solder of the soldering tape or wire 15 is melted and soldered to the pre-solder pattern portion.
By the above operation, the ribbon or wire 15, which is preliminarily soldered with the low-temperature solder 14 of the present invention, can be soldered to the portion of the pre-solder pattern on the aluminum film (foil) 12.
Further, the quality of the ultrasonic welding or the ultrasonic welding according to the present invention is determined as follows: the tape or wire is subjected to ultrasonic welding or ultrasonic-free welding at the portion to be welded, and the tape or wire is stretched with a force slightly weaker than the force (bending force, about 2 to 5 Kg) that would break the substrate or the like, and the tape or wire is judged to be good when it is not peeled from the substrate or the like, and is judged to be bad when peeled.
Fig. 5 shows a composition example of the low-temperature solder of the present invention.
In fig. 5, the base material and the main material are different from each other as described with reference to fig. 1.
Composition examples are composition examples of a base material and a main material.
The wt% is an example of the composition of the base material and the main material.
The wt% range is an example of the range of wt% of the composition of the base material and the main material.
As shown in FIG. 5, the composition, wt% examples, and wt% ranges are as follows.
In this example, the base material of the prototype was composed of 42wt% Sn and 58wt% Bi. The composition range may be a range In which a low-temperature solder alloy (Sn-Bi, sn-In, sn-Bi-In solder alloy) can be produced and stable, and for example, the Sn-Bi solder alloy may be 3 to 58wt% Bi and the balance Sn, and the melting temperature of the produced low-temperature solder alloy (base material) may be appropriately selected from the group consisting of actual measurement and experiment.
Examples of the main material include Al, P (or CuP 8), in, bi, sb, etc., but P uses an alloy of P (red phosphorus) and CuP8 (an alloy of 8wt% P and the balance Cu, and wt% of P is copper phosphide which is 8% of CuP 8) In the prototype. In the case of P, saturation is at about 0.1wt% (or about p=0.16 wt% in the case of CuP 8), and the tackiness increases greatly if further added. Therefore, for general purposes such as securing fluidity and wettability, it is desirable to add P below saturation [ the amount of P added may be about 1 minute (more preferably about 0.1wt% to 0.01 wt%) as compared to other materials ]. Similarly, since other main materials tend to be the same, the optimum amount to be added can be determined experimentally according to the need.
The total amount of the main material is preferably at most 3wt%, more preferably 1 to 1.5wt%, and not less than 0.1 wt%. When the amount of the main material is set within this range, the melting temperature is substantially the same as or slightly lower than the melting temperature of the base material.
Fig. 6 shows a prototype of the low-temperature solder of the present invention. The diagram shows an example of the welding that can be used in fig. 4 after a number of trials. The non-use is omitted.
In fig. 6, the following 4 kinds of base materials are used as the base materials of the low-temperature solder (the low-temperature solder manufactured in S4 of fig. 1) of the present invention.
Sn52/In48 (melting point: 120 ℃ C.)
Sn42/Bi58 (melting point: 139 ℃ C.)
Sn48/Bi52 (melting Point:)
Sn40/In40/Bi20 (melting point: 90 ℃ C.)
The main material is a metal material of Al, cuP8, in (each 0.5 wt%). CuP8 uses copper phosphide with 8wt% P and the balance Cu.
Sample No is the number of the prototype sample.
For the above prototype samples, only the samples obtained by performing ultrasonic welding or ultrasonic welding-free welding in fig. 5 are described as good samples. Samples that could not be welded were omitted. The results are shown in FIG. 7.
Fig. 7 shows an example of soldering of the low-temperature solder of the present invention. The ultrasonic waves in fig. 7 are distinguished by ultrasonic welding or ultrasonic-free welding.
The soldering target was a material of the target to be soldered using the sample of the low temperature solder of fig. 7 of the present invention, which is different from Ai board (0.1 mmt), cu wire (0.3 to 0.4 mmphi)/ribbon (100 μmt, 50 μmt, 30 μmt), si wafer (0.2 mmt).
The excellent property indicates that the low-temperature solder of the present invention is excellent in adhesion to the object to be soldered [ a slightly weaker force (tensile strength of about 1 to 5 kg) than the force at which the Si wafer breaks when the tin-plated wire of 0.4mm phi is soldered and stretched ].
Delta indicates that the adhesion of the low-temperature solder of the present invention to the object to be soldered is weak (a state in which the solder can be peeled off by applying a slight force when a tin-plated wire of 0.4mm phi is soldered and stretched).
From the above experiments in fig. 7, it was found that in the case of "ultrasonic waves", sufficient bonding strength was obtained for Al plates, cu wires/strips, and Si wafers.
In addition, in the case of "no ultrasonic wave", stretching causes peeling. When cleaning the surface of the object to be welded, a relatively strong adhesion force may be obtained, or a strong adhesion force may not be obtained, and the object may be unstable.
Fig. 8 shows a soldering example (metal-metal) of the low-temperature solder of the present invention.
Fig. 8 (a) shows a welding example. Wherein the solder conditions are as shown.
Melting point of solder: about 138 DEG C
Highest temperature of the process: 180 ℃ below
The low-temperature solder used was prepared by adding 0.5wt% al, cuP, and In to 42wt% Sn and 58wt% Bi, respectively (the following description will be given with reference to examples using the low-temperature solder In fig. 8 to 13). The same applies to other Sn-In alloys and low-temperature solders of SN-Bi alloys.
In fig. 8 (a), a Co-PET adhesive is used for the PET paste film, and the sheet material with the aluminum foil adhered thereto is cut to the size shown in the figure. Then, as shown in the drawing, the aluminum foil is partially overlapped on the upper and lower surfaces, and the low-temperature solder (sn—bi low-temperature solder) of the present invention is soldered to the overlapped portion.
As for the welding method, for example, portions of the aluminum foil on the upper side and the lower side are pre-welded with low-temperature solder. In addition, if welding (ultrasonic welding) to which ultrasonic waves are applied is performed, welding can be performed reliably.
Then, the pre-welded portion of the pre-welded upper aluminum foil and the pre-welded portion of the lower aluminum foil are overlapped in the manner shown in the drawings, and the whole is pressed from above with the tip of the horn, and the low-temperature solder is melted and welded. In this case, the ultrasonic welding can be performed with certainty.
In the manner described above, as shown in part (a) of fig. 8, aluminum foils that are then on the PET paste film surface may be subjected to low-temperature welding with each other. Although ultrasonic-free welding is also possible, it is desirable to perform ultrasonic welding with certainty.
Fig. 8 (b) shows an example of a welding photograph. These photographs show examples of ultrasonic low-temperature welding in which an elongated aluminum foil is placed laterally on a PET surface, and only a "welded portion" shown in the center portion thereof is subjected to ultrasonic low-temperature welding. In the illustrated "welded portion", the aluminum foil is firmly welded to the PET surface.
Next, an example of the PET film lamination of fig. 8 will be described in detail with reference to fig. 9.
Fig. 9 shows an example of lamination of a PET film of the present invention.
Fig. 9 (a) shows a flowchart, and fig. 9 (b) shows an explanatory diagram of the flowchart.
In part (a) of fig. 9, S21 fixes the film to the sponge. As shown in (b-1) on the right side, the film (for example, PET film) is fixed (for example, by a heat-resistant polyimide tape coated with an adhesive) to a heat-resistant sponge.
S22 is to attach a large amount of solder to the front end of the soldering tip. As shown in (b-2) on the right side, a large amount of the low temperature solder of the present invention was attached to the soldering tip.
S23, welding is performed by ultrasonic waves so that the tip of the horn does not contact the film.
S24, turning over one film and overlapping the welding surface of the other film. This is performed so that the pre-welded film surfaces overlap as shown in the right side (b-3).
S25, cutting the copper plate into welding area size. S26, pressing the copper plate by ironing the front end of the welding head, and S27 confirming that the melted solder overflows from the end part, thereby completing the process. As shown in (b-4) on the right side, these S26 and S27 are pressed from a copper plate having good thermal conductivity by the tip of the bonding tool (ultrasonic waves), and the low-temperature solder, which is a pre-welded joint surface, melts and overflows from the tip. Accordingly, when the tip of the horn is directly abutted against the film, the film is not melted, softened, shrunk, or the like, and ultrasonic low-temperature welding can be applied smoothly as if it were ironed.
Fig. 9 (c) shows an example of welding conditions. The part (c) shows an example of the welding conditions in the part (a) and the part (b) of fig. 9. The following conditions were set here.
Welding head front end temperature: 175 ℃ +/-5 DEG C
Voltage regulator (Slidac) set point: 14
Pad material: PORON sponge
Ultrasonic output: 10W
Part (d) of fig. 9 shows a cross-sectional view of the weld. This shows a schematic cross-sectional view in the case where an aluminum foil (Al) (pre-welded by ultrasonic) bonded to the PET surface via a polyimide tape is substituted for the copper plate in part (a) of fig. 9, and ultrasonic low-temperature welding is performed to each other. In this case, if the polyimide tape coated with the adhesive material is attached so as to surround only the soldered portion, the soldering at a low temperature can be prevented from being performed on an unnecessary portion.
Fig. 10 shows an experimental example of a pad of the low-temperature solder of the present invention. This shows an example of welding with or without ultrasonic waves under the conditions shown in fig. 8 and 9. In the low-temperature welding of the present application, the following results are obtained, for example.
It was determined that even for the cellulose/resin material described above, soldering (ultrasonic soldering, preheating (a temperature lower than the melting temperature by about 10 degrees) and soldering can be performed as needed) can be performed with the low-temperature solder of the present invention.
Part (b) of fig. 10 shows a photographic example of the mat of part (a) of fig. 10.
Fig. 11 shows an example of the bonding test result of the low-temperature solder of the present invention. The experimental results are shown below.
1: whether or not to engage: the adhesion force of 300g or more with the 0.2mm phi wire bonded was determined to be good.
X 2: US is not shown to be ultrasound-free and may be sealed
And 3:29 PET is candidate No.1 for perovskite.
The metals (1 silver, 2 copper, 3 aluminum, etc.) shown in the diagram of fig. 11 can be soldered at low temperature with or without ultrasonic waves.
The inorganic material [7 alumina, 8 barium titanate, 10 silicon carbide, 11 silicon nitride, 12 fluorite, 13 quartz, 14 ceramic (pottery), etc. ] formed by firing the oxide shown in the diagram of fig. 11 can be welded at low temperature with or without ultrasonic waves.
The cellulose/resin type (16 polyethylene, 17 polypropylene, …, 29PET, etc.) shown in the diagram of fig. 11 can be welded at low temperature by ultrasonic waves. In addition, the 4-block, 6-cork board and the like shown in fig. 10 can be ultrasonically welded.
Fig. 12 shows an experimental example of an ultrasonic-wave output mat (without preheating) according to the present invention. Part (a) of fig. 12 shows an example of experimental conditions. Among them, experiments were performed under the following experimental conditions.
Welding head front end: 180+ -5 DEG C
Voltage regulator (Slidac) set point (V): 14
Supbonder display temperature (°c): 180+ -5
Pad material: PORON sponge
Fig. 12 (b) shows an example of the experimental result of ultrasonic output. The term "horizontal" means the following.
Ultrasonic output (W) means that ultrasonic power W is applied to the tip of the horn.
Solderability means workability, a good degree of solder adhesion, and the like.
The adhesion at bending was determined by peeling at film bending.
Film effect indicates the form of damage caused when the horn is in contact.
When the ultrasonic output (W) in the above was changed to 1, 2, 3, … to 10 and experiments were performed for the other 3 items, the experimental results shown in part (b) of fig. 12 were obtained. From the experimental results, it was found that good results (ultrasonic welding results) were obtained for these 3 items when the ultrasonic output was about 7W or more (more preferably about 10W).
Fig. 13 shows a temperature cycle test example of the low-temperature solder of the present invention. This shows intermediate results of temperature cycling test 337.8 hours. At the time point of the intermediate result, no change in adhesion between the time of the start of the experiment and the time of the intermediate result was confirmed, both in the ultrasonic welding and in the ultrasonic-free welding.
Drawings
Fig. 1 is a diagram illustrating the production of the low-temperature solder of the present invention.
Fig. 2 is an explanatory view of an apparatus for producing a low-temperature solder material according to the present invention.
Fig. 3 is an explanatory diagram of soldering of a wire according to the present invention.
Fig. 4 is an explanatory view of the soldering of the present invention.
Fig. 5 shows a composition example of the low-temperature solder of the present invention.
Fig. 6 shows a prototype (prototype) example of the low-temperature solder of the present invention.
Fig. 7 shows an example of soldering of the low-temperature solder of the present invention.
Fig. 8 shows a soldering example (metal-metal) of the low-temperature solder of the present invention.
Fig. 9 shows an example of lamination of a PET film of the present invention.
Fig. 10 shows an experimental example of a pad of the low-temperature solder of the present invention.
Fig. 11 shows an example of the bonding test result of the low-temperature solder of the present invention.
Fig. 12 shows an experimental example of an ultrasonic-wave output mat (without preheating) according to the present invention.
Fig. 13 shows a temperature cycle test example of the low-temperature solder of the present invention.
Description of the reference numerals
1. Solder material
2. Solder material input tray
3. Melting furnace
4. Heater
11. Substrate (for example, PET plate 0.1 mmt)
12. Aluminium film (foil)
13,13-1 ultrasonic horn front end
14. Low temperature solder
15. A low temperature welded tape or wire.
Claims (20)
1. In a low-temperature solder comprising Sn, bi or In, or an alloy of Bi and In, a base material comprising at least one or more of Sn, bi or In, or an alloy of Bi and In, is mixed with a base material comprising at most 3wt%, preferably 1.0 to 1.5wt%, and 0.01wt% or more of a main material comprising Al, P, sb, in (excluding the case of containing In the base material), and is melted/alloyed to enhance the adhesion force.
2. The low-temperature solder according to claim 1, wherein the melting temperature of the molten/alloyed low-temperature solder is equal to or lower than the melting temperature of the base material.
3. The low-temperature solder according to claim 1 or 2, wherein a sub-material composed of an alloy containing one or more of Al, P, sb, in is mixed into the base material as needed, and melted/alloyed.
4. The low-temperature solder according to claim 3, which uses an alloy of Cu and P as the alloy of the aforementioned auxiliary material.
5. The low-temperature solder according to any one of claims 1 to 4, wherein Al, cuP, and In, which are the main materials, are mixed and melted/alloyed In the base material In an amount of at most 3wt%, more preferably 1.0 to 1.5wt%, and 0.1wt% or more In total.
6. The low-temperature solder according to any one of claims 1 to 5, wherein the base material, the main material, and the sub-material are mixed together or divided into a plurality of times, and melted/alloyed.
7. The low temperature solder according to any one of claims 1 to 6, which is used for soldering a wire to an electrode of a solar cell substrate, a liquid crystal substrate.
8. The low-temperature solder according to claim 1, wherein the metal to be soldered is alloyed, the inorganic material formed by firing the oxide is sintered, and the cellulose/resin material is solidified and fixed in the gaps where the surface irregularities are formed, so that the adhesion force of at least one of the above is enhanced.
9. The low-temperature solder according to claim 8, wherein the metal is at least aluminum, copper, iron, stainless steel, or silicon oxide, the inorganic material is at least glass or ceramic, and the cellulose/resin is at least paper, wood, a resin film, a resin fiber, or a carbon fiber.
10. The low-temperature solder according to any one of claims 8 to 9, wherein, in order to enhance the adhesion force by performing the melting/alloying, soldering is performed at least at 139 ℃ In the Sn-Bi alloy, at least at 120 ℃ In the Sn-In alloy, and at 90 ℃ In the Sn-In-Bi alloy, up to a temperature of 10 ℃ or higher than each temperature, to enhance the adhesion force.
11. The low temperature solder of any of claims 8 to 10, wherein the soldering is ultrasonic soldering.
12. A low-temperature solder-coated wire, comprising a wire rod or a ribbon, the low-temperature solder according to claim 1 to 7 being applied on the surface of the wire rod or ribbon by melting.
13. The low-temperature solder-coated wire according to claim 12, wherein the melt coating is performed in a state where ultrasonic waves are applied.
14. A method for producing a low-temperature solder, which comprises a step of enhancing adhesion by using Sn, bi or In, or an alloy of Bi and In, and which comprises:
a step of mixing a base material of an alloy of Sn, bi or In, or Bi and In with a base material of at least one of Al, P, sb, in (excluding the case of In contained In the base material) to a total of at most 3wt%, preferably at most 1.0 to 1.5wt%, and at least 0.01 wt%; and
and melting and alloying the mixed materials.
15. The method for producing a low-temperature solder according to claim 14, wherein a melting temperature of the low-temperature solder after melting/alloying is equal to or lower than a melting temperature of the base material.
16. The method for producing a low-temperature solder according to claim 14 or 15, wherein a secondary material composed of an alloy containing one or more of Al, P, sb, in is mixed into the base material as required, and melted and alloyed.
17. The method for producing a low-temperature solder according to claim 16, wherein an alloy of Cu and P is used as the alloy of the auxiliary material.
18. The method for producing a low-temperature solder according to any one of claims 14 to 17, wherein Al, cuP, and In, as the main material, are mixed and melted/alloyed In the base material In a total amount of at most 3wt%, more preferably at most 1.0 to 1.5wt%, and at most 0.1 wt%.
19. The method for producing a low-temperature solder according to any one of claims 10 to 14, wherein the base material, the main material, and the sub-material are mixed together or divided into a plurality of times and melted/alloyed.
20. The method for manufacturing a low-temperature solder according to any one of claims 14 to 18, which is used for soldering a wire to an electrode of a solar cell substrate, a liquid crystal substrate.
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| JP2020166977 | 2020-10-01 | ||
| JP2020-166977 | 2020-10-01 | ||
| JP2020-219193 | 2020-12-28 | ||
| JP2020219193 | 2020-12-28 | ||
| PCT/JP2021/033865 WO2022070910A1 (en) | 2020-10-01 | 2021-09-15 | Low-temperature solder, method for producing low-temperature solder, and low-temperature solder coated lead wire |
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| CN116324001A true CN116324001A (en) | 2023-06-23 |
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| CN202180066720.6A Pending CN116324001A (en) | 2020-10-01 | 2021-09-15 | Low-temperature solder, method for manufacturing low-temperature solder, and low-temperature solder coated wire |
Country Status (5)
| Country | Link |
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| JP (1) | JPWO2022070910A1 (en) |
| KR (1) | KR20230075504A (en) |
| CN (1) | CN116324001A (en) |
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| US11832386B2 (en) * | 2021-12-16 | 2023-11-28 | Dell Products L.P. | Solder composition for use in solder joints of printed circuit boards |
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| JP4135268B2 (en) * | 1998-09-04 | 2008-08-20 | 株式会社豊田中央研究所 | Lead-free solder alloy |
| JP5169871B2 (en) * | 2009-01-26 | 2013-03-27 | 富士通株式会社 | Solder, soldering method and semiconductor device |
| JP2013248664A (en) * | 2012-06-04 | 2013-12-12 | Nippon Genma:Kk | Lead-free solder alloy and solder paste |
| US20150037087A1 (en) * | 2013-08-05 | 2015-02-05 | Senju Metal Industry Co., Ltd. | Lead-Free Solder Alloy |
| JP2016026884A (en) * | 2014-07-02 | 2016-02-18 | 住友金属鉱山株式会社 | Bi-Sn-Al BASED SOLDER ALLOY FOR MEDIUM TO LOW TEMPERATURES AND SOLDER PASTE |
| CN106216872B (en) * | 2016-08-11 | 2019-03-12 | 北京康普锡威科技有限公司 | A kind of SnBiSb series low-temperature leadless solder and preparation method thereof |
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