CN116317980B - Low noise amplifier - Google Patents
Low noise amplifier Download PDFInfo
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- CN116317980B CN116317980B CN202310453819.2A CN202310453819A CN116317980B CN 116317980 B CN116317980 B CN 116317980B CN 202310453819 A CN202310453819 A CN 202310453819A CN 116317980 B CN116317980 B CN 116317980B
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- 239000003990 capacitor Substances 0.000 claims description 38
- 230000000903 blocking effect Effects 0.000 claims description 6
- 239000011230 binding agent Substances 0.000 claims 1
- 238000004891 communication Methods 0.000 abstract description 9
- 238000004377 microelectronic Methods 0.000 abstract description 2
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/34—Negative-feedback-circuit arrangements with or without positive feedback
- H03F1/342—Negative-feedback-circuit arrangements with or without positive feedback in field-effect transistor amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
Abstract
The invention relates to the technical fields of microelectronics, semiconductors and communication, and discloses a low-noise amplifier; the radio frequency signal enters from the radio frequency input port, after being amplified by the amplifying circuit, one part of the signal is output from the radio frequency output port, and the other part of the signal returns to the radio frequency input port through the biasing circuit; the amplifying circuit comprises a cascode amplifier; the bias circuit structure of the invention is different from the common active bias, the bias external choke coil is adopted to feed back to the input port, the structure mode can not only optimize noise, but also be flexible to apply, the amplifying circuit structure adopts the common source amplifier structure mode to compensate gain, the performance of the low noise amplifier is improved, and the performance of the whole system is further improved.
Description
Technical Field
The invention relates to the technical fields of microelectronics, semiconductors and communication, in particular to a low-noise amplifier.
Background
In a receiving module of a wireless communication system, a first active device receiving signals from an antenna is a low noise amplifier (LNA: low Noise Amplifier), which can amplify weak signals received from an external environment by the antenna on the one hand to demodulate required data information for the system; on the other hand, the noise interference of the system can be reduced, and the sensitivity of the whole machine is improved.
Nowadays, the requirements of various wireless communication tools are higher and higher, such as small power radiation, long acting distance, wide coverage range and the like, so that the higher requirements are put on the receiving sensitivity of the system; in some applications of radio frequency communication circuits, for example, the first stage radio frequency amplifying circuit of a receiver in a long-distance wireless communication system, since radio frequency signals are already very weak after long-distance transmission, noise of the amplifying circuit must be reduced as much as possible to improve signal to noise ratio, at this time, the main objective of designing the amplifying circuit is to reduce noise and obtain the minimum noise factor, in the design of the radio frequency amplifying circuit, obtaining the maximum power gain and the minimum noise factor is contradictory, so that the minimum noise factor needs to be obtained at the expense of the power gain, in the radio frequency communication circuit, along with the increase of communication distance and the wide application of the wireless communication system, many receiving systems need to process very weak radio frequency signals, and thus the noise factor is the most important index of low noise.
Disclosure of Invention
The invention mainly solves the technical problem of providing a low-noise amplifier which adopts a bias external choke coil to feed back to an input port, the structural mode can optimize noise and is flexible to apply, the amplifying circuit structure adopts a common source amplifier structure to compensate gain, the performance of the low-noise amplifier is improved, and the performance of the whole system is further improved.
In order to solve the technical problems, the invention adopts a technical scheme that: the low-noise amplifier comprises a radio frequency input port, an amplifying circuit, a bias circuit, a low-noise amplifier and a low-noise amplifier, wherein radio frequency signals enter from the radio frequency input port, a part of signals are output from the radio frequency output port after being amplified by the amplifying circuit, and the other part of signals return to the radio frequency input port through the bias circuit; the amplifying circuit includes a cascode amplifier.
As an improvement of the present invention, the bias circuit is an active bias circuit.
As a further improvement of the invention, a reverse diode is arranged in the active bias circuit.
As a further improvement of the invention, the active bias circuit adopts a mode of binding wires to chokes for grid bias.
As a further improvement of the present invention, the bias circuit includes a transistor M2, a reverse diode D1, and a resistor R2, wherein one end of the resistor R2 is connected to the drain of the transistor M2 and the gate of the transistor M2, respectively, the other end of the resistor R2 is connected to the external choke coil through a binding wire and fed back to the gate of the amplifying circuit, the gate of the transistor M2 is connected to the drain of the transistor M2, and the source of the transistor M2 is grounded.
As a further development of the invention, the amplifying circuit is connected to a feedback circuit comprising a capacitor C3 and a resistor R1 connected in series, the amplifying circuit comprising a transistor M1, the resistor R1 being connected to the drain of the transistor M1, the capacitor C3 being connected to the gate of the transistor M1.
As a further improvement of the invention, the amplifying circuit is connected with an RC parallel circuit, the RC parallel circuit comprises a resistor R3 and a capacitor C4, one end of the resistor R3 is connected with the drain electrode of the transistor M1, one end of the capacitor C4 is connected with the other end of the resistor R3, and the other end of the capacitor C4 is grounded.
As a further improvement of the invention, the capacitor C1 is connected to the radio frequency input port as a blocking capacitor, and the capacitor C2 is connected to the radio frequency output port as a blocking capacitor.
As a further improvement of the invention, the capacitor C2 is connected with one end of the inductor L1, the other end of the inductor L1 is connected with one end of the resistor R4, one end of the inductor L2 is connected with the other end of the resistor R4 and the resistor R2, the other end of the inductor L2 is connected with the capacitor C2, the inductor L1 is a choke coil of the radio frequency output port, and the inductor L2 is a choke coil of the feedback grid of the bias circuit.
The beneficial effects of the invention are as follows: compared with the prior art, the bias circuit structure is different from the common active bias, the bias external choke coil is adopted to feed back to the input port, the structure mode can optimize noise and is flexible to apply, the amplification circuit structure of the bias circuit structure adopts the common source amplifier structure to compensate gain, the performance of the low-noise amplifier is improved, and the performance of the whole system is further improved.
Drawings
FIG. 1 is a circuit block diagram of a low noise amplifier of the present invention;
FIG. 2 is a circuit diagram of a conventional active bias circuit;
FIG. 3 is a circuit diagram of an active bias circuit of the present invention;
FIG. 4 is a graph showing gain versus frequency for the present invention;
fig. 5 is a graph of noise figure as a function of frequency according to the present invention.
Detailed Description
The present invention will be described in further detail with reference to the drawings and examples, in order to make the objects, technical solutions and advantages of the present invention more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
Referring to fig. 1 to 5, in the low noise amplifier of the present invention, a radio frequency signal enters from a radio frequency input port, and after being amplified by an amplifying circuit, a part of the signal is output from a radio frequency output port, and the other part of the signal returns to the radio frequency input port through a bias circuit; the amplifying circuit includes a cascode amplifier.
In the invention, the static working point is stabilized by the bias circuit structure, thereby optimizing noise and improving high-frequency stability, and the gain is compensated by adopting the common source amplifier structure, so that the performance of the low-noise amplifier is improved, and the performance of the whole system is further improved.
In the invention, the bias circuit is an active bias circuit, a reverse diode is arranged in the active bias circuit, the active bias circuit stabilizes a static working point through the structure of the active bias circuit, optimizes noise, and the reverse diode added in the active bias circuit is used for improving high-frequency stability; further, the active bias circuit performs gate bias by adopting a mode of binding wires to chokes, so that the noise of the active bias circuit can be lower.
If a general active bias circuit is adopted, in the aspect of optimizing noise, if the inductance L2 in the figure 1 is changed into a large resistance, the same effect as that of the invention is difficult to achieve, and the cost of a chip is greatly increased, so that the cost of the chip is reduced, and the ultra-low noise coefficient is realized, the bias external choke coil is required to be adopted to feed back to an input port, the structure mode can not only optimize noise, but also be flexible to apply, the gain is compensated by adopting a common source amplifier structure, the performance of a low noise amplifier is improved, and the performance of the whole system is further improved.
The invention comprises an amplifying circuit, an active bias circuit and an RC parallel branch circuit; the bias circuit comprises a transistor M2, a reverse diode D1 and a resistor R2, wherein one end of the resistor R2 is respectively connected with the drain electrode of the transistor M2 and the grid electrode of the transistor M2, the other end of the resistor R2 is connected with an external choke coil through a binding wire and fed back to the grid electrode of the amplifying circuit, the grid electrode of the transistor M2 is connected with the drain electrode of the transistor M2, and the source electrode of the transistor M2 is grounded; specifically, the active bias circuit includes a transistor M2, a diode D1, and a resistor R2, where the resistor R2 is connected to the drain of the transistor M2, the gate of the transistor M2 is connected to the resistor R2 and the drain of the transistor M2 at the same time, the resistor R2 is connected to the external choke coil through a binding wire and fed back to the gate of the amplifying circuit, the source of the transistor M2 is grounded, the anode of the diode D1 is connected to the source of the transistor M2, and the cathode thereof is connected to the drain of the transistor M2.
In the invention, the amplifying circuit comprises a transistor M1 which has an amplifying function, and is connected with a feedback circuit, wherein the feedback circuit comprises a capacitor C3 and a resistor R1 which are connected in series, the resistor R1 is connected with the drain electrode of the transistor M1, and the capacitor C3 is connected with the grid electrode of the transistor M1.
In the invention, an amplifying circuit is connected with an RC parallel circuit, the RC parallel circuit comprises a resistor R3 and a capacitor C4, one end of the resistor R3 is connected with the drain electrode of a transistor M1, one end of the capacitor C4 is connected with the other end of the resistor R3, and the other end of the capacitor C4 is grounded; specifically, the RC parallel branch includes a resistor R3 and a capacitor C4, wherein the resistor R3 is connected to the drain of the transistor M1, and the capacitor C4 is connected to the resistor R3, and the other end thereof is grounded.
In the invention, a capacitor C1 is used as a blocking capacitor and is connected with a radio frequency input port, a capacitor C2 is used as a blocking capacitor and is connected with a radio frequency output port, a capacitor C2 is connected with one end of an inductor L1, the other end of the inductor L1 is connected with one end of a resistor R4, one end of the inductor L2 is connected with the other end of the resistor R4 and the resistor R2, the other end of the inductor L2 is connected with the capacitor C2, the inductor L1 is a choke coil of the radio frequency output port, and the inductor L2 is a choke coil of a feedback grid of a bias circuit.
The invention has the characteristic of low noise, and the working principle is as follows:
the active bias circuit formed by the transistor M2, the diode D1 and the resistor R2 is not directly fed back to the grid electrode of the transistor M1 through the R2, but noise is optimized through a special feedback mode of a binding wire external choke inductor, wherein the resistor R3 and the capacitor C4 are used for improving stability, and the resistor R1 and the capacitor C3 are used as negative feedback circuits for expanding bandwidth, improving stability and optimizing low-frequency noise.
As shown in fig. 4, the graph is a curve of the small signal gain of the design along with the change of frequency, the ordinate is used for representing the gain size, the abscissa is used for representing the frequency range, and the gain is ensured to be more than 18dB in the frequency band from 0.5GHz to 1GHz by adjusting the sizes of the resistor R1 and the capacitor C3.
As shown in the figure 5, the figure is a curve of the key index noise coefficient of the design along with the change of frequency, the ordinate is used for representing the noise size, the abscissa is used for representing the frequency range, compared with a traditional active bias circuit, the design has obvious advantages, the bias circuit and the main amplifying circuit can be effectively isolated by the bias mode of the choke coil, and therefore extra noise brought by the bias circuit can be reduced, and the noise coefficient is smaller than 0.2dB in the frequency band from 0.5GHz to 1 GHz. The conventional active bias needs to adjust the resistance value of R3 in fig. 2 to the level of ten thousand ohms, so that the noise index of the design is difficult to reach, and when R3 reaches ten thousand ohms, the voltage division effect is generated, so that the state of the radio frequency amplifying tube is affected.
The foregoing description is only of embodiments of the present invention, and is not intended to limit the scope of the invention, and all equivalent structures or equivalent processes using the descriptions and the drawings of the present invention or directly or indirectly applied to other related technical fields are included in the scope of the present invention.
Claims (5)
1. The low noise amplifier is characterized in that a radio frequency signal enters from a radio frequency input port, after being amplified by an amplifying circuit, one part of the signal is output from a radio frequency output port, and the other part of the signal returns to the radio frequency input port through a biasing circuit; the amplifying circuit comprises a cascode amplifier;
the bias circuit comprises a transistor M2, a reverse diode D1 and a resistor R2, wherein one end of the resistor R2 is respectively connected with the drain electrode of the transistor M2 and the grid electrode of the transistor M2, the other end of the resistor R2 is connected with an external choke coil through a binding wire and fed back to the grid electrode of the amplifying circuit, the grid electrode of the transistor M2 is connected with the drain electrode of the transistor M2, and the source electrode of the transistor M2 is grounded;
the amplifying circuit is connected with the feedback circuit, the feedback circuit comprises a capacitor C3 and a resistor R1 which are connected in series, the amplifying circuit comprises a transistor M1, the resistor R1 is connected with the drain electrode of the transistor M1, and the capacitor C3 is connected with the grid electrode of the transistor M1;
the amplifying circuit is connected with the RC parallel circuit, the RC parallel circuit comprises a resistor R3 and a capacitor C4, one end of the resistor R3 is connected with the drain electrode of the transistor M1, one end of the capacitor C4 is connected with the other end of the resistor R3, and the other end of the capacitor C4 is grounded;
the capacitor C2 is connected with one end of the inductor L1, the other end of the inductor L1 is connected with one end of the resistor R4, one end of the inductor L2 is connected with the other end of the resistor R4 and the resistor R2, the other end of the inductor L2 is connected with the capacitor C2, the inductor L1 is a choke coil of a radio frequency output port, and the inductor L2 is a choke coil of a feedback grid electrode of a bias circuit.
2. A low noise amplifier according to claim 1, wherein the bias circuit is an active bias circuit.
3. A low noise amplifier according to claim 2, wherein a reverse diode is provided within the active bias circuit.
4. A low noise amplifier according to claim 3, wherein the active bias circuit is gate biased by a binder wire to choke.
5. A low noise amplifier according to claim 1, wherein the capacitor C1 is connected as a dc blocking capacitor to the radio frequency input port and the capacitor C2 is connected as a dc blocking capacitor to the radio frequency output port.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310453819.2A CN116317980B (en) | 2023-04-25 | 2023-04-25 | Low noise amplifier |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310453819.2A CN116317980B (en) | 2023-04-25 | 2023-04-25 | Low noise amplifier |
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| Publication Number | Publication Date |
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| CN116317980A CN116317980A (en) | 2023-06-23 |
| CN116317980B true CN116317980B (en) | 2024-03-19 |
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| CN202310453819.2A Active CN116317980B (en) | 2023-04-25 | 2023-04-25 | Low noise amplifier |
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Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101043202A (en) * | 2006-03-22 | 2007-09-26 | 松下电器产业株式会社 | High-frequency power amplifier |
| CN201611870U (en) * | 2010-02-02 | 2010-10-20 | 杭州电子科技大学 | Capacitance negative feedback type low noise amplifier |
| CN101919158A (en) * | 2007-12-10 | 2010-12-15 | 香港城市大学 | Average power efficiency enhancement and linearity improvement of microwave power amplifiers |
| CN103117711A (en) * | 2013-01-29 | 2013-05-22 | 天津大学 | Monolithic integrated radio frequency high-gain low-noise amplifier |
| CN203457108U (en) * | 2013-08-16 | 2014-02-26 | 江苏博纳雨田通信电子有限公司 | Adaptive bias circuit applicable to CMOS (Complementary Metal Oxide Semiconductor) radio frequency power amplifier and amplifier |
| CN106712725A (en) * | 2016-11-03 | 2017-05-24 | 南京邮电大学 | Ultra wideband high-gain low noise amplifier based on monolithic microwave integrated circuit |
| CN107508562A (en) * | 2017-07-21 | 2017-12-22 | 天津大学 | L-band wideband low noise amplifier for Global electrical circuiti |
| CN110690859A (en) * | 2018-07-05 | 2020-01-14 | 株式会社村田制作所 | Power amplifying circuit |
| CN111313844A (en) * | 2020-03-19 | 2020-06-19 | 西安博瑞集信电子科技有限公司 | Self-adaptive bias circuit applied to low-noise amplifier chip |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100630340B1 (en) * | 2002-05-22 | 2006-10-02 | 학교법인 한국정보통신학원 | Bias control circuit for power amplifier |
-
2023
- 2023-04-25 CN CN202310453819.2A patent/CN116317980B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101043202A (en) * | 2006-03-22 | 2007-09-26 | 松下电器产业株式会社 | High-frequency power amplifier |
| CN101919158A (en) * | 2007-12-10 | 2010-12-15 | 香港城市大学 | Average power efficiency enhancement and linearity improvement of microwave power amplifiers |
| CN201611870U (en) * | 2010-02-02 | 2010-10-20 | 杭州电子科技大学 | Capacitance negative feedback type low noise amplifier |
| CN103117711A (en) * | 2013-01-29 | 2013-05-22 | 天津大学 | Monolithic integrated radio frequency high-gain low-noise amplifier |
| CN203457108U (en) * | 2013-08-16 | 2014-02-26 | 江苏博纳雨田通信电子有限公司 | Adaptive bias circuit applicable to CMOS (Complementary Metal Oxide Semiconductor) radio frequency power amplifier and amplifier |
| CN106712725A (en) * | 2016-11-03 | 2017-05-24 | 南京邮电大学 | Ultra wideband high-gain low noise amplifier based on monolithic microwave integrated circuit |
| CN107508562A (en) * | 2017-07-21 | 2017-12-22 | 天津大学 | L-band wideband low noise amplifier for Global electrical circuiti |
| CN110690859A (en) * | 2018-07-05 | 2020-01-14 | 株式会社村田制作所 | Power amplifying circuit |
| CN111313844A (en) * | 2020-03-19 | 2020-06-19 | 西安博瑞集信电子科技有限公司 | Self-adaptive bias circuit applied to low-noise amplifier chip |
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| CN116317980A (en) | 2023-06-23 |
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