CN116316055B - Semiconductor laser contact electrode and preparation method thereof - Google Patents
Semiconductor laser contact electrode and preparation method thereof Download PDFInfo
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- CN116316055B CN116316055B CN202310547285.XA CN202310547285A CN116316055B CN 116316055 B CN116316055 B CN 116316055B CN 202310547285 A CN202310547285 A CN 202310547285A CN 116316055 B CN116316055 B CN 116316055B
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- 239000003870 refractory metal Substances 0.000 claims abstract description 83
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
- C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The application discloses a semiconductor laser contact electrode and a preparation method thereof, wherein the semiconductor laser contact electrode comprises a substrate layer, a contact layer, a first diffusion barrier layer, a second diffusion barrier layer and an upper cover layer; the first diffusion barrier layer comprises a first bonding metal, a refractory metal or refractory alloy and a second bonding metal which are sequentially arranged from bottom to top, wherein the first bonding metal and the refractory metal or refractory alloy form a first miscible heterogeneous interface region, and the second bonding metal and the refractory metal or refractory alloy form a second miscible heterogeneous interface region. The semiconductor laser contact electrode and the preparation method thereof disclosed by the application can improve the high temperature resistance of the whole electrode and improve the manufacturing efficiency and yield of the semiconductor laser; the electrode resistance can still be kept at a lower level, and the performance of the semiconductor laser is improved; the thickness of the electrode is effectively reduced, the stress is reduced, the cracking risk caused by the increase of the thickness of the electrode is further reduced, and the product quality is improved.
Description
Technical Field
The application relates to the technical field of semiconductor lasers, in particular to a semiconductor laser contact electrode and a preparation method thereof.
Background
Semiconductor lasers, also known as laser diodes, are lasers that use semiconductor materials as the working substance. Compared with other types of lasers, semiconductor lasers are small in size, high in electro-optic conversion efficiency, wide in wavelength selection, long in service life and low in cost. Because of these advantages, semiconductor diode lasers are widely used in laser communication, optical storage, optical gyroscopes, laser printing, ranging, radar, and the like.
As a power device of high current density, a semiconductor laser is very sensitive to ohmic contact characteristics. In general, when a laser fails, it is largely due to contact electrode problems. However, for high power semiconductor lasers, the fabrication process mostly involves a high temperature environment. Under the high-temperature environment, the diffusion rate of metal atoms in the contact electrode is obviously increased, the metal film layers in the contact electrode are mixed in a large range, and overalloying occurs, so that the whole device is invalid, the production efficiency and the yield of the high-power semiconductor laser are further reduced, and the production cost of the high-power semiconductor laser is increased.
Disclosure of Invention
To solve one or more of the above problems, the present application provides a semiconductor laser contact electrode and a method of manufacturing the same.
According to one aspect of the present application, there is provided a semiconductor laser contact electrode comprising:
a substrate layer;
a contact layer on the substrate layer;
a first diffusion barrier layer on the contact layer;
a second diffusion barrier layer on the first diffusion barrier layer;
an upper cap layer on the second diffusion barrier layer;
the first diffusion barrier layer comprises a first bonding metal, a refractory metal and a second bonding metal which are sequentially arranged from bottom to top, wherein the first bonding metal and the refractory metal form a first miscible heterogeneous interface region, and the second bonding metal and the refractory metal form a second miscible heterogeneous interface region;
or the first diffusion barrier layer comprises a first bonding metal, a refractory alloy and a second bonding metal which are sequentially arranged from bottom to top, the first bonding metal and the refractory alloy form a first miscible heterogeneous interface region, and the second bonding metal and the refractory alloy form a second miscible heterogeneous interface region.
In some embodiments, when the refractory metal is disposed in the first diffusion barrier layer, the first bond metal and the refractory metal have different crystal structures, and the first bond metal and the refractory metal have an atomic mutual solubility greater than 0 and equal to or less than 5%, and the second bond metal and the refractory metal have different crystal structures, and the second bond metal and the refractory metal have an atomic mutual solubility greater than 0 and equal to or less than 5%; when the refractory alloy is arranged in the first diffusion barrier layer, the first bonding metal and the refractory alloy have different crystal structures, the atomic mutual solubility of the first bonding metal and the refractory alloy is more than 0 and less than or equal to 5 percent, the second bonding metal and the refractory alloy have different crystal structures, and the atomic mutual solubility of the second bonding metal and the refractory alloy is more than 0 and less than or equal to 5 percent.
In some embodiments, the first bond metal and the second bond metal are any one of Ti and Ni.
In some embodiments, when a refractory metal is disposed in the first diffusion barrier layer, the refractory metal is any one of Pt, cr, W, and Nb; when a refractory alloy is disposed in the first diffusion barrier layer, the refractory alloy is TiW.
In some embodiments, the first bond metal, the second bond metal, the refractory metal, or the refractory alloy each have a thickness of 25nm to 50nm.
In some embodiments, the thickness ratio of the first bond metal, the second bond metal, the refractory metal, or the refractory alloy is 1:1:1.
According to another aspect of the present application, there is provided a method of manufacturing a semiconductor laser contact electrode for manufacturing any of the above semiconductor laser contact electrodes, comprising the steps of:
step 201: providing a substrate;
step 202: sequentially depositing a contact layer metal film on the surface of the substrate and carrying out annealing treatment to form a contact layer;
step 203: depositing a first diffusion barrier layer above the contact layer, namely sequentially depositing a first bonding metal film, a refractory metal film or a refractory alloy film and a second bonding metal film above the contact layer by adopting magnetron sputtering, wherein the deposition rate of the magnetron sputtering is smaller than a preset rate value;
step 204: depositing a second diffusion barrier layer over the first diffusion barrier layer;
step 205: an upper cap layer is deposited over the second diffusion barrier layer.
In some embodiments, the first bond metal and the refractory metal or refractory alloy have different crystal structures, and the atomic mutual solubility of the first bond metal and the refractory metal or refractory alloy is greater than 0 and less than or equal to 5%; the second bonding metal and the refractory metal or refractory alloy have different crystal structures, and the atomic mutual solubility of the second bonding metal and the refractory metal or refractory alloy is more than 0 and less than or equal to 5%.
In some embodiments, the first bond metal film, the second bond metal film, the refractory metal film, or the refractory alloy film each have a thickness of 25nm to 50nm.
In some embodiments, the first bond metal film, the second bond metal film, the refractory metal film, or the refractory alloy film has a thickness ratio of 1:1:1.
The application discloses a semiconductor laser contact electrode and a preparation method thereof, wherein a first diffusion barrier layer formed by a first bonding metal, a second bonding metal and a refractory metal or refractory alloy in the middle of the two sides is arranged. The first bonding metal can ensure the adhesion of the first diffusion barrier layer and the contact layer, the second bonding metal can ensure the adhesion of the first diffusion barrier layer and the second diffusion barrier layer, the refractory metal or refractory alloy and the first bonding metal and the second bonding metal respectively form a first miscible heterogeneous interface region and a second miscible heterogeneous interface region which are stable at high temperature, and the first miscible heterogeneous interface region and the second miscible heterogeneous interface region have lower energy and can provide storage positions for diffused metal atoms, so that the diffusion of the metal atoms of the upper cover layer and the contact layer is effectively blocked, and the high temperature resistance of the whole electrode is improved; meanwhile, when the first and second miscible heterogeneous interface regions can transmit current in the first diffusion barrier layer, electrons smoothly pass through, so that the electrode resistance is not greatly increased. Therefore, the high temperature resistance of the whole electrode is effectively improved, the electrode resistance is not greatly increased, the problem that the electrode fails in the manufacturing process of the semiconductor laser is solved, the manufacturing efficiency and yield of the semiconductor laser are improved, and the performance of the semiconductor laser is improved.
Drawings
Fig. 1 is a schematic structural diagram of a contact electrode of a semiconductor laser according to an embodiment of the present application.
Fig. 2 is a transmission electron microscope micro-morphology of a first diffusion barrier layer in a semiconductor laser contact electrode according to an embodiment of the present application.
Fig. 3 is a partial enlarged view of the area a in fig. 2.
Fig. 4 shows the morphology of the electrode after annealing at 250 ℃ for one hour when the refractory metal Pt is disposed in the first diffusion barrier layer according to an embodiment of the present application.
Fig. 5 shows the morphology of the electrode after annealing at 400 ℃ for one hour when the refractory metal Pt is disposed in the first diffusion barrier layer according to an embodiment of the present application.
Fig. 6 is a graph showing the specific contact resistivity of a test electrode when a refractory metal Pt is disposed in a first diffusion barrier layer according to an embodiment of the present application.
FIG. 7 is a profile of an electrode after annealing at 250 ℃ for one hour when a refractory alloy TiW is disposed in a first diffusion barrier layer according to one embodiment of the present application.
FIG. 8 is a profile of an electrode after annealing at 400 ℃ for one hour when a refractory alloy TiW is disposed in a first diffusion barrier layer according to an embodiment of the present application.
Fig. 9 is a graph showing the specific contact resistivity of a test electrode when a refractory alloy TiW is disposed in a first diffusion barrier layer according to an embodiment of the present application.
Fig. 10 is a flowchart of a method for manufacturing a contact electrode of a semiconductor laser according to an embodiment of the present application.
Detailed Description
The present application will be described in further detail with reference to the drawings and examples, in order to make the objects, technical solutions and advantages of the present application more apparent. It should be understood that the specific embodiments described herein are illustrative of some, but not all embodiments of the application and are not intended to limit the application. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.
In the description of the present application, it should be noted that the terms "center", "upper", "lower", "left", "right", "front", "rear", "vertical", "horizontal", "inner", "outer", "both ends", "two sides", "bottom", "top", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, are merely for convenience in describing the present application and simplifying the description, and do not indicate or imply that the elements referred to must have a specific orientation or be configured and operated in a specific orientation, and thus should not be construed as limiting the present application. Furthermore, the terms "first," "second," "superior," "subordinate," "primary," "secondary," and the like are used for descriptive purposes only and may be used simply to more clearly distinguish between different components and are not to be construed as indicating or implying relative importance.
In the description of the present application, unless explicitly stated and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, integrally connected, mechanically connected, electrically connected, directly connected, indirectly connected through an intermediary, or communicating between two elements. The specific meaning of the above terms in the present application will be understood in specific cases by those of ordinary skill in the art.
In addition, the technical features of the different embodiments of the present application described below may be combined with each other as long as they do not collide with each other.
Example 1:
the embodiment of the application provides a semiconductor laser contact electrode, which comprises the following components with reference to the accompanying drawings 1-3 in the specification:
a substrate layer 1;
a contact layer 2 on the substrate layer 1;
a first diffusion barrier layer 3 on the contact layer 2;
a second diffusion barrier layer 4 on the first diffusion barrier layer 3;
an upper cap layer 5 on the second diffusion barrier layer 4;
the first diffusion barrier layer 3 includes a first bonding metal, a refractory metal, and a second bonding metal sequentially disposed from bottom to top, where the first bonding metal and the refractory metal form a first miscible heterogeneous interface region 31, and the second bonding metal and the refractory metal form a second miscible heterogeneous interface region.
The semiconductor laser contact electrode disclosed by the application enables the whole electrode to form good ohmic contact with the substrate layer 1 by arranging the contact layer 2, and inhibits the diffusion of metal atoms in the upper cover layer 5 and the contact layer 2 by arranging the first diffusion barrier layer 3 and the second diffusion barrier layer 4. The provision of the cap layer 5 enables the electrode to be better bonded to the gold wire leads.
In the first diffusion barrier layer 3, the first bonding metal is used for ensuring the adhesion of the first diffusion barrier layer 3 and the contact layer 2, the second bonding metal is used for ensuring the adhesion of the first diffusion barrier layer 3 and the second diffusion barrier layer 4, and the refractory metal is used for forming a first miscible heterogeneous interface region 31 and a second miscible heterogeneous interface region which are stable at high temperature with the first bonding metal and the second bonding metal respectively. When the deposition rates of the bond metal and the refractory metal are relatively small, the corresponding thin film growth process approaches the thermodynamic equilibrium process. At this time, the growth surfaces of the bonding metal and the refractory metal are close-packed surfaces of respective crystal structures, and the corresponding miscible heterogeneous interface regions have low energy, and can provide storage positions for other diffused metal atoms, thereby effectively preventing diffusion of metal atoms of the upper cover layer 5 and the contact layer 2. By effectively inhibiting the diffusion of metal atoms, the high temperature resistance of the electrode is improved, the contact electrode is prevented from being over-alloyed due to high temperature in the preparation process of the semiconductor laser, and the production efficiency and yield of the semiconductor laser are improved. Meanwhile, when the first and second miscible heterogeneous interface regions enable current to be transmitted in the first diffusion barrier layer, electrons can smoothly pass through, and therefore electrode resistance is not greatly increased. Therefore, the high temperature resistance of the whole electrode is effectively improved, the electrode resistance is not greatly increased, the problem that the electrode fails in the manufacturing process of the semiconductor laser is solved, the manufacturing efficiency and yield of the semiconductor laser are improved, and the performance of the semiconductor laser is improved.
In alternative embodiments, the substrate layer 1 may be made of an n-GaAs material. When the substrate layer 1 is made of n-GaAs material, the material of the contact layer 2 may be selected from an alloy system capable of making ohmic contact with the n-GaAs substrate. Specifically, the alloy system forming ohmic contact with the n-GaAs substrate layer may be a Ni-Ge-Au metallization system, a Pt-Ge-Au metallization system, or a Pd-Ge-Au metallization system.
In an alternative embodiment, the contact layer 2 may employ a Ni-Ge-Au metallization system, wherein the layer thickness ratio of Ni, ge and Au may be 1:2:2. specifically, the layer thicknesses of Ni, ge and Au may be 15nm, 30nm and 30nm, respectively. Thus, the whole electrode and the n-GaAs substrate layer can form good ohmic contact.
In alternative embodiments, the first bond metal and the refractory metal have different crystal structures, and the atomic mutual solubility of the first bond metal and the refractory metal may be greater than 0 and less than or equal to 5%; the second bond metal and the refractory metal have different crystal structures, and the atomic mutual solubility of the second bond metal and the refractory metal may be greater than 0 and less than or equal to 5%. Because the mutual solubility of the first binding metal and the second binding metal with the refractory metal is more than 0 and less than or equal to 5%, the first binding metal and the second binding metal can be mutually dissolved with the refractory metal but can not form new phases, so that a first mutually-dissolved heterogeneous interface region and a second mutually-dissolved heterogeneous interface region which are stable at high temperature are formed. When the bonding metal and the refractory metal have different crystal structures, other metal atoms can enter the next layer only by changing the diffusion mode when crossing the first and second miscible heterogeneous interface regions 31, 2, thereby realizing more efficient blocking of the diffusion of the metal atoms of the upper cover layer 5 and the contact layer, and improving the high temperature resistance of the whole electrode; the bonding metal and the refractory metal have a certain mutual solubility, and when current is transmitted in the first diffusion barrier layer 3, electrons can smoothly pass through the first mutual-soluble heterogeneous interface region 31 and the second mutual-soluble heterogeneous interface region, so that the first diffusion barrier layer 3 does not cause a great increase in electrode resistance, and the whole electrode has lower resistance.
In an alternative embodiment, the layer thicknesses of the first bond metal, refractory metal, and second bond metal need only be such as to ensure the lowest layer thickness of the process window required for the formation of the corresponding metal film. In particular, the layer thickness of the first bond metal, the second bond metal, the refractory metal or the refractory alloy may be 25nm to 50nm. Since the first diffusion barrier layer 3 serves as a barrier to diffusion of metal atoms, the first and second miscible heterogeneous interface regions 31 and 31 are not critical to the layer thicknesses of the first bonding metal, refractory metal, and second bonding metal. When the layer thickness of the first bonding metal, the refractory metal and the second bonding metal is the lowest layer thickness of the process window, the first diffusion impervious layer 3 does not have a larger influence on the thickness of the electrode, so that the whole electrode is ensured to have lower resistance and stress while the high temperature resistance is improved, the fragmentation risk of the whole device is reduced, and the product quality is improved.
In an alternative embodiment, the layer thicknesses of the first bond metal, refractory metal, and second bond metal may all be 25nm.
In an alternative embodiment, the first bonding metal and the second bonding metal may be metals having adhesion, such as Ti, ni, or the like. The refractory metal may be a metal such as Pt, cr, W, nb. In this embodiment, the first bonding metal and the second bonding metal are both Ti and the refractory metal is Pt. Since Pt and Ni have a face-centered cubic structure, cr, W, and Nb have a body-centered cubic structure, and Ti has a close-packed hexagonal structure, the first and second miscible heterogeneous interface regions 31 and 31 in the first diffusion barrier layer may be Ti/Pt interfaces, ti/Cr interfaces, ti/W interfaces, ti/Nb interfaces, ni/Cr interfaces, ni/W interfaces, ni/Nb interfaces, and so on.
In an alternative embodiment, the material of the second diffusion barrier layer 4 may be Pt, and the layer thickness of the second diffusion barrier layer 4 is 100nm-150nm.
In an alternative embodiment, the material of the upper cover layer 5 may be Au, and the layer thickness of the upper cover layer 5 is 100nm-200nm.
In this embodiment, the material of the substrate layer 1 is n-GaAs, the contact layer 2 includes a metal film of Ni, ge and Au, the first diffusion barrier layer 3 is sequentially formed from bottom to top by a first bonding metal Ti, a first miscible heterogeneous interface region 31, a refractory metal Pt, a second miscible heterogeneous interface region, and a second bonding metal Ti, the material of the second diffusion barrier layer 4 is Pt, and the material of the upper cover layer 5 is Au.
Referring to fig. 4 of the specification, the electrode provided in this example is shown in morphology after annealing at 250 ℃ for one hour. It can be seen from fig. 4 of the specification that no alloy spots are formed on the electrode surface.
Referring to fig. 5 of the specification, the electrode provided in this example is shown in morphology after annealing at 400 ℃ for one hour. It can be observed from fig. 5 of the specification that only a few alloy spots are present on the electrode surface and no overalloying takes place.
In this embodiment, the growth process of the first diffusion barrier layer 3 is close to thermodynamic equilibrium, so the growth planes of the first bonding metal Ti, refractory metal Pt and second bonding metal Ti are all atomic close-packed planes with the lowest energy. The crystal structure of Ti is close-packed hexagonal, and the crystal structure of Pt is face-centered cubic. The first and second miscible heterogeneous interface regions 31 and 31 composed of metals of different crystal structures have low energy, and can effectively block diffusion of Au atoms, thereby improving high temperature resistance of the entire electrode.
In the semiconductor laser contact electrode provided in this embodiment, au atoms in the contact layer 2 and the upper cover layer 5 cannot break through the first diffusion barrier layer 3 and the second diffusion barrier layer 4 in the annealing process at 400 ℃, so that no overalloying occurs after annealing of the semiconductor laser contact electrode, and alloy points are only generated in the upper cover layer 5 where Au atoms are severely diffused. At this time, the structures of the contact layer 2, the first diffusion barrier layer 3, the second diffusion barrier layer 4, and the cap layer 5 in the semiconductor laser contact electrode are still maintained.
Since the first and second miscible heterogeneous interface regions 31 and 31 in the first diffusion barrier layer 3 have atomic miscible regions therein, when a current is transmitted through the first diffusion barrier layer 3, the first and second miscible heterogeneous interface regions 31 and 31 do not strongly scatter carriers, and thus electrons can be smoothly transmitted through the first diffusion barrier layer 3. Referring to fig. 6 of the specification, the specific contact resistivity of the semiconductor laser contact electrode provided in this embodiment was detected by a four-probe method, in fig. 6 of the specification, the abscissa represents the natural logarithm of the ratio of the electrode outer diameter to the electrode inner diameter, the ordinate represents the ratio of the voltage to the current, the solid point in the figure represents the data point corresponding to the detection result, the black line represents the connecting line of the data points, the gray line represents the straight line after the linear fitting of the detection result, and the specific contact resistivity of the semiconductor laser contact electrode was finally calculated to be 3.1197 ×10 -6 Ω·cm 2 . Therefore, the specific contact resistivity of the contact electrode of the semiconductor laser provided by the embodiment can still be maintained at a lower level, and the resistance of the contact electrode of the semiconductor laser is not obviously increased.
The semiconductor laser contact electrode disclosed by the application has the beneficial effects that: the diffusion of metal atoms of the upper cover layer and the contact layer can be effectively prevented, the high temperature resistance of the whole electrode is improved, and the manufacturing efficiency and yield of the semiconductor laser are improved; when the first and second miscible heterogeneous interface regions transmit current in the first diffusion barrier layer, electrons can smoothly pass through, so that the electrode resistance can still be kept at a lower level, and the performance of the semiconductor laser is improved; the thickness of each metal film in the first diffusion barrier layer only needs to ensure the lowest thickness of the process window, the thickness of the electrode does not need to be greatly increased, the fragmentation risk caused by the increase of the thickness of the electrode is reduced, and the product quality is improved.
Example 2:
the embodiment of the application provides a semiconductor laser contact electrode, which comprises:
a substrate layer 1;
a contact layer 2 on the substrate layer 1;
a first diffusion barrier layer 3 on the contact layer 2;
a second diffusion barrier layer 4 on the first diffusion barrier layer 3;
an upper cap layer 5 on the second diffusion barrier layer 4;
the first diffusion barrier layer 3 includes a first bonding metal, a refractory alloy, and a second bonding metal sequentially disposed from bottom to top, where the first bonding metal and the refractory alloy form a first miscible heterogeneous interface region 31, and the second bonding metal and the refractory alloy form a second miscible heterogeneous interface region.
The semiconductor laser contact electrode disclosed by the application can form good ohmic contact with the substrate layer 1 through arranging the contact layer 2, and inhibit diffusion of metal atoms in the upper cover layer 5 and the contact layer 2 through arranging the first diffusion barrier layer 3 and the second diffusion barrier layer 4. The provision of the cap layer 5 enables the electrode to be better bonded to the gold wire leads.
In the first diffusion barrier layer 3, the first bonding metal is used for ensuring the adhesion of the first diffusion barrier layer 3 and the contact layer 2, the second bonding metal is used for ensuring the adhesion of the first diffusion barrier layer 3 and the second diffusion barrier layer 4, and the refractory alloy is used for forming a first miscible heterogeneous interface region 31 and a second miscible heterogeneous interface region which are stable at high temperature with the first bonding metal and the second bonding metal respectively. When the deposition rates of the bond metal and refractory alloy are relatively small, the corresponding thin film growth process approaches the thermodynamic equilibrium process. At this time, the growth surfaces of the bonding metal and the refractory alloy are atomic close-packed surfaces of respective crystal structures, and the corresponding mutually-soluble heterogeneous interface regions have low energy, so that storage positions can be provided for other diffused metal atoms, and diffusion of the metal atoms of the upper cover layer 5 and the contact layer 2 can be effectively prevented. By effectively inhibiting the diffusion of metal atoms, the high temperature resistance of the electrode is improved, the contact electrode is prevented from being over-alloyed due to high temperature in the preparation process of the semiconductor laser, and the production efficiency and yield of the semiconductor laser are improved. Meanwhile, when the first and second miscible heterogeneous interface regions enable current to be transmitted in the first diffusion barrier layer, electrons can smoothly pass through, and therefore electrode resistance is not greatly increased. Therefore, the high temperature resistance of the whole electrode is effectively improved, the electrode resistance is not greatly increased, the problem that the electrode fails in the manufacturing process of the semiconductor laser is solved, the manufacturing efficiency and the yield of the semiconductor laser are improved, and the performance of the semiconductor laser is improved.
In alternative embodiments, the substrate layer 1 may be made of an n-GaAs material. When the substrate layer 1 is made of n-GaAs material, the material of the contact layer 2 may be selected from an alloy system capable of making ohmic contact with the n-GaAs substrate. Specifically, the alloy system forming ohmic contact with the n-GaAs substrate layer may be a Ni-Ge-Au metallization system, a Pt-Ge-Au metallization system, or a Pd-Ge-Au metallization system.
In an alternative embodiment, the contact layer 2 may employ a Ni-Ge-Au metallization system, wherein the layer thickness ratio of Ni, ge and Au may be 1:2:2. specifically, the layer thicknesses of Ni, ge and Au may be 15nm, 30nm and 30nm, respectively. Thus, the whole electrode and the n-GaAs substrate layer can form good ohmic contact.
In alternative embodiments, the first bond metal and the refractory alloy have different crystal structures, and the atomic mutual solubility of the first bond metal and the refractory alloy may be greater than 0 and less than or equal to 5%; the second bond metal and the refractory alloy have different crystal structures, and the atomic mutual solubility of the second bond metal and the refractory alloy may be greater than 0 and less than or equal to 5%. Because the mutual solubility of the first binding metal and the second binding metal and the refractory alloy is more than 0 and less than or equal to 5 percent, the first binding metal and the second binding metal can be mutually dissolved with the refractory alloy but can not form new phases, so that a first mutually-dissolved heterogeneous interface region and a second mutually-dissolved heterogeneous interface region which are stable at high temperature are formed. When the bonding metal and the refractory alloy have different crystal structures, other metal atoms can enter the next layer only by changing the diffusion mode when crossing the first and second miscible heterogeneous interface regions 31, 2, thereby realizing more efficient blocking of the diffusion of the metal atoms of the upper cover layer 5 and the contact layer, and improving the high temperature resistance of the whole electrode; the bonding metal and the refractory alloy have a certain mutual solubility, and when current is transmitted in the first diffusion barrier layer 3, electrons can smoothly pass through the first mutual-soluble heterogeneous interface region 31 and the second mutual-soluble heterogeneous interface region, so that the first diffusion barrier layer 3 does not cause a great increase in electrode resistance, and the whole electrode has lower resistance.
In an alternative embodiment, the layer thicknesses of the first bond metal, the refractory alloy, and the second bond metal need only ensure a minimum layer thickness for the process window required for the formation of the corresponding metal film. In particular, the layer thickness of the first bond metal, the second bond metal, the refractory alloy or the refractory alloy may be 25nm to 50nm. Because the first diffusion barrier layer 3 is used for preventing metal atoms from diffusing, the first and second miscible heterogeneous interface regions 31 and 31 have no high requirements on the layer thicknesses of the first bonding metal, the refractory alloy and the second bonding metal, and when the layer thicknesses of the first bonding metal, the refractory alloy and the second bonding metal are the lowest layer thicknesses of the process window, the first diffusion barrier layer 3 does not have a great influence on the thickness of the electrode, so that the whole electrode can have lower resistance and stress while the high temperature resistance is improved, the cracking risk of the whole device is reduced, and the product quality is improved.
In an alternative embodiment, the layer thicknesses of the first bond metal, the refractory alloy, and the second bond metal may all be 25nm.
In an alternative embodiment, the first bonding metal and the second bonding metal may be metals having adhesion, such as Ti, ni, or the like. The refractory alloy may be a TiW alloy. In this embodiment, the first bonding metal and the second bonding metal are both Ti, and the refractory alloy is a TiW alloy. Thus, the first and second miscible heterogeneous interface regions 31, 31 in the first diffusion barrier layer 3 may be Ti/TiW interfaces.
In an alternative embodiment, the material of the second diffusion barrier layer 4 may be Pt, and the layer thickness of the second diffusion barrier layer 4 is 100nm-150nm.
In an alternative embodiment, the material of the upper cover layer 5 may be Au, and the layer thickness of the upper cover layer 5 is 100nm-200nm.
In this embodiment, the material of the substrate layer 1 is n-GaAs, the contact layer 2 includes a metal film of Ni, ge and Au, the first diffusion barrier layer 3 is sequentially formed from bottom to top by a first bonding metal Ti, a first miscible heterogeneous interface region 31, a refractory alloy TiW alloy, a second miscible heterogeneous interface region, and a second bonding metal Ti, the material of the second diffusion barrier layer 4 is Pt, and the material of the upper cover layer 5 is Au.
Referring to fig. 7 of the specification, the electrode provided in this example is shown in morphology after annealing at 250 c for one hour. It can be seen from fig. 7 of the specification that no alloy spots are formed on the electrode surface.
Referring to fig. 8 of the specification, the electrode provided in this example is shown in morphology after annealing at 400 ℃ for one hour. It can be seen from fig. 8 of the specification that only a very small number of alloy spots are present on the electrode surface, and no overalloying takes place.
In this embodiment, the growth process of the first diffusion barrier layer 3 is close to thermodynamic equilibrium, so the growth surfaces of the first bonding metal Ti, the refractory alloy TiW and the second bonding metal Ti are all atomic close-packed surfaces with low energy. The crystal structure of Ti is close-packed hexagonal, and the crystal structure of TiW is body-centered cubic. The first and second miscible heterogeneous interface regions 31 and 31 composed of metals of different crystal structures have low energy, and can effectively block diffusion of Au atoms, so that the first diffusion barrier layer 3 is not penetrated by a large amount of diffused Au atoms at 400 ℃ of high-temperature annealing, thereby improving high-temperature resistance of the whole electrode.
In the semiconductor laser contact electrode provided in this embodiment, au atoms in the contact layer 2 and the upper cover layer 5 cannot break through the first diffusion barrier layer 3 and the second diffusion barrier layer 4 in the annealing process at 400 ℃, so that no overalloying occurs after annealing of the semiconductor laser contact electrode, and alloy points are only generated in the upper cover layer 5 where Au atoms are severely diffused. At this time, the structures of the contact layer 2, the first diffusion barrier layer 3, the second diffusion barrier layer 4, and the cap layer 5 in the semiconductor laser contact electrode are still maintained.
Since the atomic ratio of Ti to W in the TiW alloy is 1:9, the TiW alloy is a Ti-containing solid solution of W. In the first and second miscible heterogeneous interface regions 31, ti metal and TiW alloy are capable of undergoing miscibility. Therefore, electrons are not significantly scattered when they are transported in the first diffusion barrier layer 3, and electrons can be smoothly transported in the first diffusion barrier layer 3. Referring to fig. 9 of the specification, the specific contact resistivity of the semiconductor laser contact electrode provided in this embodiment was detected by the four-probe method, in fig. 9 of the specification, the abscissa represents the natural logarithm of the ratio of the electrode outer diameter to the electrode inner diameter, the ordinate represents the ratio of the voltage to the current, the solid point in the figure represents the data point corresponding to the detection result, the black line represents the connecting line of the data points, the gray line represents the straight line after the linear fitting of the detection result, and the specific contact resistivity of the semiconductor laser contact electrode was finally calculated to be 2.2075 ×10 -6 Ω·cm 2 . Therefore, the specific contact resistivity of the contact electrode of the semiconductor laser provided by the embodiment can still be maintained at a lower level, and the resistance of the contact electrode of the semiconductor laser is not obviously increased.
The semiconductor laser contact electrode disclosed by the application has the beneficial effects that: the diffusion of metal atoms of the upper cover layer and the contact layer is effectively prevented, the high temperature resistance of the whole electrode is improved, and the manufacturing efficiency and yield of the semiconductor laser are improved; when the first and second miscible heterogeneous interface regions transmit current in the first diffusion barrier layer, electrons can smoothly pass through, so that the electrode resistance can still be kept at a lower level, and the performance of the semiconductor laser is improved; the thickness of each metal film in the first diffusion barrier layer only needs to ensure the lowest thickness of a process window required by the formation of the corresponding metal film, the thickness of the electrode does not need to be greatly increased, the fragmentation risk caused by the increase of the thickness of the electrode is reduced, and the product quality is improved.
Example 3:
referring to fig. 10 of the specification, an embodiment of the present application further provides a method for preparing a semiconductor laser contact electrode, which is used for preparing any semiconductor laser contact electrode in the above embodiment, and includes the following steps:
step 201: providing a substrate;
step 202: sequentially depositing a contact layer metal film on the surface of the substrate and carrying out annealing treatment to form a contact layer;
step 203: depositing a first diffusion barrier layer above the contact layer, namely sequentially depositing a first bonding metal film, a refractory metal film or a refractory alloy film and a second bonding metal film above the contact layer by adopting magnetron sputtering, wherein the deposition rate of the magnetron sputtering is smaller than a preset rate value;
step 204: depositing a second diffusion barrier layer over the first diffusion barrier layer;
step 205: an upper cap layer is deposited over the second diffusion barrier layer.
In an alternative embodiment, the first bond metal and the refractory metal or refractory alloy have different crystal structures, and the atomic mutual solubility of the first bond metal and the refractory metal or refractory alloy is greater than 0 and less than or equal to 5%;
the second bonding metal and the refractory metal or refractory alloy have different crystal structures, and the atomic mutual solubility of the second bonding metal and the refractory metal or refractory alloy is more than 0 and less than or equal to 5%.
Thus, the first bond metal and the second bond metal are miscible with the refractory metal or refractory alloy but do not form new phases, thereby forming a first miscible heterogeneous interface region and a second miscible heterogeneous interface region that are stable at high temperatures.
In step 201, an n-GaAs substrate may be selected as the substrate.
In step 202, a contact layer metal film may be deposited on the N-side surface of the substrate using electron beam evaporation. Specifically, ni, ge, and Au metal films may be sequentially deposited on a substrate.
In an alternative embodiment, the thicknesses of the Ni, ge and Au metal films are 15nm, 30nm and 30nm in order.
In step 202, annealing the structure having the contact layer metal film deposited thereon may include: and placing the structure deposited with the contact layer metal film in a furnace tube, and setting a procedure of heating from room temperature to 360 ℃ for 20 minutes, preserving heat at 360 ℃ for 30 minutes, and cooling from 360 ℃ to room temperature for 45 minutes.
In step 203, depositing a first diffusion barrier layer over the contact layer may specifically include:
and (3) sequentially depositing a first bonding metal film, a refractory metal film or a refractory alloy film and a second bonding metal film on the structure obtained in the step 202 at a rate lower than a preset rate value by using a magnetron sputtering technology to form a mutual-dissolution heterogeneous interface region.
Specifically, the preset rate value may be 2nm/min. Thus, when the deposition rate is less than 2nm/min, the growth process of the metal film is close to the thermodynamic equilibrium process, the growth surfaces of the first bonding metal, the second bonding metal and the refractory metal or refractory alloy are close-packed surfaces of respective crystal structures, and the corresponding mutually-soluble heterogeneous interface regions have low energy, so that storage positions can be provided for other diffused metal atoms, and the diffusion of the metal atoms of the upper cover layer 5 and the contact layer 2 is effectively blocked.
The thickness of the first bonding metal film, the second bonding metal film, the refractory metal film or the refractory alloy film is the lowest layer thickness of the corresponding metal film process window. In alternative embodiments, the first bond metal film, the second bond metal film, the refractory metal film, or the refractory alloy film are each 25nm to 50nm thick. Specifically, in this embodiment, the thickness of the first bonding metal film, the second bonding metal film, the refractory metal film, or the refractory alloy film is 25nm.
In alternative embodiments, the first bond metal film, the second bond metal film, the refractory metal film, or the refractory alloy film have a thickness ratio of 1:1:1.
In an alternative embodiment, the first bonding metal and the second bonding metal may be metals having adhesion, such as Ti, ni, or the like. The refractory metal or refractory alloy may be Pt, cr, W, nb or TiW, etc.
In an alternative embodiment, the material of the second diffusion barrier layer may be Pt, and the layer thickness of the second diffusion barrier layer is 100nm-150nm.
In an alternative embodiment, the material of the upper cap layer may be Au, and the layer thickness of the upper cap layer is 100nm-200nm.
In an alternative embodiment, both step 204 and step 205 may use magnetron sputtering techniques for deposition of the metal film.
The preparation method of the semiconductor laser contact electrode disclosed by the application has the beneficial effects that: the first diffusion barrier layer and the second diffusion barrier layer are prepared, so that the diffusion of metal atoms of the upper cover layer and the contact layer is effectively prevented, the high temperature resistance of the whole electrode is improved, and the manufacturing efficiency and yield of the semiconductor laser are improved; the first bonding metal and the second bonding metal are respectively mutually dissolved with refractory metal or refractory alloy to generate a first mutually-dissolved heterogeneous interface region and a second mutually-dissolved heterogeneous interface region, so that electrons can smoothly pass through when current is transmitted in the first diffusion barrier layer, the electrode resistance can still be kept at a lower level, and the performance of the semiconductor laser is improved; the thickness of each metal film in the first diffusion barrier layer is not excessively required, the thickness of the metal film is set to be the lowest thickness of a process window required by forming the metal film, the thickness of the electrode is not required to be greatly increased, the fragmentation risk caused by the increase of the thickness of the electrode is reduced, and the product quality is improved.
The foregoing is merely an alternative embodiment of the application, and it should be noted that modifications and variations could be made by those skilled in the art without departing from the principles of the application, and such modifications and variations should also be considered as being within the scope of the application.
Claims (9)
1. A semiconductor laser contact electrode, comprising:
a substrate layer;
a contact layer on the substrate layer;
a first diffusion barrier layer on the contact layer;
a second diffusion barrier layer on the first diffusion barrier layer;
an upper cap layer on the second diffusion barrier layer;
the contact layer is a metal film, the contact layer can enable the electrode and the substrate layer to form ohmic contact, and the upper cover layer can enable the electrode and the gold wire to be bonded;
the first diffusion barrier layer comprises a first bonding metal, a refractory metal and a second bonding metal which are sequentially arranged from bottom to top, wherein the first bonding metal and the refractory metal form a first mutually-soluble heterogeneous interface region stable at a high temperature, and the second bonding metal and the refractory metal form a second mutually-soluble heterogeneous interface region stable at a high temperature;
or the first diffusion barrier layer comprises a first bonding metal, a refractory alloy and a second bonding metal which are sequentially arranged from bottom to top, wherein the first bonding metal and the refractory alloy form a first mutually-soluble heterogeneous interface area stable at high temperature, and the second bonding metal and the refractory alloy form a second mutually-soluble heterogeneous interface area stable at high temperature;
when a refractory metal is disposed in the first diffusion barrier layer,
the first bond metal and the refractory metal have different crystal structures, and the atomic mutual solubility of the first bond metal and the refractory metal is more than 0 and less than or equal to 5%,
the second bonding metal and the refractory metal have different crystal structures, and the atomic mutual solubility of the second bonding metal and the refractory metal is more than 0 and less than or equal to 5%;
when a refractory alloy is disposed in the first diffusion barrier layer,
the first bond metal and the refractory alloy have different crystal structures, and the atomic mutual solubility of the first bond metal and the refractory alloy is more than 0 and less than or equal to 5%,
the second bond metal and the refractory alloy have different crystal structures, and the atomic mutual solubility of the second bond metal and the refractory alloy is greater than 0 and less than or equal to 5%.
2. The semiconductor laser contact electrode of claim 1, wherein the first and second bonding metals are any one of Ti and Ni.
3. The semiconductor laser contact electrode of claim 2, wherein,
when refractory metal is arranged in the first diffusion barrier layer, the refractory metal is any one of Pt, cr, W and Nb;
when the refractory alloy is arranged in the first diffusion barrier layer, the refractory alloy is TiW.
4. The semiconductor laser contact electrode of claim 1, wherein the thickness of the first bond metal, the second bond metal, the refractory metal, or the refractory alloy is from 25nm to 50nm.
5. The semiconductor laser contact electrode of claim 1, wherein the thickness ratio of the first bond metal, the second bond metal, the refractory metal, or the refractory alloy is 1:1:1.
6. A method for preparing a contact electrode of a semiconductor laser, for preparing a contact electrode of a semiconductor laser according to any one of claims 1 to 5, comprising the steps of:
step 201: providing a substrate;
step 202: sequentially depositing a contact layer metal film on the surface of the substrate and carrying out annealing treatment to form a contact layer;
step 203: depositing a first diffusion barrier layer above the contact layer, namely sequentially depositing a first bonding metal film, a refractory metal film or a refractory alloy film and a second bonding metal film on the contact layer by adopting magnetron sputtering, wherein the deposition rate of the magnetron sputtering is smaller than a preset rate value;
step 204: depositing a second diffusion barrier layer over the first diffusion barrier layer;
step 205: an upper cap layer is deposited over the second diffusion barrier layer.
7. The method for producing a contact electrode for a conductor laser according to claim 6, wherein the first bond metal and the refractory metal or the refractory alloy have different crystal structures, and the atomic mutual solubility of the first bond metal and the refractory metal is greater than 0 and equal to or less than 5%;
the second bonding metal and the refractory metal or the refractory alloy have different crystal structures, and the atomic mutual solubility of the second bonding metal and the refractory metal is more than 0 and less than or equal to 5%.
8. The method for producing a contact electrode for a conductor laser according to claim 6, wherein the thickness of the first bonding metal film, the second bonding metal film, the refractory metal film, or the refractory alloy film is 25nm to 50nm.
9. The method of manufacturing a contact electrode for a conductor laser according to claim 6, wherein a thickness ratio of the first bonding metal film, the second bonding metal film, the refractory metal film, or the refractory alloy film is 1:1:1.
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Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09321250A (en) * | 1996-06-03 | 1997-12-12 | Mitsubishi Electric Corp | Method and apparatus for fabricating semiconductor integrated circuit device |
| JP2000022109A (en) * | 1998-06-30 | 2000-01-21 | Toshiba Corp | Semiconductor device and manufacture thereof |
| JP2000077629A (en) * | 1998-08-27 | 2000-03-14 | Hyundai Electronics Ind Co Ltd | Laminated capacitor provided with diffusion barrier |
| JP2001015452A (en) * | 1999-06-28 | 2001-01-19 | Hitachi Ltd | Compound semiconductor device and fabrication thereof |
| CN2847534Y (en) * | 2005-10-15 | 2006-12-13 | 深圳飞通光电子技术有限公司 | III-V family compound semiconductor P type ohmic electrode |
| CN101211768A (en) * | 2006-12-25 | 2008-07-02 | 中芯国际集成电路制造(上海)有限公司 | Grid electrode and method for forming same |
| CN101471388A (en) * | 2007-12-28 | 2009-07-01 | 晶元光电股份有限公司 | Photoelectric semiconductor device |
| CN102856788A (en) * | 2009-03-26 | 2013-01-02 | 索尼公司 | Bi-section semiconductor laser device, method for manufacturing the same, and method for driving the same |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9379191B2 (en) * | 2011-12-28 | 2016-06-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | High electron mobility transistor including an isolation region |
-
2023
- 2023-05-16 CN CN202310547285.XA patent/CN116316055B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09321250A (en) * | 1996-06-03 | 1997-12-12 | Mitsubishi Electric Corp | Method and apparatus for fabricating semiconductor integrated circuit device |
| JP2000022109A (en) * | 1998-06-30 | 2000-01-21 | Toshiba Corp | Semiconductor device and manufacture thereof |
| JP2000077629A (en) * | 1998-08-27 | 2000-03-14 | Hyundai Electronics Ind Co Ltd | Laminated capacitor provided with diffusion barrier |
| JP2001015452A (en) * | 1999-06-28 | 2001-01-19 | Hitachi Ltd | Compound semiconductor device and fabrication thereof |
| CN2847534Y (en) * | 2005-10-15 | 2006-12-13 | 深圳飞通光电子技术有限公司 | III-V family compound semiconductor P type ohmic electrode |
| CN101211768A (en) * | 2006-12-25 | 2008-07-02 | 中芯国际集成电路制造(上海)有限公司 | Grid electrode and method for forming same |
| CN101471388A (en) * | 2007-12-28 | 2009-07-01 | 晶元光电股份有限公司 | Photoelectric semiconductor device |
| CN102856788A (en) * | 2009-03-26 | 2013-01-02 | 索尼公司 | Bi-section semiconductor laser device, method for manufacturing the same, and method for driving the same |
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