CN101471388A - Photoelectric semiconductor device - Google Patents
Photoelectric semiconductor device Download PDFInfo
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- CN101471388A CN101471388A CN 200710306612 CN200710306612A CN101471388A CN 101471388 A CN101471388 A CN 101471388A CN 200710306612 CN200710306612 CN 200710306612 CN 200710306612 A CN200710306612 A CN 200710306612A CN 101471388 A CN101471388 A CN 101471388A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The embodiment of the invention discloses a photoelectric semi-conductor device comprising a semi-conductor system which can switch between the luminous energy and the electrical energy, and at least a boundary layer, an electric conductor and electric contact points used for electrically connecting the semi-conductor system and the electric conductor which are formed on at least two surfaces of the semi-conductor system.
Description
Technical field
The present invention is about a kind of opto-semiconductor device and preparation method thereof, and especially to have with conductor and non-conductor be the opto-semiconductor device of the formed combined structure of material about a kind of.
Background technology
A kind of common structure of known light-emitting diode comprises growth substrate, n type semiconductor layer, p type semiconductor layer, and is positioned at luminescent layer between this two semiconductor layer.The reflector that stems from luminescent layer light in order to reflection also can optionally be formed in this structure.Under some situation, be optics, the electricity that improves light-emitting diode, the one at least that reaches mechanical characteristic, a kind of material after suitably selecting can be in order to be replaced into long substrate with the carrier as other structures of carrying except that the growth substrate, for example: metal or silicon are used in the sapphire substrate of replacement growth nitride.The growth substrate can use modes such as etching, grinding or laser remove to remove.In addition, the printing opacity oxide also can be used for disperseing performance to promote electric current in the light emitting diode construction.
There are several means and the structure that is formed on the growth substrate to form ohmic contact in order to the carrier that replaces.Wherein a kind of related data can be with reference to E.Fred Schubert, " Light-Emitting Diodes ", the 9.6th chapter, 2006.In addition, finished product of LED is cut back formation on wafer.How using suitable mode to protect semiconductor layer in cutting process also is a subject under discussion that receives publicity.Side surface formation protective layer (Passivation Layer) in semiconductor layer before cutting is a kind of common protection mode.Yet, must carefully control usually to avoid that diode behavior is caused negative effect in order to the correlation step that forms protective layer.
Summary of the invention
Comprise at least two lip-deep boundary layers that the semiconductor system, that can change is formed at this semiconductor system, an electric conductor, an and electrical contact according to the opto-semiconductor device of one embodiment of the invention between luminous energy and electric energy.
In addition, opto-semiconductor device of the present invention has more following several preferred embodiments.Aforesaid at least two surfaces comprise a side surface and the surface towards electric conductor.Electric conductor preferably has the intensity that is enough to the support semiconductor system, and for example: the thickness of electric conductor or rigidity are greater than semiconductor system.More preferably, electric conductor is the non-semiconductor material.Moreover electrical contact passes this boundary layer, and semiconductor system is electrically connected with electric conductor.The refraction coefficient of boundary layer is between semiconductor system and surrounding medium.
In addition, in several embodiment in addition of the present invention, opto-semiconductor device more can have following several distortion: a reflector can be formed between semiconductor system and electric conductor, and can reflect the light that stems from semiconductor system.One first knitting layer and one second knitting layer can be formed at the opposition side of electrical contact respectively, and are electrically connected to each other.One first knitting layer is electrically connected with semiconductor system, and at least partly electrical contact penetrates first knitting layer.One first knitting layer is electrically connected with semiconductor system and reflects the light that stems from semiconductor system.
In other two embodiment, one, opto-semiconductor device of the present invention more comprise one first knitting layer, are to be electrically connected with semiconductor system; And a reflector, between first knitting layer and semiconductor system, and reflection stems from the light of semiconductor system.Its two, opto-semiconductor device comprises a reflector, be between electrical contact and semiconductor system, and electrical contact contacts with reflector.
Among each embodiment of above-mentioned opto-semiconductor device, the spacing rule change between electrical contact is selected from by fixed cycle, variable period, quasi-periodicity property, geometric progression, reaches the group that no regularity constituted.In addition.The shape of electrical contact is selected from by rectangle, circle, ellipse, triangle, hexagon, irregular shape, and the combination of above shape.Moreover electrical contact more can comprise a matsurface.
In several embodiment again of the present invention, more disclose following several variations.Opto-semiconductor device more comprises one first intermediary layer, is electrically connected with semiconductor system; And one second intermediary layer, be formed on the electrical contact, and between first intermediary layer and this electrical contact.Opto-semiconductor device more comprises an electrode, is formed on the semiconductor system; And an insulation layer, corresponding to the position of electrode, and be positioned at same horizontal plane with electrical contact substantially.This insulation layer also can optionally be formed at the horizontal plane different with electrical contact.
The application's case still discloses other several embodiment.One, in opto-semiconductor device, boundary layer comprises a material for transformation of wave length.They are two years old, opto-semiconductor device comprises a passive luminescent layer, be formed at the surface of semiconductor system with respect to electrical contact, wherein passive luminescent layer can send one output light with response originate from semiconductor system one the input light, and output light with the input light have different wavelength or frequency spectrum.They are three years old, opto-semiconductor device comprises light extraction face, it is formed on the main exiting surface of opto-semiconductor device, and this light extraction face is selected from the group that constitutes by the protrusion of the protrusion of matsurface, systematicness and sunk structure, scrambling and sunk structure, with photonic crystal.
Description of drawings
Figure 1A～1C shows the manufacturing process according to the opto-semiconductor device of one embodiment of the invention;
Fig. 2 A～2D shows the profile according to the opto-semiconductor device of another embodiment of the present invention;
Fig. 3 A and 3B show the opto-semiconductor device according to one embodiment of the invention;
Fig. 4 A and 4B show the opto-semiconductor device that has insulation layer according to another embodiment of the present invention;
Fig. 5 shows the opto-semiconductor device that has insulation layer according to one embodiment of the invention;
Fig. 6 A～6C shows the opto-semiconductor device according to yet another embodiment of the invention;
Fig. 7 shows the opto-semiconductor device that has passive luminescent layer according to one embodiment of the invention;
Fig. 8 shows the opto-semiconductor device that has the bireflectance body according to one embodiment of the invention;
Fig. 9 shows the opto-semiconductor device that has the structuring exiting surface according to one embodiment of the invention;
Figure 10 shows the opto-semiconductor device according to one embodiment of the invention; And
Figure 11 shows the opto-semiconductor device according to another embodiment of the present invention.
Description of reference numerals
10 opto-semiconductor devices, 17 second knitting layers
11 temporary substrates, 18 electrical contacts
12 semiconductor systems, 18 ' electrical contact
13 reflector 19A insulation layers
14 first knitting layer 20B, second intermediary layer
15 boundary layers, 21 material for transformation of wave length
The last boundary layer 21A of 15A material for transformation of wave length
151 passive luminescent layer 21B material for transformation of wave length
152 articulamentums, 22 top electrodes
153 dead zones, 23 bottom electrodes
16 electric conductors, 24 electrical contacts
Embodiment
Following conjunction with figs. explanation embodiments of the invention.
Shown in Figure 1A, at first form semiconductor system 12 on temporary substrate 11, semiconductor system 12 is light-emitting diode (Light-Emitting Diode for example; LED), laser diode (Laser Diode; LD), solar cell (Solar Cell) etc. can carry out the semiconductor device that photoelectricity can be changed.Yet, " semiconductor system " speech does not represent in this system that all subsystems or unit are all semi-conducting material in this specification, the material of other non-semiconductors, for example: metal, oxide, insulator etc. all can optionally be integrated among this semiconductor system.
With the light-emitting diode is example, its structure comprise at least two layers have different electrically, the semiconductor layer of polarity or doping and be positioned at luminescent layer (Light-Emitting Layer) between this two semiconductor layer, or be called active layer (Active Layer).The luminous frequency spectrum of light-emitting diode can be adjusted by the composition that changes constituent material.The general at present material that uses is as AlGaInP (AlGaInP) series, aluminum indium gallium nitride (AlGaInN) series, zinc oxide (ZnO) series etc.In addition, luminous layer structure is as single heterojunction structure (single heterostructure; SH), double-heterostructure (doubleheterostructure; DH), bilateral double-heterostructure (double-side double heterostructure; DDH) or multi-layer quantum well (multi-quantum well; Moreover the logarithm of adjusting quantum well can also change emission wavelength MQW).Temporary substrate 11 is in order to grow up or bearing semiconductor system 12, and the material that is suitable for is including but not limited to germanium (Ge), GaAs (GaAs), indium phosphorus (InP), sapphire (Sapphire), carborundum (SiC), silicon (Si), lithium aluminate (LiAlO
2), zinc oxide (ZnO), gallium nitride (GaN), glass, composite material (Composite), diamond, CVD diamond, with diamond-like-carbon (Diamond-Like Carbon; DLC) etc.
After forming semiconductor system 12 on the temporary substrate 11, can optionally form reflector 13 with reflect directly or indirectly come from luminescent layer light towards specific direction.Reflector 13 is as silver (Ag), aluminium (Al), gold (Au), copper (Cu), titanium metal or distributing Bragg reflecting layer (Distributed Bragg Reflector such as (Ti); DBR).Reflector 13 can cover all or part of of semiconductor system 12 surfaces.
Then, use inductively coupled plasma (Inductively Coupled Plasma; ICP) or other dry etching technology etching semiconductor systems 12 that are suitable for and on the layer that covered until the part that exposes temporary substrate 11, for example remove the peripheral part of semiconductor system 12 and top lamination 13 and 14 among Figure 1A; Perhaps, be etched to the position of luminescent layer in the light-emitting diode at least.Re-use spin-coating method (SpinCoating) and form the layer that a boundary layer (Interfacial Layer) 15 is covered in semiconductor system 12 and is covered on it.For example, in Figure 1A, boundary layer 15 is covered in the upper surface of semiconductor system 12, reflector 13 and first knitting layer, 14 side surfaces and first knitting layer 14.Boundary layer 15 is between semiconductor system 12 and surrounding medium, and its available material is as: epoxy resin (Epoxy) and benzocyclobutene (benzocyclobutene; Insulating material such as BCB).
Other prepares electric conductor 16, and forms second knitting layer 17 and electrical contact 18 thereon.Electric conductor 16 is in order to bearing semiconductor system 12 and as current channel, usually it should have enough intensity to form firm structure, and its material is as germanium (Ge), GaAs (GaAs), indium phosphorus (InP), carborundum (SiC), silicon (Si), lithium aluminate (LiAlO
2), zinc oxide (ZnO), gallium nitride (GaN), copper (Cu), with aluminium electric conducting materials such as (Al).Electric conductor 16 parts are an absolute construction as can be shown in Figure 1A, and combine it with semiconductor system 12 dependency structures with ad hoc fashion.On the other hand, electric conductor 16 can also in electrical contact 18 after finishing on semiconductor system 12 parts again with formation such as galvanoplastic, bonding method or sedimentations.
The material of second knitting layer 17 is selected can be with reference to the material of above-mentioned first knitting layer 14, moreover, the material of first knitting layer 14 and second knitting layer 17 can be different can also be identical.In addition, remove the aspect in each accompanying drawing, first knitting layer 14 and second knitting layer 17 also can be selected a use.The material of electrical contact 18 is as indium (In), tin (Sn), aluminium (Al), silver (Ag), gold (Au), gold/beryllium (Au/Be), gold/germanium (Au/Ge), gold/zinc (Au/Zn), nickel (Ni), plumbous (Pb), lead/tin (Pb/Sn), palladium (Pd), platinum (Pt), zinc (Zn), germanium (Ge), titanium (Ti), copper (Cu), chromium (Cr) etc.In addition, if single kind of material or structure promptly can satisfy electric conductor 16, second knitting layer 17, with electrical contact 18 in three or appoint the two specification demand, then these a little corresponding parts can be integrated into single unit.
After finishing above-mentioned preparation, the boundary layer 15 and second knitting layer 17 are joined.At this moment, electrical contact 18 can push and penetrate boundary layer 15, and electrically contacts with first knitting layer 14 after having at least part electrical contact 18 can pass boundary layer 15, shown in Figure 1B.
Then, use modes such as wet etching, dry ecthing, mechanical lapping or laser remove to remove temporary substrate 11.Afterwards, form top electrode 22 and bottom electrode 23 respectively on semiconductor system 12 and electric conductor 16.Yet, bottom electrode 23 can also in semiconductor system 12 be formed on the electric conductor 16 before electric conductor 16 combines.In addition, electric conductor 16 is if possess necessary characteristic as electrode, and itself also can use electrode as, so, installs 10 and does not need to form in addition a bottom electrode 23 independently.If opto-semiconductor device 10 still belongs to wafer (Wafer) grade, then wafer need form single opto-semiconductor device 10 through the cutting rear.The structure that above-mentioned a plurality of step produced is shown in Fig. 1 C.At least a material that forms electrode 22 and electrode 23 can be respectively indium (In), tin (Sn), aluminium (Al), silver (Ag), gold (Au), gold/beryllium (Au/Be) lamination, gold/germanium (Au/Ge) lamination, gold/zinc (Au/Zn) lamination, nickel (Ni), palladium (Pd), platinum (Pt), zinc (Zn), germanium (Ge), titanium (Ti), copper (Cu), chromium (Cr) etc.
In other embodiment, to reduce its thickness, electrical contact 18 can further be penetrated in first knitting layer 14 by the length that increases electrical contact 18 or extruding boundary layer 15.Shown in Fig. 2 A, electrical contact 18 has run through boundary layer 15 and has goed deep in first knitting layer 14, but does not touch reflector 13 as yet, and first knitting layer 14 and 17 of second knitting layers still have boundary layer 15.At this moment, if electrical contact 18 and first knitting layer 14 all adopt suitable material, its two can form metal bond or congruent melting joint.
Shown in Fig. 2 B, electrical contact 18 has run through boundary layer 15 and has goed deep in first knitting layer 14, but does not touch reflector 13 as yet, and first knitting layer 14 and second knitting layer 17 contact with each other by pushing boundary layer 15.At this moment, if first knitting layer 14 and second knitting layer 17 all adopt suitable material, its two can form metal bond or congruent melting joint; And if electrical contact 18 and first knitting layer 14 also all adopt suitable material, its two can also form metal bond or congruent melting joint.
Shown in Fig. 2 C, electrical contact 18 has run through boundary layer 15 and has goed deep in first knitting layer 14, and touches the reflector 13 of conductivity.On the other hand, 17 of first knitting layer 14 and second knitting layers contact with each other by pushing boundary layer 15.At this moment, if first knitting layer 14 and second knitting layer 17 all adopt suitable material, its two can form metal bond or congruent melting joint; And if electrical contact 18 and first knitting layer 14 also all adopt suitable material, its two can also form metal bond or congruent melting joint.In addition, in present embodiment, electrically contact because electrical contact 18 has formed with reflector 13, therefore, first knitting layer 14 can adopt the insulating material that is suitable for bonding technique.
Another embodiment shown in Fig. 2 D, wherein electrical contact 18 has run through boundary layer 15 and has goed deep in first knitting layer 14, and touches the reflector 13 of conductivity.But in this example, 17 of first knitting layer 14 and second knitting layers directly do not contact because having boundary layer 15.At this moment, if electrical contact 18 and first knitting layer 14 all adopt suitable material, its two can form metal bond or congruent melting joint.In addition, in present embodiment, electrically contact because electrical contact 18 has formed with reflector 13, therefore, first knitting layer 14 can also adopt the insulating material that is suitable for bonding technique.Various distortion among Fig. 2 A～2D can be applied among each embodiment of the present invention through suitable adjustment.
In addition, first knitting layer 14 in the various embodiments described above is if select reflective material for use, for example: gold (Au) and silver (Ag), then reflector 13 is promptly inessential in device 10.At this moment, reflection function and engagement function are just by single structure, and for example first knitting layer provides.
It a little is how to form uniform current density in semiconductor system 12 that one of them of configuration electrical contact 18 considered.Generally speaking, electric current is that self-electrode 22 injects in the semiconductor system 12, and follow the shortest power path to flow out by electrode 23, therefore, the zone that is positioned at the semiconductor system 12 of electrode 22 belows has higher current density usually, and forms so-called current crowding (Current Crowding) effect.In other words, the zone of electrode 22 belows will produce more photon.Yet these photons are generally electrode 22 and absorb, reflect or scattering and can't effectively utilizing.Therefore, opto-semiconductor device 10 does not as shown in Figure 3A dispose electrical contact 18 and formation insulation layer 19A in electrode 22 belows.By current blocking (current blocking) effect that insulation layer 19A causes, the electric current that comes from electrode 22 is able to avoid electrode 22 lower zones and flows in the electrical contact 18 after outwards disperseing again in semiconductor system 12.So will having more in the semiconductor system 12, multizone is carried out opto-electronic conversion.The material of insulation layer 19A can be identical or different with boundary layer 15, and, it constitutes does not need to be full insulating material, flow through insulation layer 19A or form resistance as long as its structure can block electric current, for example: make electrical contact 18 highly be lower than the height of other electrical contacts or form an insulating barrier between electrical contact 18 and top electric conducting material corresponding to electrode 22 positions corresponding to electrode 22 positions greater than electrical contact 18.
Fig. 3 B is the sectional drawing of AA line segment among Fig. 3 A.Among the Yu Bentu, except that insulation layer 19A, electrical contact 18 with array format in boundary layer 15, and that the spacing that each electrical contact is 18 can be adjusted into is identical, different, be the geometric progression variation, no regularity variation, variable period variation, fixed cycle variation or quasi-periodicity property (quasi-periodicity) change.The position of insulation layer 19A and shape be corresponding to the position and the shape of electrode 22, its area can less than, equal or greater than the area of electrode 22.The shape of electrical contact 18 is not limited to rectangle, can also be the combination of circle, ellipse, triangle, hexagon, irregular shape or above shape.
Moreover in another embodiment of the present invention, shown in Fig. 4 A and Fig. 4 B, electrical contact 18 ' can also be conitnuous forms, and wherein Fig. 4 B is the sectional drawing of BB line segment among Fig. 4 A.Under consider identical with previous embodiment, insulation layer 19A is formed in the electrical contact 18 ' position corresponding to electrode 22.In present embodiment, the area that the area that the continous way electrical contact 18 ' and first knitting layer 14 join joins greater than distributing electrical contact 18 and first knitting layer 14, in other words, in this example, will there be more a spot of boundary layer 15 materials in electrical contact 18 ' and 14 of first knitting layers.
In Fig. 3 A～Fig. 4 B, though insulation layer 19A is formed at roughly the same horizontal plane with electrical contact 18, yet the present invention is not limited to this.In 16 of electrode 22 and 23 at electrode or electrode 22 and electric conductors, all can form a structure that can cause the current blocking effect corresponding to arbitrary height of electrode 22 positions.
In another embodiment of the present invention, disperse performance for forming preferable electric current, an insulation layer 19B more is formed between the reflector 13 and semiconductor system 12 of insulation layer 19A top.Insulation layer 19B can be identical or different with boundary layer 15, and it constitutes does not need to be full insulating material, as long as its structure can block or reduce electric current and flow through this zone.In addition, insulation layer 19A does not need together to exist with insulation layer 19B in this example, that is still can there be electrical contact 18 in insulation layer 19B below.Moreover the upper surface of insulation layer 19B is not limited to the plane, slightly makes face or patterned surface, also can be as the ridge face among Fig. 5.If this ridge mask has reflectivity, the light that then comes from semiconductor system 12 will be by ridged towards external reflectance, and therefore, light will be reduced by the probability that electrode 22 absorbs.
Several embodiment in addition of the present invention are shown in Fig. 6 A～Fig. 6 C.Sneak into material for transformation of wave length 21 in the boundary layer 15 of opto-semiconductor device 10 as shown in Figure 6A.Material for transformation of wave length 21 can be responded the electromagnetic wave with a kind of wavelength that semiconductor system 12 produces and produce the electromagnetic wave of another kind of wavelength, and its composition is as phosphor powder or dyestuff.Phosphor powder need have suitable particle diameter to reach preferable luminous performance, and below the about 5 μ m of preferable particle diameter, relevant patent sees also United States Patent (USP) the 6th, 245, No. 259.If can produce semiconductor system 12 collocation yttrium-aluminium-garnet (the Yttriumaluminium garnet of blue light wavelength scope light; YAG), terbium aluminium garnet (Terbium Aluminum Garnet; TAG), silicates (Silicate-based) or nitrogen oxide phosphor powders such as (oxynitride), can make opto-semiconductor device 10 produce white lights.
Shown in Fig. 6 B, a last boundary layer 15A who is mixed with material for transformation of wave length 21 is formed on the semiconductor system 12.The material of last boundary layer 15A can be with reference to above-mentioned boundary layer 15 employed materials.Shown in Fig. 6 C, all be mixed with material for transformation of wave length 21 in the boundary layer 15 of covering semiconductor system 12 peripheries and the last boundary layer 15A, and the material for transformation of wave length 21 in these two layers can be identical or different.Moreover last boundary layer 15A can have specific pattern to define the distribution of material for transformation of wave length.Dead zone 153 as shown in the figure is the zone that has with last boundary layer 15A dissimilar material, wherein may be for air, insulant, other kind phosphor powder or as tin indium oxide (indium tin oxide; ITO) etc. transparent conductor.Conductor in the dead zone 153 will help electric current evenly to be dispersed to semiconductor system 22 as if linking to each other with electrode 22.
The last boundary layer 15A of opto-semiconductor device 10 as shown in Figure 7 comprises a passive luminescent layer 151 and an articulamentum 152 at least.Passive luminescent layer 151 is as block fluorescent powder, III-V family semiconductor layer, with II-VI family semiconductor layer etc.The material of articulamentum 152 be comprise polyimides (PI), benzocyclobutene at least, cross fluorine cyclobutane (PFCB), with epoxy resin organic materials such as (Epoxy).Passive luminescent layer 151 can produce output light because of the input light of semiconductor system 12, and this input light has different wavelength or frequency spectrum with exporting between light.
In another embodiment of the present invention, as shown in Figure 8, comprise reflector 13B on the reflector 13A and in the opto-semiconductor device 10.The material of this two reflector is the material of the above-mentioned reflector 13 of reference respectively.The light that semiconductor system 12 produces two reflectors for this reason reflects and directive boundary layer 15.In addition, penetrate the light of opto-semiconductor device 10 if then had an opportunity by last reflector 13B to external reflectance towards the upper surface of semiconductor system 12 by other external object reflections.
The opto-semiconductor device 10 of another embodiment as shown in Figure 9 has structuring or coarse outer surface.This structuring or coarse outer surface have and destroy light in structure and the surrounding medium function of total reflection at the interface, and then the light of the opto-semiconductor device 10 that is increased extracts efficient.Structuring or coarse outer surface can be formed on the two outer surface of semiconductor system 12, boundary layer 15 or its.The roughness of matsurface should be good can reach the degree of carrying highlight extraction efficiency.Patterned surface can be protrusion and the sunk structure or photonic crystal (Photonic Crystal) structure of systematicness or scrambling.
Another embodiment of the present invention as shown in figure 10.16 of semiconductor system 12 in this routine opto-semiconductor device 10 and electric conductors are by the first intermediary layer 20A, electrical contact 18, link to each other with second intermediary layer 20B electricity.In the middle of manufacture process, electrical contact 18 is connected with the semiconductor system 12 that is formed with the first intermediary layer 20A after can covering the second intermediary layer 20B in advance again.The first intermediary layer 20A and the second intermediary layer 20B will contact with each other by extruding boundary layer 15.The material that constitutes boundary layer 15 has an opportunity to remain among the irrigation canals and ditches of 18 of electrical contacts.The first intermediary layer 20A and the second intermediary layer 20B not only form ohmic contact and more form firm physical property and contact.The material of this two intermediary layer is respectively titanium (Ti) or chromium (Cr).
One embodiment of the invention as shown in figure 11.Electrical contact 24 in this routine opto-semiconductor device 10 is an irregular structure as matsurface etc.The material of the first intermediary layer 20A and the second intermediary layer 20B as described above.In this example, the second intermediary layer 20B is covered on the electrical contact 24 and not with its complete planarization.The second intermediary layer 20B will pass boundary layer 15 and contact with the first intermediary layer 20A to the small part highlight.The material that constitutes boundary layer 15 is had an opportunity to remain in the pocket of 24 of electrical contacts of roughening and is helped being connected of the first intermediary layer 20A and the second intermediary layer 20B.
Though the present invention illustrated as above, its be not in order to limit the scope of the invention, enforcement order or the material and technology method used.For various modifications and the change that the present invention did, neither disengaging spirit of the present invention and scope.
Claims (20)
1. opto-semiconductor device comprises:
The semiconductor system can carry out the conversion between luminous energy and electric energy;
One boundary layer is formed at least two surfaces of this semiconductor system;
One electric conductor carries this semiconductor system; And
One electrical contact passes this boundary layer, and is electrically connected this semiconductor system and this electric conductor.
2. opto-semiconductor device as claimed in claim 1, wherein the optoelectronic semiconductor system comprises a light-emitting diode.
3. opto-semiconductor device as claimed in claim 1, wherein this boundary layer is formed between this semiconductor system and this electric conductor.
4. opto-semiconductor device as claimed in claim 1, wherein this boundary layer covers a side surface of this semiconductor system at least.
5. opto-semiconductor device as claimed in claim 1, wherein the refraction coefficient of this boundary layer is between this semiconductor system and a surrounding medium.
6. opto-semiconductor device as claimed in claim 1 also comprises:
One reflector is positioned between this semiconductor system and this electric conductor, and can reflects the light that stems from this semiconductor system.
7. opto-semiconductor device as claimed in claim 1 also comprises:
One first knitting layer and one second knitting layer lay respectively at the opposition side of this electrical contact, and are electrically connected to each other.
8. opto-semiconductor device as claimed in claim 1 also comprises:
One first knitting layer is electrically connected with this semiconductor system, and the part of this electrical contact penetrates this first knitting layer at least.
9. opto-semiconductor device as claimed in claim 1 also comprises:
One first knitting layer is electrically connected with this semiconductor system and reflects the light that stems from this semiconductor system.
10. opto-semiconductor device as claimed in claim 1 also comprises:
One first knitting layer is electrically connected with this semiconductor system; And
One reflector, between this first knitting layer and this semiconductor system, and reflection stems from the light of this semiconductor system.
11. opto-semiconductor device as claimed in claim 1 also comprises:
One reflector, between this electrical contact and this semiconductor system, and this electrical contact contacts with this reflector.
12. opto-semiconductor device as claimed in claim 1, wherein the spacing rule change between this electrical contact is selected from by fixed cycle, variable period, quasi-periodicity property, geometric progression, reaches the group that no regularity constituted.
13. opto-semiconductor device as claimed in claim 1, wherein the shape of this electrical contact is selected from by rectangle, circle, ellipse, triangle, hexagon, irregular shape, and the combination of above shape.
14. opto-semiconductor device as claimed in claim 1, wherein this electrical contact comprises a matsurface.
15. opto-semiconductor device as claimed in claim 1 also comprises:
One first intermediary layer is electrically connected with this semiconductor system; And
One second intermediary layer is formed on this electrical contact, and between this first intermediary layer and this electrical contact.
16. opto-semiconductor device as claimed in claim 1 also comprises:
One electrode is formed on this semiconductor system; And
One insulation layer corresponding to the position of this electrode, and is positioned at same horizontal plane with this electrical contact substantially.
17. opto-semiconductor device as claimed in claim 1 also comprises:
One electrode is formed on this semiconductor system; And
One insulation layer corresponding to the position of this electrode, and is positioned at the horizontal plane different with this electrical contact.
18. opto-semiconductor device as claimed in claim 1, wherein this boundary layer comprises a material for transformation of wave length.
19. opto-semiconductor device as claimed in claim 1 also comprises:
One passive luminescent layer is formed at the surface of this semiconductor system with respect to this electrical contact, and wherein this passive luminescent layer can send an output light and stems from an input light of this semiconductor system with response, and this output light and this input light have different wavelength.
20. opto-semiconductor device as claimed in claim 1 also comprises:
One light extraction face is formed on the main exiting surface of this opto-semiconductor device, and this light extraction face is selected from by the protrusion of the protrusion of matsurface, systematicness and sunk structure, scrambling and sunk structure, and the group that constitutes of photonic crystal.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201310085002.0A CN103219415B (en) | 2007-12-28 | 2007-12-28 | Opto-semiconductor device and manufacture method thereof |
| CN 200710306612 CN101471388A (en) | 2007-12-28 | 2007-12-28 | Photoelectric semiconductor device |
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| CN 200710306612 CN101471388A (en) | 2007-12-28 | 2007-12-28 | Photoelectric semiconductor device |
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| CN116316055A (en) * | 2023-05-16 | 2023-06-23 | 苏州长光华芯光电技术股份有限公司 | Semiconductor laser contact electrode and preparation method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN116316055A (en) * | 2023-05-16 | 2023-06-23 | 苏州长光华芯光电技术股份有限公司 | Semiconductor laser contact electrode and preparation method thereof |
| CN116316055B (en) * | 2023-05-16 | 2023-09-01 | 苏州长光华芯光电技术股份有限公司 | Semiconductor laser contact electrode and preparation method thereof |
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Application publication date: 20090701 |