CN116314488A - Chip transfer method and display panel - Google Patents

Chip transfer method and display panel Download PDF

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Publication number
CN116314488A
CN116314488A CN202310357712.8A CN202310357712A CN116314488A CN 116314488 A CN116314488 A CN 116314488A CN 202310357712 A CN202310357712 A CN 202310357712A CN 116314488 A CN116314488 A CN 116314488A
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substrate
emitting chip
light
memory material
material layer
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CN116314488B (en
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蒲洋
袁海江
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HKC Co Ltd
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HKC Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/24—Optical enhancement of defects or not directly visible states, e.g. selective electrolytic deposition, bubbles in liquids, light emission, colour change
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
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Abstract

The application specifically relates to a chip transferring method and a display panel, wherein a deformation memory material layer is formed on an epitaxial layer of a light-emitting chip, the light-emitting chip and the deformation memory material layer are taken down from a first substrate by a second connecting piece, and the second substrate with the light-emitting chip and the deformation memory material layer is aligned with a driving back plate so as to transfer the light-emitting chip onto the driving back plate. The light-emitting chip is lightened, and after the light-emitting chip which emits light normally is lightened, heat is generated to decompose the second connecting piece, so that the light-emitting chip is separated from the second substrate; the non-luminous light-emitting chip can not generate heat and decompose the second connecting piece, and the non-luminous light-emitting chip can be transferred away when the second substrate is removed; the heat generated by the abnormal light-emitting chip is higher than that generated by the normal light-emitting chip, so that the deformation memory material layer is changed from the first form to the second form, and the deformation memory material layer is clamped with the first connecting piece. The difficulty of repairing the chip is reduced, and the luminous brightness of the chip is ensured.

Description

Chip transfer method and display panel
Technical Field
The application belongs to the technical field of display, and particularly relates to a chip transfer method and a display panel.
Background
Light emitting diodes (Light Emitting Diode, LEDs) are widely used in display devices because of their good stability, long life, low power consumption, high color saturation, fast reaction speed, and high contrast. In the production process of the LED display device, the lighted LED crystal film needs to be directly transported to the display back plate without packaging, and in the production of Micro LEDs, millions or even tens of millions of Micro-sized LED chips need to be correctly and efficiently moved to the drive back plate, which is called mass transfer.
The existing transfer mode is to transfer and bind all LEDs on the growth substrate to the drive backboard, and then to light and detect abnormal LED chips on the drive backboard, but the difficulty of repairing the abnormal LED chips is high, and the drive backboard circuit is most likely to be damaged.
Disclosure of Invention
The invention aims to provide a chip transfer method and a display panel, which can identify abnormal LED chips in the transfer process and avoid the abnormal LED chips from being fixed on a backboard.
The first aspect of the present application provides a chip transfer method, including:
providing a first substrate, wherein a light-emitting chip is arranged on the first substrate, the light-emitting chip comprises an electrode, an epitaxial layer and a deformation memory material layer which are sequentially stacked, and the deformation memory material layer is in a first form;
providing a second substrate, wherein the second substrate is provided with a fixing unit corresponding to the light emitting chip, and the fixing unit comprises a first connecting piece and a second connecting piece which are arranged side by side;
performing alignment treatment on the first substrate and the second substrate so as to connect the second connecting piece with the epitaxial layer, and enabling the deformation memory material layer in the first form to be aligned and inserted with the first connecting piece;
removing the first substrate to transfer the light emitting chip onto the second substrate;
performing alignment treatment on the second substrate transferred with the light-emitting chip and the driving backboard, and connecting an electrode of the light-emitting chip with a binding area of the driving backboard;
performing lighting test on the light-emitting chip by using the driving backboard to determine the light-emitting state of the light-emitting chip;
when the light-emitting chip is in a normal light-emitting state, no connecting force exists between the second connecting piece and the epitaxial layer, and the deformation memory material layer is still in the first form; when the light-emitting chip is in an abnormal light-emitting state, the deformation memory material layer is deformed from the first shape to the second shape, and the deformation memory material layer in the second shape is clamped with the first connecting piece.
In an exemplary embodiment of the present application, the first connection piece includes a first connection block and a second connection block that are disposed at a distance from each other, and ends of the first connection block and the second connection block that are away from the second substrate are bent in a direction that is close to each other to form a clamping portion, and a spacing hole is formed between the clamping portion of the first connection block and the clamping portion of the second connection block;
the deformation memory material layer comprises a connecting part and a deformation part which are connected with each other, the connecting part is connected with the epitaxial layer, the deformation part is arranged on one side of the connecting part, which is far away from the epitaxial layer, and when the deformation memory material layer is in the first form, the deformation part is in a straight line shape capable of penetrating through the interval hole; when the deformation memory material layer is in the second form, the end part of the deformation part, which is far away from the connecting part, is bent towards the clamping part to form a claw clamped with the clamping part.
In an exemplary embodiment of the present application, the deformation portion includes a first portion and a second portion disposed side by side and spaced apart from each other, wherein:
when the deformation memory material layer is in the first form, the first part and the second part are both linear types perpendicular to the connecting part;
when the deformation memory material layer is in the second form, the ends of the first part and the second part, which are far away from the connecting part, are bent in the direction far away from each other to form the clamping jaw, the clamping jaw of the first part is clamped with the clamping part of the first connecting block, and the clamping jaw of the second part is clamped with the clamping part of the second connecting block.
In an exemplary embodiment of the present application, the light emitting chip further includes a clamping member disposed on the epitaxial layer, a clamping groove is formed between the clamping member and the epitaxial layer, and at least two opposite edges of the connecting portion are clamped in the clamping groove.
In an exemplary embodiment of the present application, the thickness of the second connecting member is greater than that of the first connecting member, and when the first substrate and the second substrate are subjected to alignment treatment, so that the second connecting member is connected with the epitaxial layer, the first connecting member is located at a side, away from the epitaxial layer, of the clamping member, and is in contact with or spaced from the clamping member.
In one exemplary embodiment of the present application, forming the first and second connection members on the second substrate includes the steps of:
coating a layer of pyrolytic glue layer on the second substrate, and processing the pyrolytic glue layer to form the second connecting piece;
the first connection member is formed on the second substrate.
In an exemplary embodiment of the present application, the first connector is located at one side of the second connector; or (b)
The second connector is disposed around the first connector.
In an exemplary embodiment of the present application, before forming the deformation memory material layer on the first substrate, the chip transferring method further includes:
providing a growth substrate, wherein the growth substrate is grown with the light-emitting chip;
providing the first substrate, wherein the first substrate is provided with an adhesive layer;
aligning the growth substrate and the first substrate so as to bond the light-emitting chip and the bonding layer;
removing the growth substrate to transfer the light emitting chip onto the first substrate;
and forming the deformation memory material layer on the epitaxial layer of the light-emitting chip.
In an exemplary embodiment of the present application, after the lighting test is completed, the chip transferring method further includes:
removing the second substrate;
and removing the deformation memory material layer and the clamping piece on the epitaxial layer.
A second aspect of the present application provides a display panel comprising a driving back plate and a plurality of sets of light emitting chips, at least part of the plurality of sets of light emitting chips being transferred onto the driving back plate by a light emitting chip transfer method as described in any one of the above.
The scheme of the application has the following beneficial effects:
the application scheme provides a chip transfer method, when the light emitting chip carries out huge transfer, form deformation memory material layer on the epitaxial layer of light emitting chip, take off light emitting chip and deformation memory material layer from first base plate through the second connecting piece in the second base plate, with the second base plate and the drive backplate counterpoint processing of light emitting chip and deformation memory material layer again to with light emitting chip transfer to on the drive backplate. The light-emitting chip is lightened after transfer, and the light-emitting chip which emits light normally generates heat after the light-emitting chip is lightened, so that the second connecting piece positioned on the second substrate can be decomposed, and the light-emitting chip is separated from the second substrate; the non-luminous light-emitting chip does not generate heat, and the second substrate and the second connecting piece connected with the luminous chip are not decomposed, so that the non-luminous light-emitting chip is transferred away when the second substrate is removed; and the heat generated by the abnormal light-emitting chip is higher than that generated by the normal light-emitting chip, so that the deformation memory material layer is changed from the first form to the second form, and then the deformation memory material layer is clamped with the first connecting piece. That is, when the second substrate is removed, the light-emitting chips which emit abnormal light and the light-emitting chips which do not emit light are taken away from the driving back plate, so that the repairing of the abnormal LED chips is avoided, the circuit of the driving back plate is better protected, and the light-emitting brightness of the LED chips is ensured.
The application scheme also provides a display panel, through above-mentioned chip transfer method, can screen unusual LED chip, guarantee that the LED chip on the drive backplate is the LED chip that normally shines, and then guarantee display panel's display effect.
Other features and advantages of the present application will be apparent from the following detailed description, or may be learned in part by the practice of the application.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the application.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the application and together with the description, serve to explain the principles of the application. It is apparent that the drawings in the following description are only some embodiments of the present application, and that other drawings may be obtained from these drawings without inventive effort for a person of ordinary skill in the art.
Fig. 1 is a schematic flow chart of a light emitting chip transferring method according to an embodiment of the present application;
fig. 2 is a schematic structural diagram of a deformation memory material layer in a normal light emitting chip, a non-light emitting chip and an abnormal light emitting chip in a light emitting chip transferring process according to an embodiment of the present application;
fig. 3 is a schematic structural diagram illustrating transferring a light emitting chip onto a first substrate according to an embodiment of the present disclosure;
fig. 4 is a schematic structural diagram illustrating alignment of a first substrate and a growth substrate according to an embodiment of the present disclosure;
FIG. 5 is a schematic diagram showing a structure of an epitaxial layer formed by a deformation memory material layer according to an embodiment of the present disclosure;
fig. 6 is a schematic structural diagram of a clamping member clamping a deformation memory material layer according to an embodiment of the present application;
fig. 7 is a schematic structural diagram of a second substrate according to an embodiment of the present application to form a second connection member and a first connection member;
fig. 8 is a schematic structural diagram of a second connecting member provided in the first embodiment of the present application on one side of the first connecting member;
FIG. 9 is a schematic diagram showing the alignment of the second and first connectors with the deformation memory material layer and the epitaxial layer in FIG. 8;
FIG. 10 is a schematic view of a second connector according to an embodiment of the present disclosure surrounding one side of a first connector;
FIG. 11 is a schematic diagram showing the alignment of the second and first connectors with the deformation memory material layer and the epitaxial layer in FIG. 10;
FIG. 12 is a schematic view showing a structure of a first connecting member surrounding one side of a second connecting member according to an embodiment of the present disclosure;
FIG. 13 is a schematic diagram showing the alignment of the second and first connectors with the deformation memory material layer and the epitaxial layer in FIG. 12;
FIG. 14 is a schematic flow chart of a process for removing a deformation memory material layer and a first connecting member by photolithography according to an embodiment of the present application;
fig. 15 is a schematic structural diagram illustrating a driving back plate with multiple groups of light emitting chips formed thereon according to a first embodiment or a second embodiment of the present application.
Reference numerals illustrate:
10. a first substrate; 11. a transient substrate; 12. an adhesive layer; 21. an electrode; 22. an epitaxial layer; 30. a deformation memory material layer; 31. a connection part; 32. a deformation section; 40. growing a substrate; 50. a clamping piece; 60. a second substrate; 70. a fixing unit; 71. a first connector; 711. a spacer hole; 712. a deformation chamber; 72. a second connector; 80. a drive back plate; 81. binding area.
Detailed Description
Example embodiments will now be described more fully with reference to the accompanying drawings. However, the exemplary embodiments may be embodied in many forms and should not be construed as limited to the examples set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of the example embodiments to those skilled in the art.
In this application, the terms "first," "second," and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more such feature. In the description of the present application, the meaning of "a plurality" is two or more, unless explicitly defined otherwise.
In this application, unless explicitly stated and limited otherwise, the terms "mounted," "connected," and the like are to be construed broadly, and may be, for example, fixedly attached, detachably attached, or integrally formed; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communicated with the inside of two elements or the interaction relationship of the two elements. The specific meaning of the terms in this application will be understood by those of ordinary skill in the art as the case may be.
Furthermore, the described features, structures, or characteristics may be combined in any suitable manner in one or more embodiments. In the following description, numerous specific details are provided to give a thorough understanding of embodiments of the present application. One skilled in the relevant art will recognize, however, that the aspects of the application can be practiced without one or more of the specific details, or with other methods, components, devices, steps, etc. In other instances, well-known methods, devices, implementations, or operations are not shown or described in detail to avoid obscuring aspects of the application.
Example 1
Referring to fig. 1 and 2, a first embodiment of the present application provides a light emitting chip transferring method, which can screen non-light emitting chips and abnormal light emitting chips, and screen the transferred light emitting chips in advance, so as to ensure the light emitting effect of the LED light emitting chips.
Referring to fig. 1, the light emitting chip transfer method includes the steps of:
s100, providing a first substrate 10, wherein a plurality of groups of light emitting chips are arranged on the first substrate 10, each group of light emitting chips comprises an electrode 21, an epitaxial layer 22 and a deformation memory material layer 30 which are sequentially stacked, the deformation memory material layer 30 is arranged on one side, far away from the electrode 21, of the epitaxial layer 22, and the deformation memory material layer 30 is in a first form.
The first substrate 10 includes a transient substrate 11 and an adhesive layer 12, the transient substrate 11 may be made of glass, sapphire or quartz, and the adhesive layer 12 is formed on the transient substrate 11.
It should be understood that, referring to fig. 3 and 4, when transferring the plurality of sets of light emitting chips onto the first substrate 10, further includes:
s101, a growth substrate 40 is provided.
A plurality of groups of light emitting chips are grown on the growth substrate 40, and the step of growing the light emitting chips comprises the steps of growing an epitaxial layer 22 on a sapphire substrate by adopting a Metal Organic Chemical Vapor Deposition (MOCVD) mode, and then growing the plurality of groups of LED light emitting chips through processes such as yellow light, film coating, etching and the like; the electrode 21 of the LED light-emitting chip is arranged on one side of the epitaxial layer 22 away from the sapphire substrate.
S102, providing the first substrate 10.
S103, aligning the growth substrate 40 and the first substrate 10.
Wherein the electrode 21 of the LED light emitting chip on the growth substrate 40 is inserted into the adhesive layer 12 on the first substrate 10, and a portion of the epitaxial layer 22 is inserted into the adhesive layer 12.
S104, the growth substrate 40 is removed to transfer the light emitting chip onto the first substrate 10.
It will be appreciated that the transfer mode of bonding the LED light emitting chips by the bonding layer 12 is simpler and the electrodes 21 and the epitaxial layers 22 of the light emitting chips can be protected.
S105, a deformation memory material layer 30 is formed on the epitaxial layer 22 of the light emitting chip.
Wherein a layer 30 of deformation memory material is formed on the side of the epitaxial layer 22 remote from the adhesive layer 12, as shown in fig. 5.
The LED light emitting chip of the growth substrate 40 can be transferred to the first substrate 10 by the adhesive layer 12 on the first substrate 10, so that the transfer of the LED light emitting chip is more convenient. The bonding layer 12 may be a resolvable adhesive, for example, a photo-resolvable adhesive or a thermal resolvable adhesive, so that the LED light emitting chip can be more conveniently taken from the first substrate 10, and the LED light emitting chip cannot be remained on the electrode 21 of the LED light emitting chip, thereby ensuring the light emitting brightness of the LED light emitting chip. Then, a deformation memory material layer 30 is formed on the side of the epitaxial layer 22 away from the adhesive layer 12.
It should be noted that the deformation memory material layer 30 may be a temperature-sensitive material, that is, may be formed into different shapes according to different temperatures, and the deformation memory material layer 30 may be, but is not limited to, a titanium-nickel alloy, a copper-zinc alloy, an iron-based alloy, or the like.
In addition, the deformation memory material layer 30 may be other induction type materials, which are not limited herein.
Wherein the deformation memory material layer 30 includes a connecting portion 31 and a deformation portion 32 connected to each other, and when the deformation memory material layer 30 is in the first form, the deformation portion 32 is vertically disposed upwards; when the deformation memory material layer 30 is changed from the first shape to the second shape, the end of the deformation portion 32 away from the connecting portion 31 is bent to form a claw.
In the embodiment of the present application, the deformation portion 32 is perpendicular to the linear structure of the connection portion 31.
In some embodiments, the deformation 32 may also be designed obliquely to the connection 31; the deformation 32 may also be of curvilinear configuration.
In this embodiment, the connection portion 31 is connected to a side of the epitaxial layer 22 away from the adhesive layer 12, and the deformation portion 32 includes a first portion and a second portion that are disposed side by side and spaced apart from each other, where when the deformation memory material layer 30 is in the first configuration, the first portion and the second portion are both disposed vertically upwards, and the first portion and the second portion are both in a linear structure perpendicular to the connection portion 31; when the deformation memory material layer 30 is changed from the first shape to the second shape, the end of the first portion away from the connecting portion 31 and the end of the second portion away from the connecting portion 31 are respectively bent in directions away from each other to form the claw.
In the embodiment of the present application, referring to fig. 2 and 5, the first form is in an inverted "T" shape; when the first shape is changed from the second shape to the first shape, the deformation portion 32 is gradually bent toward the connection portion 31, so that the deformation portion 32 forms a claw, and the second shape is in an "i" shape.
In some embodiments, the second shape may also be in a "Y" shape or a "individual" shape, which may be specifically designed according to different embodiments.
In the embodiment of the present application, the deformation memory material layer 30 is in a T shape at a temperature of less than or equal to 100 ℃; the deformation memory material layer 30 is in an I shape at a temperature of more than 100 ℃.
It will be appreciated that the shape of the deformation memory material layer 30 may be designed in different shapes according to different embodiments. The deformation temperature of the deformation memory material layer 30 may be set according to the characteristics of the LED light emitting chip or the transfer conditions.
Referring to fig. 6, in order to prevent the deformation memory material layer 30 from falling off the epitaxial layer 22 of the LED light emitting chip, so as to improve the stability of the deformation memory material layer 30 on the epitaxial layer 22, a clamping piece 50 is further disposed on the epitaxial layer 22, a clamping groove is formed between the clamping piece 50 and the epitaxial layer 22, and at least two opposite edges of the connecting portion 31 are clamped in the clamping groove.
In the embodiment of the present application, the clamping member 50 includes a first clamping block and a second clamping block, where the first clamping block and the epitaxial layer 22 and the second clamping block and the epitaxial layer 22 form a clamping groove, and the first clamping block and the second clamping block are respectively clamped at two opposite edges of the connecting portion 31. The clip 50 may be made of silicon oxide (SiOx), silicon nitride (SiNx), or aluminum oxide (Al 2O 3).
It can be understood that the first clamping block and the second clamping block are respectively clamped at two opposite edges of the connecting portion 31, so that the stability of the deformation memory material layer 30 can be improved.
S200, providing a second substrate 60.
The second substrate 60 may be made of glass, sapphire, quartz, or the like. The second substrate 60 has a plurality of groups of fixing units 70 thereon, each fixing unit 70 corresponds to a light emitting chip on the first substrate 10 one by one, and the fixing unit 70 includes a first connecting member 71 and a second connecting member 72 arranged side by side.
In the present embodiment, the second connector 72 is a thermal glue that is capable of thermally decomposing at a temperature. As shown in fig. 7 to 12, the manufacturing of the fixing unit 70 includes the steps of:
s201, a layer of pyrolytic glue layer is coated on the second substrate 60, and photoetching treatment is carried out on the pyrolytic glue layer to obtain the second connecting piece 72.
The adhesion force of the pyrolytic adhesive layer can be changed along with the change of temperature, the adhesion force of the pyrolytic adhesive layer can be controlled through the temperature according to the requirement of the real-time transfer process on the adhesion force of the LED light-emitting chip, and then the transfer efficiency and the transfer yield of the LED light-emitting chip can be improved through the tight combination of the pyrolytic adhesive layer and the LED light-emitting chip. In addition, when the pyrolytic adhesive layer reaches a certain temperature, the pyrolytic adhesive layer is decomposed; the decomposition temperature of the pyrolytic gel layer may be set according to the characteristics of the LED light emitting chip or transfer conditions, for example, in the embodiment of the present application, the pyrolytic gel layer may decompose at a temperature above 70 ℃.
S202, the first connector 71 is formed on the second substrate 60.
A film of silicon oxide (SiOx), silicon nitride (SiNx), aluminum oxide (Al 2O 3), or the like is coated on the second substrate 60, and then patterned by photolithography to form the first connection member 71, and the film is washed by a solvent (e.g., a photoresist stripper) to remove the organic matters.
It should be noted that, since the second connecting member 72 is easily decomposed by heat, in order to ensure the stability of the second connecting member 72, the first connecting member 71 may be manufactured before the second connecting member 72 is manufactured.
Furthermore, in some embodiments, the second connector 72 may also employ a thermally demagnetized magnetic element; photolysis elements which decompose under illumination can also be used; it is also possible to provide an adhesive element that loses tackiness by being heated.
Wherein, referring to fig. 8, the first connection member 71 may be located at one side of the second connection member 72; it is also possible that the second connection member 72 is arranged around the first connection member 71, see fig. 10; it is also possible that the first connection member 71 is arranged around the second connection member 72, see fig. 12.
It will be appreciated that the second connecting member 72 is disposed around the first connecting member 71, so that the LED light emitting chip is prevented from tilting when being transferred from the first substrate 10 to the second substrate 60, and stability of the LED light emitting chip is ensured.
In this embodiment, the first connecting piece 71 includes a first connecting block and a second connecting block, where the first connecting block and the second connecting block are both in an "L" shape, that is, the ends of the first connecting block and the second connecting block away from the second substrate 60 are bent in directions close to each other to form a fastening portion, a spacing hole 711 is formed between the fastening portion of the first connecting block and the fastening portion of the second connecting block, a fastening slot is formed by the fastening portion of the first connecting block, the fastening portion of the second connecting block, and the second substrate 60, the fastening slot has a spacing hole 711 and a deformation chamber 712, and the spacing hole 711 communicates the deformation chamber 712 with the outside.
In addition, the first connection block and the second connection block form a clamping part at a side far away from the second substrate 60, and when the deformation memory material layer 30 is inserted into the deformation chamber 712 and the deformation memory material layer 30 is in the second form, the clamping jaw is clamped with the clamping part.
S300, referring to fig. 9, 11 or 13, the first substrate 10 and the second substrate 60 are aligned, so that the second connection member 72 is connected to the epitaxial layer 22, and the deformation memory material layer 30 in the first configuration is aligned and inserted with the first connection member 71.
S400, the first substrate 10 is removed to transfer the light emitting chip onto the second substrate 60.
Wherein, during the alignment process of the first substrate 10 and the second substrate 60, the second connection member 72 on the second substrate 60 is adhered to the epitaxial layer 22 on the light emitting chip, and the LED light emitting chip is adhered from the first substrate 10 by using the adhesion force of the thermal decomposition glue of the second connection member 72.
In addition, in the alignment process of the first substrate 10 and the second substrate 60, the deformation memory material layer 30 on the first substrate 10 is inserted into the deformation chamber 712 through the interval hole 711 in the first form. When a certain temperature is reached, the end of the deformation portion 32 away from the connecting portion 31 is bent toward the engaging portion of the first connecting block and the second connecting block to form a claw engaged with the engaging portion.
In the present embodiment, the first and second portions are inserted into the deformation chamber 712 through the spacing holes 711 in the first configuration; when a certain temperature is reached, the first portion and the second portion in the deformation memory material layer 30 are bent in the deformation chamber 712 in a direction away from each other to form a claw, and the claw is clamped with the clamping portion of the first connecting block and the clamping portion of the second connecting block, so that the deformation memory material layer 30 is fixedly connected with the first connecting piece 71.
It should be noted that the thickness of the second connection member 72 is greater than the thickness of the first connection member 71, so as to prevent the first connection member 71 from contacting the epitaxial layer 22 and protect the epitaxial layer 22. In addition, the thickness of the second connecting member 72 is greater than or equal to the thickness of the deformation memory material layer 30 in the first configuration, so as to avoid collision between the deformation memory material layer 30 and the second substrate 60, and ensure the integrity of the deformation memory material layer 30.
In addition, when the first substrate 10 and the second substrate 60 are aligned so that the second connection member 72 is connected to the epitaxial layer 22, the first connection member 71 is located on a side of the clamping member 50 away from the epitaxial layer 22 and is in contact with or spaced apart from the clamping member 50.
In the embodiment of the present application, the thickness of the second connecting member 72 is equal to the thickness of the deformation memory material layer 30 in the first form, and a gap is left between the first connecting member 71 and the clamping member 50, so that the sum of the thicknesses of the first connecting member 71 and the clamping member 50 is lower than the thickness of the second connecting member 72, the adhesion effect of the second connecting member 72 and the epitaxial layer 22 is ensured, and the light emitting chip and the deformation memory material layer 30 can be transferred from the first substrate 10 to the second substrate 60.
S500, performing alignment treatment on the second substrate 60 with the light emitting chip transferred and the driving backboard 80, and connecting the electrode 21 of the light emitting chip with the binding area 81 of the driving backboard 80;
wherein, the plurality of groups of binding areas 81 on the driving back plate 80, each group of binding areas 81 includes a first binding point and a second binding point, and the first binding point and the second binding point are in one-to-one correspondence with the first electrode 21 and the second electrode 21 on the light emitting chip. The driving back plate 80 is heated to melt the bonding metal of the bonding region 81 so that the electrode 21 is bonded with the bonding region 81.
In the embodiment of the present application, the binding metal of the binding region 81 may be a metal such as indium (In)/tin (Sn), and may be melted when heated.
After the driving back plate 80 is heated, the electrode 21 of the light emitting chip can be more easily pressed into the binding region 81, so that the light emitting chip can be lighted.
S600, referring to fig. 15, a lighting test is performed on the light emitting chip using the driving back plate 80 to determine the light emitting state of the light emitting chip.
It will be appreciated that when the light emitting chip is turned on, the light emitting chip generates heat, and when the heat generated by the light emitting chip reaches the decomposition temperature of the second connection member 72 (thermal adhesive), the epitaxial layer 22 of the light emitting chip is separated from the second substrate 60.
In addition, the temperature at which the second connecting member 72 is decomposed should be less than the temperature at which the deformation memory material layer 30 changes to the second shape, so as to avoid deformation of the deformation memory material layer 30 in the deformation chamber 712, so that the light emitting chip and the second substrate 60 can be separated by heating, thereby improving the separation effect, and detecting abnormal or abnormal light emitting chips.
In the embodiment of the application, the heating temperature of the LED light-emitting chip for normal light emission is about 80 ℃, the thermal decomposition temperature of the second connecting piece 72 is greater than 70 ℃, and the temperature of the deformation memory material layer 30 from the first form to the second form is greater than 100 ℃. That is, when the LED light emitting chip emits light normally, the generated temperature can decompose the second connecting member 72 without deforming the deformation memory material layer 30 in the deformation chamber 712, so that the light emitting chip is separated from the second substrate 60, and the normal light emitting chip is not taken away when the second substrate 60 is removed.
For example, referring to fig. 2, when the normal light emitting chip is lighted, the heat generated by the light emitting chip breaks down the second connection member 72 between the second substrate 60 and the epitaxial layer 22, so that the adhesion connection between the light emitting chip and the second substrate 60 is released, and the heat generated by the light emitting chip is insufficient to deform the deformation memory material layer 30 at this time; that is, in the first configuration of the deformation memory material layer 30, the deformation portion 32 is perpendicular to the connection portion 31, and when the second substrate 60 is removed, the connection portion 31 is removed from the spacing hole 711, and the second substrate 60 is separated from the light emitting chip with the first connection member 71. For a light emitting chip that does not emit light; the light-emitting chip which does not emit light does not generate heat, so that the second connecting piece 72 on the epitaxial layer 22 is not decomposed, the light-emitting chip is also in adsorption connection with the second substrate 60, and the light-emitting chip is removed from the driving backboard 80 together through the second connecting piece 72 when the second substrate 60 is removed; further, since the temperature does not reach the condition that the deformation memory material layer 30 is changed to the second form, the connection portion 31 of the deformation memory material layer 30 is perpendicular to the deformation portion 32 and is not engaged with the engagement portion of the first connection block and the engagement portion of the second connection block. For the light emitting chip with abnormal light emission, the heat emitted by the light emitting chip is higher than the heat emitted by normal light emission, so that the second connecting piece 72 is decomposed, and the deformation memory material layer 30 in the deformation chamber 712 is changed from the first shape to the second shape, so that the first part and the second part of the deformation part 32 are bent in the direction away from each other, and further, the clamping jaws are respectively connected with the clamping part of the first connecting block and the clamping part of the second connecting block in a clamping manner, so that the deformation memory material layer 30 is clamped with the first connecting piece 71, and when the second substrate 60 is removed, the light emitting chip is removed from the driving backboard 80 through the first connecting piece 71 and the deformation memory material layer 30.
In addition, after the lighting test is completed, the light emitting chip transfer method further includes:
s700, removing the second substrate 60;
after the abnormal and non-light emitting chips are removed, the corresponding light emitting chips may be removed from the growth substrate 40 according to the removed positions, and then transferred to the driving back plate 80 in the above manner, and then whether the light emitting chips are normally lighted is judged according to the above detection method. The light emitting chips may be transferred by transferring one light emitting chip on the second substrate 60. Therefore, the light emitting chips on the driving backboard 80 are all light emitting chips which emit light normally, and the light emitting efficiency of the driving backboard 80 is further ensured.
By screening out abnormal and non-luminous chips, repairing of luminous chips on the driving backboard 80 is avoided, the integrity of the driving backboard 80 is ensured, and the luminous brightness of the driving backboard 80 is also ensured.
It should be noted that, when the second substrate 60 carries away the non-light emitting chip and the light emitting chip with abnormal light emission, there may be a binding area 81 carrying away a certain amount, which affects the connection between the light emitting chip electrode 21 and the driving back plate 80, so the light emitting chip transferring method further includes making indium (In)/tin (Sn) metal on the electrode 21 of the LED light emitting chip when the second substrate 60 transfers a new LED light emitting chip; it is also possible to spot solder paste on the corresponding bonding areas 81 before transferring a new LED light emitting chip. In this way, the connection tightness between the light emitting chip electrode 21 and the driving back plate 80 can be improved, thereby ensuring the light emitting brightness of the light emitting chip.
S800, referring to fig. 14 and 15, the deformation memory material layer 30 and the clip 50 on the epitaxial layer 22 are removed by photolithography.
After the second substrate 60 is removed, the deformation memory material layer 30 and the clamping member 50 for fixing the deformation memory material layer 30 are fixed on the epitaxial layer 22, so that the deformation memory material layer 30 and the clamping member 50 on the light emitting chip are removed by photolithography in order to avoid influencing the light emission of the light emitting chip.
It is understood that the deformation memory material layer 30 and the clamping member 50 on the LED light emitting chips may be removed after all the LED light emitting chips are transferred, or the deformation memory material layer 30 and the clamping member 50 may be removed once after transferring. After all the LED light emitting chips are transferred, the deformation memory material layer 30 and the clamping piece 50 are removed, the removing mode is simpler, and the cost is lower.
In summary, according to the light emitting chip transferring method of the embodiment of the application, when a large amount of transfer is performed, abnormal and non-light emitting LED light emitting chips can be screened, repairing of the LED light emitting chips on the driving backboard 80 is avoided, a circuit on the driving backboard 80 is ensured, and then light emitting brightness of the LED light emitting chips is ensured.
Example two
In a second embodiment, as shown in fig. 15, a display panel is provided, where the display panel includes a driving back plate 80 and a plurality of groups of light emitting chips, at least some of the groups of light emitting chips are transferred to the driving back plate 80 by the light emitting chip transfer method of the first embodiment. For specific details of the transfer process of the LED light emitting chip, please refer to the description of the foregoing embodiment, and the details are not repeated here.
In the embodiment of the present application, the light emitting chips on the driving back plate 80 are all transferred by the light emitting chip transferring method in the first embodiment, so that the light emitting chips on the driving back plate 80 can be ensured to be LED light emitting chips which emit light normally, so as to ensure the display effect of the display panel.
In the description of the present specification, reference to the terms "some embodiments," "exemplary," and the like, means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present application. In this specification, schematic representations of the above terms are not necessarily directed to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, the different embodiments or examples described in this specification and the features of the different embodiments or examples may be combined and combined by those skilled in the art without contradiction.
While embodiments of the present application have been shown and described, it should be understood that the above embodiments are illustrative and not to be construed as limiting the application, and that variations, modifications, alternatives and variations may be made to the embodiments by one of ordinary skill in the art within the scope of the application, and therefore all changes and modifications that fall within the spirit and scope of the invention as defined by the claims and the specification of the application are intended to be covered thereby.

Claims (10)

1. A chip transfer method, comprising:
providing a first substrate, wherein a light-emitting chip is arranged on the first substrate, the light-emitting chip comprises an electrode, an epitaxial layer and a deformation memory material layer which are sequentially stacked, and the deformation memory material layer is in a first form;
providing a second substrate, wherein the second substrate is provided with a fixing unit corresponding to the light emitting chip, and the fixing unit comprises a first connecting piece and a second connecting piece which are arranged side by side;
performing alignment treatment on the first substrate and the second substrate so as to connect the second connecting piece with the epitaxial layer, and enabling the deformation memory material layer in the first form to be aligned and inserted with the first connecting piece;
removing the first substrate to transfer the light emitting chip onto the second substrate;
performing alignment treatment on the second substrate transferred with the light-emitting chip and the driving backboard, and connecting an electrode of the light-emitting chip with a binding area of the driving backboard;
performing lighting test on the light-emitting chip by using the driving backboard to determine the light-emitting state of the light-emitting chip;
when the light-emitting chip is in a normal light-emitting state, no connecting force exists between the second connecting piece and the epitaxial layer, and the deformation memory material layer is still in the first form; when the light-emitting chip is in an abnormal light-emitting state, the deformation memory material layer is deformed from the first shape to the second shape, and the deformation memory material layer in the second shape is clamped with the first connecting piece.
2. The chip transfer method according to claim 1, wherein the first connection member includes a first connection block and a second connection block disposed at a distance from each other, and ends of the first connection block and the second connection block away from the second substrate are bent in a direction toward each other to form engaging portions, and a spacing hole is formed between the engaging portions of the first connection block and the second connection block;
the deformation memory material layer comprises a connecting part and a deformation part which are connected with each other, the connecting part is connected with the epitaxial layer, the deformation part is arranged on one side of the connecting part, which is far away from the epitaxial layer, and when the deformation memory material layer is in the first form, the deformation part is in a straight line shape capable of penetrating through the interval hole; when the deformation memory material layer is in the second form, the end part of the deformation part, which is far away from the connecting part, is bent towards the clamping part to form a claw clamped with the clamping part.
3. The chip transfer method according to claim 2, wherein the deformation portion includes a first portion and a second portion disposed side by side and at a distance from each other, wherein:
when the deformation memory material layer is in the first form, the first part and the second part are both linear types perpendicular to the connecting part;
when the deformation memory material layer is in the second form, the ends of the first part and the second part, which are far away from the connecting part, are bent in the direction far away from each other to form the clamping jaw, the clamping jaw of the first part is clamped with the clamping part of the first connecting block, and the clamping jaw of the second part is clamped with the clamping part of the second connecting block.
4. The chip transfer method according to claim 3, wherein the light emitting chip further comprises a clamping member disposed on the epitaxial layer, a clamping groove is formed between the clamping member and the epitaxial layer, and at least two opposite edges of the connecting portion are clamped in the clamping groove.
5. The method according to claim 4, wherein the thickness of the second connection member is greater than the thickness of the first connection member, and the first connection member is located at a side of the clamping member away from the epitaxial layer and is in contact with or spaced apart from the clamping member when the first substrate and the second substrate are aligned so that the second connection member is connected to the epitaxial layer.
6. The chip transfer method according to any one of claims 1 to 5, wherein forming the first connection member and the second connection member on the second substrate comprises the steps of:
coating a layer of pyrolytic glue layer on the second substrate, and processing the pyrolytic glue layer to form the second connecting piece;
the first connection member is formed on the second substrate.
7. The chip transfer method of claim 6, wherein the first connector is located on one side of the second connector; or (b)
The second connector is disposed around the first connector.
8. The chip transfer method according to claim 1, wherein before forming the deformation memory material layer on the first substrate, the chip transfer method further comprises:
providing a growth substrate, wherein the growth substrate is grown with the light-emitting chip;
providing the first substrate, wherein the first substrate is provided with an adhesive layer;
aligning the growth substrate and the first substrate so as to bond the light-emitting chip and the bonding layer;
removing the growth substrate to transfer the light emitting chip onto the first substrate;
and forming the deformation memory material layer on the epitaxial layer of the light-emitting chip.
9. The chip transfer method according to claim 8, wherein after completion of the lighting test, the chip transfer method further comprises:
removing the second substrate;
and removing the deformation memory material layer and the clamping piece on the epitaxial layer.
10. A display panel comprising a drive back plane and a plurality of sets of chips, at least part of the plurality of sets of chips being transferred to the drive back plane by a chip transfer method according to any one of claims 1-9.
CN202310357712.8A 2023-03-30 2023-03-30 Chip transfer method and display panel Active CN116314488B (en)

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Publication number Priority date Publication date Assignee Title
CN110660717A (en) * 2018-06-30 2020-01-07 江西兆驰半导体有限公司 Transfer device and transfer method for transferring micro light-emitting diode
CN112289908A (en) * 2020-09-11 2021-01-29 罗化芯显示科技开发(江苏)有限公司 Method for transferring mass of mini-LED chip
CN114864473A (en) * 2022-05-12 2022-08-05 华中科技大学 Double-laser combined projection proximity type mass transfer device and forming method
WO2022171102A1 (en) * 2021-02-09 2022-08-18 南昌广恒电子中心(有限合伙) Transfer device, transfer method and display apparatus

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110660717A (en) * 2018-06-30 2020-01-07 江西兆驰半导体有限公司 Transfer device and transfer method for transferring micro light-emitting diode
CN112289908A (en) * 2020-09-11 2021-01-29 罗化芯显示科技开发(江苏)有限公司 Method for transferring mass of mini-LED chip
WO2022171102A1 (en) * 2021-02-09 2022-08-18 南昌广恒电子中心(有限合伙) Transfer device, transfer method and display apparatus
CN114864473A (en) * 2022-05-12 2022-08-05 华中科技大学 Double-laser combined projection proximity type mass transfer device and forming method

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