CN1162907C - Memory module with laminated chips and its making process - Google Patents
Memory module with laminated chips and its making process Download PDFInfo
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- CN1162907C CN1162907C CNB011117133A CN01111713A CN1162907C CN 1162907 C CN1162907 C CN 1162907C CN B011117133 A CNB011117133 A CN B011117133A CN 01111713 A CN01111713 A CN 01111713A CN 1162907 C CN1162907 C CN 1162907C
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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Abstract
The present invention provides a memory module. A first printed circuit board and a second printed circuit board are connected with pins at two sides of a first standard storage integrated circuit and a second standard storage integrated circuit to form a stand storage integrated circuit group with laminated chips, and the first standard storage integrated circuit and the second standard storage integrated circuit are laminated. The present invention also provides a manufacturing method of a storage integrated circuit group. The pins of a plurality of standard storage integrated circuits are welded on a printed circuit board to form the memory module with the laminated chips through a surface binding technique, the manufacturing cost of the memory module is reduced, and product quality is increased.
Description
Technical field
The present invention relates to a kind of memory module and manufacture method thereof, ordered memory module and the manufacture method thereof of the particularly a kind of JEDEC of meeting association with high power capacity with laminated chips.
Background technology
Memory module is that a plurality of dynamic random access memory (DRAM) chips welding forms on a printed circuit board (PCB).It is used, the memory module of high power capacity particularly, the more necessary spare part of high-tech product and to influence the performance of system very big.For example, each server and personal computer all will be installed enough random access memory, and all being how much multiples from the capacity to the required random access memory 256MB of server, 512MB or 1GB of the required random access memory 16MB of early stage personal computer, 32MB or 64MB increases.
The heap(ed) capacity of standard memory integrated circuit is the packing of 256Mb, TSOP 54Pin at present.Yet,, need 32 standard memory integrated circuits if will form the memory module of 1GB.As the memory module of reference design, not only the space of system host can't hold and memory module and module by signal cabling also will exceed the ordered specification of JEDEC association and influence usefulness.If the 256MB memory will be increased to the 512Mb memory,, must become the memory module of 128M4 or 64M * 8 just can reach by lamination with the memory module of 64M * 4.That is the IC data and the volume of memory module all will double, and cause the difficulty of host design and manufacturing simultaneously.
At foregoing problems, the capacity that increases dynamic random access memory chip is the simplest solution, with aforementioned example, the memory module of available equal number and volume reaches if the capacity of dynamic random access memory chip rises to 128M4 or 64M * 8.But the capacity of dynamic random access memory chip increases really not soly to be finished easily and relates to the manufacture method of chip and the change of design.Industrial quarters has also developed the solution of another simple possible, and also the standard storage integrated circuit that is about to more than is connected in parallel, and lamination becomes the memory module that capacity increases by this.
The existing following dual mode of memory module with laminated chips: 1. the pin with the standard memory integrated circuit directly welds the formation lamination; And 2. chips with memory integrated circuit (die) connect in the wire jumper mode.Its relevant known technology has United States Patent (USP) the 5th, 910, and 685,5,708,298,5,334,875 and 5,028, No. 986 etc. the patent case discloses.But first kind of mode is because the standard memory integrated circuit has 54 pins and narrow at interval and make direct welding processing difficulty, and the second way is not that the general memory module manufacturer reaches easily then because relate to the manufacture method of chip and the change of design.
Summary of the invention
Main purpose of the present invention provides a kind of memory module, and its laminated chips with simplified structure is by this to reduce the manufacturing cost of memory module.
Another object of the present invention is providing a kind of manufacture method of memory module, and it is by the surface adhering technology pin of standard memory integrated circuit to be welded on a printed circuit board (PCB) to form and have the memory module of laminated chips.
Another purpose of the present invention is providing a kind of memory module, and its both sides that two standard memory integrated circuits are welded on specially designed printed circuit board (PCB) in manufacture process are to form laminated chips.Therefore, memory module can be carried out surface adhering in the both sides of printed circuit board (PCB) respectively, each manufacture process of a plurality of memory modules is all finished at same printed circuit board (PCB) during fabrication, and the manufacture process of consistent flow process can provide a kind of in fact mass producible manufacture method.
A further object of the present invention is providing a kind of memory module, and wherein two standard memory integrated circuits both sides of being welded on a printed circuit board (PCB) respectively have the memory module of laminated chips with formation.Therefore, can guarantee that the contact of memory module firmly improves the yield of product.
For realizing purpose of the present invention, the invention provides a kind of memory module with laminated chips, this memory module has a plurality of standard storage integrated circuit groups and is formed on the substrate, and described standard storage integrated circuit group comprises: one first standard storage integrated circuit has a plurality of pins; One second standard storage integrated circuit has a plurality of pins and is connected with this first standard storage integrated circuit stack; And, first printed circuit board (PCB) and second printed circuit board (PCB), the both sides that are separately fixed at this second standard storage IC bond are in order to be electrically connected the relative pin of this first standard storage integrated circuit, form on the wherein said printed circuit board (PCB) a plurality of blind holes and through hole that should the standard storage IC bond, and described through hole connects the control signal wire of this first and second standard storage integrated circuit and the data wire pin that the described blind hole of address wire pin then intercepts first and second standard storage integrated circuit.
The present invention also provides a kind of manufacture method of standard storage integrated circuit group in addition, to be the first standard storage integrated circuit slightly be parallel printed circuit board (PCB) lamination and be connected on the one second standard storage integrated circuit and aforementioned printed circuit board (PCB) is formed on the printed circuit dish by a pair of this standard storage integrated circuit group, comprises the following steps: a plurality of these first standard storage integrated circuits are adhered on each self-corresponding this printed circuit board (PCB) of this printed circuit dish; Again this second standard storage integrated circuit is bonded in position corresponding on this printed circuit board (PCB); And, this standard storage integrated circuit group of finishing is separated from this printed circuit dish.
The present invention is because the existing problem of known technology, so the manufacture method that the cheap printed circuit board (PCB) of use cost replaces direct welding processing or chip also cooperates the manufacture method that in fact can produce in batches and this product can be produced in a large number with the difficulties such as change of design.
Description of drawings
Memory module and manufacture method thereof with laminated chips of the present invention, its plurality of advantages and feature will be further understood from following detailed description and accompanying drawing.
Fig. 1 is the stereogram of memory module of the present invention;
Fig. 2 is the three-dimensional structure diagram of standard memory integrated circuit group among Fig. 1;
Fig. 3 becomes the pin signal schematic representation of circuit for standard saveset among Fig. 2;
Fig. 4 is the structural representation of printed circuit dish of the present invention, and wherein Fig. 4 (a) is that stereogram, Fig. 4 (b) of printed circuit dish is the pin signal schematic representation of printed circuit board (PCB) for the printed circuit board stereogram Fig. 4 (c) in the printed circuit dish;
Fig. 5 is a memory module manufacturing process calcspar of the present invention; And,
Fig. 6 is the schematic diagram of manufacturing process memory module of the present invention, and wherein Fig. 6 (a) is that schematic diagram, Fig. 6 (c) that the first standard storage integrated circuit is welded to printed circuit board (PCB) is that the second standard storage integrated circuit is welded to the finish stereogram of schematic diagram Fig. 6 (d) of printed circuit board (PCB) for the printed circuit dish for end view, Fig. 6 (b) of printed circuit board (PCB).
Embodiment
With reference to Fig. 1, memory module 1 normally one is used for personal computer, the dynamic random access memory of mobile computer or server, memory module 1 can be Synchronous Dynamic Random Access Memory (SDRAM) specification, double logarithmic data transmission (DDR) specification or ram bus (RAMBus) specification, and comprise: a substrate 10, a plurality of standard storage integrated circuit groups 11 that are welded on the substrate 10, be formed on a plurality of golden fingers 12 of substrate 10 1 ora terminalis, location notch 13 and location hole 14, wherein each standard storage integrated circuit group 11 forms by the first standard storage integrated circuit 11a that is positioned at the top and by the second standard storage integrated circuit 11b lamination that is positioned at the below, golden finger 12 can with the interface port of main frame, for example: the Memory connector interface port, be electrically connected in order to transmit numerical data, location notch 13 and location hole 14 then cooperate with fixed memory module 1 on main frame with the Memory connector of main frame.
Fig. 2 description standard is stored the structure of integrated circuit bank 11.Standard storage integrated circuit group 11 is in fact connected the pin of the lamination first standard storage integrated circuit 11a and the second standard storage integrated circuit 11b both sides respectively by the first printed circuit board (PCB) 111a and the second printed circuit board (PCB) 111b, and preferably connected mode be to use the surface adhering technology (surface mount technology, SMT).It should be noted that, both sides and its width that the first printed circuit board (PCB) 111a and the second printed circuit board (PCB) 111b are formed on the second standard storage integrated circuit 11b pin are rough suitable with pin length standard storage integrated circuit 11a, can't increase the volume of laminated chips in fact and can reach and be equivalent to the effect of directly welding two standard storage integrated circuits so increase by the first printed circuit board (PCB) 111a and the second printed circuit board (PCB) 111b.Continuation is with reference to Fig. 3, it shows the pin signal schematic representation of the first standard storage integrated circuit 11a and the second standard storage integrated circuit 11b, existing standard storage integrated circuit has 54 pins that on average are positioned at the parallel both sides of body, wherein number the 5th, 11,44 and No. 50 DQ0, DQ2, DQ5 and DQ7 pin respectively other pin of representative data line then be control signal wire and address wire, hereinafter with reference to the pin numbering explanation first standard storage integrated circuit 11a of standard storage integrated circuit and the lamination syndeton of the second standard storage integrated circuit 11b.
A plurality of standard storage integrated circuit group 11 of the present invention is to make to finish on same printed circuit dish 20, as shown in Figure 4, printed circuit dish 20 comprises the first printed circuit board (PCB) 111a and the second printed circuit board (PCB) 111b of a plurality of pair of parallel, the wherein parallel pin of each printed circuit board (PCB) 111a and the equal corresponding standard storage integrated circuit of 111b.A plurality of first standard storage integrated circuit 11a adhere on printed circuit dish 20 each the self-corresponding first printed circuit board (PCB) 111a and the second printed circuit board (PCB) 111b, again the second standard storage integrated circuit 11b is bonded in the first printed circuit board (PCB) 111a and the second printed circuit board (PCB) 111b and goes up the manufacturing that standard storage integrated circuit group 11 just can be finished in corresponding position, about the detailed methods of fabrication of memory module 1, will be in hereinafter describing in detail.
With further reference to Fig. 4 (b) and Fig. 4 (c) structure of printed circuit board (PCB) 111a and 111b is described, wherein Fig. 4 (b) is the part enlarged drawing of the first printed circuit board (PCB) 111a and the second printed circuit board (PCB) 111b on the printed circuit dish 20.As shown in the figure, the width of the first printed circuit board (PCB) 111a and the second printed circuit board (PCB) 111b is rough suitable with the width standard storage IC bond.Because the structure of the first printed circuit board (PCB) 111a and second printed circuit board (PCB) 111b symmetry fully is identical, so will be only with the first printed circuit board (PCB) 111a explanation in following description.The first printed circuit board (PCB) 111a is for slightly being the double-sided printed-circuit board of elongated cuboid, put 27 points and a side joint pin of the corresponding standard storage integrated circuit in the position of each point thereon and have even row, wherein number the 5th and 11 be to form blind hole 114 other points then to form through hole 112.In addition, also form conductor wire 113 in the position that the first printed circuit board (PCB) 111a has a through hole 112 to be electrically connected the both sides of through hole 112.Similarly, the 44th of the second printed circuit board (PCB) 111b the and 50 the both sides that other points of blind hole 114 then form through hole 112 and through hole 112 that also form have conductor wire 113 too.When the first standard storage integrated circuit 11a and the second standard storage integrated circuit 11b link together by the first printed circuit board (PCB) 111a and the second printed circuit board (PCB) 111b lamination, except numbering DQ0, DQ2, DQ5 and DQ7 data wire pin, the pin of two other control signal wires of standard storage integrated circuit and address wire then is electrically connected fully.It should be noted that the present invention replaces the direct lamination welding of known technology or changes chip capacity with the printed circuit board (PCB) of simplifying at standard storage integrated circuit (IC) chip lamination, its reason is the stability that reduces manufacturing cost and increase product.
Fig. 5 and Fig. 6 further specify the detailed methods of fabrication of standard storage integrated circuit group 11.The present invention is the automation of reaching manufacture method, uses printed circuit dish 20 as shown in Figure 4, and this printed circuit dish 20 has how formed thereon to the first printed circuit board (PCB) 111a and the second printed circuit board (PCB) 111b.Each is equivalent to the position of pin to the width of the rough overgauge of the spacing of the first printed circuit board (PCB) 111a and second printed circuit board (PCB) 111b storage integrated circuit.So, the surface adhering technology of standard storage integrated circuit can directly be finished on printed circuit dish 20.With the present invention is example, and a plurality of standard storage integrated circuit groups 11 can be finished in same printed circuit dish 20.In addition, in order to reach the automation of manufacture method, printed circuit dish 20 also comprises and is formed on an anchor point 21 and is formed on the first printed circuit board (PCB) 111a and transversal 115 that the second printed circuit board (PCB) 111b two falls.So, in chip adhesion step, all can separate with printed circuit dish 20 via transversal 115 by the standard storage integrated circuit group 11 that anchor point 21 machines the unlikely skew of standard storage integrated circuit Working position.
Fig. 5 and Fig. 6 illustrate the manufacturing process of standard memory circuit bank 11 of the present invention, and wherein Fig. 6 (a) is that end view, Fig. 6 (b) of the first printed circuit board (PCB) 111a are that schematic diagram, Fig. 6 (c) that the first standard storage integrated circuit 11a is welded to the first printed circuit board (PCB) 111a are that the second standard storage integrated circuit is welded to the schematic diagram of the first printed circuit board (PCB) 111a and Fig. 6 (d) is the stereogram of printed circuit dish 20.In step 32, at first printed circuit dish 20 is placed on the machining machine and tool according to anchor point 21, then in step 33, more a plurality of first standard storage integrated circuit 11a are welded to the first printed circuit board (PCB) 111a with the surface adhering technology, shown in Fig. 6 (b), in step 34, again the second standard storage integrated circuit 11b is welded to the first printed circuit board (PCB) 111a with the surface adhering technology, shown in Fig. 6 (c), use formation and have the standard storage integrated circuit group 11 of laminated chips.The finished product of printed circuit dish 20 has a plurality of standard storage integrated circuit groups 11, shown in Fig. 6 (d), for validation criteria is stored the welded condition of integrated circuit bank 11, can in step 35, directly detect by this to understand the welded condition of each standard storage integrated circuit group 11 with whole printed circuit dish 20.So, not only can save the testing time, and significantly improve testing efficiency.Afterwards, will not remove and keep in repair again in step 36 by the standard storage integrated circuit group 11 of test.Because printed circuit dish 20 once can comprise 20 to 50 pairs of printed circuit board (PCB)s, so manufacture method of the present invention can once be finished 30 to 50 efficient that have the standard storage integrated circuit group 11 of laminated chips and significantly increase manufacturing simultaneously.20 on the printed circuit dish that passes through after tested cuts in step 37, because printed circuit dish 20 has been reserved transversal 115, so cutting process is not easy to damage standard storage integrated circuit group 11.At last, in step 38, a plurality of standard storage integrated circuit groups 11 are welded to the memory module 1 that has laminated chips on the substrate 10 with formation.
Those skilled in the art can clearly understand after describing preferred embodiment of the present invention in detail, is not breaking away under the scope of the said claims and the spirit, can carry out various variations and change, and the present invention is not subject to the execution mode of the embodiment of specification yet.
The present invention has many good characteristics in sum, and solves the defective of known technology in practicality and inconvenience, proposes effective solution and finishes practical and reliable device and manufacture method.
Claims (9)
1. memory module with laminated chips, this memory module has a plurality of standard storage integrated circuit groups and is formed on the substrate, and described standard storage integrated circuit group comprises:
One first standard storage integrated circuit has a plurality of pins;
One second standard storage integrated circuit has a plurality of pins and is connected with this first standard storage collective circuit lamination; And,
First printed circuit board (PCB) and second printed circuit board (PCB), the both sides that are separately fixed at this second standard storage IC bond be in order to being electrically connected the relative pin of this first standard storage integrated circuit,
Form on the wherein said printed circuit board (PCB) a plurality of blind holes and through hole that should the standard storage IC bond, and described through hole connects the control signal wire of this first and second standard storage integrated circuit and the data wire pin that the described blind hole of address wire pin then intercepts first and second standard storage integrated circuit.
2. the memory module with laminated chips as claimed in claim 1, wherein said printed circuit board (PCB) also form conductor wire to be electrically connected the both sides of through hole.
3. standard storage integrated circuit group, it is to be used for a memory module, comprising:
One first standard storage integrated circuit has a plurality of pins;
One second standard storage integrated circuit has a plurality of pins and is connected with this first standard storage integrated circuit stack; And,
One printed circuit board (PCB), form on it a plurality of blind holes and through hole that should the standard storage IC bond, and aforementioned through hole connects the control signal wire of this first and second standard storage integrated circuit and data wire pin that the aforementioned blind hole of address wire pin then intercepts first and second standard storage integrated circuit is used the relative pin that is fixed on this second standard storage integrated circuit and is electrically connected this first standard storage integrated circuit.
4. standard storage integrated circuit group as claimed in claim 3, wherein said printed circuit board (PCB) also form conductor wire to be electrically connected the both sides of through hole.
5. the manufacture method of a standard storage integrated circuit group, to be the first standard storage integrated circuit slightly be parallel printed circuit board (PCB) lamination and be connected on the one second standard storage integrated circuit and aforementioned printed circuit board (PCB) is formed on the printed circuit dish by a pair of this standard storage integrated circuit group, comprises the following steps:
A plurality of these first standard storage integrated circuits are adhered on each self-corresponding this printed circuit board (PCB) of this printed circuit dish;
Again this second standard storage integrated circuit is bonded in position corresponding on this printed circuit board (PCB); And,
This standard storage integrated circuit group of finishing is separated from this printed circuit dish.
6. the manufacture method of standard storage integrated circuit group as claimed in claim 5 wherein also comprises directly and detecting by this to understand the welded condition of each this standard storage integrated circuit group with whole this printed circuit dish.
7. the manufacture method of standard storage integrated circuit group as claimed in claim 5 comprises also that wherein a plurality of these standard storage integrated circuit assembly weldings receive the memory module that has laminated chips on the substrate with formation.
8. printed circuit dish, be to be used to make one to have the memory module of laminated chips, comprise and a plurality ofly a pair ofly slightly be parallel printed circuit board (PCB) and form thereon, form on it a plurality of blind holes and through hole that should the standard storage IC bond, and aforementioned through hole connects the control signal wire of this first and second standard storage integrated circuit and data wire pin that the described blind hole of address wire pin then intercepts first and second standard storage integrated circuit is used the relative pin that is fixed on this second standard storage integrated circuit and is electrically connected this first standard storage integrated circuit.
9. a kind of printed circuit dish as claimed in claim 8, wherein aforementioned printed circuit dish also is formed on the transversal of described printed circuit board (PCB) both sides.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB011117133A CN1162907C (en) | 2001-03-20 | 2001-03-20 | Memory module with laminated chips and its making process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB011117133A CN1162907C (en) | 2001-03-20 | 2001-03-20 | Memory module with laminated chips and its making process |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1375872A CN1375872A (en) | 2002-10-23 |
| CN1162907C true CN1162907C (en) | 2004-08-18 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB011117133A Expired - Fee Related CN1162907C (en) | 2001-03-20 | 2001-03-20 | Memory module with laminated chips and its making process |
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| Country | Link |
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| CN (1) | CN1162907C (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10062981B2 (en) | 2013-12-18 | 2018-08-28 | Intel Corporation | Ground routing device and method |
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2001
- 2001-03-20 CN CNB011117133A patent/CN1162907C/en not_active Expired - Fee Related
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| Publication number | Publication date |
|---|---|
| CN1375872A (en) | 2002-10-23 |
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Granted publication date: 20040818 |