CN116261237A - Film heating device and heating method - Google Patents
Film heating device and heating method Download PDFInfo
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- CN116261237A CN116261237A CN202310137095.0A CN202310137095A CN116261237A CN 116261237 A CN116261237 A CN 116261237A CN 202310137095 A CN202310137095 A CN 202310137095A CN 116261237 A CN116261237 A CN 116261237A
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B6/00—Heating by electric, magnetic or electromagnetic fields
- H05B6/64—Heating using microwaves
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B6/00—Heating by electric, magnetic or electromagnetic fields
- H05B6/64—Heating using microwaves
- H05B6/72—Radiators or antennas
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B6/00—Heating by electric, magnetic or electromagnetic fields
- H05B6/64—Heating using microwaves
- H05B6/80—Apparatus for specific applications
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Abstract
The invention relates to the technical field of film heating, in particular to a film heating device and a heating method, wherein the film heating device comprises a microwave radiation array layer and a coupling energy receiving layer which are oppositely arranged, the microwave radiation array layer consists of a plurality of radiation units which are closely arranged on the same plane and distributed in a regular array, and each radiation unit is provided with a coaxial feed port for feeding microwaves; the coupling energy receiving layer is used for receiving coupling energy, an attaching surface is arranged on one side of the coupling energy receiving layer, which faces the microwave radiation array layer, and the attaching surface can be used for attaching a film material to be heated. The heating device and the heating method can uniformly and effectively heat the lossy dielectric film, and have small volume and higher energy utilization rate.
Description
Technical Field
The invention relates to the technical field of film heating, in particular to a film heating device and a film heating method.
Background
Hot air heating is a heating method that is relatively commonly used when heating a film attached to a metal surface, and this way heat is transferred to the film from the outside to the inside in a heat conduction manner. However, because the film is heated by the hot air in an external-to-internal heating mode, the heating uniformity is poor, and meanwhile, the temperature of the current environment needs to be maintained for a long time in order to achieve the effect of uniform heating, so that the heating mode has the advantages of high energy consumption, long heating time, large volume of required equipment and difficulty in meeting the actual requirements of the heating effect.
The Chinese patent application with the document number of CN 114007292B discloses a microwave heating film device and a system, wherein the heating device comprises a rectangular waveguide and a compression ridge, the compression ridge is arranged in a cavity of the rectangular waveguide, a dielectric plate is arranged on the compression ridge, a gap is formed between the compression ridge and a film to be heated by separating, and electromagnetic waves pass through the gap after being compressed by the compression ridge; the rectangular waveguide is provided with a leakage prevention device, and the leakage prevention device absorbs/blocks leakage of electromagnetic waves in the cavity; a ventilation structure is arranged in the rectangular waveguide, moisture in the cavity is brought out of the cavity by the ventilation structure, and meanwhile, the film can be heated up in a mode of introducing hot air. The dielectric plate arranged on the T-shaped ridge waveguide changes the original electric field distribution in the waveguide, and the microwave can heat the lossy dielectric film attached to the metal surface. However, this heating method has a disadvantage in that it is limited by the waveguide structure, the input power of the waveguide is limited, and in addition, since the T-ridge waveguide is fed with microwaves from one side port, the uniformity is relatively poor. Accordingly, there remains a need in the art for an apparatus and method for uniformly and efficiently heating lossy dielectric films attached to metal surfaces.
Disclosure of Invention
In order to solve the technical problems, the invention aims to provide a thin film heating device and a heating method, which can uniformly and effectively heat a lossy dielectric thin film, and have small volume and high energy utilization rate so as to solve the defects in the prior art.
In order to achieve the technical effects, the invention adopts the following technical scheme:
in a first aspect, the present invention provides a thin film heating apparatus comprising:
the microwave radiation array layer consists of a plurality of radiation units which are closely arranged on the same plane and distributed in a regular array, and each radiation unit is provided with a coaxial feed port for feeding microwaves.
And the coupling energy receiving layer is arranged opposite to the microwave radiation array layer and used for receiving microwave coupling energy, and an attaching surface is arranged on one side of the coupling energy receiving layer facing the microwave radiation array layer and can be attached by a film material to be heated.
Further, the film heating device further comprises a heat preservation layer, wherein the heat preservation layer is arranged between the microwave radiation array layer and the coupling energy receiving layer, the heat preservation layer is provided with at least one first clinging side, and the first clinging side can be attached to the film material to be heated.
Preferably, the heat insulation layer further has a second close contact side, and the second close contact side can be attached to the microwave radiation array layer.
Further, the radiating unit comprises a dielectric substrate, and a metal ground and a metal patch which are respectively arranged at two sides of the dielectric substrate, the metal ground is arranged at one side far away from the coupling energy receiving layer, and the projection area of the metal ground is larger than that of the metal patch, and preferably, the dielectric substrate is preferably made of dielectric ceramic materials.
Further, to facilitate the input of microwave energy, the coaxial feed is disposed on one side of the metal ground and extends at least completely through the metal ground and the dielectric substrate.
Furthermore, the geometric center of the metal patch is provided with a slot structure penetrating the metal patch, preferably, the outer edge of the metal patch is in a regular shape, such as a rectangle, and the main purpose of the slot structure is to enable the coupling current generated by the radiating unit to generate a avoiding effect at the geometric center position so as to improve the common phenomenon of uneven heating with high middle temperature and low peripheral temperature, the shape and the size of the slot can be adjusted, and the final purpose is that when microwaves with certain frequency are input through the coaxial feed port, resonance can occur between the microwave radiation array layer and the coupling energy receiving layer.
Further, the coupled energy receiving layer is made of a high conductivity material entirely or at least in a portion near the microwave radiation array layer, and the conductivity of the high conductivity material layer is more than 10 3 S·m -1 . Preferably, the high conductivity material layer has a conductivity of more than 10 5 S·m -1 。
Further preferably, the above-mentioned high-conductivity material layer is made of a solid metal material, preferably any one of copper and its alloy, iron and its alloy, aluminum and its alloy material.
Further, the thin film heating device further comprises one or more microwave sources, and the microwave radiation array layer is connected to the microwave sources through a microwave transmission device so as to realize the generation and the transmission of microwaves.
In a second aspect, the present invention provides a film heating method, which uses the film heating device to heat a film material to be heated.
Further, the film material to be heated has an electrical conductivity of not less than 0.5S.m -1 Is a film material of (a); preferably, the conductivity of the film material to be heated is 2-10 5 S·m -1 The method comprises the steps of carrying out a first treatment on the surface of the More preferably, the conductivity of the film material to be heated is 10 to 10 2 S·m -1 。
Further, in the heating process, the film material to be heated is relatively statically attached to the attaching surface of the coupling energy receiving layer, or the film material to be heated is moved close to the attaching surface of the coupling energy receiving layer, so that continuous heating is realized.
Further, the thin film material to be heated may be a material in a solid film shape at normal temperature, such as a carbon fiber reinforced polymer matrix Composite (CFRP); the material can also be a film-shaped material which is liquid at normal temperature, such as a liquid water-based conductive film or a paint film with certain conductivity; but also film-like thermosetting materials which are liquid at ordinary temperature, such as thermosetting resin films.
Compared with the prior art, the invention has the beneficial effects that:
the thin film heating device provided by the invention adopts microwaves for heating, the energy efficiency is high, the heating is uniform, in the microwave heating device, microwaves are output through a microwave source, the microwave radiating array layer radiates microwaves, the coupled energy receiving layer is arranged for receiving the coupled microwave energy, and then the coupled energy receiving layer is used for loading the energy on the thin film material to be heated, so that the thin film material to be heated is heated.
Drawings
FIG. 1 is a schematic diagram of the overall structure of a thin film heating device according to the present invention;
FIG. 2 is an enlarged view of a portion of FIG. 1A provided in accordance with the present invention;
FIG. 3 is a schematic diagram of the overall structure of a microwave radiation array layer of a thin film heating device according to the present invention;
FIG. 4 is an enlarged view of a portion of FIG. 3B provided in accordance with the present invention;
FIG. 5 is a graph showing the results of the energy measurement of the microwave radiation array layer provided in example 3 on a copper plate;
FIG. 6 is a graph showing the energy measurement result of the microwave radiation array layer provided in example 3 on a liquid aqueous conductive film;
FIG. 7 is a graph of the results of microwave energy testing of the coaxial feed input on the center radiating element provided in example 3;
FIG. 8 is a graph showing the coupling current profile on a copper plate provided in example 3;
FIG. 9 is a graph showing the temperature distribution of the liquid aqueous conductive film according to example 3;
FIG. 10 is a graph showing the energy measurement results of the microwave radiation array layer provided in example 4 loaded on the coupled energy receiving layer;
the reference numerals are: 10, a coupling energy receiving layer, 20, an insulating layer, 30, a thin film material to be heated, 41, a dielectric substrate, 42, a metal ground, 43, a metal patch, 44, a grooved structure, 45 and a coaxial feed port.
Detailed Description
Embodiments of the technical scheme of the present invention will be described in detail below with reference to the accompanying drawings. The following examples are only for more clearly illustrating the technical aspects of the present invention, and thus are merely examples, and are not intended to limit the scope of the present invention.
Unless specifically stated otherwise, in the present invention, if there are terms such as "length", "width", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "longitudinal", "circumferential", "x-direction", "y-direction", "z-direction", etc., the positional relationship is based on the positional relationship shown in the drawings, it is only for convenience of describing the present invention and simplifying the description, and it is not necessary to indicate or imply that the referred device or element has a specific orientation, be constructed and operated in a specific orientation, so that the terms describing the positional relationship in the present invention are merely for exemplary illustration and are not to be construed as limitations of the present patent, and it is possible for those skilled in the art to understand the specific meaning of the above terms in conjunction with the drawings and according to the specific circumstances.
Example 1
Referring to fig. 1 to 4, the present embodiment provides a thin film heating apparatus, which includes a microwave source (not shown in the drawings), a microwave transmission device, a microwave radiation array layer, a heat insulation layer 20, a thin film material 30 to be heated, and a microwave radiation array layer and a coupled energy receiving layer 10 disposed opposite to each other, wherein the microwave source is used for generating microwaves, the microwave transmission device is used for distributing and transmitting microwave energy, specifically, the microwave transmission device includes a power distributor and a plurality of groups of coaxial cables connected thereto, the power distributor has one input port and a plurality of output ports, the input ports are connected to the microwave source, the output ports are connected to the plurality of groups of coaxial cables, and the output ends of the coaxial cables are connected to the microwave radiation array layer, so as to realize input of microwave energy. More specifically, the microwave radiation array layer is composed of a plurality of radiation units closely arranged on the same plane and distributed in a regular array, each radiation unit is provided with a coaxial feed port 45 for feeding microwaves, so that microwaves with a certain wavelength are fed in from the coaxial feed port 45, a certain gap is arranged between the microwave radiation array layer and the coupling energy receiving layer 10, the heat preservation layer 20 is arranged in the gap, two sides of the heat preservation layer 20 are respectively a first close-fitting side and a second close-fitting side, the first close-fitting side is jointed with the film material 30 to be heated, the second close-fitting side is jointed with the microwave radiation array layer, and the heat preservation layer 20 is arranged, so that on one hand, heat can be effectively isolated, heat generated during heating of the film is prevented from being directly conducted to the microwave radiation array layer, the microwave radiation array layer can be effectively protected, and on the other hand, the heat dissipation speed of the heat preservation layer 20 can be slowed down, and heating of the film material 30 to be heated is facilitated. It should be noted that the material of construction of the insulating layer 20 may be selected from any material known in the art that achieves the objects of the present invention, such as an air gel material. In addition, in order to heat the film material 30 to be heated effectively and uniformly, the coupling energy receiving layer 10 is provided with an attaching surface on a side facing the microwave radiation array layer, and the film material 30 to be heated is attached to the attaching surface, it should be noted that the film material 30 to be heated may be attached to the attaching surface by any means capable of achieving the object of the present invention, for example, by any means of close fitting, bonding, and thermal compression.
In this embodiment, each radiation unit includes a dielectric substrate 41, and a metal ground 42 and a metal patch 43 disposed on two sides of the dielectric substrate 41, where the metal ground 42 and the metal patch 43 are parallel to each other, the metal ground 42 is disposed on a side far from the coupling energy receiving layer 10, and a projection area of the metal ground 42 is larger than that of the metal patch 43, the dielectric substrate is made of a dielectric ceramic material, the coaxial feed port 45 longitudinally penetrates the radiation unit, and the coaxial feed port 45 is located such that an input impedance of the radiation unit is 50Ω. Meanwhile, in order to make the coupling current generated by the radiating unit generate a avoiding effect at the geometric center position so as to improve the common phenomenon of uneven heating with high middle temperature and low peripheral temperature, the geometric center of the metal patch 43 is provided with a slotted structure 44 penetrating through the metal patch 43. In addition, to achieve feeding of microwaves, the coaxial feed port is provided at one side of the metal ground 42 and penetrates at least completely through the metal ground 42 and the dielectric substrate 41, the coaxial cable includes an inner conductor and an outer conductor, the inner conductor penetrates through the inside of the coaxial feed port 42 and is welded to the metal patch 43 to achieve electrical connection of the two, and the outer conductor is electrically connected to the metal ground 42 to achieve connection of the coaxial cable and the radiating unit, preferably, the inner conductor is welded to achieve electrical connection with the metal patch 43 and the outer conductor is welded to the metal ground 42.
The principle of this embodiment is: in the device, the microwave energy is coupled to the high-conductivity coupling energy receiving layer 10 through the microwave radiation array layer, and then the energy is loaded on the film material 30 to be heated through the coupling energy receiving layer 10, thereby heating the film material 30 to be heated.
In this embodiment, it should be specifically noted that the shape and size of the slot structure 44, the position of the coaxial feed port 45, the shape and size of the metal patch 43, the shape and size of the radiating element, the distance between the microwave radiation array layer and the coupling energy receiving layer 10, and the material selection of the coupling energy receiving layer 10 can be adjusted according to practical needs, and the final purpose is that when microwaves with a certain frequency are inputted through the coaxial feed port 45, the microwave radiation array layer resonates between the microwave radiation array layer and the coupling energy receiving layer 10 and couples energy to the coupling energy receiving layer 10 as much as possible. Preferably, the person skilled in the art can obtain the optimal value of the above parameters by means of a simulation parameter scan.
Example 2
Referring to fig. 1 to 4, the overall structure of a thin film heating device provided in this embodiment is the same as that of embodiment 1, and meanwhile, this embodiment provides more detailed design parameters, in this embodiment, the microwave frequency generated by the microwave source is 2.45GHz, the radiating unit is of a regular square structure, the size and shape of the metal land 42 and the dielectric substrate 41 are the same, the projection area of the metal patch 43 is slightly smaller than those of the dielectric substrate 41 and the metal land 42, specifically, the metal patch 43 is a patch of a square structure, and the side length of the patch is 32-50 mm; meanwhile, a slotted structure 44 is provided at the very center of the metal patch 43, and the slotted structure 44 is sized by simulation parameter scanning so that the thin film heating device resonates at a microwave input frequency of 2.45GHz.
Example 3
Referring to fig. 1 to 9, in order to verify the effect of a thin film heating device provided in the above embodiment 2, the following simulation experiment was performed:
firstly, modeling simulation is carried out by using electromagnetic simulation software, a copper plate is selected as the coupling energy receiving layer 10, and the film material 30 to be heated has the conductivity of 20 S.m -1 The thickness of the liquid aqueous conductive film is 0.1mm, and the microwave input frequency is 2.45GHz. In the test process, a central coupling array unit is established, four adjacent surfaces of the coupling array unit are set to be periodic boundary conditions to simulate the condition of a coupling array, and then the coupling effect of the microwave radiation array layer on the copper plate and the liquid water-based conductive film is explored.
In the test process, the microwave coupling energy is loaded on the copper plate and the energy of the liquid water-based conductive film, and the microwave energy input by the coaxial feed port 45 on the central radiating unit is shown in fig. 5, 6 and 7 respectively; the simulation result shows that the energy ratio loaded on the copper plate is 7.68%, the energy ratio loaded on the liquid water-based conductive film is 79.51%, the coupling energy efficiency of the system is more than 85%,79.51% is the heating efficiency of the liquid water-based conductive film, and the result shows that the heating efficiency of the film heating device is better.
Meanwhile, when microwave energy is coupled to the copper plate by the microwave radiation array layer, the microwave energy mainly exists in the form of coupling current, and the coupling current distribution of the surface of the copper plate near one side of the microwave radiation array layer is drawn as shown in fig. 8.
In fig. 8, the arrow size is proportional to the current size, and the result shows that the coupling current is located at a position which is close to the surface of the liquid aqueous conductive film and distributed uniformly, according to joule's law q=i 2 Rt, the coupling current generates corresponding Joule heat when on a substance with certain conductivity, so that the temperature of the liquid water-based conductive film is increased, and the liquid water-based conductive film is heated with uniform heating effect.
In addition, the calculation result of the electromagnetic loss is coupled with a thermal field to perform multi-physical-field calculation, so that the temperature distribution of the liquid water-based conductive film can be obtained, wherein the initial temperature value of the working environment is set to be 293.15K, the system works for 60 seconds under the condition of 20W input power, the temperature distribution condition of the liquid water-based conductive film on one side of the copper plate under the condition of not considering heat dissipation is shown in fig. 9, and as can be seen from fig. 9, the whole liquid water-based conductive film has a higher temperature rise, the volume average temperature of the liquid water-based conductive film is 730.41K, and the whole temperature distribution is uniform.
Example 4
In addition to heating the thin film on the metal, the coupled energy receiving layer itself may also be heated. The procedure was carried out analogously to example 3.
Firstly, using electromagnetic simulation software to make modeling simulation, the conductivity of coupling energy receiving layer is 10 6 S·m -1 The thickness of the coupling energy receiving layer to be heated is 1mm, and the microwave input frequency is 2.45GHz. In the test process, a central coupling array unit is established, four adjacent surfaces of the coupling array unit are set as periodic boundary conditions to simulate the condition of a coupling array, and then the coupling effect of the microwave radiation array layer on the coupling energy receiving layer is explored.
Finally, the microwave coupling energy is loaded on the energy of the coupling energy receiving layer as shown in fig. 10; the result showed that the energy loading on the coupled energy receiving layer was 79.78% which is also the heating efficiency of the device.
The above embodiments are only for illustrating the technical solution of the present invention and not for limiting the same, and although the present invention has been described in detail with reference to the preferred embodiments, it should be understood by those skilled in the art that modifications and equivalents may be made thereto without departing from the spirit and scope of the technical solution of the present invention, which is intended to be covered by the scope of the claims of the present invention. The technology, shape, and construction parts of the present invention, which are not described in detail, are known in the art.
Claims (10)
1. A thin film heating apparatus, comprising:
the microwave radiation array layer consists of a plurality of radiation units which are closely arranged on the same plane and distributed in a regular array, and each radiation unit is provided with a coaxial feed port (45) for feeding microwaves;
and the coupling energy receiving layer (10) is arranged opposite to the microwave radiation array layer and is used for receiving coupling energy, and an attaching surface is arranged on one side of the coupling energy receiving layer (10) facing the microwave radiation array layer and can be attached by a film material (30) to be heated.
2. A thin film heating apparatus as set forth in claim 1, wherein: the microwave energy-saving device further comprises an insulating layer (20), wherein the insulating layer (20) is arranged between the microwave radiation array layer and the coupling energy receiving layer (10), the insulating layer (20) is provided with at least one first clinging side, and the first clinging side can be attached to the film material (30) to be heated.
3. A thin film heating apparatus as set forth in claim 1, wherein: the radiation unit comprises a dielectric substrate (41), and metal grounds (42) and metal patches (43) which are respectively arranged on two sides of the dielectric substrate (41), wherein the metal grounds (42) are arranged on one side far away from the coupling energy receiving layer (10), and the projection area of the metal grounds (42) is larger than that of the metal patches (43).
4. A thin film heating apparatus as claimed in claim 3, wherein: the coaxial feed port (45) is arranged on one side of the metal ground (42) and at least completely penetrates through the metal ground (42) and the dielectric substrate (41).
5. A thin film heating apparatus as set forth in claim 4, wherein: the geometric center of the metal patch (43) is provided with a slot structure (44) penetrating through the metal patch (43).
6. A thin film heating apparatus as set forth in claim 1, wherein: the coupled energy receiving layer (10) has at least a solid metal layer on a side close to the microwave radiating array layer.
7. A thin film heating apparatus as set forth in claim 1, wherein: the thin film heating device further comprises one or more microwave sources, and the microwave radiation array layer is connected to the microwave sources through a microwave transmission device.
8. A method of heating a film, characterized by: heating a thin film material (30) to be heated using the thin film heating apparatus according to any one of claims 1 to 7.
9. A method of heating a film as set forth in claim 8, including: the film material (30) to be heated has an electrical conductivity of not less than 0.5 S.m -1 Is a film material of (a) a film material of (b).
10. A method of heating a film as recited in claim 8, wherein: during heating, the film material (30) to be heated is attached to the attachment surface of the coupling energy receiving layer (10) relatively stationary, or the film material (30) to be heated is moved against the attachment surface of the coupling energy receiving layer (10).
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| CN202310137095.0A CN116261237A (en) | 2023-02-20 | 2023-02-20 | Film heating device and heating method |
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| CN202310137095.0A CN116261237A (en) | 2023-02-20 | 2023-02-20 | Film heating device and heating method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116653396A (en) * | 2023-02-20 | 2023-08-29 | 四川大学 | Flexible composite material and in-situ curing system and curing method thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116653396A (en) * | 2023-02-20 | 2023-08-29 | 四川大学 | Flexible composite material and in-situ curing system and curing method thereof |
| CN116653396B (en) * | 2023-02-20 | 2024-02-20 | 四川大学 | Flexible composite material and in-situ curing system and curing method thereof |
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