KR20190083953A - Microwave System - Google Patents

Abstract

A microwave system for generating microwaves comprises a high frequency semiconductor module for oscillating microwaves; an AC-DC conversion inverter for converting input AC power into DC to supply power to the semiconductor module; an automatic control board for regulating and supplying power and reducing or cutting off power when a reflected wave is generated; an applicator to which power is supplied; a power supply device having a gateway for exchanging signals with the outside; and an isolator formed in the power supply device to diffract the reflected wave to protect the high frequency semiconductor module. When reflected wave power is generated in the power supply device, a control algorithm or a coaxial cable impedance tuner may be further included to modulate frequencies to minimize the reflected wave power. It is possible to eliminate heavy and bulky microwave components for ease of use.

Description

Microwave System

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a microwave system, and more particularly, to a microwave system for generating a microwave, a transmission line as an accessory thereof, an adder such as a coaxial transducer, To a microwave system.

Generally, microwave is a type of electromagnetic wave, which means an electromagnetic wave having a frequency (f) bandwidth ranging from 300 MHz to 30 GHz (wavelength: 1 cm - 1 m). 1 MHz <f (frequency) <300 MHz is called Radio Frequency. f (frequency) <1 MHz is called low frequency. Typically, microwaves (microwave) and radio waves (radio-frequency) are separated according to the frequency band as described above, but in some cases, the frequencies are similar in some cases (for example, For 300 MHz, etc.), and in the present invention, it is generalized by microwave or high frequency. When a microwave or a high frequency is generated by a semiconductor device, it is referred to as a solid state microwave (SSMW) or a solid state radio frequency (SSRF).

Microwaves are fully reflected when they come into contact with metal. However, when a non-metallic dielectric is irradiated with microwaves, it penetrates into the dielectric and rotates and vibrates the polar molecules in the molecule, and generates heat by the internal friction. This heat causes heating of the irradiated object of the microwave. A typical example of using this closely in real life is microwave.

Microwave devices are next-generation industrial technologies that can dramatically reduce work time, process costs, energy, and labor costs. The industrial applications of microwaves are very broad, including heating, drying, thawing, sterilization, and cooking for food applications. Especially, when microwave energy is irradiated on a food, the inside of the food can be heated very quickly through the surface of the food, thereby minimizing the taste, smell, texture and nutritive value of the food. For other industrial applications, existing industries include rubber processing, dyeing and fixing dyeing and drying of papermaking fabrics, drying of wood, and the like, and new businesses are widely used in military, semiconductor and display production, electronic production processes, and medical applications have.

Microwaves can also be used in the medical field. High-frequency diathermy (high-frequency therapy) is a type of medical device that uses microwaves and is used to heat deep tissues. It is a type of electrotherapy using high frequency radio waves. Among them, microwave (electromagnetic wave of wavelength 1m ~ 1cm) is the most frequently used nowadays. As a result, the effect of heat on the deep tissue can be mentioned. Examples of diseases that can be adapted include inflammation of the musculoskeletal system, side plate stiffness, shoulder water syndrome, and buckling, and it is effective in alleviating the pain caused by this. As a way of heating (heating) tissue by the resistance of the body's tissue when radio-frequency electromagnetic radiation passes through it, the tissue is warm, but not destroyed, in the medical diathermy. On the other hand, in electrical coagulation [surgical diathermy], the tissue is destroyed.

One of the most used fields besides heating and drying microwave energy is plasma generation. Plasma is the material of the fourth state (the Fourth State of Matter), which means that electrons, ions, neutrons, protons, etc. are mixed. In a microwave (microwave) or high-frequency plasma generator, electrons are selectively energized and become energy states at high levels, colliding with a raw material gas (neutron), causing more electrons and anions, cations, Neutrons synthesized between various molecules and atoms, and active radicals in which neutrons are activated. Depending on which species is used in the plasma state, it is referred to as a chemically reactive plasma, an ion beam plasma, an electron beam plasma, or a reactive ion plasma. These activating radicals have been applied in many industrial fields such as semiconductor and display manufacturing, combustion, lighting, and chemical industry because they can cause reactions at high temperatures and possible at low temperatures. In addition, the field of illumination is the largest field related to plasma generation. In the case of plasma discharge lamps, unlike conventional light sources such as incandescent lamps, fluorescent lamps, and metal halides, they are electrodeless, brightest light sources, have a long life span, and are capable of generating light of 140 lm / There are advantages. In the case of such a semiconductor device plasma light source, it is a natural light source similar to solar light as a light source having a continuous spectrum of approximately 400 to 800 nm wavelength, and is environmentally friendly and has a long life span. Conventional light sources use electrodes, which results in poor energy efficiency, contamination and corrosion, resulting in short life span, while plasma light sources are electrodeless and have a long life span. For example, it takes about 50,000 hours for a semiconductor device plasma light source to reach about 70% of a source light amount, but it is only 20,000 hours for a conventional high intensity discharge lamp source. Another advantage is that it is the most efficient light source that emits a light flux of approximately 130 to 140 lm per 1 W output. A conventional plasma light source is supplied with energy from a special inverter (electronic ballast for an electrodeless lamp) capable of oscillating in a low frequency (250 KHz band) to generate a plasma. Electrons in the plasma react with gas sealed in the lamp, And this ultraviolet ray is ultimately emitted as visible light while passing through the triple-wavelength fluorescent material applied inside the lamp, thereby becoming a long-life, high-efficiency illumination source. Table 1 compares the strengths and weaknesses of various conventional illumination sources and AC semiconductor devices (low frequency / high frequency) plasma illumination sources.

Lighting Types Light source
type life span
(hrs) magnitude
(KLm) Energy efficiency
(lm / W) Chromaticity
Rendering Color temperature
(K) light on
time
(Sec) Residence, etc.
time
(Sec) Incande-
scent Incandescent 2,000 1,700 10-17 100 3,200 0.1 0.1 Fluore-
scent Fluorescent lamp 10,500 3,000 115 51-76 2,940 ~
6,430 0.3 0.1 LED LED 25,000 130 60 ~
100 30 6,000 0.1 0.1 High intensity discharge (HID) High brightness
Discharge lamp 20,000 25,000 65 ~
115 40-94 4,000 ~
5,400 60 480 AC (LF / RF) Plasma AC (low frequency / RF)
plasma 50,000 25,000 100 ~
140 70-94 4,000 ~
5,500 30 25

Table 1 shows the comparison of microwave (microwave) and RF (high frequency) plasma illumination sources with existing illumination sources and the superiority of plasma illumination sources.

Typically, microwaves (microwave) and radio waves (radio-frequency) are separated according to frequency bands as described above . In some cases, however, these bands are similar in band g., such as several hundred MHz to 300 MHz frequency band), the present invention also generates a name to the very high frequency semiconductor. The overall configuration of a conventional microwave application apparatus includes a magnetron, a waveguide, a circulator, a dummy load, a 3-stub-tuner, an applicator, a plunger Plunger (also referred to as a sliding short circuit) and power supply power. The components of a conventional microwave application apparatus are illustrated in FIG.

Conventionally, the core generating device of a microwave is a magnetron, which is basically similar to a bipolar vacuum tube and has a structure in which a hot electron is emitted from a hot wire of a cathode. A high voltage electric field is applied to the cylindrical outer anode and the inner cathode of the pure copper, and a magnetic field perpendicular to the electric field is formed by the permanent magnets installed above and below. Electrons protruding from the cathode are directed to the anode due to the influence of the electric field, and are subjected to the influence of the magnetic field and rotate in the cylinder. The electrons pass through the vanes formed on the anode side to form a high frequency electromagnetic field in the cavity resonator.

In the power supply, when the AC voltage of 220 V is changed to a high voltage of 4000 V or more and a current is supplied to the magnetron, a microwave that oscillates at a high frequency of 2.45 GHz is produced in the magnetron. When a microwave comes into contact with an object to be irradiated, the dipole constituting the object rapidly changes the arrangement direction of the axis by an electric field of a high frequency, and the heat is generated by the frictional heat at this time. Therefore, only the insulator (dielectric) is heated because radio waves must penetrate into the object.

When power is supplied from the power supply to the filament and the anode of the magnetron, the microwave generated by the magnetron is transmitted to the applicator through a waveguide, a circulator, a 3-stub-tuner, do. The power absorbed by microwave generated by the magnetron is referred to as forward power (forward power or incident wave power or traveling wave power), and the power not absorbed is referred to as reflected wave power (reflected power or reflected wave power) Quot; The reflected wave power can be returned to the magnetron, so a circularizer is used to change the direction of the reflected wave to protect it. The energy of the reflected wave is absorbed by the dummy rod through which the cooling water flows and is emitted to the outside. A 3-stub tuner or plunger is used as a matcher to minimize the reflected wave.

FIG. 1 shows an example of a plasma generating apparatus using a microwave. As shown in FIG. 1, a conventional microwave application apparatus has a configuration in which a microwave generated in a magnetron is passed through a waveguide, a circulator, a 3-stub-tuner and a plunger, Applicator, Applicator).

Other applications are formed with a similar structure. It is possible to omit the 3-stub tuner, isolator (circulator + dummy rod) and plunger when the wavelength is calculated according to the frequency and the waveguide length is adjusted based on this to minimize the reflected wave. A typical example is a microwave oven used at home. In case of 2.45GHz microwave, magnetron usually has 1, 2, 3, 6 Kw output method. Cooling method uses air cooling for low power and water cooling method for high power. When an energy of 3 Kw or more is required, a plurality of magnetrons are combined and arranged. In the case of 915MHz microwave, there is a high power class magnetron of 5 ~ 100 Kw and mainly cooled by water cooling method.

As illustrated in Fig. 1, an application apparatus using a microwave is structurally complicated, heavy, and large. Therefore, there are many difficulties in application fields requiring thin and light chips. These areas include plasma sources for semiconductor fabrication, lighting, and medical applications.

As described above, in the conventional microwave application apparatus and process process, the volume of the microwave application apparatus is increased and the weight becomes heavy due to the magnetron for generating the conventional microwave, the matching unit for the circulator, the dummy rod and the impedance tuning, This has been a difficult and time-consuming problem. Accordingly, it is an object of the present invention to remove heavy and bulky microwave components as described above to facilitate their use.

In addition, conventionally, microwave oscillation is generated by one magnetron microwave, so it is not easy to achieve large-scale and high uniformity. In addition, when a plurality of magnets, a power supply, and a microwave transmission device using a waveguide are used, it is difficult to efficiently apply the microwave in various fields because the above-mentioned bulky and heavy weight problems are serious. In order to solve these problems, the present invention discloses a microwave system in which a microwave transmitter using a very high frequency semiconductor module and a waveguide-to-coaxial cable conversion adapter is thinned and shortened and an efficient installation can be accomplished by various methods .

A microwave system according to the present invention includes: a high frequency semiconductor module for oscillating a microwave; An AC-DC conversion inverter for converting input AC power into DC power and supplying power to the semiconductor module; An automatic control board for regulating and supplying power and reducing or blocking power during generation of reflected waves; An electric power applied applicator; A power supply device having a gateway for sending and receiving signals to and from the outside; And an isolator which is contained in the power supply device and protects the high frequency semiconductor module by diffracting the reflected wave.

Preferably, the microwave system may further include a control algorithm for modulating a frequency when reflected wave power is generated in the power supply device to minimize reflected wave power.

Preferably, the microwave system may further include a coaxial cable impedance tuner to minimize reflected wave power when reflected wave power is generated.

Preferably, the applicator is equipped with a plunger to minimize microwave power and to transmit microwaves.

Advantageously, the power supply and the applicator are connected by connectors and coaxial cable transmission lines to deliver microwaves.

Preferably, the power supply device and the applicator are connected to a connector and a coaxial conversion adapter to transmit microwaves.

A microwave system according to the present invention includes: a plurality of multiple high frequency semiconductor power supply devices for oscillating a microwave; A plurality of transmission lines and a transmission adapter for transmitting power from the power supply; A plurality of power-supplied applicators; A communication gateway that measures and feeds backward power and reflected wave power among power supplied to each applicator in the plurality of power supply devices; A display device for indicating the forward power and the reflected power; A plurality of external monitors for displaying the power values and the matching process curve; A central control computer for setting and delivering a power value desired by each user to supply from the power supply device, receiving the measured forward power and reflected power, transmitting the measured forward power and reflected power to the display device, and comparing and comparing the values; And a central automatic control computer that accurately and automatically controls the power value and communicates and manipulates the microwave application device through a communication device and a communication protocol.

Preferably, the microwave system may further include a tuning control algorithm for minimizing the reflected wave power by modulating a frequency when reflected wave power is generated within the plurality of power supply devices.

Preferably, the microwave system may further include a coaxial cable impedance tuner to minimize reflected wave power when reflected wave power is generated.

Preferably, the applicator is equipped with a plunger to minimize microwave power and to transmit microwaves.

Advantageously, the power supply and the applicator are connected by connectors and coaxial cable transmission lines to deliver microwaves.

Preferably, the power supply device and the applicator are connected to a connector and a coaxial conversion adapter to transmit microwaves.

A microwave system according to the present invention includes: a magnetron module that oscillates a microwave; An AC-to-DC converter inverter for converting input AC power to DC and supplying power to the magnetron; An automatic control board for regulating and supplying power and reducing or blocking power during generation of reflected waves; A power supply device having a gateway for sending and receiving signals to and from the outside; An algorithm for minimizing the reflected wave by the tuner when reflected power is generated in the power supply device; An isolator in the power supply device to protect the high frequency semiconductor module by diffracting the reflected wave; Converting the microwave into a coaxial cable form using a waveguide-to-coaxial (cable) switching adapter, and then delivering the microwave via a coaxial cable.

Preferably, in the present invention, the microwaves transmitted by the magnetron and the waveguide can be processed by connecting the coaxial rods, which are collectively arranged in parallel with the respective linear antennas, using a waveguide-coaxial (cable) conversion adapter and a coaxial cable.

Preferably, in the present invention, the microwaves transmitted by the magnetron and the waveguide are coupled to the respective coaxial rods or subset of the coaxial rods of the respective linear antenna using a waveguide or coaxial cable splitter, a waveguide- They can be connected and processed individually.

Coaxial Transformer (Coaxial Transition), transmission line, waveguide-coaxial conversion device, which is a component of high-frequency semiconductor generating microwave, impedance matching and circuit protection by coaxial cable impedance tuner System, it is possible to provide a microwave processing system which can easily perform a microwave process and can easily install such a device, thereby remarkably improving work efficiency. have.

Further, according to the present invention, since a plurality of microwave oscillation apparatuses can be easily constituted and installed, it is possible to make the microwave apparatus large in size or to install and operate a plurality of simple application machines and to provide a variety of applications such as plasma, illumination, medical treatment, It is possible to maximize the efficiency, economical efficiency, and convenience of the user for processing each industrial application in the industrial field.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a diagram showing a configuration example for explaining a plasma generating apparatus which is a conventional microwave application apparatus; FIG.
BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a plasma generating apparatus.
FIG. 3 is a view showing plasma generation when a conventional plasma generating apparatus using a microwave is changed in a process condition. FIG.
Fig. 4 is an exemplary view of a conventional microwave oven; Fig.
5 is a structural view of a transmission line (coaxial cable) for microwave transmission.
FIG. 6 is an exemplary view showing a configuration in which a magnetron, a circulator, and a dummy rod among the constituent items of a plasma generator, which is a conventional microwave application apparatus, are embedded in a power supply.
FIG. 7 is an exemplary view showing a configuration in which a magnetron, a circulator, a dummy load, and a matching unit are included in a power supply among constituent items of a plasma generating apparatus which is a conventional microwave application apparatus.
FIG. 8 is a schematic view illustrating a configuration of a plasma generator according to the present invention, in which a magnetron, a circulator and a dummy rod are housed in a power supply, and then a coaxial cable and a coaxial cable adapter An example of a configuration for connecting to an applicator.
FIG. 9 is a schematic view of a plasma generator according to the present invention. FIG. 9 is a perspective view of a plasma generator according to a second embodiment of the present invention. FIG. 9 is a perspective view of a coaxial- An example of a configuration for connecting a cable to an applicator.
10 is an exemplary view showing a microwave application apparatus for generating a plasma using a semiconductor microwave oscillation apparatus, a transmission line, and a transmission adapter according to the present invention.
11 is a view showing an example of a microwave application apparatus for generating plasma using a semiconductor microwave oscillation apparatus, a transmission line, and a transmission adapter according to the present invention, and a plasma generated picture.
FIG. 13 is an exemplary diagram showing a device configured to enable large area plasma generation using a plurality of multiple semiconductor microwave power supplies, transmission lines, and a transmission adapter according to the present invention. FIG.
FIG. 14 is an exemplary diagram showing a configuration of a large-area plasma by arranging a plurality of semiconductor microwave generators according to the present invention; FIG.
FIG. 15 is a diagram illustrating a method of converting a microwave transmitted through a magnetron and a waveguide into a coaxial cable using a coaxial-waveguide conversion adapter, and then collectively collecting and connecting the coaxial rods of the respective linear plasma antennas .
FIG. 16 is a view showing a state in which a microwave transmitted through a magnetron and a waveguide is divided into a coaxial cable by using a coaxial-waveguide conversion adapter, and the coaxial rods of the respective linear plasma antennas are individually FIG. 8 is a diagram illustrating a method of connecting or partially connecting and connecting in parallel; FIG.

For a better understanding of the present invention, a preferred embodiment of the present invention will be described with reference to the accompanying drawings. The embodiments of the present invention may be modified into various forms, and the scope of the present invention should not be construed as being limited to the embodiments described in detail below.

The present embodiments are provided to enable those skilled in the art to more fully understand the present invention. Therefore, the shapes and the like of the elements in the drawings can be exaggeratedly expressed to emphasize a clearer description. It should be noted that in the drawings, the same members are denoted by the same reference numerals. In the following description, well-known functions and constructions which are considered to be unnecessarily obscured by the gist of the present invention will be omitted.

   1 is a top view and a side view of a microwave application apparatus. The overall configuration of the microwave application apparatus includes a magnetron 111, a waveguide 112, a circulator 113, a 3-stub-tuner 115, an applicator 117, a sliding short circuit 119, and a power supply or power 121 that supplies power to the marnetron. That is, when power is supplied from the power source to the filament and the anode of the magnetron 111, the microwave generated by the magnetron passes through the waveguide, through the circulator 113 and the 3 stub-tuner 115 And is transmitted to an applicator (applicator) 117.

A 3-stub tuner is a device with three metal rods in a waveguide or cavity resonator, which is a matching and matching device that allows microwaves to be transmitted as full as possible without reflection. A plunger or sliding short circuit (SSC) is also an additional device for matching to minimize reflected waves. Sometimes we use 4-stubs instead of 3-stubs. In addition, manual tuning is performed manually by manually adjusting each stub, but automatic tuning is also performed by a matching algorithm. The automatic matching unit consists of a stub, a diode, an integrated automatic control board, and a motor drive unit, thereby matching the load impedance. The matching will be described in more detail as follows. In general, when two circuits are combined, if the impedance of the output terminal of the first circuit is Z1 = R1 + jX1 and the input impedance of the second circuit is Z2 = R2 + jX2, (Common combination), that is, when R1 = R2 and X1 = -X2, the conditions of the loss minimum and the output maximum are obtained. Here, the first circuit is the matching device and the second circuit is the applicator. That is, matching is a method for transmitting the maximum output in the signal transmission path. The principle of matching is that the signal source has an internal resistance and the load must be equal to the signal source impedance for maximum output transmission. Where active devices are included, the input and output impedances are quite different. However, the input impedance needs to be matched to the signal source, and the output load must match the output impedance. Power amplifiers and many active devices deviate from the basic principles because of the limit imposed by the requirements of internal power loss and linearity. The output load impedance should be optimally chosen to match the impedances so that maximum output transfer occurs under these constraints. There are various types of matching methods such as matching by a conductor bar, matching by a conductor plate window in a waveguide, matching by an anti-reflecting end circuit, matching by a tapered waveguide, matching by a transformer (/ 4 impedance converter) have. As shown in FIG. 2, in the case of a 3-stub tuner, a conductor rod is inserted into a waveguide from a wide surface of a waveguide to perform matching. When a reflected wave exists in a waveguide, the reflected wave is canceled by an electromagnetic field by a conductor rod. The plunger matching method is a method of matching by a conductor plate window in a waveguide, in which an obstacle such as a conductive plate is inserted at a right angle to the observation in a waveguide, and the distance to the load is appropriately selected. In the case of FIGS. 1 and 2, the 3-stub tuner matching method and the plunger matching method are mixed.

 If the microwave is reflected by the applicator without being absorbed, the reflected microwaves can cause fatal damage to the magnetron. In this case, the direction of the reflected wave is switched to protect the magnetron, and the reflected wave is converted into a dummy Load; 123), the energy is absorbed. Coolant is supplied to the dummy rod to discharge the absorbed heat to the outside. The power propagated in the traveling direction of the microwave oscillated from the magnetron is referred to as forward power (forward power or incident wave power or traveling wave power), and the power that is not absorbed by the applicator is referred to as reflected power Power) or reverse-wave power. If the reflected wave from which the microwaves return is not matched, the magnets 111, which are high-priced products, are damaged. Therefore, the reflected waves are separately switched by the magnet embedded in the circulator 113, And absorbed by the absorber in the absorber. The dummy load 123 for absorbing heat and the magnetron 111 for generating heat and the power supply module or the power supply 121 are cooled by supplying air or cooling water so that the temperature is not raised and the reflected wave energy absorbed by the cooling water Is discharged to the outside. Directional couplers may be installed between the circulator and the 3-stub tuner to measure these forward and reflected power. A port is used to measure two microwaves in the waveguide. One is used to measure the forward power with the direction of the port facing the application, and the other is located in the opposite direction, namely the magnetron, to measure the reflected power.

An assembly diagram of a plasma generator using a microwave is illustrated in Fig. FIG. 3 shows photographs in which plasma is generated by using such a microwave. The photographs in which the plasma at each pressure is generated and the pressure, which is an important process variable, are illustrated.

FIG. 4 shows an example of a home cooker used to cook and defrost a microwave by heating the food. In this case, the load impedance is calculated and designed. Because it is an application device, the device is simple compared to the application field of plasma.

A waveguide, a conduit through which microwaves are transmitted, is an arbitrary structure that propagates waves by inducing waves. Mainly refers to a hollow conductor metal tube that allows electromagnetic waves to propagate. Waveguides are applied to high-power, low-loss, and millimeter-wave systems. Applications include the transmission of electromagnetic waves, such as radar, satellite repeaters, . The structure of the waveguide is a metallic conductor (copper, brass, aluminum, etc.) surrounding the electromagnetic wave waveguide space. The conductor thickness should be 1 to 3 mm for mechanical strength. Make it double.

The frequencies of microwaves allowed for the industrial, scientific, and medical (ISM) industries are 2.45 GHz and 915 MHz (0.915 GHz). The dimensions of the waveguide used in the case of 2.45 GHz microwave are WR-284 (inner size: 72.14 x 34.04 mm), WR-340 (inner size: 86.36 x 43.18 mm), WR-430 (inner size: 109.22 x 54.61 mm) And a WR-975 (inner size: 247.65 x 43.18 mm) waveguide is used for 915 MHz. Thus, the size of the waveguide is typically determined by the frequency of the microwave. The waveguides vary from WR-2300 (internal size: 584.2 x 292.1 mm; operating frequency 0.32 to 0.49 GHz) to WR-3 (internal size: 0.86 x 0.43 mm; operating frequency 217 to 333 GHz). The larger the frequency used, the smaller the internal waveguide.

In the transmission of microwave energy, which is irradiated by a microwave oscillator, the wire can not be used because it radiates microwaves to the outside, and usually a metal hollow pipe called a waveguide is used. The waveguide has a rectangular or circular waveguide depending on the sectional shape, and a ridge waveguide having a complex shape. Generally, rectangular waveguides are used, and circular and ridge waveguides are used for special purposes.

Generally, the waveguide that transmits microwaves is a rectangular tube type, and the microwaves having spread characteristics are confined in a square tube, and usually made of brass or copper having good conductivity. Therefore, such a rectangular waveguide becomes heavier and more difficult to assemble during installation of a process or apparatus using a microwave. Particularly, even in case of low power, the apparatus is heavy and heavy, so that difficulty of installation and application are limited. An example of a plasma generating apparatus using such a microwave transmitting apparatus (see Figs. 1 and 2) is illustrated in Fig.

For microwave transmission, there is a coaxial cable (coaxial tube) in addition to the waveguide. The problem is that as the frequency increases, the wave easily escapes to the outside. In case of frequencies above 60 Hz, a closed waveguide is used in order to reduce the wave outflow to the outside. Coaxial cable, metal waveguide, and stripline are used as the closed waveguide type. The coaxial cable surrounds the inner conductor with an insulator and shields the outer conductor to transmit higher frequency signals than the normal power transmission line or twisted wire twisted wire twisted pair cable. It is a form to reduce wave out of cable due to external conductor.

The coaxial cable is a transmission line with a center conductor supported by polyethylene on the center axis of the pipe made of conductors, and is used for output signal transmission of the power monitor. Coaxial cables are combustible and easy to handle, but have low power tolerance for microwave transmission energy. For a low-loss coaxial cable with an impedance of 50 ohm, the maximum allowable power of the microwave transmission energy is 330 Watt (outer diameter 10 mm) to 520 Watt (outer diameter 15 mm) for frequency 2.45 GHz and 330 Watt 10 mm) to 520 Watt (outer diameter 15 mm) and 580 Watt (outer diameter 10 mm) to 900 Watt (outer diameter 15 mm). Coaxial cables are used for high frequency heating devices, but microwave heating devices are not used for high power applications of 300 to 500 W or more.

The difference between the transmission line and the waveguide is that the transmission line (including the coaxial line) propagated by the TEM mode can also be regarded as a waveguide, but the transmission of the wave by the TEM mode is not generally referred to as a waveguide. That is, the expression of wave propagation is mainly written by TE mode (Transverse Electric Field / Wave, transverse electric field) and TM mode (Transverse Magnetic Field / Wave, transverse magnetic field). The shape of the transmission line is composed of two or more conductors, in which two conductors are isolated by a dielectric. The energy transfer scheme transfers energy in the form of a reciprocating current / voltage wave across two conductors. The wave form is transmitted as a TEM wave when viewed in the form of an electromagnetic wave, and is caused by the transmission of a current wave and a voltage wave. Because there is no cut-off frequency, it is possible to operate from direct current to very high frequency. It is applied to low output and low frequency, but it is inefficient due to skin effect and dielectric loss in very high frequency band. A coaxial cable is a kind of transmission line. In general, a two-wire parallel cable causes a defect in which the effective resistance of the wire rises due to a skin effect due to a high frequency. The coaxial cable was developed to overcome this problem. 5. In detail, the two cylindrical conductors and the dielectrics share a central axis and the inner conductors are used for actual signal transmission, and the outer conductors are made of aluminum / copper net-like shielding shields ) (Braided or laminated), and is made by separating them by filling them with a dielectric / insulator (such as polyethylene). On the outermost side, the jacket is covered with a cable jacket (vinyl, polyethylene, etc.).

 The advantage of the above-mentioned coaxial cable is that the transmission line has a shielded structure in which external interference hardly affects. Since there is no cutoff frequency like a waveguide, it can be used from direct current (DC) to microwave and millimeter wave. At present, it is possible to reach more than 50 in short distance. However, the waveguide structure is used because of a large loss in the distance over a few GHz band. The smaller the outer diameter is, the higher the high frequency use is possible. However, the power that can be carried is limited and the fabrication is difficult. The propagation mode generally operates in TEM mode. Usage is used in long distance telephone network, CATV, video transmission, internal information communication network (usually used less than 1GHz).

The connectors of coaxial cable use BNC, TNC, FT-type, N-type, F-type, miniature type (SMA, SMB, SMC) Coaxial cable is usually used as a transmission line at frequencies below UHF. However, even in microwave circuits, the inner conductor uses silver plating on the steel wire to allow the signal to flow through the silver plated part of the conductor surface, And the dielectric loss is lowered by using a material such as Teflon as an insulator.

In the case of using a microwave of low power, there is a method in which a coaxial cable is used instead of a waveguide to reduce volume and weight. The plasma generating apparatus using the microwaves illustrated in FIG. 6 will be described as an example. Circulators and dummy rods are connected to a power source, such as a power source, when a magnetron (referred to as M), a circulator (referred to as C), and a dummy rod (referred to as D) It is installed inside the supply device to integrate and unify it. Thus, it is possible to reduce the space considerably, and it is advantageous in that the power supply to the magnetron is directly connected from the inside to supply the cooling power, and the cooling line and the like are shared. 3 Stub - If the tuner (matcher or matching device) is manually operated, the stub must be operated to match the position. In the case of an automatic tuner, the stubs are automatically adjusted to match the impedance as illustrated in FIG. 7, so that it is possible for the tuner to be located in the power supply.

6 and 7, it is inconvenient to connect the isolator (the sum of the circulator and the dummy load is referred to as an isolator) to the applicator by using the waveguide. In order to solve such a problem, the present invention discloses a method for converting a waveguide transmission method of a microwave into a coaxial cable transmission method. That is, if a coaxial adapter (coaxial adapter) is used to convert the waveguide into a coaxial cable, the coaxial cable can be used instead of the waveguide to finally connect the applicator 117 to the microwave.

In this case, the installation space can be further reduced and the installation can be facilitated. 8 and 9 show the case where the tuner is located outside the power supply (Fig. 6) and the tuner is located inside the power supply (Fig. 7) by installing a waveguide- Fig. FIGS. 8 and 9 show an embodiment in which a waveguide-to-coaxial cable changeover adapter is connected to a waveguide flange of the tuner to switch to a coaxial cable, and the waveguide to coaxial cable changeover adapter is used again to connect to the applicator. That is, it is a method to use by connecting tuner -> waveguide - coaxial cable conversion adapter -> coaxial cable -> coaxial cable - waveguide conversion adapter. The difference between FIG. 8 and FIG. 9 is the case where the tuner is embedded in the power supply box (FIG. 9) and the case where the tuner is outside the power supply box (FIG. 8). As described above, in the present invention, a coaxial cable and a coaxial cable adapter are used to simplify a microwave device. The present invention also includes a method of facilitating the installation by inserting the isolator and the matching unit into the power supply unit and connecting them with a coaxial cable.

Microwave applications can be much simplified if the device is constructed using methods such as pre-designing and specifying the length for accurate impedance matching so that the 3-stub tuner and isolator are not needed in the path of microwave propagation have. In addition to these cases, especially in the case of plasma generation, a tuner (matching device) should be used for impedance matching. As a method for not using the conventional tuner 115, there is a method in which the plunger 119 is fused with the applicator 117 in place of the tuner of the conventional 3 stub system (Figs. 1 to 2, 9). The present invention includes a method of using impedance matching in the form of a plunger.

In addition, it is also possible to use a semiconductor very high frequency generating module instead of the conventional magnetron and a tuner (matching device), to use a modulated generation frequency (FVTM), or to use a coaxial tuner or plunger as an applicator So that the microwave equipment can be used in a much simpler manner when impedance matching is used. The present invention includes an applicator system equipped with such a frequency modulation method (FVTM) or a plunger type matching method. A detailed method of this will be described later.

In order to avoid the conventional method of using the magnetron that oscillates the microwave as in the case of the above-described FIG. 1 to FIG. 9, a microwave is oscillated by using a semiconductor element instead of a magnetron, Wave: SSMW) method. The semiconductor used in this case is a silicon-based Lateral Diffused-Metal Oxide Semiconductor diode (LDMOS) field-effect transistor (FET).

10 shows a plasma generating apparatus using a semiconductor microwave power supply. A semiconductor microwave generating apparatus is a method of oscillating a microwave using a semiconductor instead of a magnetron used in the past. The semiconductor microwave generation module includes an AC-DC conversion inverter 225 for converting the AC input power source 231 supplied to the power supply 121 to DC, since the DC power supply needs to be supplied, Control Board 221 and the semiconductor microwave generation module 223. Also, in order to set and control the microwave power to be supplied, the power control board exchanges signals with the outside through a communication gateway (GateWay) 233. External communication methods are Analog, Profibus, CanOpen, or Modbus RS232 / RS485. In operation, when the semiconductor microwave module is not properly matched, a cooling line 131 is installed to cool and generate reflected waves. In the cooling method, since only the fan is installed without supplying the cooling water in the case of the air cooling, the air supplied from the fan is released to the outside of the power supply with heat, so that the installation is relatively easy. However, when the reflected wave power is large, it is safe to install a cooling water line because it generates a lot of heat and can be fatal to microwave semiconductor devices.

10 shows a method of generating microwaves by a high-frequency semiconductor module built up to a cooling water line and transferring the generated microwaves to an applicator. 10, the microwave generated by the high-frequency semiconductor module is transmitted to the applicator through a connector, a coaxial cable, and a coaxial cable-waveguide conversion adapter attached to the power supply unit end. The semiconductor microwave generator module 223 is protected through immediate automatic reduction and interruption of the supplied power when the reflected wave is generated. In FIG. 10, the cooling line of the isolator is not illustrated, but the cooling line 131 supplied to the semiconductor microwave generator module 223 may be shared or individually installed. 11 illustrates plasma generation by one linear antenna using a semiconductor microwave generating apparatus. A microwave is generated from the semiconductor microwave generating power supply 121 and connected to a linear plasma antenna through a connector (coaxial) -> coaxial cable -> connector (coaxial). 11 shows that the microwave energy is transferred to generate plasma.

11 illustrates plasma generation by one linear antenna using a semiconductor microwave generating apparatus. A microwave is generated from the semiconductor microwave generating power supply 121 and connected to a linear plasma antenna through a connector (coaxial) -> coaxial cable -> connector (coaxial). It is shown in FIG. 11 that microwave energy is transferred by this method to generate plasma. As shown in FIG. 11, when a microwave generated from a conventional magnetron is connected to a waveguide flange and a semiconductor very high frequency generating module and a frequency modulation tuning method are used in comparison with a method using an isolator, a tuner, Is much smaller and easier to install.

The microwave generator using such a semiconductor device has the following advantages. (1) Maximum permissible power (for example, the maximum allowable power is about 300 ~ 500 Watt depending on the outer diameter of the coaxial cable whose impedance is matched). (2) The frequency is capable of modulating a frequency of 2450 MHz, that is, 2450 MHz to 50 MHz (2400 to 2500 MHz range) up and down at 2450 MHz. (3) It has a longer life than the magnetron method. (4) It is possible to embed a small-sized isolator inside the power supply, and protects the generator circuit through instantaneous automatic reduction and interruption of the supplied power when reflected waves are generated. (5) It is small in volume and light in weight. (6) Incident wave power and reflected wave power can be measured accurately. (6) Less ripple and higher power transfer efficiency. (7) In the case of an industrial application requiring a plurality of applicators (such as the necessity of covering a large area), it is possible to accomplish the purpose of the user by optimizing and installing it in various ways.

If coaxial cable is used, it will be applied in the low power range of 300 to 500 Watt or less, but this will be improved and microwave transmission at higher power is possible. In addition, a plurality of microwave transmission devices oscillated by the respective high-frequency semiconductor modules are separately installed (refer to FIG. 13 and FIG. 14) depending on the application field even before a coaxial cable having a maximum allowable power value is outputted or another transmission method is applied It is possible to fine-tune the application device by separately distributing and transmitting the microwaves of the appropriate power (energy) required by the device, and individually adjusting each high-frequency semiconductor power module. Therefore, the present invention is characterized by a transmission system and an apparatus using such a plurality of microwave power supplies, transmission lines, adapters, and the like.

Microwave refers to a region of electromagnetic wave having a frequency (frequency) of 300 MHz to 30 GHz and a wavelength of 1 cm to 1 m. The area of the electromagnetic wave is arbitrarily divided by the frequency, and the frequency is the number of times the wave vibrates for one second. The unit of frequency is expressed in Hz, and 1 Hz indicates that the wave oscillated once in one second. The relationship between frequency (f), wavelength (), and speed of light (C) is as follows.

              = C / f (1)

That is, the shorter the wavelength, the smaller the frequency of the electromagnetic wave having a larger frequency and a longer wavelength. Here, the speed of light C is 2.99792458 * 10 ⁸ m / s.

Depending on the wavelength, electromagnetic waves are classified into gamma rays, x-rays, ultraviolet rays, visible rays, infrared rays, microwaves, and radio waves from the shortest region. That is, a microwave is a wave having a lower frequency and a longer wavelength than light, but has a larger frequency and shorter wavelength in the propagation, and is used in various industrial fields such as radar, navigation, communication, heating, and plasma as described above. The tansmission length Li for impedance matching is:

              Li = / 4 (2)

 The microwave transmission adapter is fabricated by the above-mentioned transmission length. Even when a semiconductor device is used to oscillate a microwave, a reflected wave can be generated due to mismatch of impedance. In a microwave device using a semiconductor device, since the frequency of a semiconductor device can be changed within a certain range, it is possible to perform impedance matching by modulating the frequency by (Equation 1) and (Equation 2). In the present invention, And an impedance matching method. That is, in the present invention, when the applicator and the impedance are not matched or are incompatible due to the non-matching Li, the reflected wave is minimized by an algorithm for adjusting and tuning the frequency. That is, when a signal is generated from a semiconductor module and output, it is possible to modulate the frequency. Therefore, it is possible to perform matching through such frequency modulation. This is called a Frequency Variation Tuning Method (FVMM). To summarize, the present invention discloses a microwave system equipped with an impedance matching method of the frequency modulation type (FVTM) as a method of not using a conventional tuner (matching device). In this case, Can be used.

In addition, when the semiconductor microwave power supply device and the applicator are connected by a coaxial cable, it is possible to further tune (match) the coaxial impedance by using a coaxial impedance adjusting device therebetween. This coaxial or coaxial impedance tuner method Impedance Tuning Method. An example of the installation of the coaxial impedance tuner 228 using this method is illustrated in Fig. It is installed between the semiconductor microwave generator 121 and the applicator 117 and is connected by a coaxial cable. The coaxial impedance tuner 228 is configured to change the impedance, which can be manually or automatically adjusted. That is, the magnitude of the reflected wave measured by the microwave detection sensor is displayed on the power supply device 121, thereby adjusting the impedance of the coaxial impedance tuner 228 automatically or manually to adjust the direction to minimize the reflected wave. And that it can be installed in the microwave power supply device 121 naturally when tuning is performed automatically. In addition to the frequency modulation tuning method, the present invention also includes a coaxial impedance tuning method.

In addition, in the present invention, as another matching method other than the conventional method such as the 3-stub tuner (or the 4-stub tuner) or the new matching method such as the frequency modulation described above, a plunger is combined with the applicator, Or a method in which matching can be performed automatically. The applicator 117 can be connected in the form of a waveguide or a coaxial cable. The plunger 119 may be installed behind the applicator 117 and tuned. The plunger 119 can be either waveguide or coaxial.

In sum, the present invention includes a method of using frequency modulation tuning, impedance matching using a coaxial impedance tuner 228 or plunger 119 to minimize reflected waves.

Further, in the present invention, when an instantaneous reflected wave is generated, an isolator provided with a cooling line for protecting the high-frequency semiconductor module by diffracting the reflected wave to protect the microwave generator is miniaturized, .

The concept of a plurality of semiconductor microwave generators is shown in Fig. A plurality of power modules (power supply, power module, and PoM) 121 are installed, and an applicator is applied to each module. Each applicator may be a partial applicator of the entire applicator or a completely separate, independent applicator. As illustrated in FIG. 10, each power supply module has its own control board, and there is a communication system capable of communicating with an external light. Therefore, it is possible to centrally control each power module in a central computer (PC) 501 system or a PLC (programmable logic controller) 501. Modbus RS232 / RS485 method is used when PC is used, and Profibus, CanOpen, etc. when PLC is used. The central control computer system 501 sets a desired power value for each power module 121 and optimizes the power of the set value for each power module 121 to execute. Each module transmits the measured forward power and reflected power after execution to the central control computer system 501 via the communication gateway 233. [ The central control computer system 501 receives the data values, displays and compares them with the set values, determines whether the desired specifications of the application are satisfied, and instructs the next command according to the optimization algorithm. A HMI (Human Machine DIsplay) display 505 is installed in a central control computer system 501 installed next to a micro application device to monitor the operation state of each power module 121 in the field. When a micro-application device which may be dangerous due to a leakage problem is installed in an isolated space, a multi-monitor 507 is used in a separate control room through a remote interface device, The forward power and the reflected power, and the registration process trajectory curve are monitored on the Smith chart. The microwave application apparatus can be made thinner and thinner and the microwave can be branched and used through the above-described method, and at the same time, there is a great advantage that it can be applied in various ways suited to various purposes of the user.

An example of an apparatus for transmitting a microwave using the plurality of semiconductor micro power modules is exemplified in Fig. It is very difficult to generate a large-area plasma to maintain uniformity. In particular, a large-area plasma source for processing wafers of 12 inches or more and LCDs of 5 to 8 generations or more is absolutely necessary. It is very difficult to make a large-area plasma homogeneous by using one microwave power supply and one applicator. In addition, when the shape of each reaction chamber, the flow pattern of the gas, the inlet of the gas, and the radical are generated and used, it is necessary to control and supply the plasma according to the processing conditions such as the shape of the radical distributor. It is almost impossible to adjust the desired uniformity and throughput. Therefore, it is necessary to divide it into multiple sources and construct a single large source. As shown in FIG. 14, the power of each power module is supplied to a coaxial bar wrapped around each insulator to form a linear plasma, and a plurality of such linear plasma antennas are installed to combine and form a plasma source, Plasma (Large Area Plasma) is constituted. In this case, since a plurality of power supply devices must be connected and used, it is disadvantageous in that it is complex and expensive to construct the entire device. As a method for improving this, it is possible to transmit a microwave by a method of collecting linear plasma antennas in parallel and connecting them to one coaxial rod (see FIG. 15) Do.

  The present invention discloses a new method and an example of a semiconductor microwave generation method and apparatus, and individual applications such as plasma are described in detail as separate inventions and separately filed.

In addition to the method of using a plurality of high frequency semiconductor power modules as in the case of the example of FIG. 14 described above, a separate method of oscillating and delivering microwaves using a conventional magnetron is also possible. In the case of a multiple linear plasma source composed of several coaxial antennas (see Figure 14), each microwave device can be individually connected to each coaxial bar. That is, in this case, a plurality of individual microwave power supplies having a magnetron, an isolator, a tuner (both ends in the form of waveguides) and a waveguide-to-coaxial cable switching adapter as illustrated in FIG. 9 are connected to a final waveguide- One-to-one connection to the coaxial rods of the linear plasma source by connecting them with respective coaxial cables through the connector of the adapter. Therefore, in this case, it is necessary to connect a plurality of power supply devices having respective magnetrons, isolators, tuners, and waveguide-coaxial cable conversion adapters to respective coaxial rods, There are disadvantages.

In order to solve the above problems, it is possible to use a single power supply, a magnetron and a waveguide to process the coaxial antennas of the linear plasma to receive microwaves to be bundled in parallel. In this case, the microwaves transmitted through the magnetron and waveguide are converted into coaxial cables or coaxial rods by using a coaxial (cable) -waveguide conversion adapter, and then the coaxial rods of the respective linear plasmas are connected in parallel. This method is illustrated in FIG. When a vacuum is required to generate plasma, an o-ring or a metal gasket for vacuum is disposed on the surface of the coaxial rod array plate to maintain the vacuum state. In addition, in order to minimize the influence of the metal rod on the application process (such as generation of process pollutants), the periphery of the metal rod is wrapped with a material such as quartz or sapphire, which is an insulating material and can transmit microwaves. In addition, if necessary, a metal sealing rod and a vacuum sealing adapter are provided so that a vacuum is maintained at both ends of such insulating material.

In the above method, a microwave generated in one magnetron is connected in the order of a waveguide -> waveguide - coaxial cable conversion adapter -> coaxial cable -> coaxial rod antenna, and a plurality of antennas of the linear plasma source are assembled, It is a method of connecting to a rod and delivering it. Apart from this method, it is also possible to branch the waveguide using a waveguide splitter, connect it separately to the coaxial rods of the respective linear plasma antennas, or connect the coaxial rods to the partially parallel coaxial rods. That is, in this case, waveguide -> waveguide splitter -> multiple waveguides - coaxial cable conversion adapter -> multiple coaxial cables -> multiple coaxial rods. The case of connecting to the parallel-assembled coaxial rods is illustrated in Fig. However, in this case, since only one power is used, it is difficult to individually control and control the power supplied to each linear plasma and the linear temperature and electron density of each linear plasma electron. It is possible to use a coaxial cable splitter instead of the method using a waveguide splitter as one of the methods apart from the above method. That is, a microwave generated from one magnetron is connected to a waveguide-> waveguide- coaxial cable conversion adapter-> coaxial cable-> coaxial cable splitter-> multiple coaxial cables-> multiple coaxial rod antennas, It will be apparent to those skilled in the art that various changes and modifications may be made without departing from the scope of the present invention.

Although the present invention has been described with reference to a method of using a coaxial cable or a waveguide, it is also possible to use a microwave as a transmission line method, a strip line method or other methods, And adapting a suitable conversion adapter.

In summary, in the present invention, the microwave generated by using one high power and magnetron as described above is distributed to the application device by using a conversion adapter, a coaxial cable, a splitter, etc., Also included is a method of

As described above, the present invention is characterized by a microwave application device that transfers microwaves generated by a high-frequency semiconductor device, a transmission line, and an adapter. In this way, weight and volume are smaller and installation is easier. In addition, it is possible to transmit and control fine uniformity, large-scale microwave energy in various fields by separately installing and transmitting a plurality of the microwave energy. In addition, in the present invention, even if a microwave is generated by using a conventional magnetron, even if a microwave is generated by using a waveguide-coaxial cable conversion adapter and a splitter, etc., / RTI &gt;

It will be understood by those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.

Therefore, it is to be understood that the present invention is not limited to the above-described embodiments. Accordingly, the true scope of the present invention should be determined by the technical idea of the appended claims. It is also to be understood that the invention includes all modifications, equivalents, and alternatives falling within the spirit and scope of the invention as defined by the appended claims.

The symbols of the processing apparatus using microwave according to the present invention shown in the accompanying drawings are defined as follows.
111: Magnetron
112: Waveguie
113: Circulator
115: 3-stub tuner
117: Applicator
119: Plunger or Sliding Short Circuit
121: Microwave Power Supply (Microwave Power)
131: Cooling Line
151: Coaxial cable
153: Connector
155: Coaxial cable and waveguide conversion adapter (Co-axial Transition Adapter)
156: metal coaxial rods
157: Insulation material such as quartz, sapphire or tempered glass
159: Vacuum sealing adapter for metal rod and insulation
171: Plasma
173: Antenna
175: Coaxial rod array plate for generating plasma
181: Microwave Splitter
161: [Wafer etc.] Substrate:
165: Holder with Cooling Line (Wafer Holder with Cooling Line)
221: Automatic Control Board
223: Semiconductor microwave generating module
225: AC-DC conversion inverter
231: Power supply
233: Gateway for External Communication
501: PC or PLC automatic control system
503: CPU or Cotroller Board
505: Human-Machine-Interface (HMI) Display
507: Multi-Monitor

Claims (15)

A high frequency semiconductor module for oscillating a microwave;
An AC-DC conversion inverter for converting input AC power into DC power and supplying power to the semiconductor module;
An automatic control board for regulating and supplying power and reducing or blocking power during generation of reflected waves;
An electric power applied applicator;
A power supply device having a gateway for sending and receiving signals to and from the outside; And
And an isolator that is embedded in the power supply device to protect the high-frequency semiconductor module by diffracting reflected waves.
The method according to claim 1,
Further comprising a control algorithm that modulates the frequency when the reflected wave power is generated in the power supply device to minimize the reflected wave power.
The method according to claim 1,
Further comprising a coaxial cable impedance tuner to minimize reflected wave power when reflected wave power is generated.
The method according to claim 1,
Wherein the plunger is mounted on the applicator to transmit the microwave while minimizing the reflected wave power.
The method of claim 1, wherein
Wherein the power supply device and the applicator are connected to each other through a connector and a coaxial cable transmission line to transmit the microwave.
The method of claim 1, wherein
Wherein the power supply device and the applicator are connected to each other by a connector, a coaxial cable, and a coaxial conversion adapter to transmit the microwave.
A plurality of multiple high frequency semiconductor power supply devices for oscillating microwaves;
A plurality of transmission lines and a transmission adapter for transmitting power from the power supply;
A plurality of power-supplied applicators;
A communication gateway that measures and feeds backward power and reflected wave power among power supplied to each applicator in the plurality of power supply devices;
A display device for indicating the forward power and the reflected power;
A plurality of external monitors for displaying the power values and the matching process curve;
A central control computer for setting and delivering a power value desired by each user to supply from the power supply device, receiving the measured forward power and reflected power, transmitting the measured forward power and reflected power to the display device, and comparing and comparing the values; And
And a central automatic control computer that accurately and automatically controls the power value and communicates and operates the microwave application device through a communication device and a communication protocol.
8. The method of claim 7,
Further comprising a tuning control algorithm for modulating the frequency to minimize the reflected wave power when reflected power is generated in the plurality of power supply devices.
8. The method of claim 7,
Further comprising a coaxial cable impedance tuner to minimize reflected wave power when reflected wave power is generated.
8. The method of claim 7,
Wherein the plunger is mounted on the applicator to transmit the microwave while minimizing the reflected wave power.
The method of claim 7, wherein
Wherein the power supply device and the applicator are connected to each other through a connector and a coaxial cable transmission line to transmit the microwave.
The method of claim 7, wherein
Wherein the power supply device and the applicator are connected to each other by a connector, a coaxial cable, and a coaxial conversion adapter to transmit the microwave.
A magnetron module for oscillating a microwave;
An AC-to-DC converter inverter for converting input AC power to DC and supplying power to the magnetron;
An automatic control board for regulating and supplying power and reducing or blocking power during generation of reflected waves;
A power supply device having a gateway for sending and receiving signals to and from the outside;
An algorithm for minimizing the reflected wave by the tuner when reflected power is generated in the power supply device;
An isolator in the power supply device to protect the high frequency semiconductor module by diffracting the reflected wave;
A microwave system comprising converting a microwave into a coaxial cable form using a waveguide-to-coaxial (cable) switching adapter and delivering the microwave by a coaxial cable
14. The method of claim 13,
A microwave system in which a microwave transferred to a magnetron and a waveguide is connected to a coaxial rod that is bundled in parallel with each linear antenna using a waveguide-to-coaxial (cable) switching adapter and a coaxial cable.
14. The method of claim 13,
The microwaves transmitted to the magnetron and the waveguide are connected to a respective coaxial rod or subset of coaxial rods of each linear antenna using a waveguide or coaxial cable splitter, a waveguide-to-coaxial cable changeover adapter and a coaxial cable, system.

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