CN116230643A - Ceramic substrate for GaN device and preparation method thereof, gaN device and preparation method thereof - Google Patents
Ceramic substrate for GaN device and preparation method thereof, gaN device and preparation method thereof Download PDFInfo
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- CN116230643A CN116230643A CN202310245635.7A CN202310245635A CN116230643A CN 116230643 A CN116230643 A CN 116230643A CN 202310245635 A CN202310245635 A CN 202310245635A CN 116230643 A CN116230643 A CN 116230643A
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- 239000000758 substrate Substances 0.000 title claims abstract description 57
- 239000000919 ceramic Substances 0.000 title claims abstract description 51
- 238000002360 preparation method Methods 0.000 title claims abstract description 21
- 238000000151 deposition Methods 0.000 claims abstract description 18
- 238000007788 roughening Methods 0.000 claims abstract description 16
- 230000004888 barrier function Effects 0.000 claims abstract description 13
- 230000000903 blocking effect Effects 0.000 claims abstract description 3
- 229910002601 GaN Inorganic materials 0.000 claims description 65
- 238000000034 method Methods 0.000 claims description 23
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 19
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 18
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 14
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 12
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 12
- 229920005591 polysilicon Polymers 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 235000012239 silicon dioxide Nutrition 0.000 claims description 7
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- 239000013078 crystal Substances 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- 239000007788 liquid Substances 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 238000005406 washing Methods 0.000 claims description 3
- 230000017525 heat dissipation Effects 0.000 description 8
- 230000008569 process Effects 0.000 description 6
- 230000009286 beneficial effect Effects 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 239000000047 product Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 4
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000004381 surface treatment Methods 0.000 description 3
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- 244000282866 Euchlaena mexicana Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- -1 alkali metal oxalate Chemical class 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/15—Ceramic or glass substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3731—Ceramic materials or glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Ceramic Products (AREA)
Abstract
The embodiment of the invention relates to a ceramic substrate for a GaN device, a preparation method of the ceramic substrate, and a GaN device and a preparation method of the GaN device. Roughening the surface of the bonding side of the ceramic substrate; depositing a bonding layer on the roughened ceramic substrate; depositing and growing a conductive layer on the bonding layer; depositing a growth blocking layer on the conductive layer; growing a GaN device bonding layer on the barrier layer; and carrying out surface planarization treatment on the GaN device bonding layer to bear the GaN device.
Description
Technical Field
The invention relates to the technical field of GaN devices, in particular to a ceramic substrate for a GaN device and a preparation method thereof, and a GaN device and a preparation method thereof.
Background
Power devices originally belong to the discrete device sub-class in the semiconductor industry, but with the continuous improvement of manufacturing processes, some products can be produced in combination with integrated circuits at present. After the appearance of the power IC, the power semiconductor market is enriched from a single power device product to a coexistence of a power device and a power integrated circuit product, and the whole power semiconductor market currently presents a coexistence situation of multiple generations of products due to the fact that the power semiconductor products of each generation are iterated continuously in a self-structure system and have advantages in different application fields and production cost.
The wide band gap power device has stronger advantages in the application fields of high voltage, high temperature and high frequency compared with the traditional silicon-based device because of large band gap, high breakdown electric field, high heat conductivity, strong radiation resistance and high frequency, but with continuous development of the power device, heat dissipation becomes a key technology for influencing the performance and reliability of the device. For electronic devices, the effective lifetime of the device is typically reduced by 30% -50% for every 10 ℃ increase in temperature. Therefore, how to improve the heat dissipation capability of the device becomes a technical bottleneck for developing the power device.
The ceramic material has the performances of high heat conductivity, good heat resistance, high insulation, high strength, thermal matching with chip materials and the like, and is very suitable for being used as a power device packaging substrate. However, for GaN devices, these adverse factors affect the device reliability because stress of the heterostructure material affects both the mechanical properties of the substrate and the adhesion capability of the interface.
Therefore, on the premise of maintaining good heat dissipation performance, how to further improve the adhesion of the ceramic substrate and help to reduce the wafer stress becomes a problem to be solved.
Disclosure of Invention
The invention aims to provide a ceramic substrate for a GaN device and a preparation method thereof, and a GaN device and a preparation method thereof. The structure of the ceramic substrate is beneficial to reducing the stress of the wafer, the adhesion force of the ceramic substrate is improved, good contact is formed and good heat dissipation performance is maintained through roughening treatment, the growth of the GaN device bonding layer and surface treatment, and impurities in the ceramic substrate can be effectively prevented from affecting the performance of the GaN device through the arrangement of the barrier layer.
To this end, in a first aspect, an embodiment of the present invention provides a method for preparing a ceramic substrate for a GaN device, including:
roughening the surface of the bonding side of the ceramic substrate;
depositing a bonding layer on the roughened ceramic substrate;
depositing and growing a conductive layer on the bonding layer;
depositing a growth blocking layer on the conductive layer;
growing a GaN device bonding layer on the barrier layer;
and carrying out surface planarization treatment on the GaN device bonding layer to bear the GaN device.
Preferably, the roughening treatment includes:
and immersing the ceramic substrate into ceramic roughening liquid for roughening for 2-10min, taking out, washing and drying.
Preferably, the deposition of the bonding layer is specifically performed by means of Low Pressure Chemical Vapor Deposition (LPCVD), and the bonding layer is silicon oxide formed by tetraethyl orthosilicate (TEOS) deposition, and the thickness is 50-200nm.
Preferably, the conductive layer is polysilicon, obtained by Low Pressure Chemical Vapor Deposition (LPCVD) or Plasma Enhanced Chemical Vapor Deposition (PECVD), and the thickness of the polysilicon is 100-200nm.
Preferably, the polysilicon is doped polysilicon, the doping type is n-type or p-type, and the doping concentration is 5×10 18 -1×10 20 cm -3 。
Preferably, the barrier layer is silicon nitride obtained by a Low Pressure Chemical Vapor Deposition (LPCVD) or Plasma Enhanced Chemical Vapor Deposition (PECVD) method, and the thickness of the silicon nitride is 100-500nm.
Preferably, the bonding layer is silicon dioxide, and is prepared by a chemical vapor deposition method, and the thickness of the silicon dioxide layer is 500-2000nm.
In a second aspect, an embodiment of the present invention provides a ceramic substrate for a GaN device, which is prepared by the preparation method described in the first aspect.
In a third aspect, an embodiment of the present invention provides a method for manufacturing a GaN device, including:
bonding a substrate for manufacturing a GaN device to a ceramic substrate for a GaN device manufactured by the manufacturing method of any one of claims 1 to 7 by bonding; the substrate comprises a gallium nitride single crystal, sapphire, single crystal silicon and silicon carbide single crystal substrate on which a GaN epitaxial layer is grown;
and preparing a GaN device on the GaN epitaxial layer.
In a fourth aspect, an embodiment of the present invention provides a GaN device manufactured by a method for manufacturing a GaN device according to the third aspect.
According to the preparation method of the ceramic substrate for the GaN device, provided by the embodiment of the invention, the structure of the ceramic substrate is beneficial to reducing the stress of a wafer, the roughening treatment, the growth of the GaN device bonding layer and the surface treatment are beneficial to improving the adhesive force of the ceramic substrate, forming good contact and keeping good heat dissipation performance, impurities in the ceramic substrate can be effectively prevented from affecting the performance of the GaN device through the arrangement of the barrier layer, in addition, the interface defect can be further eliminated through the planarization treatment, and better bonding force is provided, so that the GaN device can have better heat dissipation performance and smaller mechanical stress.
Drawings
FIG. 1 is a flowchart of a method for preparing a ceramic substrate for GaN devices according to an embodiment of the invention;
FIG. 2 is a schematic diagram of a preparation process of a ceramic substrate for GaN devices according to an embodiment of the invention;
fig. 3 is a flowchart of a method for manufacturing a GaN device according to an embodiment of the present invention;
fig. 4 is a schematic diagram of a preparation process of a GaN device according to an embodiment of the invention.
Detailed Description
The technical scheme of the invention is further described in detail through the drawings and the embodiments.
The embodiment of the invention provides a preparation method of a ceramic substrate for a GaN device, which is shown in fig. 1, and mainly comprises the following steps:
and (3) immersing the ceramic substrate into ceramic roughening liquid for roughening for 2-10min, taking out, washing and drying.
The ceramic roughening liquid may be one with chromic anhydride and sulfuric acid as strong oxidant, and may include ammonium fluoride, oxalic acid, alkali metal oxalate and other matter. The roughness of the ceramic surface is improved by coarsening the ceramic substrate surface so as to ensure good adhesive force.
the deposition of the adhesion layer is in particular carried out by means of Low Pressure Chemical Vapor Deposition (LPCVD), the adhesion layer preferably being silicon oxide deposited from tetraethyl orthosilicate (TEOS) with a thickness of 50-200nm.
TEOS is tetraethyl orthosilicate Si (OCH) 2 CH 3 ) 4 In the low pressure vapor deposition process of TEOS, TEOS vapor may be carried into the process furnace by a bubbler or liquid injector. The gas introduced into the process chamber does not contain moisture, avoiding the generation of polymers. In the TEOS silicon oxide process, the silicon oxide is formed by inert gas such as N 2 Or Ar, carrying TEOS into a process chamber at 450-750 ℃, and splitting and adsorbing TEOS molecules on the surface of a wafer, and then thermally decomposing the TEOS molecules into O-SI-O and byproducts from the surface. The film formed by the low-pressure vapor deposition oxidation process has good coverage and uniformity and better thermal stability.
the conductive layer is polysilicon, which is obtained by Low Pressure Chemical Vapor Deposition (LPCVD) or Plasma Enhanced Chemical Vapor Deposition (PECVD), and has a thickness of 100-200nm.
The polysilicon is doped polysilicon, the doping type is n-type or p-type, and the doping concentration is 5×10 18 -1×10 20 cm -3 . The doped ions may be As, P or B.
If the polysilicon is directly formed on the ceramic substrate, the problem of poor adhesion is solved by growing a TEOS oxide layer with good adhesion in advance and then preparing the conductive layer.
the barrier layer is preferably silicon nitride, and may be silicon carbide, obtained by Low Pressure Chemical Vapor Deposition (LPCVD) or Plasma Enhanced Chemical Vapor Deposition (PECVD), and has a thickness of 100-500nm.
The barrier layer can effectively block impurities in the ceramic substrate, especially metal impurities, from entering the GaN device in the subsequent process, so that the influence on the performance of the GaN device is effectively avoided.
After the barrier layer grows, the ceramic substrate is entirely covered.
the GaN device bonding layer is silicon dioxide and is prepared by a chemical vapor deposition method, and the thickness of the silicon dioxide layer is 500-2000nm.
And 160, carrying out surface planarization treatment on the GaN device bonding layer to bear the GaN device.
A bonding layer with few defects, compactness and flatness is formed on the surface of a ceramic substrate by performing Chemical Mechanical Polishing (CMP) treatment on the deposited and grown silicon dioxide. Preferably, the bonding layer thickness after the planarization treatment is 100-1000nm.
Thus, the ceramic substrate for GaN device of the present invention is formed, and the structure is shown in fig. 2.
On this basis, a GaN device was obtained through the following steps. As shown in fig. 3.
And step 170, bonding the substrate of the GaN device with the planarized bottom surface on the ceramic substrate in a bonding mode.
The substrate of the GaN device comprises a substrate of any one of gallium nitride single crystal, sapphire, single crystal silicon and silicon carbide single crystal which are grown with a GaN epitaxial layer;
and 180, annealing the formed ceramic base plate carrying the substrate.
The material may be further stress relieved by annealing, preferably at a temperature of 250-350 c for a period of 2-6 hours.
And 190, preparing the GaN device on the GaN epitaxial layer.
The preparation process of the GaN device can be realized through steps of photoetching, etching, oxidation, deposition, injection, metallization and the like according to design requirements, and will not be further described herein. The preparation is carried out according to the conventional preparation flow.
Thus, the GaN device of the present invention is formed, and the structure is shown in fig. 4.
According to the preparation method of the ceramic substrate for the GaN device, provided by the embodiment of the invention, the structure of the ceramic substrate is beneficial to reducing the stress of a wafer, the roughening treatment, the growth of the GaN device bonding layer and the surface treatment are beneficial to improving the adhesive force of the ceramic substrate, forming good contact and keeping good heat dissipation performance, impurities in the ceramic substrate can be effectively prevented from affecting the performance of the GaN device through the arrangement of the barrier layer, in addition, the interface defect can be further eliminated through the planarization treatment, and better bonding force is provided, so that the GaN device can have better heat dissipation performance and smaller mechanical stress.
The foregoing description of the embodiments has been provided for the purpose of illustrating the general principles of the invention, and is not meant to limit the scope of the invention, but to limit the invention to the particular embodiments, and any modifications, equivalents, improvements, etc. that fall within the spirit and principles of the invention are intended to be included within the scope of the invention.
Claims (10)
1. A method for preparing a ceramic substrate for a GaN device, the method comprising:
roughening the surface of the bonding side of the ceramic substrate;
depositing a bonding layer on the roughened ceramic substrate;
depositing and growing a conductive layer on the bonding layer;
depositing a growth blocking layer on the conductive layer;
growing a GaN device bonding layer on the barrier layer;
and carrying out surface planarization treatment on the GaN device bonding layer to bear the GaN device.
2. The production method according to claim 1, wherein the roughening treatment comprises:
and immersing the ceramic substrate into ceramic roughening liquid for roughening for 2-10min, taking out, washing and drying.
3. The method according to claim 1, wherein the deposition of the bonding layer is performed by means of Low Pressure Chemical Vapor Deposition (LPCVD), and the bonding layer is silicon oxide formed by tetraethyl orthosilicate (TEOS) deposition, having a thickness of 50-200nm.
4. The method of claim 1, wherein the conductive layer is polysilicon, obtained by Low Pressure Chemical Vapor Deposition (LPCVD) or Plasma Enhanced Chemical Vapor Deposition (PECVD), and the polysilicon has a thickness of 100-200nm.
5. The method according to claim 4, wherein the polysilicon is doped polysilicon having a doping type of n-type or p-type and a doping concentration of 5×10 18 -1×10 20 cm -3 。
6. The method of claim 1, wherein the barrier layer is silicon nitride, obtained by Low Pressure Chemical Vapor Deposition (LPCVD) or Plasma Enhanced Chemical Vapor Deposition (PECVD), and the thickness of the silicon nitride is 100-500nm.
7. The method of claim 1, wherein the bonding layer is silicon dioxide, and the silicon dioxide layer is prepared by chemical vapor deposition, and has a thickness of 500-2000nm.
8. A ceramic substrate for a GaN device prepared by the preparation method of any one of claims 1 to 7.
9. A method for manufacturing a GaN device, the method comprising:
bonding a substrate for manufacturing a GaN device to a ceramic substrate for a GaN device manufactured by the manufacturing method of any one of claims 1 to 7 by bonding; wherein the substrate comprises a gallium nitride single crystal, sapphire, single crystal silicon or silicon carbide single crystal substrate on which a GaN epitaxial layer is grown;
and preparing a GaN device on the GaN epitaxial layer.
10. A GaN device prepared by the preparation method of claim 9.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310245635.7A CN116230643A (en) | 2023-03-09 | 2023-03-09 | Ceramic substrate for GaN device and preparation method thereof, gaN device and preparation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310245635.7A CN116230643A (en) | 2023-03-09 | 2023-03-09 | Ceramic substrate for GaN device and preparation method thereof, gaN device and preparation method thereof |
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| CN116230643A true CN116230643A (en) | 2023-06-06 |
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