CN116230570A - Wafer thickness measuring system and method - Google Patents
Wafer thickness measuring system and method Download PDFInfo
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- CN116230570A CN116230570A CN202310118338.6A CN202310118338A CN116230570A CN 116230570 A CN116230570 A CN 116230570A CN 202310118338 A CN202310118338 A CN 202310118338A CN 116230570 A CN116230570 A CN 116230570A
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- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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Abstract
The application discloses a wafer thickness measuring system and a method, wherein the system comprises a display module, an industrial personal computer, an electrical control module and a signal acquisition module; the signal acquisition module comprises a photographing unit, a gas control unit and a thickness measuring unit. The display module is used for acquiring the initial thickness, the target thickness, the preset threshold value and the time frequency of the wafer and displaying the test result. The industrial personal computer sends a test signal to the electrical control module according to the time frequency, sends a test instruction to the electrical control module, receives and calculates test data, and then sends a test result to the display module. And the electrical control module controls the photographing unit to photograph according to the test signal, sends picture data to the main control computer, receives and controls the gas control unit and the thickness measuring unit to test according to the test instruction, and sends test data to the industrial personal computer. Therefore, the thickness of the wafer is directly measured, the thickness measurement is not required to be indirectly performed through measuring other objects, the reliability of measurement is high, and the measurement accuracy is improved.
Description
Technical Field
The present disclosure relates to the field of wafer measurement technologies, and in particular, to a wafer thickness measurement system and method.
Background
The wafer is a silicon wafer used for manufacturing a silicon semiconductor integrated circuit, and various circuit element structures can be manufactured by processing the silicon wafer, thereby forming an integrated circuit product. Therefore, the wafer is the basis for manufacturing integrated circuit products, and the thickness of the wafer has a great influence on the performance of the wafer.
In the prior art, an online real-time thickness measuring system adopted in the double-sided grinding process of a wafer is generally difficult to contact with the surface of a workpiece, and an indirect thickness measuring method is generally adopted. For example, the thickness of the wafer is obtained by adopting a laser thickness measurement or contact dial indicator to measure thickness and calculating the change of the removal amount of the wafer by monitoring the change of the thickness of the upper grinding disc and the lower grinding disc in the processing process in real time, but the thickness of the wafer is measured by indirectly measuring other objects by the methods, so that the factors influencing the measurement error are more, the measured thickness error is larger, and the measurement accuracy is poor.
Disclosure of Invention
In view of the foregoing, embodiments of the present application provide a wafer thickness measurement system and method, which aim to improve the accuracy of wafer thickness measurement.
In a first aspect, an embodiment of the present application provides a wafer thickness measurement system, where the system includes a display module, an industrial personal computer, an electrical control module, and a signal acquisition module; the signal acquisition module comprises a photographing unit, a gas control unit and a thickness measuring unit;
the display module is used for acquiring the initial thickness of the wafer, the target thickness of the wafer, a preset threshold value and the thickness measuring time frequency, and displaying the thickness test result of the wafer;
the industrial personal computer is used for sending a test signal to the electrical control module according to the thickness measuring time frequency; according to a comparison result of the picture data returned by the electrical control module and preset picture data, a test instruction is sent to the electrical control module; receiving and calculating thickness test data to obtain the thickness test result, and sending the thickness test result to the display module;
the electrical control module is used for controlling the photographing unit to photograph according to the test signal so as to obtain the picture data, and sending the picture data to the main control computer; the gas control unit and the thickness measuring unit are controlled to conduct testing according to the testing instruction, so that thickness testing data are obtained, and the thickness testing data are sent to the industrial personal computer;
the photographing unit is used for photographing the wafer in response to the test signal to obtain the picture data;
the gas control unit is used for responding to the test instruction to perform gas injection on the wafer;
the thickness measuring unit is used for responding to the test instruction to perform thickness test on the wafer.
Optionally, the industrial personal computer is specifically configured to send a test instruction to the electrical control module when the wafer exposes the grinding disc according to a comparison result of the picture data returned by the electrical control module and the preset picture data.
Optionally, the electrical control module is specifically configured to receive the test instruction, control the gas control unit to perform gas injection through the test instruction, and simultaneously control the thickness measurement unit to perform thickness measurement through the test instruction so as to obtain thickness test data, and send the thickness test data to the industrial personal computer.
Optionally, the thickness measuring unit is specifically configured to:
and the thickness measuring unit is used for responding to the test instruction to carry out optical thickness test on the wafer.
Optionally, the industrial personal computer is specifically configured to receive the thickness test data, calculate an average value of valid data of the thickness test data to obtain the thickness test result, and send the thickness test result to the display module, where the valid data is thickness test data with a test thickness less than or equal to the initial thickness.
Optionally, the industrial personal computer is further configured to determine whether the thickness test result is within the target test thickness range, and if the thickness test result is within the target test thickness range, send a shutdown signal to the grinding device, where the target test thickness range is obtained by adding the target thickness and the preset threshold.
In a second aspect, an embodiment of the present application provides a wafer thickness measurement method, which is applied to a wafer thickness measurement system, where the wafer thickness measurement system includes a display module, an industrial personal computer, an electrical control module, and a signal acquisition module; the signal acquisition module comprises a photographing unit, a gas control unit and a thickness measuring unit, and the method comprises the following steps:
acquiring the initial thickness of a wafer, the target thickness of the wafer, a preset threshold value and a thickness measurement time frequency according to the display module, and displaying a thickness test result of the wafer;
the industrial personal computer sends a test signal to the electrical control module according to the thickness measuring time frequency; the industrial personal computer sends a test instruction to the electric control module according to a comparison result of the picture data returned by the electric control module and preset picture data; the industrial personal computer receives and calculates thickness test data to obtain the thickness test result, and sends the thickness test result to the display module;
the electrical control module controls the photographing unit to photograph according to the test signal so as to obtain the picture data, and sends the picture data to the main control computer; the electrical control module receives and controls the gas control unit and the thickness measuring unit to carry out testing according to the testing instruction so as to obtain the thickness testing data, and the thickness testing data is sent to the industrial personal computer; the photographing unit photographs the wafer in response to the test signal to obtain the picture data; the gas control unit responds to the test instruction to perform gas injection on the wafer; and the thickness measuring unit responds to the test instruction to perform thickness test on the wafer.
Optionally, the industrial personal computer sends a test instruction to the electrical control module according to a comparison result of the picture data returned by the electrical control module and preset picture data, and the test instruction comprises:
and the industrial personal computer sends a test instruction to the electric control module when the wafer exposes the grinding disc according to the comparison result of the picture data returned by the electric control module and the preset picture data.
Optionally, the electrical control module receives and controls the gas control unit and the thickness measurement unit to perform a test according to the test instruction, so as to obtain thickness test data, and sends the thickness test data to the industrial personal computer, including:
the electrical control module receives the test instruction, controls the gas control unit to spray gas through the test instruction, and simultaneously controls the thickness measuring unit to measure thickness through the test instruction so as to obtain thickness test data, and sends the thickness test data to the industrial personal computer.
Optionally, the thickness measurement unit performs thickness measurement on the wafer in response to the test instruction, including:
and the thickness measuring unit responds to the test instruction to carry out optical thickness test on the wafer.
Optionally, the industrial personal computer receives and calculates thickness test data to obtain the thickness test result, and sends the thickness test result to the display module, including:
the industrial personal computer receives the thickness test data, calculates the average value of effective data of the thickness test data to obtain the thickness test result, and sends the thickness test result to the display module, wherein the effective data is thickness test data with the test thickness smaller than or equal to the initial thickness.
Optionally, the method further comprises:
and the industrial personal computer judges whether the thickness test result is in the target test thickness range, if so, sends a stop signal to the grinding equipment, and the target test thickness range is obtained by adding the target thickness and the preset threshold value.
Compared with the prior art, the embodiment of the application has the following beneficial effects:
the embodiment of the application provides a wafer thickness measuring system and a method, wherein the system comprises a display module, an industrial personal computer, an electrical control module and a signal acquisition module; the signal acquisition module comprises a photographing unit, a gas control unit and a thickness measuring unit. The display module is used for acquiring the initial thickness of the wafer, the target thickness of the wafer, a preset threshold value and the thickness measuring time frequency, and displaying the thickness test result of the wafer. The industrial personal computer sends a test signal to the electric control module according to the thickness measurement time frequency, sends a test instruction to the electric control module according to a comparison result of the picture data returned by the electric control module and the preset picture data, receives and calculates thickness test data to obtain a thickness test result, and sends the thickness test result to the display module. The electrical control module controls the photographing unit to photograph according to the test signal so as to obtain picture data, sends the picture data to the main control computer, receives and controls the gas control unit and the thickness measuring unit to test according to the test instruction so as to obtain thickness test data, and sends the thickness test data to the industrial personal computer; the photographing unit is used for photographing the wafer in response to the test signal to obtain picture data; a gas control unit for performing gas injection on the wafer in response to the test instruction; and the thickness measuring unit is used for responding to the test instruction to perform thickness test on the wafer. The thickness of the wafer can be directly measured in the double-sided grinding process, the thickness measurement is not required to be indirectly performed through measuring other objects, the reliability of measurement is high, and the measurement accuracy is improved.
Drawings
In order to more clearly illustrate the present embodiments or the technical solutions in the prior art, the drawings that are required for the embodiments or the description of the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of a wafer thickness measurement system according to an embodiment of the present disclosure;
fig. 2 is a top view of a signal acquisition module provided in an embodiment of the present application;
fig. 3 is a schematic structural diagram of a signal acquisition module according to an embodiment of the present application;
fig. 4 is a schematic diagram of a thickness control interface of a display module according to an embodiment of the present application;
fig. 5 is a flowchart of a wafer thickness measurement method according to an embodiment of the present application.
Detailed Description
In order to make the present application solution better understood by those skilled in the art, the following description will clearly and completely describe the technical solution in the embodiments of the present application with reference to the accompanying drawings in the embodiments of the present application, and it is apparent that the described embodiments are only some embodiments of the present application, not all embodiments. All other embodiments, which can be made by one of ordinary skill in the art without undue burden from the present disclosure, are within the scope of the present disclosure.
In the prior art, an online real-time thickness measuring system adopted in the double-sided grinding process of a wafer is generally difficult to contact with the surface of a workpiece, and an indirect thickness measuring method is generally adopted. For example, the thickness of the wafer is obtained by adopting a laser thickness measurement or contact dial indicator to measure thickness and calculating the change of the removal amount of the wafer by monitoring the change of the thickness of the upper grinding disc and the lower grinding disc in the processing process in real time, but the thickness of the wafer is measured by indirectly measuring other objects by the methods, so that the factors influencing the measurement error are more, the measured thickness error is larger, and the measurement accuracy is poor.
Based on this, in order to solve the above-mentioned problem, the embodiment of the application provides a wafer thickness measuring system and method, can directly measure thickness of a wafer through the cooperation of industrial computer, electric control module, signal acquisition module and display module, does not need to measure thickness through measuring other objects indirectly, and measuring reliability is high, has promoted measurement accuracy.
Referring to fig. 1, a schematic structural diagram of a wafer thickness measurement system according to an embodiment of the present application is provided. The system comprises a display module 101, an industrial personal computer 102, an electrical control module 103 and a signal acquisition module 104. The signal acquisition module 104 includes a photographing unit 1041, a gas control unit 1042, and a thickness measuring unit 1043. Referring to fig. 2 and 3, fig. 2 is a schematic structural diagram of a signal acquisition module, fig. 2 is a top view of fig. 3, a wafer in fig. 2 is a wafer for inspection, and a wafer in fig. 3 is a platform on which the wafer is placed.
The display module 101 is configured to obtain an initial thickness of the wafer, a target thickness of the wafer, a preset threshold value, and a thickness measurement time frequency, and display a thickness test result of the wafer.
In one possible embodiment, referring to fig. 4, fig. 4 is a schematic diagram of a thickness control interface of the display module, the initial thickness, the target thickness, a preset threshold value, and the time frequency of thickness measurement of the wafer may be input to the display module 101, where the preset threshold value may be an allowable error range, for example, plus or minus 0.5 micrometers. The time frequency of thickness measurement indicates the frequency of measurement in the double-sided grinding process, and the thickness measurement time frequency can be set by a thickness meter, as an example, the thickness measurement time frequency can be one round of test per minute, 10 times per round of test, and the test time can be 20:56:07, then inputting test data in the test 1 to the test 10 in turn, and marking effective data of the round, wherein the effective data is specifically thickness test data with the test thickness being less than or equal to the initial thickness. Further, as an example, the test time in fig. 4 is also labeled 20:57:07, 20:58:07, 20:59:07, 21:00:07, in order according to the test time 20:56: and (7) sequentially recording test data of each round according to the operation at the time of 07. The display module 101 may also display the thickness test result of the wafer, and may be displayed through a display screen or a touch screen, which is certainly not limited in the present application, and the display module 101 is displayed through the display screen or the touch screen, and does not affect the implementation of the embodiments of the present application.
The industrial personal computer 102 is used for sending a test signal to the electrical control module 103 according to the thickness measurement time frequency; according to the comparison result of the picture data returned by the electric control module 103 and the preset picture data, a test instruction is sent to the electric control module 103; thickness test data is received and calculated to obtain a thickness test result, which is sent to the display module 101.
In a possible implementation manner, during operation of the double-sided lapping device, the industrial personal computer 102 may send a test signal to the electrical control module 103 through the ethernet according to the input thickness measurement time frequency, where the double-sided lapping device may be a 16B-5L double-sided lapping device, and of course, the present application is not limited to the double-sided lapping device specifically, and does not affect implementation of the embodiments of the present application. The industrial personal computer 102 may send a test instruction to the electrical control module 103 according to a comparison result of the picture data returned by the electrical control module 103 and the preset picture data, and may specifically send a test instruction to the electrical control module 103 when the wafer is exposed out of the grinding disc according to the comparison result of the picture data returned by the electrical control module 103 and the preset picture data. As an example, the picture data returned by the electrical control module 103 is compared with preset picture data, when the wafer is exposed out of the grinding disc in the grinding process as a result of the comparison, the wafer is exposed, the wafer can be tested, and the industrial personal computer 102 sends a test instruction to the electrical control module 103 through the ethernet.
In a possible implementation manner, when the industrial personal computer 102 receives the thickness test data returned by the electrical control module 103, a thickness test result is obtained by calculating the thickness test data, specifically, logic determination and operation can be performed according to the thickness test data, an abnormal point appears and is displayed as NA, after the abnormal point is removed, the effective data of each round of test is calculated, that is, the thickness test data after the abnormal point is removed, the effective data is specifically, the thickness test data with the test thickness smaller than or equal to the initial thickness, the calculated average value is used as the thickness test result, and the thickness test result is sent to the display module 101. The logic determination of the industrial personal computer 102 according to the thickness test data is a determination about an abnormal point, and the operation according to the thickness test data is an operation about an average value of valid data. As an example, when the initial thickness of the wafer is 500 micrometers and the thickness test data received by the industrial personal computer 102 is 600 micrometers, it is indicated that the test data is determined as the abnormal point NA because the test data includes the thickness of the liquid layer because the liquid on the surface of the wafer is not completely blown off.
In one possible implementation, the industrial personal computer 102 is further configured to determine whether the thickness test result is within a target test thickness range, and send a shutdown signal to the grinding apparatus if the thickness test result is within the target test thickness range, where the target test thickness range is obtained by adding the target thickness and a preset threshold. As an example, when the target thickness is 500 micrometers and the preset threshold is positive or negative 0.5 micrometers, the target test thickness range is 499.5 micrometers to 500.5 micrometers, and the thickness test result is 500 micrometers, the industrial personal computer 102 sends a stop signal to the polishing device, indicating that the wafer thickness at this time reaches the target thickness.
The electrical control module 103 is configured to control the photographing unit 1041 to photograph according to the test signal, so as to obtain picture data, and send the picture data to the main control computer 102; the gas control unit 1042 and the thickness measuring unit 1043 are controlled to perform a test according to the test instruction to obtain thickness test data, and the thickness test data is sent to the industrial personal computer 102.
In a possible implementation manner, after the electrical control module 103 receives the test signal, the photographing unit 1041 is controlled to photograph according to the test signal, obtain the picture data, and send the picture data to the industrial personal computer 102 through the ethernet.
In one possible implementation manner, after the electrical control module 103 receives a test instruction fed back by the industrial personal computer 102, the electrical control module controls the gas control unit 1042 and the thickness measuring unit 1043 to perform a test according to the test instruction, specifically, the electrical control module can control the gas control unit 1042 to perform gas injection through the test instruction, and simultaneously control the thickness measuring unit 1043 to perform thickness measurement through the test instruction, so that thickness test data can be obtained, and the thickness test data is sent to the industrial personal computer 102. The gas control unit 1042 is controlled to perform gas spraying by the test command, so that the gas blows out the polishing liquid for polishing the surface of the wafer, the surface of the wafer entity is exposed, the state to be tested is performed, and the optical thickness measurement is performed according to the thickness measurement unit 1043 immediately after the gas control unit 1042 blows out the polishing liquid.
The photographing unit 1041 is configured to photograph the wafer in response to the test signal, and obtain picture data. In one possible embodiment, the photographing unit 1041 photographs the wafer in response to the test signal, and may photograph 30 to 40 photographs per second, and can obtain the picture data.
The gas control unit 1042 is used for performing gas injection on the wafer in response to the test instruction. In one possible implementation manner, the gas to be sprayed may be compressed air of 0.2Mpa or high purity nitrogen, the gas spraying head is umbrella-shaped, the spraying flow of the gas may be manually controlled by an air valve, and the polishing liquid for polishing the wafer surface is blown off by the gas, wherein the polishing liquid may be water-soluble polishing liquid, and the solution on the wafer surface may be rapidly removed after the gas spraying.
A thickness measurement unit 1043, configured to perform thickness measurement on the wafer in response to the test instruction. In one possible implementation, the thickness measuring unit 1043 may be a white light confocal thickness measuring probe ThinkFoucs OP1, where the wafer used for thickness measurement is a white light penetrable wafer, may be a sapphire wafer, and the optical thickness of the wafer may be tested by the thickness measuring unit 1043.
The wafer thickness measuring system provided by the embodiment of the application comprises a display module, an industrial personal computer, an electrical control module and a signal acquisition module; the signal acquisition module comprises a photographing unit, a gas control unit and a thickness measuring unit. The display module is used for acquiring the initial thickness of the wafer, the target thickness of the wafer, a preset threshold value and the thickness measuring time frequency, and displaying the thickness test result of the wafer. The industrial personal computer sends a test signal to the electric control module according to the thickness measurement time frequency, sends a test instruction to the electric control module according to a comparison result of the picture data returned by the electric control module and the preset picture data, receives and calculates thickness test data to obtain a thickness test result, and sends the thickness test result to the display module. The electrical control module controls the photographing unit to photograph according to the test signal so as to obtain picture data, sends the picture data to the main control computer, receives and controls the gas control unit and the thickness measuring unit to test according to the test instruction so as to obtain thickness test data, and sends the thickness test data to the industrial personal computer; the photographing unit is used for photographing the wafer in response to the test signal to obtain picture data; a gas control unit for performing gas injection on the wafer in response to the test instruction; and the thickness measuring unit is used for responding to the test instruction to perform thickness test on the wafer. The thickness of the wafer can be directly measured in the double-sided grinding process, the thickness measurement is not required to be indirectly performed through measuring other objects, the reliability of measurement is high, and the measurement accuracy is improved.
Referring to fig. 5, fig. 5 is a flowchart of a wafer thickness measurement method according to an embodiment of the present application, where the method at least includes the following steps:
s501: and acquiring the initial thickness of the wafer, the target thickness of the wafer, a preset threshold value and the thickness measuring time frequency according to the display module, and displaying the thickness test result of the wafer.
S502: the industrial personal computer sends a test signal to the electrical control module according to the thickness measuring time frequency; the industrial personal computer sends a test instruction to the electric control module according to a comparison result of the picture data returned by the electric control module and preset picture data; the industrial personal computer receives and calculates the thickness test data to obtain a thickness test result, and sends the thickness test result to the display module.
S503: the electrical control module controls the photographing unit to photograph according to the test signal so as to obtain picture data, and sends the picture data to the main control computer; the electrical control module receives and controls the gas control unit and the thickness measuring unit to conduct testing according to the testing instruction so as to obtain thickness testing data, and the thickness testing data are sent to the industrial personal computer.
The photographing unit photographs the wafer in response to the test signal to obtain picture data; the gas control unit responds to the test instruction to perform gas injection on the wafer; the thickness measuring unit is used for performing thickness test on the wafer in response to the test instruction.
Optionally, the industrial personal computer sends a test instruction to the electrical control module according to a comparison result of the picture data returned by the electrical control module and the preset picture data, and the method comprises the following steps:
and the industrial personal computer sends a test instruction to the electric control module according to the comparison result of the picture data returned by the electric control module and the preset picture data when the wafer exposes out of the grinding disc.
Optionally, the electrical control module receives and controls the gas control unit and the thickness measuring unit to perform a test according to the test instruction, so as to obtain thickness test data, and sends the thickness test data to the industrial personal computer, including:
the electrical control module receives the test instruction, controls the gas control unit to spray gas through the test instruction, and simultaneously controls the thickness measuring unit to measure thickness through the test instruction so as to obtain thickness test data, and sends the thickness test data to the industrial personal computer.
Optionally, the thickness measurement unit performs thickness measurement on the wafer in response to the test instruction, including:
the thickness measuring unit is used for carrying out optical thickness test on the wafer in response to the test instruction.
Optionally, the industrial personal computer receives and calculates thickness test data to obtain a thickness test result, and sends the thickness test result to the display module, including:
the industrial personal computer receives the thickness test data, calculates the average value of the effective data of the thickness test data to obtain a thickness test result, and sends the thickness test result to the display module, wherein the effective data is the thickness test data with the test thickness smaller than or equal to the initial thickness.
Optionally, the wafer thickness measurement method further comprises:
and the industrial personal computer judges whether the thickness test result is in a target test thickness range, if the thickness test result is in the target test thickness range, a stop signal is sent to the grinding equipment, and the target test thickness range is obtained by adding the target thickness and a preset threshold value.
The wafer thickness measuring method is applied to a wafer thickness measuring system, and the wafer thickness measuring system comprises a display module, an industrial personal computer, an electrical control module and a signal acquisition module; the signal acquisition module comprises a photographing unit, a gas control unit and a thickness measuring unit. And acquiring the initial thickness of the wafer, the target thickness of the wafer, a preset threshold value and the thickness measuring time frequency according to the display module, and displaying the thickness test result of the wafer. The industrial personal computer sends a test signal to the electrical control module according to the thickness measuring time frequency; the industrial personal computer sends a test instruction to the electric control module according to a comparison result of the picture data returned by the electric control module and preset picture data; the industrial personal computer receives and calculates the thickness test data to obtain a thickness test result, and sends the thickness test result to the display module. The electrical control module controls the photographing unit to photograph according to the test signal so as to obtain picture data, and sends the picture data to the main control computer; the electrical control module receives and controls the gas control unit and the thickness measuring unit to carry out testing according to the testing instruction so as to obtain thickness testing data, and the thickness testing data are sent to the industrial personal computer; the photographing unit photographs the wafer in response to the test signal to obtain picture data; the gas control unit responds to the test instruction to perform gas injection on the wafer; the thickness measuring unit is used for performing thickness test on the wafer in response to the test instruction. The thickness of the wafer can be directly measured in the double-sided grinding process, the thickness measurement is not required to be indirectly performed through measuring other objects, the reliability of measurement is high, and the measurement accuracy is improved.
The "first" and "second" in the names of "first", "second" (where present) and the like in the embodiments of the present application are used for name identification only, and do not represent the first and second in sequence.
From the above description of embodiments, it will be apparent to those skilled in the art that all or part of the steps of the above described example methods may be implemented in software plus general hardware platforms. Based on such understanding, the technical solutions of the present application may be embodied in the form of a software product, which may be stored in a storage medium, such as a read-only memory (ROM)/RAM, a magnetic disk, an optical disk, or the like, including several instructions for causing a computer device (which may be a personal computer, a server, or a network communication device such as a router) to perform the methods described in the embodiments or some parts of the embodiments of the present application.
It should be noted that, in the present specification, each embodiment is described in a progressive manner, and identical and similar parts of each embodiment are all referred to each other, and each embodiment is mainly described in a different point from other embodiments. In particular, for the device embodiments, since they are substantially similar to the method embodiments, the description is relatively simple, and reference is made to the description of the method embodiments for relevant points. The apparatus embodiments described above are merely illustrative, wherein elements illustrated as separate elements may or may not be physically separate, and elements illustrated as elements may or may not be physical elements, may be located in one place, or may be distributed over a plurality of network elements. Some or all of the modules may be selected according to actual needs to achieve the purpose of the solution of this embodiment. Those of ordinary skill in the art will understand and implement the present invention without undue burden.
The foregoing is merely one specific embodiment of the present application, but the protection scope of the present application is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present application should be covered in the protection scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.
Claims (10)
1. The wafer thickness measuring system is characterized by comprising a display module, an industrial personal computer, an electrical control module and a signal acquisition module; the signal acquisition module comprises a photographing unit, a gas control unit and a thickness measuring unit;
the display module is used for acquiring the initial thickness of the wafer, the target thickness of the wafer, a preset threshold value and the thickness measuring time frequency, and displaying the thickness test result of the wafer;
the industrial personal computer is used for sending a test signal to the electrical control module according to the thickness measuring time frequency; according to a comparison result of the picture data returned by the electrical control module and preset picture data, a test instruction is sent to the electrical control module; receiving and calculating thickness test data to obtain the thickness test result, and sending the thickness test result to the display module;
the electrical control module is used for controlling the photographing unit to photograph according to the test signal so as to obtain the picture data, and sending the picture data to the main control computer; the gas control unit and the thickness measuring unit are controlled to conduct testing according to the testing instruction, so that thickness testing data are obtained, and the thickness testing data are sent to the industrial personal computer;
the photographing unit is used for photographing the wafer in response to the test signal to obtain the picture data;
the gas control unit is used for responding to the test instruction to perform gas injection on the wafer;
the thickness measuring unit is used for responding to the test instruction to perform thickness test on the wafer.
2. The system of claim 1, wherein the industrial personal computer is specifically configured to send a test instruction to the electrical control module when the wafer exposes the polishing disc according to a comparison result of the picture data returned by the electrical control module and the preset picture data.
3. The system of claim 1, wherein the electrical control module is specifically configured to receive the test command, control the gas control unit to perform gas injection through the test command, and simultaneously control the thickness measurement unit to perform thickness measurement through the test command to obtain thickness test data, and send the thickness test data to the industrial personal computer.
4. The system according to claim 1, wherein the thickness measuring unit is specifically configured to:
and the thickness measuring unit is used for responding to the test instruction to carry out optical thickness test on the wafer.
5. The system of claim 1, wherein the industrial personal computer is configured to receive the thickness test data, and calculate an average value of valid data of the thickness test data to obtain the thickness test result, and send the thickness test result to the display module, where the valid data is thickness test data having a test thickness less than or equal to the initial thickness.
6. The system of any one of claims 1 to 5, wherein the industrial personal computer is further configured to determine whether the thickness test result is within the target test thickness range, and if the thickness test result is within the target test thickness range, send a shutdown signal to the grinding apparatus, where the target test thickness range is obtained by adding the target thickness and the preset threshold.
7. The wafer thickness measuring method is characterized by being applied to a wafer thickness measuring system, wherein the wafer thickness measuring system comprises a display module, an industrial personal computer, an electrical control module and a signal acquisition module; the signal acquisition module comprises a photographing unit, a gas control unit and a thickness measuring unit, and the method comprises the following steps:
acquiring the initial thickness of a wafer, the target thickness of the wafer, a preset threshold value and a thickness measurement time frequency according to the display module, and displaying a thickness test result of the wafer;
the industrial personal computer sends a test signal to the electrical control module according to the thickness measuring time frequency; the industrial personal computer sends a test instruction to the electric control module according to a comparison result of the picture data returned by the electric control module and preset picture data; the industrial personal computer receives and calculates thickness test data to obtain the thickness test result, and sends the thickness test result to the display module;
the electrical control module controls the photographing unit to photograph according to the test signal so as to obtain the picture data, and sends the picture data to the main control computer; the electrical control module receives and controls the gas control unit and the thickness measuring unit to carry out testing according to the testing instruction so as to obtain the thickness testing data, and the thickness testing data is sent to the industrial personal computer; the photographing unit photographs the wafer in response to the test signal to obtain the picture data; the gas control unit responds to the test instruction to perform gas injection on the wafer; and the thickness measuring unit responds to the test instruction to perform thickness test on the wafer.
8. The method of claim 7, wherein the industrial personal computer sends a test instruction to the electrical control module according to a comparison result of the picture data returned by the electrical control module and preset picture data, and the method comprises:
and the industrial personal computer sends a test instruction to the electric control module when the wafer exposes the grinding disc according to the comparison result of the picture data returned by the electric control module and the preset picture data.
9. The method of claim 7, wherein the electrical control module receiving and controlling the gas control unit and the thickness measurement unit to perform a test according to the test instruction to obtain thickness test data, and transmitting the thickness test data to the industrial personal computer, comprises:
the electrical control module receives the test instruction, controls the gas control unit to spray gas through the test instruction, and simultaneously controls the thickness measuring unit to measure thickness through the test instruction so as to obtain thickness test data, and sends the thickness test data to the industrial personal computer.
10. The method of claim 7, wherein the thickness measurement unit performs thickness testing on the wafer in response to the test instruction, comprising:
and the thickness measuring unit responds to the test instruction to carry out optical thickness test on the wafer.
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| CN202310118338.6A CN116230570A (en) | 2023-02-10 | 2023-02-10 | Wafer thickness measuring system and method |
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