CN116208107A - Surface acoustic wave filter and preparation method and application thereof - Google Patents
Surface acoustic wave filter and preparation method and application thereof Download PDFInfo
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- CN116208107A CN116208107A CN202310229711.5A CN202310229711A CN116208107A CN 116208107 A CN116208107 A CN 116208107A CN 202310229711 A CN202310229711 A CN 202310229711A CN 116208107 A CN116208107 A CN 116208107A
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- 238000010897 surface acoustic wave method Methods 0.000 title claims abstract description 56
- 238000002360 preparation method Methods 0.000 title abstract description 21
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 92
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 92
- 239000000463 material Substances 0.000 claims abstract description 31
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 31
- 229910052751 metal Inorganic materials 0.000 claims abstract description 26
- 239000002184 metal Substances 0.000 claims abstract description 26
- 239000006185 dispersion Substances 0.000 claims abstract description 21
- 238000004519 manufacturing process Methods 0.000 claims abstract description 18
- 238000000151 deposition Methods 0.000 claims abstract description 12
- 239000011248 coating agent Substances 0.000 claims abstract description 10
- 238000000576 coating method Methods 0.000 claims abstract description 10
- 238000001035 drying Methods 0.000 claims abstract description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 15
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 13
- 229910052802 copper Inorganic materials 0.000 claims description 13
- 239000010949 copper Substances 0.000 claims description 13
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 claims description 11
- 229940071870 hydroiodic acid Drugs 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 11
- 238000004891 communication Methods 0.000 claims description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 229910052744 lithium Inorganic materials 0.000 claims description 3
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 3
- 239000010453 quartz Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 238000004377 microelectronic Methods 0.000 abstract description 2
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 238000011031 large-scale manufacturing process Methods 0.000 abstract 1
- 239000007788 liquid Substances 0.000 description 11
- 239000002135 nanosheet Substances 0.000 description 10
- 238000007747 plating Methods 0.000 description 9
- 230000000694 effects Effects 0.000 description 6
- 230000000295 complement effect Effects 0.000 description 5
- 238000010894 electron beam technology Methods 0.000 description 5
- 238000001704 evaporation Methods 0.000 description 5
- 238000001755 magnetron sputter deposition Methods 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 238000001259 photo etching Methods 0.000 description 5
- 238000004528 spin coating Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
- H03H9/14538—Formation
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
The invention relates to the field of semiconductor microelectronic production, in particular to a surface acoustic wave filter and a preparation method and application thereof. The preparation method of the surface acoustic wave filter comprises the following steps: (a) transferring the pattern to the piezoelectric material; depositing a metal film on the pattern; (b) Coating graphene aqueous dispersion on the metal film, and drying to form a graphene electrode layer on the metal film; (c) removing the photoresist. The preparation method of the surface acoustic wave filter is simple, easy to operate and suitable for large-scale production, and the prepared surface acoustic wave filter has higher power tolerance and working frequency.
Description
Technical Field
The invention relates to the field of semiconductor microelectronic production, in particular to a surface acoustic wave filter and a preparation method and application thereof.
Background
Along with the gradual rise of the 5G communication technology, the use frequency of the surface acoustic wave device is gradually increased, the line of the interdigital transducer is finer, the repeated stress from the surface acoustic wave is sharply increased along with the frequency increase, and the traditional metal (Al, cu and the like) has low electromigration resistance, so that hillocks or holes are easily formed on the metal film of the electrode, and therefore, the interdigital transducer of the high-frequency device is easy to generate short circuit or short circuit, the transducer is damaged, and the device is invalid. Meanwhile, high power generated by the high-frequency device brings high temperature to the surface of the substrate, and when the high temperature is not rapidly diffused, the tiny metal interdigital transducer can be melted, so that the device is disabled. These problems have all severely affected the performance of high frequency surface acoustic wave devices, and have also put higher demands on the performance and fabrication methods of interdigital transducers of high frequency surface acoustic wave devices. Therefore, how to improve the electrode performance becomes a major problem in the research of high-frequency devices.
In the past, researchers have improved the stability of electrodes by optimizing the structure of metal (e.g., al) films, including grain size and distribution, and grain quality; and improving stability of the metal electrode by preparing an alloy (e.g., al, cu) electrode. The series of methods still does not achieve the effects desired by the researchers. Recently, along with the improvement of graphene preparation technology and the good electrical conductivity and thermal conductivity of graphene itself, graphene materials are gradually beginning to be used by researchers to prepare electrodes of surface acoustic wave devices so as to improve the stability of the surface acoustic wave devices under high-frequency working conditions. Graphene electrodes for preparing such surface acoustic wave devices are generally formed using graphene having a large area. The preparation process comprises the steps of transferring the whole graphene onto a piezoelectric material, transferring patterns on the graphene by using photoresist, and etching the graphene which is not protected by the photoresist. The difficulty with such methods is the difficulty in preparing large area graphene, which limits the large-scale use of such methods.
In view of this, the present invention has been made.
Disclosure of Invention
A first object of the present invention is to provide a method for manufacturing a surface acoustic wave filter, which is simple, easy to operate, suitable for mass production, and excellent in performance.
A second object of the present invention is to provide a surface acoustic wave filter having high power durability and operating frequency.
A third object of the present invention is to provide a communication apparatus including the surface acoustic wave filter.
In order to achieve the above object of the present invention, the following technical solutions are specifically adopted:
a method of manufacturing a surface acoustic wave filter, comprising the steps of:
(a) Transferring the pattern to the piezoelectric material; depositing a metal film on the pattern;
(b) Coating graphene aqueous dispersion on the metal film, and drying to form a graphene electrode layer on the metal film;
(c) The photoresist is removed.
Preferably, the thickness of the metal film is 0.5 to 3nm.
Preferably, the thickness of the graphene electrode layer is 50 nm-3 μm.
Preferably, the metal film includes: copper film and/or titanium film.
Preferably, the piezoelectric material includes: at least one of lithium niobate, lithium , or quartz.
Preferably, the drying temperature is 20-100 ℃.
Preferably, the preparation method of the graphene aqueous dispersion liquid comprises the following steps: and adding hydroiodic acid into the mixed system of the nano-scale graphene oxide and water.
Preferably, the mass ratio of the nanoscale graphene oxide to the hydroiodic acid is 1:1.
The surface acoustic wave filter is mainly prepared by the preparation method of the surface acoustic wave filter.
A communication device comprises the surface acoustic wave filter prepared by the preparation method of the surface acoustic wave filter.
Compared with the prior art, the invention has the beneficial effects that:
(1) According to the preparation method of the surface acoustic wave filter, graphene is deposited on a piezoelectric material to serve as an electrode so as to improve the power tolerance of the surface acoustic wave filter, and the low-density property of the graphene electrode is utilized to improve the working frequency of the surface acoustic wave filter, so that the prepared surface acoustic wave filter has high-frequency high-tolerance power; and the graphene electrode gradually coats and drops the dispersion liquid of the graphene nano-sheets in water on the piezoelectric material, so that the graphene nano-sheets are gradually deposited on the piezoelectric material.
(2) The surface acoustic wave filter provided by the invention has higher power tolerance and working frequency, and the power tolerance can reach 30dBm.
Detailed Description
The technical solution of the present invention will be clearly and completely described in conjunction with the specific embodiments, but it will be understood by those skilled in the art that the examples described below are some, but not all, examples of the present invention, and are intended to be illustrative only and should not be construed as limiting the scope of the present invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention. The specific conditions are not noted in the examples and are carried out according to conventional conditions or conditions recommended by the manufacturer. The reagents or apparatus used were conventional products commercially available without the manufacturer's attention.
A method of manufacturing a surface acoustic wave filter, comprising the steps of:
(a) Transferring the pattern to the piezoelectric material; depositing a metal film on the pattern;
(b) Coating graphene aqueous dispersion on the metal film, and drying to form a graphene electrode layer on the metal film;
(c) The photoresist is removed.
According to the preparation method of the surface acoustic wave filter, graphene is deposited on a piezoelectric material to serve as an electrode so as to improve the power tolerance of the surface acoustic wave filter, the working frequency of the surface acoustic wave filter is improved by utilizing the low-density property of the graphene electrode, and the prepared surface acoustic wave filter has high-frequency high-tolerance power; and the graphene electrode gradually coats and dropwise adds the dispersion liquid of the graphene nano sheets in water on the piezoelectric material, so that the graphene nano sheets are gradually deposited on the piezoelectric material.
The graphene electrode is prepared by stacking nanoscale graphene sheets, is of a multilayer structure, and is adjustable in thickness; the transition metal layer functions to induce graphene deposition.
And a metal film is formed on the pattern by deposition, so that the wettability of the surface of the pattern to the graphene aqueous dispersion liquid can be improved, and the deposition of the graphene nano sheet can be assisted.
Preferably, the thickness of the metal film is 0.5 to 3nm.
In some embodiments, the thickness of the metal film may be, for example, but not limited to, 0.5nm, 0.8nm, 1.0nm, 1.3nm, 1.5nm, 1.8nm, 2.0nm, 2.3nm, 2.5nm, 2.8nm, or 3nm.
Preferably, the thickness of the graphene electrode layer is 50 nm-3 μm.
In some embodiments, the graphene electrode layer may have a thickness of, for example, but not limited to, 50nm, 100nm, 300nm, 500nm, 700nm, 800nm, 900nm, 1 μm, 1.5 μm, 2 μm, 2.5 μm, or 3 μm.
Preferably, the metal film includes: copper film and/or titanium film.
Preferably, the piezoelectric material includes: at least one of lithium niobate, lithium , or quartz.
Preferably, the drying temperature is 20-100 ℃.
In some specific embodiments, the temperature of the drying may be, for example, but not limited to, 20 ℃, 25 ℃, 30 ℃, 35 ℃, 40 ℃, 45 ℃, 50 ℃, 55 ℃, 60 ℃, 65 ℃, 70 ℃, 75 ℃, 80 ℃, 85 ℃, 90 ℃, 95 ℃, or 100 ℃.
Preferably, the preparation method of the graphene aqueous dispersion liquid comprises the following steps: and adding hydroiodic acid into the mixed system of the nano-scale graphene oxide and water.
Preferably, the mass ratio of the nanoscale graphene oxide to the hydroiodic acid is 1:1.
The aim of changing the thickness of the graphene electrode can be achieved by changing the amount of the graphene aqueous dispersion liquid which is dripped on the piezoelectric material.
The surface acoustic wave filter is mainly prepared by the preparation method of the surface acoustic wave filter.
The surface acoustic wave filter has higher power tolerance and working frequency.
A communication device comprises the surface acoustic wave filter prepared by the preparation method of the surface acoustic wave filter.
Embodiments of the present invention will be described in detail below with reference to specific examples and comparative examples.
Example 1
The preparation method of the surface acoustic wave filter provided by the embodiment comprises the following steps:
1. preparing graphene into nano-scale Graphene Oxide (GO) by a low-temperature oxidation method, dispersing the graphene oxide in water, and adding hydroiodic acid to reduce the graphene oxide into graphene to obtain graphene aqueous dispersion;
2. then, carrying out spin coating on the piezoelectric material; exposing the photoresist by using a mask plate with a pattern to realize the photoetching step of the photoresist; and developing the exposed areas of the photoresist using a developer to effect a developing step; the pattern formed by the photoresist which is not etched is the designed pattern complementary pattern, namely, the pattern is transferred to the piezoelectric material;
3. plating a copper film with the thickness of 0.5 nanometer on the prepared graph by an electron beam plating machine or a magnetron sputtering plating machine;
4. then, dropwise adding the graphene aqueous dispersion liquid on the copper film; gradually evaporating water on the patterned piezoelectric material at 20 ℃, and depositing graphene nano sheets on the patterned wafer to form a graphene electrode layer with the thickness of 3 mu m;
5. finally, the photoresist is removed.
Example 2
The preparation method of the surface acoustic wave filter provided by the embodiment comprises the following steps:
1. preparing graphene into nano-scale Graphene Oxide (GO) by a low-temperature oxidation method, dispersing the graphene oxide in water, and adding hydroiodic acid to reduce the graphene oxide into graphene to obtain graphene aqueous dispersion;
2. then, carrying out spin coating on the piezoelectric material; exposing the photoresist by using a mask plate with a pattern to realize the photoetching step of the photoresist; and developing the exposed areas of the photoresist using a developer to effect a developing step; the pattern formed by the photoresist which is not etched is the designed pattern complementary pattern, namely, the pattern is transferred to the piezoelectric material;
3. plating a copper film with the thickness of 3 nanometers on the prepared pattern by an electron beam coating machine or a magnetron sputtering coating machine;
4. then, dropwise adding the graphene aqueous dispersion liquid on the copper film; gradually evaporating water on the patterned piezoelectric material at 100 ℃, and depositing graphene nano sheets on the patterned wafer to form a graphene electrode layer with the thickness of 2 mu m;
5. finally, the photoresist is removed.
Example 3
The preparation method of the surface acoustic wave filter provided by the embodiment comprises the following steps:
1. preparing graphene into nano-scale Graphene Oxide (GO) by a low-temperature oxidation method, dispersing the graphene oxide in water, and adding hydroiodic acid to reduce the graphene oxide into graphene to obtain graphene aqueous dispersion;
2. then, carrying out spin coating on the piezoelectric material; exposing the photoresist by using a mask plate with a pattern to realize the photoetching step of the photoresist; and developing the exposed areas of the photoresist using a developer to effect a developing step; the pattern formed by the photoresist which is not etched is the designed pattern complementary pattern, namely, the pattern is transferred to the piezoelectric material;
3. plating a copper film with the thickness of 2.5 nanometers on the prepared pattern by an electron beam coating machine or a magnetron sputtering coating machine;
4. then, dropwise adding the graphene aqueous dispersion liquid on the copper film; gradually evaporating water on the patterned piezoelectric material at 70 ℃, and depositing graphene nano sheets on the patterned wafer to form a graphene electrode layer with the thickness of 800nm;
5. finally, the photoresist is removed.
Example 4
The preparation method of the surface acoustic wave filter provided by the embodiment comprises the following steps:
1. preparing graphene into nano-scale Graphene Oxide (GO) by a low-temperature oxidation method, dispersing the graphene oxide in water, and adding hydroiodic acid to reduce the graphene oxide into graphene to obtain graphene aqueous dispersion;
2. then, carrying out spin coating on the piezoelectric material; exposing the photoresist by using a mask plate with a pattern to realize the photoetching step of the photoresist; and developing the exposed areas of the photoresist using a developer to effect a developing step; the pattern formed by the photoresist which is not etched is the designed pattern complementary pattern, namely, the pattern is transferred to the piezoelectric material;
3. plating a copper film with the thickness of 2 nanometers on the prepared pattern by an electron beam coating machine or a magnetron sputtering coating machine;
4. then, dropwise adding the graphene aqueous dispersion liquid on the copper film; gradually evaporating water on the patterned piezoelectric material at 50 ℃, and depositing graphene nano sheets on the patterned wafer to form a graphene electrode layer with the thickness of 500nm;
5. finally, the photoresist is removed.
Example 5
The preparation method of the surface acoustic wave filter provided by the embodiment comprises the following steps:
1. preparing graphene into nano-scale Graphene Oxide (GO) by a low-temperature oxidation method, dispersing the graphene oxide in water, and adding hydroiodic acid to reduce the graphene oxide into graphene to obtain graphene aqueous dispersion;
2. then, carrying out spin coating on the piezoelectric material; exposing the photoresist by using a mask plate with a pattern to realize the photoetching step of the photoresist; and developing the exposed areas of the photoresist using a developer to effect a developing step; the pattern formed by the photoresist which is not etched is the designed pattern complementary pattern, namely, the pattern is transferred to the piezoelectric material;
3. plating a copper film with the thickness of 0.8 nanometer on the prepared graph by an electron beam plating machine or a magnetron sputtering plating machine;
4. then, dropwise adding the graphene aqueous dispersion liquid on the copper film; gradually evaporating water on the patterned piezoelectric material at 45 ℃, and depositing graphene nano sheets on the patterned wafer to form a graphene electrode layer with the thickness of 50nm;
5. finally, the photoresist is removed.
Example 6
The present embodiment differs from embodiment 1 only in that the metal film is a titanium film.
The power tolerance of the surface acoustic wave filter prepared by the invention is detected, the detection method comprises the steps of welding a device on a PCB, setting a frequency point of a signal generator, a frequency point of a spectrum analyzer, and testing the line loss from the signal generator to the spectrum analyzer; and starting a power supply to load power, and monitoring the highest point indication number of the spectrometer in real time. And after the device is stable for 2min, starting timing, and if the indication change of the spectrometer within 10min does not exceed a specified value, increasing the input power of the device by 1dBm, and repeating the previous steps. If the spectrometer change exceeds the specified value, judging that the device is invalid. The power of the previous step when the device fails is the maximum power that the device can bear. The test is carried out at 25-85 ℃. Through tests, the surface acoustic wave filter provided by the invention has the power tolerance of 30dBm.
While the invention has been illustrated and described with reference to specific embodiments, it is to be understood that the above embodiments are merely illustrative of the technical aspects of the invention and not restrictive thereof; those of ordinary skill in the art will appreciate that: modifications may be made to the technical solutions described in the foregoing embodiments, or equivalents may be substituted for some or all of the technical features thereof, without departing from the spirit and scope of the present invention; such modifications and substitutions do not depart from the spirit of the corresponding technical solutions; it is therefore intended to cover in the appended claims all such alternatives and modifications as fall within the scope of the invention.
Claims (10)
1. A method of manufacturing a surface acoustic wave filter, comprising the steps of:
(a) Transferring the pattern to the piezoelectric material; depositing a metal film on the pattern;
(b) Coating graphene aqueous dispersion on the metal film, and drying to form a graphene electrode layer on the metal film;
(c) The photoresist is removed.
2. The method of manufacturing a surface acoustic wave filter according to claim 1, wherein the thickness of the metal film is 0.5 to 3nm.
3. The method of manufacturing a surface acoustic wave filter according to claim 1, wherein the graphene electrode layer has a thickness of 50nm to 3 μm.
4. The method for manufacturing a surface acoustic wave filter according to claim 1, wherein the metal film comprises: copper film and/or titanium film.
5. The method of manufacturing a surface acoustic wave filter according to claim 1, wherein the piezoelectric material comprises: at least one of lithium niobate, lithium , or quartz.
6. The method of manufacturing a surface acoustic wave filter according to claim 1, wherein the drying temperature is 20 to 100 ℃.
7. The method for producing a surface acoustic wave filter according to claim 1, wherein the method for producing the graphene aqueous dispersion comprises: and adding hydroiodic acid into the mixed system of the nano-scale graphene oxide and water.
8. The method for producing a surface acoustic wave filter according to claim 7, wherein a mass ratio of the nano-scale graphene oxide to the hydroiodic acid is 1:1.
9. The surface acoustic wave filter produced by the method for producing a surface acoustic wave filter according to any one of claims 1 to 8.
10. A communication device comprising the surface acoustic wave filter produced by the method for producing a surface acoustic wave filter according to any one of claims 1 to 8.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101693534A (en) * | 2009-10-09 | 2010-04-14 | 天津大学 | Preparation method of single-layer graphene |
| KR20170075126A (en) * | 2015-12-22 | 2017-07-03 | 주식회사 포스코 | Method for separating graphene oxide and method for manufacturing graphene coated steel sheet |
| CN114094982A (en) * | 2021-11-25 | 2022-02-25 | 中国人民解放军国防科技大学 | Graphene surface acoustic wave filter device and preparation method thereof |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101693534A (en) * | 2009-10-09 | 2010-04-14 | 天津大学 | Preparation method of single-layer graphene |
| KR20170075126A (en) * | 2015-12-22 | 2017-07-03 | 주식회사 포스코 | Method for separating graphene oxide and method for manufacturing graphene coated steel sheet |
| CN114094982A (en) * | 2021-11-25 | 2022-02-25 | 中国人民解放军国防科技大学 | Graphene surface acoustic wave filter device and preparation method thereof |
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