CN116192079A - High-frequency surface acoustic wave resonator and preparation method thereof - Google Patents

High-frequency surface acoustic wave resonator and preparation method thereof Download PDF

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Publication number
CN116192079A
CN116192079A CN202310202777.5A CN202310202777A CN116192079A CN 116192079 A CN116192079 A CN 116192079A CN 202310202777 A CN202310202777 A CN 202310202777A CN 116192079 A CN116192079 A CN 116192079A
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Prior art keywords
substrate
acoustic wave
surface acoustic
wave resonator
frequency surface
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江文兵
林志荣
刘晓宇
彭炜
王镇
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Shanghai Institute of Microsystem and Information Technology of CAS
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Shanghai Institute of Microsystem and Information Technology of CAS
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
    • H03H3/10—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves for obtaining desired frequency or temperature coefficient
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
    • H03H9/14538—Formation
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/25—Constructional features of resonators using surface acoustic waves
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D30/00—Reducing energy consumption in communication networks
    • Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Abstract

Compared with the traditional stripping scheme, the metal electrode has the advantages of stable and easily controlled process flow, less steps, high repeatability, high yield and the like, and the metal electrode is superconductive at low temperature, so that the metal electrode is compatible with a superconductive integrated circuit process, and has good application prospect in research or industrial manufacturing aspects such as integrated coupling of a surface acoustic wave device and a superconductive quantum device, high-performance high-frequency surface acoustic wave resonator and a filter and the like.

Description

High-frequency surface acoustic wave resonator and preparation method thereof
Technical Field
The invention belongs to the technical field of semiconductors, and relates to a high-frequency surface acoustic wave resonator and a preparation method thereof.
Background
Surface Acoustic Wave (SAW) resonators are widely used for research and industrial applications in the fields of classical and quantum information processing, communication, and sensing, due to their superior electroacoustic conversion performance, miniaturized size, and low cost. The RF filter formed by taking the SAW resonator as a core element is an important component of the RF front-end system in the wireless communication module, and is a key factor for determining the wireless communication performance of the terminal. With the explosive growth of modern mobile communication speeds and data capacities, the need for higher frequency, larger bandwidth high performance SAW resonators is becoming increasingly stringent.
In the field of quantum information, quantum state coupling conversion based on mechanical cavity phonons has been considered as one of the viable technologies for realizing remote transmission of superconducting qubit information and quantum networks in recent years. The working frequency of the superconducting qubit is generally in the range of 4-8 GHz, so that in order to realize quantum state exchange of phonons and the superconducting qubit in the SAW resonator, the working frequency of the SAW resonator also has to be matched with the frequency of the superconducting qubit. In addition, higher frequency SAW resonators can also be effective in enhancing the sensitivity of SAW sensors.
Operating frequency f of SAW resonator 0 ＝v/λ IDT Operating frequency f of SAW resonator 0 Mainly by the material sound velocity v and the interdigital transducer (IDT) wavelength lambda IDT And (5) determining. As can be seen from the formula, there are mainly two methods for increasing the operating frequency of SAW resonator, namely, increasing the material sound velocity v and shortening the IDT wavelength lambda IDT In which the acoustic velocity v of the material is increased by a "slow-on-fast" multilayer film substrate structure, e.g. AlN/diamond, liNbO 3 /SiO 2 and/Si, the sound velocity v of the SAW is raised by the substrate material with high sound velocity.
Shortening IDT wavelength lambda IDT It is realized by a process of high-resolution electron beam exposure. In the conventional manufacturing method, the high-frequency SAW resonator is mainly manufactured by the processes of electron beam exposure and metal film peeling, however, when the wavelength is further reduced below 200nm, the peeling process scheme can generate the problem that the cross-sectional shape of the electron beam undercut is difficult to control stablyThe IDT electrode is connected to generate short circuit and other intrinsic defects. In order to solve the problems of poor repeatability, low success rate and difficulty in preparing limit linewidth lines in the stripping process scheme, researchers sequentially propose a dry stripping process and a nanoimprint lithography stripping process based on ion beam etching, but although the two improved process schemes can realize the preparation of nano-scale IDT, the minimum linewidth reaches 35nm, the defects are obvious, the problems are that the electron beam glue is required to be etched and stripped with high precision, the residual glue is difficult to completely remove, the device performance is further influenced, the process flow is complex, the cost is high, and the mass production is not facilitated.
Therefore, it is necessary to provide a high-frequency surface acoustic wave resonator and a method for manufacturing the same.
Disclosure of Invention
In view of the above drawbacks of the prior art, an object of the present invention is to provide a high-frequency surface acoustic wave resonator and a preparation method thereof, which are used for solving the problems that the process flow of preparing the surface acoustic wave resonator in the prior art is complex, and it is difficult to prepare the high-performance high-frequency surface acoustic wave resonator in batches at low cost.
To achieve the above and other related objects, the present invention provides a method for manufacturing a high-frequency surface acoustic wave resonator, comprising the steps of:
providing a substrate, wherein the substrate comprises a substrate, an insulating medium layer and a piezoelectric film which are stacked from bottom to top;
forming a metal layer on the substrate, wherein the metal layer is in contact with the piezoelectric film, and the metal layer is superconductive at a low temperature;
coating a photoresist layer on the metal layer, performing direct-writing photoetching and developing, and patterning the photoresist layer;
and etching the metal layer and removing the photoresist layer by taking the photoresist layer as a mask, and forming a metal electrode on the substrate.
Optionally, the metal layer comprises a Nb metal layer, a NbN metal layer or a NbTiN metal layer.
Optionally, the substrate in the base comprises a Si substrate and a sapphire substrateOne of the bases; the insulating dielectric layer comprises a silicon oxide dielectric layer; the piezoelectric film comprises LiNbO 3 Piezoelectric film or LiTaO 3 A piezoelectric film.
Optionally, the method of forming the metal layer on the substrate includes a magnetron sputtering coating method.
Optionally, the direct write lithography includes electron beam direct write lithography or ArF laser direct write lithography.
Optionally, the substrate is a wafer level substrate, and further comprising the steps of dicing and packaging.
The present invention also provides a high-frequency surface acoustic wave resonator comprising:
the substrate comprises a substrate, an insulating medium layer and a piezoelectric film which are stacked from bottom to top;
and the metal electrode is positioned on the substrate and is contacted with the piezoelectric film, and the metal electrode is superconductive at a low temperature.
Optionally, the metal electrode comprises a Nb metal electrode, a NbN metal electrode or a NbTiN metal electrode.
Optionally, the substrate in the base comprises one of a Si substrate and a sapphire substrate; the insulating dielectric layer comprises a silicon oxide dielectric layer; the piezoelectric film comprises LiNbO 3 Piezoelectric film or LiTaO 3 A piezoelectric film.
Optionally, the high frequency surface acoustic wave resonator comprises a high frequency surface acoustic wave resonator applied for integrated coupling with a superconducting quantum device or filter.
As described above, the high-frequency surface acoustic wave resonator and the preparation method thereof adopt the process combining direct writing photoetching and dry etching to prepare the metal electrode, and compared with the traditional stripping scheme, the metal electrode has the advantages of stable and easy control of process flow, less steps, high repeatability, high yield and the like, and the metal electrode is superconductive at low temperature, so that the metal electrode is compatible with the process of a superconductive integrated circuit, and has good application prospect in research or industrial manufacturing aspects such as integrated coupling of a surface acoustic wave device and a superconductive quantum device, high-performance high-frequency surface acoustic wave resonator and a filter and the like.
Drawings
Fig. 1 is a schematic process flow diagram of a high-frequency surface acoustic wave resonator according to an embodiment.
Fig. 2 shows a schematic structural diagram of a substrate provided in the embodiment.
Fig. 3 is a schematic structural diagram of the embodiment after forming a metal layer.
FIG. 4 is a schematic diagram of the structure after coating the photoresist layer in the embodiment.
FIG. 5 is a schematic diagram of a structure after patterning a photoresist layer according to an embodiment.
Fig. 6 is a schematic diagram of a structure after etching a metal layer in an embodiment.
FIG. 7 is a schematic diagram of the structure after removing the photoresist layer according to the embodiment.
FIGS. 8 a-8 d show examples of different wavelength Y128 tangential LiNbO 3 /SiO 2 SEM partial enlargement of SAW resonator of Si substrate.
FIG. 9 shows Y128 tangential LiNbO in the example 3 /SiO 2 S measured at low temperature for SAW resonator of Si substrate 11 Amplitude experimental results and fitting graphs.
Description of element reference numerals
100. Substrate
101. Substrate and method for manufacturing the same
102. Insulating dielectric layer
103. Piezoelectric film
200. Metal layer
201. Metal electrode
300. Photoresist layer
301. Patterned photoresist layer
Detailed Description
Other advantages and effects of the present invention will become apparent to those skilled in the art from the following disclosure, which describes the embodiments of the present invention with reference to specific examples. The invention may be practiced or carried out in other embodiments that depart from the specific details, and the details of the present description may be modified or varied from the spirit and scope of the present invention.
As described in detail in the embodiments of the present invention, the cross-sectional view of the device structure is not partially enlarged to a general scale for convenience of explanation, and the schematic drawings are only examples, which should not limit the scope of the present invention. In addition, the three-dimensional dimensions of length, width and depth should be included in actual fabrication.
For ease of description, spatially relative terms such as "under", "below", "beneath", "above", "upper" and the like may be used herein to describe one element or feature's relationship to another element or feature as illustrated in the figures. It will be understood that these spatially relative terms are intended to encompass other orientations of the device in use or operation in addition to the orientation depicted in the figures. Furthermore, when a layer is referred to as being "between" two layers, it can be the only layer between the two layers or one or more intervening layers may also be present. As used herein, "between … …" is meant to include both endpoints.
In the context of this application, a structure described as a first feature being "on" a second feature may include embodiments where the first and second features are formed in direct contact, as well as embodiments where additional features are formed between the first and second features, such that the first and second features may not be in direct contact.
It should be noted that, the illustrations provided in the present embodiment merely illustrate the basic concept of the present invention by way of illustration, and only the components related to the present invention are shown in the drawings and are not drawn according to the number, shape and size of the components in actual implementation, and the form, number and proportion of each component in actual implementation may be changed at will, and the layout of the components may be more complex.
As shown in fig. 1, the present embodiment provides a method for manufacturing a high-frequency surface acoustic wave resonator, which includes the following steps:
s1: providing a substrate, wherein the substrate comprises a substrate, an insulating medium layer and a piezoelectric film which are stacked from bottom to top;
s2: forming a metal layer on the substrate, wherein the metal layer is in contact with the piezoelectric film, and the metal layer is superconductive at a low temperature;
s3: coating a photoresist layer on the metal layer, performing direct-writing photoetching and developing, and patterning the photoresist layer;
s4: and etching the metal layer and removing the photoresist layer by taking the photoresist layer as a mask, and forming a metal electrode on the substrate.
The metal electrode is prepared by adopting a process combining direct-writing photoetching and dry etching, has the advantages of stable and easily controlled process flow, few steps, high repeatability, high yield and the like, is superconducting at low temperature, can be compatible with a superconducting integrated circuit process, and has good application prospect in research or industrial manufacturing aspects such as integrated coupling of a surface acoustic wave device and a superconducting quantum device, a high-performance high-frequency surface acoustic wave resonator and a filter.
The following description is further made with reference to fig. 2 to 7, and the preparation of the high-frequency surface acoustic wave resonator may specifically include the following steps:
first, referring to fig. 1 and 2, step S1 is performed to provide a base 100, where the base 100 includes a substrate 101, an insulating dielectric layer 102 and a piezoelectric film 103 stacked from bottom to top.
As an example, the substrate 101 in the base 100 may include one of a Si substrate and a sapphire substrate; the insulating dielectric layer 102 may include a silicon oxide dielectric layer; the piezoelectric film 103 may include LiNbO 3 Piezoelectric film or LiTaO 3 A piezoelectric film.
In this embodiment, the substrate 101 is a Si substrate, the insulating dielectric layer 102 is a silicon oxide dielectric layer, and the piezoelectric film 103 is LiNbO 3 The material of the piezoelectric film is not limited to this, but may be selected according to the need, and may be selected in the following stepsIn the specific embodiments of (a) will be further described.
Next, referring to fig. 1 and 3, step S2 is performed to form a metal layer 200 on the substrate 100, wherein the metal layer 200 is in contact with the piezoelectric film 103, and the metal layer 200 is superconducting at a low temperature. As an example, the method of forming the metal layer 200 on the substrate 100 may include a magnetron sputtering coating method, but is not limited thereto.
Specifically, before forming the metal layer 200, a substrate cleaning step is preferably performed, that is, the substrate 100 is cleaned and dried, so as to facilitate the formation of the metal layer 200.
As an example, the metal layer 200 may include a Nb metal layer, a NbN metal layer, or a NbTiN metal layer.
Specifically, when Nb-based materials are used as the material of the metal layer 200, the metal layer 200 is superconducting at a low temperature, and the low temperature includes 9-17K, such as 9K, 15K, 17K, etc., so that the prepared high-frequency surface acoustic wave resonator is compatible with the superconducting integrated circuit process, and has a good application prospect in research or industrial manufacturing aspects such as integrated coupling of a surface acoustic wave device and a superconducting quantum device, high-performance high-frequency surface acoustic wave resonator, a filter, etc. Wherein the high frequency may comprise above 3 GHz.
Next, referring to fig. 1, 4 and 5, step S3 is performed to coat a photoresist layer 300 on the metal layer 200, perform direct-writing lithography and development, pattern the photoresist layer 300, and referring to fig. 1, 6 and 7, step S4 is performed to etch and remove the patterned photoresist layer 301 from the metal layer 200 by using the patterned photoresist layer 301 as a mask, so as to form a metal electrode 201 on the substrate 100.
Specifically, the method for etching the metal layer 200 may include reactive ion beam etching, and after the etching process, ashing and photoresist removing operations may be performed on the patterned photoresist layer 301 to remove the patterned photoresist layer 301.
As an example, the direct write lithography may include electron beam direct write lithography or ArF laser direct write lithography.
Specifically, a spin coating process may be used to coat the metal layer 200 to form the photoresist layer 300, and then, electron beam direct writing lithography or ArF laser direct writing lithography may be selected to pattern the photoresist layer 300, as shown in fig. 4 and 5, where the direct writing lithography is similar to "plotter", and has a very strong flexibility, and is also called Maskless (maskles) lithography, and the embodiment uses the process combining direct writing lithography and dry etching to prepare the metal electrode 201, so that the process flow is stable and easy to control, and has the advantages of fewer steps, high repeatability, high yield, and the like.
As an example, the substrate 100 may be a wafer level substrate, and may further include the steps of dicing and packaging.
Specifically, the dimensions of the substrate 100 may include 6 inches, 8 inches, 12 inches, etc., and a plurality of the high-frequency saw resonators may be simultaneously fabricated on the same substrate 100, and after dicing, packaging, etc., a plurality of independent high-frequency saw resonators may be fabricated, thereby improving the process efficiency and reducing the cost.
Referring to fig. 7, the present embodiment further provides a high-frequency surface acoustic wave resonator, which may be formed by the above-mentioned preparation process, but is not limited thereto, and in this embodiment, the high-frequency surface acoustic wave resonator is prepared by the above-mentioned process, so that the preparation methods, materials, and the like of the high-frequency surface acoustic wave resonator may be referred to above.
Specifically, the high-frequency surface acoustic wave resonator includes a substrate 100 and a metal electrode 201, where the substrate 100 includes a substrate 101, an insulating dielectric layer 102 and a piezoelectric film 103 stacked from bottom to top; the metal electrode 201 is positioned on the substrate 100 in contact with the piezoelectric film 103, and the metal electrode 201 is superconducting at a low temperature.
As an example, the metal electrode 201 may include an Nb metal electrode, an NbN metal electrode, or an NbTiN metal electrode.
As an example, the substrate 101 in the base 100 may include one of a Si substrate and a sapphire substrate; the insulating dielectric layer 102 may includeA silicon oxide dielectric layer; the piezoelectric film 103 may include LiNbO 3 Piezoelectric film or LiTaO 3 A piezoelectric film.
As an example, the high frequency surface acoustic wave resonator may include a high frequency surface acoustic wave resonator applied to integrated coupling with a superconducting quantum device or a filter.
The preparation, structure and performance of the high-frequency surface acoustic wave resonator are further described below by way of specific examples.
The embodiment mainly adopts the steps of stacking the Si substrate, the silicon oxide dielectric layer and the LiNbO from bottom to top 3 The preparation of the single-port high-frequency surface acoustic wave resonator is completed by the substrate of the piezoelectric film, the magnetron sputtering deposition of the Nb film, the one-step forming electron beam direct writing lithography exposure and the reactive ion beam etching of the Nb film, and the specific steps are as follows:
(1) And (3) cleaning a substrate: sequentially ultrasonically cleaning the substrate in acetone and isopropyl alcohol (IPA) solution for 2-10 min, such as 2min, 4min, 5min, 6min, 8min, 10min and the like, and blow-drying by a nitrogen gun;
(2) Coating: placing the cleaned substrate into magnetron sputtering coating equipment, vacuumizing to 1E-5-3E-5 Pa, such as 1E-5Pa, 2E-5Pa, 3E-5Pa and the like, introducing argon to perform direct-current magnetron sputtering, wherein the flow rate of the argon is 5-15 sccm, such as 5sccm, 10sccm and 15sccm, the process air pressure is 0.1-0.8 Pa, such as 0.1Pa, 0.2Pa, 0.5Pa, 0.8Pa and the like, and the sputtering power is 650-750W, such as 650W, 690W, 700W, 750W and the like, so as to sputter and deposit Nb films with certain thickness;
(3) Gluing: spin-coating an electron beam paste such as ZEP520A-7 on the Nb film-coated substrate can be performed at 2500-3500 rpm, such as 2500rpm, 3000rpm and 3500rpm, for 30-90 s, such as 30s, 45s, 60s, 90s, etc. The baking condition can be 150-200deg.C, such as 150deg.C, 180deg.C, 200deg.C, etc., and the baking time can be 2-6 min, such as 2min, 4min, 6min, etc.;
(4) Electron beam exposure: after the colloid is dried, the substrate is put into an electron beam exposure machine, the beam voltage can be 100-150 keV, such as 100keV, 120keV, 150keV, etc., the electron beam current can be 0.8-1.5 nA, such as 0.8nA, 1.0nA, 1.5nA, etc., and the exposure dose can be 200-260 mu C/cm 2 Such as 200. Mu.C/cm 2 、220μC/cm 2 、240μC/cm 2 、260μC/cm 2 Exposing the high-frequency surface acoustic wave resonator and the peripheral waveguide feeder circuit by one-step molding;
(5) Developing: immersing the substrate subjected to electron beam exposure into o-xylene (oxy) solution for uniform shaking, wherein the development time can be 0.5-2 min, such as 0.5min, 1min, 2min and the like, immersing into IPA solution, the fixing time can be 0.5-2 min, such as 0.5min, 1min, 2min and the like, drying by a nitrogen gun, and observing the developed pattern structure under a light microscope;
(6) Reactive ion beam etching: the substrate after finishing developing is immediately put into an RIE etching device, and CF is aerated 4 The gas flow rate may be 20-40 sccm, such as 20sccm, 30sccm, 40sccm, etc., the process gas pressure may be 2-8 Pa, such as 2Pa, 5Pa, 6Pa, 8Pa, etc., the etching power may be 50-80W, such as 50W, 60W, 70W, 80W, etc., and the etching time may be determined according to the thickness of the deposited Nb film and the etching rate. Wherein the etching time is not too long to prevent the overetching damage of LiNbO 3 A substrate surface;
(7) Removing photoresist and ashing: in order to remove the residual electron beam glue after etching, the substrate is put into an oxygen photoresist remover, the oxygen flow rate can be 30-60 sccm, such as 30sccm, 40sccm, 50sccm, 60sccm and the like, the ashing air pressure can be 8-15 Pa, such as 8Pa, 10Pa, 15Pa and the like, the radio frequency power can be 40-60W, such as 40W, 50W, 60W and the like, and the ashing time can be 4-6 min, such as 4min, 5min, 6min and the like;
(8) Removing photoresist: soaking the substrate in heated N-methyl pyrrolidone (NMP) solution at 80-100 deg.c, such as 80 deg.c, 90 deg.c, 100 deg.c, etc. for 1.5-2.5 hr, such as 1.5 hr, 2.0 hr, 2.5 hr, etc., soaking at normal temperature for 6-10 hr, such as 6 hr, 8 hr, 10 hr, etc., and ultrasonic treatment for 5-15 min, such as 5min, 10min, 15min to eliminate photoresist. Then placing the substrate into deionized water to be washed for 10-30 s, such as 10s, 20s, 30s and the like, and ultrasonically washing with IPA solution for 5-15 min, such as 5min, 10min and 15min, so as to finish the preparation of the device;
(9) Scribing: the substrate is protected by photoresist such as AZ703, the wafer is diced into test pieces of 5X 5mm and the like, and the device performance test is carried out by packaging.
Reference is made to FIGS. 8 a-8 d for preparationY128 tangential LiNbO with different wavelengths 3 /SiO 2 SAW resonator scanning electron microscope SEM partial enlargement of/Si, where fig. 8a is wavelength λ=720 nm, fig. 8b is wavelength λ=600 nm, fig. 8c is wavelength λ=480 nm, and fig. 8d is wavelength λ=300 nm.
The graph shows that the etched graph structure is clean and clear, the graph edge collimation is good, the surface of the substrate has no residue, the electrode size is uniform, and the uniformity error can be controlled within 10 nm. The minimum wavelength of the SAW resonator prepared by the etching process can reach 300nm or even shorter.
The packaged single port SAW resonator was placed in a refrigerator for a cool down test, the reflected S parameter of the resonator was measured, and the measurement results were seen in fig. 9.
As can be seen from the figure, the resonant frequency of the thin film SAW resonator is 4.181GHz, which is close to the design value, and the internal quality factor Qi is 21500 by fitting. Due to the influence of the transverse high-order mode and the acoustic wave edge scattering of the SAW device, clutter responses exist on two sides of the main resonance mode, and the stray modes can be eliminated in the future through the methods of apodization weighting of the IDT structure, electrode thickness changing and the like. In addition, the electron beam exposure pattern transfer scheme adopted by the scheme can be replaced by an ArF photoetching process, and is used for mass flow of the 5G communication SAW filter with hundred-nanowire width. The embodiment realizes the method based on 128 DEG Y-X LiNbO 3 /SiO 2 Design and fabrication of 4GHz SAW resonator of Si multilayer piezoelectric film.
In summary, the high-frequency surface acoustic wave resonator and the preparation method thereof adopt the process combining direct writing photoetching and dry etching to prepare the metal electrode, have the advantages of stable and easily controlled process flow, few steps, high repeatability, high yield and the like, and the metal electrode is superconductive at low temperature, so that the metal electrode is compatible with the process of a superconductive integrated circuit, and has good application prospect in research or industrial manufacturing aspects such as integrated coupling of a surface acoustic wave device and a superconductive quantum device, high-performance high-frequency surface acoustic wave resonator and a filter.
The above embodiments are merely illustrative of the principles of the present invention and its effectiveness, and are not intended to limit the invention. Modifications and variations may be made to the above-described embodiments by those skilled in the art without departing from the spirit and scope of the invention. Accordingly, it is intended that all equivalent modifications and variations of the invention be covered by the claims, which are within the ordinary skill of the art, be within the spirit and scope of the present disclosure.

Claims (10)

1. The preparation method of the high-frequency surface acoustic wave resonator is characterized by comprising the following steps of:
providing a substrate, wherein the substrate comprises a substrate, an insulating medium layer and a piezoelectric film which are stacked from bottom to top;
forming a metal layer on the substrate, wherein the metal layer is in contact with the piezoelectric film, and the metal layer is superconductive at a low temperature;
coating a photoresist layer on the metal layer, performing direct-writing photoetching and developing, and patterning the photoresist layer;
and etching the metal layer and removing the photoresist layer by taking the photoresist layer as a mask, and forming a metal electrode on the substrate.
2. The method of manufacturing a high-frequency surface acoustic wave resonator according to claim 1, characterized in that: the metal layer comprises an Nb metal layer, an NbN metal layer or an NbTiN metal layer.
3. The method of manufacturing a high-frequency surface acoustic wave resonator according to claim 1, characterized in that: the substrate in the base comprises one of a Si substrate and a sapphire substrate; the insulating dielectric layer comprises a silicon oxide dielectric layer; the piezoelectric film comprises LiNbO 3 Piezoelectric film or LiTaO 3 A piezoelectric film.
4. The method of manufacturing a high-frequency surface acoustic wave resonator according to claim 1, characterized in that: the method for forming the metal layer on the substrate comprises a magnetron sputtering coating method.
5. The method of manufacturing a high-frequency surface acoustic wave resonator according to claim 1, characterized in that: the direct write lithography includes electron beam direct write lithography or ArF laser direct write lithography.
6. The method of manufacturing a high-frequency surface acoustic wave resonator according to claim 1, characterized in that: the substrate is a wafer level substrate and further includes the steps of dicing and packaging.
7. A high frequency surface acoustic wave resonator, the high frequency surface acoustic wave resonator comprising:
the substrate comprises a substrate, an insulating medium layer and a piezoelectric film which are stacked from bottom to top;
and the metal electrode is positioned on the substrate and is contacted with the piezoelectric film, and the metal electrode is superconductive at a low temperature.
8. The high-frequency surface acoustic wave resonator according to claim 7, characterized in that: the metal electrode comprises an Nb metal electrode, an NbN metal electrode or an NbTiN metal electrode.
9. The high-frequency surface acoustic wave resonator according to claim 7, characterized in that: the substrate in the base comprises one of a Si substrate and a sapphire substrate; the insulating dielectric layer comprises a silicon oxide dielectric layer; the piezoelectric film comprises LiNbO 3 Piezoelectric film or LiTaO 3 A piezoelectric film.
10. The high-frequency surface acoustic wave resonator according to any one of claims 7 to 9, characterized in that: the high-frequency surface acoustic wave resonator comprises a high-frequency surface acoustic wave resonator applied to integrated coupling with a superconducting quantum device or a filter.
CN202310202777.5A 2023-03-03 2023-03-03 High-frequency surface acoustic wave resonator and preparation method thereof Pending CN116192079A (en)

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