CN116190336A - Radio frequency integrated equipment and preparation method thereof - Google Patents

Radio frequency integrated equipment and preparation method thereof Download PDF

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Publication number
CN116190336A
CN116190336A CN202310131707.5A CN202310131707A CN116190336A CN 116190336 A CN116190336 A CN 116190336A CN 202310131707 A CN202310131707 A CN 202310131707A CN 116190336 A CN116190336 A CN 116190336A
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Prior art keywords
radio frequency
substrate
hole
siw
chip
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Chinese (zh)
Inventor
郭涛
吴畅
王凯
吴佳燕
刘安
李程程
刘捷龙
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Hubei Jiufengshan Laboratory
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Hubei Jiufengshan Laboratory
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Priority to CN202310131707.5A priority Critical patent/CN116190336A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/528—Geometry or layout of the interconnection structure
    • H01L23/5283—Cross-sectional geometry
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/20—Frequency-selective devices, e.g. filters
    • H01P1/207—Hollow waveguide filters

Abstract

The invention relates to the field of wireless communication equipment, in particular to radio frequency integrated equipment and a preparation method thereof. The integrated equipment at least comprises a filter which is positioned on a radio frequency chip substrate and is based on a substrate integrated waveguide, the substrate integrated waveguide is prepared by arranging a SIW through hole on the radio frequency chip substrate, a back hole is further arranged on the radio frequency chip substrate, metals are deposited in the SIW through hole and the back hole, and the filter is interconnected with the radio frequency chip through the SIW through hole, the back hole and the metal deposited on the back surface of the substrate. The SIW through holes and the back holes are formed in the substrate at the same time, metal is deposited, the SIW filter is manufactured in the substrate by the SIW through holes, and meanwhile, the filter and the radio frequency chip are interconnected through the SIW through holes and the back holes, so that the parasitic effect is small, the transmission loss is low, and the integration level is high.

Description

Radio frequency integrated equipment and preparation method thereof
Technical Field
The invention relates to the field of equipment in the field of wireless communication, in particular to radio frequency integrated equipment and a preparation method thereof.
Background
The microwave radio frequency transceiver link is mainly divided into three important modules, namely an antenna for receiving and transmitting electromagnetic waves, a radio frequency front-end chip for amplifying signals and a baseband module for modulating signals, wherein the baseband module comprises an amplifier, a low-noise amplifier, a switch and a rear end. The antenna signal is received and then enters the radio frequency front end and is processed by selecting a signal with specific frequency and broadband through a filter, the radio frequency front end chip can be prepared by using a HEMT device of gallium nitride, high output power and low noise coefficient are realized, signal amplification of a transmitting end and low noise amplification of a receiving end are finished, a baseband processing module is mainly a CMOS chip at present, the radio frequency signal is converted into a baseband signal downwards for processing, and the baseband signal is converted into the radio frequency signal upwards.
The HEMT radio frequency chip and the CMOS chip of gallium nitride are difficult to be compatible, are manufactured independently respectively and then are connected through external leads, the passive device filter and the antenna are manufactured independently due to different functions, and then are connected with the radio frequency front end chip through lead connection and packaging means by adding a matching network. These connection modes inevitably bring about parasitic effects, including parasitic inductance and parasitic capacitance, which cause problems of large transmission loss, small bandwidth and low integration level, and the higher the frequency is, the more obvious the parasitic effect is.
The problems with these connection losses are particularly pronounced as 5G and 6G select higher frequency millimeter waves or terahertz. Based on this, in order to realize a high-performance transceiver chip, it becomes particularly important to realize broadband transmission, low loss and high integration of passive device antennas and filters with gallium nitride-based radio frequency chips and silicon-based CMOS chips.
Disclosure of Invention
Based on the above, the invention provides a new radio frequency integrated device, which integrates a filter based on a substrate integrated waveguide in a radio frequency chip substrate, and simultaneously realizes low-loss interconnection of the filter and the radio frequency chip through a SIW through hole and a back hole, so that a series of problems caused by low integration of the radio frequency chip in the prior art can be well relieved.
The invention realizes the technical purposes through the following technical proposal:
the invention provides radio frequency integrated equipment which is characterized by at least comprising a filter based on a substrate integrated waveguide positioned on a radio frequency chip substrate, wherein the substrate integrated waveguide is prepared by arranging a SIW through hole on the radio frequency chip substrate, a back hole is also arranged on the radio frequency chip substrate, metals are deposited in the SIW through hole and the back hole, and the filter is interconnected with the radio frequency chip through the SIW through hole, the back hole and the metal deposited on the back surface of the substrate.
The invention provides a back process of a gallium nitride HEMT substrate, wherein SIW through holes and back holes are etched on the back, then metal is deposited, and finally metal through holes are formed. On one hand, a filter based on a Substrate Integrated Waveguide (SIW) is directly prepared on a gallium nitride substrate by using the SIW through hole, on the other hand, the connection between a radio frequency chip and the filter is realized through the SIW through hole and the back hole, the filter is integrated in the radio frequency chip substrate, and meanwhile, the low-loss interconnection of the filter and the radio frequency chip is finished through the metal through hole.
As a preferred embodiment, the back hole has a width of 20 to 50 μm and a length of 40 to 100. Mu.m.
As a preferred embodiment, two rows of SIW through holes are arranged in parallel, wherein the hole spacing S between each row is 5-10 mu m, and the diameter d is more than S/2.
As a preferred embodiment, the metal seed layer deposited on the SIW through hole and/or the back surface of the substrate is Ti/Au, the thickness of Ti is 20-100 nm, the thickness of Au is 100-500 nm, and the thickness of the plating gold is 5-10 μm.
As a preferred embodiment, the radio frequency chip is a gallium nitride HEMT radio frequency chip.
As a preferred implementation mode, the radio frequency chip at least comprises a substrate and a gallium nitride HEMT device positioned on the substrate, wherein the source-drain ohmic contact of the gallium nitride HEMT device is formed by adopting regrown heavily doped N-type gallium nitride to be in contact with a gallium nitride channel layer in the substrate, and a T-type gate is formed into a GaN HEMT source-drain electrode by using a photoetching lift-off process.
Specifically, the source-drain ohmic contact metal is TiPtAu, and the total thickness is 0.10-0.5 mu m.
As a preferred implementation mode, the front surface of the radio frequency chip is connected with the CMOS chip in a rewiring mode and antenna manufacturing is realized, wherein an antenna integration packaging scheme can be adopted, and the packaging material is selected from FR4 epoxy resin or LCP liquid crystal high polymer.
The front surface adopts a low-loss LCP packaging technology, integrates a patch antenna with a radio frequency chip and a SIW filter, and adopts a rewiring layer to realize interconnection of a CMOS chip and a gallium nitride radio frequency chip; the LCP liquid crystal polymer packaging material has large dielectric constant and small tangent loss angle, and can greatly reduce radio frequency loss. And the packaging layer comprises an antenna stratum, an antenna radiation layer, a feed network layer and a rewiring layer. The mode solves the problems of transmission loss and parasitic effect caused by the traditional connection mode, integrates two different functional chips on the same substrate, improves the integration level, and is beneficial to chip miniaturization.
Specifically, the front side of the radio frequency chip is connected with the CMOS chip through the TSV by the silicon adapter plate.
The invention also provides a preparation method of the radio frequency integrated equipment, which comprises the following steps:
and respectively etching a SIW through hole and a back hole on a substrate of the radio frequency chip, manufacturing a filter based on the substrate integrated waveguide by using the SIW through hole, and performing metal deposition on the SIW through hole, the back hole and the back of the radio frequency chip to interconnect the filter and the radio frequency chip.
As a preferred embodiment, SF is used when the radio frequency chip substrate is a Si-based substrate 6 Dry etching, when the radio frequency chip substrate is a GaN substrate, BCl is used 3 Or Cl 2 +N 2 Etching.
Compared with the prior art, the invention has the beneficial effects that: the transmission loss caused by the traditional connection mode is solved, the parasitic effect is reduced, and simultaneously, two different functional chips are integrated on the same substrate, so that the integration level is improved, and the chip miniaturization is facilitated; a metal through hole is manufactured on a gallium nitride substrate to be used as a substrate integrated waveguide, and the advantages of high quality factor and easiness in integration of a planar microstrip line structure of a traditional rectangular waveguide are considered.
Drawings
Fig. 1 is an epitaxial structure of a gallium nitride HEMT device in embodiment 2;
fig. 2 is a schematic structural diagram of a gallium nitride HEMT device in embodiment 2;
fig. 3 is a power amplifier and low-noise amplifier chip based on a gallium nitride HEMT in example 2;
fig. 4 is a schematic structural diagram of a back hole formed in a radio frequency chip substrate in embodiment 2;
FIG. 5 is a schematic diagram of SIW via hole fabrication in example 2;
fig. 6 is a schematic structural diagram of interconnection between a SIW filter and a radio frequency chip in embodiment 2;
FIG. 7 is a schematic diagram of a rewiring layer in embodiment 2;
fig. 8 is a schematic structural diagram of an integrated rf chip, filter and antenna in embodiment 2;
fig. 9 is a schematic diagram of another structure of the rf chip, filter and antenna integrated unit in embodiment 2. In the figure, 1 is an epitaxial wafer substrate, 2 channel layers, 3 barrier layers and 4 passivation layers.
Detailed Description
The present invention will be described in further detail with reference to specific examples so as to more clearly understand the present invention by those skilled in the art.
The following examples are given for illustration of the invention only and are not intended to limit the scope of the invention. All other embodiments obtained by those skilled in the art without creative efforts are within the protection scope of the present invention based on the specific embodiments of the present invention.
Abbreviations and key terms involved in the present invention are defined as follows:
GaN, gallium nitride
HEMT, high Electron Mobility Transistors, high electron mobility transistor CMOS, complementary Metal Oxide Semiconductor, complementary metal oxide semiconductor SIW: substrate integrated waveguide substrate integrated waveguide
RF IC Radio Frequency Integrated Circuit radio frequency integrated circuit
Power amplifier power amplifier
LNA low-noise amplifier low-noise power amplifier
FR4 epoxy resin composite material
LCP liquid crystal polymer liquid Crystal Polymer
Cap: passivation layer
Example 1
The embodiment of the invention provides radio frequency integrated equipment, which at least comprises a filter based on a substrate integrated waveguide, wherein the filter is positioned on a gallium nitride HEMT radio frequency chip substrate, the substrate integrated waveguide is prepared by arranging a SIW through hole on the radio frequency chip substrate, a back hole is also arranged on the radio frequency chip substrate, metals are deposited in the SIW through hole and the back hole, and the filter is interconnected with the radio frequency chip through the SIW through hole and the back hole and the metal deposited on the back surface of the substrate.
Wherein the width of the back hole is 20-50 μm and the length is 40-100 μm; two rows of SIW through holes are arranged in parallel, wherein the hole spacing S between each row is 5-10 mu m, and the diameter d is more than S/2. The front surface of the radio frequency chip is connected with the CMOS chip in a rewiring mode, and antenna manufacturing is achieved.
The method is characterized in that a substrate of the compound gallium nitride HEMT device is provided with a through hole and a back hole simultaneously, metal is deposited, a SIW filter is manufactured in the substrate by the aid of the SIW through hole, meanwhile, the filter and a radio frequency chip are interconnected through the SIW through hole and the back hole, the front surface of the radio frequency chip is packaged in an antenna sheet, the antenna and the filter are connected through rewiring, and finally integrated integration of the radio frequency chip, the filter and the antenna is achieved.
The radio frequency integrated equipment has the advantages that the SIW through hole is manufactured on the radio frequency chip substrate to serve as the substrate integrated waveguide, the mode can give consideration to the advantages that the high quality factor of the traditional rectangular waveguide and the planar microstrip line structure are easy to integrate, the SIW is utilized to integrate the filter with the high quality factor on the substrate, meanwhile, the filter is connected with the radio frequency chip by the SIW, the parasitic effect is small, the transmission loss is low, and the integration level is high; the front surface of the radio frequency chip integrates the antenna by adopting an on-chip packaging method, and finally, the integrated integration of the radio frequency chip, the filter, the antenna and the CMOS chip is realized.
Example 2
The embodiment of the invention provides a preparation method of radio frequency integrated equipment, which is characterized in that a metal through hole is manufactured in a back hole forming mode in a gallium nitride HEMT process, the metal through hole is manufactured as a substrate integrated waveguide SIW, a filter with high quality factor is manufactured on a gallium nitride substrate by using the SIW, and the filter and a gallium nitride radio frequency chip are connected by using the SIW. The front surface integrates the antenna by adopting an on-chip packaging method, and finally realizes the integrated integration of the radio frequency chip, the filter and the antenna, and the specific method is as follows:
s1, preparing a gallium nitride HEMT radio frequency chip:
(1) Preparing an epitaxial wafer: the epitaxial wafer comprises an epitaxial wafer substrate 1, a channel layer 2, a barrier layer 3 and a passivation layer 4 in sequence, and is specifically shown in fig. 1. The epitaxial wafer substrate 1 is high-resistance silicon, the crystal orientation is a <111> plane, the resistivity is larger than 3000 Ω & cm, the channel layer 2 is gallium nitride, the barrier layer 3 can be AlxGaN (x=0.2-0.7), the InxGaN (x=0.2-0.7), the AlN, scAlN and the passivation layer 4 can be silicon nitride or silicon dioxide or gallium nitride. In addition, the epitaxial wafer substrate can also be selected from gallium arsenide substrate, indium phosphide substrate, silicon germanium substrate and silicon substrate.
(2) Gallium nitride HEMT device: the source-drain ohmic contact adopts regrown heavily doped N-type gallium nitride to contact with a gallium nitride channel, the source-drain ohmic contact metal is TiPtAu, the total thickness is 0.10-0.5 mu m, a T-shaped gate forms a GaN HEMT source-drain electrode by using a photoetching lift-off process, the electron beam evaporation source leaks the metal NiPtAu, the total thickness is 0.4-0.8 mu m, the length of a gate foot is 30-100 nm, and the structure of the GaN HEMT device is shown in figure 2.
(3) Manufacturing a gallium nitride radio frequency chip: after the gallium nitride HEMT device is manufactured, other passive electric devices including passive devices such as a capacitor, a resistor, an inductor and a transmission line are manufactured in the process, and finally the passive electric devices are manufactured into a power amplifier PA and a low noise amplifier LNA radio frequency chip, and particularly, the power amplifier PA and the low noise amplifier LNA radio frequency chip are manufactured according to FIG. 3. The substrate high resistance silicon is reduced to about 100 μm.
S2, manufacturing SIW filter antenna and interconnecting gallium nitride radio frequency chip
The preparation of the gallium nitride radio frequency chip is completed, and the SIW filter and the interconnection of the filter and the gallium nitride radio frequency chip are realized by preparing a metal through hole on a gallium nitride substrate, and the specific method is as follows:
(1) And (3) manufacturing back hole connection of the gallium nitride radio frequency chip: after the gallium nitride radio frequency chip is manufactured, a back hole is etched on the gallium nitride substrate, and metal is deposited for connecting the radio frequency chip and the filter. When back hole etching is performed, metal Ni is used as a mask plate of etching holes, and SF is used for Si-based substrates 6 Dry etching, gaN using BCl 3 Or Cl 2 Or Cl 2 +N 2 Etching, finally using HNO 3 And the etching is used for cleaning after etching and removing the Ni metal mask. Wherein the size width W of the hole for connecting the gallium nitride radio frequency chip is 20-50 μm, and the length L is 40-100 μm. Then sputtering seed layer Ti/Au, wherein the thickness of Ti is 20-100 nm, the thickness of Au is 100-500 nm, and finally electroplating gold, wherein the thickness of gold is 5-10 mu m, see in particular FIG. 4.
(2) SIW metal through hole manufacturing: and synchronously manufacturing through holes for manufacturing SIW when manufacturing the back holes. Wherein the process of etching the holes and the deposited metal are the same as in the previous step. The structure of the SIW holes is shown in fig. 5, wherein the key parameters of the SIW are the diameter d of the through holes and the hole spacing S, wherein the size of S is 5-100 μm, and the hole spacing S is generally less than 2d and the height h is 50-500 μm in order to prevent electromagnetic wave from leaking laterally.
The filter is generally a band-pass filter, the pass band frequency is used for adjusting the resonance frequency by adjusting the diameter of holes, the distance between the holes and the number of the holes, impedance matching and feeding are carried out on two sides of the filter through microstrip lines, and finally the integration of the filter and a gallium nitride radio-frequency chip is realized on a silicon-based gallium nitride substrate.
(3) Metal deposition:
backside metal deposition: first using O 2 Cleaning plasma and hydrochloric acid to remove surface oxide, using metal Ni as a mask plate for etching holes, sputtering a seed layer Ti/Au, wherein the thickness of Ti is 20-100 nm, the thickness of Au is 100-500 nm, and finally electroplating gold, wherein the thickness of gold is 5-10 mu m, as shown in FIG. 6;
front side metal deposition: first using O 2 And cleaning the plasma and hydrochloric acid to remove surface oxides, preparing front metal and ohmic contact metal simultaneously, and evaporating the front metal TiPtAu by using an electron beam, wherein the total thickness is 0.10-0.5 mu m. See fig. 6.
(4) And (3) depositing a flat passivation layer: to protect and planarize the radio frequency chip area, a passivation layer is deposited after front side metal deposition is completed. The passivation material comprises silicon dioxide, silicon nitride, aluminum oxide, zirconium oxide and the like, and the thickness is 1-5 mu m.
S3, manufacturing of front antenna
After the radio frequency chip of gallium nitride and the SIW filter are completed, the antenna is integrated on the front surface of the radio frequency chip of gallium nitride, the whole antenna comprises a rewiring layer, a metal stratum and an antenna layer, and finally the radio frequency chip, the SIW filter, the antenna and the CMOS chip are integrated, wherein the method comprises the following specific steps:
(1) The rewiring layer is connected with the CMOS chip: and an antenna integrated packaging scheme is adopted, and the packaging material is FR4 epoxy resin or LCP liquid crystal high polymer. The redistribution layer adopts metal copper wiring, and the function of the redistribution layer is to connect the radio frequency chip and the CMOS chip for baseband signal processing, and the schematic diagram of the redistribution layer is shown in FIG. 7.
(2) Antenna fabrication and connection to CMOS chip: after the rewiring layer is completed, an antenna layer and an antenna are manufactured finally, and the radio frequency chip and the CMOS chip are connected by adopting the following two schemes respectively:
scheme one: the manufacture of the antenna and the connection of the radio frequency chip and the CMOS chip are realized by adopting a rewiring method, wherein the dielectric material is silicon dioxide or silicon nitride. The antenna layer comprises two layers, namely a metal stratum and an antenna layer, wherein the metal stratum is used as an antenna signal reference layer and is also used as an electromagnetic signal isolation layer for isolating signal interference below. After the feed point reaches the antenna layer, the microstrip line is turned, the two most important structural parameters of the patch antenna are the length Lant and the width Want of the patch, the working frequency of the antenna is adjusted by adjusting the length and the width, and finally, the gallium nitride radio frequency chip, the SIW filter, the antenna and the CMOS chip are integrated, see fig. 8.
Scheme II: and 3D Through Silicon Vias (TSVs) are etched on the silicon adapter plate, on one hand, the antenna and the radio frequency chip are directly connected through the TSVs, on the other hand, the gallium nitride radio frequency chip is connected with the CMOS chip through the TSVs, the CMOS chip is connected through solder balls in a flip-chip mode, and finally integrated integration of the radio frequency chip, the antenna and the CMOS chip is achieved, and the integrated integration is shown in fig. 9.
It should be noted that the above examples are only for further illustrating and describing the technical solution of the present invention, and are not intended to limit the technical solution of the present invention, and the method of the present invention is only a preferred embodiment and is not intended to limit the scope of the present invention. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims (10)

1. The radio frequency integrated equipment is characterized by at least comprising a filter which is positioned on a radio frequency chip substrate and is based on a substrate integrated waveguide, wherein the substrate integrated waveguide is prepared by arranging a SIW through hole on the radio frequency chip substrate, a back hole is further arranged on the radio frequency chip substrate, metals are deposited in the SIW through hole and the back hole, and the filter is interconnected with the radio frequency chip through the SIW through hole, the back hole and the metal deposited on the back surface of the substrate.
2. The radio frequency integrated apparatus according to claim 1, wherein the back hole has a width of 20 to 50 μm and a length of 40 to 100 μm; and/or SIW through holes are arranged in two rows in parallel, wherein the hole spacing S between each row is 5-10 mu m, and the diameter d is more than S/2.
3. The radio frequency integrated device according to claim 1, wherein the metal seed layer deposited on the SIW via and/or the back side of the substrate is Ti/Au, the thickness of Ti is 20-100 nm, the thickness of Au is 100-500 nm, and the thickness of the plated gold is 5-10 μm.
4. The apparatus of any one of claims 1-3, wherein the rf chip is a gallium nitride HEMT rf chip.
5. The device of claim 1, wherein the rf chip comprises at least a substrate and a gallium nitride HEMT device thereon, wherein the source-drain ohmic contacts of the gallium nitride HEMT device are formed by using a photolithography lift-off process by using regrown heavily doped N-type gallium nitride to contact with a gallium nitride channel layer in the substrate.
6. The device of claim 5, wherein the source drain ohmic contact metal is TiPtAu and has a total thickness of 0.10-0.5 μm.
7. The radio frequency integrated device of claim 1, wherein the front side of the radio frequency chip is connected to the CMOS chip by rewiring and antenna fabrication is performed.
8. The apparatus of claim 7, wherein the front side of the rf chip is connected to the CMOS chip by TSVs through a silicon interposer.
9. The method for manufacturing a radio frequency integrated device according to any one of claims 1 to 8, comprising the steps of:
and respectively etching a SIW through hole and a back hole on a substrate of the radio frequency chip, manufacturing a filter based on the substrate integrated waveguide by using the SIW through hole, and performing metal deposition on the SIW through hole, the back hole and the back of the radio frequency chip to interconnect the filter and the radio frequency chip.
10. The method for manufacturing a radio frequency chip integrated apparatus according to claim 9, wherein SF is used when the radio frequency chip substrate is a Si-based substrate 6 Dry etching, when the radio frequency chip substrate is a GaN substrate, BCl is used 3 Or Cl 2 +N 2 Etching.
CN202310131707.5A 2023-02-15 2023-02-15 Radio frequency integrated equipment and preparation method thereof Pending CN116190336A (en)

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Application Number Priority Date Filing Date Title
CN202310131707.5A CN116190336A (en) 2023-02-15 2023-02-15 Radio frequency integrated equipment and preparation method thereof

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CN116190336A true CN116190336A (en) 2023-05-30

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