CN116180051A - 一种用于批次式成膜的原子层沉积装置 - Google Patents
一种用于批次式成膜的原子层沉积装置 Download PDFInfo
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Abstract
本发明提供了一种用于批次式成膜的原子层沉积装置，涉及等离子体发生装置技术领域，包括真空腔室、反应腔室以及工艺腔室，工艺腔室置于真空腔室内；反应腔室内置有线圈，该反应腔室的侧壁上设有多个进气口，且各进气口通过气体分流器控制进气比例；反应腔室相对所述侧壁的另一端为敞口，该敞口置于真空腔室内，并与工艺腔室连通；工艺腔室设有与反应腔室连接的进气端以及与真空泵连通的排气端，以使反应腔室内的等离子体源流向工艺腔室；工艺腔室内置有支架，所述支架上设有若干个用以放置待加工基片的放置层，各放置层的布设方向与等离子体源的流动方向平行，以确保各层基片与等离子体源均匀接触，从而提高各基片间的均一性以及工艺稳定性。
Description
技术领域
本发明涉及等离子体发生装置技术领域，具体而言，涉及一种用于批次式成膜的原子层沉积装置。
背景技术
等离子体增强原子层沉积(plasma enhanced atomic layer deposition)简称PEALD,等离子增强原子层沉积(PEALD)技术除具有传统热原子层沉积的成膜均匀性好、保型性高等诸多优点之外，还具有沉积温度更低，成膜种类更广泛，工艺控制灵活等优点。PEALD技术广泛应用于半导体集成电路中晶体管栅极介电层(high-k)和金属栅电极、集成电路互连线扩散阻挡层、OLED平板显示器、光电子材料和器件、DRAM介电层、器件表面处理等，PEALD已成为先进微纳米薄膜制备过程中不可或缺的一种重要技术。但是，当前的等离子增强原子层沉积技术还存在着沉积过程中气场分布不够均匀，导致沉积在晶圆上的原子层厚度不一；且现有技术中通常采用远程等离子体源，等离子体中活性自由基浓度的稳定性及自由基分布不易控制，导致各基片间沉积效果存在差异，影响片间的均一性及工艺的稳定性。
发明内容
本发明公开了一种批次式成膜的原子层沉积装置，旨在改善现有沉积装置中各基片间的均一性以及工艺稳定性不佳的问题。
本发明采用了如下方案：
一种用于批次式成膜的原子层沉积装置，包括真空腔室、反应腔室以及工艺腔室，其中，所述工艺腔室置于所述真空腔室内；所述反应腔室内置有线圈，所述反应腔室的侧壁上设有多个进气口，且各所述进气口通过气体分流器控制进气比例；所述反应腔室相对所述侧壁的另一端为敞口，该敞口置于所述真空腔室内，并与所述工艺腔室连通；所述工艺腔室设有与所述反应腔室连接的进气端以及用以与真空泵连通的排气端，使得所述反应腔室内的等离子体源流向所述工艺腔室内；所述工艺腔室内置有支架，所述支架上设有若干个用以放置待加工基片的放置层，各所述放置层的布设方向与所述等离子体源的流动方向平行，以使各层基片与等离子体源均匀接触。
作为进一步改进，所述反应腔室设有两个敞口，对应与两个所述工艺腔室连接，且两所述工艺腔室沿所述反应腔室的中心对称配置。
作为进一步改进，所述敞口的高度大于各所述放置层的总高度。
作为进一步改进，所述反应腔室内置有线圈，所述线圈外周套设有陶瓷保护罩，沿所述反应腔室的侧壁开设有多个所述进气口，电源置于所述反应腔室外侧，通过导线与所述线圈连接。
作为进一步改进，所述反应腔室在所述敞口处设有等离子体匀流板，所述工艺腔室内与所述等离子体匀流板对应设有前驱体源匀流板。
作为进一步改进，所述工艺腔室的进气端与排气端相对称配置。
作为进一步改进，所述工艺腔室的横截面呈圆形，所述支架与所述工艺腔室相仿形设置。
通过采用上述技术方案，本发明可以取得以下技术效果：
本申请的用于批次式成膜的原子层沉积装置，将反应腔室与工艺腔室连通，以使反应腔室内的等离子体源内置，采用气体分流器调节进气口的进气比例，以控制等离子体在反应腔室内的分布。此外，在工艺腔室内设置与等离子体源的流动方向相平行的放置层，以使置于各放置层上的基片均能与等离子体源均匀接触，等离子体源沿流动方向均匀扫过各基片，从而保障各基片间的均一性以及工艺稳定性，以满足批量生产的要求。
附图说明
为了更清楚地说明本发明实施方式的技术方案，下面将对实施方式中所需要使用的附图作简单地介绍，应当理解，以下附图仅示出了本发明的某些实施例，因此不应被看作是对范围的限定，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他相关的附图。
图1是本发明其中一实施例的结构示意图；
图2是图1在另一视角下的结构示意图；
图3是图1中进气口的结构示意图；
图4是本发明另一实施例的结构示意图；
图5是沿图4其中一截面的剖视图。
图标：
1-进气口；2-线圈；3-陶瓷保护罩；4-电源；5-反应腔室；6-等离子体匀流板；7-工艺腔室；8-1-第一温度组件；8-2-第二温度组件；8-3-第三温度组件；9-真空腔室；10-前驱体源匀流板；11-支架；12-基片；13-抽气口匀气板；14-抽气口；15-转动座；16-气体分流器；17-流量计；18-真空泵。
具体实施方式
为使本发明实施方式的目的、技术方案和优点更加清楚，下面将结合本发明实施方式中的附图，对本发明实施方式中的技术方案进行清楚、完整地描述，显然，所描述的实施方式是本发明一部分实施方式，而不是全部的实施方式。基于本发明中的实施方式，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施方式，都属于本发明保护的范围。因此，以下对在附图中提供的本发明的实施方式的详细描述并非旨在限制要求保护的本发明的范围，而是仅仅表示本发明的选定实施方式。基于本发明中的实施方式，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施方式，都属于本发明保护的范围。
实施例
结合图1和图3，本实施例提供了一种用于批次式成膜的原子层沉积装置，包括真空腔室9、反应腔室5以及工艺腔室7。其中，工艺腔室7置于所述真空腔室9内，反应腔室5内置有线圈2，反应腔室5的侧壁上设有多个进气口1，且各进气口1通过气体分流器16控制进气比例，气体分流器16的进气管与流量计17连接，用以监测进入反应腔室5内的气体量；反应腔室5相对所述侧壁的另一端为敞口，该敞口置于真空腔室9内，并与工艺腔室7连通；工艺腔室7设有与反应腔室5连接的进气端以及与真空泵18连通的排气端，使得反应腔室5内的等离子体源流向工艺腔室7内；工艺腔室7内置有支架11，所述支架11上设有若干个放置层，各所述放置层之间相互平行，待加工基片12一一置于所述放置层上；且各所述放置层的布设方向与等离子体源的流动方向平行，从而确保各层基片12与等离子体源均匀接触。
需要说明的是，在本实施例中，将反应腔室5与工艺腔室7连通，以使反应腔室5内的等离子体源内置，采用气体分流器16调节进气口1的进气比例，以控制等离子体在反应腔室5内的分布。此外，在工艺腔室7内设置与等离子体源的流动方向相平行的放置层，以使置于各放置层上的基片12均能与等离子体源均匀接触，等离子体源沿流动方向均匀扫过各基片12，从而保障各基片12间的均一性以及工艺稳定性，以满足批量生产的要求。
优选地，结合图4和图5，反应腔室5设有两个敞口，对应与两个工艺腔室7连接，且两工艺腔室7沿反应腔室5的中心对称配置，以增加装置的生产效率。工艺腔室7的进气端与排气端相对称配置，排气端还设有抽气口匀气板13，抽气口14与真空泵18连接，以使等离子体源的流动方向稳定。反应腔室5的外周设有第一温度组件8-1，工艺腔室7的外周设有第二温度组件8-2，工艺腔室7的排气端设有第三温度组件8-3。通过各温度组件以保障沉积过程的温度环境，确保加工效果。
在上述实施例的基础上，本发明一可选的实施例中，反应腔室5内置有线圈2，线圈2外周套设有陶瓷保护罩3，沿反应腔室5的侧壁开设有三个进气口1，各进气口1沿所述侧壁的竖向阵列设置。电源4置于反应腔室5外侧，通过导线与线圈2连接。需要提到的是，在反应腔室5内设置线圈2，可获得更高的气体解离度和自由基浓度。在其中一种实施方式中，线圈2环绕进气口1呈跑道型设置，该跑道型将所有进气口1围合在内。反应腔室5的内壁与线圈2相仿形布设，以使线圈2与反应腔室5内壁在径向方向上距离相等，即反应空间相同，便于形成分布均匀的等离子体。其中，关于电源4施加于线圈2的交流频率、导线与线圈2之间的电路原理，以及反应腔室5内如何产生等离子体的工作原理等为现有技术，在此不再赘述。
较佳地，反应腔室5在所述敞口处设有等离子体匀流板6，进一步整流反应腔室5内的等离子体，使其分布更加均匀，以便于投入后续加工中。工艺腔室7内与等离子体匀流板6对应设有前驱体源匀流板10，用以整流前驱体源，以使前驱体源与基片12均匀接触。
在另一实施例中，工艺腔室7的横截面呈圆形，支架11与工艺腔室7相仿形设置，以提高放置层面积，提升加工效率。且反应腔室5的敞口高度大于各放置层的总高度，进一步保障各放置层能够与等离子体源均匀接触。在其中一种实施方式中，支架11呈框架状，支架11底部设有转动座15，以使支架11可旋转的配置在工艺腔室7内，放置层为沿框架设置的凹槽，基片12的边缘插设在凹槽内，以架置在支架11上，不仅限于此，不作具体限定。
以上仅是本发明的优选实施方式，本发明的保护范围并不仅局限于上述实施例，凡属于本发明思路下的技术方案均属于本发明的保护范围。
Claims (7)
1.一种用于批次式成膜的原子层沉积装置，包括真空腔室、反应腔室以及工艺腔室，其特征在于，
所述工艺腔室置于所述真空腔室内，
所述反应腔室内置有线圈，所述反应腔室的侧壁上设有多个进气口，且各所述进气口通过气体分流器控制进气比例；所述反应腔室相对所述侧壁的另一端为敞口，该敞口置于所述真空腔室内，并与所述工艺腔室连通；
所述工艺腔室设有与所述反应腔室连接的进气端以及与真空泵连通的排气端，使得所述反应腔室内的等离子体源流向所述工艺腔室；所述工艺腔室内置有支架，所述支架上设有若干个用以放置待加工基片的放置层，各所述放置层的布设方向与所述等离子体源的流动方向平行，以使各层基片与等离子体源均匀接触。
2.根据权利要求1所述的用于批次式成膜的原子层沉积装置，其特征在于，所述反应腔室设有两个敞口，对应与两个所述工艺腔室连接，且两所述工艺腔室沿所述反应腔室的中心对称配置。
3.根据权利要求1所述的用于批次式成膜的原子层沉积装置，其特征在于，所述敞口的高度大于各所述放置层的总高度。
4.根据权利要求1所述的用于批次式成膜的原子层沉积装置，其特征在于，所述反应腔室内置有线圈，所述线圈外周套设有陶瓷保护罩，沿所述反应腔室的侧壁开设有多个所述进气口，电源置于所述反应腔室外侧，通过导线与所述线圈连接。
5.根据权利要求1所述的用于批次式成膜的原子层沉积装置，其特征在于，所述反应腔室在所述敞口处设有等离子体匀流板，所述工艺腔室内与所述等离子体匀流板对应设有前驱体源匀流板。
6.根据权利要求1所述的用于批次式成膜的原子层沉积装置，其特征在于，所述工艺腔室的进气端与排气端相对称配置。
7.根据权利要求1所述的用于批次式成膜的原子层沉积装置，其特征在于，所述工艺腔室的横截面呈圆形，所述支架与所述工艺腔室相仿形设置。
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