CN116170725A

CN116170725A - Microphone

Info

Publication number: CN116170725A
Application number: CN202111415470.0A
Authority: CN
Inventors: 周文兵; 黄雨佳; 袁永帅; 邓文俊; 齐心; 廖风云
Original assignee: Shenzhen Voxtech Co Ltd
Current assignee: Shenzhen Voxtech Co Ltd
Priority date: 2021-11-25
Filing date: 2021-11-25
Publication date: 2023-05-26
Also published as: TW202322638A

Abstract

The present specification provides a microphone comprising: an acoustic-to-electric converter for converting an acoustic signal into an electrical signal; an acoustic structure including a sound guide tube and an acoustic cavity in acoustic communication with the acoustic-to-electric converter and in acoustic communication with the exterior of the microphone through the sound guide tube; the acoustic structure has a first resonant frequency, the acoustic-electric converter has a second resonant frequency, and an absolute value of a difference between the first resonant frequency and the second resonant frequency is not more than 1000Hz.

Description

Microphone

Technical Field

The present disclosure relates to the field of acoustic devices, and more particularly to a microphone.

Background

A microphone is a transducer that converts sound signals into electrical signals. External sound signals may enter the interior cavity of the microphone from the aperture in the housing and cause the air within the cavity to vibrate. The acoustic-electric converter of the microphone may receive the air vibration signal and convert the vibration signal into an electrical signal output. The electroacoustic transducer has a resonant frequency and the response of the vibration sensing device to the external vibration signal may be manifested in that its corresponding frequency response curve produces a resonant peak around the resonant frequency. The resonant intensity at which the electroacoustic transducer resonates at its resonant frequency is relatively limited, so that the sensitivity of the microphone is relatively low. It is therefore desirable to provide a microphone that has a relatively high sensitivity at the resonance frequency.

Disclosure of Invention

Some embodiments of the present specification provide a microphone comprising: an acoustic-to-electric converter for converting an acoustic signal into an electrical signal; an acoustic structure comprising an acoustic duct and an acoustic cavity in acoustic communication with the acoustic-to-electrical converter and in acoustic communication with the exterior of the microphone through the acoustic duct; wherein the acoustic structure has a first resonant frequency and the electroacoustic transducer has a second resonant frequency, the absolute value of the difference between the first resonant frequency and the second resonant frequency being no greater than 1000Hz.

In some embodiments, the microphone further comprises a housing, a plate body and an acoustic inlet, the acoustic inlet is arranged on the plate body, the plate body divides the space in the housing into at least two cavities, the at least two cavities comprise a first cavity and an acoustic cavity, the acoustic pipe is arranged on a cavity wall constituting the acoustic cavity, the acoustic-electric converter is arranged in the first cavity, and the acoustic cavity is in acoustic communication with the acoustic-electric converter through the acoustic inlet.

In some embodiments, the acoustic-to-electrical converter is located in an acoustic cavity of the acoustic structure, and the acoustic signal enters the acoustic cavity through the acoustic pipe and is transmitted to the acoustic-to-electrical converter.

In some embodiments, the first resonant frequency is equal to the second resonant frequency.

In some embodiments, the sensitivity of the microphone response at the first resonant frequency is greater than the sensitivity of the acousto-electric transducer response at the first resonant frequency, and/or the sensitivity of the microphone response at the second resonant frequency is greater than the sensitivity of the acousto-electric transducer response at the second resonant frequency.

In some embodiments, the microphone further comprises a second acoustic structure comprising a second sound guide tube and a second acoustic cavity in acoustic communication with the exterior of the microphone through the second sound guide tube; the second acoustic cavity is in acoustic communication with the acoustic cavity through the acoustic pipe; the second acoustic structure has a third resonant frequency, the third resonant frequency is different from the first resonant frequency and/or the second resonant frequency, and the absolute value of the difference value between the third resonant frequency, the first resonant frequency and the second resonant frequency is 100Hz-1000Hz.

In some embodiments, the microphone further comprises a second acoustic structure comprising a second sound guide tube and a second acoustic cavity in acoustic communication with the exterior of the microphone through the second sound guide tube; the second acoustic cavity is in acoustic communication with the acoustic cavity through the acoustic pipe; the second acoustic structure has a third resonant frequency, and values of at least two resonant frequencies among the third resonant frequency, the first resonant frequency and the second resonant frequency are the same.

In some embodiments, the microphone further comprises a first plate, a second plate, and an acoustic inlet, the acoustic inlet being disposed on the first plate, the acoustic pipe being disposed on the second plate, the first plate and the second plate dividing a space within the housing into a first cavity, the acoustic cavity, and a second acoustic cavity; the first plate body and at least a portion of the housing define the first cavity, the acoustic-to-electric converter being disposed in the first cavity; at least a portion of the first and second plates and the housing define the acoustic cavity; the second plate and at least a portion of the housing define the second acoustic cavity, and the second sound guide tube is disposed on a cavity wall constituting the second acoustic cavity.

In some embodiments, further comprising a second acoustic structure and a third acoustic structure, the second acoustic structure comprising a second acoustic pipe and a second acoustic cavity; the third acoustic structure comprises a third sound guide pipe, a fourth sound guide pipe and a third acoustic cavity; the acoustic cavity is in acoustic communication with the third acoustic cavity through the third sound guide tube; the second acoustic cavity is in acoustic communication with the outside of the acoustic microphone through the second sound guide tube and in acoustic communication with the third acoustic cavity through the fourth sound guide tube; the third acoustic cavity is in acoustic communication with the acoustic-to-electric converter.

In some embodiments, the microphone further comprises a first plate, a second plate, a third plate, and an acoustic port, wherein the acoustic port is disposed on the first plate, the third acoustic pipe and the fourth acoustic pipe are disposed on the second plate, and the third plate is physically connectable with the second plate and the housing; the first plate and at least a portion of the housing define a first cavity in which the acoustic-to-electric converter is located; at least a portion of the first plate, the second plate, and the housing define the third acoustic cavity; at least a portion of the second plate, the third plate, and the housing define the acoustic cavity, the sound guide tube being disposed on a cavity wall constituting the acoustic cavity; the second plate, the third plate, and at least a portion of the housing define the second acoustic cavity, and the second sound guide tube is disposed on a cavity wall constituting the second acoustic cavity.

In some embodiments, the second acoustic structure has a third resonant frequency, the third acoustic structure having a fourth resonant frequency; the fourth resonant frequency, the third resonant frequency, the first resonant frequency and the second resonant frequency are different, and the absolute value of the difference value between the fourth resonant frequency, the third resonant frequency, the first resonant frequency and the second resonant frequency is 100Hz-1000Hz.

In some embodiments, the second acoustic structure has a third resonant frequency, the third acoustic structure having a fourth resonant frequency; and at least two of the fourth resonant frequency, the third resonant frequency, the first resonant frequency and the second resonant frequency have the same value.

In some embodiments, the acoustic structure comprises a plurality of acoustic substructures, the acoustic-to-electrical converter comprises a plurality of acoustic-to-electrical converters in one-to-one correspondence with the acoustic substructures, each of the acoustic substructures comprising the sub-acoustic duct and the acoustic subchamber, the acoustic subchamber of each of the acoustic substructures being in acoustic communication with the corresponding acoustic-to-electrical converter and with the exterior of the microphone through the sub-acoustic duct.

In some embodiments, the absolute value of the difference between the resonant frequency of the acoustic substructure and the resonant frequency of its corresponding acoustic-to-electric converter is no greater than 200Hz.

In some embodiments, the resonant frequency of the acoustic substructure is equal to the resonant frequency of its corresponding acoustic-to-electrical converter.

In some embodiments, the sensitivity of the microphone response at the resonant frequency of the acoustic substructure is greater than the sensitivity of the acousto-electric transducer response at the resonant frequency of the acoustic substructure, and/or the sensitivity of the microphone response at the resonant frequency of the acousto-electric transducer is greater than the sensitivity of the acousto-electric transducer response at its resonant frequency.

Drawings

The present specification will be further elucidated by way of example embodiments, which will be described in detail by means of the accompanying drawings. The embodiments are not limiting, in which like numerals represent like structures, wherein:

fig. 1 is a simplified schematic structural diagram of a microphone according to some embodiments of the present description;

FIG. 2 is a simplified mechanical model schematic of an acoustic-to-electrical converter shown in accordance with some embodiments of the present description;

FIG. 3 is a schematic diagram of an exemplary acousto-electric transducer shown in accordance with some embodiments of the present description;

FIG. 4 is a schematic view in section A-A of FIG. 3;

FIG. 5 is a schematic diagram of an exemplary acousto-electric transducer shown in accordance with further embodiments of the present description;

FIG. 6 is a schematic view in section B-B of FIG. 5;

FIG. 7 is a schematic diagram of an exemplary acousto-electric transducer shown in accordance with further embodiments of the present description;

FIG. 8 is a schematic view in section C-C of FIG. 7;

FIG. 9 is a schematic cross-sectional view of an exemplary acousto-electric transducer shown in accordance with some embodiments of the present description;

FIG. 10 is a schematic diagram of an exemplary acousto-electric transducer shown in accordance with further embodiments of the present description;

FIG. 11 is a schematic view in section D-D of FIG. 10;

FIG. 12 is a schematic cross-sectional view of an exemplary acousto-electric transducer shown in accordance with further embodiments of the present specification;

FIG. 13 is a schematic cross-sectional view of an exemplary acousto-electric transducer shown in accordance with further embodiments of the present disclosure;

fig. 14 is a schematic diagram of an exemplary microphone shown in accordance with some embodiments of the present description;

fig. 15 is a schematic diagram of an exemplary microphone shown in accordance with some embodiments of the present description;

fig. 16 is a schematic diagram of a frequency response curve of an exemplary microphone shown in accordance with some embodiments of the present description;

fig. 17 is a schematic diagram of a frequency response curve of an exemplary microphone shown in accordance with some embodiments of the present description;

fig. 18 is a schematic diagram of an exemplary microphone shown in accordance with some embodiments of the present description;

fig. 19 is a schematic diagram of a frequency response curve of an exemplary microphone shown in accordance with some embodiments of the present description;

FIG. 20 is a schematic diagram of an exemplary microphone shown in accordance with some embodiments of the present description;

FIG. 21 is a schematic diagram of an exemplary microphone shown in accordance with some embodiments of the present description;

fig. 22 is a schematic diagram of an exemplary microphone shown in accordance with some embodiments of the present description;

Fig. 23 is a schematic diagram of a frequency response curve of an exemplary microphone shown in accordance with some embodiments of the present description;

fig. 24 is a schematic diagram of a frequency response curve of an exemplary microphone shown in accordance with some embodiments of the present description.

Detailed Description

In order to more clearly illustrate the technical solutions of the embodiments of the present specification, the drawings used in the description of the embodiments will be briefly described below. It is apparent that the drawings in the following description are only some examples or embodiments of the present specification, and it is possible for those of ordinary skill in the art to apply the present specification to other similar situations according to the drawings without inventive effort. It should be understood that these exemplary embodiments are presented merely to enable those skilled in the relevant art to better understand and practice the invention and are not intended to limit the scope of the invention in any way. Unless otherwise apparent from the context of the language or otherwise specified, like reference numerals in the figures refer to like structures or operations.

It will be understood that "system," "apparatus," "unit" and/or "component," "assembly," "element" as used herein is one method for distinguishing between different components, elements, parts, portions, or assemblies of different levels. However, if other words can achieve the same purpose, the words can be replaced by other expressions.

Various terms are used to describe spatial and functional relationships between elements (e.g., between components), including "connected," joined, "" interface, "and" coupled. Unless explicitly described as "direct," when a relationship between a first and second element is described in this specification, the relationship includes a direct relationship where no other intermediate element exists between the first and second element, as well as an indirect relationship where one or more intermediate elements exist (spatially or functionally) between the first and second elements. In contrast, when an element is referred to as being "directly" connected, coupled, interfaced, or coupled to another element, there are no intervening elements present. In addition, the spatial and functional relationships between the elements may be implemented in various ways. For example, the mechanical connection between the two elements may include a welded connection, a keyed connection, a pinned connection, an interference fit connection, or the like, or any combination thereof. Other words used to describe the relationship between elements should be interpreted in a similar fashion (e.g., "between," and..the term "between," "adjacent," and "directly adjacent," etc.).

It will be understood that the terms "first," "second," "third," etc. as used herein may be used to describe various elements. These are merely used to distinguish one element from another and are not intended to limit the scope of the elements. For example, a first element could also be termed a second element, and, similarly, a second element could also be termed a first element.

As used in this specification and the claims, the terms "a," "an," "the," and/or "the" are not specific to a singular, but may include a plurality, unless the context clearly dictates otherwise. In general, the terms "comprises" and "comprising" merely indicate that the steps and elements are explicitly identified, and they do not constitute an exclusive list, as other steps or elements may be included in a method or apparatus. The term "based on" is based at least in part on. The term "one embodiment" means "at least one embodiment"; the term "another embodiment" means "at least one additional embodiment". Related definitions of other terms will be given in the description below. Hereinafter, without loss of generality, in describing the related art regarding vibration signals in the present invention, a description of "microphone" or "microphone" will be employed. The description is only one form of conductive application, and it will be understood by those of ordinary skill in the art that the "microphone" or "microphone" may be replaced by other similar terms, such as "hydrophone", "transducer", "acousto-optic modulator" or "acousto-electric conversion device", etc. Various modifications and changes in form and detail of the specific manner and steps of implementing the microphone will be apparent to those skilled in the art upon an understanding of the basic principles of the microphone apparatus without departing from such principles. However, such modifications and variations are still within the scope of the present description.

The present specification provides a microphone. The microphone may include an acoustic-to-electrical transducer and an acoustic structure. The acoustic-electric converter comprises a base body and a vibrating diaphragm connected with the base body. The acoustic-to-electric converter may be used to convert an acoustic signal into an electrical signal. The acoustic structure includes an acoustic duct and an acoustic cavity. The acoustic cavity is in acoustic communication with the acoustic-to-electrical converter and with the exterior of the microphone through the sound guide tube. The sound guide tube and the acoustic cavity of the acoustic structure may constitute a filter having a function of adjusting the frequency component of sound. The filtering characteristics of an acoustic structure are determined by the structural parameters of the structure, and the filtering process occurs in real time. The acoustic structure may have a first resonant frequency, i.e. components of the acoustic signal at the first resonant frequency will resonate within the acoustic structure, and frequency components around the first resonant frequency are amplified. The acoustic-electric converter may have a second resonance frequency, that is, a component of the second resonance frequency in the acoustic signal may resonate during the acoustic-electric conversion by the acoustic-electric converter, and a frequency component near the second resonance frequency may be amplified. In some embodiments, the magnitude, location, etc. of the first resonant frequency and/or the second resonant frequency may be adjusted by adjusting structural parameters of the acoustic-to-electrical converter and/or the acoustic structure. For example, the first resonant frequency can be reduced by adjusting the equivalent stiffness and the equivalent mass of the acoustic-electric converter, so that the absolute value of the difference between the first resonant frequency and the second resonant frequency can be not more than 1000Hz, and therefore, the frequency components near the second resonant frequency can be amplified for the second time while the frequency components near the first resonant frequency of the acoustic signal are amplified, and the Q value and the sensitivity of the microphone near the resonance peak corresponding to the second resonant frequency are improved. In some embodiments, the first resonant frequency can be adjusted so that the first resonant frequency is equal to the second resonant frequency, so that frequency components of the sound signal near the first resonant frequency/the second resonant frequency can be amplified twice, and the Q value and the sensitivity of the microphone near a resonance peak corresponding to the first resonant frequency can be improved without increasing the number of the acoustic-electric converters.

Fig. 1 is a simplified schematic structural diagram of a microphone according to some embodiments of the present description. As shown in fig. 1, the microphone 100 may include a housing 110, an acoustic-to-electric converter 120, an acoustic structure 130, a first cavity 140, and an application specific integrated circuit 150.

In some embodiments, microphone 100 may include any sound signal processing device that converts sound signals into electrical signals, such as a microphone, hydrophone, acousto-optic modulator, or the like, or other acousto-electric conversion device. In some embodiments, the microphone 100 may include a moving coil microphone, a ribbon microphone, a condenser microphone, a piezoelectric microphone, an electret microphone, an electromagnetic microphone, a carbon particle microphone, or the like, or any combination thereof, differentiated by transduction principles. In some embodiments, the microphone 100 may comprise an air-conducting (i.e., air-conducting) microphone or a combination of air-conducting and bone-conducting microphones, differentiated by sound pickup. In some embodiments, the microphone 100 may include an electret microphone, a silicon microphone, or the like, differentiated by the manufacturing process. In some embodiments, microphone 100 may be disposed on a mobile device (e.g., a cell phone, a sound recording pen, etc.), a tablet computer, a laptop computer, a vehicle-mounted device, a monitoring device, a medical device, an athletic equipment, a toy, a wearable device (e.g., a headset, a helmet, glasses, a necklace, etc.), etc., with pickup functions.

The housing 110 may be configured to house one or more components of the microphone 100 (e.g., at least one acoustic-to-electrical converter 120, an acoustic structure 130, etc.). In some embodiments, the housing 110 may be a rectangular parallelepiped, a cylinder, a prism, a truncated cone, or other irregular structure. In some embodiments, the housing 110 is an internally hollow structure that may form one or more acoustic cavities. In some embodiments, the microphone 100 may include a plate (e.g., the plate 1412 shown in fig. 14), and the plate 1412 may be located in an acoustic cavity formed by the housing 110. For example, a circumferential side of the plate body 1412 may be connected with an inner wall of the case 110, thereby dividing an acoustic chamber formed by the case 110 into the acoustic chamber 131 and the first chamber 140. The first cavity 140 may be used to house the acoustic-to-electric converter 120 and the asic 150. The acoustic cavity 131 may house or be at least a portion of the acoustic structure 130. In some embodiments, the acoustic-to-electrical converter 120 may be disposed in an acoustic cavity 131 of the acoustic structure 130. Details regarding the arrangement of the acoustic-to-electric converter in the acoustic cavity of the acoustic structure can be seen in fig. 2 and the related description. For convenience of description, the description will mainly take the case that the acoustic-electric converter 120 is disposed in the first cavity 140 as an example, and the case that the acoustic-electric converter 120 is disposed in the acoustic cavity 131 of the acoustic structure 130 may be the same or similar.

In some embodiments, the material of the housing 110 may include, but is not limited to, one or more of metal, alloy material, polymer material (e.g., acrylonitrile-butadiene-styrene copolymer, polyvinyl chloride, polycarbonate, polypropylene, etc.), etc.

In some embodiments, the acoustic-to-electrical converter 120 may be used to convert acoustic signals into electrical signals. Illustratively, and by way of example in the embodiment shown in fig. 14, microphone 1400 may include one or more sound inlet holes 1421, with one or more sound inlet holes 1421 located on plate 1412. The acoustic structure 1430 may communicate with the at least one acoustic-to-electric converter 1420 through one or more acoustic apertures 1421 in the plate 1412 and transmit the sound signal conditioned by the acoustic structure 1430 to the acoustic-to-electric converter 1420. For another example, external sound signals picked up by microphone 1400 may be conditioned (e.g., filtered, divided, amplified, etc.) by acoustic structure 1430 and then may enter the cavity (if any) of acoustic transducer 1420 from acoustic port 1421. The acoustic-to-electric converter 120 may pick up the acoustic signal and convert it into an electrical signal.

In some embodiments, the acoustic-to-electrical converter 120 may include one or more of a capacitive acoustic-to-electrical converter, a piezoelectric acoustic-to-electrical converter, an electret acoustic-to-electrical converter, an electromagnetic acoustic-to-electrical converter, a ribbon acoustic-to-electrical converter, and the like. In some embodiments, vibrations of the acoustic signal (e.g., air vibrations, solid vibrations, liquid vibrations, magneto vibrations, electro-induced vibrations, etc.) may cause a change in one or more parameters of the acoustic-to-electrical converter 120 (e.g., capacitance, charge, acceleration, light intensity, frequency response, etc., or a combination thereof), and the changed parameters may be detected electrically and output an electrical signal corresponding to the acoustic signal. The piezoelectric acoustic-electric converter may be an element that converts a change in a measured non-electric quantity (e.g., pressure, displacement, etc.) into a change in voltage. For example, the piezoelectric acoustic-to-electric converter may include a cantilever structure (or diaphragm 122) that is deformed by the received acoustic signal, and the inverse piezoelectric effect caused by the deformed cantilever structure may generate an electrical signal. The capacitive acoustic-to-electric converter may be an element that converts a change in a measured non-electrical quantity (e.g., displacement, pressure, light intensity, acceleration, etc.) into a change in capacitance. For example, the capacitive acoustic-to-electrical converter may include a first cantilever structure and a second cantilever structure that may deform to different extents under vibration, thereby causing a change in the spacing between the first and second cantilever structures. The first cantilever beam structure and the second cantilever beam structure can convert the change of the distance between the first cantilever beam structure and the second cantilever beam structure into the change of capacitance, so that the conversion from a vibration signal to an electric signal is realized.

In some embodiments, the acoustic-to-electric converter 120 may have a second resonant frequency, i.e., a component of the second resonant frequency in the acoustic signal may resonate during the acoustic-to-electric conversion by the acoustic-to-electric converter 120, such that the frequency response curve of the microphone 100 generates a second resonant peak at the second resonant frequency. In some embodiments, the second resonant frequency is related to a structural parameter of the acoustic-to-electric converter 120. In some embodiments, the structural parameters of the acoustic-to-electric converter may include, but are not limited to, one or more of the type of acoustic-to-electric converter, the material of the acoustic-to-electric converter, the size of the acoustic-to-electric converter, the arrangement of the acoustic-to-electric converter, the structure of the internal elements of the acoustic-to-electric converter. For example, the dimensions of the acoustic-to-electric converter may include a length, width, thickness, etc. of the internal elements of the acoustic-to-electric converter (e.g., cantilever beams, diaphragm 122, mass elements, etc.). The material of the acoustic-electric converter may include materials of respective layers (e.g., an elastic layer, a piezoelectric layer, an electrode layer, etc.) constituting an internal element (e.g., a diaphragm) of the acoustic-electric converter. The arrangement of the acoustic-electric converters may include one or more of a linear arrangement, an annular arrangement, a spiral arrangement, and the like. The structure of the internal element of the acoustic-electric converter may include a structure of an internal element (e.g., a diaphragm) constituting the acoustic-electric converter. In some embodiments, the number of the acoustic-to-electric converters 120 may be set according to actual needs. For example, multiple acoustic structures 130 in the microphone 100 may be connected to the same electroacoustic transducer 120. For another example, each of the plurality of acoustic structures 130 may be coupled to one of the acoustic-to-electric converters 120.

In some embodiments, the acoustic-to-electric converter 120 may include a substrate 121 and a diaphragm 122 coupled to the substrate 121. In some embodiments, the base 121 may have a regular or irregular three-dimensional structure having a hollow portion therein. For example, it may be a hollow frame structure, including but not limited to regular shapes such as rectangular frames, circular frames, regular polygonal frames, and any irregular shape. The diaphragm 122 may be located in the hollow portion of the base 121 or at least partially suspended above the hollow portion of the base 121. The portion of the diaphragm 122 located in the hollow portion of the substrate 121 may be referred to as a transduction region 123. The transduction area 123 may convert the sound signal into an electrical signal. In some embodiments, at least a portion of the structure of the diaphragm 122 is physically coupled to the substrate 121. The term "connection" is understood to mean that after the diaphragm 122 and the substrate 121 are separately prepared, the diaphragm 122 and the substrate 121 are fixedly connected by means of gluing, welding, riveting, clamping, bolting, etc., or the diaphragm 122 is deposited on the substrate 121 by means of physical deposition (e.g., physical vapor deposition) or chemical deposition (e.g., chemical vapor deposition) during the preparation process. In some embodiments, at least a portion of the structure of the diaphragm 122 may be fixed to the upper surface or the lower surface of the substrate 121, and at least a portion of the structure of the diaphragm 122 may also be fixed to the sidewall of the substrate 121. For example, the peripheral side of the diaphragm 122 may be connected to the upper surface, the lower surface, or the side wall of the hollow portion of the base 121. It should be noted that, in the present specification, the "hollow portion located in the base 121" or the "hollow portion suspended in the base 121" may mean that the hollow portion is suspended in, below, or above the base 121. For example, in the embodiment shown in fig. 4, a portion of the diaphragm 322 (i.e., the transduction region 323) is suspended above the hollow portion of the base 321. In some embodiments, the diaphragm 122 may include a vibration unit and an acoustic transduction unit. In some application scenarios, the diaphragm 122 may generate vibrations based on an external vibration signal, and the vibration unit deforms in response to the vibrations of the diaphragm 122; the acoustic transduction unit may generate an electrical signal based on the deformation of the vibration unit. The description of the vibration unit and the acoustic transducer unit is provided for convenience of description of the operation principle of the diaphragm 122, and does not limit the actual composition and structure of the diaphragm 122. In other embodiments, the vibration unit may not be necessary and its function may be entirely performed by the acoustic transduction unit. For example, an electrical signal may be generated by the acoustic transduction unit in direct response to the vibration of the diaphragm 122 with some modification to the structure of the acoustic transduction unit.

The acoustic transduction unit refers to a portion of the diaphragm 122 that converts deformation of the vibration unit into an electrical signal. In some embodiments, the acoustic transduction unit may include at least two electrode layers (e.g., a first electrode layer and a second electrode layer), a piezoelectric layer, and the piezoelectric layer may be located between the first electrode layer and the second electrode layer. The piezoelectric layer is a structure that can generate a voltage on both end surfaces when an external force acts on the piezoelectric layer. In some embodiments, the piezoelectric layer may be a piezoelectric polymer film obtained by a deposition process of a semiconductor, such as magnetron sputtering, metal-organic chemical vapor deposition (Metal-organic Chemical Vapor Deposition, MOCVD). In the embodiment of the present specification, the piezoelectric layer may generate a voltage under the deformation stress of the vibration unit, and the first electrode layer and the second electrode layer may collect the voltage (electrical signal). In some embodiments, the material of the piezoelectric layer may include a piezoelectric thin film material, which may be a thin film material (e.g., AIN thin film material) formed by a deposition process (e.g., a magnetron sputtering deposition process). In other embodiments, the material of the piezoelectric layer may include a piezoelectric crystal material and a piezoelectric ceramic material. The piezoelectric crystal refers to a piezoelectric single crystal. In some embodiments, the piezoelectric crystal material may include crystal, sphalerite, diborite, tourmaline, zincite, gallium arsenide (GaAs), barium Titanate (BT) and its derivative structure crystals, KH2PO4, naKC4 h4o6.4h2o (rocholates), and the like, or any combination thereof. The piezoelectric ceramic material is a piezoelectric polycrystal formed by irregularly collecting fine grains obtained by solid phase reaction and sintering between powder particles of different materials. In some embodiments, the piezoelectric ceramic material may include barium titanate, lead zirconate titanate (PZT), lead barium lithium niobate (PBLN), modified lead titanate, aluminum nitride (AIN), zinc oxide (ZnO), or any combination thereof. In some embodiments, the piezoelectric layer material may also be a piezoelectric polymer material, such as polyvinylidene fluoride (PVDF), or the like.

In some embodiments, the substrate 121 and the diaphragm 122 may be located in the housing 110, the substrate 121 is fixedly connected to an inner wall of the housing 110, and the diaphragm 122 is carried on the substrate 121. The air vibration may enter the inside of the electroacoustic transducer through the sound entrance hole of the microphone 100 and drive the diaphragm 122 to vibrate. Illustratively, in the embodiment shown in fig. 14, air vibration may enter the inside of the acoustic-electric converter through the sound guide 1432 and the sound inlet 1421 in order to cause the diaphragm 122 to vibrate, thereby causing the vibration unit of the diaphragm 122 to deform. In some embodiments, when the vibration unit is deformed, the piezoelectric layer of the acoustic transduction unit generates a potential difference (voltage) by deformation stress of the vibration unit, and at least two electrode layers (e.g., a first electrode layer and a second electrode layer) respectively located on the upper surface and the lower surface of the piezoelectric layer in the acoustic transduction unit may collect the potential difference to convert an external vibration signal into an electrical signal. As an exemplary illustration only, the acoustic-electric converter 120 described in the embodiments of the present specification may be applied to headphones (e.g., air conduction headphones), eyeglasses, virtual reality devices, helmets, etc., and the acoustic-electric converter 120 may pick up a vibration signal (e.g., air vibration) and convert it into an electrical signal, enabling collection of sound. It should be noted that the substrate 121 is not limited to a separate structure from the housing of the acoustic-to-electric converter 120, and in some embodiments, the substrate 121 may also be a part of the housing of the acoustic-to-electric converter 120.

After receiving an external vibration signal (for example, an air vibration signal), the electroacoustic transducer 120 converts the vibration signal into an electrical signal by using the diaphragm 122 (including an acoustic transducer unit and a vibration unit), processes the electrical signal by using a back-end circuit (for example, an application specific integrated circuit 150), and outputs the electrical signal. The resonance may be also referred to as "resonance", and when the external force is applied to the acoustic-electric converter 120 at the same or very close frequency to the natural oscillation frequency of the system, the phenomenon that the amplitude increases sharply is referred to as resonance, and the frequency at which resonance occurs is referred to as "resonance frequency". As described in the foregoing embodiments, in this specification, the resonance frequency of the acoustic-electric converter 120 may be referred to as a second resonance frequency. The acoustic-electric converter 120 has a natural frequency. When the frequency of the external vibration signal approaches the natural frequency, the diaphragm 122 generates a larger amplitude, thereby outputting a larger electrical signal. Therefore, the response of the acoustic-electric converter 120 to the external vibration may appear to generate a formant around the natural frequency. Therefore, the resonance frequency of the acoustic-electric converter 120 is substantially equal in value to the natural frequency. In some embodiments, the natural frequency of the acoustic-to-electric converter 120 may refer to the natural frequency of the diaphragm 122.

In some embodiments, the acoustic-electric converter 120 may be equivalently operated as the mass-spring-damping system model shown in fig. 2, and the vibration rule of the mass-spring-damping system model is consistent with the rule of the mass-spring-damping system model. The motion of the system can be described by the differential equation of formula (1):

wherein M is the mass of the system, R is the damping of the system, K is the elastic coefficient of the system, F is the driving force amplitude, x is the displacement of the system, and ω is the driving force circular frequency. Solving for steady state displacement based on equation (1) yields:

x＝x _a cos(ωt-θ) (2)

wherein,,

further, a displacement amplitude ratio (normalized) equation can be obtained based on the equation (1) and the equation (2):

where f may represent the frequency of the system, f ₀ Representing the resonant frequency of the system, i.e. the second resonant frequency f ₂ ，

Q _M Can represent mechanical quality factors, < >>

The static displacement amplitude (or displacement amplitude when ω=0) may be represented.

In some embodiments, the influencing parameter of the second resonant frequency may include, but is not limited to, a system equivalent stiffness, a system equivalent mass, a system equivalent relative damping coefficient (damping ratio) under the influence of the excitation external force. In some embodiments, the system equivalent stiffness is positively correlated to a resonant frequency on the system of the acousto-electric transducer, the system equivalent mass is negatively correlated to a second resonant frequency on the system of the acousto-electric transducer, and the system equivalent relative damping coefficient (damping ratio) is negatively correlated to the second resonant frequency on the system of the acousto-electric transducer. In some embodiments, the frequency response satisfies the following formula:

Wherein: f (f) ₂ The resonance frequency of the system of the acoustic-electric converter 120 is k, m, ζ, and k are the system equivalent stiffness, system equivalent mass, and system equivalent relative damping coefficient (damping ratio).

In some embodiments, for most acoustic-to-electrical converters, particularly piezoelectric-type acoustic-to-electrical converters, the system equivalent relative damping coefficient is typically small, and the resonant frequency of the system is primarily affected by the equivalent stiffness and equivalent mass. Taking the electroacoustic transducer 320 shown in fig. 3 and 4 as an example, the diaphragm 322 thereof provides a spring and damping effect as well as a mass effect for the vibration system. Thus, the diaphragm 322 affects mainly the system equivalent stiffness k, and also the system equivalent mass m. Taking the electroacoustic transducer 1020 shown in fig. 10 and 11 as an example, the diaphragm 1022 thereof provides a spring and damping effect for the vibration system, and the mass element 1025 provides a mass effect. Thus, the diaphragm 1022 primarily affects the system equivalent stiffness k, while also affecting the system equivalent mass m; the mass element 1025 affects mainly the system equivalent mass m, as well as the system equivalent stiffness k. Therefore, the resonant frequency equation (4) can be simplified as:

as can be seen from the formula (5), the resonant frequency (i.e., the second resonant frequency f) of the electroacoustic transducer 120 ₂ ) Related to the equivalent stiffness k and equivalent mass m of its internal components (e.g., diaphragm 122), i.e., the second resonant frequency f of the electroacoustic transducer 120 ₂ In positive correlation with the equivalent stiffness k of its internal element and in negative correlation with the equivalent mass m of its internal element. The equivalent stiffness k may be stiffness of the electroacoustic transducer 120 after being equivalent to a mass-spring-damper system model, and the equivalent mass m is mass of the electroacoustic transducer 120 after being equivalent to a mass-spring-damper system model. In some embodiments, to adjust the second resonant frequency f of the acousto-electric transducer 120 ₂ The equivalent stiffness k and/or the equivalent mass m of the diaphragm 122 may be adjusted.

In some embodiments, the first and second regions may be selected by selecting different onesTo make the diaphragm 122 and a mass element (e.g., the mass element 1025 of fig. 11) and the like described below to adjust the second resonant frequency f of the electroacoustic transducer 120 ₂ . In some embodiments, the second resonant frequency f of the acoustic-to-electric converter 120 may be adjusted by designing the structure of the acoustic-to-electric converter 120, e.g., the structure of the diaphragm 122 having different Young's moduli, the structure of the diaphragm 122 with a through hole (e.g., the through hole 92211 of FIG. 9) provided therein, the structure of the diaphragm 122 plus a mass element ₂ . In some embodiments, the second resonant frequency f of the acoustic-to-electric converter 120 may be adjusted by sizing different components, e.g., sizing the length, width, thickness, etc. of the diaphragm 122, mass element, etc ₂ 。

In some embodiments, the second resonant frequency f of the acoustic-to-electrical converter 120 may be reduced by reducing the equivalent stiffness k of the diaphragm 122 ₂ . In some embodiments, the transduction region 123 may include a first region 1231 and a second region 1232. Wherein the Young's modulus of the first region 1231 is greater than the Young's modulus of the second region 1232. In the present embodiment, by dividing the diaphragm 122 into the first region 1231 and the second region 1232 having different young's moduli, and the young's modulus of the second region 1232 is smaller than that of the first region 1231, the equivalent stiffness k of the diaphragm 122 can be effectively reduced, and finally the second resonance frequency f of the electroacoustic transducer 120 is reduced ₂ 。

In some embodiments, the shape of the first region 1231 and the second region 1232 may include one of a regular shape or an irregular shape, or a combination thereof, of a rectangle, a circle, a trapezoid, a triangle, a sector, and the like. For example, in the embodiment shown in fig. 3, the first region 3231 is circular. For another example, the first region 1231 may have a circular ring shape. The shapes of the first and second regions 1231 and 1232 may refer to shapes of the first and second regions 1231 and 1232 projected in the thickness direction of the diaphragm 122.

In some embodiments, the shape of the first region 1231 and the second region 1232 may be the same or different. For example, the first region 1231 and the second region 1232 may each have a circular shape. In another example, as shown in fig. 3 and 4, the first region 3231 may be circular in shape, the second region 3232 may be circular in shape, and the second region 3232 surrounds the circumference of the first region 3231.

In some embodiments, the equivalent stiffness k of the first region 1231 and the second region 1232 directly affects the equivalent stiffness k of the acoustic-to-electric converter 120. The equivalent stiffness k of the first and second regions 1231, 1232 is positively correlated to the young's modulus of the material comprising the first and second regions 1231, 1232. It is therefore necessary to control the young's modulus of the first region 1231 and the second region 1232 to achieve the desired second resonance frequency f ₂ 。

In some embodiments, the young's modulus of the first region 1231 and the second region 1232 may be changed by changing the material of fabrication. In some embodiments, the first region may be made of a semiconductor material, such as silicon, silicon oxide, silicon nitride, silicon carbide, or the like. In some embodiments, the second region 1232 may be made of a polymeric material. For example, polyimide (PI), polydimethylsiloxane (PDMS), parylene (Parylene), hydrogels, various photoresists, and various glues, etc., including but not limited to gels, silicones, acrylics, polyurethanes, rubbers, epoxies, hot melts, photo-curing, etc. In some embodiments, the material from which the second region 1232 is made may be a silicone adhesive-type glue, a silicone sealing-type glue.

In some embodiments, the range of values for Young's modulus for the first region 1231 may include 30GPa to 400GPa. In some embodiments, the range of values for Young's modulus for the first region 1231 may include 40GPa to 300GPa. In some embodiments, the Young's modulus of the first region 1231 may range from 50GPa to 200GPa. In some embodiments, the Young's modulus of the second region 1232 may range from 50kPa to 20GPa. In some embodiments, the Young's modulus of the second region 1232 may range from 75kPa to 15GPa. In some embodiments, the Young's modulus of the second region 1232 may range from 100kPa to 10GPa.

In the present embodiment, the thickness of each portion of the diaphragm 122 may be considered to be the same or approximately the same. The approximately same may refer to a range of thickness difference thresholds where the difference between the two thicknesses does not exceed a set value. For example, the thickness difference does not exceed 1%, 2%, 5%, etc. of the thickness of the diaphragm 122. In some embodiments, factors that may affect the equivalent stiffness k of the diaphragm 122 include the areas of the first region 1231 and the second region 1232 (i.e., the projected areas of the first region 1231 and the second region 1232 along the thickness direction of the diaphragm 122), so that the areas of the first region 1231 and the second region 1232 also need to be controlled. In some embodiments, the ratio of the area of the second region 1232 to the area of the first region 1231 may range from 5% to 2000%. In some embodiments, the ratio of the area of the second region 1232 to the area of the first region 1231 may range from 7.5% to 1500%. In some embodiments, the ratio of the area of the second region 1232 to the area of the first region 1231 may range from 10% to 1000%.

In some embodiments, the diaphragm 122 may include a first diaphragm (e.g., the first diaphragm 7221 of fig. 8) and a second diaphragm (e.g., the second diaphragm 7222 of fig. 8). The peripheral side of the first diaphragm 7221 is connected to the base 721, and a through hole 72211 is formed in the transduction region 723 of the first diaphragm 7221. The second diaphragm 7222 is disposed on the upper surface of the first diaphragm 7221 and covers the through hole 72211, and the young modulus of the first diaphragm 7221 is greater than the young modulus of the second diaphragm 7222. In some cases, the airtightness of the acoustic-electric converter 720 can be effectively ensured by providing the second diaphragm 7222 to cover the through hole 7221. In some cases, the equivalent stiffness k of the diaphragm 722 as a whole may be adjusted by replacing the second diaphragm 7222 with a different Young's modulus, thereby adjusting the second resonant frequency f of the electroacoustic transducer 720 ₂ And adjusting.

In some embodiments, the number of through holes may be one, two, three, or more. For example, the transduction region 123 may have a circular shape, and the number of through holes may be one and disposed at the center of the diaphragm 122 (e.g., the transduction region 123 of the diaphragm 122) (i.e., the center of the through hole coincides or approximately coincides with the center of the diaphragm 122). For another example, in the embodiment shown in fig. 7, ten through holes 72211 are provided in total on the first diaphragm 7221.

In some embodiments, the plurality of through holes may be regularly or randomly disposed on the diaphragm 122 (e.g., the transduction region 123). Illustratively, in the embodiment shown in fig. 7, the transduction region 723 of the first diaphragm 7221 is circular in shape, and ten through holes 72211 may be disposed around the center of the first diaphragm 7221, or may be understood to be disposed at intervals along the circumference of the transduction region 723 of the first diaphragm 7221. In another example, the plurality of through holes may be arranged in a matrix form. In yet another example, the plurality of through holes may be arranged in a line shape.

In some embodiments, the equivalent stiffness k of the diaphragm 122 is related to the diameter of the through-hole, e.g., the larger the diameter of the through-hole, the smaller the stiffness of the diaphragm 122, the smaller the diameter of the through-hole, and the larger the stiffness of the diaphragm 122. For the above reasons, the diameter of the through hole needs to be controlled. In some embodiments, the diameter of the via may range in value from 10um to 400um. In some embodiments, the diameter of the via may range in value from 15um to 300um. In some embodiments, the diameter of the via may range in value from 20um to 200um. In the present embodiment, the equivalent stiffness k of the diaphragm 122 can be adjusted by adjusting the aperture of the through hole to achieve the desired second resonant frequency f of the electroacoustic transducer 120 ₂ Is a target of (a).

In some embodiments, the second diaphragm may cover only the through hole. For example, in the embodiment shown in fig. 7 and 8, the second diaphragm 7222 has a circular ring shape, and ten through holes 72211 can be covered just when the second diaphragm 7222 is disposed on the upper surface of the first diaphragm 7221. In other embodiments, the second diaphragm may cover the entire upper surface of the first diaphragm. For example, in the embodiment shown in fig. 9, the first diaphragm 9221 and the second diaphragm 9222 are each rectangular and the second diaphragm 9222 is the same or approximately the same length, width, or both as the first diaphragm 9221. As used herein, approximately the same may refer to a difference in length and a width that does not exceed a set threshold. For example, the length difference is not more than 1%, 2%, 3%, 5% of the length of the first diaphragm 9221.

In some embodiments, the first diaphragm and the second diaphragmThe Young's modulus is positively correlated with the equivalent stiffness k of the electroacoustic transducer 120, so that the Young's moduli of the first and second diaphragms need to be controlled to achieve the desired second resonant frequency f ₂ . In some embodiments, the Young's modulus of the first diaphragm may range from 20GPa to 500GPa. In some embodiments, the Young's modulus of the first diaphragm may range from 30GPa to 300GPa. In some embodiments, the Young's modulus of the first diaphragm may range from 50GPa to 200GPa. In some embodiments, the Young's modulus of the second diaphragm may range from 40kPa to 40GPa. In some embodiments, the Young's modulus of the second diaphragm may range from 60kPa to 20GPa. In some embodiments, the Young's modulus of the second diaphragm may range from 100kPa to 10GPa.

In some embodiments, the equivalent stiffness k of the first and second diaphragms as a whole is related to the thickness of the first and second diaphragms, so it is necessary to control the thickness of the first and second diaphragms within a certain range. In some embodiments, the ratio of the thickness of the first diaphragm to the thickness of the second diaphragm may range from 0.5 to 100. In some embodiments, the ratio of the thickness of the first diaphragm to the thickness of the second diaphragm may range from 0.75 to 75. In some embodiments, the ratio of the thickness of the first diaphragm to the thickness of the second diaphragm may range from 1 to 50. In some embodiments, the thickness of the first diaphragm may range from 200nm to 10um. In some embodiments, the thickness of the first diaphragm may range from 300nm to 5um. In some embodiments, the range of values for the thickness of the first diaphragm may include 500nm-2um. In some embodiments, the thickness of the second diaphragm may range from 200nm to 100um. In some embodiments, the thickness of the second diaphragm may range from 300nm to 75um. In some embodiments, the thickness of the second diaphragm may range from 500nm to 50um.

In some embodiments, the second diaphragm may not be necessary, and the through hole may be covered by a member (a sheet member, a block member, or the like) made of another material having a young's modulus lower than that of the first diaphragm, so that the equivalent stiffness k of the whole diaphragm 122 can be reduced while the air tightness is ensured.

In some embodiments, the acoustic-to-electric converter 120 can include a mass element (e.g., the mass element 1025 of fig. 10 and 11) coupled to the diaphragm 122. In some cases, by designing the mass element such that the mass change contribution in the resonant system constituted by the acoustic-electric converter 120 is larger than the stiffness contribution, the equivalent mass m of the acoustic-electric converter 120 is increased, and the second resonance frequency f of the acoustic-electric converter 120 is lowered ₂ 。

In some embodiments, the mass element may be coupled to the diaphragm 122, and the mass element is in the direction of vibration of the diaphragm 122 (i.e., in a direction perpendicular to the plane of the diaphragm 122). In some embodiments, the projection of the mass element may be located within the projection of the diaphragm 122. In some embodiments, the mass element may be disposed on an upper or lower surface of the diaphragm 122. As shown in fig. 11 and 12, a mass element 1025 and a mass element 1125 are provided on the lower surface of the diaphragm 1022 and the upper surface of the diaphragm 1122, respectively. In some embodiments, the diaphragm 122 is provided with at least one mass element at a central location. The center position refers to a position at which a distance from the edge of the diaphragm 122 is greater than or equal to a preset distance. In some embodiments, the distance between the centerline of the mass element and the centerline of the diaphragm 122 is greater than or equal to the distance between the mass element centerline and the edge of the diaphragm 122.

In some embodiments, the number of mass elements may be one, two, or more than two. For example, in the embodiment shown in fig. 10-13, the number of mass elements is one. In some alternative embodiments, the number of mass elements may be two or more. When the number of the mass elements is two or more, the shape, size and/or material of each mass element may be the same or different. In some embodiments, in order to prevent the uneven curve from excessively causing excessive concentration of stress at the corner points, the embodiment of the present specification selects the projection of the diaphragm 122 in the thickness direction of the diaphragm 122 to be circular.

In some embodiments, the mass element may be any convenient-to-make member including, but not limited to, a columnar member, a block member, a bar member, a rod member, a sheet member, a ball member, and the like. In some embodiments, the mass element may be a weight. The weights may have different gauges to facilitate replacement to provide different qualities. In some embodiments, the projected shape of the weight along a direction perpendicular to the direction of vibration of the diaphragm 122 may include, but is not limited to, triangular, rectangular, trapezoidal, inverted trapezoidal, circular, and the like. For example, in the embodiment shown in fig. 10 to 13, the projection shape of the weight block in the direction perpendicular to the vibration direction of the diaphragm 122 may be a circle.

In some embodiments, when the acoustic-to-electric converter 120 receives an air vibration signal, the mass element may vibrate in response to the air vibration signal. In some embodiments, when the acoustic-to-electric converter 120 is applied to a vibration sensor or microphone (e.g., microphone 100), the material density of the mass element has a large effect on the resonance peak and sensitivity of the frequency response curve of the vibration sensor or microphone. For example, in the case of the same volume, the higher the density of the mass element, the higher the mass thereof, and the lower the resonance peak of the vibration sensor or microphone moves, and the lower frequency sensitivity of the vibration sensor or microphone increases. In some embodiments, the material of the mass element may be a material having a density greater than a certain density threshold (e.g., 6g/cm ³ ) Is a material of (3). In some embodiments, the range of values for the material density of the mass element may include 6g/cm ³ -20g/cm ³ . In some embodiments, the range of values for the material density of the mass element may include 6g/cm ³ –15g/cm ³ . In some embodiments, the range of values for the material density of the mass element may include 6g/cm ³ –10g/cm ³ . In some embodiments, the range of values for the material density of the mass element may include 6g/cm ³ –8g/cm ³ . In some embodiments, the mass element may be a metallic material or a nonmetallic material. Exemplary metallic materials can include, but are not limited to, steel (e.g., stainless steel, carbon steel, etc.), light-weight alloys (e.g., aluminum alloys, beryllium copper, magnesium alloys, titanium alloys, etc.), and the like, or any combination thereof. Exemplary embodimentsNonmetallic materials may include, but are not limited to, polyurethane foam, glass fiber, carbon fiber, graphite fiber, silicon carbide fiber, silicon oxide, silicon nitride, and the like.

Similarly, the size of the mass element may affect the volume and performance of the acoustic-to-electric converter 120, as well as requiring control. For convenience of description, the mass element of the present specification may be a cylindrical member. In some embodiments, the ratio of the radius of the diaphragm 122 to the radius of the mass element may range from 0.8 to 10. In some embodiments, the ratio of the radius of the diaphragm 122 to the radius of the mass element may range from 1 to 7.5. In some embodiments, the ratio of the radius of the diaphragm 122 to the radius of the mass element may range from 1.2 to 5. In some embodiments, the radius of the diaphragm 122 may range from 100um to 2500um. In some embodiments, the radius of the diaphragm 122 may range from 200um to 2000um. In some embodiments, the radius of the diaphragm 122 may range from 300um to 1500um. In some embodiments, the range of values for the mass element radius may include 10um-3125um. In some embodiments, the range of values for the mass element radius may include 27um-2000um. In some embodiments, the range of values for the mass element radius may include 60um-1250um.

In some embodiments, the mass element may be combined with the diaphragm 122 of the previous embodiments including the first region 1231 and the second region 1232. For example, the transduction region 123 of the diaphragm 122 includes a first region 1231 and a second region 1232, and the mass element may be disposed in the first region 1231 and/or the second region 1232. In some cases, providing the transduction region 123 with the first region 1231 and the second region 1232 having different young's moduli and providing the mass element in the first region 1231 and/or the second region 1232 may increase the second resonance frequency f while adjusting the equivalent stiffness k and the equivalent mass m of the acoustic-to-electric converter ₂ Is not limited. In some embodiments, the mass element may be combined with the diaphragm 122 having the through hole in the foregoing embodiments. For example, the diaphragm 122 includes a first diaphragm with a through hole and a second diaphragm disposed on the upper surface of the first diaphragm and covering the upper surface of the first diaphragmThe measuring element may be arranged on the lower surface of the first diaphragm and/or on the side of the second diaphragm remote from the first diaphragm.

In some embodiments, the acoustic-to-electric converter 120 may be applied in a vibration sensor or microphone (e.g., microphone 100). For example, the acoustic-to-electric converter 120 may be applied in a microphone, converting a received sound signal into an electrical signal through its transduction area 123. In some embodiments, the microphone may include a capacitive microphone, a piezoelectric microphone, a piezoresistive microphone, or the like. In some embodiments, the acoustic-to-electric converter 120 may also be applied in a condenser microphone. The acoustic-electric converter 120 further includes a back plate 124, and the peripheral side of the back plate 124 is embedded in the substrate 121 and forms an included angle with the diaphragm 122 within a preset angle range. In some embodiments, the range of values for the predetermined range of angles may include 0 degrees to 5 degrees. In some embodiments, the range of values for the predetermined range of angles may include 0 degrees to 2 degrees. In some embodiments, the backplate 124 and the diaphragm 122 may be parallel to one another. The diaphragm 122 and the backplate 124 form a parallel plate capacitor structure. When the diaphragm 122 senses an external audio sound pressure signal, the distance between the diaphragm 122 and the back plate 124 is changed, the capacitance and the voltage are changed, and the capacitance change is converted into a voltage signal change by the application specific integrated circuit 150 and is output.

In some embodiments, the acoustic structure 130 may include an acoustic cavity 131 and an acoustic pipe 132. In some embodiments, the acoustic structure 130 may communicate with the exterior of the microphone 100 through a sound guide 132. In some embodiments, the sound guide 132 may be disposed on a cavity wall constituting the acoustic cavity 131. Illustratively, the microphone 1400 shown in fig. 14 is shown as an example, for example, the sound guide 1432 may be disposed on the cavity wall 1411. As another example, a first end of the sound tube 1432 may be located on a cavity wall (e.g., cavity wall 1411) that forms the acoustic cavity 1431, and a second end of the sound tube 1432 may extend outside of the housing 1410. As another example, a first end of the sound tube 1432 may be located on a cavity wall (e.g., cavity wall 1411) that forms the acoustic cavity 1431, and a second end of the sound tube 1432 may extend into the acoustic cavity 1431. External sound signals may be transmitted to the acoustic chamber 1431 through the sound guide tube 1432.

In some embodiments, parameters such as the size, shape, location, etc. of the sound guide 132 may be set according to actual needs, for example, a desired resonant frequency (which may also be referred to as a first resonant frequency) of the acoustic structure 130. The shape of the sound guide 132 may include regular and/or irregular shapes such as rectangular parallelepiped, cylindrical, polygonal, etc. In some embodiments, the structure of the sound guide 132 may be a variable diameter structure. For example, one or more side walls of the sound guide 132 may be at an oblique angle to the central axis of the sound guide 132 such that the tube diameter at the first end of the sound guide 132 is different from the tube diameter at the second end.

In some embodiments, the acoustic structure 130 may have a first resonant frequency, i.e., a frequency component of the first resonant frequency in the acoustic signal may resonate within the acoustic structure 130, thereby increasing the volume that the frequency component passes to the acoustic-to-electrical converter 120. Accordingly, the acoustic structure 130 may be arranged such that the frequency response curve of the microphone 100 generates a resonance peak at the first resonance frequency, so that the sensitivity of the microphone 100 may be improved within a certain frequency band including the first resonance frequency. In some embodiments, the first resonant frequency is related to a structural parameter of the acoustic structure 130. In some embodiments, the structural parameters of acoustic structure 130 may include, but are not limited to, the shape of sound guide 132, the size of acoustic cavity 131, the acoustic resistance of sound guide 132 or acoustic cavity 131 (if any), the roughness of the inner surface of the side wall of sound guide 132, the thickness of sound absorbing material (if any) in sound guide 132, the stiffness of the inner wall of acoustic cavity 131, and the like, or a combination thereof. In some embodiments, by setting structural parameters of the acoustic structure 130, the sound signal conditioned by the acoustic structure 130 may be caused to have a resonance peak at a first resonance frequency after being converted into an electrical signal.

In some embodiments, if the radius of the sound guide 132 is relatively large or the frequency of the sound wave is relatively low as the sound wave propagates in the acoustic structure 130, it may be considered that the sound wave does not have acoustic impedance and thus does not have heat loss as it propagates in the acoustic structure 130. However, in other embodiments, when the radius of the sound guide 132 is small or the frequency of the sound wave is high, the wall of the sound guide 132 affects the motion of the medium particles (e.g., sound propagates in air, which is the medium of sound, and a certain point in air is the medium particles), which causes heat loss during the transmission of the sound wave.

In some embodiments, when the radius of the sound guide 132 ranges from 0.005mm to 0.5mm, the sound guide 132 meeting such a conditional radius may be referred to as a microporous tube. The acoustic impedance of the sound wave is larger when the sound wave propagates in the microporous tube, and the acoustic impedance can be calculated by the following formula:

wherein Z is _a Is acoustic impedance; a is the radius of the sound guide 132; η is the shear viscosity coefficient of the fluid; ρ ₀ Is the density of the medium; l is the length of the sound guide tube 132; j is a complex number; k is an artificially defined quantity. In some embodiments, the artificially defined amount K may be calculated by the following formula:

Where ω is the angular frequency of the sound wave.

In some embodiments, it can be seen from equation (6) and equation (7) that when the sound guide 132 is a microporous tube, the acoustic impedance is inversely proportional to the fourth power of the radius of the sound guide 132, and the acoustic impedance is inversely proportional to the second power of the radius of the sound guide 132. Wherein the acoustic impedance increases exponentially as the radius of the sound guide 132 decreases overall. While acoustic impedance is also linearly inversely related to the length of the sound guide 132.

For the above reasons, in some embodiments, the purpose of greatly improving the sensitivity of the acoustic structure 130 to sound signals may be achieved by increasing the length of the sound guide 132 and/or increasing the radius of the sound guide 132 to reduce the heat loss of the sound wave during propagation.

In some embodiments, the cross-sectional shape of the sound guide 132 along its length may include, but is not limited to, circular, rectangular, triangular, trapezoidal, etc. In the specific embodiment of the present specification, the cross-sectional shape of the sound guide 132 may be circular.

In some embodiments, the range of values for the inner diameter of the sound guide 132 may include 0.1mm-3mm. The inner diameter shown is the diameter of the pilot sound tube 132. In some embodiments, the range of values for the inner diameter of the sound guide 132 may include 0.2mm-2mm. In some embodiments, the range of values for the inner diameter of the sound guide 132 may include 0.3mm-1mm.

In some embodiments, the length of the sound guide 132 may range in value from 1mm to 4mm. In some embodiments, the length of the sound guide 132 may range in value from 1mm to 3mm. In some embodiments, the length of the sound guide 132 may range in value from 1mm to 2mm. In some embodiments, the length of the sound guide 132 may range in value from 1mm to 1.5mm.

In some embodiments, the ratio of the inner diameter of the sound guide 132 to the length of the sound guide 132 is no greater than 1.5. In some embodiments, the ratio of the inner diameter of the sound guide 132 to the length of the sound guide 132 is no greater than 1.2. In some embodiments, the ratio of the inner diameter of the sound guide 132 to the length of the sound guide 132 is no greater than 1. In some embodiments, the ratio of the inner diameter of the sound guide 132 to the length of the sound guide 132 is no greater than 0.5.

In some embodiments, the cross-sectional shape of the acoustic cavity 131 along its thickness may include, but is not limited to, circular, rectangular, trapezoidal, triangular, polygonal, and the like. In the present embodiment, the shape of the acoustic cavity 131 may be circular or square.

In some embodiments, the inner diameter and thickness of the acoustic cavity 131 may also have an impact on the performance of the acoustic structure 130.

In some embodiments, the equivalent (volume equivalent) inner diameter of acoustic cavity 131 can range in value from 1mm to 6mm. The equivalent inner diameter may refer to an inner diameter of an acoustic cavity having the same cavity volume as the acoustic cavity and a circular cross-sectional shape in a thickness direction thereof. In some embodiments, the equivalent inner diameter of acoustic cavity 131 can range in value from 1mm to 5mm. In some embodiments, the equivalent inner diameter of acoustic cavity 131 can range in value from 1mm to 4mm. In some embodiments, the equivalent inner diameter of acoustic cavity 131 can range in value from 1mm to 3mm.

In some embodiments, the thickness of acoustic cavity 131 can range from 1mm to 4mm. In some embodiments, the thickness of acoustic cavity 131 can range from 1mm to 3mm. In some embodiments, the thickness of acoustic cavity 131 can range from 1mm to 2mm. In some embodiments, the thickness of acoustic cavity 131 can range from 1mm to 1.5mm.

In some embodiments, the ratio of the equivalent inner diameter of the acoustic cavity 131 to the thickness of the acoustic cavity 131 is greater than or equal to 1. In some embodiments, the ratio of the equivalent inner diameter of the acoustic cavity 131 to the thickness of the acoustic cavity 131 is greater than or equal to 1.5. In some embodiments, the ratio of the equivalent inner diameter of the acoustic cavity 131 to the thickness of the acoustic cavity 131 is greater than or equal to 2.

In some embodiments, the first resonant frequency of the acoustic structure 130 may be different from the second resonant frequency (e.g., second resonant frequency f ₂ ) The same or different. For example, the first resonant frequency may be less than the second resonant frequency. In this case, the sensitivity of the microphone 100 can be improved in a relatively low frequency range by providing the first resonance frequency introduced by the acoustic structure 130. For another example, the first resonant frequency may be greater than the second resonant frequency. In this case, the sensitivity of the microphone 100 can be improved in a relatively high frequency range by providing the first resonance frequency introduced by the acoustic structure 130. For another example, the absolute value of the difference between the first resonant frequency and the second resonant frequency is not greater than the frequency threshold. In some embodiments, the frequency threshold may be set as desired. For example, the frequency threshold may be 1000Hz, 500Hz, 200Hz, 100Hz, etc. In this case, the resonance peaks of the microphone 100 at the first resonance frequency and the second resonance frequency can be improved, and thus two resonance peak outputs of high Q value (Q value is a quality factor) can be realized with one microphone 100. For another example, the first resonant frequency may be equal to the second resonant frequency Vibration frequency. In this case, the microphone 100 may generate two resonances at the first/second resonant frequencies, so that the sensitivity of the microphone 100 at the resonance peak may be improved, so that the electric signal generated by the microphone 100 has a resonance peak of a higher Q value. Details regarding the first resonance frequency and the second resonance frequency can be found in fig. 16 and 17 and the related description thereof.

In some embodiments, the microphone 100 may include a plurality of acoustic structures 130, and the plurality of acoustic structures 130 may be arranged in parallel, in series, or a combination thereof. In some embodiments, the plurality of acoustic structures 130 in the microphone 100 may have the same or different first resonant frequencies. When the plurality of acoustic structures 130 in the microphone 100 have the same first resonance frequency, the Q value and sensitivity of the microphone 100 at the first resonance frequency can be improved by providing the acoustic structures 130 in the microphone 100. When the plurality of acoustic structures 130 in the microphone 100 have different first resonance frequencies, the sensitivity of the microphone 100 in a wide frequency range can be improved by providing the acoustic structures 130 in the microphone 00.

The asic 150 may obtain and process electrical signals from the transducer 120. In some embodiments, the asic 150 may be directly connected to the transducer 120 by wires (e.g., gold wires, copper wires, aluminum wires, etc.). In some embodiments, the signal processing may include frequency modulation processing, amplitude modulation processing, filtering processing, noise reduction processing, and the like.

The above description of the microphone 100 is for illustrative purposes only and is not intended to limit the scope of the present description. Various changes and modifications may be made by one of ordinary skill in the art in light of the description herein. Such variations and modifications are intended to be within the scope of the present description.

FIG. 3 is a schematic diagram of an exemplary acousto-electric transducer shown in accordance with some embodiments of the present description; FIG. 4 is a schematic view of section A-A of FIG. 3. As shown in fig. 3 and 4, the acoustic-to-electric converter 320 may include a base 321 and a diaphragm 322, and a peripheral side of the diaphragm 322 is physically connected to the base 321, including, but not limited to, bonding, welding, riveting, screwing, integrally molding, and the like.

In some embodiments, the base 321 may be a frame structure having a hollow cavity, and the peripheral side of the diaphragm 322 is connected to the side wall of the hollow cavity. For example, in fig. 4, the base 321 is a rectangular frame having a cylindrical hollow cavity, the diaphragm 322 is a rectangular film-like structure, and the peripheral side of the diaphragm 322 is connected to the rectangular frame. In some embodiments, the diaphragm 322 and the base 321 may define a transduction region 323. As shown in fig. 4, a portion of the diaphragm 322 not connected to the base 321, that is, a portion of the diaphragm 322 located in the hollow cavity may be used as the transduction area 323, and the transduction area 323 has a circular shape.

In some embodiments, transduction region 323 includes a first region 3231 and a second region 3232. The first area 3231 is circular, the second area 3232 is circular, and the second area 3232 surrounds the first area 3231. In some embodiments, the young's modulus of the first region 3231 is greater than the young's modulus of the second region 3232. The range of values of young's modulus of the first region 3231 and the second region 3232 can be found in the description of other embodiments of the present specification.

FIG. 5 is a schematic diagram of an exemplary acousto-electric transducer shown in accordance with further embodiments of the present description; FIG. 6 is a schematic view of section B-B of FIG. 5. As shown in fig. 5 and 6, the acoustic-to-electric converter 520 may include a substrate 521, a diaphragm 522, and a back plate 524.

The substrate 521 in the electroacoustic transducer 520 shown in fig. 5 and 6 may be the same as or similar to the substrate 321 of the electroacoustic transducer 320 shown in fig. 3 and 4. For example, the base 521 and the first region 5231 in the acoustic-electric converter 520 are the same as or similar to the base 321 and the first region 3231 in the acoustic-electric converter 320. Instead, the electroacoustic transducer 320 may be applied to a piezoelectric microphone or a piezoresistive microphone. And the acoustic-to-electric converter 520 further includes a back plate 524, the acoustic-to-electric converter 520 can be applied to a condenser microphone. The peripheral side of the back plate 524 is embedded in the frame of the base 521, and the back plate 524 is located at a side close to the lower surface of the diaphragm 522.

Furthermore, in some embodiments, the diaphragm 522 and the substrate 521 of the acoustic-to-electrical converter 520 define a transduction region 523 (the transduction region 523 is a portion of the diaphragm 522). The transduction region 523 may include a first region 5231 and a second region 5232. The first region 5231 is the same as or similar to the first region 5231 of fig. 4. The second region 5232 can also include a third sub-region 52321 and a fourth sub-region 52322. The third sub-region 52321 and the fourth sub-region 52322 each have a different young's modulus. In some embodiments, the young's modulus of the third sub-region 52321 can be greater than the young's modulus of the fourth sub-region 52322. In some embodiments, the first region 5231 is circular and the second region 5232 is annular. The third sub-area 52321 and the fourth sub-area 52322 are all in a sector shape, the number of the third sub-area 52321 and the fourth sub-area 52322 is two, and the third sub-area 52321 and the fourth sub-area 52322 are mutually connected at intervals to form a circular second area 5232.

FIG. 7 is a schematic diagram of an exemplary acousto-electric transducer shown in accordance with further embodiments of the present description; FIG. 8 is a schematic view in section C-C of FIG. 7; fig. 9 is a schematic cross-sectional view of an exemplary acousto-electric transducer shown in accordance with some embodiments of the present description. As shown in fig. 7 and 8, the acoustic-to-electric converter 720 may include a substrate 721 and a diaphragm 722 coupled to the substrate 721.

The base 721 in the acoustic-electric converter 720 shown in fig. 7 and 8 may be the same as or similar to the base 321 in the acoustic-electric converter shown in fig. 3 and 4. In contrast, the diaphragm 722 of the acoustic-electric converter 720 includes a first diaphragm 7221 and a second diaphragm 7222. The young's modulus of the first diaphragm 7221 is greater than the young's modulus of the second diaphragm 7222. The first diaphragm 7221 is provided with a through hole 72211, and the second diaphragm 7222 is disposed on the upper surface of the first diaphragm 7221 and covers the through hole 72211. In some cases, the provision of the through hole 72211 in the first diaphragm 7221 having a larger young's modulus may reduce the stiffness of the first diaphragm 7221, thereby reducing the equivalent stiffness of the electroacoustic transducer 720 and reducing the second resonant frequency of the electroacoustic transducer 720. In addition, in some cases, covering the through hole 72211 with the second diaphragm 7222 having a smaller young's modulus can ensure the air tightness of the electroacoustic transducer 720 and assist in tuning the second resonance frequency of the electroacoustic transducer 720.

In some embodiments, the transduction region 723 of the first diaphragm 7221 is circular in shape, the number of through holes 72211 is ten, and ten through holes 72211 are disposed around the center of the first diaphragm 7221, which may also be understood as being disposed around the circumference of the transduction region 723. In some embodiments, the apertures of all of the vias 72211 can be the same or different. In this embodiment, the pore diameters of all the through holes 72211 are the same. In some embodiments, the second diaphragm 7222 may have a circular ring shape, and the circular ring-shaped second diaphragm 7222 may be disposed on the first diaphragm 7221 to cover all the through holes 7221 at the same time.

In other embodiments, the second diaphragm may cover the entire upper surface of the first diaphragm. Fig. 9 shows another arrangement of the diaphragm 921. In some embodiments, acoustic-to-electrical converter 920 may include a substrate 921 and a diaphragm 922 coupled to substrate 921.

The base 921, the first diaphragm 9221, and the transduction region 923 and the through hole 92211 provided on the first diaphragm 9221 in the acoustic-electric converter 720 shown in fig. 9 may be the same as or similar to the base 721, the first diaphragm 7221, the transduction region 723, and the through hole 72211 in the acoustic-electric converter shown in fig. 7 and 8. Differently, the first and

second diaphragms

9221 and 9222 of the acoustic-to-electric converter 920 are rectangular and the second diaphragm 9222 is the same or approximately the same as the first diaphragm 9221 in length, width, so that the second diaphragm 9222 may cover the entire upper surface of the first diaphragm 9221. In some embodiments, the first diaphragm 9221 and the second diaphragm 9222 may be physically connected. The manner of attachment includes, but is not limited to, welding, bonding, riveting, integral molding, and the like.

FIG. 10 is a schematic diagram of an exemplary acousto-electric transducer shown in accordance with further embodiments of the present description; FIG. 11 is a schematic view in section D-D of FIG. 10; fig. 12 is a schematic cross-sectional view of an exemplary acousto-electric transducer shown in accordance with further embodiments of the present specification. As shown in fig. 10 and 11, the acoustic-to-electric converter 1020 may include a base 1021, a diaphragm 1022, and a mass element 1025 (e.g., a weight). The peripheral side of the diaphragm 1022 is connected to the base 1021, and forms a transduction region 1023 with the base 1021. The mass element 1025 is disposed in the transduction region 1023 of the base 1021. In some cases, the resonant frequency of the acoustic-to-electric converter 1020 may be effectively reduced by providing a mass element 1025 on the diaphragm 1022 to increase the equivalent mass of the acoustic-to-electric converter 1020. In some cases, the equivalent mass of the acousto-electric transducer 1020 can be adjusted by replacing the mass element 1025 with a different weight to bring the resonant frequency of the acousto-electric transducer 1020 to the target frequency.

As shown in fig. 10 and 11, the transduction area 1023 defined by the base 1021 and the diaphragm 1022 is circular in shape. The projection shape of the mass element 1025 along the thickness direction of the diaphragm 1022 is also circular, and the centers of the two circles coincide. In some embodiments, the mass element 1025 may be disposed on an upper or lower surface of the diaphragm 1022. For example, in the embodiment shown in fig. 10 and 11, the mass member 1025 is disposed on the lower surface of the diaphragm 1022. For another example, in the embodiment shown in fig. 12, mass 1225 is disposed on the upper surface of diaphragm 1222. In some embodiments, the mass member 1025 and the diaphragm 1022 may be physically coupled, including but not limited to, adhesive, welding, riveting, screw coupling, integral molding, and the like.

The acousto-electric converters (acousto-electric converters 1020, 1220) shown in fig. 10 to 12 may be the same as or similar to the acousto-electric converter 320 shown in fig. 3 and 4. For example, the substrate (substrate 1021 shown in fig. 10 and 11, substrate 1221 shown in fig. 12, substrate 1022 shown in fig. 12) of the electroacoustic transducer (electroacoustic transducer 1020 shown in fig. 10 and 11), the diaphragm (diaphragm 1022 shown in fig. 10 and 11, diaphragm 1222 shown in fig. 12), etc. may be the same as or similar to the substrate 321, diaphragm 322, respectively, in the electroacoustic transducer 320, and will not be described again here. In contrast, the transduction region defined by the diaphragm and the base (transduction region 1023 shown in fig. 10 and 11, transduction region 1223 shown in fig. 12) does not distinguish between a first region (first region 3231 shown in fig. 3 and 4) and a second region (second region 3232 shown in fig. 3 and 4).

Fig. 13 is a schematic cross-sectional view of an exemplary acousto-electric transducer shown in accordance with further embodiments of the present specification. As shown in fig. 13, the acoustic-to-electric converter 1320 may include a substrate 1321, a diaphragm 1322, a mass element 1325, and a back plate 1324. The peripheral side of the diaphragm 1322 is connected to the base 1321 and forms a transduction region 1323 with the base 1321. A mass element 1325 is disposed in the transduction region 1323 of the matrix 1321. The matrix 1321 in the acoustic-electric converter 1320 shown in fig. 13 may be the same as or similar to the matrix 1221 in the acoustic-electric converter 1220 shown in fig. 12. For example, the base 1321, the diaphragm 1322, the mass element 1325, and the like of the acoustic-to-electric converter 1320 may be the same as or similar to the base 1221, the diaphragm 1222, the mass element 1225, and the like, respectively, in the acoustic-to-electric converter 1220, and will not be described again here. Instead, the electroacoustic transducer 1220 may be applied to a piezoelectric microphone or a piezoresistive microphone. Whereas the acousto-electric transducer 1320 further comprises a back plate 1324, it can be applied to a condenser microphone. The back plate 1324 is embedded in the frame of the base 1321, and the back plate 1324 is embedded in the base 1321 and is disposed on a side close to the lower surface of the diaphragm 1322.

Fig. 14 is a schematic diagram of an exemplary microphone shown in accordance with some embodiments of the present description. As shown in fig. 14, the microphone 1400 may include a housing 1410, a plate 1412, an acoustic structure 1430, an electroacoustic transducer 1420, and an application specific integrated circuit 1450.

Wherein, the circumference side of the plate body 1412 is connected with the inner wall of the housing 1410, dividing the cavity formed by the housing 1410 into an acoustic cavity 1431 and a first cavity 1440. The acoustic-to-electric converter 1420 is coupled to the asic 1450 and is housed in a first cavity 1440. In addition, the plate body 1412 is further provided with an acoustic inlet 1421, and the acoustic inlet 1421 can be acoustically connected with the acoustic cavity 1431 and the acoustic-electric converter 1420, and transmit the acoustic signal adjusted by the acoustic structure 1430 to the acoustic-electric converter 1420, and the acoustic-electric converter 1420 can pick up the acoustic signal and convert the acoustic signal into an electrical signal.

Acoustic cavity 1431 may be included as part of acoustic structure 1430. As shown in fig. 14, the acoustic chamber 1431 and the first chamber 1440 are located on both sides of the plate 1412, respectively. Wherein chamber wall 1411, a portion of housing 1410, and plate 1412 enclose an acoustic chamber 1431. In addition, the cavity wall 1411 is further provided with an acoustic pipe 1432, and the acoustic pipe 1432 can acoustically communicate the acoustic cavity 1431 with the outside of the microphone 1400. External sound signals may be transmitted to the acoustic chamber 1431 through the sound guide tube 1432.

Fig. 15 is a schematic diagram of an exemplary microphone shown in accordance with some embodiments of the present description. As shown in fig. 15, microphone 1500 may include a housing 1510, an acoustic structure 1530, an acoustic-to-electrical converter 1520, and an application specific integrated circuit 1550.

One or more elements of the microphone 1500 shown in fig. 15 may be the same or similar to one or more elements of the microphone 1400 shown in fig. 14. For example, the housing 1510, the acoustic-to-electric converter 1520, the acoustic structure 1530, the sound guide 1532, the application specific integrated circuit 1550, etc. in the microphone 1500 may be the same as or similar to the housing 1410, the acoustic-to-electric converter 1420, the acoustic structure 1430, the sound guide 1432, the application specific integrated circuit 1450, etc. in the microphone 1400, respectively. Unlike microphone 1400, the acoustic-to-electrical converter 1520 and/or the application specific integrated circuit 1550 of microphone 1500 can be located in the acoustic cavity 1531 of the acoustic structure 1530.

In some embodiments, acoustic structure 1530 may be in direct acoustic communication with acoustic-to-electric converter 1520. The direct acoustic communication of acoustic structure 1530 and acoustic to electrical converter 1520 can be understood as: the acoustic-to-electrical converter 1520 may include a "front cavity" and a "back cavity," and the acoustic signals in the "front cavity" or the "back cavity" may cause a change in one or more parameters of the acoustic-to-electrical converter 1520. Illustratively, in the microphone 1400 shown in fig. 14, an acoustic signal passes through an acoustic structure 1430 (e.g., a sound guide 1432 and an acoustic cavity 1431) and then through an acoustic port 1421 of the acoustic-to-electric converter 1420 to a "back cavity" of the acoustic-to-electric converter 1420, causing a change in one or more parameters of the acoustic-to-electric converter 1420. In another example, as in the microphone 1500 shown in fig. 15, the first cavity 1540 formed by the housing 1510 may be considered to coincide with the acoustic cavity 1531 of the acoustic structure 1530, the "front cavity" of the acoustic-to-electrical converter 1520 coincides with the acoustic cavity 1531 of the acoustic structure, and the sound signal passes through the acoustic structure 1530 to directly cause a change in one or more parameters of the acoustic-to-electrical converter 1520.

Fig. 16 is a schematic diagram of a frequency response curve of an exemplary microphone shown in accordance with some embodiments of the present description. As shown in fig. 16, the frequency response curve 1610 is the acousto-electric conversionThe frequency response curve of the transducer (e.g., the electroacoustic transducer 1420), the frequency response curve 1620 is the frequency response curve of the acoustic structure (e.g., the acoustic structure 1430), and the frequency response curve 1630 is the frequency response curve of the microphone (e.g., the microphone 1400). At frequency f ₂ Where the electroacoustic transducer resonates with the sound signal it receives so as to contain the frequency f ₂ Frequency response curve 1610 at frequency f ₂ Having a resonance peak at the frequency f ₂ May be referred to as the resonant frequency (i.e., the second resonant frequency) of the acousto-electric transducer. At frequency f ₁ Where the acoustic structure resonates with the received sound signal so as to contain the frequency f ₁ Frequency response curve 1620 at frequency f ₁ With resonance peak, frequency f ₁ May be referred to as the resonant frequency (i.e., the first resonant frequency) of the acoustic structure.

In some embodiments, it is desirable to control the range of the first resonant frequency and/or the second resonant frequency so that the sound signal emitted by the user can be received within the frequency range of the human voice. In some embodiments, the first resonant frequency and/or the second resonant frequency may range from 10Hz to 20000Hz. In some embodiments, the first resonant frequency and/or the second resonant frequency may range from 20Hz to 20000Hz. In some embodiments, the first resonant frequency and/or the second resonant frequency may range from 50Hz to 20000Hz. In some embodiments, the first resonant frequency and/or the second resonant frequency may range from 100Hz to 12000Hz.

In some embodiments, the first resonant frequency may be related to a structural parameter of the acoustic structure. The resonant frequency of the acoustic structure can be expressed as formula (8):

wherein f represents the resonant frequency of the acoustic structure, c ₀ Represents the sound velocity in the air, S represents the cross-sectional area of the sound guide tube, l represents the length of the sound guide tube, and V represents the volume of the acoustic cavity.

As can be seen from equation (8), the resonant frequency of the acoustic structure is related to the cross-sectional area of the sound guide tube in the acoustic structure, the length of the sound guide tube, and the volume of the acoustic cavity. Illustratively, the resonant frequency of the acoustic structure is positively correlated with the cross-sectional area of the sound guide tube, negatively correlated with the length of the sound guide tube and/or the volume of the acoustic cavity. In some embodiments, the resonant frequency of the acoustic structure may be adjusted by setting structural parameters of the acoustic structure, such as the shape of the sound guide tube, the size of the sound guide tube, the volume of the acoustic cavity, or the like, or a combination thereof. For example, in the case where the length of the sound guide tube and the volume of the acoustic cavity are unchanged, the resonance frequency of the acoustic structure can be reduced by reducing the aperture of the sound guide tube to reduce the cross-sectional area of the sound guide tube. For another example, in the case where the cross-sectional area of the sound guide tube and the length of the sound guide tube are unchanged, the resonance frequency of the acoustic structure can be increased by reducing the volume of the acoustic cavity. For another example, in the case where the cross-sectional area and the length of the sound guide tube are unchanged, the resonance frequency of the acoustic structure can be reduced by increasing the volume of the acoustic cavity.

In some embodiments, the resonant frequency of the acoustic-to-electric converter may be related to a structural parameter of the acoustic-to-electric converter. The structural parameters of the acoustic-to-electric converter may include the type of acoustic-to-electric converter, the material of the acoustic-to-electric converter, the size of the acoustic-to-electric converter, the arrangement of the acoustic-to-electric converter, etc., or a combination thereof. By way of example only, the description will be given taking the acoustic-to-electric converter as a rectangular cantilever structure. In some embodiments, the resonant frequency of the acoustic-to-electrical converter is inversely related to the length of the cantilever structure with the other parameters (e.g., width, thickness, material) being the same.

In some embodiments, the resonant frequency of the acoustic-electric converter and/or the resonant frequency of the acoustic structure may be adjusted by adjusting structural parameters of the acoustic-electric converter and/or the acoustic structure, thereby obtaining an ideal resonant frequency of the acoustic-electric converter and/or the acoustic structure, and thus obtaining an ideal frequency response curve of the microphone.

In some embodiments, to increase the microphone at the first resonant frequency f ₁ And/or a second resonant frequency f ₂ Responsive to sound signalsSensitivity, structural parameters of the acoustic structure may be set such that the first resonant frequency f ₁ With a second resonant frequency f ₂ The absolute value of the difference of (c) may be not greater than the set threshold. In some embodiments, a first resonant frequency f ₁ With a second resonant frequency f ₂ The absolute value of the difference of (c) may be not greater than 1000Hz. In some embodiments, a first resonant frequency f ₁ With a second resonant frequency f ₂ The absolute value of the difference of (c) may be less than 1000Hz. In some embodiments, a first resonant frequency f ₁ With a second resonant frequency f ₂ The absolute value of the difference of (c) may be less than 800Hz. In some embodiments, a first resonant frequency f ₁ With a second resonant frequency f ₂ The absolute value of the difference of (c) may range between 100Hz and 200 Hz. In some embodiments, a first resonant frequency f ₁ With a second resonant frequency f ₂ The absolute value of the difference of (c) may range between 0Hz and 100 Hz. In some embodiments, a first resonant frequency f ₁ With a second resonant frequency f ₂ The absolute value of the difference of (a) may be 0, i.e. the first resonant frequency f ₁ With a second resonant frequency f ₂ Is the same as that of (a). In some embodiments, the first resonant frequency f may be made by setting structural parameters of the acoustic structure and/or the electroacoustic transducer ₁ And a second resonant frequency f ₂ The absolute value of the difference is relatively small. In this case, the sound signal is at a first resonant frequency f ₁ Is resonated with the sound signal and includes a first resonant frequency f ₁ Frequency components within a certain frequency band of (a) are amplified. The acoustic-electric converter is at the second resonant frequency f ₂ Is resonated with the sound signal so as to include the second resonant frequency f ₂ Is amplified due to the first resonant frequency f of the acoustic structure ₁ Second resonant frequency f of the electroacoustic transducer ₂ The absolute value of the difference of (a) is relatively small (e.g., less than 1000 Hz) such that the first resonant frequency f ₁ Frequency components in the vicinity and/or a second resonance frequency f ₂ The nearby frequency components may be "amplified" so that the microphone may have two high Q resonant peaks, e.g., the resonant peaks in FIG. 16, without increasing the volume of the microphone1631 and a resonance peak 1632. In some embodiments, the microphone is at a first resonant frequency f ₁ The sensitivity at this point may be greater than the acoustic-to-electric converter at the first harmonic frequency f ₁ The sensitivity at this point, as shown in fig. 16, the difference between the two can be represented by Δv1. In some embodiments, the microphone is at a second resonant frequency f ₂ The sensitivity at this point may be greater than the acoustic-to-electric converter at the second resonant frequency f ₂ The sensitivity at this point, as shown in FIG. 16, can be represented by DeltaV 2.

In some embodiments, the first resonant frequency f may be achieved by setting structural parameters of the acoustic structure and/or the acoustic-to-electrical converter such that ₁ With a second resonant frequency f ₂ Equal, i.e. first resonant frequency f ₁ With a second resonant frequency f ₂ The absolute value of the difference of (2) is 0Hz. For convenience of description, this embodiment is illustrated by taking fig. 17 as an example. Fig. 17 is a schematic diagram of a frequency response curve of an exemplary microphone shown in accordance with some embodiments of the present description. As shown in fig. 17, the frequency response curve 1710 is a frequency response curve of an acoustic-to-electric converter (e.g., the acoustic-to-electric converter 1420), and the frequency response curve 1720 is a frequency response curve of a microphone (e.g., the microphone 1400) provided with an acoustic structure (e.g., the acoustic structure 1430). In some embodiments, the acoustic signal is at a first resonant frequency f ₁ Is resonated with the sound signal and includes a first resonant frequency f ₁ Frequency components within a certain frequency band of (a) are amplified. The acoustic-electric converter is at the second resonant frequency f ₂ Is resonated with the sound signal so as to include the second resonant frequency f ₂ Is amplified due to the first resonant frequency f of the acoustic structure ₁ Second resonant frequency f of the electroacoustic transducer ₂ Equal to the first resonant frequency f ₁ Frequency components in the vicinity and/or a second resonance frequency f ₂ The nearby frequency components can be "amplified" twice, so that the microphone can be improved at the first resonant frequency f without increasing the volume of the microphone ₁ Second resonant frequency f ₂ Sensitivity and Q value in the vicinity. As shown in fig. 17, the microphone is at a first resonant frequency f ₁ Second resonant frequency f ₂ Sensitivity atThe rise value of (2) can be expressed as DeltaV 3.

In some embodiments, by providing an acoustic structure in the microphone, the sensitivity of the microphone in different resonance frequency ranges can be improved by 5dBV-60dBV compared to the sensitivity of the electroacoustic transducer. In some embodiments, by providing an acoustic structure in the microphone, the sensitivity of the microphone in the different resonant frequency ranges can be improved by 10dBV-40dBV. In some embodiments, the increase in sensitivity of the microphone may be different over different resonant frequency ranges. For example, the higher the resonance frequency, the greater the increase in sensitivity of the microphone in the corresponding frequency band range. In some embodiments, the increase in sensitivity of the microphone may be represented by a change in slope of sensitivity over a range of frequencies. In some embodiments, the slope of the sensitivity of the microphone over different resonant frequency ranges may range from 0.0005dBV/Hz to 0.05dBV/Hz. In some embodiments, the slope of the sensitivity of the microphone over different resonant frequency ranges may range from 0.001dBV/Hz to 0.03dBV/Hz. In some embodiments, the slope of the sensitivity of the microphone over different resonant frequency ranges may range from 0.002dBV/Hz to 0.04dBV/Hz.

Fig. 18 is a schematic diagram of an exemplary microphone shown in accordance with some embodiments of the present description. As shown in fig. 18, the microphone 1800 may include a housing 1810, at least one acoustic-to-electric transducer 1820, an acoustic port 1821, an acoustic structure 1830, a first cavity 1840, an application specific integrated circuit 1850, and a second acoustic structure 1870.

One or more components of the microphone 1800 may be the same as or similar to one or more components of the microphone 1400 shown in fig. 14. For example, the housing 1810, the first plate 1812, the at least one acousto-electric transducer 1820, the acoustic port 1821, the acoustic structure 1830, the first cavity 1840, etc. in the microphone 1800 may be the same as or similar to the housing 1410, the plate 1412, the at least one acousto-electric transducer 1420, the acoustic port 1421, the acoustic structure 1430, the first cavity 1440, the asic 1450, etc. in the microphone 1400, respectively. Microphone 1800 differs from microphone 1400 in that microphone 1800 may also include a second acoustic structure 1870.

In some embodiments, the microphone 1800 may include a first plate 1812 and a second plate 1813. The first plate 1812 and the second plate 1813 are sequentially disposed in the cavity formed by the housing 1810 from top to bottom. The perimeter sides of first plate 1812 and second plate 1813 may be coupled to the inner wall of housing 1810, thereby dividing the cavity formed by housing 1810 into first cavity 1840, acoustic cavity 1831, and second acoustic cavity 1871. Specifically, the first plate 1812 and at least a portion of the housing 1810 may constitute a first cavity 1840, which first cavity 1840 may be used to house at least a portion of the structure of the microphone 1800 (e.g., at least one acoustic-to-electric transducer 1820, an application specific integrated circuit 1850, etc.). At least a portion of the first plate 1812, the second plate 1813, and the housing 1810 may define or form an acoustic cavity 1831, with the acoustic cavity 1831 being part of the structure of the acoustic structure 1830. At least a portion of second plate 1813 and housing 1810 may define or form second acoustic cavity 1871, second acoustic cavity 1871 being part of the structure of second acoustic structure 1870.

In some embodiments, second acoustic structure 1870 can be disposed in series, parallel, or in other suitable manner with acoustic structure 1830. As shown in fig. 18, a second acoustic structure 1870 can be disposed in series with the acoustic structure 1830. The arrangement of the second acoustic structure 1870 and the acoustic structure 1830 in series means that the second acoustic cavity 1871 of the second acoustic structure 1870 may be in acoustic communication with the acoustic cavity 1831 of the acoustic structure 1830 through the acoustic pipe 1832 of the acoustic structure 1830. In some embodiments, the acoustic pipe 1832 of the acoustic structure 1830 may be positioned on the second plate 1813 and the acoustic cavity 1831 may be in acoustic communication with the second acoustic cavity 1871 of the second acoustic structure 1870 through the acoustic pipe 1832. In some embodiments, the second acoustic pipe 1872 of the second acoustic structure 1870 may be disposed on the cavity wall 1811 that forms the second acoustic cavity 1871. The second acoustic cavity 1871 of the second acoustic structure 1870 is in acoustic communication with the exterior of the microphone 1800 through a second acoustic pipe 1872. In some embodiments, the acoustic port 1821 may be disposed on the first plate 1812. The acoustic structure 1830 may be in acoustic communication with the acoustic-to-electric converter 1820 through the acoustic port 1821. The acoustic communication of component a with component B means that an acoustic signal can be transmitted through component a to component B. For example, acoustic communication of the second acoustic cavity 1871 with the acoustic cavity 1831 through the acoustic pipe 1832 means that sound signals may be transferred from the second acoustic cavity 1871 to the acoustic cavity 1831 through the acoustic pipe 1832. As another example, the second acoustic cavity 1871 being in acoustic communication with the exterior of the microphone 1800 through the second acoustic pipe 1872 means that sound signals can enter the acoustic cavity 1871 through the second acoustic pipe 1872. As another example, acoustic structure 1830 may be in acoustic communication with acoustic-to-electric converter 1820 through acoustic port 1821, meaning that acoustic signals may be transferred from acoustic structure 1830 to acoustic-to-electric converter 1820 through acoustic port 1821. Reference may be made to fig. 20-22 and their associated description as to the arrangement of the connection means of the acoustic structures.

In some embodiments, the external sound signal picked up by the microphone 1800 may be conditioned (e.g., filtered, amplified, etc.) by the second acoustic structure 1870 and then transmitted to the acoustic structure 1830 through the sound guide tube 1832, the acoustic structure 1830 again conditions (e.g., filters, amplifies, etc.) the sound signal, the secondarily conditioned sound signal further enters the acoustic-to-electric converter 1820 through the sound inlet 1821, and the acoustic-to-electric converter 1820 may generate an electrical signal corresponding to the sound signal.

In some embodiments, the structural parameters of second acoustic structure 1870 may be the same or different than the structural parameters of acoustic structure 1830. For example, the second acoustic structure 1870 may be cylindrical in shape and the acoustic structure 1830 may be cylindrical in shape. For another example, the roughness of the inner wall of the second sound guide tube 1872 of the second acoustic structure 1870 may be the same as or different from the roughness of the inner wall of the sound guide tube 1832 of the acoustic structure 1830. For another example, the tube diameter of the second sound guide tube 1872 of the second acoustic structure 1870 may be the same as or different from the tube diameter of the sound guide tube 1832 of the acoustic structure 1830. As another example, the dimensions (e.g., length, width, depth, etc.) of the second acoustic cavity 1871 of the second acoustic structure 1870 may be the same as or different from the dimensions of the acoustic cavity 1831 of the acoustic structure 1830.

In some embodiments, the resonant frequency (which may also be referred to as a third resonant frequency) of the second acoustic structure 1870 may be within a range. The frequency component of the acoustic signal at the third resonant frequency resonates such that the second acoustic structure 1870 can amplify frequency components in the acoustic signal near the third resonant frequency. The acoustic structure 1830 may have a first resonant frequency at which frequency components of the sound signal amplified by the second acoustic structure 1870 resonate such that the acoustic structure 1830 may continue to amplify frequency components of the sound signal near the first resonant frequency. In consideration of that a specific acoustic structure has a good amplifying effect on only sound components in a specific frequency range, for convenience of understanding, a sound signal amplified by one acoustic structure may be regarded as a sub-band sound signal at a corresponding resonance frequency of the acoustic structure. For example, the sound amplified via the second acoustic structure 1870 described above may be considered a sub-band sound signal at a third resonant frequency, and a sound signal that continues to be amplified via the acoustic structure 1830 may result in another sub-band sound signal at the first resonant frequency. The amplified sound signal is transmitted to the acoustic-to-electric converter 1820, thereby generating a corresponding electrical signal. In this way, the acoustic structure 1830 and the second acoustic structure 1870 may increase the Q-value of the microphone 1800 in the frequency band including the first resonant frequency and the third resonant frequency, respectively, thereby increasing the sensitivity of the microphone 1800. In some embodiments, the increase in sensitivity of the microphone 1800 (relative to the acoustic transducer) may be the same or different at different resonant frequencies. For example, when the third resonant frequency is greater than the first resonant frequency, the sensitivity of the microphone 1800 response at the third resonant frequency is greater than the sensitivity of the microphone 1800 response at the first resonant frequency. In some embodiments, the resonant frequency of second acoustic structure 1870 and/or acoustic structure 1830 may be adjusted by adjusting a structural parameter of second acoustic structure 1870 and/or acoustic structure 1830. In some embodiments, the first resonant frequency corresponding to the acoustic structure 1830 and the third resonant frequency corresponding to the second acoustic structure 1870 may be set according to practical situations. For example, the first and third resonance frequencies may be less than the second resonance frequency, so that the sensitivity of the microphone 1800 in the middle-low frequency band may be improved. For another example, the absolute value of the difference between the first and third resonant frequencies may be less than a frequency threshold (e.g., 100Hz, 200Hz, 1000Hz, etc.), so that the sensitivity and Q-value of the microphone 1800 may be improved over a range of frequencies. For another example, the first resonant frequency may be greater than the second resonant frequency, and the third resonant frequency may be less than the second resonant frequency, so that the frequency response curve of the microphone 1800 may be flatter, and the sensitivity of the microphone 1800 in a wider frequency band may be improved. For more details on the frequency response of the microphone 1800, reference is made to fig. 19 and its associated description.

The above description of the microphone 1800 is for illustrative purposes only and is not intended to limit the scope of the present description. Various changes and modifications may be made by one of ordinary skill in the art in light of the description herein. In some embodiments, the microphone 1800 may include multiple acoustic structures (e.g., 3, 5, 11, 14, 64, etc.). In some embodiments, the acoustic structures in the microphone may be connected in series, parallel, or a combination thereof. In some embodiments, the magnitudes of the first resonant frequency, the second resonant frequency, and the third resonant frequency may be adjusted according to actual needs. For example, the first resonant frequency and/or the third resonant frequency may be less than, equal to, or greater than the second resonant frequency. For another example, the first resonant frequency may be less than, equal to, or greater than the third resonant frequency. Such variations and modifications are intended to be within the scope of the present description.

Fig. 19 is a schematic diagram of a frequency response curve of an exemplary microphone shown in accordance with some embodiments of the present description. As shown in fig. 19, frequency response curve 1910 is a frequency response curve of an acoustic-to-electric converter (e.g., acoustic-to-electric converter 1820), frequency response curve 1920 is a frequency response curve of an acoustic structure (e.g., acoustic structure 1830), frequency response curve 1930 is a frequency response curve of a second acoustic structure (e.g., second acoustic structure 1870), and frequency response curve 1940 is a frequency response curve of a microphone (e.g., microphone 1800).

Frequency response curve 1910 at frequency f ₂ Having a resonance peak at the frequency f ₂ May be referred to as the resonant frequency (may also be referred to as the second resonant frequency) of the acousto-electric transducer. Frequency f at frequency response curve 1920 ₁ Where the acoustic structure resonates with the received sound signal so as to contain the frequency f ₁ Frequency response curve 1920 at frequency f ₁ With a resonance peak at it. Frequency f of sounding resonance ₁ May be referred to as the resonant frequency (also referred to as the first resonant frequency) of the acoustic structure. Frequency f at frequency response curve 1930 ₃ Where the second acoustic structure resonates with the received sound signal so as to include a frequency f ₃ Frequency response curve 1930 at frequency f ₃ At which there is a resonance peak, frequency f of sounding resonance ₃ May be referred to as a resonant frequency (also may be referred to as a third resonant frequency) of the second acoustic structure.

In some embodiments, multiple (e.g., 2, 3, 5, 8, 11, 16, etc.) acoustic structures may be provided, and the frequency response curves of the multiple acoustic structures may have resonant peaks at the same or different frequencies, such that the frequency response curve 1940 of the microphone may have multiple resonant peaks at different frequencies based on the resonant peaks of the frequency response curve of the acoustic-to-electrical converter. In some embodiments, by selecting and/or adjusting the resonant frequencies of the plurality of acoustic structures, a desired or ideal frequency response curve for the microphone may be obtained. For example, a first resonant frequency f ₁ And a third resonant frequency f ₃ May be smaller than the second resonant frequency f ₂ Thereby improving the sensitivity of the microphone in the middle and low frequency bands. Also for example, a first resonant frequency f ₁ And a third resonant frequency f ₃ May be greater than the second resonant frequency f ₂ Thereby improving the sensitivity of the microphone in the middle-high frequency band. Also for example, a first resonant frequency f ₁ And/or a third resonant frequency f ₃ With a second resonant frequency f ₂ The absolute value of the difference of (a) may be less than a frequency threshold (e.g., 100Hz, 200Hz, 500Hz, 1000Hz, etc.), such that the microphone may be made to be at a first resonant frequency f ₁ Second resonant frequency f ₂ And/or a third resonant frequency f ₃ The sensitivity and Q value are improved. That is, the microphone is at the first resonant frequency f ₁ The sensitivity of the response may be greater than that of the acoustic structure atA resonant frequency f ₁ Sensitivity of the response at the second resonant frequency f of the microphone ₂ The sensitivity of the response can be greater than that of the electroacoustic transducer at the second resonant frequency f ₂ Sensitivity of the response, and/or microphone at the third resonant frequency f ₃ The sensitivity of the response may be greater than that of the second acoustic structure at the third resonant frequency f ₃ The sensitivity of the response, in turn, may be such that the microphone has multiple (e.g., 3 in fig. 19) high Q resonant peaks. Also for example, a second resonant frequency f ₂ May be greater than the first resonant frequency f ₁ Third resonant frequency f ₃ May be smaller than the first resonant frequency f ₁ Therefore, the frequency response curve of the microphone can be flatter, and the sensitivity of the microphone in a wider frequency band is improved. In some embodiments, at least two of the third resonant frequency, the first resonant frequency, and the second resonant frequency may be the same. For example, a second resonant frequency f ₂ Third resonant frequency f ₃ With a first resonant frequency f ₁ Equal. In this case, the second acoustic structure is at a third resonant frequency f ₃ Is resonated with the sound signal so as to include a third resonant frequency f ₃ Is amplified. The acoustic structure is at a first resonant frequency f ₁ At resonance of the acoustic signal so as to contain a first resonance frequency f ₁ Is amplified. The acoustic-electric converter is at the second resonant frequency f ₂ Is resonated with the sound signal so as to include the second resonant frequency f ₂ Is amplified. Due to the second resonant frequency f ₂ Third resonant frequency f ₃ With a first resonant frequency f ₁ And therefore, the sound signals can be amplified three times in the microphone, so that the Q value and the sensitivity of the microphone are improved.

FIG. 20 is a schematic diagram of an exemplary microphone shown in accordance with some embodiments of the present description; fig. 21 is a schematic diagram of an exemplary microphone shown in accordance with some embodiments of the present description. As shown in fig. 20, the microphone 2000 may include a case 2010, at least one acoustic-to-electric converter 2020, an acoustic structure 2030, a second acoustic structure 2070, and a third acoustic structure 2080. Wherein acoustic structure 2030 may include a sound guide 2031 and an acoustic cavity 2032, second acoustic structure 2070 may include a second sound guide 2071 and a second acoustic cavity 2072, and third acoustic structure 2080 may include a third sound guide 2081, a fourth sound guide 2082, and a third acoustic cavity 2083.

One or more components in the microphone 2000 may be the same as or similar to one or more components in the microphone 1800 shown in fig. 18. For example, the housing 2010, the at least one acoustic-to-electric converter 2020, the acoustic port 2021, the first cavity 2040, etc. in the microphone 2000 are the same as or similar to the housing 1810, the at least one acoustic-to-electric converter 1820, the acoustic port 1821, the first cavity 1840, etc. in the microphone 1800, respectively.

In some embodiments, the microphone 2000 may include a first plate 2012, a second plate 2013, and a third plate 2014. The first plate 2012 and the second plate 2013 may be disposed in the cavity formed by the housing 2010 from top to bottom. The first plate 2012 may be physically connected to the second plate 2013 and the housing. The peripheral sides of the second and

third plates

2013 and 2014 may be connected to the inner wall of the case 2010. In some embodiments, at least a portion of the first plate 2012 and the housing 2010 may define or form a first cavity 2040.

In some embodiments, a spacer 2015 of the microphone 2000 is disposed between the second plate 2013 and the third plate 2014, separating a space between the second plate 2013 and the third plate 2014.

In some embodiments, at least a portion of the first plate 2012 and the housing 2010 may define or form a first cavity 2040. In some embodiments, at least a portion of the first plate 2012, the second plate 2013, and the housing 2010 may define or form a third acoustic cavity 2083. In some embodiments, the second plate 2013, the third plate 2014, at least a portion of the housing, and the spacer 2015 may define or form an acoustic cavity 2032. In some embodiments, the second plate 2013, the third plate 2014, at least a portion of the housing, and the separator 2015 may define or form a second acoustic cavity 2072. The third plate 2014 may serve as a cavity wall 811 of the second acoustic cavity 2072 and the third acoustic cavity 2032, and the second sound guide 2071 and the sound guide 2031 may be opened on the cavity wall 2011.

In some embodiments, the acoustic port 2021 of the microphone 2000 may be disposed on the first plate 2012, and the third acoustic cavity 2083 of the third acoustic structure 2080 may be in acoustic communication with the acoustic-to-electric converter 2020 through the acoustic port 2021. In some embodiments, the third acoustic pipe 2081 and the fourth acoustic pipe 2082 of the third acoustic structure 2080 may be disposed on the second plate 2013, the acoustic cavity 2032 of the acoustic structure 2030 may be in acoustic communication with the third acoustic cavity 2083 of the third acoustic structure 2080 through the third acoustic pipe 2081, and the second acoustic cavity 2072 of the second acoustic structure 2070 may be in acoustic communication with the third acoustic cavity 2083 through the fourth acoustic pipe 2082.

In some embodiments, the resonant frequency of acoustic structure 2030 may be referred to as a first resonant frequency, the resonant frequency of acoustic-to-electrical converter 2020 may be referred to as a second resonant frequency, the resonant frequency of second acoustic structure 2070 may be referred to as a third resonant frequency, and the resonant frequency of third acoustic structure 2080 may be referred to as a fourth resonant frequency. In some embodiments, the first resonant frequency, the third resonant frequency, and/or the fourth resonant frequency may be the same as or different from the second resonant frequency. For example, the absolute values of the differences of the first, third, fourth, and second resonant frequencies from each other may be greater than a frequency threshold (e.g., 100Hz, 200Hz, 500Hz, 1000Hz, etc.). As another example, the absolute values of the differences of the first, third, fourth, and second resonant frequencies from each other may be less than a frequency threshold (e.g., 100Hz, 200Hz, 500Hz, 1000Hz, etc.). In some embodiments, at least two of the third resonant frequency, the fourth resonant frequency, and the second resonant frequency may be the same. For example, a second resonant frequency f ₂ Third resonant frequency f ₃ Can be at the fourth resonant frequency f ₄ Equal. In this case, the second acoustic structure is at a third resonant frequency f ₃ At the resonance of the sound signal so as to contain a third resonance frequency f ₃ Is amplified. The third acoustic structure is at the fourth resonant frequency f ₄ Location and sound signalGenerating resonance so as to include a fourth resonance frequency f ₄ Is amplified. The acoustic-electric converter is at the second resonant frequency f ₂ Is resonated with the sound signal so as to include the second resonant frequency f ₂ Is amplified. Due to the second resonant frequency f ₂ Third resonant frequency f ₃ Can be at the fourth resonant frequency f ₄ And therefore, the sound signals can be amplified three times in the microphone, so that the Q value and the sensitivity of the microphone are improved.

When the microphone 2000 is used for sound signal processing, sound signals can enter the acoustic cavity 2032 of the acoustic structure 2030 and the second acoustic cavity 2072 of the second acoustic structure 2070 through the sound guide tube 2031 and the second sound guide tube 2071, respectively. The acoustic structure 2030 may condition the acoustic signal such that frequency components of the acoustic signal at the first resonant frequency resonate such that the acoustic structure 2030 amplifies frequency components of the acoustic signal near the first resonant frequency. Similarly, the second acoustic structure 2070 may process the sound signal, and the frequency component of the sound signal at the third resonant frequency may resonate such that the second acoustic structure 2070 may amplify the frequency component of the sound signal near the third resonant frequency. The sound signals conditioned by acoustic structure 2030 and second acoustic structure 2070 may enter third acoustic chamber 2083 through third sound guide 2081 and fourth sound guide 2082, respectively. Third acoustic structure 2080 may continue to condition the acoustic signal such that the frequency content of the acoustic signal at the fourth resonant frequency resonates such that third acoustic structure 2080 may amplify the frequency content of the acoustic signal near the fourth resonant frequency. The sound signal conditioned by the acoustic structure 2030, the second acoustic structure 2070, and the third acoustic structure 2080 may be transmitted to the acoustic-to-electric converter 2020 through the sound inlet 2021 of the acoustic-to-electric converter 2020. The acoustic-to-electrical converter 2020 may generate an electrical signal from the conditioned acoustic signal.

Note that the acoustic structures included in the microphone 2000 are not limited to the acoustic structure 2030, the second acoustic structure 2070, and the third acoustic structure 2080 shown in fig. 20, and the number of acoustic structures included in the microphone 2000, the structural parameters of the acoustic structures, the number of acoustic structures, the connection manner of the acoustic structures, and the like may be set according to actual needs (e.g., a desired or/and ideal resonance frequency, sensitivity, and the like). Fig. 21 shows a schematic structural diagram of another microphone 2100. Unlike the microphone 2000 of fig. 20, the microphone 2100 includes a greater number of acoustic structures. As shown in fig. 21, the microphone 2100 includes a housing 2110, an acoustic-to-electric converter 2120, a first plate 2112, and several acoustic structures. The acoustic-to-electric converter 2120 is housed in a first chamber 2140 constituted of the housing 2110 and the first plate 2112, and is in acoustic communication with the outside through the acoustic port 2121. Several acoustic structures include acoustic structure 2131, acoustic structure 2132, acoustic structure 2133, acoustic structure 2134, acoustic structure 2135, acoustic structure 2136, and acoustic structure 2137. Wherein acoustic structure 2137 includes an acoustic cavity 21373 and 6 sound pipes in communication with acoustic structures 2131, 2132, 2133, 2134, 2135, 2136, respectively. The acoustic cavity 21373 of the acoustic structure 2137 is in acoustic communication with the first cavity 2140 through the acoustic port 2121. The processing of the microphone 2100 components and the sound signals may refer to the microphone 1800 in fig. 18 and the microphone 2000 in fig. 20, and will not be described again here.

Fig. 22 is a schematic diagram of an exemplary microphone shown in accordance with some embodiments of the present description. As shown in fig. 22, the microphone 2200 may include a case 2210, an acoustic-to-electric converter 2220, an acoustic structure 2230, and a first cavity 2240. In some embodiments, the microphone 2200 may include a first plate 2211, and the first plate 2211 may be positioned in a space formed by the housing 2210. In some embodiments, the perimeter side of the first plate 2211 may be connected with an inner wall of the housing 2210, thereby separating the space formed by the housing 2210 into an acoustic cavity (e.g., the second acoustic subchamber 22322 of the second acoustic substructure 2232) and a first cavity 2240. The first cavity 2240 may be used to house the acoustic-to-electric converter 2220 as well as the asic 2250. In some embodiments, the acoustic-to-electrical converter 2220 may include a plurality of acoustic-to-electrical converters, for example, a first acoustic-to-electrical converter 2221, a second acoustic-to-electrical converter 2222, a third acoustic-to-electrical converter 2223, a fourth acoustic-to-electrical converter 2223, a fifth acoustic-to-electrical converter 2225, and a sixth acoustic-to-electrical converter 2226. In some embodiments, the acoustic structure 2230 may include a plurality of acoustic substructures, e.g., a first acoustic substructures 2231, a second acoustic substructures 2232, a third acoustic substructures 2233, a fourth acoustic substructures 2234, a fifth acoustic substructures 2235, and a sixth acoustic substructures 2236. In some embodiments, each sub-acoustic structure in the microphone 2200 corresponds to one of the acoustic-to-electrical converters one to one, i.e., one acoustic sub-structure corresponds to one of the acoustic-to-electrical converters. For example, the first acoustic substructure 2231 is in acoustic communication with the first acoustic transducer 2221 through a first sub-acoustic port on the first plate 2211 of the microphone 2200, the second acoustic substructure 2232 is in acoustic communication with the second acoustic transducer 2222 through a second sub-acoustic port on the first plate 2211, the third acoustic substructure 2233 is in acoustic communication with the third acoustic transducer 2223 through a third sub-acoustic port on the first plate 2211, the fourth acoustic substructure 2234 is in acoustic communication with the fourth acoustic transducer 2224 through a fourth sub-acoustic port on the first plate 2211, the fifth acoustic substructure 2235 is in acoustic communication with the fifth acoustic transducer 2225 through a fifth sub-acoustic port on the first plate 2211, and the sixth acoustic substructure 2236 is in acoustic communication with the sixth acoustic transducer 2226 through a sixth sub-acoustic port on the first plate 2211. For convenience of description, the second acoustic substructure 2232 is illustrated as an example, and the second acoustic substructure 2232 includes a second sound guide 22321 and a second acoustic subchamber 22322. The second acoustic substructure 2232 is in acoustic communication with the exterior of the microphone 2200 through a second sound guide sub-tube 22321 for receiving sound signals. The second acoustic subchamber 22322 of the second acoustic substructure 2232 is in acoustic communication with the second acoustic transducer 2222 through a second sub-acoustic inlet 2212 on the first plate 2211. In some embodiments, each sub-acoustic structure may be combined with a corresponding one of the acoustic-to-electric converters, e.g., the first acoustic sub-structure 2331 is in acoustic communication with the acoustic-to-electric converter 2321 through a first sub-acoustic inlet on the first plate 2311 of the microphone 2300. Each acoustic substructure would deliver the amplified sound signal to a corresponding acousto-electric transducer, and finally each acousto-electric transducer would convert the received sound signal to an electrical signal and input to asic 2250 for processing.

In some embodiments, all of the acoustic substructures in the microphone may correspond to one acoustic transducer. For example, the sound pipes of the first, second, third, fourth, fifth, and sixth acoustic substructures 2231, 2232, 2233, 2234, 2235, 2236, respectively, may be in acoustic communication with the exterior of the microphone 2200, and the acoustic subchambers thereof may be in acoustic communication with the acoustic transducer. For another example, the microphone 2200 may include a plurality of acoustic-to-electrical converters, and a first acoustic substructure 2231, a second acoustic substructure 2232, a third acoustic substructure 2233, a fourth acoustic substructure 2234, a fifth acoustic substructure 2235, and a sixth acoustic substructure 2236 may be in acoustic communication with one of the plurality of acoustic converters, and another of the plurality of acoustic substructure may be in acoustic communication with another of the plurality of acoustic converters. For another example, the microphone 2200 may include a plurality of acoustic-to-electric transducers, and the acoustic subchamber of the first acoustic substructure 2231 may be in acoustic communication with the second acoustic subchamber 22322 of the second acoustic substructure 2232 through the second sound guide tube 22321 of the second acoustic substructure 2232. The second acoustic subchamber 22322 of the second acoustic substructure 2232 may be in acoustic communication with the third acoustic subchamber of the third acoustic substructure 2233 via a third sound duct of the third acoustic substructure 2233. The fourth acoustic substructure 2234 may be in acoustic communication with a fifth acoustic subchamber of the fifth acoustic substructure 2235 via a fifth sound guide of the fifth acoustic substructure 2235. The fifth acoustic subchamber of the fifth acoustic substructure 2235 may be in acoustic communication with the sixth acoustic subchamber 2262 of the sixth acoustic substructure via a sixth sub-acoustic duct of the sixth acoustic substructure 2236. The third acoustic subchamber of the third acoustic substructure 2233 and the sixth acoustic subchamber of the sixth acoustic substructure 2236 may be in acoustic communication with the same or different acoustic-to-electrical converters. Such variations are within the scope of the present application.

In some embodiments, each of the acoustic substructures 2230 may have a particular resonant frequency, and the sound signal conditioned by each of the acoustic substructures may be transmitted to an acoustic-to-electrical converter in acoustic communication with each of the acoustic substructures, which converts the received sound signal into an electrical signal. For example, the second acoustic substructure 2232 may have a third resonant frequency, and the second acoustic substructure 2232 may condition the sound signal such that a frequency component of the sound signal at the third resonant frequency resonates such that the second acoustic substructure 2232 may amplify a frequency component of the sound signal near the third resonant frequency. The sound signal conditioned by the second sound sub-structure 2232 can be transmitted to the second sound transducer 2222 through the second sound inlet 2212 in the first plate 2211.

In some embodiments, each of the acoustic-to-electric converters 2220 may have a specific resonant frequency, and each of the acoustic-to-electric converters may receive the sound signal adjusted by each of the acoustic substructures through a corresponding sound inlet, and convert a signal of a certain frequency range including the resonant frequency of each of the acoustic-to-electric converters in the sound signal into an electrical signal. For example, the second acoustic transducer 2222 may have a fifth resonant frequency, and the second acoustic transducer 2222 may receive the sound signal adjusted by the second acoustic substructure 2222 through the second sub-sound inlet 2212 and convert a signal in a certain frequency band range including the fifth resonant frequency in the sound signal into an electrical signal. In some embodiments, each of the electroacoustic transducers 2220 may have a different resonant frequency, so that signals in different frequency ranges in the acoustic signal may be respectively converted into corresponding electrical signals, so that the electrical signals output by the microphone have a wider frequency range, and the Q value and the sensitivity of the microphone in a wider frequency range are improved. For a method for adjusting the resonant frequency of the electroacoustic transducer, refer to the application entitled "a microphone" filed on the same date as the present application, and details thereof are not described herein.

In some embodiments, by providing one or more acoustic structures in the microphone. For example, the

acoustic structures

1830, 1870 in the

microphone

1800, 2030, 2070, 2080 in the microphone 2000 may increase the resonant frequency of the microphone, and may further increase the sensitivity of the microphone over a wider frequency band. In addition, by providing a connection manner of a plurality of acoustic structures and/or acoustic-to-electric converters, for example, each acoustic substructure in the microphone 2200 shown in fig. 22 is provided corresponding to one acoustic-to-electric converter, the sensitivity of the microphone 2200 in a wide frequency band can be improved.

Fig. 23 is a schematic diagram of a frequency response curve of an exemplary microphone shown in accordance with some embodiments of the present description. As shown in fig. 23, the frequency response curve 2310 may be a frequency response curve of a first acousto-electric transducer (e.g., the first acousto-electric transducer 2221), the frequency response curve 2320 is a frequency response curve of a first acoustic substructure (e.g., the first acoustic substructure 2231), the frequency response curve 2330 is a frequency response curve of a second acoustic substructure (e.g., the second acoustic substructure 2232), the frequency response curve 2340 is a frequency response curve of a second acoustic transducer (e.g., the second acoustic transducer 2222), and the frequency response curve 2350 is a frequency response curve of a microphone (e.g., the microphone 2200). The frequency response curve 2310 is at the second resonant frequency f ₂ Having a resonance peak at' that is, at a second resonance frequency f ₂ At' the second resonance frequency f is included in the sound signal due to resonance effect ₂ The' frequency components may be amplified in the electroacoustic transducer. At a first resonant frequency f of the frequency response curve 2320 ₁ The acoustic substructure resonates with the received sound signal so as to include a first resonant frequency f ₁ ' frequency band signal amplification. Third resonant frequency f at frequency response curve 2330 ₃ At' the second acoustic substructure 2232 resonates with the received sound signal so as to include a third resonant frequency f ₃ ' frequency band signal amplification. At a fourth resonant frequency f of the frequency response curve 2340 ₄ At' the fourth resonance frequency f is included in the sound signal due to resonance effect ₄ The frequency component of' may be amplified in the second acoustic transducer 2222.

In some embodiments, the resonant frequency of each acoustic substructure may be made different from the resonant frequency of the corresponding acoustic-to-electric converter to form a molecular band mic array. For example, as shown in fig. 23 and 24, the resonance frequency of the first acoustic-electric converter 2221 (i.e., the second resonanceFrequency f ₂ ') with the resonant frequency of the first acoustic substructure 2231 (i.e., the first resonant frequency f) ₁ ') are different; the resonant frequency of the second acoustic substructure 2232 (i.e., the third resonant frequency f ₃ ') and the resonance frequency of the second acoustic transducer 2222 (i.e., the fourth resonance frequency f ₄ ') are different, thus forming a molecular banding mic array.

In some embodiments, multiple acoustic-to-electric converters may be provided, e.g., first acoustic-to-electric converter 2221, second acoustic-to-electric converter 2222, etc., the frequency response curves of the multiple acoustic-to-electric converters may have resonance peaks at the same or different frequencies, such that the frequency response curve 2350 of the microphone may have multiple resonance peaks at different frequencies. In some embodiments, by selecting and/or adjusting the resonant frequencies of the plurality of acoustic-to-electric transducers, a desired or ideal frequency response profile for the microphone may be obtained. For example, a third resonant frequency f ₃ ' may be smaller than the fourth resonant frequency f ₄ ' thereby improving the sensitivity of the microphone in the middle and low frequency bands. The second acoustic substructure 2232 is at a third resonant frequency f ₃ Resonance with the sound signal at' so as to include a third resonance frequency f ₃ Signals within a certain frequency band of' are amplified. The second acoustic transducer 2222 is at a fourth resonant frequency f ₄ Resonance with the sound signal at' so as to include a fourth resonance frequency f ₄ Signals within a certain frequency band of' are amplified. The sound signal can be amplified twice in the microphone, thereby improving the Q value and sensitivity of the microphone.

In some embodiments, the absolute value of the difference between the resonant frequency of the acoustic substructure and the resonant frequency of its corresponding acousto-electric converter may be no greater than a set threshold. For convenience of description, the second acoustic substructure 2232 and the second acoustic transducer 2222 are described as examples. In some embodiments, a fourth resonant frequency f ₄ ' and third resonant frequency f ₃ The absolute value of the difference may be less than 1200Hz. In some embodiments, a fourth resonant frequency f ₄ ' and third resonant frequency f ₃ The absolute value of the difference may be less than 1000Hz. In some embodiments, a fourth resonant frequency f ₄ ' and third resonant frequency f ₃ The absolute value of the difference may be less than 800Hz. In some embodiments, a fourth resonant frequency f ₄ ' and third resonant frequency f ₃ The absolute value of the' difference value ranges from 100Hz to 1000Hz. In some embodiments, a fourth resonant frequency f ₄ ' and third resonant frequency f ₃ The absolute value of the' difference value ranges from 50Hz to 800Hz. In some embodiments, a fourth resonant frequency f ₄ ' and third resonant frequency f ₃ The absolute value of the' difference value ranges from 0Hz to 500Hz. In some embodiments, the resonant frequency of the acoustic substructure and the resonant frequency of its corresponding acousto-electric converter may be equal. For convenience of description, the second acoustic substructure 2232 and the second acoustic transducer 2222 are also described as examples. In some embodiments, the fourth resonant frequency f of the second acoustic transducer 2222 ₄ Third resonant frequency f of' and second acoustic substructure 2232 ₃ ' may be equal, i.e. the fourth resonant frequency f of the second acoustic transducer 2222 ₄ Third resonant frequency f of' and second acoustic substructure 2232 ₃ The absolute value of the' difference is 0, further increasing the microphone at the third resonant frequency f ₃ ' and/or fourth resonant frequency f ₄ Sensitivity to response to sound signals at'.

In some embodiments, a fourth resonant frequency f ₄ ' and third resonant frequency f ₃ The absolute value of the' difference may be less than a frequency threshold (e.g., 100Hz, 200Hz, 500Hz, 1000Hz, etc.), such that the microphone may be made to be at a fourth resonant frequency f ₄ ' and/or third resonant frequency f ₃ The sensitivity and Q at' are improved. That is, the microphone is at the third resonant frequency f ₃ The sensitivity of the response at' may be greater than the second acoustic substructure 2232 at the third resonant frequency f ₃ Sensitivity of the response at' microphone at fourth resonant frequency f ₄ The sensitivity of the response at' may be greater than the second acoustic transducer 2222 at the fourth resonant frequency f ₄ Sensitivity of response at'.

Fig. 24 is a schematic diagram of a frequency response curve of an exemplary microphone shown in accordance with some embodiments of the present application. As shown in fig. 24, the frequency response curves 2411, 2421, 2431, 2441, 2451, 2461 are frequency response curves of the acoustic-electric converters (for example, the first acoustic-electric converter 2221, the second acoustic-electric converter 2222, the third acoustic-electric converter 2223, the fourth acoustic-electric converter 2224, the fifth acoustic-electric converter 2225, and the sixth acoustic-electric converter 2226 shown in fig. 22, respectively). The frequency response curves 2412, 2422, 2432, 2442, 2452, 2462 are frequency response curves comprising one acoustic substructure combined with a corresponding acoustic-to-electrical converter, respectively (e.g., the first acoustic substructure 2231 combined with the first acoustic-to-electrical converter 2221, the second acoustic substructure 2232 combined with the second acoustic-to-electrical converter 2222, the third acoustic substructure 2233 combined with the third acoustic-to-electrical converter 2223, the fourth acoustic substructure 2234 combined with the fourth acoustic-to-electrical converter 2224, the fifth acoustic substructure 2235 combined with the fifth acoustic-to-electrical converter 2225, the sixth acoustic substructure 2236 combined with the sixth acoustic-to-electrical converter 2226 shown in fig. 22). The frequency response curve 2430 is the frequency response curve of a microphone (e.g., microphone 2200). As shown in fig. 24, the frequency response curve 2412 may be formed by superimposing the frequency response curve 2411 of the first acoustic-to-electric converter 2221 and a frequency response curve (not shown) of the first acoustic substructure 2231. Wherein the resonant frequency of the first acoustical to electrical converter 2221 is equal to the resonant frequency of the first acoustical substructure 2231. The frequency response curve 2422 may be a superposition of the frequency response curve 2421 of the second acoustic transducer 2222 and the frequency response curve (not shown) of the second acoustic substructure 2232. Wherein the resonant frequency of the second acoustic transducer 2222 is equal to the resonant frequency of the second acoustic substructure 2232. The frequency response curve 2432 may be a superposition of the frequency response curve 2431 of the third acoustic-to-electric converter 2223 and the frequency response curve (not shown) of the third acoustic substructure 2233. Wherein the resonant frequency of the third acoustical to electrical converter 2223 is equal to the resonant frequency of the third acoustical substructure 2233. The frequency response curve 2442 may be formed by superimposing the frequency response curve 2441 of the fourth acoustic transducer 2224 and a frequency response curve (not shown) of the fourth acoustic substructure 2234. Wherein the resonant frequency of the fourth acoustic transducer 2224 is equal to the resonant frequency of the fourth acoustic substructure 2234. The frequency response curve 2452 may be a superposition of the frequency response curve 2451 of the fifth acoustic electro-optical converter 2225 and the frequency response curve (not shown) of the fifth acoustic substructure 2235. Wherein the resonant frequency of the fifth acoustical to electrical converter 2225 is equal to the resonant frequency of the fifth acoustical substructure 2235. The frequency response curve 2462 may be a superposition of the frequency response curve 2461 of the sixth acoustic electrical converter 2226 and the frequency response curve (not shown) of the sixth acoustic substructure 2236. Wherein the resonant frequency of sixth acoustical to electrical converter 2226 is equal to the resonant frequency of sixth acoustical substructure 2236. The frequency response curve 2430 may be obtained by algorithmic synthesis of the frequency response curves 2412, 2422, 2432, 2442, 2452, 2462. In some embodiments, by placing the resonant frequencies of each of the electroacoustic transducers (or each of the acoustic substructures) in the microphone in different frequency ranges, the microphone may be made to have a greater output over a wider frequency range while also making the frequency response curve (e.g., frequency response curve 2430) of the microphone smoother.

In some embodiments, multiple acoustic-to-electric converters (e.g., the first acoustic-to-electric converter 2221, the second acoustic-to-electric converter 2222, the third acoustic-to-electric converter 2223, the fourth acoustic-to-electric converter 2224, the fifth acoustic-to-electric converter 2225, and the sixth acoustic-to-electric converter 2226 in fig. 22) may be disposed in the microphone, and the multiple acoustic-to-electric converters may have the same or different resonant frequencies, such that the multiple acoustic-to-electric converters respectively have resonant peaks in their corresponding frequency response curves, such that the frequency response curves of the microphone have multiple resonant peaks, thereby improving the output of the microphone over a wider frequency range. In some embodiments, to improve the sensitivity of the microphone to the response of the sound signal at the resonant frequency of the acoustic-to-electrical converter and/or the acoustic substructure, the structural parameters of the acoustic-to-electrical converter and the structural parameters of the acoustic substructure in acoustic communication with the acoustic-to-electrical converter may be set such that the absolute value of the difference in the resonant frequency of the acoustic-to-electrical converter and the resonant frequency of the acoustic substructure in acoustic communication with the acoustic-to-electrical converter is less than a frequency threshold (e.g., 100Hz, 200Hz, 500Hz, 1000Hz, etc.). In some embodiments, the resonant frequency of the acoustic-to-electrical converter may be equal to the resonant frequency of an acoustic substructure in acoustic communication with the acoustic-to-electrical converter. The acoustic substructure resonates with the sound signal at its resonance frequency such that frequency components within a certain frequency band containing the resonance frequency are amplified. The acoustic-electric converter (which is in acoustic communication with the acoustic substructure) resonates with the acoustic signal at its resonant frequency such that signals within a certain frequency band containing its resonant frequency are amplified, and since the resonant frequency of the acoustic substructure is equal to the resonant frequency of the acoustic-electric converter, frequency components near the resonant frequency of the acoustic substructure and/or frequency components near the resonant frequency of the acoustic-electric converter can be "amplified" twice, thereby improving the sensitivity and Q-value of the microphone near the resonant frequency of the acoustic substructure and/or the resonant frequency of the acoustic-electric converter without increasing the volume of the microphone.

While the basic concepts have been described above, it will be apparent to those skilled in the art that the foregoing disclosure is by way of example only and is not intended to be limiting. Although not explicitly described herein, various modifications, improvements, and adaptations to the present disclosure may occur to one skilled in the art. Such modifications, improvements, and modifications are intended to be suggested within this specification, and therefore, such modifications, improvements, and modifications are intended to be included within the spirit and scope of the exemplary embodiments of the present invention.

Meanwhile, the specification uses specific words to describe the embodiments of the specification. Reference to "one embodiment," "an embodiment," and/or "some embodiments" means that a particular feature, structure, or characteristic is associated with at least one embodiment of the present description. Thus, it should be emphasized and should be appreciated that two or more references to "an embodiment" or "one embodiment" or "an alternative embodiment" in various positions in this specification are not necessarily referring to the same embodiment. Furthermore, certain features, structures, or characteristics of one or more embodiments of the present description may be combined as suitable.

Furthermore, those skilled in the art will appreciate that the various aspects of the specification can be illustrated and described in terms of several patentable categories or circumstances, including any novel and useful procedures, machines, products, or materials, or any novel and useful modifications thereof.

Furthermore, the order in which the specification processes elements and sequences, the use of numerical letters, or other designations are used is not intended to limit the order in which the specification flows and methods are performed unless explicitly recited in the claims. While certain presently useful inventive embodiments have been discussed in the foregoing disclosure, by way of various examples, it is to be understood that such details are merely illustrative and that the appended claims are not limited to the disclosed embodiments, but, on the contrary, are intended to cover all modifications and equivalent arrangements included within the spirit and scope of the embodiments of the present disclosure. For example, while the system components described above may be implemented by hardware devices, they may also be implemented solely by software solutions, such as installing the described system on an existing server or mobile device.

Likewise, it should be noted that in order to simplify the presentation disclosed in this specification and thereby aid in understanding one or more inventive embodiments, various features are sometimes grouped together in a single embodiment, figure, or description thereof. This method of disclosure, however, is not intended to imply that more features than are presented in the claims are required for the present description. Indeed, less than all of the features of a single embodiment disclosed above. In some embodiments, numbers describing the components, number of attributes are used, it being understood that such numbers being used in the description of embodiments, in some examples, are modified with the modifier "about," "approximately," or "substantially," etc. Unless otherwise indicated, "about," "approximately," or "substantially" indicate that the number allows for a 20% variation. Accordingly, in some embodiments, numerical data used in the specification and claims is approximations that may vary depending upon the desired properties sought to be obtained by the individual embodiments. In some embodiments, the numerical data should take into account the specified significant digits and employ a method for preserving the general number of digits. Although the numerical ranges and data used in some embodiments of the present disclosure are approximations, in particular embodiments, the settings of such numerical values are as precise as possible.

Claims

1. A microphone, comprising:

an acoustic-to-electric converter for converting an acoustic signal into an electrical signal;

an acoustic structure comprising an acoustic duct and an acoustic cavity in acoustic communication with the acoustic-to-electrical converter and in acoustic communication with the exterior of the microphone through the acoustic duct; wherein,,

the acoustic structure has a first resonant frequency and the electroacoustic transducer has a second resonant frequency, the absolute value of the difference between the first resonant frequency and the second resonant frequency being no greater than 1000Hz.

2. The microphone of claim 1, further comprising a housing, a plate, and an acoustic port disposed on the plate, the plate dividing a space within the housing into at least two cavities, the at least two cavities including a first cavity and the acoustic cavity, the acoustic pipe disposed on a cavity wall constituting the acoustic cavity, the acoustic-to-electric converter disposed in the first cavity, the acoustic cavity in acoustic communication with the acoustic-to-electric converter through the acoustic port.

3. The microphone of claim 1, the acoustic-to-electrical converter being located in an acoustic cavity of the acoustic structure, the acoustic signal entering the acoustic cavity through the acoustic pipe and being transferred to the acoustic-to-electrical converter.

4. The microphone of claim 1, the first resonant frequency being equal to the second resonant frequency.

5. The microphone of claim 1, the sensitivity of the microphone response at the first resonant frequency being greater than the sensitivity of the electroacoustic transducer response at the first resonant frequency, and/or the sensitivity of the microphone response at the second resonant frequency being greater than the sensitivity of the electroacoustic transducer response at the second resonant frequency.

6. The microphone of claim 1, further comprising a second acoustic structure comprising a second sound guide and a second acoustic cavity, the second acoustic cavity in acoustic communication with the exterior of the microphone through the second sound guide;

the second acoustic cavity is in acoustic communication with the acoustic cavity through the acoustic pipe; wherein,,

the second acoustic structure has a third resonance frequency different from the first resonance frequency and/or the second resonance frequency, and absolute values of differences between the third resonance frequency, the first resonance frequency, and the second resonance frequency are in a range of 100Hz-1000Hz.

7. The microphone of claim 1, further comprising a second acoustic structure comprising a second sound guide and a second acoustic cavity, the second acoustic cavity in acoustic communication with the exterior of the microphone through the second sound guide;

the second acoustic structure has a third resonant frequency, and values of at least two resonant frequencies among the third resonant frequency, the first resonant frequency and the second resonant frequency are the same.

8. The microphone of claim 6 or 7, further comprising a first plate, a second plate, and an acoustic port disposed on the first plate, the sound guide tube disposed on the second plate, the first and second plates dividing a space within the housing into a first cavity, the acoustic cavity, and the second acoustic cavity;

the first plate body and at least a portion of the housing define the first cavity, the acoustic-to-electric converter being disposed in the first cavity;

at least a portion of the first and second plates and the housing define the acoustic cavity;

The second plate and at least a portion of the housing define the second acoustic cavity, and the second sound guide tube is disposed on a cavity wall constituting the second acoustic cavity.

9. The microphone of claim 1, further comprising a second acoustic structure and a third acoustic structure, the second acoustic structure comprising a second sound guide and a second acoustic cavity;

the third acoustic structure comprises a third sound guide pipe, a fourth sound guide pipe and a third acoustic cavity;

the acoustic cavity is in acoustic communication with the third acoustic cavity through the third sound guide tube;

the second acoustic cavity is in acoustic communication with the outside of the acoustic microphone through the second sound guide tube and in acoustic communication with the third acoustic cavity through the fourth sound guide tube;

the third acoustic cavity is in acoustic communication with the acoustic-to-electric converter.

10. The microphone of claim 9, further comprising a first plate, a second plate, a third plate, and an acoustic port, wherein the acoustic port is disposed on the first plate, the third acoustic pipe, the fourth acoustic pipe are disposed on the second plate, the third plate is physically connectable with the second plate and the housing;

The first plate and at least a portion of the housing define a first cavity in which the acoustic-to-electric converter is located;

at least a portion of the first plate, the second plate, and the housing define the third acoustic cavity;

at least a portion of the second plate, the third plate, and the housing define the acoustic cavity, the sound guide tube being disposed on a cavity wall constituting the acoustic cavity;

the second plate, the third plate, and at least a portion of the housing define the second acoustic cavity, and the second sound guide tube is disposed on a cavity wall constituting the second acoustic cavity.

11. The microphone of claim 9, the second acoustic structure having a third resonant frequency, the third acoustic structure having a fourth resonant frequency;

the fourth resonant frequency, the third resonant frequency, the first resonant frequency and the second resonant frequency are different, and the absolute value of the difference value between the fourth resonant frequency, the third resonant frequency, the first resonant frequency and the second resonant frequency is 100Hz-1000Hz.

12. The microphone of claim 9, the second acoustic structure having a third resonant frequency, the third acoustic structure having a fourth resonant frequency;

And at least two of the fourth resonant frequency, the third resonant frequency, the first resonant frequency and the second resonant frequency have the same value.

13. The microphone of claim 1, the acoustic structure comprising a plurality of acoustic substructures, the acoustic-to-electrical converter comprising a plurality of acoustic-to-electrical converters in one-to-one correspondence with the acoustic substructures, each of the acoustic substructures comprising the sub-acoustic duct and the acoustic subchamber, the acoustic subchamber of each of the acoustic substructures being in acoustic communication with the corresponding acoustic-to-electrical converter and with an exterior of the microphone through the sub-acoustic duct.

14. The microphone of claim 13, wherein an absolute value of a difference between a resonant frequency of the acoustic substructure and a resonant frequency of its corresponding acoustic-to-electric converter is no greater than 200Hz.

15. The microphone of claim 14, the resonant frequency of the acoustic substructure being equal to the resonant frequency of its corresponding acoustic-to-electrical converter.

16. The microphone of claim 13, the microphone having a sensitivity that is greater than a sensitivity of the acousto-electric transducer to respond at a resonant frequency of the acoustic substructure, and/or

The sensitivity of the microphone response at the resonant frequency of the electroacoustic transducer is greater than the sensitivity of the electroacoustic transducer response at its resonant frequency.