CN116169200A - Near infrared sensitive silicon photomultiplier and manufacturing process method thereof - Google Patents
Near infrared sensitive silicon photomultiplier and manufacturing process method thereof Download PDFInfo
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
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- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier working in avalanche mode, e.g. avalanche photodiode
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
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Abstract
The invention discloses a near infrared sensitive silicon photomultiplier and a manufacturing process method thereof, wherein the near infrared sensitive silicon photomultiplier comprises: the back electrode is positioned at the bottom layer of the whole near infrared sensitive silicon photomultiplier; an epitaxial silicon wafer, the epitaxial silicon wafer comprising: the substrate is positioned on the surface of the back electrode and is composed of low-resistance P-type silicon; the epitaxial layer is positioned on the surface of the substrate and is composed of epitaxial high-resistance P-type silicon; one or more implantation regions distributed deep in the epitaxial layer; n (N) ++ The doped region is formed by shallow implantation of phosphorus atoms on the surface of the epitaxial layer; n (N) ++ The doped region is shallow etched with a photonic crystal periodic structure; an antireflection film formed by depositing a dielectric film on the surface of the epitaxial layer; a ring-shaped top electrode forming a single bodyThe closed loop encloses all the implanted regions. According to the near-infrared sensitive silicon photomultiplier, the photonic crystal micro-nano structure for enhancing near-infrared absorption is introduced into the heavily doped region of the SiPM surface layer, so that the absorption efficiency of near-infrared light can be enhanced, and the photoelectric conversion efficiency of a near-infrared band can be improved.
Description
Technical Field
The invention relates to the technical field of photoelectric detectors, in particular to a near infrared sensitive silicon photomultiplier and a manufacturing process method thereof.
Background
Silicon photomultiplier (SiPM) is a single photon detector with photon number resolution capability. The micro-cell array is formed by connecting a series of avalanche photodiodes (Avalanche Photodiode, APDs) working in a Geiger mode in parallel, wherein the micro-cells are mutually independent and are connected in series with respective quenching resistors, all the micro-cells output signals through a common electrode, and the signal size is proportional to the number of the micro-cells in an excited state, namely proportional to the number of detected photons. Compared with the traditional photomultiplier (Photomultiplier Tube, PMT), the SiPM works in a non-vacuum environment and is not easy to damage, the SiPM is small in size, free from the influence of a magnetic field, low in power consumption and high in single photon resolution, and the advantages enable the SiPM to gradually replace the PMT to become a single photon detector with wide development prospect, so that the SiPM is widely applied to the fields requiring weak light detection such as astrophysics, high-energy physics, laser radar, nuclear medicine imaging and the like.
Near-infrared brain function imaging, also called as Functional near infrared spectroscopy (fNIRS), is used as a noninvasive brain function neural imaging technology, has the advantages of simplicity in operation, low use cost, strong anti-interference performance, good compatibility and the like, and can realize rapid examination of brain functions of patients in various clinical natural scenes. fNIRS is a non-invasive neural activity imaging technique based on optical principles, which utilizes the strong penetrability of near infrared light (650-950 nm) to biological tissues. The light source diffuses light in a banana-type path by emitting near-infrared light to a specific brain region, and a light source detector located at a distance from the light source can collect light diffused back by the tissue. In the near infrared spectrum window, the near infrared light has strong penetrability, can penetrate tissues with a certain depth and reach the cerebral cortex with the thickness of 20-30 mm in the cranium. The dominant and physiologically dependent absorbing chromophore in biological tissue is hemoglobin, which exists in two forms, oxygenated hemoglobin (HbO 2) and deoxygenated hemoglobin (HbR). The two have distinguishable light absorption characteristics in a near infrared spectrum window, and are mainly represented by that the absorption coefficient of HbO2 is higher when the wavelength is more than 805 nm; in contrast, the absorption coefficient of HbR is higher at wavelengths less than 805 nm. HbO2 and HbR in cerebral cortex blood vessels absorb light waves in the near infrared light band to different degrees, and near infrared light is attenuated. Based on the correlation of light attenuation and chromophore concentration changes in tissue, fNIRS can quantitatively analyze HbO2 and HbR concentration changes in brain tissue.
Near infrared sensitive SiPM can be used in fnrs systems to achieve deeper brain region imaging.
The current mature silicon photomultiplier SiPM has lower photoelectric conversion efficiency in the near infrared band, and can not meet the imaging requirement of fNIRS brain functions.
Therefore, how to provide a silicon photomultiplier having high photoelectric conversion efficiency in the near infrared band is a problem to be solved by those skilled in the art.
Disclosure of Invention
In view of the above problems, the present invention provides a near-infrared sensitive silicon photomultiplier and a manufacturing method thereof, which at least solve the above part of the technical problems, and the method introduces a photonic crystal micro-nano structure for enhancing near-infrared absorption into a heavily doped region of a SiPM surface layer, so as to enhance the absorption efficiency of near-infrared light and improve the photoelectric conversion efficiency of near-infrared band.
In a first aspect, an embodiment of the present invention provides a near infrared sensitive silicon photomultiplier, including:
the back electrode is positioned at the bottom layer of the whole near infrared sensitive silicon photomultiplier;
an epitaxial silicon wafer, the epitaxial silicon wafer comprising: the substrate is positioned on the surface of the back electrode and is composed of low-resistance P-type silicon; the epitaxial layer is positioned on the surface of the substrate and is composed of epitaxial high-resistance P-type silicon;
one or more implantation regions distributed deep in the epitaxial layer, and forming medium-resistance P-type silicon by deep implanting boron atoms into the epitaxial layer;
N ++ the doped region is formed by shallow implanting phosphorus atoms into the surface of the epitaxial layer; the N is ++ The doped region is shallow etched with a micro-nano structure array; the micro-nano structureThe array is a photonic crystal periodic structure;
an antireflection film formed by depositing a dielectric film on the surface of the epitaxial layer;
a ring-shaped top electrode composed of deposited metal penetrating the antireflection film, a bottom and the N ++ The doped regions are in contact to form a closed loop surrounding all of the implanted regions.
Further, the back electrode is made of gold or aluminum, and the thickness of the back electrode is 0.1-10 μm.
Further, the thickness of the photonic crystal periodic structure is 10-70nm, the period is 50-1000nm, and the duty ratio is 40% -60%.
Further, the photonic crystal periodic structure is a 1-dimensional grating periodic structure or a 2-dimensional grating periodic structure.
Further, the boron doping concentration of the low-resistance P-type silicon is 10 18 -10 20 /cm 3 The thickness is 50-500 μm.
Further, the boron doping concentration of the epitaxial high-resistance P-type silicon is 10 13 -10 15 /cm 3 The thickness is 3-50 μm.
Further, the boron doping concentration of the medium resistance P-type silicon is 10 16 -10 18 /cm 3 The depth is 1-2 μm; each injection region is square with the side length of 2-20 microns or round with the diameter of 2-20 microns, and the period of the injection region is 4-40 microns.
Further, the N is ++ The phosphorus doping concentration of the doped region was 10 18 -10 20 /cm 3 The depth is 1 μm or less.
Further, the dielectric film is any one of the following: silicon oxide, silicon dioxide, aluminum oxide or silicon nitride.
In a second aspect, an embodiment of the present invention further provides a process for manufacturing a near-infrared sensitive silicon photomultiplier, where the manufacturing a near-infrared sensitive silicon photomultiplier according to any one of the above embodiments includes the specific steps of:
s1, manufacturing a back electrode layer at the bottom of a substrate of an epitaxial silicon wafer to form ohmic contact; the epitaxial silicon wafer comprises the following components from bottom to top: a substrate and an epitaxial layer;
s2, forming medium-resistance P-type silicon in the epitaxial layer through photoetching patterning and ion deep boron atom injection;
s3, forming N on the surface of the epitaxial layer through photoetching patterning and ion shallow implantation of phosphorus atoms ++ A doped region;
s4, at the N ++ Shallow etching the micro-nano structure array on the surface of the doped region; the micro-nano structure array is a photonic crystal periodic structure;
s5, depositing a dielectric film on the surface of the epitaxial layer to form an antireflection film;
s6, etching the anti-reflection film to manufacture an annular top electrode; the annular top electrode encloses all of the implanted regions.
The technical scheme provided by the embodiment of the invention has the beneficial effects that at least:
according to the near-infrared sensitive silicon photomultiplier provided by the embodiment of the invention, the photonic crystal micro-nano structure for enhancing near-infrared absorption is introduced into the heavily doped region of the SiPM surface layer, so that the absorption efficiency of near-infrared light can be enhanced, and the photoelectric conversion efficiency of a near-infrared band can be improved.
Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and claims thereof as well as the appended drawings.
The technical scheme of the invention is further described in detail through the drawings and the embodiments.
Drawings
The accompanying drawings are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate the invention and together with the embodiments of the invention, serve to explain the invention. In the drawings:
FIG. 1 is a schematic cross-sectional structure of a near infrared sensitive silicon photomultiplier according to an embodiment of the present invention;
FIG. 2 is a flow chart of a process for fabricating a near infrared sensitive silicon photomultiplier according to an embodiment of the present invention;
fig. 3 is a process flow chart of a manufacturing process method of a near infrared sensitive silicon photomultiplier provided by an embodiment of the invention.
In the accompanying drawings: 1-a back electrode; 2-a substrate; 3-epitaxial layers; 4-implantation region; 5-N ++ A doped region; 6-micro-nano structure array; 7-an antireflection film; 8-ring top electrode.
Detailed Description
The invention is further described in connection with the following detailed description, in order to make the technical means, the creation characteristics, the achievement of the purpose and the effect of the invention easy to understand.
In the description of the present invention, it should be noted that the directions or positional relationships indicated by the terms "upper", "lower", "inner", "outer", "front", "rear", "both ends", "one end", "the other end", etc. are based on the directions or positional relationships shown in the drawings, are merely for convenience of describing the present invention and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific direction, be configured and operated in the specific direction, and thus should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "provided," "connected," and the like are to be construed broadly, and may be fixedly connected, detachably connected, or integrally connected, for example; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present invention will be understood in specific cases by those of ordinary skill in the art.
The embodiment of the invention provides a near infrared sensitive silicon photomultiplier, which is shown in fig. 1 and comprises the following components from bottom to top: back electrode 1, epitaxial silicon wafer, injection region 4, N ++ Doped region 5, antireflection film 7 and annular top electrode 8.
Wherein the bottom back electrode 1 is made of gold or aluminum, and has a thickness of 0.1-10 μm. Adhesion to the substrate silicon, as well as conductivity and stability can be ensured.
The epitaxial silicon wafer comprises: a substrate 2 and an epitaxial layer 3. The substrate 2 is positioned on the surface of the back electrode 1 and is composed of low-resistance P-type silicon; boron doping concentration of low resistance P-type silicon of 10 18 -10 20 /cm 3 The thickness is 50-500 μm. The epitaxial layer 3 is positioned on the surface of the substrate 2 and is composed of epitaxial high-resistance P-type silicon; boron doping concentration of epitaxial high-resistance P-type silicon is 10 13 -10 15 /cm 3 The thickness is 3-50 μm.
The boron atoms are deeply implanted into the epitaxial layer 3 to form medium-resistance P-type silicon, and the medium-resistance P-type silicon is distributed in the deep part of the epitaxial layer 3 to form one or more implantation regions 4. The boron doping concentration of the medium resistance P-type silicon is 10 16 -10 18 /cm 3 The depth is 1-2 μm; each injection region 4 is square with side length of 2-20 μm or round with diameter of 2-20 μm, the period of the injection region 4 (the center distance between two injection regions 4 is the period) is 4-40 μm, and the number of the injection regions 4 is 100-1000000.
Shallow implanting phosphorus atoms into the surface of epitaxial layer 3 to form N ++ Doped region 5, phosphorus doping concentration of 10 18 -10 20 /cm 3 The depth is 1 μm or less.
At N ++ The doped region 5 is subjected to shallow etching to form a photonic crystal periodic structure (namely a micro-nano structure array 6), the thickness is 10-70nm, the period is 50-1000nm, the duty ratio is 40% -60%, and the periodic structure is a 1-dimensional grating periodic structure or a 2-dimensional grating periodic structure.
And depositing a dielectric film on the surface of the epitaxial layer 3 to form an antireflection film 7. The dielectric film is any one of the following: silicon oxide, silicon dioxide, aluminum oxide or silicon nitride. The thickness of the antireflection film 7 is 100-200nm.
A ring-shaped top electrode 8 made of deposited metal penetrating the antireflection film 7, a bottom and N ++ The doped regions 5 are in contact and form a closed loop surrounding all the implanted regions 4.
According to the near-infrared sensitive silicon photomultiplier provided by the embodiment, the photonic crystal micro-nano structure for enhancing near-infrared absorption is introduced into the heavily doped region of the SiPM surface layer, so that the absorption efficiency of near-infrared light can be enhanced, and the photoelectric conversion efficiency of a near-infrared band can be improved. The near infrared sensitive silicon photomultiplier can be widely used for an fNIRS system and meets the imaging requirement of fNIRS brain functions.
Based on the same inventive concept, the invention also provides a manufacturing process method of the near infrared sensitive silicon photomultiplier, which can manufacture the near infrared sensitive silicon photomultiplier of the embodiment; the method is shown in fig. 2, and specifically comprises the following steps:
s1, manufacturing a back electrode layer at the bottom of a substrate of an epitaxial silicon wafer to form ohmic contact; the epitaxial silicon wafer comprises the following components from bottom to top: a substrate and an epitaxial layer;
s2, forming medium-resistance P-type silicon in the epitaxial layer through photoetching patterning and ion deep boron atom injection;
s3, forming N on the surface of the epitaxial layer through photoetching patterning and ion shallow implantation of phosphorus atoms ++ A doped region;
s4, at N ++ Shallow etching the micro-nano structure array on the surface of the doped region; the micro-nano structure array is a photonic crystal periodic structure;
s5, depositing a dielectric film on the surface of the epitaxial layer to form an antireflection film;
s6, manufacturing an annular top electrode by etching the antireflection film; the annular top electrode encloses all of the implanted regions.
In the embodiment, referring to fig. 3, the following manner may be adopted: firstly, purchasing an epitaxial silicon wafer, wherein the substrate is heavy P-doped (namely low-resistance P-type silicon on a back electrode), and the epitaxial layer is light P-doped (namely epitaxial high-resistance P-type silicon on the low-resistance P-type silicon); then, manufacturing a metal electrode (namely a bottommost back electrode) at the bottom of the substrate to form ohmic contact; then forming a medium-sized P doped region (namely medium-resistance P-type silicon) in the epitaxial layer by photoetching patterning and ion deep implantation of boron atoms, wherein the doped region is distributed in a periodic array mode; then forming heavy N-doped region (i.e. N) on the surface of the epitaxial layer by photoetching and patterning (by standard photoetching process, leaking out the position to be implanted and protecting the photoresist at other positions) ++ A doped region); then etching a photonic crystal micro-nano structure on the surface of the heavy N-doped region to form a near infrared absorption layer; however, the method is thatThen depositing dielectric films (silicon dioxide, aluminum oxide, silicon nitride and the like) on the surfaces to be used as antireflection films; then etching the antireflection film to manufacture the annular top electrode. Specifically, the top electrode is obtained by photoetching, etching an antireflection film, evaporating a metal electrode (titanium 10nm and gold 200 nm) and stripping. Alternatively, the micro-nano hole array, the lattice and the grating structure can be called as a photonic crystal microstructure, and the absorption of near infrared light by the photonic crystal periodic structure can be increased by selecting a proper period and etching depth.
The near-infrared sensitive silicon photomultiplier provided by the embodiment realizes near-infrared sensitive SiPM by introducing the photonic crystal near-infrared absorption layer, can enhance the absorption efficiency of near-infrared light, improves the photoelectric conversion efficiency of a near-infrared band, and can be widely applied to a near-infrared brain function imaging system.
It will be apparent to those skilled in the art that various modifications and variations can be made to the present invention without departing from the spirit or scope of the invention. Thus, it is intended that the present invention also include such modifications and alterations insofar as they come within the scope of the appended claims or the equivalents thereof.
Claims (10)
1. A near infrared sensitive silicon photomultiplier, comprising:
the back electrode is positioned at the bottom layer of the whole near infrared sensitive silicon photomultiplier;
an epitaxial silicon wafer, the epitaxial silicon wafer comprising: the substrate is positioned on the surface of the back electrode and is composed of low-resistance P-type silicon; the epitaxial layer is positioned on the surface of the substrate and is composed of epitaxial high-resistance P-type silicon;
one or more implantation regions distributed deep in the epitaxial layer, and forming medium-resistance P-type silicon by deep implanting boron atoms into the epitaxial layer;
N ++ the doped region is formed by shallow implanting phosphorus atoms into the surface of the epitaxial layer; the N is ++ The doped region is shallow etched with a micro-nano structure array; the micro-nano structure array is a photonic crystal periodic structure;
an antireflection film formed by depositing a dielectric film on the surface of the epitaxial layer;
a ring-shaped top electrode composed of deposited metal penetrating the antireflection film, a bottom and the N ++ The doped regions are in contact to form a closed loop surrounding all of the implanted regions.
2. The near infrared sensitive silicon photomultiplier of claim 1, wherein the back electrode is made of gold or aluminum and has a thickness of 0.1-10 μm.
3. The near infrared sensitive silicon photomultiplier of claim 1, wherein the photonic crystal periodic structure has a thickness of 10-70nm, a period of 50-1000nm, and a duty cycle of 40% -60%.
4. A near infrared sensitive silicon photomultiplier according to claim 1 or 3, wherein the photonic crystal periodic structure is a 1-dimensional grating periodic structure or a 2-dimensional grating periodic structure.
5. The near infrared sensitive silicon photomultiplier of claim 1, wherein the low resistance P-type silicon has a boron doping concentration of 10 18 -10 20 /cm 3 The thickness is 50-500 μm.
6. The near infrared sensitive silicon photomultiplier of claim 1, wherein the epitaxial high resistance P-type silicon has a boron doping concentration of 10 13 -10 15 /cm 3 The thickness is 3-50 μm.
7. The near infrared sensitive silicon photomultiplier of claim 1, wherein the medium resistance P-type silicon has a boron doping concentration of 10 16 -10 18 /cm 3 The depth is 1-2 μm; each injection region is square with the side length of 2-20 microns or round with the diameter of 2-20 microns, and the period of the injection region is 4-40 microns.
8. A near infrared sensitive device as claimed in claim 1A silicon-sensitive photomultiplier characterized in that the N ++ The phosphorus doping concentration of the doped region was 10 18 -10 20 /cm 3 The depth is 1 μm or less.
9. The near infrared sensitive silicon photomultiplier of claim 1, wherein the dielectric film is any one of: silicon oxide, silicon dioxide, aluminum oxide or silicon nitride.
10. A process for manufacturing a near infrared sensitive silicon photomultiplier according to any one of claims 1 to 9, comprising the steps of:
s1, manufacturing a back electrode layer at the bottom of a substrate of an epitaxial silicon wafer to form ohmic contact; the epitaxial silicon wafer comprises the following components from bottom to top: a substrate and an epitaxial layer;
s2, forming medium-resistance P-type silicon in the epitaxial layer through photoetching patterning and ion deep boron atom injection;
s3, forming N on the surface of the epitaxial layer through photoetching patterning and ion shallow implantation of phosphorus atoms ++ A doped region;
s4, at the N ++ Shallow etching the micro-nano structure array on the surface of the doped region; the micro-nano structure array is a photonic crystal periodic structure;
s5, depositing a dielectric film on the surface of the epitaxial layer to form an antireflection film;
s6, etching the anti-reflection film to manufacture an annular top electrode; the annular top electrode encloses all of the implanted regions.
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| JPH0513806A (en) * | 1991-07-03 | 1993-01-22 | Nec Corp | Semiconductor photoelector |
| CN103650176A (en) * | 2011-07-12 | 2014-03-19 | 丸文株式会社 | Light emitting element and method for manufacturing same |
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