CN211957666U - Photoelectric avalanche diode applied to sensing front end of high-sensitivity optical coupling isolation chip - Google Patents
Photoelectric avalanche diode applied to sensing front end of high-sensitivity optical coupling isolation chip Download PDFInfo
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Abstract
The utility model relates to a be applied to photoelectric avalanche diode of high sensitive opto-coupler isolation chip sensing front end, it includes the base plate its characterized in that, be provided with dark N trap, first P trap and second P trap in the base plate, the cross sectional shape of dark N trap is the chevron shape, the dark N trap includes the horizontal segment of bottom and the three vertical section that upwards stretches out on the horizontal segment, and three vertical section is first vertical section, second vertical section, third vertical section respectively from the left hand right side, and first P trap is located between first vertical section and the second vertical section, and the second P trap is located between second vertical section and the third vertical section. The utility model discloses structure compatible standard CMOS technology can be integrated with the CMOS circuit, can be used to infrared and visible light (300nm to 950nm) wavelength's photoelectric detection system in. The structure is compatible with a CMOS (complementary metal oxide semiconductor) process, realizes higher internal gain, achieves good photoelectric detection performance indexes, and has the advantages of small volume, high sensitivity, high response speed, large bandwidth and the like.
Description
Technical Field
The utility model relates to a be applied to photoelectric avalanche diode of high sensitive opto-coupler isolation chip sensing front end.
Background
Photodiodes may be used to detect optical signals, with applications in light detectors for cameras, smoke detectors, and various optical communication devices. All types of photodiodes can be used to detect burst illumination or to detect light emissions within the same circuitry. The photodiode and the light emitting device (usually a light emitting diode) are often combined together to form a module, which is often referred to as a photocoupling element. This allows the movement of an external mechanical element (e.g., a photointerrupter) to be analyzed by analyzing the received illumination. The photodiode also serves as an intermediary between the analog circuit and the digital circuit, so that the two circuits can be coupled by an optical signal, which can improve the safety of the circuit. In scientific research and industry, a photodiode is often used to accurately measure light intensity because it has better linearity than other photoconductive materials. Photodiodes are also used in a wide range of medical applications, such as x-ray computed tomography imaging and pulse detectors.
The silicon-based APD type photodiode is an avalanche type photodiode, realizes a photoelectric conversion function by utilizing a mechanism of avalanche breakdown inside the diode, and has high internal gain and high signal bandwidth, so that the silicon-based APD type photodiode is widely applied to the fields of optical communication systems, optical ranging systems, optical interconnection systems and rapid photoelectric automatic control.
In information communication equipment such as optical space transmission and optical fiber communication, a photodiode is often used as a light sensor. In recent years, the development of information communication devices has been progressing with a trend toward the management of a large amount of information and the management of light speed, and therefore, a photodiode used is required to have a higher response speed.
Existing photodiodes include the following categories:
a PN junction photodiode:
fig. 1 is an energy band diagram of a PN junction type photodiode, and fig. 2 is a device structural diagram thereof. When light having a photon energy greater than the bandgap (E) of silicon is incident on a pn junction, the light can generate photo-generated electron-hole pairs in the silicon crystal, as shown in figure 1. These electrons and holes are diffused by a concentration gradient existing in the pn junction region, and after reaching the depletion layer, they are accelerated by an electric field, and the electrons move to the n-type region and the holes move to the p-type region. As a result, when both ends of the pn junction are open, an open-circuit voltage Voc is generated, which is negative in the n-type region and positive in the p-type region. If a load is connected across the pn junction, a current flows, which is generated by the photo-generated electromotive force of the pn junction.
The sensitivity of the photodiode varies depending on the wavelength of light, and the shorter the wavelength, the more easily the photodiode can be efficiently absorbed at a position (shallow region) close to the surface. Therefore, for light of a long wavelength, a pn junction should be formed at a far position (deep region) from the surface in order to improve its sensitivity. And in order to improve the sensitivity to short wavelength light, a pn junction should be formed near the silicon surface.
II, PIN type photodiode:
in order to improve the frequency response characteristics of PN type photodiodes, and to try to reduce carrier diffusion time and junction capacitance, a PIN photodiode is made with an intrinsic layer between the p-region and the n-region.
The structure of the PIN photodiode is shown in fig. 3, and the electric field distribution thereof is shown in fig. 4. As can be seen, the intrinsic layer is first a high electric field region. This is because the resistivity of the intrinsic material is high and, therefore, the reverse bias electric field is mainly concentrated in this region. The high resistance results in a significant reduction in dark current. The photo-generated electron-hole pairs generated here will be immediately separated by the electric field and undergo a fast drift motion. The introduction of the intrinsic layer significantly increases the depletion layer thickness of the p + region. This is advantageous in shortening the diffusion process of carriers. The widening of the depletion layer also significantly reduces the junction capacitance, thereby reducing the circuit time constant. The widening of the depletion layer also facilitates the absorption of the light radiation in the long-wavelength region, since the absorption coefficient of the silicon material is significantly reduced in the long-wavelength region of the spectral response. Thus, the PIN structure provides greater sensitivity, which is beneficial to improving quantum efficiency.
Third, APD type photodiode:
photodiodes that provide in-current gain based on the carrier avalanche effect are referred to as Avalanche Photodiodes (APDs). APD photodiodes were developed on a PIN basis. Common PN photodiodes and PIN photodiodes are photodetectors without internal gain, and in practical application of an optical detection system, most of them detect weak optical signals, and the use of an optical detector with internal gain will help to detect weak optical signals. APD photodiodes are photodetectors with internal gain. The photoelectric current gain is obtained by utilizing the avalanche effect of the photon-generated carriers in the high electric field region, and the photoelectric current gain amplifier has the advantages of high sensitivity, quick response and the like.
With the continuous development of the optoelectronic communication system, the conventional discrete photodiode is difficult to satisfy the requirement. The photodiode has characteristics such as high responsivity and high sensitivity, and is required to be highly integrated and miniaturized. The conventional discrete photodiode is not only bulky, but also often uses a special process (e.g., SOI substrate) or a special semiconductor material (Ge, InGaAs, InP, GaN, HgCdTe, etc.) in order to improve its photodetection performance and meet the requirements of high responsivity and high sensitivity. This not only makes it expensive to manufacture, but also makes it impossible to integrate with CMOS circuitry that later processes the electrical signals.
When the avalanche photodiode works, the avalanche photodiode needs to be in a reverse bias state, and how to protect the device from breakdown damage under higher reverse bias needs to be avoided by designing a proper protection structure. The slow diffusion of photogenerated carriers in the substrate and the parasitic capacitance can negatively impact the speed of the avalanche photodiode.
The high-sensitivity optical coupling isolation chip is widely applied nowadays, so a photoelectric avalanche diode applied to the sensing front end of the high-sensitivity optical coupling isolation chip is sought, and the solving of some traditional technical problems is very urgent.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to overcome above-mentioned problem, designed a photoelectric avalanche diode who is applied to high sensitive opto-coupler isolation chip sensing front end, its compatible standard CMOS technology can be integrated with the CMOS circuit, can be used to in the photoelectric detection system of infrared and visible light (300nm to 950nm) wavelength. The structure is compatible with a CMOS (complementary metal oxide semiconductor) process, realizes higher internal gain, achieves good photoelectric detection performance indexes, and has the advantages of small volume, high sensitivity, high response speed, large bandwidth and the like.
In order to solve the technical problem, the utility model provides a following technical scheme:
a photoelectric avalanche diode applied to the sensing front end of a high-sensitivity optical coupling isolation chip is characterized by comprising a substrate, wherein a deep N well, a first P well and a second P well are arranged in the substrate,
the cross section of the deep N trap is in a shape of Chinese character 'shan', the deep N trap comprises a transverse section at the bottom and three vertical sections extending upwards from the transverse section, the three vertical sections are respectively a first vertical section, a second vertical section and a third vertical section from left to right,
the top surface of the substrate is provided with six longitudinal shallow trench isolation regions which are sequentially arranged in parallel from left to right, the six shallow trench isolation regions are respectively a first shallow trench isolation region, a second shallow trench isolation region, a third shallow trench isolation region, a fourth shallow trench isolation region, a fifth shallow trench isolation region and a sixth shallow trench isolation region from left to right,
the left and right sides of the first vertical section are respectively provided with a first shallow trench isolation region and a second shallow trench isolation region, the left and right sides of the second vertical section are respectively provided with a third shallow trench isolation region and a fourth shallow trench isolation region, the left and right sides of the third vertical section are respectively provided with a fifth shallow trench isolation region and a sixth shallow trench isolation region, the first P well is positioned between the second shallow trench isolation region and the third shallow trench isolation region, the second P well is positioned between the fourth shallow trench isolation region and the fifth shallow trench isolation region, the top surface of the first P well is provided with a first P + layer, the top surface of the second P well is provided with a second P + layer, the first P + layer and the second P + layer are connected with anode electrodes, the top surfaces of the three vertical sections of the deep N well are provided with N + layers, and the N + layers are connected with cathode electrodes.
Preferably, the doping concentration of the substrate is 1014-1015/cm3Deep N wellDoping concentration of 5 x 1014To 5 x 1016/cm3The doping concentration of the first P well and the second P well is 1015To 1018/cm3。
Preferably, the longitudinal dimension and the transverse dimension ratio of the first shallow trench isolation region, the second shallow trench isolation region, the third shallow trench isolation region, the fourth shallow trench isolation region, the fifth shallow trench isolation region and the sixth shallow trench isolation region are both 5: 1.
preferably, the lateral dimension of the deep N-well is 2 to 200 microns, and the longitudinal dimension of the deep N-well is between 0.5 to 20 microns.
Preferably, the lateral dimension of the deep N-well is 20 microns, the depth of the deep N-well is 0.5 to 2 microns, typically 1.2 microns, the width of the first vertical section is 0.5 to 2 microns, typically 1 micron, the width of the second vertical section is 0.5 to 2.5 microns, typically 1.5 microns, the width of the third vertical section is 0.5 to 2 microns, typically 1 micron, the first shallow trench isolation region, the second shallow trench isolation region, the third shallow trench isolation region, the fourth, fifth and sixth shallow trench isolation regions are each 0.05 to 0.25 microns wide, typically 0.15 microns wide, the first and second P-wells are each 2 to 10 microns wide, typically 6 microns deep, and the first and second P-wells are each 0.25 to 0.75 microns deep, typically 0.46 microns deep.
The utility model has the advantages that:
the utility model relates to an avalanche photodiode, its structure compatible standard CMOS technology can be integrated with the CMOS circuit, can be used to infrared and visible light (300nm to 950nm) wavelength's photoelectric detection system. The structure is compatible with a CMOS (complementary metal oxide semiconductor) process, realizes higher internal gain, achieves good photoelectric detection performance indexes, and has the advantages of small volume, high sensitivity, high response speed, large bandwidth and the like.
Drawings
The accompanying drawings are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention, and together with the description serve to explain the invention and not to limit the invention.
Fig. 1 is an energy band diagram of a PN junction photodiode.
Fig. 2 is a device structural view of a PN junction type photodiode.
Fig. 3 is a structural diagram of a PIN type photodiode.
Fig. 4 is a diagram showing an electric field distribution of the PIN type photodiode.
Fig. 5 is the utility model discloses be applied to the photoelectric avalanche diode's of high sensitive opto-coupler isolation chip sensing front end schematic diagram.
Fig. 6 is the utility model discloses be applied to the photoelectric avalanche diode's of high sensitive opto-coupler isolation chip sensing front end responsivity schematic diagram.
Fig. 7 is the utility model discloses be applied to the avalanche gain sketch map of the photoelectric avalanche diode of high sensitive opto-coupler isolation chip sensing front end.
Fig. 8 is the utility model discloses be applied to the work bandwidth sketch map of the photoelectric avalanche diode of high sensitive opto-coupler isolation chip sensing front end.
Wherein
Wherein:
the substrate 1 is provided with a plurality of grooves,
a deep N-well 2, a horizontal section 201, a first vertical section 202, a second vertical section 203, a third vertical section 204,
the first P-well 3 is formed by a first P-well,
the second P-well 4 is formed by a second P-well,
a shallow trench isolation 5, a first shallow trench isolation 501, a second shallow trench isolation 502, a third shallow trench isolation 503, a fourth shallow trench isolation 504, a fifth shallow trench isolation 505, a sixth shallow trench isolation 506,
a first P + layer 6 of a first type,
a second P + layer 7 of a second P + type,
an anode electrode (8) for the anode,
an N + layer 9, which is,
and a cathode electrode 10.
Detailed Description
The technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, rather than all embodiments, and all other embodiments obtained by a person of ordinary skill in the art without creative work belong to the protection scope of the present invention based on the embodiments of the present invention.
As shown in fig. 5, the avalanche photodiode applied to the sensing front end of the high-sensitivity optical coupling isolation chip is designed by using a standard CMOS process, does not need any special customized process or special substrate and material, and is mainly used in a photoelectric detection system with infrared and visible light (300nm to 950nm) wavelengths.
The photoelectric avalanche diode applied to the sensing front end of the high-sensitivity optical coupling isolation chip comprises a substrate 1, wherein a deep N well 2, a first P well 3 and a second P well 4 are arranged in the substrate 1, the conductive type of the substrate 1 is P type, and the doping concentration is 1014-1015/cm3The doping concentration of the deep N well 2 is 5 x 1014To 5 x 1016/cm3The doping concentration of the first P well 3 and the second P well 4 is 1015To 1018/cm3。
The lateral dimension of the deep N-well 2 is 2 micrometers to 200 micrometers, a typical value here is 20 micrometers, the following specific dimensions are according to an embodiment in which the lateral dimension of the deep N-well 2 is 20 micrometers, the longitudinal dimension of the deep N-well 2 is 0.5 micrometers to 20 micrometers, the depth of the deep N-well 2 is 1.2 micrometers, the cross-sectional shape of the deep N-well 2 is a chevron shape, the deep N-well 2 includes a bottom lateral section 201 and three vertical sections extending upward from the lateral section 201, the three vertical sections are a first vertical section 202, a second vertical section 203 and a third vertical section 204 from left to right, the first vertical section 202 has a width of 1 micrometer, the second vertical section 203 has a width of 1.5 micrometers, the third vertical section 204 has a width of 1 micrometer, the top surface of the substrate 1 is provided with six longitudinal Shallow Trench Isolation (STI)5, the six longitudinal shallow trench isolation regions 5 are arranged in parallel from left to right, the six shallow trench isolation regions 5 are respectively a first shallow trench isolation region 501, a second shallow trench isolation region 502, a third shallow trench isolation region 503, a fourth shallow trench isolation region 504, a fifth shallow trench isolation region 505 and a sixth shallow trench isolation region 506 from left to right, the widths of the first shallow trench isolation region 501, the second shallow trench isolation region 502, the third shallow trench isolation region 503, the fourth shallow trench isolation region 504, the fifth shallow trench isolation region 505 and the sixth shallow trench isolation region 506 are all 0.15 microns, the longitudinal dimension and the transverse dimension ratio of the first shallow trench isolation region 501, the second shallow trench isolation region 502, the third shallow trench isolation region 503, the fourth shallow trench isolation region 504, the fifth shallow trench isolation region 505 and the sixth shallow trench isolation region 506 are all 5: 1, the left and right sides of the first vertical section 202 are respectively a first shallow trench isolation area 501 and a second shallow trench isolation area 502, the left and right sides of the second vertical section 203 are respectively a third shallow trench isolation area 503 and a fourth shallow trench isolation area 504, the left and right sides of the third vertical section 204 are respectively a fifth shallow trench isolation area 505 and a sixth shallow trench isolation area 506, the first P-well 3 is located between the second shallow trench isolation area 502 and the third shallow trench isolation area 503, the second P-well 4 is located between the fourth shallow trench isolation area 504 and the fifth shallow trench isolation area 505, the top surface of the first P-well 3 is provided with a first P + layer 6, the top surface of the second P-well 4 is provided with a second P + layer 7, the first P + layer 6 and the second P + layer 7 are connected with an anode electrode 8, the top surfaces of the three vertical sections of the deep N-well 2 are provided with N + layers 9, and the N + layers 9 are connected with a cathode electrode 10. The width of each of the first P-well 3 and the second P-well 4 is 6 micrometers, and the depth of each of the first P-well 3 and the second P-well 4 is 0.46 micrometer.
The pn junction formed by the first P well 3 and the second P well 4 and the deep N well 2 is the main structure of the avalanche photodiode.
Avalanche Photodiodes (APDs) exploit the avalanche multiplication effect of carriers to amplify the optoelectronic signal to improve the sensitivity of detection, the basic structure of which is susceptible to the avalanche multiplication effect.
The avalanche principle in operation is as follows: the photogenerated electrons entering the depletion region are accelerated by the avalanche electric field and gain high kinetic energy. Impact collision occurs with atoms on the crystal lattice to ionize the atoms and generate new electron and hole pairs. The new hole is accelerated reversely by the avalanche electric field to obtain high kinetic energy, and collides with the atom on the crystal lattice again in the process of passing through, and ionizes the atom to generate another new electron-hole pair. The newly generated electrons are accelerated in reverse by the avalanche electric field, and the above process is repeated to sharply increase the current in the pn junction, so that the APD itself generates a current gain effect, and a high sensitivity characteristic is realized.
The utility model discloses a reasonable in design's pn junction degree of depth, appropriate impurity doping concentration can improve light absorption efficiency greatly, promotes the responsivity. The first P well 3 and the second P well 4 are structured to achieve the purpose of reducing the parasitic capacitance of the pn junction by increasing the local doping concentration. By reducing the parasitic capacitance, the working frequency of the device can be improved, and the purpose of improving the frequency bandwidth is achieved. The shallow trench isolation region 5 can enable the avalanche photodiode device to bear larger reverse voltage without being broken down, so that the intensity of an avalanche electric field is increased, the avalanche gain is increased, and the sensitivity is improved. The substrate 1 is grounded or connected with a negative potential, so that the influence of slow diffusion photon-generated carriers in a substrate of the substrate can be absorbed, and the bandwidth of the avalanche photodiode is increased.
The avalanche photodiode designed according to the above embodiments can withstand higher reverse bias voltage, have higher light absorption rate, higher sensitivity, and larger bandwidth. Referring to FIGS. 6-8, a 0.56A/W responsivity is achieved, with an avalanche gain of 23dB and an operating bandwidth of 8.4 GHz.
And the main indexes of the current conventional ADP device are as follows: the responsivity is between 0.2 to 0.5A/W, and the avalanche gain is less than 21dB, and the work bandwidth is less than 5GHz, the utility model discloses the index that reaches all has obvious improvement.
This be applied to photoelectric avalanche diode of high sensitive opto-coupler isolation chip sensing front end can integrate avalanche photodiode production process to the CMOS process in, consequently the utility model designs an avalanche photodiode of compatible standard CMOS technology has higher internal gain, has realized good photoelectric detection performance, can realize miniaturized photoelectric detection integrated circuit with the high integration of CMOS circuit.
The above is the preferred embodiment of the present invention, and the technical personnel in the field of the present invention can also change and modify the above-mentioned embodiment, therefore, the present invention is not limited to the above-mentioned specific embodiment, and any obvious improvement, replacement or modification made by the technical personnel in the field on the basis of the present invention all belong to the protection scope of the present invention.
Claims (5)
1. A photoelectric avalanche diode applied to the sensing front end of a high-sensitivity optical coupling isolation chip is characterized by comprising a substrate (1), wherein a deep N well (2), a first P well (3) and a second P well (4) are arranged in the substrate (1),
the cross section of the deep N trap (2) is in a shape of Chinese character 'shan', the deep N trap (2) comprises a transverse section (201) at the bottom and three vertical sections extending upwards from the transverse section (201), the three vertical sections are respectively a first vertical section (202), a second vertical section (203) and a third vertical section (204) from left to right,
the top surface of the substrate (1) is provided with six longitudinal shallow trench isolation regions (5), the six shallow trench isolation regions (5) are sequentially arranged in parallel from left to right, the six shallow trench isolation regions (5) are respectively a first shallow trench isolation region (501), a second shallow trench isolation region (502), a third shallow trench isolation region (503), a fourth shallow trench isolation region (504), a fifth shallow trench isolation region (505) and a sixth shallow trench isolation region (506) from left to right,
the left side and the right side of the first vertical section (202) are respectively provided with a first shallow trench isolation area (501) and a second shallow trench isolation area (502), the left side and the right side of the second vertical section (203) are respectively provided with a third shallow trench isolation area (503) and a fourth shallow trench isolation area (504), the left side and the right side of the third vertical section (204) are respectively provided with a fifth shallow trench isolation area (505) and a sixth shallow trench isolation area (506), the first P well (3) is positioned between the second shallow trench isolation area (502) and the third shallow trench isolation area (503), the second P well (4) is positioned between the fourth shallow trench isolation area (504) and the fifth shallow trench isolation area (505), the top surface of the first P well (3) is provided with a first P + layer (6), the top surface of the second P well (4) is provided with a second P + layer (7), and the first P + layer (6) and the second P + layer (7) are connected with an anode electrode (8), the top surfaces of three vertical sections of the deep N well (2) are provided with N + layers (9), and the N + layers (9) are connected with cathode electrodes (10).
2. The avalanche photodiode applied to the sensing front end of the high-sensitivity optically coupled isolation chip as claimed in claim 1, wherein the doping concentration of the substrate is 1014-1015/cm3The doping concentration of the deep N well is 5 x 1014To 5 x 1016/cm3The doping concentration of the first P well and the second P well is 1015To 1018/cm3。
3. The avalanche photodiode applied to the sensing front end of the high-sensitivity optocoupler isolation chip according to claim 1, wherein the longitudinal dimension and the lateral dimension ratio of the first shallow trench isolation region, the second shallow trench isolation region, the third shallow trench isolation region, the fourth shallow trench isolation region, the fifth shallow trench isolation region and the sixth shallow trench isolation region are 5: 1.
4. the avalanche photodiode applied to the sensing front end of the high-sensitivity optically coupled isolation chip as claimed in claim 1, wherein the lateral dimension of the deep N-well is 2 microns to 200 microns, and the longitudinal dimension of the deep N-well is 0.5 microns to 20 microns.
5. The avalanche photodiode of claim 4, wherein the deep N well has a lateral dimension of 20 μm, the deep N well has a depth of 1.2 μm, the first vertical section has a width of 1 μm, the second vertical section has a width of 1.5 μm, the third vertical section has a width of 1 μm, the first, second, third, fourth, fifth and sixth shallow trench isolation regions have a width of 0.15 μm, the first and second P wells have a width of 6 μm, and the first and second P wells have a depth of 0.46 μm.
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| WO2021203458A1 (en) * | 2020-04-09 | 2021-10-14 | 无锡豪帮高科股份有限公司 | Avalanche photodiode for sensing front end of intelligent high-sensitivity optocoupler isolation chip |
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| WO2021203458A1 (en) * | 2020-04-09 | 2021-10-14 | 无锡豪帮高科股份有限公司 | Avalanche photodiode for sensing front end of intelligent high-sensitivity optocoupler isolation chip |
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