CN116156994A - Design method of transmission electron microscope in-situ loading magnetic functional device with multiple physical fields - Google Patents
Design method of transmission electron microscope in-situ loading magnetic functional device with multiple physical fields Download PDFInfo
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- CN116156994A CN116156994A CN202310058123.XA CN202310058123A CN116156994A CN 116156994 A CN116156994 A CN 116156994A CN 202310058123 A CN202310058123 A CN 202310058123A CN 116156994 A CN116156994 A CN 116156994A
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Abstract
The invention provides a design method of a transmission electron microscope in-situ loading magnetic functional device with multiple physical fields, which comprises the following steps: 1) Preparing a single crystal silicon sheet with the thickness of 140-170nm suitable for a transmission electron microscope by using a focused ion beam-electron beam double-beam electron microscope as a device substrate, 2) preparing Ni with the thickness of 10-30nm on the substrate by using a direct current magnetron sputtering method 80 Fe 20 Polycrystalline soft magnetic film, and making the film into regular triangle magnetic functional unit with side length of 600-1000nm by using focused ion beam etching technology, 3) preparing heavy metal Pt layer with thickness of 20-30nm on the device by using DC magnetron sputtering method to make conductive and protective layer. The combination of the focused ion beam microscopy and the magnetron sputtering can design a magnetic functional device for in-situ loading of a transmission electron microscope with multiple physical fields, and the method can be applied to basic physical research and novel spintronics devices.
Description
Technical Field
The invention relates to the technical field of spintronics, in particular to a design method of a magnetic functional device with multiple physical fields loaded in situ by a transmission electron microscope.
Background
The magnetic vortex is used as a nanoscale magnetic structure with topological protection, and consists of a central vortex core (polarity) and a peripheral in-plane magnetic moment (chirality). Due to the advantages of small size, low energy consumption and high thermal stability, the method can simultaneously store two bits of information through the polarity and the chirality, and has great application potential in future high-density nonvolatile magnetic storage and novel spintronics devices. In order to enable the application of magnetic eddy currents to future spintronics, how to effectively control the generation, annihilation, and switching between different states of magnetic eddy currents has become an important research focus for scientists. Theoretical and experimental studies have shown that magnetic eddy polarity switching can be achieved by externally applied magnetic fields or spin-polarized currents. For chirality, the inversion may be by introducing some asymmetry in the nanomagnet or by using an electric field, etc.
However, the principle type magnetic memory device based on magnetic vortex lacks of corresponding design, and the device needs to be prepared and controlled by multiple physical fields under micro-nano scale. How to apply magnetic eddy currents to spintronics remains a problem to be solved.
Disclosure of Invention
The invention aims at: the magnetic functional device based on the magnetic vortex is designed, and is regulated and controlled by in-situ loading of multiple fields through the transmission electron microscope, and the dynamic process of the magnetic functional device is directly observed, so that the magnetic vortex can be truly applied to future spintronics devices.
Aiming at the technical problems in the prior art, the invention provides a design method of a magnetic functional device with multiple physical fields loaded in situ by a transmission electron microscope, which comprises the following steps:
1) Preparing a monocrystalline silicon slice with the thickness of 140-170nm by using a focused ion beam-electron beam double-beam electron microscope as a device substrate;
2) Preparing Ni with thickness of 10-30nm on the device substrate prepared in the step 1) by using a direct current magnetron sputtering method 80 Fe 20 The polycrystalline soft magnetic film is manufactured into a regular triangle magnetic functional unit with the side length of 600-1000nm by using a focused ion beam etching technology;
3) And preparing a heavy metal Pt layer with the thickness of 20-30nm on the magnetic functional unit by using a direct current magnetron sputtering method to serve as a conductive and protective layer, so as to complete the design of the magnetic functional device with the in-situ loading of multiple physical fields of the transmission electron microscope.
As a preferable scheme of the invention, the DC magnetron sputtering method in the step 2) adopts a magnetron sputtering system with the background vacuum degree of 3 multiplied by 10 -8 -8×10 -8 Torr, the operating pressure is 1.5-3mTorr.
As a preferred embodiment of the present invention, the focused ion beam in step 2) is a gallium ion beam.
As a preferable scheme of the invention, the gallium ion beam parameter in the step 2) is 2-30KeV,10-30pA, the spot diameter is 30-60nm, and the spot distance is 0.3-1.0 times of the spot diameter.
As a preferred embodiment of the present invention, the step 2) of using a focused ion beam etching technique to make the thin film into a magnetic functional unit specifically comprises: and etching the film by a focused ion beam etching technology, and performing pattern design on a device substrate and a magnetic functional unit to prepare the micro-nano magnetic device capable of realizing a storage or logic operation function.
As a preferred embodiment of the present invention, during the etching of step 2), the electron beam imaging system is turned off to avoid interference caused by interaction of electrons and ions.
The invention also provides a magnetic functional device for in-situ loading of the transmission electron microscope designed by the design method.
The invention also provides application of the magnetic functional device in a spintronics device.
As a preferable scheme of the invention, under the transmission electron microscope, pulse current is provided for the magnetic functional device through an external power supply, and the transmission electron microscope is utilized to image and regulate the external field of the magnetic functional device.
Compared with the prior art, the invention has the following beneficial effects:
1) The magnetic functional device can realize the integration of memory calculation under the combined action of a magnetic field and current, and realizes the specific application of magnetic vortex in a spin electronic device.
2) The transmission electron microscope prepared by utilizing the focused ion beam microscopy and magnetron sputtering is used for loading the magnetic functional device with multiple physical fields in situ, and experimental guidance is provided for the application of magnetic vortex to future spin electronics devices.
Drawings
In order to more clearly illustrate the technical solutions of embodiments or conventional techniques of the present application, the drawings required for the descriptions of the embodiments or conventional techniques will be briefly described below, and it is apparent that the drawings in the following description are only some embodiments of the present application, and other drawings may be obtained according to these drawings without inventive effort for a person of ordinary skill in the art.
Fig. 1 is a schematic design diagram and a preparation flow chart of a trapezoidal magnetic functional device according to an embodiment of the present application.
Fig. 2 is a HAADF-STEM image of a trapezoidal magnetic functional device according to an embodiment of the present application.
Fig. 3 is a magnetic domain structure diagram of a trapezoidal magnetic functional device according to an embodiment of the present application.
Detailed Description
The invention is further illustrated and described below in connection with specific embodiments. The described embodiments are merely exemplary of the present disclosure and do not limit the scope. The technical features of the embodiments of the invention can be combined correspondingly on the premise of no mutual conflict.
The focused ion beam microscopy technology can prepare materials in micro-nano scale, and the focused ion beam etching technology can locally etch, so as to perform pattern design on a device substrate and a magnetic functional unit, and prepare the micro-nano magnetic device capable of realizing storage or logic operation function, thereby performing multi-physical field regulation and research under the transmission electron microscope in-situ. The design method not only can be applied to basic physical research, but also provides a device model for the application of topological magnetic structures such as magnetic vortex and the like to future spintronics devices.
Based on the above mechanism, the applicant provides a design method of a magnetic functional device with multiple physical fields loaded in situ by a transmission electron microscope.
Example 1
Referring to fig. 1 to 3, a trapezoidal magnetic functional device according to a first embodiment of the present application will now be described.
The embodiment provides a design method of a transmission electron microscope in-situ loading magnetic functional device with multiple physical fields, which comprises the following steps:
1) A single crystal silicon slice is extracted from the single crystal silicon slice by using a focusing ion beam-electron beam double beam electron microscope (TESCAN LYRA FIB-SEM, TESCAN, czech) and transferred to an in-situ electrical chip, and the device substrate is made by focusing gallium ion beam to be 140nm thick.
2) Preparation of 20nm thick Ni on monocrystalline silicon substrate using DC magnetron sputtering method 80 Fe 20 Polycrystalline soft magnetic film, and magnetron sputtering system (ultra-high vacuum magnetron sputtering coating system, AJA ATC ORION, AJA International, USA) with background vacuum degree of 5×10 -8 Torr, the operating pressure is 3mTorr. Adopting a focused ion beam etching technology to manufacture the film into three regular triangle magnetic vortex units with the interval of 2.5 mu m and the side length of 1 mu m, and manufacturing the substrate into a trapezoid, wherein the specific size is shown in figure 2; the parameters of the focused gallium ion beam were 30KeV voltage and 10pA current,the spot diameter of the gallium ion beam is set to be 30nm, and the spot distance between two adjacent gallium ion beams is 0.3 times of the spot diameter. During etching, the electron beam imaging system is turned off to avoid interference caused by electron and ion interactions.
3) And preparing a heavy metal Pt layer with the thickness of 20nm on the device by using a direct current magnetron sputtering method to serve as a conductive and protective layer, so as to complete the design of the magnetic functional device with the transmission electron microscope loaded with multiple physical fields in situ.
Imaging and current regulation are carried out on the obtained three-vortex trapezoidal magnetic functional device by using a Lorentz transmission electron microscope (Lorentz transmission electron microscope, LTEM), and the defocusing amount is-3 mm.
The polarity and chirality of the magnetic eddy are controlled simultaneously under the combined action of the in-situ magnetic field and the current. In the designed magnetic functional device, magnetic vortex polarity is used as a data storage unit (the polarity is 1 upwards and 0 downwards), and data writing is carried out through a magnetic field generated by the current of the transmission electron microscope objective lens; the chirality is used as a logic operation unit (the clockwise chirality is 1, and the anticlockwise chirality is 0), and different reversible logic operations are realized through pulse currents in a certain size and quantity on the trapezoid substrate. The results show that all three vortex states are anticlockwise chiral (CCW, "1") initially, and FIG. 3 is a magnetic domain structure diagram of the trapezoidal magnetic function device obtained according to the above regulation method, with a scale of 1 μm. As shown in fig. 3A; at critical current-J 0 ＝-1.70×10 11 A/m 2 The rightmost magnetic vortex unit turns clockwise (CW, "0") under the action of (C) as shown in FIG. 3B at the reverse critical current J 0 ＝1.70×10 11 A/m 2 The rightmost cell in turn turns back to the counterclockwise chirality (CCW, "1"). Based on the control of the direction critical current on the magnetic vortex chirality, the designed three-vortex trapezoidal magnetic functional device can realize a reversible logic gate TOFFLOLI.
The foregoing examples illustrate only a few embodiments of the invention and are described in detail herein without thereby limiting the scope of the invention. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit of the invention.
Claims (9)
1. The design method of the transmission electron microscope in-situ loading magnetic functional device with multiple physical fields is characterized by comprising the following steps:
1) Preparing a monocrystalline silicon slice with the thickness of 140-170nm by using a focused ion beam-electron beam double-beam electron microscope as a device substrate;
2) Preparing Ni with thickness of 10-30nm on the device substrate prepared in the step 1) by using a direct current magnetron sputtering method 80 Fe 20 The polycrystalline soft magnetic film is manufactured into a regular triangle magnetic functional unit with the side length of 600-1000nm by using a focused ion beam etching technology;
3) And preparing a heavy metal Pt layer with the thickness of 20-30nm on the magnetic functional unit by using a direct current magnetron sputtering method to serve as a conductive and protective layer, so as to complete the design of the magnetic functional device with the in-situ loading of multiple physical fields of the transmission electron microscope.
2. The method according to claim 1, wherein the DC magnetron sputtering method in step 2) employs a magnetron sputtering system having a background vacuum of 3×10 -8 -8×10 -8 Torr, the operating pressure is 1.5-3mTorr.
3. The method of claim 1, wherein the focused ion beam in step 2) is a gallium ion beam.
4. The method according to claim 3, wherein the gallium ion beam parameters in the step 2) are 2-30KeV,10-30pA, the spot diameter is 30-60nm, and the spot distance is 0.3-1.0 times the spot diameter.
5. The method of claim 1, wherein the forming of the thin film into the magnetic functional unit in step 2) using focused ion beam etching technology comprises: etching the film by a focused ion beam etching technology, and performing pattern design on a device substrate and a magnetic functional unit to prepare the micro-nano magnetic device for realizing the storage or logic operation function.
6. The method of claim 1, wherein during the etching of step 2), the electron beam imaging system is turned off to avoid interference caused by electron and ion interactions.
7. A multi-physical field magnetic function device loaded in situ by a transmission electron microscope designed by the design method according to any one of claims 1-6.
8. Use of a magnetically functional device as claimed in claim 7 in a spintronics device.
9. The use of the magnetic functional device according to claim 8 in spintronics, wherein pulse current is provided to the magnetic functional device by an external power supply under a transmission electron microscope, and imaging and external field regulation are performed on the magnetic functional device by the transmission electron microscope.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310058123.XA CN116156994A (en) | 2023-01-18 | 2023-01-18 | Design method of transmission electron microscope in-situ loading magnetic functional device with multiple physical fields |
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| CN202310058123.XA CN116156994A (en) | 2023-01-18 | 2023-01-18 | Design method of transmission electron microscope in-situ loading magnetic functional device with multiple physical fields |
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| CN116156994A true CN116156994A (en) | 2023-05-23 |
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