CN116154030A - 极紫外至紫外波段的碳化硅雪崩光电探测器及其制备方法 - Google Patents
极紫外至紫外波段的碳化硅雪崩光电探测器及其制备方法 Download PDFInfo
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- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 162
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 160
- 238000002360 preparation method Methods 0.000 title abstract description 8
- 238000010521 absorption reaction Methods 0.000 claims abstract description 93
- 239000000969 carrier Substances 0.000 claims abstract description 25
- 230000005684 electric field Effects 0.000 claims abstract description 18
- 230000000694 effects Effects 0.000 claims abstract description 7
- 239000000758 substrate Substances 0.000 claims description 27
- 238000001259 photo etching Methods 0.000 claims description 24
- 238000005516 engineering process Methods 0.000 claims description 23
- 238000000151 deposition Methods 0.000 claims description 21
- 230000008021 deposition Effects 0.000 claims description 20
- 238000000137 annealing Methods 0.000 claims description 19
- 238000005530 etching Methods 0.000 claims description 17
- 238000002161 passivation Methods 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 238000002955 isolation Methods 0.000 claims description 14
- 238000005468 ion implantation Methods 0.000 claims description 9
- 235000012239 silicon dioxide Nutrition 0.000 claims description 7
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- 238000004140 cleaning Methods 0.000 claims description 6
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 4
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 238000005566 electron beam evaporation Methods 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- 239000003989 dielectric material Substances 0.000 claims description 2
- 230000002708 enhancing effect Effects 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000006096 absorbing agent Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 238000001514 detection method Methods 0.000 abstract description 7
- 230000006798 recombination Effects 0.000 abstract description 5
- 238000005215 recombination Methods 0.000 abstract description 5
- 238000000926 separation method Methods 0.000 abstract description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 10
- 239000008367 deionised water Substances 0.000 description 8
- 229910021641 deionized water Inorganic materials 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 8
- 150000002500 ions Chemical class 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- 238000005406 washing Methods 0.000 description 4
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 230000003213 activating effect Effects 0.000 description 3
- 238000009835 boiling Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000000825 ultraviolet detection Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 201000004569 Blindness Diseases 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
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Abstract
极紫外至紫外波段的碳化硅雪崩光电探测器及其制备方法，涉及紫外光电探测器。包括小面积横纵向的吸收倍增分离(SAM)结构和纵向p‑i‑n结构，p+型欧姆接触层、n型倍增层、n‑型吸收层和n型缓冲层形成横纵向相结合的小面积SAM结构，p‑型吸收层、n‑型吸收层和n型缓冲层形成纵向大面积的p‑i‑n结构。SAM结构和p‑i‑n结构的耗尽层电场相互连接和耦合，p‑i‑n内产生的光生载流子可被电场加速漂移至SAM结构中的n型倍增层进行载流子的雪崩倍增效应，再漂移至p+型欧姆接触层收集形成电流信号，避免光生载流子复合问题，提高光生载流子收集效率，提高极紫外和深紫外波段信号探测效率，获得更高器件响应度。
Description
技术领域
本发明涉及紫外光电探测器，尤其是涉及可提高极紫外和深紫外波段信号的吸收和响应度的一种极紫外至紫外波段的碳化硅雪崩光电探测器及其制备方法。
背景技术
碳化硅雪崩光电探测器能够探测到极微弱的紫外信号，在诸多紫外探测领域都有重要应用，比如火灾预警、环境检测、导弹尾焰监测和紫外保密通信等。与其他材料的半导体紫外探测器相比，碳化硅材料缺陷密度低，外延相对成热，且碳化硅雪崩光电探测器的响应峰值在280nm附近，响应截止波长在390nm，基本对可见光不响应，对于制备单光子探测器有独特优势。与光电倍播管(PMT)等传统的真空紫外探测器件相此，碳化硅雪崩光电探测器具有体积小、成本低、易集成和可见盲等不可替代的优点。因此碳化硅雪崩光电探测器在微弱紫外光探测领域具有很大优势，引起了世界范围内研究人员的广泛关注。
碳化硅作为第三代宽禁带半导体的主要材料，具有宽带隙、高击穿电场、高载流子饱和速率，高热导率等优良特性，因此碳化硅基的紫外光电探测器具有高量子效率、可见盲、抗辐射、抗高温等优良性质。由于紫外信号在半导体内部的吸收系数大，即吸收长度(即传播距离)短(Jiafa Cai,Xiaping Chen,Rongdun Hong,Weifeng Yang,Zhengyun Wu,High-per formance 4H-SiC-based p-i-n ultraviolet photodiode and investigationof its capacitance char acteristics[J].Optics Communications,2014,333:182-186.)，常用的p-i-n结构紫外雪崩光电探测器的高掺杂p+型欧姆接触层对紫外信号特别是极紫外和深紫外波段的信号具有非常强的吸收并转化为光生载流子，然而，由于p+型欧姆接触层的空间耗尽层非常薄，在其区域的光生载流子无法被电场分离收集形成响应电流，而是由于载流子复合效应而消失，降低了器件响应度。因此，攻克p+型欧姆接触层对极紫外和深紫外波段信号的吸收复合效应对器件响应度的抑制便成为碳化硅紫外雪崩光电探测器研究的难点和重点(Wu J,Zhang M,Fu Z,Hong R,Wu Z,Charge layer optimized 4H-SiC SACM avalanche photodiode with low break down voltage and high gain[J].Japanese Journal of Applied Physics,2019,58(10):100913-.)。
发明内容
本发明的目的在于解决传统碳化硅紫外雪崩光电探测器p+层对极紫外和深紫外波段的信号的吸收导致响应度和量子效率降低的缺点，提供一种可提高极紫外和深紫外信号的吸收，进而提高响应度和探测效率的极紫外至紫外波段的碳化硅雪崩光电探测器。
本发明的另一目的在于提供所述极紫外至紫外波段的碳化硅雪崩光电探测器的制备方法。
所述极紫外至紫外波段的碳化硅雪崩光电探测器由一个小面积横纵向相结合的SAM结构和一个大面积纵向的p-i-n结构结合组成，自下而上设有n+型欧姆接触电极、碳化硅高掺杂n+型衬底、碳化硅n型缓冲层、圆柱状碳化硅低掺杂n-型吸收层、圆柱状碳化硅低掺杂p-型吸收层、碳化硅n型倍增层、圆柱管状碳化硅高掺杂p+型欧姆接触层、等离激元、钝化隔离层、p+型欧姆接触电极；
在碳化硅高掺杂n+型衬底的硅面上外延同质的碳化硅n型缓冲层，在碳化硅n型缓冲层的中心向上设圆柱状碳化硅低掺杂n-型吸收层，以n-型吸收层的轴心为中心向上设大面积圆柱状碳化硅低掺杂p-型吸收层，形成p-/n-的pn结，提供具有内建电场的空间耗尽区，用于光生载流子的产生和分离，以n-型吸收层的轴心为中心向外设小面积的碳化硅n型倍增层，在n型倍增层的外侧设更小面积的圆柱管状碳化硅高掺杂p+型欧姆接触层，形成p+/n结，用于提供光生载流子的雪崩倍增区域及实现载流子的收集；在p-型吸收层表面设等离激元用于增强光生载流子的吸收效率，在器件整个上表面(p+型欧姆接触层除外)设钝化隔离层，在n+型衬底的背面设有n+型欧姆接触电极，p+型欧姆接触层上表面设有p+型欧姆接触电极；
所述圆柱管状碳化硅高掺杂p+型欧姆接触层、碳化硅n型倍增层、圆柱状碳化硅低掺杂n-型吸收层和碳化硅n型缓冲层形成小面积横纵向相结合的SAM结构；圆柱状碳化硅低掺杂p-型吸收层、圆柱状碳化硅低掺杂n-型吸收层和碳化硅n型缓冲层形成大面积纵向的p-i-n结构；SAM结构和p-i-n结构的耗尽层电场相互连接和耦合，以使在p-i-n内产生的光生载流子可被电场加速漂移至SAM结构中的n型倍增层进行载流子的雪崩倍增效应，再漂移至p+型欧姆接触层进行收集形成电流信号。
所述碳化硅高掺杂n+型衬底可采用商业型的n+导电衬底，n+型衬底的掺杂浓度量级可为1018/cm3～1019/cm3，厚度可为50μm～500μm；
所述碳化硅n型缓冲层的掺杂浓度量级可为1018/cm3～1019/cm3，厚度可为100nm～1μm。
所述圆柱状碳化硅低掺杂n-型吸收层的的直径为50μm～800μm，厚度为200nm～5μm，掺杂浓度量级为1014/cm3～1016/cm3。
所述圆柱状碳化硅低掺杂p-型吸收层的直径为49μm～799μm，厚度为100nm～1μm，掺杂浓度量级为1015/cm3～1017/cm3。
所述碳化硅n型倍增层的宽度为几百纳米并能保证p+/n结的空间耗尽层穿通到n-型吸收层，宽度为数百纳米，厚度为300nm～1.1μm，掺杂浓度量级为1015/cm3～1016/cm3。
所述圆柱管状碳化硅高掺杂p+型欧姆接触层的宽度为100nm～5μm，厚度为200nm～1μm，掺杂浓度量级为1018/cm3～1019/cm3。
所述等离激元的形状为球形、圆盘形或三角柱形，以更好的与尺寸相配合，等离激元的宽度可为5nm～100nm，厚度可为5nm～100nm，所述等离激元材料为Al、Ag或Au。
所述钝化隔离层可采用二氧化硅、氧化铪或氮化硅等钝化隔离介电材料，钝化隔离层的厚度为几纳米至几十纳米，优选厚度为10nm。
所述极紫外至紫外波段的碳化硅雪崩光电探测器的纵截面宽度可为50μm～800μm。
所述极紫外至紫外波段的碳化硅雪崩光电探测器的制备方法，包括以下步骤：
1)对碳化硅高掺杂n+型衬底进行RCA标准清洗；
2)在n+型衬底的Si面同质外延生长碳化硅n型缓冲层；
3)在碳化硅n型缓冲层上外延生长圆柱状低掺杂n-型吸收层；
4)采用沉积、光刻、刻蚀、离子注入与高温退火技术在n-型吸收层表面居中形成大面积的圆柱状低掺杂p-型吸收层；
5)采用沉积、光刻、刻蚀、离子注入与高温退火技术在n-型吸收层的外侧形成小面积的碳化硅n型倍增层；
6)采用沉积、光刻、刻蚀、离子注入与高温退火技术在n型倍增层外侧形成更小面积的圆柱管状碳化硅高掺杂p+型欧姆接触层；
7)采用沉积、光刻、电子束蒸发与高温退火技术在p-型吸收层上形成等离激元；
8)采用光刻、刻蚀、热氧化与沉积技术在器件整个上表面(p+型欧姆接触层除外)形成二氧化硅钝化隔离层；
9)采用光刻、磁控溅射与退火技术在高掺杂p+型欧姆接触层表面和n+型衬底底部分别制备p+型欧姆接触电极和n+型欧姆接触电极。
现有技术的常规垂直p-i-n结构的碳化硅紫外雪崩光电探测器，要同时满足i层全部被耗尽和良好p型欧姆接触的需求才可以实现高性能的紫外探测，因此表面需要采用高掺杂p+型欧姆接触层。而探测器表面的高掺杂p+型欧姆接触层几乎没有空间耗尽层。根据光在半导体中的指数衰减吸收原理，入射极紫外和深紫外信号大部分都在p+型欧姆接触层被吸收并转化为光生载流子，由于有没有没有空间耗尽层电场的分离，光生载流子无法被有效分离形成电流，而是在p+型欧姆接触层中随机扩散从而被复合湮灭，导致常规垂直p-i-n结构的碳化硅紫外雪崩光电探测器对极紫外和深紫外信号的探测量子效率低下。
本发明设计的极紫外至紫外波段的碳化硅雪崩光电探测器为一个小面积横纵向的吸收倍增分离SAM结构和一个纵向的p-i-n结构相结合的新型雪崩光电探测器。其中，p+型欧姆接触层、n型倍增层、n-型吸收层和n型缓冲层形成横纵向相结合的小面积SAM结构，p-型吸收层、n-型吸收层和n型缓冲层形成纵向大面积的p-i-n结构。SAM结构和p-i-n结构的耗尽层电场相互连接和耦合，使得在p-i-n内产生的光生载流子可被电场加速漂移至SAM结构中的n型倍增层进行载流子的雪崩倍增效应，再漂移至p+型欧姆接触层进行收集形成电流信号。相对传统垂直三明治结构的碳化硅雪崩光电探测器，本发明设计的极紫外至紫外波段的碳化硅雪崩光电探测器可以明显提高极紫外和深紫外波段信号的探测效率。可以避免传统碳化硅雪崩光电探测器在深紫外和极紫外波段由于p+型欧姆接触层的表面缺陷导致的光生载流子复合问题，提高光生载流子的收集效率，可获得更高的器件响应度。
附图说明
图1为本发明实施例所述极紫外至紫外波段的碳化硅雪崩光电探测器的二维剖面示意图。
图2为本发明实施例所述极紫外至紫外波段的碳化硅雪崩光电探测器的三维剖面示意图。
图3为本发明实施例所述极紫外至紫外波段的碳化硅雪崩光电探测器与传统垂直三明治结构的碳化硅雪崩光电探测器在20V工作电压条件下的绝对光谱响应曲线。
具体实施方式
为了使本发明设计的结构更加清楚易懂，以下实施例将结合附图对本发明作进一步的说明。
如图1和2所示，所述极紫外至紫外波段的碳化硅雪崩光电探测器自下而上设有商业型的碳化硅高掺杂n+型衬底1，碳化硅高掺杂n+型衬底1的厚度可为50μm～500μm，掺杂浓度量级可为1018/cm3～1019/cm3，纵截面宽度可为50μm～500μm；在碳化硅高掺杂n+型衬底1的硅面上外延同质的碳化硅n型缓冲层2，碳化硅n型缓冲层2的厚度可为100nm～1μm，掺杂浓度量级可为1018/cm3～1019/cm3；在碳化硅n型缓冲层2的中心向上设圆柱状的碳化硅低掺杂n-型吸收层3，碳化硅低掺杂n-型吸收层3的直径可为50μm～800μm，厚度可为200nm～5μm，掺杂浓度量级1014/cm3～1016/cm3；以碳化硅低掺杂n-型吸收层3的轴心为中心向上设大面积圆柱状的碳化硅低掺杂p-型吸收层6，碳化硅低掺杂p-型吸收层6的直径可为49μm～799μm，厚度可为100nm～1μm，掺杂浓度量级1015/cm3～1017/cm3；以碳化硅低掺杂n-型吸收层3的轴心为中心向外设小面积的碳化硅n型倍增层4，碳化硅n型倍增层4宽度可为数百纳米，厚度可为300nm～1.1μm，掺杂浓度量级可为1016/cm3～1018/cm3；在碳化硅n型倍增层4的外侧设更小面积的圆柱管状的碳化硅高掺杂p+型欧姆接触层5，碳化硅高掺杂p+型欧姆接触层5的宽度可为100nm～5μm，厚度可为200nm～1μm，掺杂浓度量级可为1018～1019/cm3；在碳化硅低掺杂p-型吸收层6的上表面设等离激元10，等离激元10的宽度可为5nm～100nm，厚度可为5nm～100nm，等离激元10的材料可为Al、Au或Ag；在器件整个上表面(p+型欧姆接触层除外)设钝化隔离层7，介电层材料可为二氧化硅，氧化铪和氮化硅等，厚度为几纳米至几十纳米，优选厚度为10nm。在碳化硅高掺杂p+型欧姆接触层5的侧上表面设有p+型欧姆接触电极8，在n+型衬底的背面设有n+型欧姆接触电极9。整个器件为一个小面积横纵向的SAM结构和一个纵向的p-i-n结构相结合的新型雪崩光电探测器。其中，碳化硅高掺杂p+型欧姆接触层5、碳化硅n型倍增层4、碳化硅低掺杂n-型吸收层3和碳化硅n型缓冲层2形成横纵向相结合的小面积SAM结构，碳化硅低掺杂p-型吸收层6、碳化硅低掺杂n-型吸收层3和碳化硅n型缓冲层2形成纵向大面积的p-i-n结构。SAM结构和p-i-n结构的耗尽层电场相互连接和耦合，使得在p-i-n内产生的光生载流子可被电场加速漂移至SAM结构中的n型倍增层4进行载流子的雪崩倍增效应，再漂移至p+型欧姆接触层5进行收集形成电流信号。
所述极紫外至紫外波段的碳化硅雪崩光电探测器的制备方法，包括以下步骤：
1)对碳化硅高掺杂n+型衬底1进行RCA标准清洗；
2)在清洗后的n+型衬底的Si面同质外延生长碳化硅n型缓冲层2；
3)在碳化硅n型缓冲层上外延生长圆柱状低掺杂n-型吸收层3；
4)采用沉积、光刻、刻蚀、离子注入与高温退火技术在n-型吸收层表面居中形成大面积的圆柱状的碳化硅低掺杂p-型吸收层6；
5)采用沉积、光刻、刻蚀、离子注入与高温退火技术在n-型吸收层的外侧形成小面积的碳化硅n型倍增层4；
6)采用沉积、光刻、刻蚀、离子注入与高温退火技术在n型倍增层外侧形成更小面积的圆柱管状碳化硅高掺杂p+型欧姆接触层5；
7)采用沉积、光刻、电子束蒸发与高温退火技术在碳化硅低掺杂p-型吸收层6上形成等离激元10；
8)采用光刻、刻蚀、热氧化与沉积技术在器件整个上表面(p+型欧姆接触层除外)形成二氧化硅钝化隔离层7；
9)采用光刻、磁控溅射与退火技术在高掺杂p+型欧姆接触层表面和n+型衬底底部分别制备p+型欧姆接触电极8和n+型欧姆接触电极9。
以下给出具体制备实施例。
1)对碳化硅高掺杂n+型衬底1样品进行RCA标准清洗，具体步骤如下：
a.依次用甲苯、丙酮和乙醇超声清洗至少两次，再用去热、冷离子水冲洗。
b.采用三号液于250℃下煮20min，用热、冷去离子水冲洗，所述三号液按体积的配比为H2SO4∶H2O2＝4∶1。
c.将样品放入稀释的氢氟酸(按体积比氟化氢∶去离子水＝1∶10)内浸泡3min及以上，再用热、冷去离子水冲洗。
d.将样品放入一号液煮10min及以上，用热、冷去离子水冲洗，所述一号液为按体积的配比为NH3·H2O∶H2O2∶H2O＝1∶1∶4。
e.将样品放入二号液煮10min及以上，用热、冷去离子水冲洗，所述二号液为按体积的配比为HCl∶H2O2∶H2O＝1∶1∶4。
f.将样品放入稀释的氢氟酸(按体积比氟化氢∶去离子水＝1∶10)内浸泡3min及以上，再用热、冷去离子水冲洗，氮气吹干衬底，待用。
2)在RCA标准清洗处理后的碳化硅n+型衬底的(0001)Si面采用同质外延生长掺杂浓度数量级为1018/cm3～1019/cm3，厚度为100nm～1μm的碳化硅n型缓冲层2。
3)在碳化硅n型缓冲层2上外延生长掺杂浓度数量级为1014/cm3～1016/cm3，直径为50μm～800μm，厚度为200nm～5μm的圆柱状碳化硅n-型吸收层3。
4)采用光刻、刻蚀和沉积技术形成掩膜，在此基础上将Al离子注入至圆柱状碳化硅n-型吸收层3，采取高温退火激活Al离子，在圆柱状碳化硅n-型吸收层3表面居中形成大面积的圆柱状碳化硅低掺杂p-型吸收层6，圆柱状碳化硅低掺杂p-型吸收层6的直径可为49μm～799μm，厚度可为100nm～1μm，掺杂浓度量级可为1015/cm3～1017/cm3。
5)采用光刻、刻蚀和沉积技术形成掩膜，在此基础上将Al离子注入至圆柱状碳化硅n-型吸收层3，采取高温退火激活Al离子，在圆柱状碳化硅n-型吸收层3外侧形成小面积的碳化硅n型倍增层4，碳化硅n型倍增层4的宽度可为数百纳米，厚度可为300nm～1.1μm，掺杂浓度量级可为1016/cm3～1018/cm3。
6)采用光刻、刻蚀和沉积技术形成掩膜，在此基础上将Al离子注入至碳化硅n型倍增层4，采取高温退火激活Al离子，在碳化硅n型倍增层4外侧形成更小面积的圆柱管状碳化硅高掺杂p+型欧姆接触层5，圆柱管状碳化硅高掺杂p+型欧姆接触层5的宽度可为100nm～5μm，厚度可为200nm～1μm，掺杂浓度量级可为1018/cm3～1019/cm3。
7)采用光刻、刻蚀和沉积技术形成掩膜，在圆柱状碳化硅低掺杂p-型吸收层6上曝光、显影、冲洗形成金属膜的图形，不要沉积金属的地方有光刻胶作为阻挡层，电子束蒸发沉积5～50nm的金属膜，泡丙酮剥离掉除台面外其他区域的金属，最后通过热退火处理形成有序的等离激元10结构，等离激元10的宽度可为5nm～100nm，厚度可为5nm～100nm。
8)采用光刻、刻蚀和沉积技术形成掩膜，通过化学气相沉积方法生长，在器件整个上表面(p+型欧姆接触层除外)形成钝化隔离介电层7，介电层材料可采用二氧化硅、氧化铪和氮化硅等中的一种，钝化隔离介电层7的厚度可为几纳米至几十纳米。
9)采用光刻工艺，对光刻胶进行曝光显影，使用缓冲氢氟酸腐蚀圆柱管状碳化硅高掺杂p+型欧姆接触层5上部分的氧化层，形成电极窗口，采用磁控溅射工艺制备一层合金，形成p+型欧姆接触电极8，在样品正面制备一层光刻胶用于保护隔离，使用缓冲氢氟酸腐蚀衬底底面氧化层，采用磁控溅射制备合金层，形成n+型欧姆接触电极9，对两个电极p+型欧姆接触电极8和n+型欧姆接触电极9退火，使样品的p+型电极和n+型电极分别与p+型欧姆接触层和n+型衬底形成良好的欧姆接触。
本发明设计的极紫外至紫外波段的碳化硅雪崩光电探测器为一个小面积横纵向的SAM结构和一个纵向的p-i-n结构相结合的新型雪崩光电探测器。其中，p+型欧姆接触层、n型倍增层、n-型吸收层和n型缓冲层形成横纵向相结合的小面积SAM结构，p-型吸收层、n-型吸收层和n型缓冲层形成纵向大面积的p-i-n结构。根据半导体pn结能带理论，具有两端都是低掺杂浓度的pn结，空间耗尽层会同时向p-型吸收层和n-型吸收层两端延伸，在合适的厚度条件下p-型吸收层和n-型吸收层可同时完全耗尽。入射极紫外和深紫外信号极大部分通过p-型吸收层入射到器件内部，在p-型吸收层和n-型吸收层中被吸收转化为光生载流子并被空间耗尽层的电场分离。由于p-型吸收层无法和金属形成有效的欧姆接触电极，因此本发明对碳化硅紫外雪崩光电探测器设计SAM结构和p-i-n结构相结合的一种结构，在器件的低掺杂n-型吸收层表面的其中一端设计一小面积的碳化硅n型倍增层用于提高雪崩增益，在n型倍增层中的外侧设计一小面积的碳化硅高掺杂p+型欧姆接触层用于光生载流子的收集，另外一端设计一大面积的碳化硅低掺杂p-型吸收层用于光生载流子的产生和分离。上述在p-型吸收层和n-型吸收层中形成的光生载流子被大面积p-i-n的空间耗尽层弱电场分离，再被具有p+型欧姆接触层小面积SAM结构中的耗尽层强电场收集并导出到外部电路进行测试分析。实验表明，相对传统垂直三明治结构的碳化硅雪崩光电探测器，本发明设计的极紫外至紫外波段的碳化硅雪崩光电探测器可以明显提高极紫外和深紫外波段信号的探测响应度，如图3。
Claims (10)
1.极紫外至紫外波段的碳化硅雪崩光电探测器，其特征在于由一个小面积横纵向相结合的SAM结构和一个大面积纵向的p-i-n结构结合组成，自下而上设有n+型欧姆接触电极、碳化硅高掺杂n+型衬底、碳化硅n型缓冲层、圆柱状碳化硅低掺杂n-型吸收层、圆柱状碳化硅低掺杂p-型吸收层、碳化硅n型倍增层、圆柱管状碳化硅高掺杂p+型欧姆接触层、等离激元、钝化隔离层、p+型欧姆接触电极；
在碳化硅高掺杂n+型衬底的硅面上外延同质的碳化硅n型缓冲层，在碳化硅n型缓冲层的中心向上设圆柱状碳化硅低掺杂n-型吸收层，以n-型吸收层的轴心为中心向上设大面积圆柱状碳化硅低掺杂p-型吸收层，形成p-/n-的pn结，提供具有内建电场的空间耗尽区，用于光生载流子的产生和分离，以n-型吸收层的轴心为中心向外设小面积的碳化硅n型倍增层，在碳化硅n型倍增层的外侧设更小面积的圆柱管状碳化硅高掺杂p+型欧姆接触层，形成p+/n结，用于提供光生载流子的雪崩倍增区域及实现载流子的收集；在p-型吸收层表面设等离激元用于增强光生载流子的吸收效率，在器件除p+型欧姆接触层外的上表面设钝化隔离层，在n+型衬底的背面设有n+型欧姆接触电极，p+型欧姆接触层上表面设有p+型欧姆接触电极；
所述圆柱管状碳化硅高掺杂p+型欧姆接触层、碳化硅n型倍增层、圆柱状碳化硅低掺杂n-型吸收层和碳化硅n型缓冲层形成小面积横纵向相结合的SAM结构；圆柱状碳化硅低掺杂p-型吸收层、圆柱状碳化硅低掺杂n-型吸收层和碳化硅n型缓冲层形成大面积纵向的p-i-n结构；SAM结构和p-i-n结构的耗尽层电场相互连接和耦合，以使在p-i-n内产生的光生载流子被电场加速漂移至SAM结构中的碳化硅n型倍增层进行载流子的雪崩倍增效应，再漂移至p+型欧姆接触层进行收集形成电流信号。
2.如权利要求1所述极紫外至紫外波段的碳化硅雪崩光电探测器，其特征在于所述碳化硅高掺杂n+型衬底采用商业型的n+导电衬底，n+型衬底的掺杂浓度量级为1018/cm3～1019/cm3，厚度为50μm～500μm。
3.如权利要求1所述极紫外至紫外波段的碳化硅雪崩光电探测器，其特征在于所述碳化硅n型缓冲层的掺杂浓度量级为1018/cm3～1019/cm3，厚度为100nm～1μm。
4.如权利要求1所述极紫外至紫外波段的碳化硅雪崩光电探测器，其特征在于所述圆柱状碳化硅低掺杂n-型吸收层的直径为50μm～800μm，厚度为200nm～5μm，掺杂浓度量级为1014/cm3～1016/cm3。
5.如权利要求1所述极紫外至紫外波段的碳化硅雪崩光电探测器，其特征在于所述圆柱状碳化硅低掺杂p-型吸收层的直径为49μm～799μm，厚度为100nm～1μm，掺杂浓度量级为1015/cm3～1017/cm3。
6.如权利要求1所述极紫外至紫外波段的碳化硅雪崩光电探测器，其特征在于所述碳化硅n型倍增层的宽度为几百纳米并能保证p+/n结的空间耗尽层穿通到n-型吸收层，厚度为300nm～1.1μm，掺杂浓度量级为1016/cm3～1018/cm3。
7.如权利要求1所述极紫外至紫外波段的碳化硅雪崩光电探测器，其特征在于所述圆柱管状碳化硅高掺杂p+型欧姆接触层的宽度为100nm～5μm，厚度为200nm～1μm，掺杂浓度量级为1018/cm3～1019/cm3。
8.如权利要求1所述极紫外至紫外波段的碳化硅雪崩光电探测器，其特征在于所述等离激元的形状为球形、圆盘形或三角柱形，以更好的与尺寸相配合，等离激元的宽度为5nm～100nm，厚度为5nm～100nm，所述等离激元材料为Al、Ag或Au。
9.如权利要求1所述极紫外至紫外波段的碳化硅雪崩光电探测器，其特征在于所述钝化隔离层采用二氧化硅、氧化铪或氮化硅等钝化隔离介电材料，钝化隔离层的厚度为几纳米至几十纳米，优选厚度为10nm。
10.如权利要求1所述极紫外至紫外波段的碳化硅雪崩光电探测器的制备方法，其特征在于包括以下步骤：
1)对碳化硅高掺杂n+型衬底进行RCA标准清洗；
2)在n+型衬底的Si面同质外延生长碳化硅n型缓冲层；
3)在碳化硅n型缓冲层上外延生长圆柱状低掺杂n-型吸收层；
4)采用沉积、光刻、刻蚀、离子注入与高温退火技术在n-型吸收层表面居中形成大面积的圆柱状低掺杂p-型吸收层；
5)采用沉积、光刻、刻蚀、离子注入与高温退火技术在n-型吸收层的外侧形成小面积的碳化硅n型倍增层；
6)采用沉积、光刻、刻蚀、离子注入与高温退火技术在碳化硅n型倍增层外侧形成更小面积的圆柱管状碳化硅高掺杂p+型欧姆接触层；
7)采用沉积、光刻、电子束蒸发与高温退火技术在p-型吸收层表面形成等离激元；
8)采用光刻、刻蚀、热氧化与沉积技术在器件除p+型欧姆接触层外的上表面形成二氧化硅钝化隔离层；
9)采用光刻、磁控溅射与退火技术在高掺杂p+型欧姆接触层表面和n+型衬底底部分别制备p+型欧姆接触电极和n+型欧姆接触电极。
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060202243A1 (en) * | 2005-03-11 | 2006-09-14 | The Boeing Company | Metamorphic avalanche photodetector |
| CN101000936A (zh) * | 2006-12-23 | 2007-07-18 | 厦门大学 | δ掺杂4H－SiC PIN结构紫外光电探测器及其制备方法 |
| CN101030609A (zh) * | 2007-04-04 | 2007-09-05 | 厦门大学 | 一种δ掺杂4H－SiC雪崩紫外光电探测器及其制备方法 |
| DE102007037020B3 (de) * | 2007-08-06 | 2008-08-21 | MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. | Avalanche-Photodiode |
| CN105304748A (zh) * | 2015-09-30 | 2016-02-03 | 厦门大学 | 双工作模式的4H-SiC紫外光电探测器及其制备方法 |
| CN108231919A (zh) * | 2017-12-31 | 2018-06-29 | 厦门大学 | 一种具有石墨烯透明电极的碳化硅雪崩光电探测器 |
| CN111463308A (zh) * | 2020-05-13 | 2020-07-28 | 厦门大学 | 一种碳化硅同轴紫外光电探测器及其制备方法 |
-
2023
- 2023-03-06 CN CN202310205107.9A patent/CN116154030B/zh active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060202243A1 (en) * | 2005-03-11 | 2006-09-14 | The Boeing Company | Metamorphic avalanche photodetector |
| CN101000936A (zh) * | 2006-12-23 | 2007-07-18 | 厦门大学 | δ掺杂4H－SiC PIN结构紫外光电探测器及其制备方法 |
| CN101030609A (zh) * | 2007-04-04 | 2007-09-05 | 厦门大学 | 一种δ掺杂4H－SiC雪崩紫外光电探测器及其制备方法 |
| DE102007037020B3 (de) * | 2007-08-06 | 2008-08-21 | MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. | Avalanche-Photodiode |
| CN105304748A (zh) * | 2015-09-30 | 2016-02-03 | 厦门大学 | 双工作模式的4H-SiC紫外光电探测器及其制备方法 |
| CN108231919A (zh) * | 2017-12-31 | 2018-06-29 | 厦门大学 | 一种具有石墨烯透明电极的碳化硅雪崩光电探测器 |
| CN111463308A (zh) * | 2020-05-13 | 2020-07-28 | 厦门大学 | 一种碳化硅同轴紫外光电探测器及其制备方法 |
Non-Patent Citations (2)
| Title |
|---|
| 朱会丽;陈厦平;吴正云;: "吸收层与倍增层分离的4H-SiC雪崩光电探测器", 半导体学报, no. 02, 8 February 2007 (2007-02-08) * |
| 钟金祥;吴正云;洪荣墩;: "结合雪崩和PIN特性的4H-SiC紫外光电探测器的模拟", 中国新通信, no. 07, 5 April 2015 (2015-04-05) * |
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