CN116133220A - Real-time control system and method suitable for high-dissociation-rate remote plasma source - Google Patents
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Abstract
Description
技术领域Technical Field
本发明涉及控制技术、电力电子技术在半导体制程关键设备中的应用领域，具体的是一种适用于高解离率远程等离子源的实时控制系统及方法。The present invention relates to the application field of control technology and power electronic technology in key equipment of semiconductor manufacturing process, and specifically to a real-time control system and method suitable for a high dissociation rate remote plasma source.
背景技术Background Art
远程等离子源(RemotePlasmaSource,RPS)主要由等离子驱动电源、等离子腔体、阻抗匹配电路、高频耦合磁芯等部分组成，是半导体、芯片制造过程中薄膜沉积设备(CVD、ALD、PVD)配套的核心部件，能够提供芯片制造过程中制程腔室清洁所需的等离子体，直接决定芯片制程的速度和质量以及芯片生产的成败。RPS利用驱动电源激活Ar产生自由电子，撞击通入腔体的NF3从而解离产生F离子。驱动电源提供稳定的高频功率输出，通过磁场耦合在腔体内维持具有稳定浓度和强氧化性的F离子。输出的F离子与制程腔室内沉积物发生反应，产生可抽走的挥发性SiF4气体，从而实现对沉积物的去除。等离子的负阻抗特性以及宽负载阻抗范围，导致高频工作下等离子驱动电源输出特性不稳定。另外，当等离子负荷不断变化时，驱动电源是否能及时调整输出功率对于RPS能否实现气体稳定解离、实现等离子准静态输出也至关重要。较高的解离率意味着同等输入功率情况下，能够获得较高的等离子密度，降低等离子制程时间，提高芯片质量。The remote plasma source (RPS) is mainly composed of a plasma driving power supply, a plasma chamber, an impedance matching circuit, a high-frequency coupling core, etc. It is a core component of thin film deposition equipment (CVD, ALD, PVD) in the semiconductor and chip manufacturing process. It can provide the plasma required for cleaning the process chamber in the chip manufacturing process, which directly determines the speed and quality of the chip process and the success or failure of chip production. RPS uses a driving power supply to activate Ar to generate free electrons, which collide with NF3 introduced into the chamber to dissociate and produce F ions. The driving power supply provides a stable high-frequency power output, and maintains F ions with a stable concentration and strong oxidizing property in the chamber through magnetic field coupling. The output F ions react with the deposits in the process chamber to produce volatile SiF4 gas that can be pumped away, thereby removing the deposits. The negative impedance characteristics of plasma and the wide load impedance range lead to unstable output characteristics of the plasma driving power supply under high-frequency operation. In addition, when the plasma load changes continuously, whether the driving power supply can adjust the output power in time is also crucial for whether the RPS can achieve stable gas dissociation and achieve quasi-static plasma output. A higher dissociation rate means that under the same input power, a higher plasma density can be obtained, which can reduce the plasma process time and improve chip quality.
发明内容Summary of the invention
为解决上述背景技术中提到的不足，本发明的目的在于提供一种适用于高解离率远程等离子源的实时控制系统及方法，解决等离子负荷变化、驱动电源功率偏差等因素造成的解离率不稳定的问题。In order to solve the deficiencies mentioned in the above background technology, the purpose of the present invention is to provide a real-time control system and method suitable for a high dissociation rate remote plasma source, so as to solve the problem of unstable dissociation rate caused by factors such as plasma load changes and driving power supply power deviation.
本发明的目的可以通过以下技术方案实现：一种适用于高解离率远程等离子源的实时控制系统，包括：The object of the present invention can be achieved by the following technical solution: A real-time control system suitable for a high dissociation rate remote plasma source, comprising:
远程等离子源系统运行状态监测单元：用于监测远程等离子源整机系统的实时运行状态和参数，生成远程等离子源系统运行状态监测信号，并且将远程等离子源系统运行状态监测信号发送至双向数据互动单元；Remote plasma source system operation status monitoring unit: used to monitor the real-time operation status and parameters of the remote plasma source system, generate a remote plasma source system operation status monitoring signal, and send the remote plasma source system operation status monitoring signal to the two-way data interaction unit;
等离子负荷监测分析单元：用于实时监测腔体等离子负荷变化，并生成等离子负荷监测信号，并且将等离子负荷监测信号发送至双向数据互动单元；Plasma load monitoring and analysis unit: used to monitor the changes of plasma load in the chamber in real time, generate plasma load monitoring signals, and send the plasma load monitoring signals to the two-way data interaction unit;
双向数据互动单元：用于接收远程等离子源系统运行状态监测信号、等离子负荷监测信号，实现远程等离子源运行状态与仿真系统的实时运行状态双向数据交换，并生成功率偏差调节信号，发送至驱动电源功率动态调节控制单元；Bidirectional data interaction unit: used to receive remote plasma source system operation status monitoring signals and plasma load monitoring signals, realize bidirectional data exchange between the remote plasma source operation status and the real-time operation status of the simulation system, and generate power deviation adjustment signals and send them to the driving power supply power dynamic adjustment control unit;
驱动电源功率动态调节控制单元：用于接收所述双向数据互动单元发送的功率偏差调节信号，实时调节驱动电源的输出功率，并实时反馈驱动电源的点火电压和维持电流；A driving power supply power dynamic adjustment control unit: used to receive the power deviation adjustment signal sent by the two-way data interaction unit, adjust the output power of the driving power supply in real time, and provide real-time feedback of the ignition voltage and the holding current of the driving power supply;
解离率在线实时检测单元：用于在线监控等离子产生的浓度和强度是否稳定，并结合等离子负荷监测信号，实时计算远程等离子源的气体解离率。Dissociation rate online real-time detection unit: used to monitor online whether the concentration and intensity of plasma generated are stable, and combine with the plasma load monitoring signal to calculate the gas dissociation rate of the remote plasma source in real time.
优选地，所述腔体等离子负荷变化包括注入腔体的气体流量和压力，以及等离子体出口流量。Preferably, the chamber plasma load change includes the gas flow rate and pressure injected into the chamber, and the plasma outlet flow rate.
优选地，所述双向数据互动单元根据所记录的历史数据和当前系统运行状态，动态匹配驱动电源输出功率和等离子负荷，并根据解离率监测值，生成功率偏差调节信号，并发送至驱动电源功率动态调节控制单元，进行实时动态调节驱动电源输出功率。Preferably, the two-way data interaction unit dynamically matches the driving power supply output power and the plasma load according to the recorded historical data and the current system operation status, and generates a power deviation adjustment signal according to the dissociation rate monitoring value, and sends it to the driving power supply power dynamic adjustment control unit to perform real-time dynamic adjustment of the driving power supply output power.
优选地，所述双向数据交换过程如下：Preferably, the two-way data exchange process is as follows:
仿真系统实时接收远程等离子源系统运行状态监测信号、等离子负荷监测信号，实时模拟系统运行状态，并根据解离率波动及时调整仿真系统内的驱动电源输出功率；解离率稳定后，进一步的，仿真系统下发功率偏差调节信号至远程等离子源。The simulation system receives the remote plasma source system operation status monitoring signal and plasma load monitoring signal in real time, simulates the system operation status in real time, and adjusts the output power of the driving power supply in the simulation system in time according to the dissociation rate fluctuation; after the dissociation rate is stable, the simulation system further sends a power deviation adjustment signal to the remote plasma source.
优选地，所述解离率波动阀值为±0.5％。Preferably, the dissociation rate fluctuation threshold is ±0.5%.
优选地，所述气体解离率的计算过程包括：Preferably, the calculation process of the gas dissociation rate includes:
在出口处设置目标等离子体探测装置，用于探测目标等离子体的浓度和强度，并结合注入腔体的气体流量和压力数据，从而进一步计算得到气体解离率。A target plasma detection device is set at the outlet to detect the concentration and intensity of the target plasma, and combined with the gas flow and pressure data injected into the cavity, the gas dissociation rate is further calculated.
优选地，一种适用于高解离率远程等离子源的实时控制方法，方法包括以下步骤：Preferably, a real-time control method for a high dissociation rate remote plasma source comprises the following steps:
导入等离子源初始变量、实时运行状态信号和参数；按照实时等离子负荷以及设定的解离率参考值λref，确定驱动电源初始输出功率；Importing the initial variables, real-time operation status signals and parameters of the plasma source; determining the initial output power of the driving power supply according to the real-time plasma load and the set dissociation rate reference value λ ref ;
获取t-1时刻气体解离率，并与解离率参考值λref进行实时比较；Obtain the gas dissociation rate at time t-1, and compare it with the dissociation rate reference value λ ref in real time;
如果t-1时刻解离率不低于λref，则驱动电源初始输出功率不变且恒定输出；如果t-1时刻解离率低于λref，则系统分别对驱动电源功率偏差、等离子负荷偏差进行检测，获得偏差信号；根据偏差信号重新进行计算、仿真，并进一步获得驱动电源功率偏差调节信号
系统根据预设采样间隔时间，重复以上步骤。The system repeats the above steps according to the preset sampling interval.
优选地，所述驱动电源初始输出功率根据实时等离子负荷以及设定的解离率参考值λref，由双向数据互动单元的历史数据记录确定。Preferably, the initial output power of the driving power supply is determined by the historical data record of the two-way data interaction unit according to the real-time plasma load and the set dissociation rate reference value λ ref .
一种设备，包括：A device comprising:
一个或多个处理器；one or more processors;
存储器，用于存储一个或多个程序；A memory for storing one or more programs;
当一个或多个所述程序被一个或多个所述处理器执行，使得一个或多个所述处理器实现如上所述的一种适用于高解离率远程等离子源的实时控制系统。When one or more of the programs are executed by one or more of the processors, the one or more processors implement a real-time control system applicable to a high dissociation rate remote plasma source as described above.
一种包含计算机可执行指令的存储介质，所述计算机可执行指令在由计算机处理器执行时用于执行如上所述的一种适用于高解离率远程等离子源的实时控制系统。A storage medium containing computer executable instructions, which are used to execute a real-time control system applicable to a high dissociation rate remote plasma source as described above when executed by a computer processor.
本发明的有益效果：Beneficial effects of the present invention:
本发明当驱动功率出现偏差或等离子负荷变化时，系统可以根据历史匹配值以及当前运行状态，较快给出驱动电源输出功率动态调节信号，从而实现气体的稳定解离，等离子体的持续稳定输出，减少远程等离子源解离率的波动范围；可根据不同制程需求、不同气体，在线实时调整系统运行状态。When the driving power deviates or the plasma load changes, the system can quickly give a dynamic adjustment signal for the output power of the driving power supply according to the historical matching value and the current operating status, thereby achieving stable dissociation of the gas and continuous and stable output of the plasma, and reducing the fluctuation range of the dissociation rate of the remote plasma source; the system operating status can be adjusted online in real time according to different process requirements and different gases.
附图说明BRIEF DESCRIPTION OF THE DRAWINGS
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图；In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, for those skilled in the art, other drawings can be obtained based on these drawings without creative work.
图1是本发明结构原理示意图；Fig. 1 is a schematic diagram of the structural principle of the present invention;
图2是本发明流程示意图。FIG. 2 is a schematic diagram of the process of the present invention.
具体实施方式DETAILED DESCRIPTION
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其它实施例，都属于本发明保护的范围。The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.
如图1所示，主要由等离子驱动电源、等离子腔体、阻抗匹配电路、高频耦合磁芯等部分组成。运行原理阐述如下：利用驱动电源激活Ar产生自由电子，撞击通入腔体的NF3从而解离产生F离子。驱动电源提供稳定的高频功率输出，通过磁场耦合在腔体内维持具有稳定浓度和强氧化性的F离子。输出的F离子与制程腔室内沉积物发生反应，产生可抽走的挥发性SiF4气体，从而实现对沉积物的去除。As shown in Figure 1, it is mainly composed of a plasma driving power supply, a plasma chamber, an impedance matching circuit, a high-frequency coupling magnetic core, and other parts. The operating principle is described as follows: the driving power supply is used to activate Ar to generate free electrons, which collide with the NF3 introduced into the chamber to dissociate and generate F ions. The driving power supply provides a stable high-frequency power output, and maintains F ions with a stable concentration and strong oxidizing property in the chamber through magnetic field coupling. The output F ions react with the deposits in the process chamber to produce volatile SiF4 gas that can be extracted, thereby achieving the removal of the deposits.
一种适用于高解离率远程等离子源的实时控制系统，包括：A real-time control system for a high dissociation rate remote plasma source, comprising:
远程等离子源系统运行状态监测单元：用于监测远程等离子源整机系统的实时运行状态和参数，生成远程等离子源系统运行状态监测信号，并且将远程等离子源系统运行状态监测信号发送至双向数据互动单元；Remote plasma source system operation status monitoring unit: used to monitor the real-time operation status and parameters of the remote plasma source system, generate a remote plasma source system operation status monitoring signal, and send the remote plasma source system operation status monitoring signal to the two-way data interaction unit;
等离子负荷监测分析单元：用于实时监测腔体等离子负荷变化，并生成等离子负荷监测信号，并且将等离子负荷监测信号发送至双向数据互动单元；Plasma load monitoring and analysis unit: used to monitor the changes of plasma load in the chamber in real time, generate plasma load monitoring signals, and send the plasma load monitoring signals to the two-way data interaction unit;
需要进一步进行说明的是，在具体实施过程中，等离子负荷监测分析单元实时监测腔体等离子负荷变化的过程具体为：等离子负荷变化监测，主要就是监测注入腔体的气体流量和压力，以及等离子体出口流量，气体入口处有进气监测装置，出口处有目标等离子体探测装置。目标等离子体探测装置用来检测等离子产生的浓度和强度。It is necessary to further explain that, in the specific implementation process, the plasma load monitoring and analysis unit monitors the changes of the plasma load in the cavity in real time as follows: The plasma load change monitoring mainly monitors the gas flow and pressure injected into the cavity, as well as the plasma outlet flow. There is an intake monitoring device at the gas inlet and a target plasma detection device at the outlet. The target plasma detection device is used to detect the concentration and intensity of plasma generation.
双向数据互动单元：用于接收远程等离子源系统运行状态监测信号、等离子负荷监测信号，实现远程等离子源运行状态与仿真系统的实时运行状态双向数据交换，并生成功率偏差调节信号，发送至驱动电源功率动态调节控制单元；Bidirectional data interaction unit: used to receive remote plasma source system operation status monitoring signals and plasma load monitoring signals, realize bidirectional data exchange between the remote plasma source operation status and the real-time operation status of the simulation system, and generate power deviation adjustment signals and send them to the driving power supply power dynamic adjustment control unit;
需要进一步进行说明的是，在具体实施过程中，双向数据互动单元接收远程等离子源系统运行状态监测信号、等离子负荷监测信号，实现远程等离子源运行状态与仿真系统的实时运行状态双向数据交换的过程具体为：仿真系统实时接收远程等离子源系统运行状态监测信号、等离子负荷监测信号，实时模拟系统运行状态，并根据解离率波动及时调整仿真系统内的驱动电源输出功率；解离率稳定后，进一步的，仿真系统下发功率偏差调节信号至远程等离子源，所述解离率波动阀值为±0.5％。It needs to be further explained that, in the specific implementation process, the two-way data interaction unit receives the remote plasma source system operation status monitoring signal and the plasma load monitoring signal, and realizes the two-way data exchange between the remote plasma source operation status and the real-time operation status of the simulation system. Specifically, the simulation system receives the remote plasma source system operation status monitoring signal and the plasma load monitoring signal in real time, simulates the system operation status in real time, and adjusts the output power of the driving power supply in the simulation system in time according to the dissociation rate fluctuation; after the dissociation rate is stable, the simulation system further sends a power deviation adjustment signal to the remote plasma source, and the dissociation rate fluctuation threshold is ±0.5%.
驱动电源功率动态调节控制单元：用于接收所述双向数据互动单元发送的功率偏差调节信号，实时调节驱动电源的输出功率，并实时反馈驱动电源的点火电压和维持电流；A driving power supply power dynamic adjustment control unit: used to receive the power deviation adjustment signal sent by the two-way data interaction unit, adjust the output power of the driving power supply in real time, and provide real-time feedback of the ignition voltage and the holding current of the driving power supply;
解离率在线实时检测单元：用于在线监控等离子产生的浓度和强度是否稳定，并结合等离子负荷监测信号，实时计算远程等离子源的气体解离率。Dissociation rate online real-time detection unit: used to monitor online whether the concentration and intensity of plasma generated are stable, and combine with the plasma load monitoring signal to calculate the gas dissociation rate of the remote plasma source in real time.
需要进一步进行说明的是，在具体实施过程中，解离率在线实时检测单元在线监控等离子产生的浓度和强度是否稳定，并结合等离子负荷监测信号，实时计算远程等离子源的气体解离率的过程具体为：It should be further explained that, in the specific implementation process, the online real-time detection unit of the dissociation rate monitors whether the concentration and intensity of the plasma generated are stable online, and combines the plasma load monitoring signal to calculate the gas dissociation rate of the remote plasma source in real time. The specific process is:
在出口处设置目标等离子体探测装置，用于探测目标等离子体的浓度和强度，并结合注入腔体的气体流量和压力数据，从而进一步计算得到气体解离率。A target plasma detection device is set at the outlet to detect the concentration and intensity of the target plasma, and combined with the gas flow and pressure data injected into the cavity, the gas dissociation rate is further calculated.
所述腔体等离子负荷变化包括注入腔体的气体流量和压力，以及等离子体出口流量。The chamber plasma load variation includes the gas flow rate and pressure injected into the chamber, and the plasma outlet flow rate.
所述双向数据互动单元根据所记录的历史数据和当前系统运行状态，动态匹配驱动电源输出功率和等离子负荷，并根据解离率监测值，生成功率偏差调节信号，并发送至驱动电源功率动态调节控制单元，进行实时动态调节驱动电源输出功率。The two-way data interaction unit dynamically matches the driving power supply output power and the plasma load according to the recorded historical data and the current system operation status, and generates a power deviation adjustment signal according to the dissociation rate monitoring value, and sends it to the driving power supply power dynamic adjustment control unit to perform real-time dynamic adjustment of the driving power supply output power.
如图2所示，一种适用于高解离率远程等离子源的实时控制方法，方法包括以下步骤：As shown in FIG2 , a real-time control method for a high dissociation rate remote plasma source comprises the following steps:
导入等离子源初始变量、实时运行状态信号和参数；按照实时等离子负荷以及设定的解离率参考值λref，确定驱动电源初始输出功率；Importing the initial variables, real-time operation status signals and parameters of the plasma source; determining the initial output power of the driving power supply according to the real-time plasma load and the set dissociation rate reference value λ ref ;
获取t-1时刻气体解离率，并与解离率参考值λref进行实时比较；Obtain the gas dissociation rate at time t-1, and compare it with the dissociation rate reference value λ ref in real time;
如果t-1时刻解离率不低于λref，则驱动电源初始输出功率不变且恒定输出；如果t-1时刻解离率低于λref，则系统分别对驱动电源功率偏差、等离子负荷偏差进行检测，获得偏差信号；根据偏差信号重新进行计算、仿真，并进一步获得驱动电源功率偏差调节信号
系统根据预设采样间隔时间，重复以上步骤。The system repeats the above steps according to the preset sampling interval.
基于同一种发明构思，本发明还提供一种计算机设备，该计算机设备包括：一个或多个处理器，以及存储器，用于存储一个或多个计算机程序；程序包括程序指令，处理器用于执行存储器存储的程序指令。处理器可能是中央处理单元(CentralProcessingUnit，CPU)，还可以是其他通用处理器、数字信号处理器(DigitalSignalProcessor、DSP)、专用集成电路(ApplicationSpecificIntegrated Circuit，ASIC)、现场可编程门阵列(Field-ProgrammableGateArray，FPGA)或者其他可编程逻辑器件、分立门或者晶体管逻辑器件、分立硬件组件等，其是终端的计算核心以及控制核心，其用于实现一条或一条以上指令，具体用于加载并执行计算机存储介质内一条或一条以上指令从而实现上述方法。Based on the same inventive concept, the present invention also provides a computer device, which includes: one or more processors, and a memory for storing one or more computer programs; the program includes program instructions, and the processor is used to execute the program instructions stored in the memory. The processor may be a central processing unit (CPU), or other general-purpose processors, digital signal processors (DSP), application-specific integrated circuits (ASIC), field-programmable gate arrays (FPGA) or other programmable logic devices, discrete gates or transistor logic devices, discrete hardware components, etc. It is the computing core and control core of the terminal, which is used to implement one or more instructions, specifically for loading and executing one or more instructions in a computer storage medium to implement the above method.
需要进一步进行说明的是，基于同一种发明构思，本发明还提供一种计算机存储介质，该存储介质上存储有计算机程序，所述计算机程序被处理器运行时执行上述方法。该存储介质可以采用一个或多个计算机可读的介质的任意组合。计算机可读介质可以是计算机可读信号介质或者计算机可读存储介质。计算机可读存储介质例如可以是但不限于电、磁、光、电、磁、红外线、或半导体的系统、装置或器件，或者任意以上的组合。计算机可读存储介质的更具体的例子(非穷举的列表)包括：具有一个或多个导线的电连接、便携式计算机磁盘、硬盘、随机存取存储器(RAM)、只读存储器(ROM)、可擦式可编程只读存储器(EPROM或闪存)、光纤、便携式紧凑磁盘只读存储器(CD-ROM)、光存储器件、磁存储器件、或者上述的任意合适的组合。在本发明中，计算机可读存储介质可以是任何包含或存储程序的有形介质，该程序可以被指令执行系统、装置或者器件使用或者与其结合使用。It needs to be further explained that, based on the same inventive concept, the present invention also provides a computer storage medium, on which a computer program is stored, and the computer program is executed by the processor when it is run. The storage medium can adopt any combination of one or more computer-readable media. The computer-readable medium can be a computer-readable signal medium or a computer-readable storage medium. The computer-readable storage medium can be, for example, but not limited to, an electrical, magnetic, optical, electrical, magnetic, infrared, or semiconductor system, device or device, or any combination of the above. More specific examples (non-exhaustive list) of computer-readable storage media include: an electrical connection with one or more wires, a portable computer disk, a hard disk, a random access memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), an optical fiber, a portable compact disk read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination of the above. In the present invention, a computer-readable storage medium can be any tangible medium containing or storing a program, which can be used by an instruction execution system, device or device or used in combination with it.
在本说明书的描述中，参考术语“一个实施例”、“示例”、“具体示例”等的描述意指结合该实施例或示例描述的具体特征、结构、材料或者特点包含于本公开的至少一个实施例或示例中。在本说明书中，对上述术语的示意性表述不一定指的是相同的实施例或示例。而且，描述的具体特征、结构、材料或者特点可以在任何的一个或多个实施例或示例中以合适的方式结合。In the description of this specification, the description with reference to the terms "one embodiment", "example", "specific example", etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present disclosure. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner.
以上显示和描述了本公开的基本原理、主要特征和本公开的优点。本行业的技术人员应该了解，本公开不受上述实施例的限制，上述实施例和说明书中描述的只是说明本公开的原理，在不脱离本公开精神和范围的前提下，本公开还会有各种变化和改进，这些变化和改进都落入要求保护的本公开范围内容。The above shows and describes the basic principles, main features and advantages of the present disclosure. Those skilled in the art should understand that the present disclosure is not limited by the above embodiments, and the above embodiments and descriptions are only for explaining the principles of the present disclosure. Without departing from the spirit and scope of the present disclosure, the present disclosure may have various changes and improvements, and these changes and improvements all fall within the scope of the present disclosure to be protected.
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Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050019962A1 (en) * | 2003-07-16 | 2005-01-27 | Sony Coporation | Plasma monitoring method, plasma processing method, method of manufacturing semiconductor device, and plasma processing system |
| JP2005257651A (en) * | 2004-03-15 | 2005-09-22 | Omron Corp | Plasma measuring instrument and plasma measuring method |
| KR20060093490A (en) * | 2005-02-22 | 2006-08-25 | 주성엔지니어링(주) | Plasma generator and plasma ignition method using same |
| KR20090052819A (en) * | 2007-11-21 | 2009-05-26 | 도쿄엘렉트론가부시키가이샤 | Inductively coupled plasma processing apparatus and method |
| KR20140005083A (en) * | 2012-07-03 | 2014-01-14 | 주식회사 플라즈마트 | Plasma generation apparatus and plasma generation method |
| KR20150001250A (en) * | 2013-06-27 | 2015-01-06 | 주식회사 에스알티 | Detecting and Controll System for Remote Plasma system |
| JP2015229783A (en) * | 2014-06-04 | 2015-12-21 | 住友重機械工業株式会社 | Film deposition apparatus |
| CN114501764A (en) * | 2022-01-26 | 2022-05-13 | 江苏神州半导体科技有限公司 | Gas dissociation circuit control device and system based on multi-coil coupling |
| CN115172131A (en) * | 2022-07-14 | 2022-10-11 | 广东工业大学 | Novel high ionization rate plasma preparation cavity |
| CN115499991A (en) * | 2022-10-13 | 2022-12-20 | 北京环境特性研究所 | Measurement and calibration method and device for ionization degree of inductively coupled plasma |
| CN115665961A (en) * | 2022-09-07 | 2023-01-31 | 上海理工大学 | Multifunctional in-situ microwave plasma generating device and application thereof |
-
2023
- 2023-02-21 CN CN202310140863.8A patent/CN116133220B/en active Active
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050019962A1 (en) * | 2003-07-16 | 2005-01-27 | Sony Coporation | Plasma monitoring method, plasma processing method, method of manufacturing semiconductor device, and plasma processing system |
| JP2005257651A (en) * | 2004-03-15 | 2005-09-22 | Omron Corp | Plasma measuring instrument and plasma measuring method |
| KR20060093490A (en) * | 2005-02-22 | 2006-08-25 | 주성엔지니어링(주) | Plasma generator and plasma ignition method using same |
| KR20090052819A (en) * | 2007-11-21 | 2009-05-26 | 도쿄엘렉트론가부시키가이샤 | Inductively coupled plasma processing apparatus and method |
| KR20140005083A (en) * | 2012-07-03 | 2014-01-14 | 주식회사 플라즈마트 | Plasma generation apparatus and plasma generation method |
| KR20150001250A (en) * | 2013-06-27 | 2015-01-06 | 주식회사 에스알티 | Detecting and Controll System for Remote Plasma system |
| JP2015229783A (en) * | 2014-06-04 | 2015-12-21 | 住友重機械工業株式会社 | Film deposition apparatus |
| CN114501764A (en) * | 2022-01-26 | 2022-05-13 | 江苏神州半导体科技有限公司 | Gas dissociation circuit control device and system based on multi-coil coupling |
| CN115172131A (en) * | 2022-07-14 | 2022-10-11 | 广东工业大学 | Novel high ionization rate plasma preparation cavity |
| CN115665961A (en) * | 2022-09-07 | 2023-01-31 | 上海理工大学 | Multifunctional in-situ microwave plasma generating device and application thereof |
| CN115499991A (en) * | 2022-10-13 | 2022-12-20 | 北京环境特性研究所 | Measurement and calibration method and device for ionization degree of inductively coupled plasma |
Non-Patent Citations (1)
| Title |
|---|
| 汪继宗;黄继强;黄军芬;薛龙;郭雯雯;: "焊接电弧等离子体热学特性测量方法的研究进展", 焊接, no. 10 * |
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