CN116133220B - Real-time control system and method suitable for high-dissociation-rate remote plasma source - Google Patents
Real-time control system and method suitable for high-dissociation-rate remote plasma source Download PDFInfo
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- CN116133220B CN116133220B CN202310140863.8A CN202310140863A CN116133220B CN 116133220 B CN116133220 B CN 116133220B CN 202310140863 A CN202310140863 A CN 202310140863A CN 116133220 B CN116133220 B CN 116133220B
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- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
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- H—ELECTRICITY
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- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/0006—Investigating plasma, e.g. measuring the degree of ionisation or the electron temperature
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Abstract
The invention discloses a real-time control system and a real-time control method suitable for a high dissociation rate remote plasma source, which relate to the application fields of control technology and power electronic technology in key equipment of semiconductor manufacturing, and comprise a remote plasma source system running state monitoring unit, a plasma load monitoring analysis unit, a bidirectional data interaction unit, a dissociation rate online real-time detection unit and a driving power supply power dynamic regulation control unit; when the plasma load changes or the driving power deviates, the system can give out the dynamic adjusting signal of the output power of the driving power supply faster according to the historical matching value and the current running state, thereby realizing stable dissociation of gas and continuous stable output of plasma, reducing the fluctuation range of the dissociation rate of a remote plasma source and having good feasibility and practical value.
Description
Technical Field
The invention relates to the application fields of control technology and power electronic technology in semiconductor manufacturing key equipment, in particular to a real-time control system and method suitable for a high-dissociation-rate remote plasma source.
Background
The remote plasma source (RemotePlasmaSource, RPS) mainly comprises a plasma driving power supply, a plasma cavity, an impedance matching circuit, a high-frequency coupling magnetic core and the like, is a core component matched with thin film deposition equipment (CVD, ALD, PVD) in the manufacturing process of semiconductors and chips, can provide plasma required by cleaning a process chamber in the manufacturing process of the chips, and directly determines the speed and quality of the chip process and the success or failure of chip production. The RPS activates Ar with a driving power source to generate free electrons that strike NF3 that is introduced into the chamber to dissociate to generate F ions. The driving power supply provides stable high-frequency power output, and F ions with stable concentration and strong oxidability are maintained in the cavity through magnetic field coupling. The output F ions react with the sediment in the process chamber to generate volatile SiF4 gas which can be pumped away, thereby removing the sediment. The negative impedance characteristic of the plasma and the wide load impedance range cause unstable output characteristics of the plasma driving power supply under high frequency operation. In addition, when the plasma load is continuously changed, whether the driving power supply can timely adjust the output power is also important to whether the RPS can realize stable dissociation of gas and realize quasi-static output of plasma. The higher dissociation rate means that higher plasma density can be obtained under the condition of the same input power, the plasma processing time is reduced, and the chip quality is improved.
Disclosure of Invention
In order to solve the above-mentioned shortcomings in the background art, the present invention aims to provide a real-time control system and method suitable for a high dissociation rate remote plasma source, which solves the problem of unstable dissociation rate caused by factors such as plasma load variation, driving power supply power deviation, etc.
The aim of the invention can be achieved by the following technical scheme: a real-time control system for a high dissociation rate remote plasma source, comprising:
remote plasma source system operation state monitoring unit: the system comprises a bidirectional data interaction unit, a remote plasma source system operation state monitoring unit and a remote plasma source system operation state monitoring unit, wherein the remote plasma source system operation state monitoring unit is used for monitoring real-time operation states and parameters of the remote plasma source complete machine system, generating a remote plasma source system operation state monitoring signal and sending the remote plasma source system operation state monitoring signal to the bidirectional data interaction unit;
plasma load monitoring and analyzing unit: the system is used for monitoring the plasma load change of the cavity in real time, generating a plasma load monitoring signal and sending the plasma load monitoring signal to the bidirectional data interaction unit;
the two-way data interaction unit: the power deviation adjusting unit is used for receiving the remote plasma source system running state monitoring signal and the plasma load monitoring signal, realizing the bidirectional data exchange between the remote plasma source running state and the real-time running state of the simulation system, generating a power deviation adjusting signal and sending the power deviation adjusting signal to the driving power supply power dynamic adjusting control unit;
the driving power supply power dynamic regulation control unit: the power deviation adjusting device is used for receiving the power deviation adjusting signal sent by the two-way data interaction unit, adjusting the output power of the driving power supply in real time and feeding back the ignition voltage and the maintaining current of the driving power supply in real time;
dissociation rate on-line real-time detection unit: the method is used for monitoring whether the concentration and the intensity generated by the plasma are stable or not on line, and calculating the gas dissociation rate of the remote plasma source in real time by combining the plasma load monitoring signal.
Preferably, the chamber plasma load variation includes gas flow and pressure injected into the chamber, and plasma outlet flow.
Preferably, the bidirectional data interaction unit dynamically matches the output power of the driving power supply and the plasma load according to the recorded historical data and the current system running state, generates a power deviation adjusting signal according to the dissociation rate monitoring value, and sends the power deviation adjusting signal to the driving power supply power dynamic adjusting control unit to dynamically adjust the output power of the driving power supply in real time.
Preferably, the bidirectional data exchange process is as follows:
the simulation system receives the remote plasma source system running state monitoring signal and the plasma load monitoring signal in real time, simulates the system running state in real time, and timely adjusts the output power of a driving power supply in the simulation system according to the fluctuation of the dissociation rate; after the dissociation rate is stable, further, the simulation system transmits a power deviation adjustment signal to the remote plasma source.
Preferably, the dissociation rate fluctuation threshold is ±0.5%.
Preferably, the calculating process of the gas dissociation rate includes:
and a target plasma detection device is arranged at the outlet and is used for detecting the concentration and the intensity of target plasma and combining the gas flow and the pressure data of the injected cavity so as to further calculate the gas dissociation rate.
Preferably, a real-time control method suitable for a high dissociation rate remote plasma source, the method comprising the steps of:
leading in the initial variable, real-time running state signal and parameter of the plasma source; according to the real-time plasma load and the set dissociation rate reference value lambda ref Determining the initial output power of a driving power supply;
acquiring the dissociation rate of the gas at the time t-1 and comparing the dissociation rate with a dissociation rate reference value lambda ref Comparing in real time;
if the dissociation rate at time t-1 is not lower than lambda ref The initial output power of the driving power supply is unchanged and is constantly output; if the dissociation rate at time t-1 is lower than lambda ref The system detects the power deviation of the driving power supply and the plasma load deviation respectively to obtain deviation signals; re-calculating and simulating according to the deviation signal, and further obtaining a driving power supply power deviation regulating signal
The system repeats the above steps according to the preset sampling interval time.
Preferably, the initial output power of the driving power supply is based on the real-time plasma load and the set dissociation rate reference value lambda ref Is determined by the historical data record of the bidirectional data interaction unit.
An apparatus, comprising:
one or more processors;
a memory for storing one or more programs;
when executed by one or more of the processors, causes the one or more processors to implement a real-time control system suitable for high dissociation rate remote plasma sources as described above.
A storage medium containing computer executable instructions which, when executed by a computer processor, are used to perform a real-time control system suitable for a high dissociation rate remote plasma source as described above.
The invention has the beneficial effects that:
when the driving power is deviated or the plasma load is changed, the system can give out the dynamic adjusting signal of the output power of the driving power supply faster according to the historical matching value and the current running state, thereby realizing stable dissociation of gas, continuous and stable output of plasma and reducing the fluctuation range of the dissociation rate of a remote plasma source; the running state of the system can be adjusted on line in real time according to different process requirements and different gases.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described, and it will be obvious to those skilled in the art that other drawings can be obtained according to these drawings without inventive effort;
FIG. 1 is a schematic diagram of the structural principles of the present invention;
fig. 2 is a schematic flow chart of the present invention.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
As shown in fig. 1, the plasma power supply mainly comprises a plasma driving power supply, a plasma cavity, an impedance matching circuit, a high-frequency coupling magnetic core and the like. The principle of operation is illustrated as follows: ar is activated by a driving power supply to generate free electrons, and NF3 which is introduced into the cavity is impacted to be dissociated to generate F ions. The driving power supply provides stable high-frequency power output, and F ions with stable concentration and strong oxidability are maintained in the cavity through magnetic field coupling. The output F ions react with the sediment in the process chamber to generate volatile SiF4 gas which can be pumped away, thereby removing the sediment.
A real-time control system for a high dissociation rate remote plasma source, comprising:
remote plasma source system operation state monitoring unit: the system comprises a bidirectional data interaction unit, a remote plasma source system operation state monitoring unit and a remote plasma source system operation state monitoring unit, wherein the remote plasma source system operation state monitoring unit is used for monitoring real-time operation states and parameters of the remote plasma source complete machine system, generating a remote plasma source system operation state monitoring signal and sending the remote plasma source system operation state monitoring signal to the bidirectional data interaction unit;
plasma load monitoring and analyzing unit: the system is used for monitoring the plasma load change of the cavity in real time, generating a plasma load monitoring signal and sending the plasma load monitoring signal to the bidirectional data interaction unit;
it should be further described that, in the specific implementation process, the process of monitoring the plasma load change of the cavity in real time by the plasma load monitoring and analyzing unit specifically includes: the plasma load change monitoring mainly monitors the gas flow and pressure injected into the cavity and the plasma outlet flow, the gas inlet is provided with an air inlet monitoring device, and the outlet is provided with a target plasma detecting device. The target plasma detection device is used for detecting the concentration and intensity of plasma generation.
The two-way data interaction unit: the power deviation adjusting unit is used for receiving the remote plasma source system running state monitoring signal and the plasma load monitoring signal, realizing the bidirectional data exchange between the remote plasma source running state and the real-time running state of the simulation system, generating a power deviation adjusting signal and sending the power deviation adjusting signal to the driving power supply power dynamic adjusting control unit;
it should be further described that, in the specific implementation process, the bidirectional data interaction unit receives the remote plasma source system operation state monitoring signal and the plasma load monitoring signal, and the process of implementing the real-time operation state bidirectional data exchange between the remote plasma source operation state and the simulation system is specifically as follows: the simulation system receives the remote plasma source system running state monitoring signal and the plasma load monitoring signal in real time, simulates the system running state in real time, and timely adjusts the output power of a driving power supply in the simulation system according to the fluctuation of the dissociation rate; after the dissociation rate is stable, further, the simulation system transmits a power deviation adjusting signal to the remote plasma source, and the fluctuation threshold of the dissociation rate is +/-0.5%.
The driving power supply power dynamic regulation control unit: the power deviation adjusting device is used for receiving the power deviation adjusting signal sent by the two-way data interaction unit, adjusting the output power of the driving power supply in real time and feeding back the ignition voltage and the maintaining current of the driving power supply in real time;
dissociation rate on-line real-time detection unit: the method is used for monitoring whether the concentration and the intensity generated by the plasma are stable or not on line, and calculating the gas dissociation rate of the remote plasma source in real time by combining the plasma load monitoring signal.
It should be further described that, in the specific implementation process, the online real-time detection unit of dissociation rate monitors whether the concentration and intensity generated by the plasma are stable on line, and in combination with the plasma load monitoring signal, the process of calculating the gas dissociation rate of the remote plasma source in real time specifically includes:
and a target plasma detection device is arranged at the outlet and is used for detecting the concentration and the intensity of target plasma and combining the gas flow and the pressure data of the injected cavity so as to further calculate the gas dissociation rate.
The chamber plasma load variations include gas flow and pressure injected into the chamber, and plasma outlet flow.
The bidirectional data interaction unit dynamically matches the output power of the driving power supply and the plasma load according to the recorded historical data and the current system running state, generates a power deviation adjusting signal according to the dissociation rate monitoring value, and sends the power deviation adjusting signal to the driving power supply power dynamic adjusting control unit for dynamically adjusting the output power of the driving power supply in real time.
As shown in fig. 2, a real-time control method suitable for a high dissociation rate remote plasma source, the method comprises the following steps:
leading in the initial variable, real-time running state signal and parameter of the plasma source; according to the real-time plasma load and the set dissociation rate reference value lambda ref Determining the initial output power of a driving power supply;
acquiring the dissociation rate of the gas at the time t-1 and comparing the dissociation rate with a dissociation rate reference value lambda ref Comparing in real time;
if the dissociation rate at time t-1 is not lower than lambda ref The initial output power of the driving power supply is unchanged and is constantly output; if the dissociation rate at time t-1 is lower than lambda ref The system detects the power deviation of the driving power supply and the plasma load deviation respectively to obtain deviation signals; according to the deviationThe signal is recalculated and simulated, and further the driving power supply power deviation adjusting signal is obtainedThe initial output power of the driving power supply is according to the real-time plasma load and the set dissociation rate reference value lambda ref Is determined by the historical data record of the bidirectional data interaction unit.
The system repeats the above steps according to the preset sampling interval time.
Based on the same inventive concept, the present invention also provides a computer apparatus comprising: one or more processors, and memory for storing one or more computer programs; the program includes program instructions and the processor is configured to execute the program instructions stored in the memory. The processor may be a central processing unit (CentralProcessingUnit, CPU), but may also be other general purpose processors, digital signal processors (DigitalSignalProcessor, DSP), application specific integrated circuits (ApplicationSpecificIntegrated Circuit, ASIC), field programmable gate arrays (Field-ProgrammableGateArray, FPGA) or other programmable logic devices, discrete gate or transistor logic, discrete hardware components, etc., which are the computational core and control core of a terminal for implementing one or more instructions, particularly for loading and executing one or more instructions within a computer storage medium to implement the methods described above.
It should be further noted that, based on the same inventive concept, the present invention also provides a computer storage medium having a computer program stored thereon, which when executed by a processor performs the above method. The storage media may take the form of any combination of one or more computer-readable media. The computer readable medium may be a computer readable signal medium or a computer readable storage medium. The computer readable storage medium can be, for example, but not limited to, an electronic, magnetic, optical, electrical, magnetic, infrared, or semiconductor system, apparatus, or device, or a combination of any of the foregoing. More specific examples (a non-exhaustive list) of the computer-readable storage medium would include the following: an electrical connection having one or more wires, a portable computer diskette, a hard disk, a Random Access Memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), an optical fiber, a portable compact disc read-only memory (CD-ROM), an optical storage device, a magnetic storage device, or any suitable combination of the foregoing. In the context of this document, a computer readable storage medium may be any tangible medium that can contain, or store a program for use by or in connection with an instruction execution system, apparatus, or device.
In the description of the present specification, the descriptions of the terms "one embodiment," "example," "specific example," and the like, mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present disclosure. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiments or examples. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
The foregoing has shown and described the basic principles, principal features, and advantages of the present disclosure. It will be understood by those skilled in the art that the present disclosure is not limited to the embodiments described above, which have been described in the foregoing and description merely illustrates the principles of the disclosure, and that various changes and modifications may be made therein without departing from the spirit and scope of the disclosure, which is defined in the appended claims.
Claims (10)
1. A real-time control system for a high dissociation rate remote plasma source, comprising:
remote plasma source system operation state monitoring unit: the system comprises a bidirectional data interaction unit, a remote plasma source system operation state monitoring unit and a remote plasma source system operation state monitoring unit, wherein the remote plasma source system operation state monitoring unit is used for monitoring real-time operation states and parameters of the remote plasma source complete machine system, generating a remote plasma source system operation state monitoring signal and sending the remote plasma source system operation state monitoring signal to the bidirectional data interaction unit;
plasma load monitoring and analyzing unit: the system is used for monitoring the plasma load change of the cavity in real time, generating a plasma load monitoring signal and sending the plasma load monitoring signal to the bidirectional data interaction unit;
the two-way data interaction unit: the power deviation adjusting unit is used for receiving the remote plasma source system running state monitoring signal and the plasma load monitoring signal, realizing the bidirectional data exchange between the remote plasma source running state and the real-time running state of the simulation system, generating a power deviation adjusting signal and sending the power deviation adjusting signal to the driving power supply power dynamic adjusting control unit;
the driving power supply power dynamic regulation control unit: the power deviation adjusting device is used for receiving the power deviation adjusting signal sent by the two-way data interaction unit, adjusting the output power of the driving power supply in real time and feeding back the ignition voltage and the maintaining current of the driving power supply in real time;
dissociation rate on-line real-time detection unit: the method is used for monitoring whether the concentration and the intensity generated by the plasma are stable or not on line, and calculating the gas dissociation rate of the remote plasma source in real time by combining the plasma load monitoring signal.
2. The real time control system for a high dissociation rate remote plasma source of claim 1, wherein the chamber plasma load variation includes gas flow and pressure injected into the chamber, and plasma exit flow.
3. The real-time control system for a high dissociation rate remote plasma source of claim 1, wherein the bidirectional data interaction unit dynamically matches the output power of the driving power supply with the plasma load according to the recorded historical data and the current system operation state, generates a power deviation adjustment signal according to the dissociation rate monitoring value, and sends the power deviation adjustment signal to the driving power supply power dynamic adjustment control unit for real-time dynamic adjustment of the output power of the driving power supply.
4. The real-time control system for a high dissociation rate remote plasma source of claim 1, wherein the bi-directional data exchange process is as follows:
the simulation system receives the remote plasma source system running state monitoring signal and the plasma load monitoring signal in real time, simulates the system running state in real time, and timely adjusts the output power of a driving power supply in the simulation system according to the fluctuation of the dissociation rate; after the dissociation rate is stable, further, the simulation system transmits a power deviation adjustment signal to the remote plasma source.
5. The real time control system according to claim 4, wherein said dissociation rate has a fluctuation threshold of + -0.5%.
6. The real-time control system for a high dissociation rate remote plasma source of claim 1, wherein the gas dissociation rate calculation process comprises:
and a target plasma detection device is arranged at the outlet and is used for detecting the concentration and the intensity of target plasma and combining the gas flow and the pressure data of the injected cavity so as to further calculate the gas dissociation rate.
7. A real-time control method suitable for a high dissociation rate remote plasma source, comprising the steps of:
leading in the initial variable, real-time running state signal and parameter of the plasma source; according to the real-time plasma load and the set dissociation rate reference value lambda ref Determining the initial output power of a driving power supply;
acquiring the dissociation rate of the gas at the time t-1 and comparing the dissociation rate with a dissociation rate reference value lambda ref Comparing in real time;
if the dissociation rate at time t-1 is not lower than lambda ref The initial output power of the driving power supply is unchanged and is constantly output; if the dissociation rate at time t-1 is lower than lambda ref Detecting the power deviation of the driving power supply and the plasma load deviation respectively to obtain deviation signals; re-calculating and simulating according to the deviation signal, and further obtaining a driving power supply power deviation regulating signal
Repeating the steps according to the preset sampling interval time.
8. The method of claim 7, wherein the initial output power of the driving power supply is based on a real-time plasma load and a set dissociation rate reference value λ ref Is determined by the historical data record of the bidirectional data interaction unit.
9. An apparatus, comprising:
one or more processors;
a memory for storing one or more programs;
when executed by one or more of the processors, causes the one or more processors to implement a real-time control system for a high dissociation rate remote plasma source as claimed in any one of claims 1 to 6.
10. A storage medium containing computer executable instructions which, when executed by a computer processor, are adapted to perform a real-time control system for a high dissociation rate remote plasma source as claimed in any one of claims 1 to 6.
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Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005257651A (en) * | 2004-03-15 | 2005-09-22 | Omron Corp | Plasma measuring instrument and plasma measuring method |
| KR20060093490A (en) * | 2005-02-22 | 2006-08-25 | 주성엔지니어링(주) | Plasma generation apparatus and plasma ignition method using the same |
| KR20090052819A (en) * | 2007-11-21 | 2009-05-26 | 도쿄엘렉트론가부시키가이샤 | Inductively coupled plasma processing apparatus and method |
| KR20140005083A (en) * | 2012-07-03 | 2014-01-14 | 주식회사 플라즈마트 | Plasma generation apparatus and plasma generation method |
| KR20150001250A (en) * | 2013-06-27 | 2015-01-06 | 주식회사 에스알티 | Detecting and Controll System for Remote Plasma system |
| JP2015229783A (en) * | 2014-06-04 | 2015-12-21 | 住友重機械工業株式会社 | Film deposition apparatus |
| CN114501764A (en) * | 2022-01-26 | 2022-05-13 | 江苏神州半导体科技有限公司 | Gas dissociation circuit control device and system based on multi-coil coupling |
| CN115172131A (en) * | 2022-07-14 | 2022-10-11 | 广东工业大学 | Novel high ionization rate plasma preparation cavity |
| CN115499991A (en) * | 2022-10-13 | 2022-12-20 | 北京环境特性研究所 | Measurement and calibration method and device for ionization degree of inductively coupled plasma |
| CN115665961A (en) * | 2022-09-07 | 2023-01-31 | 上海理工大学 | Multifunctional in-situ microwave plasma generating device and application thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3873943B2 (en) * | 2003-07-16 | 2007-01-31 | ソニー株式会社 | Plasma monitoring method, plasma processing method, semiconductor device manufacturing method, and plasma processing apparatus |
-
2023
- 2023-02-21 CN CN202310140863.8A patent/CN116133220B/en active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005257651A (en) * | 2004-03-15 | 2005-09-22 | Omron Corp | Plasma measuring instrument and plasma measuring method |
| KR20060093490A (en) * | 2005-02-22 | 2006-08-25 | 주성엔지니어링(주) | Plasma generation apparatus and plasma ignition method using the same |
| KR20090052819A (en) * | 2007-11-21 | 2009-05-26 | 도쿄엘렉트론가부시키가이샤 | Inductively coupled plasma processing apparatus and method |
| KR20140005083A (en) * | 2012-07-03 | 2014-01-14 | 주식회사 플라즈마트 | Plasma generation apparatus and plasma generation method |
| KR20150001250A (en) * | 2013-06-27 | 2015-01-06 | 주식회사 에스알티 | Detecting and Controll System for Remote Plasma system |
| JP2015229783A (en) * | 2014-06-04 | 2015-12-21 | 住友重機械工業株式会社 | Film deposition apparatus |
| CN114501764A (en) * | 2022-01-26 | 2022-05-13 | 江苏神州半导体科技有限公司 | Gas dissociation circuit control device and system based on multi-coil coupling |
| CN115172131A (en) * | 2022-07-14 | 2022-10-11 | 广东工业大学 | Novel high ionization rate plasma preparation cavity |
| CN115665961A (en) * | 2022-09-07 | 2023-01-31 | 上海理工大学 | Multifunctional in-situ microwave plasma generating device and application thereof |
| CN115499991A (en) * | 2022-10-13 | 2022-12-20 | 北京环境特性研究所 | Measurement and calibration method and device for ionization degree of inductively coupled plasma |
Non-Patent Citations (1)
| Title |
|---|
| 焊接电弧等离子体热学特性测量方法的研究进展;汪继宗;黄继强;黄军芬;薛龙;郭雯雯;;焊接(第10期);全文 * |
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