CN116130545A - 平面型铟镓砷线列探测器的异形保护环结构及实现方法 - Google Patents
平面型铟镓砷线列探测器的异形保护环结构及实现方法 Download PDFInfo
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Abstract
本发明公开了一种平面型铟镓砷线列探测器的异形保护环结构及实现方法。探测器的结构设计为：在线列探测器上设置一个异形保护环，保护环扩散孔为“梳形”或“弓形”，环绕在每个矩形光敏元的三个侧边，保护环P区与器件N区通过延伸电极合并引出。其实现方法是在N‑InP/I‑InGaAs/N‑InP结构外延材料上，通过光刻、刻蚀同步获得光敏元扩散孔、保护环扩散孔，同步进行P型掺杂，延伸电极覆盖保护环的P电极孔与器件N电极槽，保护环在光照下产生的光生载流子通过延伸电极导出。本发明的优点是：该结构既具备平面型探测器暗电流低、占空比高、探测率高、可靠性高等优点，又通过保护环有效抑制了由于载流子横向扩散造成的光敏元扩大、相邻光敏元之间存在串扰的问题。
Description
技术领域
本发明涉及红外光电探测器技术，具体是指一种平面型铟镓砷(InGaAs)线列探测器的异形保护环结构及实现方法，它适用于制备室温工作、高探测率、低串扰的正照射InGaAs线列探测器。
背景技术
在红外光电探测器领域，短波红外InGaAs探测器在0.9μm～1.7μm波段具有非制冷室温工作、探测率高、均匀性好等优点，有利于实现高灵敏度、小型化、低功耗、高可靠性的红外探测系统，在航天遥感、微光夜视、光谱检测等很多领域存在重要应用。
短波红外InGaAs探测器采用光伏型光敏元结构，一般为PIN结构，通常采用以下两种技术方案：(1)平面型探测器，在N-InP/I-InGaAs/N-InP结构材料上，通过对表面N型InP层进行P掺杂得到，这种方法的优点是器件的PN结埋于InP层中，这样降低了器件钝化的困难，使得器件的暗电流和噪声也相对较小。然而，由于P掺杂过程的载流子横向扩散，导致光敏元扩大，相邻光敏元之间容易产生串扰，且光敏元扩大造成光敏面定义困难。(2)台面型探测器，在原位掺杂的P-InP/I-InGaAs/N-InP结构材料上，通过刻蚀工艺将光敏元进行物理隔离，相邻光敏元之间的刻蚀隔离槽可有效抑制载流子的横向扩散，从而降低相邻光敏元之间的串扰。然而，台面型探测器因为侧面暴露，需要通过钝化工艺来降低器件暗电流，其探测率通常低于平面型探测器。
针对红外光电系统对探测器灵敏度不断提升的要求，为了获得极低暗电流和噪声，采用平面型技术方案成为InGaAs探测器的主流技术发展方向。平面型InGaAs探测器具有暗电流低、占空比高、探测率高、可靠性高等优点，且InGaAs探测器具有室温工作、无需制冷的优点。针对平面型InGaAs探测器光敏元扩大、相邻光敏元之间存在串扰的现象，必须要探索一种新结构来解决这一问题。
发明内容
本发明提出一种异形保护环结构，应用于光敏元呈“一字型”等间距排列的正照射InGaAs线列探测器，在保留平面型探测器暗电流低、占空比高、探测率高、可靠性高等优点的同时，抑制相邻光敏元之间的串扰。
本发明公开了一种平面型InGaAs线列探测器的异形保护环结构，其特征在于：每个光敏元上有一个扩散孔1，每个探测器上设置一个异形保护环，其扩散孔2为“梳形”或“弓形”，环绕在每个光敏元的三个侧边。线列两侧各设置一个N电极槽3，每个光敏元扩散孔1上设置一个P电极孔4，在异形保护环上设置一行保护环P电极孔5，与光敏元P电极孔4的位置一一对应。每个光敏元P电极孔4上引出一个P电极6，探测器的延伸电极7覆盖异形保护环的P电极孔5与器件的两个N电极槽3，将器件的异形保护环P区与探测器N区合并引出。
本发明的实现方法为：在N-InP/I-InGaAs/N-InP结构的外延材料上，通过光刻、刻蚀获得光敏元扩散孔1、保护环扩散孔2，通过扩散孔对表面N型InP帽层进行P掺杂，同步获得线列探测器的光敏元P区和保护环P区，扩散后，探测器表面沉积一层SiNx介质膜，然后分别通过光刻、刻蚀获得N电极槽3、光敏元P电极孔4、异形保护环P电极孔5，沉积金属电极，获得光敏元P电极6和延伸电极7，该延伸电极将保护环P区与器件N区导通，保护环在光照下产生的光生载流子通过N电极导出。
本发明的优点在于：
1.平面型扩散工艺将光敏元的PN结埋于InP层中，不用考虑PN结的侧面钝化问题，有效抑制器件的暗电流和噪声；
2.异形保护环和光敏元同步开孔、扩散，工艺简便；
3.异形保护环P区与器件N区直接通过延伸电极导通，保护环在光照下产生的光生载流子通过该电极导出，有效隔离相邻光敏元之间的串扰；
4.本发明的结构简单，适用于不同规模、不同光敏元尺寸的正照射线列探测器。
附图说明
图1为带异形保护环的InGaAs线列探测器的扩散孔示意图；
图中：1——光敏元扩散孔；
2——保护环扩散孔；
图2为带梳形保护环的InGaAs线列探测器的电极孔及电极示意图；
图中：3——N电极槽；
4——光敏元P电极孔；
5——保护环P电极孔；
图3为带异形保护环的InGaAs线列探测器的正面俯视图；
图中：6——光敏元P电极；
7——延伸电极。
具体实施方式
下面结合附图对本发明的具体实施方式作进一步的详细说明。
本实施例是10×1元带“梳形”保护环结构的平面型InGaAs线列探测器。
采用分子束外延(MBE)方式生长外延材料，在厚度为350μm、直径2英寸、载流子浓度3×1018cm-3的N型InP衬底上，依次生长厚度1μm的N型InP缓冲层，载流子浓度3×1018cm-3；厚度2.5μm的本征InGaAs吸收层，载流子浓度1×1016cm-3；厚度1μm的N型InP帽层，载流子浓度5×1016cm-3。
在外延材料表面采用等离子增强化学气相淀积(PECVD)生长300nm厚度的SiNx扩散掩膜层，按图1所示，通过正胶光刻、反应离子刻蚀(RIE)获得光敏元扩散孔1和梳形保护环扩散孔2，光敏元的线列规模为10×1，光敏元为长方形结构，光敏元扩散孔1为倒立的“凸形”孔，上侧大孔为84μm×100μm，下侧小孔为40μm×40μm，保护环呈“梳形”环绕在每个光敏元的三个侧边，保护环扩散孔2的梳柄部分宽度为40μm，梳齿部分宽度为4μm，梳齿与光敏元扩散孔之间非扩散区宽度6μm，相邻光敏元的中心距为100μm。
将外延材料、Zn3P2掺杂源一起密封在高真空石英管中，样品在530℃下扩散10分钟形成光敏元P区、保护环P区。在芯片表面通过PECVD沉积SiNx钝化层，厚度300nm。然后，通过正胶光刻、RIE刻蚀钝化层、ICP刻蚀N电极槽，刻蚀去除选定区域的钝化层、扩散掩膜层、帽层InP帽层、本征InGaAs吸收层，进入InP缓冲层区域，获得器件N电极槽3，深度4.3μm～4.5μm，宽度60μm。通过正胶光刻、RIE刻蚀，获得光敏元P电极孔4、保护环P电极孔5，4的尺寸为30μm×30μm，5的尺寸为20μm×20μm，见图2所示。通过正胶光刻，电子束蒸发单层Au，厚度200nm，获得光敏元P电极6、延伸电极7，见图3所示。其中，光敏元P电极6覆盖光敏元扩散区的小孔，尺寸为80μm×280μm，单侧延伸引出，便于引线键合。延伸电极7为异形结构，覆盖N电极槽3和保护环电极孔5，直接将保护环P区和器件N区导通，与保护环P电极孔5相连的梳状电极宽度为25μm，其余区域宽度为80μm以上。
采用丙酮浮胶，乙醇清洗，氮气吹干，带梳形保护环的10元平面型InGaAs线列探测器制作完毕。
Claims (2)
1.一种平面型铟镓砷线列探测器的异形保护环结构，所述的探测器为光敏元呈“一字型”等间距排列的正照射器件，其特征在于：
所述铟镓砷线列探测器上的每个光敏元上有一个扩散孔(1)，每个探测器上设置一个异形保护环，其扩散孔(2)为“梳形”或“弓形”，环绕在每个光敏元的三个侧边；两侧各设置一个N电极槽(3)，每个光敏元扩散孔(1)上设置一个P电极孔(4)，在异形保护环上设置一行保护环P电极孔(5)，与光敏元P电极孔(4)的位置一一对应；每个光敏元P电极孔(4)上引出一个P电极(6)，探测器的延伸电极(7)覆盖异形保护环的P电极孔(5)与器件的两个N电极槽(3)，将器件的异形保护环P区与探测器N区合并引出。
2.一种平面型铟镓砷线列探测器的异形保护环结构的实现方法，其特征在于实现方法如下：
在N-InP/I-InGaAs/N-InP结构的外延材料上，通过光刻、刻蚀获得光敏元扩散孔(1)、保护环扩散孔(2)，通过扩散孔对表面N型InP帽层进行P掺杂，同步获得线列探测器的光敏元P区和保护环P区，扩散后，探测器表面沉积一层SiNx介质膜，然后分别通过光刻、刻蚀获得N电极槽(3)、光敏元P电极孔(4)、异形保护环P电极孔(5)，沉积金属电极，获得光敏元P电极(6)和延伸电极(7)，该延伸电极将保护环P区与器件N区导通，保护环在光照下产生的光生载流子通过N电极导出。
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