CN116113517A - 激光加工装置、及激光加工方法 - Google Patents

激光加工装置、及激光加工方法 Download PDF

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Publication number
CN116113517A
CN116113517A CN202180060941.2A CN202180060941A CN116113517A CN 116113517 A CN116113517 A CN 116113517A CN 202180060941 A CN202180060941 A CN 202180060941A CN 116113517 A CN116113517 A CN 116113517A
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CN
China
Prior art keywords
region
light
laser
shape
processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202180060941.2A
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English (en)
Chinese (zh)
Inventor
坂本刚志
佐野育
杉浦银治
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hamamatsu Photonics KK
Original Assignee
Hamamatsu Photonics KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hamamatsu Photonics KK filed Critical Hamamatsu Photonics KK
Publication of CN116113517A publication Critical patent/CN116113517A/zh
Pending legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/067—Dividing the beam into multiple beams, e.g. multifocusing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/073—Shaping the laser spot
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Laser Beam Processing (AREA)
CN202180060941.2A 2020-07-15 2021-03-29 激光加工装置、及激光加工方法 Pending CN116113517A (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2020-121652 2020-07-15
JP2020121652 2020-07-15
JP2020217750 2020-12-25
JP2020-217750 2020-12-25
PCT/JP2021/013420 WO2022014107A1 (ja) 2020-07-15 2021-03-29 レーザ加工装置、及び、レーザ加工方法

Publications (1)

Publication Number Publication Date
CN116113517A true CN116113517A (zh) 2023-05-12

Family

ID=79554706

Family Applications (2)

Application Number Title Priority Date Filing Date
CN202180060941.2A Pending CN116113517A (zh) 2020-07-15 2021-03-29 激光加工装置、及激光加工方法
CN202180060970.9A Pending CN116075388A (zh) 2020-07-15 2021-03-29 激光加工装置、及激光加工方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN202180060970.9A Pending CN116075388A (zh) 2020-07-15 2021-03-29 激光加工装置、及激光加工方法

Country Status (5)

Country Link
JP (2) JPWO2022014107A1 (ja)
KR (2) KR20230038461A (ja)
CN (2) CN116113517A (ja)
TW (2) TW202205401A (ja)
WO (2) WO2022014107A1 (ja)

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5775265B2 (ja) * 2009-08-03 2015-09-09 浜松ホトニクス株式会社 レーザ加工方法及び半導体装置の製造方法
JP5456510B2 (ja) 2010-02-23 2014-04-02 株式会社ディスコ レーザ加工装置
JP5389264B2 (ja) * 2010-07-26 2014-01-15 浜松ホトニクス株式会社 レーザ加工方法
JP2013089714A (ja) * 2011-10-17 2013-05-13 Disco Abrasive Syst Ltd チップ形成方法
JP5995563B2 (ja) * 2012-07-11 2016-09-21 株式会社ディスコ 光デバイスの加工方法
JP7285067B2 (ja) * 2018-10-30 2023-06-01 浜松ホトニクス株式会社 レーザ加工装置及びレーザ加工方法
KR102248637B1 (ko) 2018-12-07 2021-05-06 임유택 관리기용 폭 조정장치

Also Published As

Publication number Publication date
JPWO2022014106A1 (ja) 2022-01-20
TW202205401A (zh) 2022-02-01
WO2022014107A1 (ja) 2022-01-20
WO2022014106A1 (ja) 2022-01-20
TW202205400A (zh) 2022-02-01
KR20230038462A (ko) 2023-03-20
KR20230038461A (ko) 2023-03-20
JPWO2022014107A1 (ja) 2022-01-20
CN116075388A (zh) 2023-05-05

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