CN116111453A - Semiconductor laser with switchable spectrum width and manufacturing method thereof - Google Patents

Semiconductor laser with switchable spectrum width and manufacturing method thereof Download PDF

Info

Publication number
CN116111453A
CN116111453A CN202211697397.5A CN202211697397A CN116111453A CN 116111453 A CN116111453 A CN 116111453A CN 202211697397 A CN202211697397 A CN 202211697397A CN 116111453 A CN116111453 A CN 116111453A
Authority
CN
China
Prior art keywords
layer
type
electrode
periodic
semiconductor laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202211697397.5A
Other languages
Chinese (zh)
Inventor
周寅利
宁永强
张建伟
张星
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Changchun Institute of Optics Fine Mechanics and Physics of CAS
Original Assignee
Changchun Institute of Optics Fine Mechanics and Physics of CAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Changchun Institute of Optics Fine Mechanics and Physics of CAS filed Critical Changchun Institute of Optics Fine Mechanics and Physics of CAS
Priority to CN202211697397.5A priority Critical patent/CN116111453A/en
Publication of CN116111453A publication Critical patent/CN116111453A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)

Abstract

The invention relates to the technical field of semiconductor lasers, in particular to a semiconductor laser with switchable spectral width, which comprises a table top and a ridge waveguide positioned in the middle of the table top, wherein the table top sequentially comprises an N-type electrode layer, a substrate layer, an N-type cladding layer, an N-type waveguide layer, an active layer and a P-type waveguide layer from bottom to top; the ridge waveguide is positioned at the upper end of the middle part of the P-type waveguide layer and sequentially comprises a P-type cladding layer, a P-type cover layer and a P-type electrode from bottom to top; the two sides of the ridge waveguide are insulating layers, and the insulating layers at one side of the ridge waveguide comprise periodic electrodes; when a current is applied to the periodic electrode, frequency selection can be formed by modulating the optical field distributed in the area of the periodic electrode and the laser spectrum width is narrowed; when no current is applied to the periodic electrode, the laser oscillates through the front and back facets and has broad-spectrum lasing characteristics. The scheme also provides a manufacturing method of the semiconductor laser with switchable spectrum width.

Description

Semiconductor laser with switchable spectrum width and manufacturing method thereof
Technical Field
The invention relates to the technical field of semiconductor lasers, in particular to a semiconductor laser with switchable spectrum width and a manufacturing method thereof.
Background
The semiconductor laser has the advantages of light weight, small volume, low power consumption, convenient integration, high power and high efficiency output and the like, and is widely applied to the fields of material processing, laser communication, laser pumping, laser sensing, military, medical treatment and the like.
The laser performance parameters of semiconductor lasers vary greatly according to the application scenario. Applications such as traditional laser pumping, illumination, energy transmission and the like require that a semiconductor laser has high output power, most of the used semiconductor lasers have a wide-strip (100-200 um) F-P cavity structure, and the spectrum width of the semiconductor lasers is larger (1-3 nm); while applications such as laser communication and laser sensing require lasers with narrow linewidth characteristics, most of semiconductor lasers used by the lasers are narrow stripe (< 5 um) lasers of DFB or DBR gratings, output lasers are usually single-frequency, the spectral width is generally smaller than 0.1nm, and the output power is reduced by more than 1 order of magnitude compared with wide stripe lasers. The existing semiconductor laser mainly has the following problems:
1. existing semiconductor lasers can only singly realize wide-spectrum high power or single-frequency low noise; the semiconductor laser with the aim of simultaneously having low noise and high power is mainly to increase a conical light amplifying part behind a narrow-stripe laser based on a DFB or DBR grating, the output power can be effectively improved to a certain extent, but due to the frequency selection introduced by the grating, the output power still cannot be compared with the traditional wide-stripe laser, and the flexible selection of high-power wide-spectrum and single-frequency narrow-spectrum lasers cannot be realized.
2. The current more and more emerging applications put forth various new demands on the performance parameters of the semiconductor laser, for example, in the novel wireless laser charging application, a transmitting end is integrated in an indoor ceiling lamp, laser is transmitted between the transmitting end and a plurality of receiving terminals (such as a plurality of mobile phones) at the same time and charges the terminals, and the higher the laser power is, the faster the charging efficiency is; the more novel application requirement requires information transmission in the wireless charging process, the requirement requires the laser communication application to have the characteristic of narrow linewidth, and the existing single semiconductor laser cannot flexibly switch between high-power wide spectrum and single-frequency narrow spectrum, so that the requirement of various emerging applications such as wireless laser charging in the future cannot be met.
In view of the above, how to design and manufacture a semiconductor laser with switchable spectral widths is a problem that needs to be solved.
Disclosure of Invention
The invention provides a semiconductor laser with switchable spectrum width and a manufacturing method thereof, wherein part of light is expanded outside a ridge waveguide, a periodic electrode structure is integrated in the area, and the spectrum width of the laser is switched by controlling a periodic electrode, so that flexible selection of high-power broad-spectrum and single-frequency narrow-spectrum lasers can be realized, and the performance requirements of more and more emerging applications on the semiconductor laser are met.
In order to achieve the above purpose, the present invention proposes the following technical scheme: the semiconductor laser with switchable spectrum width comprises a mesa and a ridge waveguide positioned in the middle of the mesa, wherein two sides of the ridge waveguide are insulating layers, and the insulating layers on one side of the ridge waveguide comprise periodic electrodes; the periodic electrode is formed by etching the insulating layer and depositing a patterned electrode on the laser surface; when a current is applied to the periodic electrode, periodic carrier distribution can be formed, the refractive index of the periodic electrode area is enabled to be in periodic distribution, frequency selection is formed by modulating the light field distributed in the periodic electrode area, and the laser spectrum width is enabled to be narrowed; when no current is applied to the periodic electrode, the laser oscillates through the front and back facets and has broad-spectrum lasing characteristics.
Preferably, the periodic electrode has a period of 2 micrometers to 20 micrometers; the duty cycle of the periodic electrode is 1% -80%; the area of the periodic electrode is 0.5-5 square microns.
Preferably, the mesa comprises an N-type electrode layer, a substrate layer, an N-type cladding layer, an N-type waveguide layer, an active layer and a P-type waveguide layer from bottom to top in sequence; the ridge waveguide is positioned at the upper end of the middle part of the P-type waveguide layer, and the insulating layer is positioned at the upper end of the P-type waveguide layer and at two sides of the ridge waveguide; one side of the P-type waveguide layer is etched through the insulating layer and forms a periodic electrode.
Preferably, the ridge waveguide comprises a P-type cladding layer, a P-type cover layer and a P-type electrode from bottom to top.
Preferably, the substrate layer is an N-type GaAs material; the N-type cladding is made of AlGaAs material; the N-type waveguide layer is made of AlGaAs material; the active layer is of a barrier/quantum well/barrier structure, and the active layer is made of AlGaAsP/InAlGaAs/AlGaAsP; the P-type waveguide layer is made of AlGaAs material.
Preferably, the Al component of the N-type cladding layer is 0.1-0.6, the thickness is 0.5-3 microns, the doping agent is Si, and the doping concentration is 1E18-8E18/cm < 3 >; the Al component of the N-type waveguide layer is 0.05-0.7, the thickness is 0.1-10 micrometers, the doping agent is Si, and the doping concentration is 1E16-8E18/cm < 3 >; the In component of the active layer is 0-0.5, the Al component is 0-0.5, the P component is 0-0.2, the barrier thickness is 1-200 nanometers, the quantum well thickness is 1-20 nanometers, and the light-emitting wave band is 700-1200 nanometers; the Al component in the P-type waveguide layer is 0.05-0.7, the thickness is 0.1-10 microns, the doping agent is C, and the doping concentration is 1E16-8E18/cm < 3 >.
Preferably, the P-type cladding layer is made of AlGaAs material, the Al component of the P-type cladding layer is 0.1-0.6, the thickness is 0.5-3 microns, the doping agent is C, and the doping concentration is 1E18-8E18/cm < 3 >; the P-type cover layer is made of GaAs material, the thickness is 0.1-3 microns, the doping agent is C, and the doping concentration is 1E18-1E20/cm < 3 >.
Preferably, the thickness of the periodic electrode and the P-type electrode is 200-500 nanometers, and the materials of the periodic electrode and the P-type electrode are alloy materials comprising titanium, platinum, gold, nickel and germanium.
Preferably, the material of the insulating layer is SiO2 or Si3N4, and the thickness of the insulating layer is 50-1000 nanometers.
A manufacturing method of a semiconductor laser with switchable spectrum width is used for manufacturing the semiconductor laser, and comprises the following steps:
s1: taking a GaAs wafer, and sequentially preparing an N-type cladding layer, an N-type waveguide layer, an active layer, a P-type waveguide layer, a P-type cladding layer and a P-type cover layer through epitaxial growth to obtain a wafer containing an epitaxial structure;
s2: preparing a ridge waveguide on the surface of the grown wafer through a photoetching process and a dry etching process, and performing a mask layer removing process and a cleaning process to obtain the wafer containing the ridge waveguide;
s3: depositing an insulating layer material on the surface of a wafer containing a ridge waveguide, and preparing a patterned electrode injection window and a periodic electrode window on the surface of the insulating layer by adopting a photoetching process and a dry etching process;
s4: performing a third photoetching process on the surface of the wafer and preparing a lift-off mask pattern;
s5: growing a P-type electrode in metal film evaporation equipment, and performing a lift-off process to prepare the P-type electrode and a periodic electrode;
s6: thinning, polishing and cleaning the N-type substrate, sputtering an N-type electrode layer on the N-type substrate, and performing an annealing process on the wafer to form European contact;
s7: cleaving the wafer into bars, and cleaving the bars into chips.
The invention has the beneficial effects that:
1. on the basis of a traditional wide-strip F-P cavity semiconductor laser, part of light is expanded outside a ridge waveguide by changing the transverse distribution of a light field, a periodic electrode structure is integrated in the area, when current is applied to an electrode, periodic carrier distribution is formed, the refractive index of the area is periodically distributed due to the fact that the refractive index of a semiconductor material is related to the carrier distribution, the light field distributed in the area is modulated, frequency selection is formed, and the laser spectrum width is narrowed; when no current is applied to the periodic electrode, the area has no periodic carrier and refractive index distribution, no frequency selective effect, and the laser oscillates by virtue of front and back cavity surfaces and has wide-spectrum lasing characteristics. The spectral width of the semiconductor laser can be made switchable by controlling the periodic electrode.
2. The invention can control the spectrum width of a single laser chip through the electrode switch, and has the function of freely switching the spectrum width in a single device. Compared with the prior art, if the switching of the spectrum width of the laser needs at least two lasers with different structures, and the systems such as the optical paths and the beam shaping of the two lasers are completely independent, the laser in the scheme can realize the free switching of the spectrum width by only one chip, and the optical paths and the beam shaping system also need only one set, so that the system is simplified, and the cost is reduced.
Drawings
Fig. 1 is a schematic perspective view of a semiconductor laser according to an embodiment of the present invention.
Fig. 2 is a schematic top view of a semiconductor laser according to an embodiment of the present invention.
Fig. 3 is a cross-sectional view of a semiconductor laser according to an embodiment of the present invention along a periodic electrode distribution direction.
Fig. 4 is a schematic diagram of carrier distribution in a device caused by a periodic electrode according to an embodiment of the present invention.
FIG. 5 is a schematic diagram of the distribution of the light field inside the device caused by the periodic electrode according to the embodiment of the present invention.
Fig. 6 is a schematic diagram of optical loss spectrum caused by the periodic electrode according to the embodiment of the present invention.
Reference numerals: an N-type electrode layer 1, a substrate layer 2, an N-type cladding layer 3, an N-type waveguide layer 4, an active layer 5, a P-type waveguide layer 6, a P-type cladding layer 7, a P-type cover layer 8, a P-type electrode 9, a periodic electrode 10, an insulating layer 11, a ridge waveguide 12 and a mesa 13.
Detailed Description
The present invention will be further described in detail with reference to fig. 1 to 6 and the specific embodiments thereof in order to make the objects, technical solutions and advantages of the present invention more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not to be construed as limiting the invention.
As shown in fig. 1, the semiconductor laser with switchable spectral width comprises a mesa 13 and a ridge waveguide 12 positioned in the middle of the mesa 13, wherein the two sides of the ridge waveguide 12 are provided with insulating layers 11, and the insulating layers 11 at one side of the ridge waveguide 12 comprise periodic electrodes 10; the periodic electrode 10 is formed by etching the insulating layer 11 and depositing a patterned electrode on the laser surface; the periodic electrode 10 has a period of 2 micrometers to 20 micrometers; the duty cycle of the periodic electrode 10 is 1% -80%; the area of the periodic electrode 10 is 0.5-5 square microns; the shape of the periodic electrode 10 is preferably square, rectangular, circular, elliptical or diamond, and those skilled in the art can set the periodic electrode 10 to other shapes according to actual needs; the periodic electrode 10 is prepared by photolithographic techniques.
The direction indicated by the arrow at M in fig. 1 is the light-emitting direction of the laser, and the transverse direction of the laser is the direction perpendicular to the light-emitting direction; by changing the transverse distribution of the optical field, part of light is expanded outside the ridge waveguide, and a periodic electrode structure is integrated in the area to realize the switchable spectrum width; when a current is applied to the periodic electrode 10, a periodic carrier distribution can be formed and the refractive index of the area of the periodic electrode 10 is caused to present a periodic distribution, and frequency selection is formed and the laser spectrum width is narrowed by modulating the optical field distributed in the area of the periodic electrode 10; the periodic current distribution is shown by the S-line in fig. 3; when no current is applied to the periodic electrode 10, the laser oscillates through the front and back facets and has broad-spectrum lasing characteristics.
Wherein, the characteristic of periodic distribution of the electrode can be seen according to the carrier distribution condition in the device through FIG. 4; the modulation effect of the periodic refractive index on the light field can be seen by simulating the periodic refractive index introduced by the periodic electrode 10 to calculate the light field distribution in the device shown in fig. 5; the result of the loss modulation on the optical field by the periodic refractive index structure calculated by the result in fig. 5 is shown in fig. 6, taking 885nm wavelength as a special example in the calculation process, and for other wavelengths, the periodic electrode 10 can be realized only by the design of the periodic parameters of the periodic electrode 10, so that the periodic electrode 10 introduces a loss spectrum at 885nm, and the half-width of the spectrum is only 0.6nm, which indicates that the periodic electrode 10 has a selective characteristic on a specific frequency of the spectrum, and further narrows the spectrum width.
As shown in fig. 2, the mesa 13 comprises an N-type electrode layer 1, a substrate layer 2, an N-type cladding layer 3, an N-type waveguide layer 4, an active layer 5 and a P-type waveguide layer 6 from bottom to top in sequence; the ridge waveguide 12 is positioned at the upper end of the middle part of the P-type waveguide layer 6, and the insulating layer 11 is positioned at the upper end of the P-type waveguide layer 6 and positioned at two sides of the ridge waveguide 12; one side of the P-type waveguide layer 6 is etched by the insulating layer 11 and a periodic electrode 10 is formed; the ridge waveguide 12 includes, in order from bottom to top, a P-type cladding layer 7, a P-type cap layer 8, and a P-type electrode 9.
The substrate layer 2 is made of N-type GaAs material; the N-type cladding layer 3 is made of AlGaAs material, the Al component of the N-type cladding layer 3 is 0.1-0.6, the thickness is 0.5-3 microns, the doping agent is Si, and the doping concentration is 1E18-8E18/cm < 3 >; the N-type waveguide layer 4 is made of AlGaAs material, the Al component of the N-type waveguide layer 4 is 0.05-0.7, the thickness is 0.1-10 microns, the doping agent is Si, and the doping concentration is 1E16-8E18/cm < 3 >; the active layer 5 is of a barrier/quantum well/barrier structure, the active layer 5 is made of AlGaAsP/InAlGaAs/AlGaAsP, the In component of the active layer 5 is 0-0.5, the Al component is 0-0.5, the P component is 0-0.2, the barrier thickness is 1-200 nanometers, the quantum well thickness is 1-20 nanometers, and the light-emitting wave band is 700-1200 nanometers; the P-type waveguide layer 6 is made of AlGaAs material, the Al component in the P-type waveguide layer 6 is 0.05-0.7, the thickness is 0.1-10 microns, the doping agent is C, and the doping concentration is 1E16-8E18/cm < 3 >; the P-type cladding 7 is made of AlGaAs material, the Al component of the P-type cladding 7 is 0.1-0.6, the thickness is 0.5-3 microns, the doping agent is C, and the doping concentration is 1E18-8E18/cm < 3 >; the P-type cover layer 8 is made of GaAs material, the thickness is 0.1-3 microns, the doping agent is C, and the doping concentration is 1E18-1E20/cm < 3 >.
The thickness of the periodic electrode 10 and the P-type electrode 9 is 200-500 nanometers, and the materials of the periodic electrode 10 and the P-type electrode 9 are alloy materials comprising titanium, platinum, gold, nickel and germanium; the material of the insulating layer 11 is SiO2 or Si3N4, and the thickness of the insulating layer 11 is 50-1000 nanometers.
It is worth noting that the material system of the laser material and structure in the 700-1200nm waveguide range in the scheme is GaAs system, if the material system is changed into InP system, the laser in the 1200-1600nm wave band range can be realized, the adopted epitaxial structure is a mature InP-based semiconductor laser structure, and the device structure and design method are the same.
A manufacturing method of a semiconductor laser with switchable spectrum width is used for manufacturing the semiconductor laser, and comprises the following steps:
s1: taking a GaAs wafer, and sequentially preparing an N-type cladding layer 3, an N-type waveguide layer 4, an active layer 5, a P-type waveguide layer 6, a P-type cladding layer 7 and a P-type cover layer 8 through epitaxial growth to obtain a wafer containing an epitaxial structure;
s2: preparing a ridge waveguide on the surface of the grown wafer through a photoetching process and a dry etching process, and performing a mask layer removing process and a cleaning process to obtain the wafer containing the ridge waveguide;
s3: depositing an insulating layer 11 material on the surface of a wafer containing a ridge waveguide, and preparing a patterned electrode injection window and a periodic electrode 10 window on the surface of the insulating layer 11 by adopting a photoetching process and a dry etching process;
s4: performing a third photoetching process on the surface of the wafer and preparing a lift-off mask pattern;
s5: growing a P-type electrode 9 in metal film evaporation equipment, and performing a lift-off process to prepare the P-type electrode 9 and a periodic electrode 10;
s6: thinning, polishing and cleaning the N-type substrate, sputtering an N-type electrode layer 1 on the N-type substrate, and performing an annealing process on the wafer to form European contact;
s7: cleaving the wafer into bars, and cleaving the bars into chips.
While embodiments of the present invention have been illustrated and described above, it will be appreciated that the above described embodiments are illustrative and should not be construed as limiting the invention. Variations, modifications, alternatives and variations of the above-described embodiments may be made by those of ordinary skill in the art within the scope of the present invention.
The above embodiments of the present invention do not limit the scope of the present invention. Any other corresponding changes and modifications made in accordance with the technical idea of the present invention shall be included in the scope of the claims of the present invention.

Claims (10)

1. The semiconductor laser with the switchable spectrum width is characterized by comprising a table top (13) and a ridge waveguide (12) positioned in the middle of the table top (13), wherein insulating layers (11) are arranged on two sides of the ridge waveguide (12), and a periodic electrode (10) is arranged on the insulating layer (11) on one side of the ridge waveguide (12); the periodic electrode (10) is formed by etching the insulating layer (11) and depositing a patterned electrode on the laser surface; when a current is applied to the periodic electrode (10), a periodic carrier distribution can be formed and the refractive index of the area of the periodic electrode (10) is enabled to be in a periodic distribution, and frequency selection is formed and the laser spectrum width is narrowed by modulating an optical field distributed in the area of the periodic electrode (10); when no current is applied to the periodic electrode (10), the laser oscillates through the front and back facets and has broad spectrum lasing characteristics.
2. The spectrally width-switchable semiconductor laser according to claim 1, characterized in that the periodic electrode (10) has a period of 2-20 micrometers; the duty cycle of the periodic electrode (10) is 1% -80%; the area of the periodic electrode (10) is 0.5-5 square microns.
3. The semiconductor laser with switchable spectral width according to any of claims 1-2, characterized in that the mesa (13) comprises an N-type electrode layer (1), a substrate layer (2), an N-type cladding layer (3), an N-type waveguide layer (4), an active layer (5) and a P-type waveguide layer (6) in order from bottom to top; the ridge waveguide (12) is positioned at the upper end of the middle part of the P-type waveguide layer (6), and the insulating layer (11) is positioned at the upper end of the P-type waveguide layer (6) and at two sides of the ridge waveguide (12); one side of the P-type waveguide layer (6) is etched by the insulating layer (11) and a periodic electrode (10) is formed.
4. A semiconductor laser as claimed in claim 3, characterized in that the ridge waveguide (12) comprises, in order from bottom to top, a P-type cladding layer (7), a P-type cap layer (8) and a P-type electrode (9).
5. The spectrally switchable semiconductor laser according to claim 4, characterized in that the substrate layer (2) is an N-type GaAs material; the N-type cladding layer (3) is made of AlGaAs material; the N-type waveguide layer (4) is made of AlGaAs material; the active layer (5) is of a barrier/quantum well/barrier structure, and the material of the active layer (5) is AlGaAsP/InAlGaAs/AlGaAsP; the P-type waveguide layer (6) is made of AlGaAs material.
6. The semiconductor laser with switchable spectral width according to claim 5, characterized in that the Al composition of the N-type cladding layer (3) is 0.1-0.6, the thickness is 0.5-3 microns, the dopant is Si, the doping concentration is 1E18-8E18/cm3; the Al component of the N-type waveguide layer (4) is 0.05-0.7, the thickness is 0.1-10 micrometers, the doping agent is Si, and the doping concentration is 1E16-8E18/cm < 3 >; the In component of the active layer (5) is 0-0.5, the Al component is 0-0.5, the P component is 0-0.2, the barrier thickness is 1-200 nanometers, the quantum well thickness is 1-20 nanometers, and the light-emitting wave band is 700-1200 nanometers; the Al component in the P-type waveguide layer (6) is 0.05-0.7, the thickness is 0.1-10 microns, the doping agent is C, and the doping concentration is 1E16-8E18/cm < 3 >.
7. The semiconductor laser with switchable spectral width according to claim 6, characterized in that the P-type cladding layer (7) is AlGaAs material, the Al composition of the P-type cladding layer (7) is 0.1-0.6, the thickness is 0.5-3 microns, the dopant is C, the doping concentration is 1E18-8E18/cm3; the P-type cover layer (8) is made of GaAs material, the thickness is 0.1-3 microns, the doping agent is C, and the doping concentration is 1E18-1E20/cm < 3 >.
8. The semiconductor laser according to claim 7, wherein the thickness of the periodic electrode (10) and the P-type electrode (9) is 200 nm-500 nm, and the material of the periodic electrode (10) and the P-type electrode (9) is an alloy material including titanium, platinum, gold, nickel, germanium.
9. The semiconductor laser with switchable spectral width according to claim 8, characterized in that the material of the insulating layer (11) is SiO2 or Si3N4, and the thickness of the insulating layer (11) is 50-1000 nm.
10. A method of fabricating a semiconductor laser having a switchable spectral width, for fabricating the semiconductor laser of claims 1-9, comprising the steps of:
s1: taking a GaAs wafer, and sequentially preparing an N-type cladding layer (3), an N-type waveguide layer (4), an active layer (5), a P-type waveguide layer (6), a P-type cladding layer (7) and a P-type cover layer (8) through epitaxial growth to obtain a wafer containing an epitaxial structure;
s2: preparing a ridge waveguide on the surface of the grown wafer through a photoetching process and a dry etching process, and performing a mask layer removing process and a cleaning process to obtain the wafer containing the ridge waveguide;
s3: depositing an insulating layer (11) material on the surface of a wafer containing a ridge waveguide, and preparing a patterned electrode injection window and a periodic electrode (10) window on the surface of the insulating layer (11) by adopting a photoetching process and a dry etching process;
s4: performing a third photoetching process on the surface of the wafer and preparing a lift-off mask pattern;
s5: growing a P-type electrode (9) in metal film evaporation equipment, and performing a lift-off process to prepare the P-type electrode (9) and a periodic electrode (10);
s6: thinning, polishing and cleaning the N-type substrate, sputtering an N-type electrode layer (1) on the N-type substrate, and performing an annealing process on the wafer to form European contact;
s7: cleaving the wafer into bars, and cleaving the bars into chips.
CN202211697397.5A 2022-12-28 2022-12-28 Semiconductor laser with switchable spectrum width and manufacturing method thereof Pending CN116111453A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202211697397.5A CN116111453A (en) 2022-12-28 2022-12-28 Semiconductor laser with switchable spectrum width and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202211697397.5A CN116111453A (en) 2022-12-28 2022-12-28 Semiconductor laser with switchable spectrum width and manufacturing method thereof

Publications (1)

Publication Number Publication Date
CN116111453A true CN116111453A (en) 2023-05-12

Family

ID=86263110

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202211697397.5A Pending CN116111453A (en) 2022-12-28 2022-12-28 Semiconductor laser with switchable spectrum width and manufacturing method thereof

Country Status (1)

Country Link
CN (1) CN116111453A (en)

Similar Documents

Publication Publication Date Title
JP2959902B2 (en) Semiconductor laser, device having the same, and method of manufacturing the same
CN107230931B (en) Distributed feedback semiconductor laser chip, preparation method thereof and optical module
US20110206080A1 (en) Laser diode and method of manufacturing the same
CN112290382B (en) Semiconductor laser and manufacturing method thereof
KR100345452B1 (en) Long-wavelength vertical-cavity surface-emitting laser device having diffusion area in edge of upper mirror and method for forming the same
CN104917052A (en) Variable-period tilted grating laser and preparation method thereof
WO2020151290A1 (en) On-chip integrated semiconductor laser structure and manufacturing method thereof
JPS5940592A (en) Semiconductor laser element
CN111969415B (en) Wide-spectrum multi-wavelength Fabry-Perot laser
KR20030062073A (en) Method for fabricating long wavelength vertical-cavity surface emitting lasers
CN116111453A (en) Semiconductor laser with switchable spectrum width and manufacturing method thereof
US6552358B2 (en) High power single mode laser and method of fabrication
CN114188819B (en) 1342 nanometer wavelength high-power microstructure DFB laser
JP3726240B2 (en) Semiconductor optical waveguide
CN111916999B (en) Distributed feedback laser with groove structure and preparation method
WO2008114896A1 (en) High power single mode optical devices with s-bending ridge waveguide and fabrication method thereof
US4821278A (en) Inverted channel substrate planar semiconductor laser
KR100484490B1 (en) Long-wavelength vertical cavity surface emitting laser and fabricating method the same
JPH11163456A (en) Semiconductor laser
CN112636166B (en) Tunable single longitudinal mode laser and preparation method thereof
JP2630035B2 (en) Tunable semiconductor laser
JPH07221387A (en) Waveguide type optical element
CN114400501B (en) Monolithic integrated chaotic semiconductor laser based on distributed Bragg reflection grating
JPH0478036B2 (en)
CN108493763B (en) Semiconductor laser device and manufacturing method

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination