CN108493763B - Semiconductor laser device and manufacturing method - Google Patents
Semiconductor laser device and manufacturing method Download PDFInfo
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- CN108493763B CN108493763B CN201810148414.7A CN201810148414A CN108493763B CN 108493763 B CN108493763 B CN 108493763B CN 201810148414 A CN201810148414 A CN 201810148414A CN 108493763 B CN108493763 B CN 108493763B
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
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- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
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Abstract
The invention discloses a semiconductor laser device and a manufacturing method thereof, which solve the problems of slow wavelength switching time, large power loss, large structure size and high manufacturing cost of the conventional device and method. The device comprises an active layer and a buffer layer, and further comprises: p electrode, electric isolation, large chirp grating, N electrode; the electric isolation is positioned between the adjacent P electrodes; the large chirped grating is a linear chirped grating and is positioned below the P electrodes, phase shifts are uniformly inserted into the large chirped grating, the number of the phase shifts is the same as that of the P electrodes, each phase shift corresponds to 1P electrode, the large chirped grating is used for forming a multi-longitudinal-mode resonant cavity, and the minimum value and the maximum value of the longitudinal-mode lasing working wavelength corresponding to the multi-longitudinal-mode resonant cavity correspond to the minimum period and the maximum period of the large chirped grating; the active layer is positioned below the large chirp grating; the buffer layer is positioned below the active layer; the N electrode is positioned below the buffer layer. The method is used for manufacturing the device. The invention realizes the problem of fast switching of laser wavelength.
Description
Technical Field
The invention relates to the technical field of photoelectrons, in particular to a semiconductor laser device and a manufacturing method thereof.
Background
In the field of optoelectronic technology, different wavelengths are simultaneously used as carriers for information transmission, which can further improve the access bandwidth and flexibility, and the wavelength-switchable laser can be equivalently realized by a continuously tunable laser, i.e., a series of wavelength grid points are selected as references in the tuning range of the continuously tunable laser, so that the continuously tunable laser can realize the function of the wavelength-switchable laser. Current continuously tunable lasers based on mechanical and thermal tuning are limited by mechanical motion and thermal settling time and thus cannot achieve fast wavelength switching. The existing laser based on the current tuning principle comprises an adjustable distributed amplification distributed feedback laser light source, and the cost is too high, so that the laser is not beneficial to a large number of network applications; the wavelength switchable laser based on the multi-wavelength array has large power loss.
Disclosure of Invention
The invention provides a semiconductor laser device and a manufacturing method thereof, and solves the problems of slow wavelength switching time, large power loss, large structure size and high manufacturing cost of the conventional device and method.
A semiconductor laser device includes an active layer, a buffer layer, and further includes: p electrode, electric isolation, large chirp grating, N electrode; the number of the P electrodes is more than 2; the electrical isolation is located between adjacent P electrodes; the large chirped grating is a linear chirped grating and is positioned below the P electrodes, phase shifts are uniformly inserted into the large chirped grating, the number of the phase shifts is the same as that of the P electrodes, each phase shift corresponds to 1P electrode, the difference between the horizontal position of the center of the corresponding P electrode and the horizontal position of the center of the corresponding P electrode is greater than or equal to 0 and less than or equal to L/2n, wherein L is the cavity length of the device, n is the number of the P electrodes, the large chirped grating is used for forming a multi-longitudinal-mode resonant cavity, and the minimum value and the maximum value of the longitudinal-mode lasing working wavelength corresponding to the multi-longitudinal-mode resonant cavity correspond to the minimum period and the maximum period of the large; the active layer is positioned below the large-chirp grating; the buffer layer is positioned below the active layer; the number of the N electrodes is 1, and the N electrodes are located below the buffer layer.
Preferably, the phase shift is greater than or equal to 0 and less than or equal to 2 pi.
Preferably, the length of the P electrodes is less than L/n, where L is the cavity length of the device and n is the number of the P electrodes.
Further, when the difference between the phase shift and the corresponding horizontal coordinate relative position of the center of the P electrode is 0, the device realizes n-2 uniform interval lasing working wavelength switching, and the switching interval is (lambda 2-lambda 1)/n; when the current above the threshold value is applied to the ith P electrode and the transparent current is applied to the rest P electrodes, the device emits the ith-1 wavelength with the wavelength value of lambda 1+ i (lambda 2-lambda 1)/n; wherein n is the number of the P electrodes, i is the serial number of the P electrodes, 1< i < n-1, and λ 1 and λ 2 are the minimum and maximum values of the working wavelength of the large chirp grating.
Further, when the relative position of the phase shift and the corresponding P electrode center is L/2n, the device realizes n-1 uniform interval lasing working wavelength switching, and the switching interval is (lambda 2-lambda 1)/n; when current above a threshold value is applied to the ith and i + 1P electrodes at the same time, and transparent current is applied to the rest P electrodes, the device emits the ith wavelength with the wavelength value of lambda 1+ i (lambda 2-lambda 1)/n; wherein n is the number of the P electrodes, i is the serial number of the P electrodes, 1< i < n-1, and λ 1 and λ 2 are the minimum and maximum values of the working wavelength of the large chirp grating.
Preferably, the large chirped grating and the intermediate insertion phase shift of the large chirped grating are manufactured by an electron beam exposure method.
Preferably, the large chirped grating and the intermediate insertion phase shift of the large chirped grating are manufactured by a step-by-step lithography technology.
Preferably, the large chirped grating and the intermediate insertion phase shift of the large chirped grating are manufactured by a reconstruction-equivalent chirp technology.
A method of fabricating a semiconductor laser device, for fabricating said device, comprising the steps of: determining and optimizing a primary epitaxial wafer by adopting a primary epitaxial growth technology, wherein the primary epitaxial wafer comprises the active layer and the large-chirp grating; manufacturing the large-chirp grating by adopting a reconstruction-equivalent chirp technology; carrying out epitaxial growth on the large-chirp grating by adopting a secondary epitaxial growth technology; and etching the ridge waveguide, manufacturing an electrode and carrying out electric isolation treatment on the grating structure after the secondary epitaxial growth.
Preferably, the step of manufacturing the large-chirp grating by using the reconstruction-equivalent chirp technique further includes: spin-coating photoresist on the large chirped grating, and making a uniform seed grating pattern by a holographic exposure method; making a pattern of the seed grating by ultraviolet lithography; and manufacturing a grating structure with an undulating surface on the large-chirp grating by developing and etching methods.
The beneficial effects of the invention include: the semiconductor laser device has a multi-wavelength switching function, can realize very high switching speed, theoretically has the wavelength switching speed only depending on the switching speed of the laser, namely the switching speed is in the order of several nanoseconds, and has the advantage of high switching speed compared with the conventional laser for switching the wavelength by temperature tuning; meanwhile, the laser only has one waveguide, so that a wave combination structure is not needed, and therefore, compared with a conventional multi-wavelength array wave combination structure, the laser has larger output power and can save the size of a chip.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the invention and not to limit the invention. In the drawings:
FIG. 1 is an embodiment of a semiconductor laser device;
FIG. 2(a) is an embodiment of a large chirped grating transmission characteristic with phase shift locations coincident with the edges of the P-electrode;
FIG. 2(b) shows an embodiment of the transmission characteristic of a highly chirped grating with a phase shift position coinciding with the center of the P electrode;
FIG. 3 is a flow chart of an embodiment of a method of fabricating a semiconductor laser device;
fig. 4 is a flowchart embodiment of a method for fabricating a semiconductor laser device including fabrication of a reconstruction-equivalent chirped grating.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the technical solutions of the present invention will be clearly and completely described below with reference to the specific embodiments of the present invention and the accompanying drawings. It is to be understood that the described embodiments are merely exemplary of the invention, and not restrictive of the full scope of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In an optical access network, a wavelength division multiplexing passive optical network (WDM-PON) can achieve further improvement of access bandwidth and flexibility by using different wavelengths as carriers for information transmission simultaneously by combining advantages of a wavelength division multiplexing technology, and thus in a backhaul network of the WDM-PON, a large number of lasers with various wavelengths are required to emit signal light sources with different wavelengths. In WDM systems, a variety of single lasers of different lasing wavelengths have been used to meet the system requirements for multiple wavelength light sources, but this approach tends to result in greater power consumption, complex configuration and management costs, and less flexibility. Especially for the coming 5G era and the next-generation passive optical network (NGPON2) in use, WDM technology is widely adopted, and at the same time, high demands are made on the flexibility of the network. Therefore, it is desirable for the network application to be able to use a large number of lower cost wavelength switchable lasers to replace a wide variety of different wavelength lasers, i.e. one laser can play the role of multiple lasers, thereby greatly increasing the management cost and network flexibility. In addition, in the optical switching network, in order to meet the future requirements of higher speed and more flexibility, the switching principle is shifting from electrical switching to wavelength switching, and in the wavelength switching system, a laser with a fast wavelength switching capability is an essential device.
A sampled grating distributed feedback mirror (SGDBR) Laser source was developed in l.a. colliden, "monolithic tunable Laser with sampled gratings," IEEE j.quantum electron.29, pp.1824-1834(1993), at santa basba division, california university, and contains two front and back reflective sampled gratings, a phase modulation region and an active gain region. The reflection spectrum of the sampling grating is comb-shaped, the free paths of the frequency spectrums of the front grating and the rear grating are slightly different, and the mode selection can be realized by utilizing the vernier effect of the front grating and the rear grating; by adjusting the current of the sampling grating area, the laser light source can obtain a tuning range of more than 40 nm. Professor k.tsuzuki Of NTT laboratories In japan filed [ k.tsuzuki, "Full C-Band Tunable DFB Laser Array coding With InP Mach-zehnder modulator for DWDM Optical Communication System", IEEE Journal Of selective tuning In Quantum electronics.15, pp.521-527(2009) ] developed Tunable distributed amplification distributed feedback (TDA-DFB) Laser sources that alternate active gain regions With passive tuning regions, and after asymmetric TDA-DFB was used, the single-electrode continuous tuning range reached 8nm, and the total tuning range exceeded 45nm, but the cost Of the continuously Tunable Laser was too high to be beneficial for mass network applications. The wavelength switchable laser based on the multi-wavelength array is developed by NTT company of Japan in the document [ Ishii. "Spectral line width reduction in width and wavelength tunable DFB laser array." IEEE Journal of Selected calibration in Quantum Electronics 15, No.3(2009):514 and 520 ], but the wave combining structure based on the multi-wavelength array brings larger power loss, and theoretically, the loss is larger when the number of wavelengths is larger.
The technical solutions provided by the embodiments of the present invention are described in detail below with reference to the accompanying drawings.
Fig. 1 is a schematic diagram of a semiconductor laser device, and an embodiment of the present invention provides a wavelength switchable semiconductor laser device based on a large chirp grating, including an active layer 4 and a buffer layer 5, and further including: p electrode 1, electric isolation 2, large chirp grating 3, N electrode 6.
The number of the P electrodes is more than 2; the electrical isolation is located between adjacent P electrodes; the large chirped grating is a linear chirped grating and is positioned below the P electrodes, phase shifts are uniformly inserted into the large chirped grating, the number of the phase shifts is the same as that of the P electrodes, each phase shift corresponds to 1P electrode, the difference between the horizontal position of the center of the corresponding P electrode and the horizontal position of the center of the corresponding P electrode is greater than or equal to 0 and less than or equal to L/2n, wherein L is the cavity length of the device, n is the number of the P electrodes, the large chirped grating is used for forming a multi-longitudinal-mode resonant cavity, and the minimum value and the maximum value of the longitudinal-mode lasing working wavelength corresponding to the multi-longitudinal-mode resonant cavity correspond to the minimum period and the maximum period of the large; the active layer is positioned below the large-chirp grating; the buffer layer is positioned below the active layer; the number of the N electrodes is 1, and the N electrodes are located below the buffer layer.
Preferably, the phase shift is greater than or equal to 0 and less than or equal to 2 pi.
Preferably, the length of the P electrodes is less than L/n, where L is the cavity length of the device and n is the number of the P electrodes.
Preferably, the large chirped grating and the intermediate insertion phase shift of the large chirped grating are manufactured by adopting an electron beam exposure method, namely, an electron beam firstly passes through a scattering mask plate, then is subjected to direction control by a deflection focusing electromagnetic lens, and then forms a desired pattern on an electron beam glue on a substrate.
Preferably, the large chirped grating and the intermediate insertion phase shift of the large chirped grating are manufactured by a step-by-step lithography technology.
Preferably, the large chirped grating and the intermediate insertion phase shift of the large chirped grating are manufactured by a reconstruction-equivalent chirp technology.
In the active layer, an upper confinement layer, a lower confinement layer, and a quantum well layer are included.
It should be noted that the large-chirp grating forms a multi-longitudinal-mode resonant cavity in the laser, and the designated longitudinal-mode lasing, i.e., the designated wavelength lasing, can be realized by changing the gain distribution in the laser cavity, and is particularly suitable for use when the interval between the wavelengths to be switched is small, for example, the typical value of the wavelength grid interval of C-band dense wavelength division multiplexing is 0.8 nm.
It should be further noted that the period variation of the large chirped grating needs to be precisely controlled, so as to implement a stable multi-longitudinal-mode resonant cavity with precise wavelength interval, and therefore, the large chirped grating manufactured by using the reconstruction-equivalent chirping technology has a better effect.
It should be further understood that the number of the P electrodes in the embodiment of the present invention is 6, and other numbers may also be used, which are not particularly limited herein.
The semiconductor laser device provided by the embodiment of the invention has a multi-wavelength switching function, can realize very high switching speed by changing the current injected into different electrodes, theoretically depends only on the switching speed of the laser, namely in the order of several nanoseconds, and has the advantage of high switching speed compared with the conventional laser for switching the wavelength by temperature tuning; since the laser has only one waveguide, a wave combination structure is not needed, so that the laser has larger output power compared with a conventional multi-wavelength array wave combination structure, and the chip size can be saved.
Fig. 2(a) shows an embodiment of a transmission characteristic of a large-chirp grating with a phase shift position coinciding with the edge of a P-electrode, and (b) shows an embodiment of a transmission characteristic of a large-chirp grating with a phase shift position coinciding with the center of a P-electrode.
The difference between the phase shift and the corresponding horizontal coordinate relative position of the center of the P electrode in FIG. 2(a) is 0, and the device realizes n-2 uniformly-spaced lasing working wavelength switches with the switching interval of (lambda 2-lambda 1)/n; when the current above the threshold value is applied to the ith P electrode and the transparent current is applied to the rest P electrodes, the device emits the ith-1 wavelength with the wavelength value of lambda 1+ i (lambda 2-lambda 1)/n; wherein n is the number of the P electrodes, i is the serial number of the P electrodes, 1< i < n-1, and λ 1 and λ 2 are the minimum and maximum values of the working wavelength of the large chirp grating.
When a current injection scheme is changed, the lasing current of the ith P electrode is switched into a transparent current, and the transparent current of the jth (j ≠ i) P electrode is switched into a lasing current, so that the switching from the ith-1 wavelength to the jth-1 wavelength can be realized, the transparent current is slightly smaller than the threshold current, and the lasing current is larger than the threshold current.
When the relative position of the phase shift and the corresponding P electrode center in FIG. 2(b) is L/2n, the device realizes n-1 uniformly-spaced lasing operating wavelength switches with a switching interval of (λ 2- λ 1)/n; when current above a threshold value is applied to the ith and i + 1P electrodes at the same time, and transparent current is applied to the rest P electrodes, the device emits the ith wavelength with the wavelength value of lambda 1+ i (lambda 2-lambda 1)/n; wherein n is the number of the P electrodes, i is the serial number of the P electrodes, 1< i < n-1, and λ 1 and λ 2 are the minimum and maximum values of the working wavelength of the large chirp grating.
When changing the current injection scheme, for example, switching the lasing current of the i-th and i + 1-th electrodes to a transparent current, and switching the transparent current of the j (j ≠ i) and j + 1-th electrodes to a lasing current, the lasing current being larger than the threshold current, can be achieved from the i-th wavelength to the j-th wavelength.
In the embodiment of the present invention, the number of the P electrodes is 6, and may be other numbers, which is not particularly limited herein.
Fig. 3 is a flowchart embodiment of a method for manufacturing a semiconductor laser device, and an embodiment of the present invention provides a method for manufacturing a semiconductor laser device, which is used for manufacturing the semiconductor laser device and includes the following steps:
and 101, determining and optimizing a primary epitaxial wafer by adopting a primary epitaxial growth technology, wherein the primary epitaxial wafer comprises the active layer and the large-chirp grating.
In step 101, the primary epitaxial growth is to use an epitaxial growth apparatus such as MOCVD or MBE to sequentially grow and prepare the required materials of each layer on the substrate, that is, to sequentially grow P-type and N-type doped indium-phosphorus material systems on the substrate, which generally include InGaAsP, InAlGaAs, InAlAs, InGaAs, and the like. The specific epitaxial wafer parameters are determined and optimized according to the specific structure, and the method for preparing the epitaxial wafer for forming the laser is a mature technology in the prior art, and is not described herein again.
And 102, manufacturing the large-chirp grating by adopting a reconstruction-equivalent chirp technology.
In step 102, the reconstruction-equivalent chirp technique may be equivalently implemented by first fabricating a uniform seed grating pattern by photolithography using a phase mask, and then fabricating a sampling grating pattern by ultraviolet lithography; the method can also be equivalently realized by firstly utilizing the nanoimprint technology to manufacture the uniform seed grating pattern and then manufacturing the sampling grating pattern through ultraviolet lithography.
And 103, carrying out epitaxial growth on the large chirped grating by adopting a secondary epitaxial growth technology.
In step 103, the secondary epitaxial growth technique is to place the prepared large chirped grating sample into the MOCVD apparatus again for epitaxial growth of a material, and includes a ridge waveguide layer and a contact layer, where the ridge waveguide layer and the contact layer are in the buffer layer.
And 104, etching the ridge waveguide, manufacturing an electrode and carrying out electric isolation on the grating structure after the secondary epitaxial growth.
In step 104, the etching of the ridge waveguide, the manufacturing of the electrode, and the electrical isolation are performed in the prior art, and further description thereof is omitted.
Fig. 4 is a flowchart of an embodiment of a method for manufacturing a semiconductor laser device including a reconstruction-equivalent chirped grating, where the manufacturing method provided in the embodiment of the present invention includes a reconstruction-equivalent grating manufacturing method, and specifically includes the following steps:
and 101, determining and optimizing a primary epitaxial wafer by adopting a primary epitaxial growth technology, wherein the primary epitaxial wafer comprises the active layer and the large-chirp grating.
And 105, spin-coating photoresist on the large chirped grating, and manufacturing a uniform seed grating pattern by a holographic exposure method.
And 106, manufacturing a pattern of the seed grating by ultraviolet lithography.
And 107, manufacturing a grating structure with an undulating surface on the large-chirp grating by a developing and etching method.
And 103, carrying out epitaxial growth on the large chirped grating by adopting a secondary epitaxial growth technology.
And 104, etching the ridge waveguide, manufacturing an electrode and carrying out electric isolation on the grating structure after the secondary epitaxial growth.
It is to be noted that the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
The above description is only an example of the present invention, and is not intended to limit the present invention. Various modifications and alterations to this invention will become apparent to those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the scope of the claims of the present invention.
Claims (8)
1. A semiconductor laser device comprising an active layer, a buffer layer, and further comprising: p electrode, electric isolation, large chirp grating, N electrode;
the number of the P electrodes is more than 2;
the electrical isolation is located between adjacent P electrodes;
the large chirped grating is a linear chirped grating and is positioned below the P electrodes, phase shifts are uniformly inserted into the large chirped grating, the number of the phase shifts is the same as that of the P electrodes, each phase shift corresponds to 1P electrode, the large chirped grating is used for forming a multi-longitudinal-mode resonant cavity, and the minimum value and the maximum value of the longitudinal-mode lasing working wavelength corresponding to the multi-longitudinal-mode resonant cavity correspond to the minimum period and the maximum period of the large chirped grating;
the active layer is positioned below the large-chirp grating;
the buffer layer is positioned below the active layer;
the number of the N electrodes is 1, and the N electrodes are positioned below the buffer layer;
when the relative position of the phase shift and the center of the corresponding P electrode is L/2n, the device realizes n-1 uniform interval lasing working wavelength switching, and the switching interval is (lambda 2-lambda 1)/n;
when current above a threshold value is applied to the ith and i + 1P electrodes at the same time, and transparent current is applied to the rest P electrodes, the device emits the ith wavelength with the wavelength value of lambda 1+ i (lambda 2-lambda 1)/n;
wherein, L is the cavity length of the device, n is the number of the P electrodes, i is the serial number of the P electrodes, 1< i < n-1, and λ 1 and λ 2 are the minimum and maximum values of the working wavelength of the large chirp grating.
2. The semiconductor laser device according to claim 1, wherein the magnitude of the phase shift is 0 or more and 2 or less.
3. The semiconductor laser device of claim 1, wherein the length of the P-electrodes is less than L/n, where L is the cavity length of the device and n is the number of P-electrodes.
4. The semiconductor laser device according to claim 1, wherein the large chirped grating and the intermediate insertion phase shift of the large chirped grating are fabricated by an electron beam exposure method.
5. The semiconductor laser device of claim 1, wherein the large chirped grating, the large chirped grating intermediate insertion phase shift is fabricated using a step-wise lithography technique.
6. The semiconductor laser device of claim 1, wherein the large chirped grating, the large chirped grating intermediate insertion phase shift is fabricated using a reconstruction-equivalent chirp technique.
7. A method for manufacturing a semiconductor laser device, which is used for manufacturing the device of any one of claims 1 to 6, and is characterized by comprising the following steps:
determining and optimizing a primary epitaxial wafer by adopting a primary epitaxial growth technology, wherein the primary epitaxial wafer comprises the active layer and the large-chirp grating;
manufacturing the large-chirp grating by adopting a reconstruction-equivalent chirp technology;
carrying out epitaxial growth on the large-chirp grating by adopting a secondary epitaxial growth technology;
and etching the ridge waveguide, manufacturing an electrode and carrying out electric isolation treatment on the grating structure after the secondary epitaxial growth.
8. A method as claimed in claim 7 wherein said step of using a reconstruction-equivalent chirp technique to fabricate said large-chirp grating further comprises:
spin-coating photoresist on the large chirped grating, and making a uniform seed grating pattern by a holographic exposure method;
making a pattern of the seed grating by ultraviolet lithography;
and manufacturing a grating structure with an undulating surface on the large-chirp grating by developing and etching methods.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1866647A (en) * | 2005-05-16 | 2006-11-22 | 中国科学院半导体研究所 | Double-wavelength series connection distribution feedback laser adapted to coarse wavelength division multiplexing |
| CN103066494A (en) * | 2013-01-05 | 2013-04-24 | 华中科技大学 | Tunable semiconductor laser |
| CN104638514A (en) * | 2013-11-08 | 2015-05-20 | 南京大学科技园发展有限公司 | Method and device for realizing low-cost tunable semiconductor laser based on reconstruction-equivalent chirp and series technologies |
| CN106207748A (en) * | 2016-08-26 | 2016-12-07 | 武汉光迅科技股份有限公司 | A kind of semiconductor laser with tunable and manufacture method thereof and using method |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1866647A (en) * | 2005-05-16 | 2006-11-22 | 中国科学院半导体研究所 | Double-wavelength series connection distribution feedback laser adapted to coarse wavelength division multiplexing |
| CN103066494A (en) * | 2013-01-05 | 2013-04-24 | 华中科技大学 | Tunable semiconductor laser |
| CN104638514A (en) * | 2013-11-08 | 2015-05-20 | 南京大学科技园发展有限公司 | Method and device for realizing low-cost tunable semiconductor laser based on reconstruction-equivalent chirp and series technologies |
| CN106207748A (en) * | 2016-08-26 | 2016-12-07 | 武汉光迅科技股份有限公司 | A kind of semiconductor laser with tunable and manufacture method thereof and using method |
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