CN116111028A

CN116111028A - Full-color Micro-LED display device and manufacturing method thereof

Info

Publication number: CN116111028A
Application number: CN202211643648.1A
Authority: CN
Inventors: 刘斌芝
Original assignee: Shenzhen Stan Technology Co Ltd
Current assignee: Shenzhen Stan Technology Co Ltd
Priority date: 2022-12-20
Filing date: 2022-12-20
Publication date: 2023-05-12

Abstract

The application provides a full-color Micro-LED quantum dot display device and a manufacturing method thereof. The display device of the present application includes: a silicon-based substrate; growing an epitaxial layer formed on a first side of a silicon-based substrate; micro-LED arrays formed on the epitaxial layer by a photolithography process; a quantum dot retaining wall, wherein a second side of the silicon substrate opposite to the first side is formed by the structure of the silicon substrate, and a quantum dot space is defined between adjacent quantum dot retaining walls; and quantum dots disposed in the quantum dot space to provide pixels of the display device, the quantum dots providing RGB monochromatic light in combination with the Micro-LED array. The design of the quantum dot retaining wall is improved, and full-color display with high resolution is achieved in an economic and simplified mode.

Description

Full-color Micro-LED display device and manufacturing method thereof

Technical Field

The present application relates to Micro-LED display technology, and in particular, to a full-color Micro-LED display device and a corresponding manufacturing method.

Background

The Micro-LED display technology has the characteristics of low power consumption, high reliability, wide color gamut, high brightness and high contrast, and is a new generation of semiconductor display technology. In a Micro-LED display device, a fabricated high density Micro-LED array is transferred and bonded to a substrate with a driving circuit. The substrate typically includes a lower electrode and a transistor, and may be a rigid, flexible, transparent or opaque substrate, such as a sapphire substrate and a silicon-based substrate. And then, manufacturing a protective layer and an upper electrode on the substrate by using a physical deposition process, and packaging the upper substrate to complete the Micro-LED display chip with the basic structure. Micro-LED display chips can be made into Micro or large displays, and rigid flat or flexible curved displays.

Typical Micro-LEDs are Micro PN junction light emitting diodes, usually composed of direct bandgap semiconductor materials, commonly used semiconductor materials are GaN, gaP, gaAs. Different combinations of Micro-LEDs provide pixels of different light emission colors to provide a full color picture.

The quantum dot technology is combined with the Micro-LED display technology, so that a better color display effect can be obtained. The quantum dots are artificial nanoscale semiconductor materials capable of transmitting electrons and have photovoltaic characteristics and nano characteristics, and one remarkable characteristic is that quantum dots with different materials and sizes can emit light with specific colors through optical or electrical excitation, for example, light emitted by LEDs with specific colors irradiates on selected quantum dot materials to obtain pure monochromatic light with pure colors. The quantum dots can be fabricated into photoluminescent and electroluminescent elements for use in a variety of display devices.

The quantum dot retaining wall is required to be arranged on the substrate of the display panel, however, the existing manufacturing method has technical difficulty in manufacturing the quantum dot retaining wall with higher height, and the manufactured quantum dot retaining wall is not high enough, so that a better light-shielding effect cannot be realized.

Disclosure of Invention

The purpose of the present application is to provide a full-color Micro-LED quantum dot display device and a manufacturing method thereof.

To achieve the above object, a first aspect of the present application proposes a full-color Micro-LED quantum dot display device, including: a silicon-based substrate; an epitaxial layer formed on a first side of the silicon-based substrate; a Micro-LED array formed on the epitaxial layer by a photolithography process; the quantum dot retaining walls are formed by the self structure of the silicon substrate, and a quantum dot space is defined between adjacent quantum dot retaining walls; and quantum dots disposed in the quantum dot space to provide pixels of the display device, the quantum dots providing RGB monochromatic light in combination with the Micro-LED array.

Optionally, a quantum dot retaining wall is formed in a second side of the silicon-based substrate opposite the first side by at least one of a photolithography process and a deep silicon etching process.

Optionally, the quantum dot retaining wall has a rectangular cross section, a stepped cross section, or a circular arc cross section.

Alternatively, the silicon substrate is thinned to 10-50 μm by a chemical mechanical polishing process at the second side of the silicon substrate before a photolithography process and a deep silicon etching process for forming the quantum dot barrier wall.

Alternatively, the quantum dot space has a width of 1 to 2 μm.

Optionally, the thickness of the quantum dot retaining wall is less than 1 μm, and the height is 30-60 μm.

Optionally, the quantum dots are disposed in the quantum dot space by coating, implantation, deposition, and/or in-situ growth.

Optionally, the Micro-LED array comprises blue LEDs and/or violet LEDs.

Optionally, the material of the epitaxial layer comprises GaN, gaNAs, gaP, alGaAs, inP, alInGaP and/or combinations thereof.

According to a second aspect of the present application, there is provided a method for manufacturing a full-color Micro-LED quantum dot display device, comprising the steps of:

providing a silicon-based substrate;

growing an epitaxial layer on a first side of a silicon-based substrate;

bonding a glass carrier plate above the Micro-LED array to cover the Micro-LED array;

removing a second side portion of the silicon-based substrate opposite the first side to thin the silicon-based substrate;

forming quantum dot retaining walls from the structure of the silicon substrate by using photoetching and deep silicon etching processes on the second side of the silicon substrate, wherein quantum dot spaces are defined between adjacent quantum dot retaining walls; and

quantum dots are arranged in a quantum dot space to provide pixels of a display device, the quantum dots providing RGB monochromatic light in combination with a Micro-LED array.

The technical scheme provided by the embodiment of the application comprises the following beneficial effects: the quantum dot retaining wall is directly formed in the structure of the silicon substrate, the whole structure of the chip is simplified, the manufacturing height of the quantum dot retaining wall in the prior art is broken through, and the higher quantum dot retaining wall can be manufactured; the existing semiconductor processing technology and equipment can be directly utilized, so that the cost is saved; the edge of the manufactured quantum dot retaining wall is neat, and the section can be selected according to actual requirements.

Drawings

The accompanying drawings, which are incorporated in and constitute a part of this application, are included to provide a further understanding of the application and to provide a further understanding of the application with regard to the other features, objects and advantages of the application. The drawings of the illustrative embodiments of the present application and their descriptions are for the purpose of illustrating the present application and are not to be construed as unduly limiting the present application. In the drawings:

fig. 1 is a schematic cross-sectional view of a display panel portion of a full-color Micro-LED display device according to an embodiment of the present application;

fig. 2 to 8 are schematic views of respective steps in a method of manufacturing a full-color Micro-LED display device according to an embodiment of the present application; and

fig. 9 is a general flow chart of the manufacturing method illustrated in fig. 2 to 8.

Detailed Description

In order to make the present application solution better understood by those skilled in the art, the following description will be made in detail and with reference to the accompanying drawings in the embodiments of the present application, it is apparent that the described embodiments are only some embodiments of the present application, not all embodiments. All other embodiments, which can be made by one of ordinary skill in the art based on the embodiments herein without making any inventive effort, shall fall within the scope of the present application.

It should be noted that the terms "first," "second," and the like in the description and claims of the present application and the above figures are used for distinguishing between similar objects and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used may be interchanged where appropriate in order to describe the embodiments of the present application described herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.

In the present application, the terms "upper", "lower", "left", "right", "front", "rear", "top", "bottom", "inner", "outer", "middle", "vertical", "horizontal", "lateral", "longitudinal" and the like indicate an azimuth or a positional relationship based on that shown in the drawings. These terms are used primarily to better describe the present application and its embodiments and are not intended to limit the indicated device, element or component to a particular orientation or to be constructed and operated in a particular orientation.

Also, some of the terms described above may be used to indicate other meanings in addition to orientation or positional relationships, for example, the term "upper" may also be used to indicate some sort of attachment or connection in some cases. The specific meaning of these terms in this application will be understood by those of ordinary skill in the art as appropriate.

Furthermore, the terms "mounted," "configured," "provided," "connected," "coupled," and "sleeved" are to be construed broadly. For example, "connected" may be in a fixed connection, a removable connection, or a unitary construction; may be a mechanical connection, or an electrical connection; may be directly connected, or indirectly connected through intervening media, or may be in internal communication between two devices, elements, or components. The specific meaning of the terms in this application will be understood by those of ordinary skill in the art as the case may be.

Hereinafter, a Full color Micro-LED quantum dot (Full color Micro-LED dots) display device and a method of manufacturing the same according to the present application will be described by way of example only with reference to the accompanying drawings.

Conventionally, an LED display device displays an image by controlling RGB semiconductor LEDs to emit light, each pixel in the display panel is composed of a plurality of LEDs, different colors are displayed by the light emission and non-light emission of each group of LED pixels, the different voltage and power-on/off conditions of the LED pixels determine the colors of the display thereof, and full-color images are displayed by means of a combination of the voltage and power-on/off.

One advantage of quantum dots in combination with LED display technology is that the structure of the LED array and display panel can be simplified while providing a display that is purer and more nearly natural light colors. Typically, quantum dots are arranged in a quantum dot carrier layer below or above an LED array, the light emission color of the LED is selected to be at least one of red light, green light or blue light, and the light emitted by the LED irradiates the quantum dots below or above to excite the quantum dots to emit monochromatic light with different colors, so that full-color display is realized.

Although the quantum dot technology can significantly improve the color quality of the Micro-LED display device, the practical application of the Micro-LED quantum dot display device requires that the light conversion efficiency and the anti-environmental interference capability of the Micro-LED quantum dot display device be ensured, and the wide application of the Micro-LED quantum dot display device in the market depends on the volume capability and the manufacturing cost.

The display device and the corresponding manufacturing method can solve at least part of the problems.

Fig. 1 shows the basic structure of a full-color Micro-LED quantum dot display device according to the present application, focusing on the display panel section.

As illustrated in fig. 1, a display device according to the present application generally includes: a silicon-based substrate 12, a Micro-LED array 14, quantum dot barriers 22, and quantum dots 26.

Conventionally, the substrate is a carrying body of the display panel, and as an important heat dissipation component of the LED display device, the substrate material has good heat dissipation performance and circuit connection function. The structure of the silicon-based substrate 12, epitaxial layer 14 and Micro-LED array 16 used herein are shown in fig. 2 as the basic structure of the display device of the present application. For the sake of clarity of the following description, the side of the silicon-based substrate 12 on which the epitaxial layer 14 is located is referred to as the first side, and the side of the silicon-based substrate 12 opposite to the first side is referred to as the second sideOne side is referred to as the second side. In accordance with the principles of the present application, the use of a silicon-based substrate 12 has the advantage that silicon can provide a substrate of sufficiently large size, good processability, high thermal conductivity, good electrical and thermal stability, and small thermal mismatch with the LED chip. The epitaxial layer 14 is epitaxially grown on the silicon-based substrate 12, and the material of the epitaxial layer 14 may be GaN. In one embodiment, adjusting the ratio between Ga atoms and N atoms, or increasing more material and adjusting the ratio between multiple atoms, may better match the lattice structure and thermal properties of the silicon substrate. In one embodiment, the added material may be indium or arsenic. The material of epitaxial layer 14 may also include GaAs, gaP, alGaAs, inP, alInGaP and/or combinations thereof _。 Similarly, by adjusting the ratio of the multiple atoms, a good match with the silicon substrate 12 can be obtained, and a crack-free large-area epitaxial layer can be obtained. In addition, trimming the structure of the silicon-based substrate 12 may improve the thermal match between the substrate material and the epitaxial layer material, as described below.

In accordance with the present application, the Micro-LED array 16 is formed directly in the epitaxial layer 14 in a photolithographic process, and specific steps may include exposure, development, etching. This approach is different from the usual approach of making Micro-LED arrays. In a common manner, the individual Micro-LEDs are first designed into Micro-LED arrays in a thin-film, miniaturized, and arrayed manner, and then the Micro-LED arrays are integrated into a silicon-based substrate in a monolithically bonded or mass-transferred manner. The circuit pattern formed on the silicon substrate is used for supplying power to the Micro-LED array integrated on the silicon substrate, so that the Micro-LED array emits light. However, according to the present application, the Micro-LED array 16 formed directly in the epitaxial layer 14 may be connected to an external CMOS drive circuit board (not shown) via which power is supplied to emit light. The drive circuit board applies a forward voltage to the Micro-LED array 16, and current flows from the Micro-LED array 16 through the recombination of electrons and holes in the active region of the Micro-LED to emit red, green and blue light of a single color, the specific color being determined by the band gap of the semiconductor material used for the PN junction in the Micro-LED. The Micro-LEDs in different areas can emit light by supplying power through different connecting lines in the driving circuit board, and the intensity of light can be adjusted by changing the current. According to embodiments of the present application, the Micro-LEDs may be on the order of 1-50 μm in size, which range allows for processing of the desired Micro-LEDs in a mature device. The Micro-LED array 16 may include blue LEDs and/or violet LEDs that, by recombination with red or green quantum dots, may provide pure RGB base color light, as described below. According to the present application, the full width half maximum FWHM of the dominant wavelength in the light emission spectrum of the Micro-LED array 16 is only about 20nm, which provides extremely high color saturation, typically greater than 120% NTSC, and thus provides an ultra-high color gamut display device that is significantly superior to existing display devices.

According to embodiments of the present application, a glass carrier plate 20 may be used in the process of manufacturing a display panel, which is bonded to a first side of the silicon-based substrate 12 (the side on which the Micro-LED array 16 is formed) through an adhesive layer 18, as a cover panel for the Micro-LED array 16, and also as a carrier panel in the process of manufacturing a display device. Specifically, as shown in fig. 3, an adhesive layer 18, in one embodiment a glue layer, is applied over the formed Micro-LED array 16, and then a glass carrier plate 20 is placed over the glue layer 18, bonding the glass carrier plate 20 to the first side of the silicon-based substrate 12 by gluing. According to various embodiments, the glass carrier plate 20 and the adhesive layer 18 may be removed after the display panel is manufactured.

In one embodiment, bonding of the glass carrier plate 20 may be achieved by applying heat/voltage or pressure, the glass carrier plate 20 being directly bonded to the epitaxial layer 14 (i.e., two semiconductor material devices). In one embodiment, a silicon/silicon bonding process and a silicon/glass bonding process may be used.

The quantum dot retaining wall 22 is a zoned structure of quantum dots 26 to be arranged, which ensures spatial azimuthal alignment of the quantum dots 26 with the Micro-LED array 16, while preventing optical crosstalk between different quantum dot 26 regions. In accordance with the principles of the present application, the quantum dot retaining wall 22 is made from the structure of the silicon-based substrate 12 itself. That is, instead of additionally providing a specific quantum dot retaining wall layer structure and forming a quantum dot retaining wall therein, the quantum dot retaining wall 22 is directly formed in the structure of the silicon-based substrate 12 itself. Although indicated with different reference numbers, the quantum dot retaining wall 22 according to the present application is essentially derived from the structure of the silicon-based substrate 12 itself. The fabrication of the quantum dot retaining wall 22 by the structure of the silicon-based substrate 12 itself not only simplifies the structure of the display panel, but also allows the fabrication of the quantum dot retaining wall 22 having a height greater than that of the prior art. This is because the quantum dot barrier wall with increased height can be manufactured in an economically reliable manner using a mature semiconductor process for silicon processing, while the elimination of the need for an additional layer structure for manufacturing the quantum dot barrier wall allows for the manufacture of higher quantum dot barrier walls while ensuring that the thickness of the display panel is not increased. Further, since silicon is an indirect energy gap material having a relatively large light absorption, the quantum dot retaining wall 22 formed by the structure of the silicon-based substrate 12 itself can well prevent optical crosstalk in the lateral direction.

Specifically, according to embodiments of the present application, quantum dot retaining walls 26 are formed in a second side of the silicon-based substrate 12 opposite the first side by a photolithography process and a deep silicon etching process. For the photolithography process, a photoresist layer 24 is first applied on the second side of the silicon-based substrate 12, and then a quantum dot retaining wall pre-pattern, which is the same as or opposite to the region of the quantum dot retaining wall 22 to be formed, is formed in the photoresist layer 24 by a photolithography system, as shown in fig. 5. For the Micro-LED quantum dot display device of the present application, the quantum dot barrier wall pre-pattern may be formed using conventional optical lithography techniques or nanolithography techniques, including but not limited to: extreme ultraviolet lithography, electron beam lithography, X-ray lithography, laser interference lithography, focused ion beam lithography, maskless lithography, and nanoimprint lithography.

After the quantum dot retaining wall pre-pattern is formed in the photoresist layer 24, the quantum dot retaining wall 22 is formed in the silicon-based substrate 12 by a deep silicon etching process. The deep silicon etching process removes the portion of the silicon substrate 12 corresponding to the prefabricated pattern of the quantum dot retaining wall in the photoresist layer 24, and the remaining portion of the silicon substrate 12 constitutes the quantum dot retaining wall 22, as shown in fig. 6. The deep silicon etching operation may be performed using conventional Bosch, cry, or Mix-gas processes to obtain quantum dot barriers 22 with flat interfaces and steep sidewalls using high etch rates, high aspect ratios. By the processing method, the quantum dot retaining wall 22 is formed by the self structure of the silicon substrate 12, so that the manufacturing process is simplified and the manufacturing cost is saved. With continued reference to fig. 7, after etching is completed, photoresist layer 24 is removed and quantum dot spaces 22a are defined between adjacent quantum dot barriers 22 on silicon substrate 12 for disposing quantum dots 26 therein, shown in fig. 8. According to an embodiment of the present application, the thickness of the quantum dot retaining wall 22 may be less than 1 μm, and the width of the quantum dot space 22a may be 1 to 2 μm. The height of the quantum dot retaining wall 22 corresponds to the depth of the quantum dot space 22a, and according to the principles of the present application, the quantum dot retaining wall 22 having a height of between 1 and 100 μm, that is, the depth range of the quantum dot space 22a, may be formed. Compared with the prior art, the height of the quantum dot retaining wall manufactured by the method is remarkably increased. In the prior art, an additional retaining wall layer is used for manufacturing a quantum dot retaining wall, the height of the obtained quantum dot retaining wall is usually within 10 mu m, and the quantum dot retaining wall with the height of more than 10 mu m is not easy to process. The increased height of the quantum dot barrier wall 22 allows a greater number of quantum dots 26 per unit area to increase the brightness of the emitted light and more flexibility in the choice of a variety of quantum dot materials. In one embodiment, quantum dot retaining walls 22 between 30 and 60 μm in height achieve a good balance between substrate material utilization and substrate structural strength. Further, the quantum dot retaining wall 22 and the quantum dot space 22a provided in the present application allow for providing sufficiently dense pixel dots in a unit area, thereby providing a sufficiently high resolution for a display device.

In particular, the photolithography and deep silicon etching processes described above may be performed at least once, and multiple times of photolithography and deep silicon etching may provide a quantum dot space 22a having a gradient in the longitudinal direction, realizing a more diverse arrangement of quantum dots 26. In one embodiment, the quantum dot retaining wall 22 may have a rectangular cross section, and the quantum dot retaining wall 22 having the rectangular cross section may be manufactured simply and with high precision, and may be obtained by one photolithography and etching process. In one embodiment, the quantum dot retaining wall 22 may have a stepped cross section or a circular arc cross section. The quantum dot retaining wall 22 with the circular arc cross section can also be obtained by using one photoetching and etching process, and meanwhile, the internal light reflection effect provided by the stepped cross section and the circular arc cross section is beneficial to increasing the light intensity, converging light rays and obtaining better light emitting effect.

In particular, before the photolithography process and the deep silicon etching process described above, the second side portion of the silicon substrate 12 may be removed by a Chemical Mechanical Polishing (CMP) process to thin the silicon substrate 12, in an embodiment, to 10 to 50 μm, as shown in fig. 4, depending on the light conversion efficiency of the quantum dots 26. The partial removal of the thickness of the silicon-based substrate 12 can reduce the chip package volume, reduce thermal resistance, improve the heat dissipation performance of the semiconductor device, and reduce thermal mismatch between the silicon-based substrate 12 and the epitaxial layer 14 and loss of light emission from the quantum dots 26. The appropriate thickness of the silicon-based substrate 12 may be selected depending on the depth of the quantum dot retaining wall 22 desired to be fabricated.

The quantum dots 26 are used to provide pure RGB base light in conjunction with the Micro-LED array 16, as described above. The quantum dots 26 are disposed in the quantum dot space 22a defined by the quantum dot retaining wall 22. According to embodiments of the present application, the quantum dots 26 may be coated, injected, deposited, and/or grown in situ disposed in the quantum dot space 22a，Reaching the required height. In particular, although the quantum dots 26 disposed in the quantum dot space 22a are shown to have the same height in fig. 8, the quantum dots 26 for providing different colors of light may be disposed to have different heights in practice. In one embodiment, the quantum dots 26 providing red light and green light may be made of materials having different light conversion efficiencies, and the heights of the quantum dots 26 may be set relatively low for materials having high light conversion efficiencies, and the heights of the quantum dots 26 may be set relatively high for materials having relatively low light conversion efficiencies. The quantum dots 26 disposed in each quantum dot space 22a may be referred to as one quantum dot unit, each quantum dot unit providing one pixel. The quantum dots 26 are photoluminescent via the Micro-LED array 16 to provide red, green and blue monochromatic light, i.e., the luminescence of the Micro-LED array 16 together with the photoluminescence from the quantum dots 26 thus produced achieves luminescence of one pixel to provide a full color image. In one embodiment, among three adjacent quantum dot spaces 22a, two quantum dot spaces 22a are provided with quantum dots 26 capable of providing red and green light, and the other quantum dot space 22a is not filled with quantum dots 26 and only blue light Mic is usedThe blue light provided by the ro-LED array 16 effects the emission of light from the pixel. The denser the quantum dot space 22a, the more pixels are provided per unit area, thereby enabling to provide a sufficiently high resolution for the display device. Therefore, the resolution of the display device according to the present application is determined by the degree of packing of the quantum dot units (i.e., the quantum dot space 22 a), not depending on the size and packing of the Micro-LED array 16. According to a preferred embodiment, the quantum dots 26 may constitute 1-2 μm pixels, thus providing a very fine and sharp image. Depending on the application, quantum dots 26 of different materials and sizes may be selected to provide corresponding red, green and blue light. In one example of the present application, the quantum dots 26 may be made of Cd of 2-10 nm to provide red, green, and blue light.

The Micro-LED quantum dot display device according to the embodiment of the application has the following advantages:

the Micro-LED array 16 is directly manufactured in the epitaxial layer 14, the quantum dot retaining wall 22 is formed through the structure of the silicon substrate 12, the light blocking effect is excellent, the structure of the display panel is simplified, and the manufacturing complexity of the quantum dot display device is reduced;

the variation of the structure of the silicon-based substrate 12 itself allows for an optimized configuration of substrate materials and epitaxial layer materials;

the quantum dot retaining wall 22 and the Micro-LED array 16 are directly formed on the silicon substrate 12, so that light loss can be effectively reduced, luminous efficiency is improved, an optimized luminous effect is provided, and full-color display with very high resolution is realized.

In addition, according to the principle of the invention, a manufacturing method of the full-color Micro-LED quantum dot display device is also provided. Fig. 9 shows a flow chart of an example manufacturing method according to an embodiment of the present application, which may include the steps of:

step S1: a silicon-based substrate 12 is provided, an epitaxial layer 14 is grown on a first side of the silicon-based substrate 12, and then a Micro-LED array 16 (fig. 2) is formed on the epitaxial layer 14 by a photolithographic process.

Step S2: a glass carrier plate 20 is bonded to the epitaxial layer 14, the glass carrier plate 20 covering the Micro-LED array 16 (fig. 3).

Step S3: a second side portion of the silicon-based substrate 12 opposite the first side is removed to thin the silicon-based substrate 12 (fig. 4).

Step S4: a photoresist layer 24 is applied on the thinned silicon-based substrate 12, and a quantum dot retaining wall pre-pattern (fig. 5) corresponding to or opposite to the quantum dot retaining wall 22 to be formed is formed in the photoresist layer 24 through a photolithography process.

Step S5: quantum dot barriers 22 (fig. 6) corresponding to the quantum dot barrier wall pre-pattern in photoresist layer 24 are formed in thinned silicon substrate 12 by a deep silicon etching process.

Step S6: the photoresist layer 24 over the silicon-based substrate 12 is removed to obtain the fabricated quantum dot retaining walls 22, with quantum dot spaces 22a defined between adjacent quantum dot retaining walls 22 (fig. 7).

Step S7: quantum dots 26 are disposed in the quantum dot spaces 22a, and the quantum dots 26 in each quantum dot space 22a constitute one quantum dot unit to provide a pixel of a display panel (fig. 8).

The specific manner in which the operations of the units in the above embodiments are performed has been described in detail in the embodiments related to the method, and will not be described in detail here.

In summary, in the present application, by changing the design of the quantum dot retaining wall 22, the mature semiconductor processing equipment and process can manufacture the quantum dot retaining wall 22 with sufficient density, so as to reduce the manufacturing difficulty and cost, improve the throughput of the display device, and realize full-color display with high resolution.

It should be noted that the steps illustrated in the flowcharts of the figures may be performed in a computer system such as a set of computer executable instructions, and that although a logical order is illustrated in the flowcharts, in some cases the steps illustrated or described may be performed in an order other than that illustrated herein.

It will be apparent to those skilled in the art that the elements or steps of the application described above may be implemented in a general purpose computing device, they may be concentrated on a single computing device, or distributed across a network of computing devices, or they may alternatively be implemented in program code executable by computing devices, such that they may be stored in a memory device for execution by the computing devices, or they may be separately fabricated into individual integrated circuit modules, or multiple modules or steps within them may be fabricated into a single integrated circuit module. Thus, the present application is not limited to any specific combination of hardware and software.

The foregoing description is only of the preferred embodiments of the present application and is not intended to limit the same, but rather, various modifications and variations may be made by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principles of the present application should be included in the protection scope of the present application.

Claims

1. A full-color Micro-LED quantum dot display device is characterized by comprising:

a silicon-based substrate;

an epitaxial layer grown on a first side of the silicon-based substrate;

a Micro-LED array formed on the epitaxial layer by a photolithography process;

a quantum dot retaining wall, wherein a second side of the silicon-based substrate opposite to the first side is formed by the structure of the silicon-based substrate, and a quantum dot space is defined between adjacent quantum dot retaining walls; and

quantum dots disposed in the quantum dot space to provide pixels of the display device, the quantum dots providing RGB monochromatic light in combination with the Micro-LED array.

2. The display device of claim 1, wherein the quantum dot barrier wall is formed in the silicon-based substrate by at least one of a photolithography process and a deep silicon etching process.

3. The display device of claim 2, wherein the quantum dot retaining wall has a rectangular cross section, a stepped cross section, or a circular arc cross section.

4. The display device according to claim 1, wherein the silicon substrate is thinned to 10-50 μm by a chemical mechanical polishing process at a second side of the silicon substrate before the photolithography process and the deep silicon etching process for forming the quantum dot barrier wall.

5. The display device according to any one of claims 1 to 4, wherein the quantum dot space has a width of 1 to 2 μm.

6. The display device of any one of claims 1 to 4, wherein the quantum dot retaining wall has a thickness of less than 1 μm and a height of 30 to 60 μm.

7. The display device of any one of claims 1 to 4, wherein the quantum dots are disposed in the quantum dot space by coating, injection, deposition and/or in-situ growth.

8. The display device according to any one of claims 1 to 4, wherein the Micro-LED array comprises blue LEDs and/or violet LEDs.

9. The display device according to any one of claims 1 to 4, wherein the material of the epitaxial layer comprises GaN, gaNAs, gaP, alGaAs, inP, alInGaP and/or a combination thereof.

10. The manufacturing method of the full-color Micro-LED quantum dot display device is characterized by comprising the following steps of:

providing a silicon-based substrate;

forming an epitaxial layer on a first side of the silicon-based substrate;

forming a Micro-LED array on the epitaxial layer through a photoetching process;

forming quantum dot retaining walls on the second side of the silicon base plate by using photoetching and deep silicon etching processes from the structure of the silicon base plate, wherein quantum dot spaces are defined between adjacent quantum dot retaining walls; and

quantum dots are arranged in the quantum dot space to provide pixels of the display device, the quantum dots providing RGB monochromatic light in combination with the Micro-LED array.