CN116106962A - Detection device - Google Patents

Abstract

The invention provides a detection device, which comprises a substrate, a switching element, a photoelectric element and a scintillator. The switch element is arranged on the substrate. The photoelectric element is arranged on the substrate and coupled with the switch element. The photovoltaic element comprises a semiconductor, and the semiconductor comprises a monocrystalline material or a polycrystalline material. And a scintillator, wherein the scintillator at least partially overlaps the photocell in a top view of the detection device. The detection device can improve the detection efficiency.

Description

Detection device

Technical Field

The present invention relates to a detection device.

Background

The detection layer of the detection device generally comprises an amorphous silicon material; however, the amorphous silicon material has a lot of defects due to its crystal phase structure and the formation process, the defects limit the movement of the carriers generated by the detection layer, and the carriers limited to move are released only when the detection device is operated later, so that the problem of delayed generation of the detected image or image retention is caused.

Disclosure of Invention

The invention provides a detection device which can reduce the problem of delay of image generation or image residue of detection and can improve the detection efficiency.

According to an embodiment of the present invention, a detection device includes a substrate, a switching element, a photoelectric element, and a scintillator. The switch element is arranged on the substrate. The photoelectric element is arranged on the substrate and coupled with the switching element, the photoelectric element comprises a semiconductor, and the semiconductor comprises single crystal material or polycrystalline material. And a scintillator, wherein the scintillator at least partially overlaps the photocell in a top view of the detection device.

In order to make the above features and advantages of the present invention more comprehensible, embodiments accompanied with figures are described in detail below.

Drawings

FIG. 1 is a schematic partial cross-sectional view of a detecting device according to an embodiment of the present invention;

FIG. 2A is a schematic top view of a portion of a detecting device according to an embodiment of the invention;

FIG. 2B is a schematic cross-sectional view taken along section line A-A' of FIG. 2A;

FIG. 3A is a schematic top view of a detecting device according to another embodiment of the present invention;

FIG. 3B is a schematic cross-sectional view taken along line B-B' of FIG. 3A;

FIG. 4A is a schematic top view of a portion of a detecting device according to another embodiment of the present invention;

FIG. 4B is a schematic cross-sectional view taken along line C-C' of FIG. 4A.

Detailed Description

The present invention may be understood by reference to the following detailed description taken in conjunction with the accompanying drawings, wherein, for the sake of clarity and simplicity of the drawing, various drawing figures illustrate only a portion of the electronic device and certain elements in the drawing figures are not necessarily drawn to scale. In addition, the number and size of the elements in the drawings are illustrative only and are not intended to limit the scope of the invention.

Certain terms are used throughout the description and following claims to refer to particular components. Those skilled in the art will appreciate that electronic device manufacturers may refer to a component by different names. It is not intended to distinguish between components that differ in function but not name. In the following description and claims, the terms "include," have, "and the like are open-ended terms, and thus should be interpreted to mean" include, but not limited to …. Thus, when the terms "comprises," "comprising," "includes" and/or "including" are used in the description of the present invention, they specify the presence of stated features, regions, steps, operations, and/or components, but do not preclude the presence or addition of one or more other features, regions, steps, operations, and/or components.

Directional terms mentioned herein, such as: "upper", "lower", "front", "rear", "left", "right", etc., are merely directions with reference to the drawings. Thus, the directional terminology is used for purposes of illustration and is not intended to be limiting of the invention. In the drawings, the various figures illustrate the general features of methods, structures and/or materials used in certain embodiments. However, these drawings should not be construed as defining or limiting the scope or nature of what is covered by these embodiments. For example, the relative dimensions, thicknesses, and locations of various layers, regions, and/or structures may be reduced or exaggerated for clarity.

When a corresponding element (e.g., a film layer or region) is referred to as being "on" another element, it can be directly on the other element or other elements can be present therebetween. On the other hand, when an element is referred to as being "directly on" another element, there are no elements therebetween. In addition, when a member is referred to as being "on" another member, the two members have an up-and-down relationship in a top view, and the member may be above or below the other member, and the up-and-down relationship depends on the orientation of the device.

The terms "about," "equal," or "identical," "substantially," or "substantially" are generally interpreted as being within 20% of a given value or range, or as being within 10%, 5%, 3%, 2%, 1%, or 0.5% of the given value or range.

The use of ordinal numbers such as "first," "second," and the like in the description and in the claims is used for modifying an element, and is not by itself intended to exclude the presence of any preceding ordinal number(s) or order(s) of a certain element or another element or order(s) of manufacture, and the use of such ordinal numbers merely serves to distinguish one element having a certain name from another element having a same name. The same words may not be used in the claims and the specification, whereby a first element in the description may be a second element in the claims.

It is to be understood that the following exemplary embodiments may be substituted, rearranged, and mixed for the features of several different embodiments without departing from the spirit of the invention to accomplish other embodiments. Features of the embodiments can be mixed and matched at will without departing from the spirit of the invention or conflicting.

The electrical connection or coupling described in the present invention may refer to a direct connection or an indirect connection, in which case the terminals of the elements on the two circuits are directly connected or connected with each other by a conductor segment, and in which case the terminals of the elements on the two circuits have a switch, a diode, a capacitor, an inductor, other suitable elements, or a combination of the above elements, but not limited thereto.

In the present invention, the thickness, length and width may be measured by an optical microscope, and the thickness may be measured by a cross-sectional image in an electron microscope, but is not limited thereto. In addition, any two values or directions used for comparison may have some error. If the first value is equal to the second value, it implies that there may be about a 10% error between the first value and the second value; if the first direction is perpendicular to the second direction, the angle between the first direction and the second direction may be between 80 degrees and 100 degrees; if the first direction is parallel to the second direction, the angle between the first direction and the second direction may be between 0 degrees and 10 degrees.

The electronic device of the present invention may include a detection device, a display device, an antenna device (e.g. a liquid crystal antenna), a light-emitting touch device, a stitching device, a device with other suitable functions, or a combination of devices with the above functions, but is not limited thereto. The electronic device includes a flexible electronic device, but is not limited to the above. The electronic device may include, for example, liquid crystals (LEDs), light emitting diodes (light emitting diode), quantum Dots (QDs), fluorescence (fluorescence), phosphorescence (phosphorescence), other suitable materials, or combinations thereof. The light emitting diode may include, for example, but not limited to, an organic light emitting diode (organic light emitting diode, OLED), a micro-light emitting diode (micro-LED, mini-LED), or a quantum dot light emitting diode (QLED, QDLED). The electronic device may include an electronic component. The electronic devices may include passive devices and active devices such as capacitors, resistors, inductors, diodes, transistors, etc. The diode may comprise a light emitting diode or a photodiode. The light emitting diode may include, for example, an organic light emitting diode (organic light emitting diode, OLED), a sub-millimeter light emitting diode (mini LED), a micro LED, or a Quantum Dot (QD), such as a QLED, QDLED), or other suitable materials or any permutation and combination of the above materials, but not limited thereto. It should be noted that the electronic device may be any of the above arrangements, but is not limited thereto. Furthermore, the shape of the electronic device may be rectangular, circular, polygonal, a shape with curved edges, or other suitable shape. The electronic device may have a peripheral system such as a drive system, a control system, a light source system, a shelving system …, etc. to support the display apparatus or the stitching device. It should be noted that the electronic device may be any of the above arrangements, but is not limited thereto. The electronic device may include a plurality of components, at least two of which may be assembled to form a combined object. The detection device is used as an electronic device to illustrate the disclosure, but the disclosure is not limited thereto.

The following description of exemplary embodiments of the invention is provided as an illustration of the invention, and is intended to be in the context of the accompanying drawings and description in which like reference numerals are used to designate like or similar parts.

Fig. 1 is a schematic partial cross-sectional view of a detection device according to an embodiment of the invention.

Referring to fig. 1, the detection device 10 of the present embodiment includes a substrate 100, a switching element 200, a photoelectric element 300, and a scintillator 400.

The material of the substrate 100 may include a hard material, a soft material, or a combination thereof. For example, the material of the substrate 100 may include quartz, sapphire (sapphire), polymethyl methacrylate (polymethyl methacrylate, PMMA), polycarbonate (PC), polyimide (PI), polyethylene terephthalate (polyethylene terephthalate, PET), or other suitable materials or combinations thereof, which are not limited to the present invention.

The switching element 200 is disposed on the substrate 100, for example. In some embodiments, the switching element 200 includes a gate G and a semiconductor layer SE, but the invention is not limited thereto. The gate G is disposed on the substrate 100, for example. The material of the gate electrode G may include, for example, molybdenum (Mo), titanium (Ti), tantalum (Ta), niobium (Nb), hafnium (Hf), nickel (Ni), chromium (Cr), cobalt (Co), zirconium (Zr), tungsten (W), aluminum (Al), copper (Cu), silver (Ag), other suitable metals, or alloys or combinations thereof, but the present invention is not limited thereto. The semiconductor layer SE is provided on the gate electrode G, for example. In some embodiments, a gate insulating layer GI may be disposed between the semiconductor layer SE and the gate electrode G. In detail, the gate insulating layer GI may cover the gate electrode G in the top view direction n of the substrate 100, for example, and the semiconductor layer SE may overlap the gate electrode G at least partially in the top view direction n of the substrate 100, for example. In some embodiments, the material of the semiconductor layer SE may include silicon, such as low temperature polysilicon (low temperature polysilicon, LTPS) or amorphous silicon (amorphous silicon, a-Si), but the invention is not limited thereto. For example, the material of the semiconductor layer SE may include, but is not limited to, amorphous silicon, polycrystalline silicon, germanium, compound semiconductors (e.g., gallium nitride, silicon carbide, gallium arsenide, gallium phosphide, indium arsenide, and/or indium antimonide), alloy semiconductors (e.g., siGe alloys, gaAsP alloys, alInAs alloys, alGaAs alloys, gaInAs alloys, gaInP alloys, gaInAsP alloys), or combinations of the foregoing. The material of the semiconductor layer SE may also include, but is not limited to, metal oxides such as Indium Gallium Zinc Oxide (IGZO), indium Zinc Oxide (IZO), indium gallium zinc oxide (IGZTO), or organic semiconductors including polycyclic aromatic compounds, or combinations of the foregoing. In an embodiment, the detecting device 10 may include a plurality of switching elements 200, and different switching elements 200 may include semiconductor layers SE of the same material or semiconductor layers SE of different materials, but the invention is not limited thereto. In some embodiments, the switching element 200 may include a source S and a drain D, which are disposed on the semiconductor layer SE and separated from each other, and are directly contacted with and coupled to the semiconductor layer SE, but the invention is not limited thereto. In other embodiments, an insulating layer is disposed between the semiconductor layer SE and the source S and drain D, wherein the insulating layer has a via hole, and the source S and drain D can be coupled to the semiconductor layer SE through the via hole. It should be noted that, although the switching element 200 is shown as a bottom gate structure, such as a bottom gate thin film transistor, the invention is not limited thereto. In other embodiments, the switching element 200 may be a top gate structure or other suitable form of thin film transistor as known to those skilled in the art.

The optoelectronic device 300 is disposed on the substrate 100 and coupled to the switching device 200, for example. In this embodiment, the photovoltaic element 300 comprises a semiconductor, wherein the semiconductor comprises a monocrystalline material or a polycrystalline material. For example, the semiconductor material of the optoelectronic element 300 may include germanium (Ge), indium phosphide (InP), gallium arsenide (GaAs), cadmium telluride (CdTe), aluminum gallium indium phosphide (AlGaInP), indium gallium arsenide (InGaAs), cadmium sulfide (CdS), single crystal silicon (mono-Si), polycrystalline silicon (poly-Si), or combinations thereof, for example. In some embodiments, the photovoltaic element 300 is coupled with the switching element 200. In some embodiments, the optoelectronic device 300 can be coupled to the switching device 200 through the drain D. In detail, the semiconductor of the optoelectronic element 300 can receive the light P and generate the carrier C (e.g. electrons and/or holes), and the carrier C is stored in the optoelectronic element 300 when the switching element 200 is not turned on. After the switching element 200 is turned on, the carrier C stored in the photocell 300 may be transferred to the processing circuit, for example, via a read line coupled to the switching element 200, so as to realize the function of light detection. In some embodiments, the read line may be the data line DL described later, but the present invention is not limited thereto. Since the semiconductor of the optoelectronic device 300 includes the above materials, the movement of the carriers C can be reduced, and the detection performance of the detection apparatus 10 can be improved. It should be noted that the construction of the optoelectronic device 300 will be described in detail in the following embodiments.

The scintillator 400 is disposed on the substrate 100, for example. In some embodiments, the scintillator 400 is disposed in correspondence with the photocell 300. Specifically, in the planar view of the detection device 10 (for example, the planar view n of the substrate 100), the scintillator 400 and the photocell 300 are at least partially overlapped. The scintillator 400 can, for example, receive electromagnetic waves L and generate light rays P. For example, the electromagnetic wave L may be non-visible light, and the scintillator 400 may convert the received non-visible light (e.g., X-ray) into visible light. Therefore, in some embodiments, the detection device 10 may be an X-ray detection device, but the invention is not limited thereto. The material of scintillator 400 can include Lu ₂ S ₃ :Ce ³⁺ 、LaBr ₃ :PR ³⁺ 、CsI:TI、Y ₃ Al ₅ O ₁₂ :Ce、Lu ₃ Al ₅ O ₁₂ :Ce、Bi ₄ Ge ₃ O ₁₂ 、PbWO ₄ 、Gd ₂ SiO ₅ Ce or a combination thereof. In addition, although the present embodiment shows the photoelectric element 300 located between the scintillator 400 and the substrate 100, the present invention is not limited thereto. In other embodiments, the scintillator 400 may be located between the optoelectronic element 300 and the substrate 100.

Fig. 2A is a schematic top view of a portion of a detecting device according to an embodiment of the invention, and fig. 2B is a schematic cross-sectional view of a section line A-A' of fig. 2A. It should be noted that, the embodiment of fig. 2A and fig. 2B may use the element numbers and part of the content of the embodiment of fig. 1, where the same or similar numbers are used to denote the same or similar elements, and descriptions of the same technical content are omitted.

The detection device 10a of the present embodiment includes, for example, the substrate 100, the switching element 200, the photoelectric element 300, and the scintillator 400. In some embodiments, the detecting device 10a further includes a scan line SL, a voltage line BL, and a data line DL. The materials of the scan line SL, the voltage line BL, and the data line DL may refer to the material of the gate electrode G, which will not be repeated here. The scan lines SL are disposed on the substrate 100 and coupled to the gates G of the switching elements 200, wherein the scan lines SL may be used to provide scan signals to the corresponding switching elements 200 to turn on. In some embodiments, the scan line SL extends toward the first direction d 1. The voltage line BL is disposed on the substrate 100 and coupled to the optoelectronic element 300, for example, wherein the voltage line BL may be used to apply a voltage level to the optoelectronic element 300, for example. In some embodiments, the voltage line BL extends toward the second direction d2, wherein the first direction d1 is different from the second direction d 2. In the present embodiment, the first direction d1 is orthogonal to the second direction d2, but the present invention is not limited thereto. The data line DL is disposed on the substrate 100 and coupled to a source S of the switching element 200, wherein a signal (carrier) generated by the photo element 300 can be transmitted to the data line DL through the source S, and the data line DL can transmit the signal (carrier) to a processing circuit (not shown). In some embodiments, the data line DL also extends toward the second direction d 2. In the present embodiment, the voltage line BL and the data line DL belong to the same layer, and therefore, the voltage line BL and the switching element 200 can be disposed on the same side of the optoelectronic element 300 adjacent to the substrate 100, but the invention is not limited thereto. In this embodiment, the width BW of the voltage line BL is larger than the distance GD between the source S and the drain D. For example, in any cross-sectional view of the detecting device 10a, for example, a cross-sectional view parallel to the extending direction of the scan line SL (i.e., the first direction D1), the width BW of the voltage line BL is larger than the distance GD between the source S and the drain D.

In addition, in the detection device 10a of the present embodiment, the optoelectronic element 300 may include a chip (chip), which may include a bare die or an element of which the bare die is packaged by a package. In detail, the optoelectronic device 300 of the present embodiment includes a semiconductor 300D, an electrode E1, and an electrode E2. The semiconductor 300D includes, for example, a first layer 310, an intrinsic layer 320, and a second layer 330, and the first layer 310, the intrinsic layer 320, and the second layer 330 are stacked in this order in the top view direction n of the substrate 100, for example. In some embodiments, the semiconductor 300D may be formed directly on the substrate 100 by an epitaxial process or may be formed on the substrate 100 by transferring a chip and bonding the chip, which is not limited to this. Electrode E1 and electrode E2 are coupled with, for example, second layer 330 and first layer 310, respectively. The semiconductor 300D may include a single crystal material or a polycrystalline material as described above, and will not be described herein. In the present embodiment, the first layer 310 includes an N-type gallium arsenide semiconductor, the intrinsic layer 320 includes a gallium arsenide multiple quantum well semiconductor, and the second layer 330 includes a P-type gallium arsenide semiconductor, but the invention is not limited thereto. In other embodiments, the first layer 310 comprises a P-type gallium arsenide semiconductor, the intrinsic layer 320 comprises a gallium arsenide multiple quantum well semiconductor, and the second layer 330 comprises an N-type gallium arsenide semiconductor. In some embodiments, the electrodes E1 and E2 comprise transparent conductive materials, which may be indium tin oxide, but the invention is not limited thereto. In addition, the electrode E2 is coupled with a voltage line BL, for example. The electrode E1 is coupled to the switching element 200 through the drain electrode D, for example, so that the carriers generated by the intrinsic layer 320 can be transferred to the drain electrode D through the electrode E2, and then can be transferred to the data line DL through the switching element 200 and the source electrode S. In some embodiments of the detection device 10a, the semiconductor 300D of the optoelectronic element 300 may be formed through a thin film process, and the semiconductor 300D, the electrode E1, and the electrode E2 of the optoelectronic element 300 may be formed through a thin film process.

In addition, the detecting device 10a of the present embodiment further includes an insulating layer IL1, an insulating layer IL2, an insulating layer IL3, a PAD, an insulating layer IL4, and an insulating layer IL5.

The insulating layer IL1 is provided on the gate insulating layer GI, for example. In the present embodiment, the insulating layer IL1 partially covers the semiconductor layer SE. In detail, the insulating layer IL1 has a through hole il1_op1 and a through hole il1_op2 exposing a portion of the semiconductor layer SE, wherein the source S and the drain D are disposed on the insulating layer IL1 and are coupled to the semiconductor layer SE of the switching element 200 through the through hole il1_op1 and the through hole il1_op2, but the invention is not limited thereto. The material of the insulating layer IL1 may include, for example, an inorganic material (e.g., silicon oxide, silicon nitride, silicon oxynitride, or a stacked layer of at least two of the above), an organic material (e.g., polyimide-based resin, epoxy-based resin, or acryl-based resin), or a combination of the above, but the present invention is not limited thereto.

The insulating layer IL2 is disposed on the insulating layer IL1, for example. In the present embodiment, the insulating layer IL2 partially covers the source S and the drain D. Specifically, the insulating layer IL2 has a through hole il2_op1 exposing a portion of the source electrode S and a through hole il2_op2 exposing a portion of the drain electrode D, but the invention is not limited thereto. The material of the insulating layer IL2 may refer to the material of the insulating layer IL1, and will not be repeated here. In some embodiments, the material of insulating layer IL2 may be the same as the material of insulating layer IL1, and in other embodiments, the material of insulating layer IL2 may be different from the material of insulating layer IL1.

The insulating layer IL3 is disposed on the insulating layer IL2, for example. In this embodiment, the insulating layer IL3 also has a through hole il3_op1 exposing a portion of the source electrode S and a through hole il3_op2 exposing a portion of the drain electrode D. Specifically, the through holes il3_op1 and il3_op2 of the insulating layer IL3 are disposed corresponding to the through holes il2_op1 and il2_op2 of the insulating layer IL2, respectively, so that the insulating layer IL3 can expose part of the source electrode S and the drain electrode D together with the insulating layer IL 2. The material of the insulating layer IL3 may be, for example, an organic material, for example: polyimide-based resin, epoxy-based resin, or acryl-based resin, or a combination thereof, and can, for example, provide a film layer formed thereon with superior flatness. In the present embodiment, the data line DL is disposed on the insulating layer IL3 and coupled to the source S through the through hole il2_op1 and the through hole il3_op1, and the voltage line BL is also disposed on the insulating layer IL3 due to the same layer as the data line DL.

The PAD is disposed on the insulating layer IL3, for example. In this embodiment, the PAD, the voltage line BL and the data line DL belong to the same layer. The PAD may be used, for example, to couple the electrode E1 with the switching element 200. In detail, the PAD can be coupled to the drain D through the through hole il2_op2 of the insulating layer IL2 and the through hole il3_op2 of the insulating layer IL3, and the electrode E1 is coupled to the PAD, and the drain D is coupled to the switching element 200.

The insulating layer IL4 is provided on the insulating layer IL3, for example. In the present embodiment, the insulating layer IL4 partially covers the PAD and the voltage line BL. In detail, the insulating layer IL4 has a through hole il4_op1 exposing a portion of the PAD and a through hole il4_op2 exposing a portion of the voltage line BL, wherein the electrode E1 is coupled to the PAD through the through hole il4_op1 and the electrode E2 is coupled to the voltage line BL through the through hole il4_op2, but the invention is not limited thereto. The material of the insulating layer IL4 may refer to the material of the insulating layer IL1, and will not be repeated here.

The insulating layer IL5 is provided on the insulating layer IL4, for example. In the present embodiment, the insulating layer IL5 may cover the semiconductor 300D, and may be used to protect the semiconductor 300D. The scintillator 400 is provided on the insulating layer IL5, for example. The material of the insulating layer IL5 may refer to the material of the insulating layer IL1, and will not be repeated here.

Fig. 3A is a schematic top view of a portion of a detecting device according to another embodiment of the present invention, and fig. 3B is a schematic cross-sectional view of a section line B-B' of fig. 3A. It should be noted that, the embodiments of fig. 3A and fig. 3B may respectively use the element numbers and part of the content of the embodiments of fig. 2A and fig. 2B, where the same or similar numbers are used to denote the same or similar elements, and descriptions of the same technical content are omitted.

Referring to fig. 3A and 3B, the main differences between the detecting device 10B of the present embodiment and the detecting device 10a are as follows: the detection device 10b includes a switching element 200 that is a top gate thin film transistor. Specifically, the gate electrode G is disposed on the gate insulating layer GI and above the semiconductor layer SE, for example. The semiconductor layer SE is partially covered with a gate insulating layer GI, for example. That is, the gate insulating layer GI has the through holes gi_op1 and gi_op2 exposing portions of the semiconductor layer SE, and the through holes il1_op1 and il1_op2 of the insulating layer IL1 communicate with the through holes gi_op1 and gi_op2 of the gate insulating layer GI, respectively, so that the insulating layer IL1 may expose portions of the semiconductor layer SE together with the gate insulating layer GI. The source S may be coupled with the semiconductor layer SE, for example, through the via gi_op1 and the via il1_op1, and the drain D may be coupled with the semiconductor layer SE, for example, through the via gi_op2 and the via il1_op2. In detail, the semiconductor layer SE has, for example, a channel region CH and source and drain regions SR and DR located at opposite sides of the channel region CH, wherein the channel region CH and the gate G overlap in the top view direction n of the substrate 100, and the source S and the drain D may be coupled with the source region SR and the drain region DR of the semiconductor layer SE through vias penetrating the gate insulating layer GI and the insulating layer IL1, respectively. In this embodiment, the width BW of the voltage line BL is larger than the width GW of the gate G. For example, in any cross-sectional view of the detecting device 10b, for example, a cross-sectional view parallel to the extending direction of the scan line SL (i.e., the first direction d 1), the width BW of the voltage line BL is larger than the width GW of the gate G.

Fig. 4A is a schematic top view of a portion of a detecting device according to another embodiment of the present invention, and fig. 4B is a schematic cross-sectional view of a section line C-C' in fig. 4A. It should be noted that, the embodiments of fig. 4A and fig. 4B may respectively use the element numbers and part of the content of the embodiments of fig. 2A and fig. 2B, where the same or similar numbers are used to denote the same or similar elements, and descriptions of the same technical content are omitted.

Referring to fig. 4A and 4B, the main differences between the detecting device 10c of the present embodiment and the detecting device 10a are as follows: the voltage line BL and the switching element 200 are disposed at opposite sides of the photo element 300.

In detail, the voltage line BL is disposed on the insulating layer IL5, for example, and the insulating layer IL5 has a through hole il5_op to expose a portion of the second layer 330 of the optoelectronic element 300, wherein the voltage line BL can be coupled with the second layer 330 of the optoelectronic element 300 through an electrode E2 disposed in the through hole il5_op. In addition, the first layer 310 of the optoelectronic device 300 is coupled to the electrode E1, the electrode E1 is coupled to the PAD through the through hole il4_op of the insulating layer IL4, the PAD is further coupled to the drain D, and the drain D is further coupled to the switching device 200, such that the switching device 200 is coupled to the first layer 310 of the optoelectronic device 300.

In the present embodiment, the insulating layer IL1 is not provided between the source electrode S and the drain electrode D and the semiconductor layer SE. Accordingly, the source electrode S and the drain electrode D are in direct contact with and coupled to the semiconductor layer SE, but the present invention is not limited thereto.

In this embodiment, the detecting device 10c further includes a voltage line BL. The voltage line BL is provided on the switching element 200, for example. In some embodiments, the voltage line BL at least partially overlaps the switching element 200 in a top view direction of the detection device 10c (e.g., a top view direction n of the substrate 100). Specifically, the voltage line BL may be provided on the insulating layer IL5, for example, and at least partially overlap the semiconductor layer SE in the switching element 200 in the planar direction n of the substrate 100. Since the material of the voltage line BL may include a conductor having low light transmittance, when the voltage line BL is at least partially overlapped with the semiconductor layer SE in the switching element 200 in the planar direction n of the substrate 100, it is possible to improve a case where the semiconductor layer SE is affected by external ambient light irradiation to the electrical property of the switching element 200. In this embodiment, the width BW of the voltage line BL is larger than the distance GD between the source S and the drain D. For example, in any cross-sectional view of the detecting device 10c, for example, a cross-sectional view parallel to the extending direction of the scan line SL (i.e., the first direction D1), the width BW of the voltage line BL is larger than the distance GD between the source S and the drain D.

In this embodiment, the detecting device 10c further includes an insulating layer IL6. The insulating layer IL6 is disposed on the insulating layer IL5 and covers the voltage line BL, for example, wherein the scintillator 400 is disposed on the insulating layer IL6. The material of the insulating layer IL6 may refer to the material of the insulating layer IL1, and will not be repeated here.

According to the above, the photoelectric element in the detection device according to the embodiment of the present invention includes a single crystal material or a polycrystalline material, so that the situation of capturing carriers generated in the photoelectric element can be reduced, and the detection efficiency of the detection device according to the embodiment of the present invention can be improved.

Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present invention, and not for limiting the same; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some or all of the technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit of the invention.

Claims (10)

1. A detection apparatus, characterized by comprising:

a substrate;

a switching element disposed on the substrate;

an optoelectronic element disposed on the substrate and coupled to the switching element, the optoelectronic element comprising a semiconductor comprising a monocrystalline material or a polycrystalline material; and

and a scintillator which is at least partially overlapped with the photoelectric element in a plan view of the detection device.

2. The detection apparatus according to claim 1, wherein the semiconductor of the optoelectronic element comprises gallium arsenide.

3. The device of claim 1, wherein the photocell comprises a chip.

4. The detection device of claim 1, further comprising a voltage line disposed on the substrate and coupled to the photocell.

5. The detecting device according to claim 4, wherein the voltage line is located on the same side of the photoelectric element as the switching element.

6. The detection device of claim 4, wherein the optoelectronic element comprises a first electrode coupled to the switching element and a second electrode coupled to the voltage line.

7. The detecting device according to claim 4, wherein the voltage line at least partially overlaps with the switching element in the top view direction of the detecting device.

8. The detecting device according to claim 4, wherein the voltage line and the switching element are located on opposite sides of the photoelectric element, respectively.

9. The device of claim 4, further comprising a source and a drain each coupled to the switching element, wherein the switching element is a bottom gate structure, and wherein the voltage line has a width greater than a spacing between the source and the drain in a cross-sectional view of the device.

10. The device of claim 1, further comprising a scan line and a data line, wherein the scan line and the data line are each coupled to the switching element.

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