CN116094472A - Multi-channel broadband amplification multifunctional chip - Google Patents

Multi-channel broadband amplification multifunctional chip Download PDF

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Publication number
CN116094472A
CN116094472A CN202310220871.3A CN202310220871A CN116094472A CN 116094472 A CN116094472 A CN 116094472A CN 202310220871 A CN202310220871 A CN 202310220871A CN 116094472 A CN116094472 A CN 116094472A
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capacitor
resistor
transistor
microstrip line
grounding
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CN116094472B (en
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廖学介
刘莹
王测天
童伟
邬海峰
胡柳林
滑育楠
叶珍
王为
羊洪轮
黄敏
叶倩
石君
卢娜
姚乃文
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Chengdu Ganide Technology Co ltd
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Chengdu Ganide Technology Co ltd
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/303—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters using a switching device
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/32—Modifications of amplifiers to reduce non-linear distortion
    • H03F1/3205—Modifications of amplifiers to reduce non-linear distortion in field-effect transistor amplifiers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D30/00—Reducing energy consumption in communication networks
    • Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Amplifiers (AREA)
  • Microwave Amplifiers (AREA)

Abstract

The invention discloses a multi-channel broadband amplification multifunctional chip, which belongs to the technical field of integrated circuits and comprises a first filtering amplification network, a second filtering amplification network, a power separation switch network and an amplification detection network. The invention realizes the high-frequency amplification and filtering of signals in a broadband through a first filtering and amplifying network, an amplifying unit adopts a temperature compensation current multiplexing structure, and a filtering unit adopts a five-order elliptic high-pass filtering structure; the low-frequency amplification and filtering of the signals are realized in a broadband through a second filtering and amplifying network, the amplifying unit adopts a temperature compensation common-source common-gate amplifying structure, and the filtering unit adopts a third-order elliptic low-pass filtering structure; the power dividing switch network adopts the combination of zero-degree power dividing and a switch unit in a lumped parameter form to realize the switching of the working states of three channels; the amplifying and detecting network realizes amplifying and detecting output of the third channel signal in the broadband. The invention has the advantages of high gain, low power consumption, high out-of-band suppression degree, high multi-channel integration level and the like.

Description

Multi-channel broadband amplification multifunctional chip
Technical Field
The invention belongs to the technical field of integrated circuits, and particularly relates to a multi-channel broadband amplification multifunctional chip.
Background
Modern radar systems are facing problems of increased number of T/R components and complexity of the system due to high performance requirements on the one hand and low cost on the other hand. The traditional T/R component consists of discrete devices, has the problems of large circuit area, high cost, poor consistency, complex assembly and the like, and the multifunctional chip can integrate a plurality of functional subsystems integrally, overcomes the defects of the traditional form, has good and wide application prospect, and simultaneously provides higher design requirements for the performances of the multifunctional chip in the aspects of low power consumption, low noise, high gain, high isolation, low cost, reliability and the like. The multi-channel amplifying and filtering multifunctional chip is a key component of a transceiver component and is mainly realized by a microwave monolithic integrated circuit technology. The filter, the amplifier, the power divider, the switch, the detector and the like in the T/R component are integrated in the chip through design, so that the typical multi-channel amplifying and filtering multifunctional chip is obtained. The design scheme is favorable for the miniaturization and integration development of the system, has wide application prospect, and simultaneously provides higher design requirements for the performances of the multi-channel amplifying and filtering multifunctional chip in the aspects of low power consumption, low noise, high gain, high channel isolation, high suppression degree, high integration reliability and the like.
Disclosure of Invention
The invention provides a multi-channel broadband amplifying multifunctional chip for solving the problems.
The technical scheme of the invention is as follows: the multi-channel broadband amplification multifunctional chip comprises a first filtering amplification network, a second filtering amplification network, a power separation switch switching network and an amplification detection network;
the input end of the first filtering and amplifying network is used as a first radio frequency input end of the multi-channel broadband amplifying multifunctional chip, and the output end of the first filtering and amplifying network is connected with the first input end of the power dividing switch network;
the input end of the second filtering and amplifying network is used as a second radio frequency input end of the multi-channel broadband amplifying multifunctional chip, and the output end of the second filtering and amplifying network is connected with the second input end of the power dividing switch network;
the first output end of the amplifying detection network is used as a third radio frequency output end of the multi-channel broadband amplifying multifunctional chip, the second output end of the amplifying detection network is used as a detection output end of the multi-channel broadband amplifying multifunctional chip, and the input end of the amplifying detection network is connected with the output end of the power dividing switch network;
the first output end of the power dividing switch network is used as the first radio frequency output end of the multi-channel broadband amplifying multifunctional chip, and the second output end of the power dividing switch network is used as the second radio frequency output end of the multi-channel broadband amplifying multifunctional chip.
The beneficial effects of the invention are as follows: the multi-channel broadband amplification multifunctional chip integrates two filtering amplification units, a power division switch unit and an amplification detection unit. The invention realizes the high-frequency amplification and filtering of signals in a broadband through a first filtering and amplifying network, an amplifying unit adopts a temperature compensation current multiplexing structure, and a filtering unit adopts a five-order elliptic high-pass filtering structure; the low-frequency amplification and filtering of the signals are realized in a broadband through a second filtering and amplifying network, the amplifying unit adopts a temperature compensation common-source common-gate amplifying structure, and the filtering unit adopts a third-order elliptic low-pass filtering structure; the power dividing switch network adopts the combination of zero-degree power dividing and a switch unit in a lumped parameter form to realize the switching of the working states of three channels; the amplifying and detecting network adopts a temperature compensation Darlington structure and a passive detecting structure to realize the amplifying and detecting output of the third channel signal in a broadband. The invention has the advantages of high gain, low power consumption, high out-of-band suppression degree, high multi-channel integration level and the like.
Further, the first filter amplifying network includes a resistor R1, a resistor R2, a grounding resistor R3, a grounding resistor R4, a resistor R5, a resistor R6, a grounding resistor R7, a resistor R8, a resistor R10, a capacitor C1, a capacitor C2, a capacitor C3, a capacitor C4, a capacitor C5, a grounding capacitor C6, a capacitor C7, a capacitor C8, a grounding capacitor C9, a grounding capacitor C10, a grounding capacitor C11, a capacitor C12, a grounding inductor L1, a grounding inductor L2, an inductor L3, an inductor L4, an inductor L5, a microstrip line TL1, a grounding microstrip line TL2, a microstrip line TL3, a microstrip line TL4, a transistor M1, a transistor M2, and a transistor M3;
one end of the capacitor C1 is used as an input end of the first filtering and amplifying network, and the other end of the capacitor C1 is respectively connected with one end of the capacitor C2 and one end of the capacitor C4; the other end of the capacitor C4 is connected with the grounding inductor L1; the other end of the capacitor C2 is connected with one end of the capacitor C3 and one end of the capacitor C5 respectively; the other end of the capacitor C5 is connected with the grounding inductor L2; the other end of the capacitor C3 is respectively connected with one end of the resistor R1 and one end of the microstrip line TL 1; the grid electrode of the transistor M1 is respectively connected with the other end of the resistor R1, one end of the resistor R2, the grounding resistor R3 and the drain electrode of the transistor M1, and the source electrode of the transistor M1 is connected with the grounding resistor R4; the other end of the resistor R2 is respectively connected with one end of the resistor R5, one end of the resistor R6, one end of the grounding capacitor C9 and the inductor L4 and the drain power supply VD 1; the other end of the resistor R5 is connected with a grounding capacitor C10; the grid electrode of the transistor M2 is respectively connected with the other end of the microstrip line TL1 and one end of the resistor R10, the source electrode of the transistor M is connected with the grounding microstrip line TL2, and the drain electrode of the transistor M is respectively connected with one end of the capacitor C8 and one end of the inductor L3; the grid electrode of the transistor M3 is respectively connected with the other end of the capacitor C8 and one end of the resistor R8, the source electrode of the transistor M is respectively connected with the other end of the inductor L3 and the grounding capacitor C6, and the drain electrode of the transistor M is connected with one end of the microstrip line TL 3; the other end of the resistor R10 is connected with one end of the capacitor C7; the other end of the capacitor C7 is connected with one end of the inductor L5; the other end of the inductor L5 is respectively connected with the other end of the inductor L4, the other end of the microstrip line TL3 and one end of the microstrip line TL 4; the other end of the resistor R8 is respectively connected with the other end of the resistor R6 and the grounding resistor R7; the other end of the microstrip line TL4 is connected with one end of a grounding capacitor C11 and one end of a capacitor C12 respectively; the other end of the capacitor C12 is used as the output end of the first filter amplification network.
The beneficial effects of the above-mentioned further scheme are: the first radio frequency input end adopts the first filter amplification network to realize the characteristics of high gain, low power consumption, temperature compensation and high-frequency out-of-band suppression. The amplifying unit adopts a current multiplexing structure to combine the parallel negative feedback L5/C7/R10 and the series negative feedback TL2 to expand the bandwidth; the temperature compensation bias unit is used for carrying out active bias through the active tube M1 and combining a resistor R3/R4 with a positive temperature coefficient to the ground, so that grid direct current bias is provided, the high-low temperature compensation function of radio frequency performance is realized, the sensitivity of a circuit to process fluctuation is effectively reduced, and meanwhile, the linearity of the circuit is improved; the VD1 drain power supply filtering part adopts a parallel C-to-ground circuit and a serial RC-to-circuit, and mainly realizes the suppression of low-frequency and high-frequency self-excitation unstable signals of a power supply; the filtering unit adopts a five-order LC elliptic high-pass filtering structure to realize high-frequency out-of-band rejection, good in-band flatness and input matching characteristics.
Further, the second filter amplifying network includes a grounding resistor R16, a grounding resistor R17, a resistor R18, a resistor R19, a resistor R20, a resistor R21, a resistor R22, a resistor R23, a resistor R24, a capacitor C16, a grounding capacitor C17, a grounding capacitor C18, a capacitor C19, a capacitor C29, a capacitor C30, a grounding capacitor C31, a grounding capacitor C32, a capacitor C33, a grounding capacitor C34, a capacitor C35, a grounding capacitor C37, a grounding capacitor C38, an inductance L10, a grounding inductance L13, an inductance L14, an inductance L15, an inductance L16, a microstrip line TL19, a transistor M13, a transistor M14 and a transistor M15;
one end of the inductor L10 is used as an input end of the second filtering and amplifying network and is respectively connected with one end of the capacitor C16 and the grounding capacitor C17; the other end of the inductor L10 is respectively connected with the other end of the capacitor C16, the grounding capacitor C18 and one end of the capacitor C19; the other end of the capacitor C19 is connected with one end of the capacitor C29 and the grounding inductor L13 respectively; the other end of the capacitor C29 is respectively connected with one end of the resistor R18 and one end of the microstrip line TL 19; the grid electrode of the transistor M14 is respectively connected with the other end of the microstrip line TL19 and one end of the resistor R24, the source electrode of the transistor M is grounded, and the drain electrode of the transistor M is respectively connected with the source electrode of the transistor M15 and the grounding capacitor C32; the grid electrode of the transistor M13 is respectively connected with one end of a grounding resistor R16 and a resistor R19 and the drain electrode of the transistor M13, and the source electrode of the transistor M13 is connected with a grounding resistor R17; the other end of the resistor R19 is respectively connected with one end of the resistor R21, one end of the resistor R23, the grounding capacitor C37, one end of the inductor L14 and the drain power source VD 2; the other end of the resistor R23 is connected with a grounding capacitor C38; the other end of the resistor R21 is respectively connected with one end of the resistor R20, one end of the resistor R22 and the grid electrode of the transistor M15; the other end of the resistor R20 is connected with a grounding capacitor C31; the drain electrode of the transistor M15 is respectively connected with one end of the capacitor C33, the other end of the inductor L14, one end of the inductor L15 and one end of the inductor L16; the other end of the capacitor C33 is connected with the other end of the resistor R22; the other end of the inductor L16 is connected with one end of the capacitor C30; the other end of the capacitor C30 is connected with the other end of the resistor R24; the other end of the inductor L15 is connected with one end of a grounding capacitor C34 and one end of a capacitor C35 respectively; the other end of the capacitor C35 is used as the output end of the second filter amplification network.
The beneficial effects of the above-mentioned further scheme are: the second radio frequency input end adopts a second filter amplification network to realize the high gain, low power consumption, temperature compensation and low-frequency out-of-band suppression characteristics. The amplifying unit adopts an improved cascode amplifying structure, compared with the traditional cascode structure, the bandwidth and impedance matching are improved by introducing a parallel negative feedback structure L6/C30/R24 between the input and output ends of the cascode tube M14 and the cascode tube M15, and simultaneously, the parallel negative feedback R22 and C33 of the M15 cascode tube are increased, so that the bandwidth and output matching characteristic can be further improved; the temperature compensation bias unit is used for carrying out active bias through the active tube M13 and combining a resistor R16/R17 with a positive temperature coefficient to a ground structure, so that grid direct current bias is provided, the high-low temperature compensation function of radio frequency performance is realized, the sensitivity of a circuit to process fluctuation is effectively reduced, and meanwhile, the linearity of the circuit is improved. The VD2 drain power supply filtering part adopts a parallel C-to-ground circuit and a serial RC-to-circuit, and mainly realizes the suppression of low-frequency and high-frequency self-excitation unstable signals of the power supply; the filtering unit adopts a third-order LC elliptic low-pass filtering structure to realize low-frequency out-of-band suppression, good in-band flatness and input matching characteristics.
Further, the work separation switch switching network includes a resistor R9, a ground resistor R10, a resistor R11, a ground capacitor C13, a ground capacitor C14, a ground capacitor C15, a ground capacitor C25, a ground capacitor C26, a ground capacitor C27, an inductance L6, an inductance L7, an inductance L8, an inductance L9, a microstrip line TL5, a microstrip line TL6, a microstrip line TL7, a microstrip line TL8, a microstrip line TL9, a microstrip line TL10, a microstrip line TL11, a microstrip line TL12, a microstrip line TL13, a microstrip line TL14, a microstrip line TL15, a transistor M7, a transistor M8, a transistor M9, a transistor M10, a transistor M11, and a transistor M12;
one end of the microstrip line TL5 is used as a first input end of the power dividing switch switching network, and the other end of the microstrip line TL5 is respectively connected with one end of the inductor L6, one end of the inductor L7 and the grounding capacitor C13; the other end of the inductor L6 is respectively connected with one end of the microstrip line TL6, one end of the resistor R9 and the grounding capacitor C14; the other end of the microstrip line TL6 is used as a first output end of the power division switch switching network; the other end of the inductor L7 is respectively connected with the other end of the resistor R9, the grounding capacitor C15 and one end of the microstrip line TL 7; the grid electrode of the transistor M8 is connected with the control signal V2, the source electrode of the transistor M is respectively connected with the other end of the microstrip line TL7 and one end of the microstrip line TL8, and the drain electrode of the transistor M is grounded; the gate of the transistor M7 is connected to the control signal V1, the source thereof is connected to the source of the transistor M9, the source of the transistor M11 and one end of the microstrip line TL9, and the drain thereof is connected to the other end of the microstrip line TL 8; the other end of the microstrip line TL9 is used as an output end of the power division switch switching network; the gate of the transistor M11 is connected to the control signal V5, and the drain thereof is connected to one end of the microstrip line TL 11; the gate of the transistor M12 is connected to the control signal V6, the source thereof is connected to the other end of the microstrip line TL11 and one end of the microstrip line TL12, respectively, and the drain thereof is grounded; the other end of the microstrip line TL12 is connected with a grounding resistor R10; the gate of the transistor M9 is connected to the control signal V3, and the drain thereof is connected to one end of the microstrip line TL 10; the gate of the transistor M10 is connected to the control signal V4, the source thereof is connected to the other end of the microstrip line TL10 and one end of the microstrip line TL13, respectively, and the drain thereof is grounded; the other end of the microstrip line TL13 is respectively connected with one end of an inductor L8, one end of a grounding capacitor C26 and one end of a resistor R11; the other end of the inductor L8 is respectively connected with the grounding capacitor C25, one end of the inductor L9 and one end of the microstrip line TL 14; the other end of the microstrip line TL14 serves as a second input end of the power split switch switching network; the other end of the inductor L9 is respectively connected with one end of the microstrip line TL15, the other end of the resistor R11 and the grounding capacitor C27; the other end of the microstrip line TL15 serves as a second output of the power split switching network.
The beneficial effects of the above-mentioned further scheme are: the power dividing switch network comprises two zero-degree power dividing units and a single-pole three-throw switch unit, wherein the power dividing units all adopt LC lumped parameter structures, the structure can realize zero-degree power dividing characteristics in a broadband range, and meanwhile, the area is effectively saved. The switch unit comprises two paths of switch states and one path of load state, and a series of structures are adopted to realize low insertion loss and high isolation. V1, V2, V3, V4, V5 and V6 are control signals of three groups of on-off states of the switches, and the switching state transformation is realized through the high-low level switching of 0/-5V.
Further, the amplifying detection network includes a resistor R12, a resistor R13, a resistor R14, a grounding resistor R15, a resistor R25, a grounding resistor R26, a grounding resistor R27, a capacitor C20, a grounding capacitor C21, a capacitor C22, a grounding capacitor C24, a capacitor C28, a grounding capacitor C36, an inductor L11, an inductor L12, a diode D1, a microstrip line TL16, a microstrip line TL17, a microstrip line TL18, a transistor M4, a transistor M5, and a transistor M6;
one end of the capacitor C28 is used as an input end of the amplifying detection network, and the other end of the capacitor C is connected with one end of the microstrip line TL 16; the grid electrode of the transistor M4 is respectively connected with one end of a resistor R14, the other end of a microstrip line TL16 and the drain electrode of the transistor M6, the source electrode of the transistor M4 is respectively connected with one end of an inductor L11, one end of an inductor L12, one end of a microstrip line TL17 and one end of a microstrip line TL18, and the drain electrode of the transistor M4 is respectively connected with the grounding resistor R15, the grid electrode of a transistor M5 and the grid electrode of the transistor M6; the source electrode of the transistor M5 is grounded, and the drain electrode of the transistor M is connected with the other end of the microstrip line TL 17; the source of the transistor M6 is connected to the ground resistor R27; the other end of the resistor R14 is respectively connected with one end of the resistor R13 and one end of the capacitor C20; the other end of the capacitor C20 is connected with the other end of the inductor L12; the other end of the resistor R13 is respectively connected with one end of the resistor R12, the grounding capacitor C24, the other end of the inductor L11 and the drain power source VD 3; the other end of the resistor R12 is connected with a grounding capacitor C23; the other end of the microstrip line TL18 is connected with one end of a grounding capacitor C21 and one end of a capacitor C22 respectively; the other end of the capacitor C22 is used as a first output end of the amplifying detection network and is respectively connected with the anode of the diode D1 and one end of the resistor R25; the negative electrode of the diode D1 is used as a second output terminal of the amplifying and detecting network, and is connected to the other end of the resistor R25, the grounding capacitor C36 and the grounding resistor R26, respectively.
The beneficial effects of the above-mentioned further scheme are: the amplifying and detecting network adopts a temperature compensation Darlington structure and a passive detecting structure to realize the amplifying and detecting output of the third channel signal in a broadband. The amplifying unit adopts a Darlington amplifying structure, the structure can realize high-gain and medium-power output in a broadband range, the bias part adopts a temperature compensation active bias structure, active bias is carried out by an active tube M6, and meanwhile, the resistor R27 with a positive temperature coefficient is combined with a ground structure, so that the direct current bias of a grid electrode of an amplifying tube M5 is provided, the high-low temperature compensation function of radio frequency performance is realized, the sensitivity of a circuit to process fluctuation is effectively reduced, and meanwhile, the linearity of the circuit is improved; the detection unit adopts a passive detection structure, and is connected in parallel to the ground unit through the diode D1 and the diode RC to directly detect and output the third radio frequency output signal. The VD3 drain power supply filtering part adopts a parallel connection C to ground and a serial connection RC to a circuit, and mainly realizes the suppression of low-frequency and high-frequency self-excitation unstable signals of the power supply.
Drawings
Fig. 1 is a schematic block diagram of a multi-channel broadband amplifying multifunctional chip according to an embodiment of the present invention.
Fig. 2 is a circuit diagram of a multi-channel broadband amplifying multi-functional chip according to an embodiment of the present invention.
Detailed Description
Embodiments of the present invention are further described below with reference to the accompanying drawings.
As shown in FIG. 1, the invention provides a multi-channel broadband amplification multifunctional chip, which comprises a first filtering amplification network, a second filtering amplification network, a power separation switch network and an amplification detection network;
the input end of the first filtering and amplifying network is used as a first radio frequency input end of the multi-channel broadband amplifying multifunctional chip, and the output end of the first filtering and amplifying network is connected with the first input end of the power dividing switch network;
the input end of the second filtering and amplifying network is used as a second radio frequency input end of the multi-channel broadband amplifying multifunctional chip, and the output end of the second filtering and amplifying network is connected with the second input end of the power dividing switch network;
the first output end of the amplifying detection network is used as a third radio frequency output end of the multi-channel broadband amplifying multifunctional chip, the second output end of the amplifying detection network is used as a detection output end of the multi-channel broadband amplifying multifunctional chip, and the input end of the amplifying detection network is connected with the output end of the power dividing switch network;
the first output end of the power dividing switch network is used as the first radio frequency output end of the multi-channel broadband amplifying multifunctional chip, and the second output end of the power dividing switch network is used as the second radio frequency output end of the multi-channel broadband amplifying multifunctional chip.
In the embodiment of the present invention, as shown in fig. 2, the first filtering and amplifying network includes a resistor R1, a resistor R2, a grounding resistor R3, a grounding resistor R4, a resistor R5, a resistor R6, a grounding resistor R7, a resistor R8, a resistor R10, a capacitor C1, a capacitor C2, a capacitor C3, a capacitor C4, a capacitor C5, a grounding capacitor C6, a capacitor C7, a capacitor C8, a grounding capacitor C9, a grounding capacitor C10, a grounding capacitor C11, a capacitor C12, a grounding inductance L1, a grounding inductance L2, an inductance L3, an inductance L4, an inductance L5, a microstrip line TL1, a grounding microstrip line TL2, a microstrip line TL3, a microstrip line TL4, a transistor M1, a transistor M2 and a transistor M3;
one end of the capacitor C1 is used as an input end of the first filtering and amplifying network, and the other end of the capacitor C1 is respectively connected with one end of the capacitor C2 and one end of the capacitor C4; the other end of the capacitor C4 is connected with the grounding inductor L1; the other end of the capacitor C2 is connected with one end of the capacitor C3 and one end of the capacitor C5 respectively; the other end of the capacitor C5 is connected with the grounding inductor L2; the other end of the capacitor C3 is respectively connected with one end of the resistor R1 and one end of the microstrip line TL 1; the grid electrode of the transistor M1 is respectively connected with the other end of the resistor R1, one end of the resistor R2, the grounding resistor R3 and the drain electrode of the transistor M1, and the source electrode of the transistor M1 is connected with the grounding resistor R4; the other end of the resistor R2 is respectively connected with one end of the resistor R5, one end of the resistor R6, one end of the grounding capacitor C9 and the inductor L4 and the drain power supply VD 1; the other end of the resistor R5 is connected with a grounding capacitor C10; the grid electrode of the transistor M2 is respectively connected with the other end of the microstrip line TL1 and one end of the resistor R10, the source electrode of the transistor M is connected with the grounding microstrip line TL2, and the drain electrode of the transistor M is respectively connected with one end of the capacitor C8 and one end of the inductor L3; the grid electrode of the transistor M3 is respectively connected with the other end of the capacitor C8 and one end of the resistor R8, the source electrode of the transistor M is respectively connected with the other end of the inductor L3 and the grounding capacitor C6, and the drain electrode of the transistor M is connected with one end of the microstrip line TL 3; the other end of the resistor R10 is connected with one end of the capacitor C7; the other end of the capacitor C7 is connected with one end of the inductor L5; the other end of the inductor L5 is respectively connected with the other end of the inductor L4, the other end of the microstrip line TL3 and one end of the microstrip line TL 4; the other end of the resistor R8 is respectively connected with the other end of the resistor R6 and the grounding resistor R7; the other end of the microstrip line TL4 is connected with one end of a grounding capacitor C11 and one end of a capacitor C12 respectively; the other end of the capacitor C12 is used as the output end of the first filter amplification network.
In the embodiment of the present invention, as shown in fig. 2, the second filtering and amplifying network includes a grounding resistor R16, a grounding resistor R17, a resistor R18, a resistor R19, a resistor R20, a resistor R21, a resistor R22, a resistor R23, a resistor R24, a capacitor C16, a grounding capacitor C17, a grounding capacitor C18, a capacitor C19, a capacitor C29, a capacitor C30, a grounding capacitor C31, a grounding capacitor C32, a capacitor C33, a grounding capacitor C34, a capacitor C35, a grounding capacitor C37, a grounding capacitor C38, an inductor L10, a grounding inductor L13, an inductor L14, an inductor L15, an inductor L16, a microstrip line TL19, a transistor M13, a transistor M14 and a transistor M15;
one end of the inductor L10 is used as an input end of the second filtering and amplifying network and is respectively connected with one end of the capacitor C16 and the grounding capacitor C17; the other end of the inductor L10 is respectively connected with the other end of the capacitor C16, the grounding capacitor C18 and one end of the capacitor C19; the other end of the capacitor C19 is connected with one end of the capacitor C29 and the grounding inductor L13 respectively; the other end of the capacitor C29 is respectively connected with one end of the resistor R18 and one end of the microstrip line TL 19; the grid electrode of the transistor M14 is respectively connected with the other end of the microstrip line TL19 and one end of the resistor R24, the source electrode of the transistor M is grounded, and the drain electrode of the transistor M is respectively connected with the source electrode of the transistor M15 and the grounding capacitor C32; the grid electrode of the transistor M13 is respectively connected with one end of a grounding resistor R16 and a resistor R19 and the drain electrode of the transistor M13, and the source electrode of the transistor M13 is connected with a grounding resistor R17; the other end of the resistor R19 is respectively connected with one end of the resistor R21, one end of the resistor R23, the grounding capacitor C37, one end of the inductor L14 and the drain power source VD 2; the other end of the resistor R23 is connected with a grounding capacitor C38; the other end of the resistor R21 is respectively connected with one end of the resistor R20, one end of the resistor R22 and the grid electrode of the transistor M15; the other end of the resistor R20 is connected with a grounding capacitor C31; the drain electrode of the transistor M15 is respectively connected with one end of the capacitor C33, the other end of the inductor L14, one end of the inductor L15 and one end of the inductor L16; the other end of the capacitor C33 is connected with the other end of the resistor R22; the other end of the inductor L16 is connected with one end of the capacitor C30; the other end of the capacitor C30 is connected with the other end of the resistor R24; the other end of the inductor L15 is connected with one end of a grounding capacitor C34 and one end of a capacitor C35 respectively; the other end of the capacitor C35 is used as the output end of the second filter amplification network.
In the embodiment of the present invention, as shown in fig. 2, the work separation switch switching network includes a resistor R9, a ground resistor R10, a resistor R11, a ground capacitor C13, a ground capacitor C14, a ground capacitor C15, a ground capacitor C25, a ground capacitor C26, a ground capacitor C27, an inductance L6, an inductance L7, an inductance L8, an inductance L9, a microstrip line TL5, a microstrip line TL6, a microstrip line TL7, a microstrip line TL8, a microstrip line TL9, a microstrip line TL10, a microstrip line TL11, a microstrip line TL12, a microstrip line TL13, a microstrip line TL14, a microstrip line TL15, a transistor M7, a transistor M8, a transistor M9, a transistor M10, a transistor M11, and a transistor M12;
one end of the microstrip line TL5 is used as a first input end of the power dividing switch switching network, and the other end of the microstrip line TL5 is respectively connected with one end of the inductor L6, one end of the inductor L7 and the grounding capacitor C13; the other end of the inductor L6 is respectively connected with one end of the microstrip line TL6, one end of the resistor R9 and the grounding capacitor C14; the other end of the microstrip line TL6 is used as a first output end of the power division switch switching network; the other end of the inductor L7 is respectively connected with the other end of the resistor R9, the grounding capacitor C15 and one end of the microstrip line TL 7; the grid electrode of the transistor M8 is connected with the control signal V2, the source electrode of the transistor M is respectively connected with the other end of the microstrip line TL7 and one end of the microstrip line TL8, and the drain electrode of the transistor M is grounded; the gate of the transistor M7 is connected to the control signal V1, the source thereof is connected to the source of the transistor M9, the source of the transistor M11 and one end of the microstrip line TL9, and the drain thereof is connected to the other end of the microstrip line TL 8; the other end of the microstrip line TL9 is used as an output end of the power division switch switching network; the gate of the transistor M11 is connected to the control signal V5, and the drain thereof is connected to one end of the microstrip line TL 11; the gate of the transistor M12 is connected to the control signal V6, the source thereof is connected to the other end of the microstrip line TL11 and one end of the microstrip line TL12, respectively, and the drain thereof is grounded; the other end of the microstrip line TL12 is connected with a grounding resistor R10; the gate of the transistor M9 is connected to the control signal V3, and the drain thereof is connected to one end of the microstrip line TL 10; the gate of the transistor M10 is connected to the control signal V4, the source thereof is connected to the other end of the microstrip line TL10 and one end of the microstrip line TL13, respectively, and the drain thereof is grounded; the other end of the microstrip line TL13 is respectively connected with one end of an inductor L8, one end of a grounding capacitor C26 and one end of a resistor R11; the other end of the inductor L8 is respectively connected with the grounding capacitor C25, one end of the inductor L9 and one end of the microstrip line TL 14; the other end of the microstrip line TL14 serves as a second input end of the power split switch switching network; the other end of the inductor L9 is respectively connected with one end of the microstrip line TL15, the other end of the resistor R11 and the grounding capacitor C27; the other end of the microstrip line TL15 serves as a second output of the power split switching network.
In the embodiment of the present invention, as shown in fig. 2, the amplifying and detecting network includes a resistor R12, a resistor R13, a resistor R14, a grounding resistor R15, a resistor R25, a grounding resistor R26, a grounding resistor R27, a capacitor C20, a grounding capacitor C21, a capacitor C22, a grounding capacitor C24, a capacitor C28, a grounding capacitor C36, an inductor L11, an inductor L12, a diode D1, a microstrip line TL16, a microstrip line TL17, a microstrip line TL18, a transistor M4, a transistor M5, and a transistor M6;
one end of the capacitor C28 is used as an input end of the amplifying detection network, and the other end of the capacitor C is connected with one end of the microstrip line TL 16; the grid electrode of the transistor M4 is respectively connected with one end of a resistor R14, the other end of a microstrip line TL16 and the drain electrode of the transistor M6, the source electrode of the transistor M4 is respectively connected with one end of an inductor L11, one end of an inductor L12, one end of a microstrip line TL17 and one end of a microstrip line TL18, and the drain electrode of the transistor M4 is respectively connected with the grounding resistor R15, the grid electrode of a transistor M5 and the grid electrode of the transistor M6; the source electrode of the transistor M5 is grounded, and the drain electrode of the transistor M is connected with the other end of the microstrip line TL 17; the source of the transistor M6 is connected to the ground resistor R27; the other end of the resistor R14 is respectively connected with one end of the resistor R13 and one end of the capacitor C20; the other end of the capacitor C20 is connected with the other end of the inductor L12; the other end of the resistor R13 is respectively connected with one end of the resistor R12, the grounding capacitor C24, the other end of the inductor L11 and the drain power source VD 3; the other end of the resistor R12 is connected with a grounding capacitor C23; the other end of the microstrip line TL18 is connected with one end of a grounding capacitor C21 and one end of a capacitor C22 respectively; the other end of the capacitor C22 is used as a first output end of the amplifying detection network and is respectively connected with the anode of the diode D1 and one end of the resistor R25; the negative electrode of the diode D1 is used as a second output terminal of the amplifying and detecting network, and is connected to the other end of the resistor R25, the grounding capacitor C36 and the grounding resistor R26, respectively.
The specific working principle and process of the present invention are described below with reference to fig. 2:
the radio frequency input signal enters a first filtering and amplifying network through a first radio frequency input end to carry out high-frequency filtering matching and amplifying of the signal, then the radio frequency signal is divided into two paths of signals with equal amplitude and same phase by a power dividing unit through a power dividing switch network, one path of signal is output through a port of a first radio frequency output end, and the other path of signal enters a switch unit; the radio frequency input signal enters a second filtering and amplifying network through a second radio frequency input end to carry out low-frequency filtering matching and amplifying of the signal, then the radio frequency signal is divided into two paths of signals with equal amplitude and same phase by a power dividing unit through a power dividing switch network, one path of signal is output through a port of a second radio frequency output end, and the other path of signal enters a switch unit; the switch switching unit realizes the switching of the on and off states through a 0/-5V control signal to select the radio frequency signals of the low-frequency amplification path and the high-frequency amplification path to enter the amplification detection network, and the radio frequency signals reach the third radio frequency output end through the amplification unit and reach the detection output end through the passive detection unit. The invention has the advantages of high gain, low power consumption, high out-of-band suppression degree, high multi-channel integration degree and the like, and can realize the functions of filtering, amplifying, power dividing, multi-channel switching and detecting of radio frequency signals.
Those of ordinary skill in the art will recognize that the embodiments described herein are for the purpose of aiding the reader in understanding the principles of the present invention and should be understood that the scope of the invention is not limited to such specific statements and embodiments. Those of ordinary skill in the art can make various other specific modifications and combinations from the teachings of the present disclosure without departing from the spirit thereof, and such modifications and combinations remain within the scope of the present disclosure.

Claims (5)

1. The multi-channel broadband amplification multifunctional chip is characterized by comprising a first filtering and amplifying network, a second filtering and amplifying network, a power dividing switch network and an amplifying and detecting network;
the input end of the first filtering and amplifying network is used as a first radio frequency input end of the multi-channel broadband amplifying multifunctional chip, and the output end of the first filtering and amplifying network is connected with the first input end of the power dividing switch network;
the input end of the second filtering and amplifying network is used as a second radio frequency input end of the multi-channel broadband amplifying multifunctional chip, and the output end of the second filtering and amplifying network is connected with the second input end of the power dividing switch network;
the first output end of the amplifying detection network is used as a third radio frequency output end of the multi-channel broadband amplifying multifunctional chip, the second output end of the amplifying detection network is used as a detection output end of the multi-channel broadband amplifying multifunctional chip, and the input end of the amplifying detection network is connected with the output end of the power dividing switch network;
the first output end of the power dividing switch network is used as the first radio frequency output end of the multi-channel broadband amplifying multifunctional chip, and the second output end of the power dividing switch network is used as the second radio frequency output end of the multi-channel broadband amplifying multifunctional chip.
2. The multi-channel broadband amplification multifunctional chip of claim 1, wherein the first filter amplification network comprises a resistor R1, a resistor R2, a ground resistor R3, a ground resistor R4, a resistor R5, a resistor R6, a ground resistor R7, a resistor R8, a resistor R10, a capacitor C1, a capacitor C2, a capacitor C3, a capacitor C4, a capacitor C5, a ground capacitor C6, a capacitor C7, a capacitor C8, a ground capacitor C9, a ground capacitor C10, a ground capacitor C11, a capacitor C12, a ground inductor L1, a ground inductor L2, an inductor L3, an inductor L4, an inductor L5, a microstrip line TL1, a ground microstrip line TL2, a microstrip line TL3, a microstrip line TL4, a transistor M1, a transistor M2, and a transistor M3;
one end of the capacitor C1 is used as an input end of the first filtering and amplifying network, and the other end of the capacitor C1 is connected with one end of the capacitor C2 and one end of the capacitor C4 respectively; the other end of the capacitor C4 is connected with the grounding inductor L1; the other end of the capacitor C2 is connected with one end of the capacitor C3 and one end of the capacitor C5 respectively; the other end of the capacitor C5 is connected with the grounding inductor L2; the other end of the capacitor C3 is respectively connected with one end of the resistor R1 and one end of the microstrip line TL 1; the grid electrode of the transistor M1 is respectively connected with the other end of the resistor R1, one end of the resistor R2, the grounding resistor R3 and the drain electrode of the transistor M1, and the source electrode of the transistor M1 is connected with the grounding resistor R4; the other end of the resistor R2 is respectively connected with one end of the resistor R5, one end of the resistor R6, one end of the grounding capacitor C9 and the inductor L4 and the drain power supply VD 1; the other end of the resistor R5 is connected with a grounding capacitor C10; the grid electrode of the transistor M2 is respectively connected with the other end of the microstrip line TL1 and one end of the resistor R10, the source electrode of the transistor M is connected with the grounding microstrip line TL2, and the drain electrode of the transistor M is respectively connected with one end of the capacitor C8 and one end of the inductor L3; the grid electrode of the transistor M3 is respectively connected with the other end of the capacitor C8 and one end of the resistor R8, the source electrode of the transistor M is respectively connected with the other end of the inductor L3 and the grounding capacitor C6, and the drain electrode of the transistor M is connected with one end of the microstrip line TL 3; the other end of the resistor R10 is connected with one end of the capacitor C7; the other end of the capacitor C7 is connected with one end of the inductor L5; the other end of the inductor L5 is respectively connected with the other end of the inductor L4, the other end of the microstrip line TL3 and one end of the microstrip line TL 4; the other end of the resistor R8 is connected with the other end of the resistor R6 and the grounding resistor R7 respectively; the other end of the microstrip line TL4 is connected with one end of a grounding capacitor C11 and one end of a capacitor C12 respectively; the other end of the capacitor C12 is used as an output end of the first filter amplification network.
3. The multi-channel broadband amplification multifunctional chip of claim 1, wherein the second filter amplification network comprises a ground resistor R16, a ground resistor R17, a resistor R18, a resistor R19, a resistor R20, a resistor R21, a resistor R22, a resistor R23, a resistor R24, a capacitor C16, a ground capacitor C17, a ground capacitor C18, a capacitor C19, a capacitor C29, a capacitor C30, a ground capacitor C31, a ground capacitor C32, a capacitor C33, a ground capacitor C34, a capacitor C35, a ground capacitor C37, a ground capacitor C38, an inductor L10, a ground inductor L13, an inductor L14, an inductor L15, an inductor L16, a microstrip line TL19, a transistor M13, a transistor M14, and a transistor M15;
one end of the inductor L10 is used as an input end of the second filtering and amplifying network and is respectively connected with one end of the capacitor C16 and the grounding capacitor C17; the other end of the inductor L10 is respectively connected with the other end of the capacitor C16, the grounding capacitor C18 and one end of the capacitor C19; the other end of the capacitor C19 is connected with one end of the capacitor C29 and the grounding inductor L13 respectively; the other end of the capacitor C29 is respectively connected with one end of the resistor R18 and one end of the microstrip line TL 19; the grid electrode of the transistor M14 is respectively connected with the other end of the microstrip line TL19 and one end of the resistor R24, the source electrode of the transistor M is grounded, and the drain electrode of the transistor M is respectively connected with the source electrode of the transistor M15 and the grounding capacitor C32; the grid electrode of the transistor M13 is respectively connected with one ends of a grounding resistor R16 and a resistor R19 and the drain electrode of the transistor M13, and the source electrode of the transistor M13 is connected with a grounding resistor R17; the other end of the resistor R19 is respectively connected with one end of the resistor R21, one end of the resistor R23, the grounding capacitor C37, one end of the inductor L14 and the drain power supply VD 2; the other end of the resistor R23 is connected with a grounding capacitor C38; the other end of the resistor R21 is respectively connected with one end of the resistor R20, one end of the resistor R22 and the grid electrode of the transistor M15; the other end of the resistor R20 is connected with a grounding capacitor C31; the drain electrode of the transistor M15 is respectively connected with one end of the capacitor C33, the other end of the inductor L14, one end of the inductor L15 and one end of the inductor L16; the other end of the capacitor C33 is connected with the other end of the resistor R22; the other end of the inductor L16 is connected with one end of the capacitor C30; the other end of the capacitor C30 is connected with the other end of the resistor R24; the other end of the inductor L15 is connected with one end of a grounded capacitor C34 and one end of a capacitor C35 respectively; the other end of the capacitor C35 is used as an output end of the second filter amplification network.
4. The multi-channel broadband amplification multifunctional chip of claim 1, wherein the work separation switch switching network comprises a resistor R9, a ground resistor R10, a resistor R11, a ground capacitor C13, a ground capacitor C14, a ground capacitor C15, a ground capacitor C25, a ground capacitor C26, a ground capacitor C27, an inductance L6, an inductance L7, an inductance L8, an inductance L9, a microstrip line TL5, a microstrip line TL6, a microstrip line TL7, a microstrip line TL8, a microstrip line TL9, a microstrip line TL10, a microstrip line TL11, a microstrip line TL12, a microstrip line TL13, a microstrip line TL14, a microstrip line TL15, a transistor M7, a transistor M8, a transistor M9, a transistor M10, a transistor M11, and a transistor M12;
one end of the microstrip line TL5 is used as a first input end of the power dividing switch switching network, and the other end of the microstrip line TL5 is respectively connected with one end of the inductor L6, one end of the inductor L7 and the grounding capacitor C13; the other end of the inductor L6 is respectively connected with one end of the microstrip line TL6, one end of the resistor R9 and the grounding capacitor C14; the other end of the microstrip line TL6 is used as a first output end of a power division switch switching network; the other end of the inductor L7 is respectively connected with the other end of the resistor R9, the grounding capacitor C15 and one end of the microstrip line TL 7; the grid electrode of the transistor M8 is connected with the control signal V2, the source electrode of the transistor M is respectively connected with the other end of the microstrip line TL7 and one end of the microstrip line TL8, and the drain electrode of the transistor M is grounded; the gate of the transistor M7 is connected to the control signal V1, the source thereof is connected to the source of the transistor M9, the source of the transistor M11 and one end of the microstrip line TL9, and the drain thereof is connected to the other end of the microstrip line TL 8; the other end of the microstrip line TL9 is used as an output end of a power division switch switching network; the grid electrode of the transistor M11 is connected with the control signal V5, and the drain electrode of the transistor M is connected with one end of the microstrip line TL 11; the gate of the transistor M12 is connected to the control signal V6, the source thereof is connected to the other end of the microstrip line TL11 and one end of the microstrip line TL12, and the drain thereof is grounded; the other end of the microstrip line TL12 is connected with a grounding resistor R10; the grid electrode of the transistor M9 is connected with the control signal V3, and the drain electrode of the transistor M is connected with one end of the microstrip line TL 10; the gate of the transistor M10 is connected to the control signal V4, the source thereof is connected to the other end of the microstrip line TL10 and one end of the microstrip line TL13, and the drain thereof is grounded; the other end of the microstrip line TL13 is connected with one end of an inductor L8, a grounding capacitor C26 and one end of a resistor R11 respectively; the other end of the inductor L8 is respectively connected with the grounding capacitor C25, one end of the inductor L9 and one end of the microstrip line TL 14; the other end of the microstrip line TL14 is used as a second input end of the power division switch switching network; the other end of the inductor L9 is respectively connected with one end of the microstrip line TL15, the other end of the resistor R11 and the grounding capacitor C27; the other end of the microstrip line TL15 serves as a second output of the power split switching network.
5. The multi-channel broadband amplification multifunctional chip of claim 1, wherein the amplification detection network comprises a resistor R12, a resistor R13, a resistor R14, a grounding resistor R15, a resistor R25, a grounding resistor R26, a grounding resistor R27, a capacitor C20, a grounding capacitor C21, a capacitor C22, a grounding capacitor C24, a capacitor C28, a grounding capacitor C36, an inductance L11, an inductance L12, a diode D1, a microstrip line TL16, a microstrip line TL17, a microstrip line TL18, a transistor M4, a transistor M5, and a transistor M6;
one end of the capacitor C28 is used as an input end of the amplifying detection network, and the other end of the capacitor C is connected with one end of the microstrip line TL 16; the grid electrode of the transistor M4 is respectively connected with one end of the resistor R14, the other end of the microstrip line TL16 and the drain electrode of the transistor M6, the source electrode of the transistor M4 is respectively connected with one end of the inductor L11, one end of the inductor L12, one end of the microstrip line TL17 and one end of the microstrip line TL18, and the drain electrode of the transistor M4 is respectively connected with the grounding resistor R15, the grid electrode of the transistor M5 and the grid electrode of the transistor M6; the source electrode of the transistor M5 is grounded, and the drain electrode of the transistor M5 is connected with the other end of the microstrip line TL 17; the source electrode of the transistor M6 is connected with a grounding resistor R27; the other end of the resistor R14 is respectively connected with one end of the resistor R13 and one end of the capacitor C20; the other end of the capacitor C20 is connected with the other end of the inductor L12; the other end of the resistor R13 is respectively connected with one end of the resistor R12, the grounding capacitor C24, the other end of the inductor L11 and the drain power source VD 3; the other end of the resistor R12 is connected with a grounding capacitor C23; the other end of the microstrip line TL18 is connected with one end of a grounding capacitor C21 and one end of a capacitor C22 respectively; the other end of the capacitor C22 is used as a first output end of the amplifying detection network and is respectively connected with the anode of the diode D1 and one end of the resistor R25; the negative electrode of the diode D1 is used as a second output end of the amplifying and detecting network, and is respectively connected with the other end of the resistor R25, the grounding capacitor C36 and the grounding resistor R26.
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