CN116093107A - 半导体装置 - Google Patents

半导体装置 Download PDF

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Publication number
CN116093107A
CN116093107A CN202211241779.7A CN202211241779A CN116093107A CN 116093107 A CN116093107 A CN 116093107A CN 202211241779 A CN202211241779 A CN 202211241779A CN 116093107 A CN116093107 A CN 116093107A
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China
Prior art keywords
pattern
insulating layer
seal
source
region
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CN202211241779.7A
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English (en)
Chinese (zh)
Inventor
许洋
赵南奎
金锡勳
金容丞
朴判貴
申东石
李相吉
李始炯
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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Publication of CN116093107A publication Critical patent/CN116093107A/zh
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    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
    • H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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    • H01L29/7851—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET with the body tied to the substrate
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
CN202211241779.7A 2021-11-05 2022-10-11 半导体装置 Pending CN116093107A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2021-0151001 2021-11-05
KR1020210151001A KR20230065445A (ko) 2021-11-05 2021-11-05 반도체 장치

Publications (1)

Publication Number Publication Date
CN116093107A true CN116093107A (zh) 2023-05-09

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ID=83115604

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202211241779.7A Pending CN116093107A (zh) 2021-11-05 2022-10-11 半导体装置

Country Status (5)

Country Link
US (1) US20230145260A1 (fr)
EP (1) EP4177956A3 (fr)
KR (1) KR20230065445A (fr)
CN (1) CN116093107A (fr)
TW (1) TW202320227A (fr)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102523125B1 (ko) * 2015-11-27 2023-04-20 삼성전자주식회사 반도체 소자
KR102526580B1 (ko) * 2016-01-11 2023-04-27 삼성전자주식회사 반도체 장치 및 그 제조 방법

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EP4177956A3 (fr) 2023-07-19
KR20230065445A (ko) 2023-05-12
TW202320227A (zh) 2023-05-16
EP4177956A2 (fr) 2023-05-10
US20230145260A1 (en) 2023-05-11

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