CN116087571A - Miniature probe station for testing high-purity germanium monocrystal Hall and testing method - Google Patents
Miniature probe station for testing high-purity germanium monocrystal Hall and testing method Download PDFInfo
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- 239000000523 sample Substances 0.000 title claims abstract description 257
- 238000012360 testing method Methods 0.000 title claims abstract description 111
- 229910052732 germanium Inorganic materials 0.000 title claims abstract description 55
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 title claims abstract description 55
- 238000001514 detection method Methods 0.000 claims abstract description 43
- 239000013078 crystal Substances 0.000 claims abstract description 36
- 238000003466 welding Methods 0.000 claims abstract description 20
- 239000012535 impurity Substances 0.000 claims abstract description 15
- 230000000712 assembly Effects 0.000 claims abstract description 9
- 238000000429 assembly Methods 0.000 claims abstract description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 24
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 14
- 238000005260 corrosion Methods 0.000 claims description 12
- 230000007797 corrosion Effects 0.000 claims description 12
- 239000008367 deionised water Substances 0.000 claims description 12
- 229910021641 deionized water Inorganic materials 0.000 claims description 12
- 229910052757 nitrogen Inorganic materials 0.000 claims description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 12
- 238000000137 annealing Methods 0.000 claims description 11
- 230000008569 process Effects 0.000 claims description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 8
- 229910001128 Sn alloy Inorganic materials 0.000 claims description 8
- 238000004140 cleaning Methods 0.000 claims description 8
- 238000001035 drying Methods 0.000 claims description 8
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 claims description 8
- 238000005498 polishing Methods 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 6
- 238000005520 cutting process Methods 0.000 claims description 5
- 229910052786 argon Inorganic materials 0.000 claims description 4
- 230000000149 penetrating effect Effects 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 description 39
- 230000009286 beneficial effect Effects 0.000 description 5
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- 238000005259 measurement Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000007789 sealing Methods 0.000 description 5
- 238000010998 test method Methods 0.000 description 5
- 238000005406 washing Methods 0.000 description 5
- 238000004364 calculation method Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000005855 radiation Effects 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 230000005355 Hall effect Effects 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000005658 nuclear physics Effects 0.000 description 1
- 230000005433 particle physics related processes and functions Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
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- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/04—Housings; Supporting members; Arrangements of terminals
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/72—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating magnetic variables
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/073—Multiple probes
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Abstract
The invention provides a miniature probe station for testing a high-purity germanium single crystal Hall and a testing method, which belong to the technical field of Hall tests, wherein the miniature probe station for testing the high-purity germanium single crystal Hall comprises a detection station and four probe assemblies; the upper end surface of the detection table is provided with a rectangular sample placing area; the detection table is internally provided with a circuit board which is electrically connected with the Hall tester; the four probe assemblies are uniformly distributed around the sample wafer placing area, and each probe assembly comprises a fixing sheet, a limiting rod and a probe; the fixed sheet is positioned at the upper end of the detection table and is rotationally connected with the limiting rod; the probe is connected to the other end of the fixing piece and can be longitudinally adjusted. The miniature probe station for testing the high-purity germanium single crystal Hall effectively avoids ohmic contact failure caused by cold joint, broken joint and the like generated by lead welding, improves the stability of connection and the accuracy of Hall test, and meets the test requirement of the high-purity germanium single crystal impurity concentration for a detector.
Description
Technical Field
The invention belongs to the technical field of Hall tests, and particularly relates to a miniature probe station for testing a high-purity germanium monocrystal Hall and a testing method.
Background
High purity germanium single crystals are an irreplaceable material in nuclear radiation detectors. The germanium material has the characteristics of small forbidden bandwidth, relatively high atomic number, capability of being drawn into large-size single crystals and the like, so that the high-purity germanium detector has the advantages of excellent energy resolution, relatively high detection efficiency, wide energy measurement range, extremely low internal radioactivity level and the like. The high-purity germanium detector is mainly applied to the three fields of nuclear detection, scientific research and environmental protection and sanitation, not only becomes the first choice of nuclear physics, particle physics and celestial body physics experimental research, but also becomes an indispensable instrument and equipment in the fields of material science, nuclear resource exploration, radiation environment monitoring, nuclear safety, microelement analysis, security inspection, national defense and the like, and plays an increasingly important role in the aspects of scientific research, national economic development and the like.
The net impurity concentration of the high-purity germanium crystal for the nuclear radiation detector is required to be less than or equal to 2 multiplied by 10 10 /cm 3 And the net impurity concentration should have good axial uniformity. Therefore, in the measurement of the net impurity concentration of a high-purity germanium single crystal by using a low-temperature hall effect, a test sample piece with a specific shape needs to be prepared, an ohmic electrode is manufactured, good ohmic contact is formed, and the measurement is performed by using a hall tester.
In practical measurement, the sample wafer is usually a square sheet with a certain thickness, solder is performed on four vertexes to form four contact points, and then the contact points are welded to a test circuit board for testing. The method is easy to cause poor ohmic contact due to poor contact of the welding contact points, and seriously affects the test result.
Disclosure of Invention
The invention aims to provide a miniature probe station for testing high-purity germanium single crystal Hall and a testing method thereof, which aim to improve ohmic contact between a circuit board and a sample wafer and meet the testing requirement of the high-purity germanium single crystal impurity concentration for a detector.
In order to achieve the above purpose, the invention adopts the following technical scheme: the utility model provides a high-purity germanium single crystal hall is miniature probe platform for test, include:
the detecting platform is provided with a rectangular sample placing area on the upper end surface; the detection table is internally provided with a circuit board, and the circuit board is electrically connected with the Hall tester;
the four probe assemblies are uniformly distributed around the sample wafer placing area, each probe assembly comprises a fixing sheet, a limiting rod and a probe, and each limiting rod is arranged on the corresponding detection table and connected with the corresponding circuit board; the fixing piece is positioned at the upper end of the detection table and is rotationally connected with the limiting rod; the probe is connected to the other end of the fixing piece, and the probe can be longitudinally adjusted.
As another embodiment of the application, the fixing piece comprises a fixing section, an inclined section and an extending section, wherein the fixing section is horizontally attached to the upper end of the detection table and is connected with the limiting rod; the inclined section is connected with the fixed section and the extension section, the extension section is horizontally arranged, and the lower end face of the extension section is higher than the upper end face of the fixed section; the probe is connected to the extension section in a lifting manner.
As another embodiment of the application, the extension section is provided with a longitudinal threaded hole, and the outer side wall of the probe is provided with external threads matched with the threaded hole.
As another embodiment of the application, the lower end of the extension section is connected with a limit sleeve, the limit sleeve comprises a side arm connected with the extension section and a bottom plate arranged at the lower end of the side arm, and a through hole is formed in the bottom plate; the probe penetrates through the extension section and the penetrating hole in sequence, a clamping plate is connected to the middle of the probe, the clamping plate is connected with the side arm in a sliding mode, a first spring is arranged between the clamping plate and the extension section, and the clamping plate abuts against the bottom plate by means of the first spring.
As another embodiment of the application, the probe comprises a connecting sleeve and a needle body, wherein the connecting sleeve is connected with the fixing piece, and the needle body is inserted into the lower end of the connecting sleeve.
As another embodiment of the application, the fixing section is provided with a strip hole, and the limiting rod penetrates through the strip hole and abuts against the upper end face of the detection table by means of a fastener.
As another embodiment of the application, the upper end of the limit rod is provided with a sealing cover, the fastening piece is located between the sealing cover and the fixing section, the fastening piece comprises an abutting plate and a second spring, the second spring is located between the sealing cover and the abutting plate, and the second spring drives the abutting plate to abut against the fixing section of the fixing sheet.
As another embodiment of the application, a plurality of auxiliary probe assemblies are distributed in the circumferential direction of the sample placing area.
The miniature probe station for testing the high-purity germanium single crystal Hall provided by the invention has the beneficial effects that: compared with the prior art, the miniature probe platform for testing the high-purity germanium monocrystal Hall is characterized in that a circuit board is arranged in the detection platform, a probe assembly is arranged on the detection platform, and the probe assembly is connected with the circuit board; in the Hall test process, ohmic contact is formed between the circuit board and the sample wafer to be tested by means of the probe, ohmic contact failure caused by cold joint, broken joint and the like generated by lead welding is effectively avoided, the stability of connection and the accuracy of Hall test are improved, and the test requirement of the high-purity germanium monocrystal impurity concentration for the detector is met.
The method for testing the high-purity germanium single crystal Hall also provides a method for testing the high-purity germanium single crystal Hall by adopting the miniature probe station for testing the high-purity germanium single crystal Hall, and comprises the following steps:
s1, manufacturing a sample wafer
Cutting the high-purity germanium monocrystal into rectangular sample pieces; cleaning impurities on the sample wafer by methanol or deionized water, and then introducing nitrogen to dry the sample wafer; carrying out chemical polishing corrosion on the sample wafer, cleaning the sample wafer by deionized water after corrosion, and introducing nitrogen for drying;
s2, welding test point
Welding indium-tin alloy points at four vertexes of a rectangular sample wafer to serve as test points;
s3, fixing sample wafer
The adjusting probe moves upwards longitudinally, and the lower end of the probe is separated from the upper end face of the detection table; placing a rectangular sample in a sample placing area, wherein four test points of the rectangular sample face upwards; adjusting the fixing piece until the probe moves to the upper part of the test point; finally, the probe is adjusted to move downwards along the longitudinal direction until the lower end of the probe is in full contact with the test point;
s4, hall test
The detection table is electrically connected to the Hall tester and performs Hall test.
In step S2, after the test points are welded, the sample wafer is placed in a vacuum tube furnace for annealing at 300-500 ℃ for 1-3 min; argon is introduced into the vacuum tube furnace in the annealing process.
The high-purity germanium monocrystal Hall test method provided by the invention has the beneficial effects that: compared with the prior art, the high-purity germanium single crystal Hall test method provided by the invention adopts the miniature probe station and has all the beneficial effects of the miniature probe station; in the Hall test process, ohmic contact is formed between the circuit board and the sample wafer to be tested by means of the probe, ohmic contact failure caused by cold joint, broken joint and the like generated by lead welding is effectively avoided, the stability of connection and the accuracy of Hall test are improved, and the test requirement of the high-purity germanium monocrystal impurity concentration for the detector is met.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are needed in the embodiments or the description of the prior art will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and that other drawings can be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a top view of a high purity germanium single crystal Hall test micro probe station provided by an embodiment of the present invention;
FIG. 2 is a side view of a micro probe station for testing a high purity germanium single crystal Hall provided by an embodiment of the present invention;
FIG. 3 is a schematic diagram of a probe assembly according to an embodiment of the present invention;
FIG. 4 is a schematic diagram of distribution of sample test points according to an embodiment of the present invention;
FIG. 5 is a schematic diagram of a Hall test result in the prior art;
FIG. 6 is a schematic diagram of a Hall test result according to the first embodiment of the present invention;
fig. 7 is a schematic diagram of a hall test result according to the second embodiment of the present invention.
In the figure: 1. a detection table; 2. a sample placement area; 3. a fixing piece; 3a, fixing section; 3b, an inclined section; 3c, an extension section; 4. a limit rod; 5. a first connection hole; 6. a probe; 6a, connecting sleeve; 6b, a needle body; 7. a first spring; 8. an abutting plate; 9. a side arm; 10. a bottom plate; 11. a second spring; 12. and (5) clamping plates.
Detailed Description
In order to make the technical problems, technical schemes and beneficial effects to be solved more clear, the invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
Referring to fig. 1 to 7, a micro probe station and a testing method for testing a high-purity germanium single crystal hall according to the present invention will now be described. The miniature probe station for testing the high-purity germanium single crystal Hall comprises a detection station 1 and four probe assemblies; a rectangular sample placing area 2 is arranged on the upper end surface of the detection table 1; the detection table 1 is internally provided with a circuit board which is electrically connected with the Hall tester; four probe assemblies are uniformly distributed around the sample wafer placing area 2, each probe assembly comprises a fixing sheet 3, a limiting rod 4 and a probe 6, and the limiting rod 4 is arranged on the detection table 1 and connected with the circuit board; the fixing piece 3 is positioned at the upper end of the detection table 1 and is rotationally connected with the limit rod 4; the probe 6 is connected to the other end of the fixing piece 3, and the probe 6 is longitudinally adjustable.
Compared with the prior art, the miniature probe station for testing the high-purity germanium single crystal Hall provided by the invention is different from the conventional method that a sample wafer is welded on a test circuit board through a lead, the test station 1 is arranged, the circuit board is arranged in the test station 1, a limiting rod 4 is arranged on the test station 1, the limiting rod 4 fixes a fixing sheet 3 on the test station 1, and a probe 6 at the other end of the fixing sheet 3 extends to a sample wafer placing area 2.
During detection, the probe 6 is firstly moved upwards along the longitudinal direction, so that the lower end of the probe 6 is separated from the upper end surface of the detection table 1; then the fixing piece 3 is driven to rotate along the limiting rod 4, so that the probe 6 at the end part of the fixing piece 3 moves out of the position right above the sample placing area 2; placing a sample to be tested in the sample placing area 2; then rotating the fixing piece 3 until the probe 6 at the end part of the fixing piece 3 moves to the position above the test point at the edge of the sample wafer; finally, the probe 6 is moved longitudinally downwards until the lower end of the probe 6 abuts against the test point at the edge of the sample.
The invention provides a miniature probe station for testing high-purity germanium monocrystal Hall, which is characterized in that a circuit board is arranged in a detection station 1, a probe assembly is arranged on the detection station 1, and the probe assembly is connected with the circuit board; in the Hall test process, ohmic contact is formed between the circuit board and the sample wafer to be tested by means of the probe 6, ohmic contact failure caused by cold joint, broken joint and the like generated by lead welding is effectively avoided, the stability of connection and the accuracy of Hall test are improved, and the test requirement of the high-purity germanium monocrystal impurity concentration for the detector is met.
Optionally, the fixing piece 3 is a horizontal sheet metal, one end of the fixing piece 3 is connected to the limiting rod 4, and the other end of the fixing piece 3 is connected to the probe 6. One end of the fixing piece 3 connected with the probe 6 is provided with a second connecting hole, and the inner side wall of the second connecting hole is in sliding connection with the outer side wall of the probe 6. When the probe 6 needs to move up and down, the probe 6 is manually pulled up or pressed down, the outer side of the probe 6 is provided with a plurality of damping strips, the length direction of the damping strips is consistent with that of the probe 6, and when the probe 6 is in a non-stressed state, the damping strips are propped against the inner side of the second connecting hole so as to ensure that the probe 6 does not fall down. In order to improve the friction force between the damping strip and the inner wall of the second connecting hole, the damping strip can be made of rubber materials.
Optionally, a plurality of limiting holes are formed in the detection table 1, the limiting holes are formed in the upper end of the detection table 1, and the limiting rod 4 can be fixed in the corresponding limiting holes according to detection requirements during detection. The limiting rod 4 is a screw rod, and the limiting rod 4 is in threaded connection with the limiting hole. The lower part of the limiting rod 4 is connected with a circuit board.
In some possible embodiments, referring to fig. 1 to 3, the fixing piece 3 includes a fixing section 3a, an inclined section 3b and an extending section 3c, wherein the fixing section 3a is horizontally attached to the upper end of the detection table 1 and is connected with the limit rod 4; the inclined section 3b is connected with the fixed section 3a and the extension section 3c, the extension section 3c is horizontally arranged, and the lower end surface of the extension section 3c is higher than the upper end surface of the fixed section 3a; the probe 6 is connected to the extension 3c in a lifting manner.
The fixing piece 3 is a Z-shaped metal piece, and the fixing piece 3 comprises a fixing section 3a, an inclined section 3b and an extending section 3c which are sequentially connected, wherein the fixing section 3a and the extending section 3c are in a horizontal state, and the extending section 3c is higher than the fixing section 3a; the inclined section 3b connects the fixed section 3a and the extended section 3c. The fixed section 3a is provided with a first connecting hole 5, and the first connecting hole 5 is connected with the limiting rod 4. The extension section 3c is provided with a second connecting hole, and the second connecting hole is connected with the probe 6.
Optionally, the extension section 3c is provided with a longitudinal threaded hole, and the outer side wall of the probe 6 is provided with external threads matched with the threaded hole.
The middle part of the extension section 3c is provided with a longitudinal threaded hole, namely, the second connecting hole is a threaded hole. The screw holes penetrate through the upper end face and the lower end face of the extension section 3c. The probe 6 penetrates through the threaded hole, and external threads are arranged on the outer side wall of the probe 6. The external thread of the probe 6 engages with the threaded hole.
When it is necessary to raise and lower the probe 6, it is only necessary to rotate the probe 6 in the forward or reverse direction. In order to facilitate the rotation of the probe 6, a nut is arranged at the top of the probe 6, and a sub or cross opening is arranged on the nut.
In some possible embodiments, referring to fig. 3, a limiting sleeve is connected to the lower end of the extension section 3c, the limiting sleeve includes a side arm 9 connected to the extension section 3c and a bottom plate 10 disposed at the lower end of the side arm 9, and a through hole is formed in the bottom plate 10; the probe 6 penetrates through the extension section 3c and the penetrating hole in sequence, the clamping plate 12 is connected to the middle of the probe 6, the clamping plate 12 is slidably connected with the side arm 9, the first spring 7 is arranged between the clamping plate 12 and the extension section 3c, and the clamping plate 12 abuts against the bottom plate 10 through the first spring 7.
Specifically, a stop collar is arranged at the lower end of the extension section 3c of the fixing piece 3, and the stop collar comprises a side arm 9 connected with the lower end face of the extension section 3c and a bottom plate 10 connected with the lower end of the side arm 9. The side arms 9 are perpendicular to the lower end face of the extension section 3c, and the number of the side arms 9 is several. When the side arms 9 are multiple, the side arms 9 are arranged at intervals and uniformly distributed in the circumference of the second connecting hole. The side arm 9 is inserted or integrally arranged with the bottom plate 10, and the side arm 9 is connected or inserted with the fixing piece 3 in a threaded manner.
The bottom plate 10 of the limit sleeve is rectangular or circular. The bottom plate 10 of the limiting sleeve is provided with a through hole, and the through hole and the second connecting hole are coaxially arranged. The probe 6 penetrates the second connection hole and the penetration hole in sequence and penetrates downward from the bottom plate 10.
The middle part at the probe 6 is connected with the cardboard 12 that extends to the outside, and the edge and the side arm 9 sliding connection of cardboard 12, the up end of cardboard 12 are connected with first spring 7, and the lower terminal surface of cardboard 12 butt is in the upper end of bottom plate 10 under the effect of first spring 7.
The first spring 7 is sleeved outside the probe 6. The first spring 7 is always in a compressed state.
When the probe 6 needs to be moved upwards, the upper end of the probe 6 is manually lifted, the probe 6 moves upwards and the clamping plate 12 presses the first spring 7; when the probe 6 needs to be put down, the external force is removed, and the probe 6 moves downwards under the action of the first spring 7 and presses the test point on the sample. Under the action of the first spring 7, the probe 6 is always pressed on the sample wafer, so that the problem of poor contact is avoided.
And the apertures of the second connecting holes and the through holes are consistent with the outer diameter of the probe 6, and the outer side wall of the probe 6 is attached to the side walls of the second connecting holes and the through holes to slide.
The probe 6 comprises a connecting sleeve 6a and a needle body 6b, and the connecting sleeve 6a and the needle body 6b are connected through insertion or threads. The connecting sleeve 6a is positioned above the needle body 6b, and the connecting sleeve 6a penetrates through the second connecting hole and the penetrating hole. The clamping plate 12 is fixedly connected to the connecting sleeve 6 a. When the needle 6b is damaged, the needle 6b can be directly replaced without replacing the entire probe assembly. After the detection is completed, the needle body 6b can be independently taken down and stored, and the needle body 6b is protected.
In some possible embodiments, referring to fig. 1, the fixing section 3a is provided with a long hole, and the limiting rod 4 penetrates the long hole and abuts the fixing section 3a against the upper end face of the detecting table 1 by means of a fastener.
The fixed section 3a is provided with a strip hole, and the length direction of the strip hole is consistent with the length direction of the fixed section 3a. The limit rod 4 penetrates through the strip hole and extends out of the outer side of the strip hole. The upper portion of the limiting rod 4 is connected with a fastener, and the fastener abuts against the fixing section 3a and fixes the fixing piece 3 at the upper end of the detection table 1.
Specifically, the upper end of the stop lever 4 is provided with a cover, the fastener is located between the cover and the fixed section 3a, the fastener comprises an abutting plate 8 and a second spring 11, the second spring 11 is located between the cover and the abutting plate 8, and the second spring 11 drives the abutting plate 8 to abut against the fixed section 3a of the fixing piece 3.
The upper end of the limiting rod 4 is provided with a sealing cover, the upper end of the fastening piece is connected to the sealing cover, and the lower end of the fastening piece is pressed on the fixing piece 3 to limit the movement of the fixing piece 3. The fastener is abutting plate 8 and second spring 11, and the both ends of second spring 11 are respectively on closing cap and abutting plate 8.
The second spring 11 is always in a compressed state.
When the extending length of the probe 6 or the direction of the probe 6 needs to be adjusted, the abutting plate 8 needs to be manually lifted up, at the moment, the fixing piece 3 is not limited by pressure any more, and then the fixing piece 3 is manually adjusted, so that the fixing piece 3 drives the probe 6 to move to the upper part of the test point; when the probe 6 moves to the position right above the test point, the external force on the abutting plate 8 is removed, and meanwhile, the second spring 11 drives the abutting plate 8 to move downwards to press the fixing piece 3 on the test table 1.
The strip holes are formed in the fixing piece 3, so that the probe 6 can be adjusted in the horizontal direction and in the angle, the position of the probe 6 can be adjusted on the basis of not dismantling the limiting rod 4, the detection of sample wafers with different sizes can be realized, and the detection convenience is improved.
Optionally, a plurality of auxiliary probe assemblies are distributed in the circumferential direction of the sample wafer placement area 2. The auxiliary probe assembly has the same structure as the probe assembly.
The application also provides a high-purity germanium single crystal Hall test method, which adopts the miniature probe station for testing the high-purity germanium single crystal Hall, and comprises the following steps:
s1, manufacturing a sample wafer
Cutting the high-purity germanium monocrystal into rectangular sample pieces; cleaning impurities on the sample wafer by methanol or deionized water, and then introducing nitrogen to dry the sample wafer; carrying out chemical polishing corrosion on the sample wafer, cleaning the sample wafer by deionized water after corrosion, and introducing nitrogen for drying;
s2, welding test point
Welding indium-tin alloy points at four vertexes of a rectangular sample wafer to serve as test points;
s3, fixing sample wafer
The adjusting probe 6 moves upwards along the longitudinal direction, and the lower end of the probe 6 is separated from the upper end surface of the detection table 1; placing a rectangular sample in a sample placing area 2, wherein four test points of the rectangular sample are upward; adjusting the fixing plate 3 until the probe 6 moves above the test point; finally, the probe 6 is adjusted to move downwards along the longitudinal direction until the lower end of the probe 6 is in full contact with the test point;
s4, hall test
The test bench 1 is electrically connected to a hall tester and performs hall test.
As shown in fig. 4, four corners of the square sample are a, b, c, d four test points, which are in one-to-one correspondence with the four probes 6.
The calculation formula for measuring the electroactive impurity concentration of the high-purity germanium single crystal by utilizing the low-temperature Hall effect is as follows:
wherein:
ρ—resistivity;
e-electron charge, 1.6X10 -19 C；
μ—drift mobility, related to carrier type (n or p):
the measurement of resistivity ρ is divided into two steps:
1) Current I AB From the point of contact A in FIG. 4, point of contact B comes in and point of contact B comes out, while contact C is measured and recordedVoltage difference V between point and D contact point CD And polarity. Resistor R AB,CD The calculation formula of (2) is as follows:
2) Current I BC From the point of contact B in FIG. 4, point of contact C flows out, and the voltage difference V between point of contact A and point of contact D is measured and recorded AD And polarity. Resistor R BC,AD The calculation formula of (2) is as follows:
the calculation formula of the resistivity ρ is as follows:
wherein:
d-sample thickness, cm;
f-influencing factor.
According to the high-purity germanium monocrystal Hall test method provided by the invention, firstly, a sample wafer is manufactured, and a high-purity germanium monocrystal is cut into square sample wafers; washing the cut sample wafer with methanol or deionized water, washing residual contact metal or other impurities on the sample wafer, and then introducing nitrogen into the cleaned sample wafer for drying; next, HNO is configured 3 : and carrying out chemical polishing corrosion on the HF=3:1 corrosion solution, wherein the corrosion time is 1min-2min. After corrosion is finished, deionized water is required to be used for cleaning the sample, and then nitrogen is introduced for drying.
And (3) performing test point welding on the processed sample at room temperature, and welding indium-tin alloy at four vertexes of the square sample to form a test point. At this time, the sample wafer to be measured is completely prepared.
The coupon is fixed to the microprobe station. Firstly, the probe 6 is moved upwards until the lower end of the probe 6 is separated from the upper end face of the detection table 1; the fixing plate 3 is then moved so that the probes 6 are removed from the sample placement area 2. The prepared sample is then placed in sample placement area 2 with the test point of the sample facing upwards. And then the fixing piece 3 is adjusted, so that the probe 6 at the end part of the fixing piece 3 moves to be right above the test point of the sample, and finally the probe 6 is put down until the lower end of the probe 6 abuts against the test point. And after the four probes 6 are connected with the test points, starting the Hall tester.
Compared with the prior art, the high-purity germanium single crystal Hall test method provided by the invention has the beneficial effects that the miniature probe station is adopted; in the Hall test process, ohmic contact is formed between the circuit board and the sample wafer to be tested by means of the probe 6, ohmic contact failure caused by cold joint, broken joint and the like generated by lead welding is effectively avoided, the stability of connection and the accuracy of Hall test are improved, and the test requirement of the high-purity germanium monocrystal impurity concentration for the detector is met.
In some possible embodiments, in step S2, after welding the test points, the sample is placed in a vacuum tube furnace for annealing at 300-500 ℃ for 1-3 min; argon is introduced into the vacuum tube furnace in the annealing process. Ohmic contact can be improved and contact resistance can be reduced through an annealing process.
Embodiment one: cutting high-purity germanium monocrystal into slices of 1cm x 1 cm; cleaning the sample with methanol or deionized water, removing residual contact metal or other impurities, and drying the sample with nitrogen; configuring HNO 3 : carrying out chemical polishing corrosion on the corrosive liquid with HF=3:1, washing with deionized water after 1-2 min, and drying with nitrogen; at room temperature, welding indium-tin alloy at four vertexes of the sample wafer; adjusting the probe 6 to lift the probe 6, and adjusting the fixing piece 3 to remove the probe 6 from the sample wafer placing area 2; placing the sample on a miniature probe platform, then adjusting the fixing piece 3 to enable four test points of the sample to be placed under the probe 6, and adjusting the probe 6 to slowly descend the probe 6 until the probe 6 is completely contacted with the indium-tin alloy welding spot; and connecting a Hall tester to perform Hall test. The test results are shown in fig. 5.
Embodiment two: cutting high-purity germanium monocrystal into slices of 1cm x 1 cm; washing the sample with methanol or deionized water to remove residual contact metals or other impuritiesDrying the sample with nitrogen; configuring HNO 3 : carrying out chemical polishing corrosion on the corrosive liquid with HF=3:1, washing with deionized water after 1-2 min, and drying with nitrogen; at room temperature, welding indium-tin alloy at four vertexes of a sample wafer, placing the sample in a vacuum tube furnace for annealing after welding, wherein the annealing temperature is 300-500 ℃, the annealing time is 1-3 min, and introducing argon for protection in the whole annealing process; adjusting the probe 6 to lift the probe 6, and adjusting the fixing piece 3 to remove the probe 6 from the sample wafer placing area 2; placing the sample on a miniature probe platform, then adjusting the fixing piece 3 to enable four test points of the sample to be placed under the probe 6, and adjusting the probe 6 to slowly descend the probe 6 until the probe 6 is completely contacted with the indium-tin alloy welding spot; and connecting a Hall tester to perform Hall test. The test results are shown in fig. 6.
The foregoing description of the preferred embodiments of the invention is not intended to be limiting, but rather is intended to cover all modifications, equivalents, and alternatives falling within the spirit and principles of the invention.
Claims (10)
1. High-purity germanium single crystal hall is miniature probe platform for test, its characterized in that includes:
the detecting platform is characterized in that a rectangular sample placing area (2) is arranged on the upper end face of the detecting platform (1); the detection table (1) is internally provided with a circuit board, and the circuit board is electrically connected with the Hall tester;
the four probe assemblies are uniformly distributed around the sample wafer placing area (2), each probe assembly comprises a fixing sheet (3), a limiting rod (4) and a probe (6), and each limiting rod (4) is installed on the corresponding detection table (1) and connected with the corresponding circuit board; the fixing piece (3) is positioned at the upper end of the detection table (1) and is rotationally connected with the limit rod (4); the probe (6) is connected to the other end of the fixing piece (3), and the probe (6) can be longitudinally adjusted.
2. The miniature probe station for testing the high-purity germanium single crystal Hall according to claim 1, wherein the fixing piece (3) comprises a fixing section (3 a), an inclined section (3 b) and an extending section (3 c), and the fixing section (3 a) is horizontally attached to the upper end of the detection station (1) and is connected with the limiting rod (4); the inclined section (3 b) is connected with the fixed section (3 a) and the extension section (3 c), the extension section (3 c) is horizontally arranged, and the lower end face of the extension section (3 c) is higher than the upper end face of the fixed section (3 a); the probe (6) is connected to the extension section (3 c) in a lifting manner.
3. The miniature probe station for testing the high-purity germanium single crystal Hall according to claim 2, wherein the extension section (3 c) is provided with a longitudinal threaded hole, and the outer side wall of the probe (6) is provided with external threads matched with the threaded hole.
4. The miniature probe station for testing the high-purity germanium single crystal Hall of claim 2, wherein the lower end of the extension section (3 c) is connected with a limit sleeve, the limit sleeve comprises a side arm (9) connected with the extension section (3 c) and a bottom plate (10) arranged at the lower end of the side arm (9), and a through hole is formed in the bottom plate (10); the probe (6) penetrates through the extension section (3 c) and the penetrating hole in sequence, a clamping plate (12) is connected to the middle of the probe (6), the clamping plate (12) is connected with the side arm (9) in a sliding mode, a first spring (7) is arranged between the clamping plate (12) and the extension section (3 c), and the clamping plate (12) abuts against the bottom plate (10) through the first spring (7).
5. The miniature probe station for testing the high-purity germanium single crystal Hall according to claim 1, wherein the probe (6) comprises a connecting sleeve (6 a) and a needle body (6 b), the connecting sleeve (6 a) is connected with the fixing piece (3), and the needle body (6 b) is inserted into the lower end of the connecting sleeve (6 a).
6. The miniature probe station for testing the high-purity germanium single crystal Hall according to claim 2, wherein the fixing section (3 a) is provided with a strip hole, and the limiting rod (4) penetrates through the strip hole and abuts the fixing section (3 a) on the upper end face of the detection station (1) by means of a fastener.
7. The miniature probe station for high purity germanium single crystal hall test according to claim 6, wherein the upper end of the limit lever (4) is provided with a cover, the fastener is located between the cover and the fixed section (3 a), the fastener comprises an abutting plate (8) and a second spring (11), the second spring (11) is located between the cover and the abutting plate (8), and the second spring (11) drives the abutting plate (8) to abut against the fixed section (3 a) of the fixing piece (3).
8. The miniature probe station for high purity germanium single crystal hall test according to claim 1, wherein a plurality of auxiliary probe assemblies are distributed in the circumferential direction of the sample placing area (2).
9. The method for testing the high-purity germanium single crystal Hall is characterized by adopting the miniature probe station for testing the high-purity germanium single crystal Hall as claimed in claim 1, and comprises the following steps:
s1, manufacturing a sample wafer
Cutting the high-purity germanium monocrystal into rectangular sample pieces; cleaning impurities on the sample wafer by methanol or deionized water, and then introducing nitrogen to dry the sample wafer; carrying out chemical polishing corrosion on the sample wafer, cleaning the sample wafer by deionized water after corrosion, and introducing nitrogen for drying;
s2, welding test point
Welding indium-tin alloy points at four vertexes of a rectangular sample wafer to serve as test points;
s3, fixing sample wafer
The adjusting probe (6) moves upwards along the longitudinal direction, and the lower end of the probe (6) is separated from the upper end surface of the detection table (1); placing a rectangular sample in a sample placing area (2), wherein four test points of the rectangular sample are upward; adjusting the fixing piece (3) until the probe (6) moves to the upper part of the test point; finally, the probe (6) is adjusted to move downwards along the longitudinal direction until the lower end of the probe (6) is in full contact with the test point;
s4, hall test
The detection table (1) is electrically connected to the Hall tester and Hall test is performed.
10. The method for testing the high-purity germanium single crystal Hall according to claim 9, wherein in the step S2, after the test points are welded, the sample wafer is placed in a vacuum tube furnace for annealing at 300-500 ℃ for 1-3 min; argon is introduced into the vacuum tube furnace in the annealing process.
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Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106569116A (en) * | 2016-10-10 | 2017-04-19 | 河南大学 | Probe station and low-temperature testing system |
| CN106950484A (en) * | 2017-03-14 | 2017-07-14 | 华中科技大学 | It is a kind of while measuring the device and method of Hall coefficient and Seebeck coefficient |
| CN210230705U (en) * | 2019-06-27 | 2020-04-03 | 张家港恩达通讯科技有限公司 | Chip-level Hall device testing and sorting device |
| CN111721340A (en) * | 2020-05-19 | 2020-09-29 | 江苏尚诚纺织科技有限公司 | Safety protection type probe detection tool |
| CN214794926U (en) * | 2021-05-27 | 2021-11-19 | 上海柯舜科技有限公司 | Probe clamp for electrical measurement |
| CN215866829U (en) * | 2021-07-08 | 2022-02-18 | 深圳市新富城电子有限公司 | Probe for PCB circuit test |
| CN217425653U (en) * | 2022-03-18 | 2022-09-13 | 锦正茂实验仪器(河北)有限公司 | Hall effect measures with sample platform of taking probe |
| CN115825682A (en) * | 2022-12-12 | 2023-03-21 | 安徽光智科技有限公司 | Method for detecting deep energy level defect of detector-grade high-purity germanium single crystal |
-
2023
- 2023-04-03 CN CN202310339974.1A patent/CN116087571A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106569116A (en) * | 2016-10-10 | 2017-04-19 | 河南大学 | Probe station and low-temperature testing system |
| CN106950484A (en) * | 2017-03-14 | 2017-07-14 | 华中科技大学 | It is a kind of while measuring the device and method of Hall coefficient and Seebeck coefficient |
| CN210230705U (en) * | 2019-06-27 | 2020-04-03 | 张家港恩达通讯科技有限公司 | Chip-level Hall device testing and sorting device |
| CN111721340A (en) * | 2020-05-19 | 2020-09-29 | 江苏尚诚纺织科技有限公司 | Safety protection type probe detection tool |
| CN214794926U (en) * | 2021-05-27 | 2021-11-19 | 上海柯舜科技有限公司 | Probe clamp for electrical measurement |
| CN215866829U (en) * | 2021-07-08 | 2022-02-18 | 深圳市新富城电子有限公司 | Probe for PCB circuit test |
| CN217425653U (en) * | 2022-03-18 | 2022-09-13 | 锦正茂实验仪器(河北)有限公司 | Hall effect measures with sample platform of taking probe |
| CN115825682A (en) * | 2022-12-12 | 2023-03-21 | 安徽光智科技有限公司 | Method for detecting deep energy level defect of detector-grade high-purity germanium single crystal |
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